TW201824441A - 基板處理方法及基板處理系統 - Google Patents
基板處理方法及基板處理系統 Download PDFInfo
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Abstract
本發明之目的為:使各個類別之基板的處理及搬運達到最佳化。本發明提供一種基板處理方法,將收納有基板之基板收納容器載置到載入口,對收納在所載置的該基板收納容器之基板的類別進行自動判別,並且參照儲存有「和各個類別的基板之搬運條件逐一相關的參數資料」之儲存部,而依據和自動判別得到的該基板之類別相對應的參數資料,對該基板收納容器所收納之基板的搬運進行控制,而進行基板處理。
Description
本發明有關於基板處理方法及基板處理系統。
產品用晶圓具有依SEMI規格(由國際半導體設備與材料產業協會(SEMI,Semiconductor Equipment and Materials International)所制定的半導體製造裝置之基準)而定的尺寸、厚度及重量。相對於此,溫度測定用晶圓之厚度及重量和產品用晶圓之厚度及重量不同。因為存在此差異,故用以在進行映射(Mapping)時檢測異常之判定值、搬運速度之上限值、處理溫度之上限值、以及射頻功率(RF Power)之上限值等均不同。
因此,專利文獻1記載一種技術,在處理溫度測定用晶圓之特定步驟中,對目標環境的條件進行測定,並加以記錄,再自動回到基板處理系統。 [先前技術文獻] [專利文獻]
[專利文獻1]日本特開2011-151399號公報
[發明所欲解決之課題] 然而,專利文獻1之發明在將存放有例如溫度測定用晶圓的基板收納容器(以下稱FOUP(Front Opening Unified Pod,前開式晶圓盒))載置到載入口時,無法自動判別出收納有溫度測定用晶圓,而無法變更搬運條件或映射設定條件。因此,專利文獻1之發明難以按照FOUP所收納的晶圓之類別,使得各個類別的基板之處理及搬運達到最佳化。
對於上述課題,就一個面向而言,本發明之目的為:按照基板之類別,使得各個類別的基板之處理及搬運達到最佳化。 [解決課題之手段]
為解決上述課題,依本發明之一態樣提供一種基板處理方法,將收納有基板之基板收納容器載置到載入口,對收納在所載置之該基板收納容器的基板之類別進行自動判別,並且參照儲存有「和各個類別的基板之搬運條件逐一相關的參數資料」之儲存部,依據和自動判別得到的該基板之類別相對應的參數資料,對該基板收納容器所收納的基板之搬運進行控制,而進行基板處理。 [發明之效果]
依本發明之一個面向,可使得各個類別之基板的處理及搬運達到最佳化。
[實施發明之最佳態樣] 以下,參照圖式,說明用以實施本發明之態樣。又,在本說明書及圖式中,對於實質上相同之構成,藉由標註同一符號以省略重複的說明。
[電漿處理系統之整體構成] 首先,一面參照圖1,一面針對依本發明之一實施態樣的電漿處理系統之整體構成一例進行說明。圖1顯示依本發明之一實施態樣的電漿處理系統之整體構成一例。電漿處理系統係基板處理系統之一例,為具有處理單元PU和搬運單元TU的叢集工具。
處理單元PU係對半導體晶圓(以下稱晶圓W)等之基板進行成膜處理、蝕刻處理等預定之處理的單元。處理單元PU具有處理模組PM1~PM6(以下亦總稱為處理模組PM)、傳送模組TM、及負載鎖定模組LL1、LL2。又,處理模組PM及負載鎖定模組LL之數目不限於上述數目。
處理模組PM1~PM6連接於傳送模組TM之周圍,對晶圓W進行成膜處理、蝕刻處理等預定之處理。又,處理模組PM1~PM6可進行種類相同的處理,亦可進行種類不同的處理。
在處理模組PM1~PM6之內部,分別設置用以載置晶圓W之載置台3。又,在處理模組PM1~PM6,設有例如導入吹淨氣體之氣體導入系統、導入處理氣體之氣體導入系統、以及可進行抽真空之排氣系統。
在處理模組PM1~PM6中,依據預先儲存於儲存部且顯示處理及搬運程序之配方15,對晶圓W進行預定之處理和搬運。該儲存部以控制部10之記憶體12表示。
傳送模組TM形成彼此對向之一對邊相較於其他邊較長的六角形狀。在傳送模組TM的前端側之較短的兩個邊,分別藉由閘閥G3、G4連接有處理模組PM3、PM4。在傳送模組TM的基端側之較短的兩個邊,分別藉由閘閥G7、G8連接有負載鎖定模組LL1、LL2。在傳送模組TM的一個長邊,分別藉由閘閥G1、G2連接有處理模組PM1、PM2。在傳送模組TM之另一個長邊,分別藉由閘閥G5、G6連接有處理模組PM5、PM6。
傳送模組TM具有在處理模組PM1~PM6彼此之間、以及處理模組PM1~PM6與負載鎖定模組LL1、LL2之間搬運(搬出及搬入)晶圓W的功能。在傳送模組TM,設有例如導入吹淨氣體之氣體導入系統、以及可進行抽真空的排氣系統。
在傳送模組TM之內部,設有處理單元側搬運裝置TR1,用以在處理模組PM1~PM6、以及負載鎖定模組LL1、LL2各模組之間搬運晶圓W。
負載鎖定模組LL1、LL2分別藉由閘閥G9、G10連接於搬運模組LM。負載鎖定模組LL1、LL2具有將從搬運模組LM搬運而來之晶圓W暫時固持,而在進行壓力調整之後再搬運到傳送模組TM的功能。又,負載鎖定模組LL1、LL2還具有將從傳送模組TM搬運而來之晶圓W暫時固持,而在進行壓力調整之後再搬運到搬運模組LM的功能。
在負載鎖定模組LL1、LL2之內部,分別設有可載置晶圓W之傳遞台。又,在負載鎖定模組LL1、LL2設有可進行殘留物等粒子之吹淨和排出的排氣系統。
在此種處理單元PU中,處理模組PM1~PM6與傳送模組TM之間、和傳送模組TM與負載鎖定模組LL1、LL2之間可分別氣密性地進行開閉。又,搬運模組LM與負載鎖定模組LL1、LL2之間亦可分別氣密性地進行開閉。
搬運單元TU係在FOUP與處理單元PU之間搬運晶圓W的單元,具有搬運模組LM。
搬運模組LM形成矩形。在搬運模組LM之一個長邊,並列設置有複數之載入口LP1~LP3。載入口LP1~LP3可分別載置FOUP。又,圖1顯示在所有之載入口LP1~LP3均設置FOUP的情形。FOUP係可將例如25片晶圓W載置於以等間隔設置的多段插槽而進行收納的容器。收納在FOUP的晶圓W之類別有產品用晶圓、以及溫度、壓力等測定用的測定用晶圓。
產品用晶圓之尺寸、厚度及重量依SEMI規格而定。相對於此,測定用晶圓之厚度及重量並非依SEMI規格而定,有時相較於產品用晶圓較厚,或者較重。就測定用晶圓而言,可舉例如搭載溫度感測器之溫度測定用晶圓、搭載壓力感測器之壓力測定用晶圓、以及搭載離子密度檢測感測器之離子密度檢測用晶圓等。又,測定用晶圓為特殊基板之一例。另一方面,產品用晶圓包含使用於清洗處理或風乾處理等之擋片晶圓。包含擋片晶圓之產品用晶圓為產品基板之一例。
另外,各載入口LP有時會設置載具ID讀取器,用以讀取FOUP上所設有之載具ID。
FOUP形成內部充填有例如N2
氣體之密閉構造。FOUP藉由開閉門D1~D3和搬運模組LM連接。又,載入口LP之數目不限於上述數目。
在搬運模組LM之一個短邊設有對準器AU。在對準器AU之內部,設有載置晶圓W的旋轉載置台、和對晶圓W之周緣部進行光學檢測的光學感測器。對準器AU檢測例如晶圓W之定向平面、刻痕等,而進行晶圓W之位置調整。
搬運模組LM之內部設有搬運單元側搬運裝置TR2,用以在負載鎖定模組LL1、LL2、FOUP、對準器AU各模組之間搬運晶圓W。搬運單元側搬運裝置TR2具備以可利用旋轉機構旋轉之方式安裝於基台231的搬運臂,且可藉由滑動機構沿著搬運模組LM之長邊方向滑動。搬運單元側搬運裝置TR2之搬運臂為具有例如一對多關節臂的雙臂機構。搬運臂包含上下並列設置且可伸縮的多關節臂,亦即第1臂211和第2臂221。
搬運單元側搬運裝置TR2之滑動機構具有例如線性馬達。具體而言,在搬運模組LM之內部設有沿著長邊方向延伸之引導軌232,且安裝有搬運臂的基台231以可沿著引導軌232滑動之方式設置。在基台231和引導軌232分別設有線性馬達之轉子與定子,且在引導軌232之端部設置用以驅動線性馬達之線性馬達驅動機構233。線性馬達驅動機構233連接有控制部10。藉此,依據來自控制部10之控制信號,線性馬達驅動機構233進行驅動,搬運單元側搬運裝置TR2和基台231一起沿著引導軌232往箭頭方向移動。又,搬運單元側搬運裝置TR2之滑動機構不限於上述,亦可具有其他機構。
搬運單元側搬運裝置TR2之搬運臂亦即第1臂211及第2臂221分別在其前端設有拾取器212、222,可一次固持兩片晶圓W或兩個對焦環。藉此,對例如負載鎖定模組LL1、LL2、FOUP、對準器AU搬運晶圓W時,可以交換晶圓W之方式進行搬運。又,以一次固持一片晶圓W與一個對焦環之方式進行搬運亦可。另外,搬運單元側搬運裝置TR2的搬運臂之數目不限於上述數目,亦可為例如僅具有一支臂部的單臂機構。
又,搬運單元側搬運裝置TR2具有未圖示之轉動用馬達、伸縮用馬達及升降用馬達,分別用以使搬運臂轉動、伸縮及升降。各馬達連接於控制部10,可依據來自控制部10之控制信號,進行搬運單元側搬運裝置TR2的搬運臂之控制。
又,搬運單元側搬運裝置TR2設有映射感測器,用以檢測設置在載入口LP的FOUP內有無晶圓、有無複數片晶圓載置於同一插槽、以及有無晶圓傾斜載置於插槽,藉由搬運單元側搬運裝置TR2之升降用馬達,進行FOUP內之映射。
電漿處理系統由控制部10進行控制。具體而言,控制部10對電漿處理系統之各部,例如處理單元側搬運裝置TR1、搬運單元側搬運裝置TR2、閘閥G1~G10、開閉門D1~D3、以及對準器AU等進行控制。
(控制部) 控制部10具有CPU(Central Processing Unit,中央處理器)11、記憶體12、通信I/F(介面)13和顯示器14。CPU11依據儲存於記憶體12之配方15及參數表16,進行晶圓W的處理及搬運之控制。晶圓W之處理包含:晶圓W之類別的自動判別處理、晶圓W之蝕刻處理或成膜處理等電漿處理、以及後述用以檢測異常的映射。
圖2顯示使用於依一實施態樣之電漿處理的配方之一例。在配方預先設定有步驟1~步驟n(圖2中為步驟1~步驟5)的處理程序中之條件(處理條件)。例如,作為處理條件,可舉例如搬運至處理模組PM的晶圓之溫度、內部之壓力、以及射頻功率(RF POWER)等。
圖3顯示依一實施態樣的參數表16之一例。作為參數表16之一例,圖3顯示設定有溫度測定用之參數資料的參數表16a、和設定有擋片晶圓用之參數資料的參數表16b。又,參數表16a、16b內之參數資料可由操作人員預先設定,或者自動設定。
又,和圖3所示的溫度測定用之參數表16a及擋片晶圓用之參數表16b相同,在記憶體12儲存有用於產品用晶圓的參數表16亦可。又,和溫度測定用之參數表16a相同,儲存有壓力測定用之參數表或離子密度檢測用之參數表亦可。
記憶體12係可由ROM(Read Only Memory,唯讀記憶體)、RAM(Random Access Memory,隨機存取記憶體)、HDD(Hard Disk Drive,硬碟機)等構成的儲存部之一例。又,配方15及參數表16儲存於硬碟或半導體記憶體亦可,並且在收納於CD-ROM、DVD等之電腦可讀取的可移動式儲存媒體之狀態下,設定於儲存區域之預定位置亦可。
顯示器14係顯示由CPU11處理之結果等的顯示部之一例。又,當產品用晶圓被搬運至處理模組PM1~PM6任一模組時,對產品用晶圓施予蝕刻等電漿處理。當擋片晶圓被搬運至處理模組PM1~PM6任一模組時,進行以接受搬運之處理模組PM為對象的清洗處理。當溫度測定用晶圓或壓力測定用晶圓等測定用晶圓被搬運至處理模組PM1~PM6任一模組時,進行以接受搬運之處理模組PM為對象的晶圓溫度或壓力的測定。
通信I/F13係一種介面,用以和作為製造執行系統(MES:Manufacturing Execution System)的電腦主機20進行連接及通信。通信I/F13從電腦主機20接收FOUP之識別資訊、或收納在FOUP的晶圓之類別資訊亦可。
[處理模組之整體構成] 依本實施態樣之處理模組PM可對晶圓W實施原子層蝕刻(ALE:Atomic Layer Etching)處理、反應性離子蝕刻(RIE:Reactive Ion Etching)處理、灰化處理等之電漿處理,但是並無特別限定。
處理模組PM具有由例如鋁等之導電性材料構成的處理容器(腔室)17、以及供給氣體到處理容器17內的氣體供給源18。氣體供給源18供給預定之處理氣體。
處理容器17電性接地連接,在處理容器17內設有下部電極19、以及和下部電極19對向而平行配置的上部電極25。下部電極19亦發揮作為載置晶圓W之載置台的功能。下部電極19和上部電極25的至少其中之一和電力供給裝置30連接,在圖4中,係下部電極19和電力供給裝置30連接。電力供給裝置30具備:第1高頻電源32,供給第1頻率之第1射頻功率(電漿產生用之射頻功率HF);及第2高頻電源34,供給相較於第1頻率低的第2頻率之第2射頻功率(離子引入用之射頻功率LF)。第1高頻電源32藉由第1匹配器33連接於下部電極19。第2高頻電源34藉由第2匹配器35連接於下部電極19。又,第1射頻功率為例如40MHz之頻率亦可,第2射頻功率則為例如13.56MHz之頻率亦可。
第1匹配器33及第2匹配器35分別用以令負載阻抗和第1高頻電源32及第2高頻電源34之內部(或輸出)阻抗互相匹配。在處理容器17內產生電漿時,對於第1高頻電源32、第2高頻電源34各自發揮功能,俾內部阻抗與負載阻抗在表觀上一致。
上部電極25隔著覆蓋其周緣部之遮蔽環40,而安裝在處理容器17之頂棚部。在上部電極25設有擴散室50,使得從氣體供給源18導入之氣體擴散。在擴散室50形成氣體導入口45,藉由此氣體導入口45,可將各種氣體從氣體供給源18導入到擴散室50。在上部電極25形成有複數之氣體通道55,用以將來自擴散室50之氣體供給到處理容器17內。
首先,來自氣體供給源18之氣體係藉由圖4所示之氣體導入口45分配供給到擴散室50。然後,被供給到擴散室50之氣體經由氣體通道55,而從氣體孔28供給到處理容器17內。由上述可知,形成此構成之上部電極25亦發揮作為供給氣體之氣體噴淋頭的功能。
在處理容器17之底面形成排氣口60,藉由和排氣口60連接之排氣裝置65進行處理容器17內的排氣。藉此,可將處理容器17內維持在預定之壓力。在處理容器17之側壁設有閘閥G。閘閥G在從處理容器17搬入搬出晶圓W時,進行搬出搬入口的開閉。
控制部10按照配方15,對各步驟之處理時間、切換時間、壓力(氣體之排氣)、射頻功率或電壓、各種氣體流量、晶圓溫度、處理容器17之內部溫度(例如,上部電極溫度、處理容器之側壁溫度、ESC溫度)等進行控制。
[晶圓處理] 接著,參照圖5,說明依本實施態樣的晶圓處理之一例。圖5係顯示依本實施態樣的晶圓處理之一例的流程圖。當開始進行本處理時,CPU11將FOUP載置到載入口LP(步驟S10)。接著,CPU11檢測FOUP之識別資訊,並依據檢測結果,自動判別FOUP所收納的晶圓W之類別(步驟S12)。
在此,針對CPU11檢測FOUP之識別資訊的一例進行說明。例如,在圖6(a)所示的FOUP之底部,貫通有空孔部B1~B4。於載入口LP中,在載置FOUP之載置面設有按鈕部A1~A4。在此情形,如圖6(a)之右側顯示FOUP之底面(圖6(a)之右上)及側面(右下)般,當FOUP被載置到載入口LP時,按鈕部A1~A4分別貫通於各個空孔部B1~B4,並且突出到FOUP之內部。
又,例如,在圖6(b)所示的FOUP之底部,貫通有空孔部B1、B3。在此情形,如圖6(b)之右側顯示FOUP之底面(圖6(b)之右上)及側面(右下)般,當FOUP被載置到載入口LP時,按鈕部A1、A3分別貫通於各個空孔部B1、B3,並且突出到FOUP之內部。按鈕部A2、A4則分別被FOUP之底部向下按壓。在此,將按鈕部A貫通於空孔部B的狀態設定為關(=0),並且將按鈕部A被FOUP之底部向下按壓的狀態設定為開(=1)。
又,在記憶體12預先設定有和按鈕部A1~A4之開/關組合對應的FOUP之識別資訊。於是,CPU11參照記憶體12,而從按鈕部A1~A4之開/關狀態辨識FOUP之識別資訊。
例如,如圖6(a)所示,在按鈕部A1~A4全部為關的情形,CPU11得到FOUP之識別資訊(A1, A2, A3, A4)為(0, 0, 0, 0)的檢測結果。依據此結果,CPU11可判定FOUP所收納的晶圓W之類別為例如「產品用晶圓」。
又,如圖6(b)所示,在按鈕部A1、A3為關,而按鈕部A2、A4為開的情形,CPU11得到FOUP之識別資訊(A1, A2, A3, A4)為(0, 1, 0, 1)的檢測結果。依據此結果,CPU11可判定FOUP所收納的晶圓W之類別為例如「溫度測定用晶圓」。以上述方式,依據FOUP之識別資訊(A1, A2, A3, A4),可判別晶圓W之類別。
又,CPU11依據FOUP之識別資訊而自動判別晶圓之類別的方法並不限於此,係讀取FOUP之載具ID,並依據載具ID,而自動判別晶圓之類別亦可。又,CPU11依據從電腦主機20所接收的晶圓W之類別資訊,而判別晶圓之類別亦可。又,CPU11依操作人員所指定的晶圓W之類別資訊,而判別晶圓之類別亦可。
回到圖5,CPU11接著判定晶圓W之類別為產品用晶圓抑或測定用晶圓(步驟S14)。CPU11判定晶圓W之類別為產品用晶圓時,便判定晶圓W之類別是否為擋片晶圓(步驟S16)。
CPU11判定晶圓W之類別為擋片晶圓時,便從記憶體12所儲存的參數表16取得擋片晶圓用之參數資料(步驟S18),並且進入步驟S22。另一方面,在步驟S16中,CPU11判定晶圓W之類別並非擋片晶圓時,便從記憶體12所儲存的參數表16取得產品用之參數資料(步驟S20),並且進入步驟S22。
在步驟S14中,CPU11判定晶圓W之類別為測定用晶圓時,便從記憶體12所儲存的參數表16取得測定用之參數資料(步驟S24),並且進入步驟S22。
於步驟S22中,CPU11在自動判別晶圓類別之後,並從載置於載入口LP的FOUP搬出晶圓W之前,按照所取得的參數資料,對FOUP之映射進行控制。在參數表16,可設定晶圓W的搬運條件、處理條件、以及映射等之測定的條件。就映射條件而言,可設定FOUP在映射時的雙層插槽檢測、傾斜插槽檢測等之條件。又,測定用晶圓之厚度及重量由於相較於產品用晶圓較厚且較重,因此就映射條件而言,必須將雙層插槽檢測之寬度等條件變更為對產品用晶圓進行的雙層插槽檢測之寬度條件。
為了進行FOUP之映射,在圖1所示大氣側之第1臂211或第2臂221之拾取器前端,安裝可拍攝FOUP內部的感測器,並且令安裝有感測器的臂部朝FOUP,且在FOUP之高度方向上進行上下移動,而令感測器進行掃描。藉此,檢測在FOUP內的哪個插槽位置有晶圓。以此方式,可檢測在FOUP內之同一插槽容置兩片晶圓(雙層插槽檢測)、晶圓傾斜容置於插槽(傾斜插槽檢測)、或其他異常的狀況。
接著,CPU11判定映射結果是否有異常(步驟S26)。CPU11判定映射結果有異常時,便輸出警報(步驟S28),並結束本處理。
另一方面,CPU11判定映射結果沒有異常時,便將晶圓從FOUP加以搬出,並在預定之處理模組PM施行預定之處理後,再收納到載入口LP的預定之FOUP(步驟S29),並結束本處理。
於步驟S29中,CPU11按照配方,以不偏離所取得參數資料之條件的方式,進行晶圓W之處理及搬運的控制。例如,在晶圓W之類別為擋片晶圓的情形,若配方所設定的條件偏離擋片晶圓用之參數資料所設定的條件,CPU11以不超過參數資料所設定之條件的方式,進行晶圓之處理及搬運的控制。 例如,圖2所示的配方A之步驟1的溫度T1超過圖3的擋片晶圓用之參數表16b所設定的溫度之上限值(Max)Tf時,CPU11以晶圓溫度不超過上限值Tf的方式,進行處理的控制。又,CPU11以擋片晶圓之搬運速度不超過上限值Vf的方式進行控制。
又,自動判別得到的晶圓W之類別為測定用晶圓時,CPU11以配方所設定的處理及搬運條件不偏離於測定用之參數資料所設定的條件之方式,進行處理及搬運的控制。例如,CPU11在所使用的配方之溫度超過圖3之參數表16a所設定的溫度之上限值(Max)Td時,CPU11以晶圓溫度不超過上限值Td的方式進行控制。藉此,可防止溫度測定用晶圓所搭載之溫度感測器發生破損等。
又,CPU11以溫度測定用晶圓之搬運速度不超過上限值Vd的方式進行控制。通常而言,溫度測定用晶圓相較於產品用晶圓較厚且較重。因此,在搬運溫度測定用晶圓時,以不超過溫度測定用之參數表16a所設定的搬運速度之上限值Vd的方式,進行搬運速度的控制。通常,溫度測定用之參數表16a所設定的搬運速度之上限值Vd,設定為相較於搬運一般產品用晶圓時之搬運速度較小的值。以此方式,本實施態樣在自動判定為測定用晶圓等之特殊基板時,能夠自動地將特殊基板以相較於產品基板較慢的搬運速度進行搬運。其結果,可防止特殊基板在搬運時發生破損等。
然而,在搬運產品基板時之搬運速度未超過特殊基板的搬運速度之上限值時,通常的情形下,以搬運產品基板的搬運速度進行特殊基板之搬運。藉此,相較於無論晶圓屬於何種類別,一律放緩搬運速度的情形,可抑制搬運時發生延遲,而縮短搬運的時間。
又,在本實施態樣中,於參數表16設定有在處理模組PM內施加的射頻功率RF之上限值。CPU11將射頻功率RF控制在不超過參數表16所設定的射頻功率RF之上限值。
就參數表16所設定的晶圓W之搬運條件而言,除了搬運速度之外,設定「針對加速度、搬運時間、及晶圓在Z方向上之位置進行微調整時的調整值」亦可。在Z方向上的位置之微調整係一種考慮和晶圓重量對應之撓曲的調整值,用於針對在和搬運方向垂直之Z方向上的位置進行修正。
如以上說明,依本實施態樣之基板處理方法,針對產品用晶圓與測定用晶圓的異常檢測或搬運速度,在參數表16設定兩類晶圓之間不同的條件。因此,可考慮到產品用晶圓與測定用晶圓各自適當的處理條件或搬運條件不同,而依據和自動判別得到之晶圓類別對應的參數資料,將配方所設有的處理條件或搬運條件加以變更。藉此,可使得各種晶圓類別的晶圓之處理及搬運條件最佳化。又,可消除依晶圓類別而手動變更處理條件或搬運條件的麻煩。
(變形例) [晶圓處理] 最後,參照圖7,針對依變形例的晶圓處理之一例進行說明。圖7係顯示依變形例的晶圓處理之一例的流程圖。其中,對於進行和圖5所示之流程圖同一處理的步驟,係標註同一步驟號碼,而省略其說明。
當開始本處理時,進行步驟S10~步驟S26之處理。於步驟S26中,CPU11判定映射結果有異常時,便輸出警報(步驟S28),而結束本處理。
另一方面,CPU11判定映射結果無異常時,若自動判別得到的晶圓W之類別為產品用晶圓及測定用晶圓,CPU11便判定是否並行處理產品用晶圓和測定用晶圓(步驟S30)。此時,產品用晶圓係包含擋片晶圓在內而進行判定。
舉例而言,在圖1中,將載入口LP1所載置之FOUP的晶圓W搬運到處理模組PM1而進行處理,且將載入口LP2所載置之FOUP的晶圓W並行搬運到處理模組PM2而進行處理時,載入口LP1、LP2所載置之FOUP的晶圓W係一邊為產品用晶圓,另一邊為測定用晶圓。
CPU11在判定不並行處理產品用晶圓與測定用晶圓時,CPU11便按照配方,以不超過所取得的參數資料之條件的方式,將晶圓從FOUP搬出,並在處理模組PM進行預定的處理之後,再收納到載入口LP的預定之FOUP(步驟S29),而結束本處理。
另一方面,於步驟S30中,CPU11在判定並行處理產品用晶圓與測定用晶圓時,CPU11便以參數資料所設定的搬運速度當中最慢之搬運速度,進行產品用及測定用晶圓的搬運,該參數資料和收納在複數之各個FOUP的各類別晶圓對應(步驟S34)。接著,CPU11按照配方,以不超過和各類別之晶圓對應的參數資料之條件的方式,並行處理產品用及測定用晶圓(步驟S36),而結束本處理。
如以上所說明,依變形例之基板處理方法,考慮並行搬運且並行處理厚度及重量不同之產品用晶圓與測定用晶圓,而以不超過和各類別晶圓對應的參數資料之條件的方式,進行各晶圓之搬運及處理的控制。
例如,在並行搬運產品用及測定用晶圓時,將搬運速度控制在和各類別晶圓對應的參數資料所設定之搬運速度當中最慢的搬運速度。藉此,即便是依據晶圓類別的自動判別結果,而並行處理不同類別之晶圓的情形,亦可適當地進行異常檢測或搬運。
以上,依上述實施態樣,說明基板處理方法及基板處理系統。但是,依本發明之基板處理方法及基板處理系統並不限於上述實施態樣,可在本發明之範圍內進行各種變形及改良。而且,上述複數之實施態樣所記載的事項,可以在不互相矛盾之範圍內進行組合。
例如,在上述實施態樣及變形例中,CPU11判定映射結果有異常時,便輸出警報(圖5及圖7之步驟S28),但並不限於此。CPU11在判定映射結果有異常時,在設定於參數表16之上限值及/或下限值的範圍內進行晶圓的搬運及處理亦可。又,CPU11在判定映射結果有異常時,停止從FOUP搬出晶圓,由操作人員確認FOUP內的狀態之後,按照操作人員之指示,再開始FOUP內之晶圓的搬運及處理亦可。
依本發明之處理模組PM並不限於圖4所示的平行平板型雙頻施加裝置,亦可適用於電感耦合型電漿(ICP:Inductively Coupled Plasma)處理裝置、使用輻射狀槽孔天線的電漿處理裝置、螺旋波激發型電漿(HWP:Helicon Wave Plasma)處理裝置、以及電子迴旋共振電漿(ECR:Electron Cyclotron Resonance Plasma)處理裝置。
作為蝕刻對象的基板,本說明書針對半導體晶圓W進行說明,但不限於此,亦可為使用於LCD(Liquid Crystal Display,液晶顯示器)、FPD(Flat Panel Display,平板顯示器)等之各種基板、光罩、CD基板或印刷電路板等。
3‧‧‧載置台
10‧‧‧控制部
11‧‧‧CPU
12‧‧‧記憶體
13‧‧‧通信I/F
14‧‧‧顯示器
15、15a、15b‧‧‧配方
16、16a、16b‧‧‧參數表
17‧‧‧處理容器
18‧‧‧氣體供給源
19‧‧‧下部電極
20‧‧‧電腦主機
25‧‧‧上部電極
28‧‧‧氣體孔
30‧‧‧電力供給裝置
32‧‧‧第1高頻電源
33‧‧‧第1匹配器
34‧‧‧第2高頻電源
35‧‧‧第2匹配器
40‧‧‧遮蔽環
45‧‧‧氣體導入口
50‧‧‧擴散室
55‧‧‧氣體通道
60‧‧‧排氣口
65‧‧‧排氣裝置
211‧‧‧第1臂
221‧‧‧第2臂
212、222‧‧‧拾取器
231‧‧‧基台
232‧‧‧引導軌
233‧‧‧線性馬達驅動機構
A1~A4‧‧‧按鈕部
B1~B4‧‧‧空孔部
AU‧‧‧對準器
PM、PM1~PM6‧‧‧處理模組
TM‧‧‧傳送模組
LL1、LL2‧‧‧負載鎖定模組
LM‧‧‧搬運模組
LP、LP1~LP3‧‧‧載入口
G、G1~G10‧‧‧閘閥
D1~D3‧‧‧開閉門
PU‧‧‧處理單元
S10、S12、S14、S16、S18、S20、S22、S24、S26、S28、S29‧‧‧步驟
TU‧‧‧搬運單元
TR1‧‧‧處理單元側搬運裝置
TR2‧‧‧搬運單元側搬運裝置
W‧‧‧晶圓
[圖1]係顯示依本發明一實施態樣的電漿處理系統之一例的圖式; [圖2]係顯示使用於依本發明一實施態樣的電漿處理之配方一例的圖式; [圖3]係顯示依本發明一實施態樣的參數表之一例的圖式; [圖4]係顯示依本發明一實施態樣的處理模組PM之一例的圖式; [圖5]係顯示依本發明一實施態樣的晶圓處理之一例的流程圖; [圖6](a)~(b)係用以說明依本發明一實施態樣的FOUP之識別資訊一例的圖式;及 [圖7]係顯示依本發明變形例的晶圓處理之一例的流程圖。
Claims (9)
- 一種基板處理方法,將收納有基板之基板收納容器載置到載入口,並 對收納在所載置的該基板收納容器之基板的類別進行自動判別,且 參照儲存有「和各個類別的基板之搬運條件逐一相關的參數資料」之儲存部,而依據和自動判別得到的該基板之類別相對應的參數資料,對該基板收納容器所收納的基板之搬運進行控制,以進行基板處理。
- 如申請專利範圍第1項之基板處理方法,其中,該儲存部更儲存和處理條件相關的參數資料,並且參照該儲存部,而依據和自動判別得到的該基板之類別相對應的參數資料以及預定配方,對該基板收納容器所收納的基板之處理進行控制。
- 如申請專利範圍第2項之基板處理方法,其中,在預定配方所設定的基板之處理條件之中,存在有和該參數資料所設定之條件偏離的值時,就在該參數資料所設定之條件內,對該基板的處理進行控制。
- 如申請專利範圍第1至3項中任一項之基板處理方法,其中,依據自動判別得到的該基板之類別,而判定該基板收納容器所收納之基板係和產品基板不同的特殊基板時,便依據該參數資料所設定之搬運條件,將特殊基板之搬運速度控制在較慢於產品基板之搬運速度。
- 如申請專利範圍第1至3項中任一項之基板處理方法,其中,於自動判別該基板的類別之後,且於搬運該基板收納容器所收納的基板之前,依據該參數資料所設定之條件進行映射,而對該基板收納容器所收納的基板進行異常檢測。
- 如申請專利範圍第1至3項中任一項之基板處理方法,其中,在將該基板收納容器載置到該載入口時,取得該基板收納容器的識別資訊,並且依據該識別資訊,對該基板收納容器所收納的基板之類別進行自動判別。
- 如申請專利範圍第1至3項中任一項之基板處理方法,其中, 將複數之該基板收納容器載置到該載入口,並 對收納在所載置的複數之各該基板收納容器的基板之類別進行自動判別,且 將複數之該基板收納容器各自所收納的複數之基板,加以並行處理及搬運時,以「和自動判別得到的複數之該基板各自的類別相對應」之參數資料所設定的搬運速度當中最慢之搬運速度以下的速度,將複數之該基板收納容器各自所收納的複數之基板,加以並行搬運。
- 一種基板處理系統,包含: 載入口,載置收納有基板之基板收納容器;及 控制部,針對收納在該載入口所載置之該基板收納容器的基板之類別進行自動判別,並參照儲存有「和各個類別的基板之搬運條件逐一相關的參數資料」之儲存部,而依據和自動判別得到的該基板之類別相對應的參數資料,對該基板收納容器所收納的基板之搬運進行控制。
- 如申請專利範圍第8項之基板處理系統,其中,該儲存部更儲存和處理條件相關之參數資料; 該控制部參照該儲存部,而依據和自動判別得到的該基板之類別相對應的參數資料以及預定配方,對該基板收納容器所收納的基板之處理進行控制。
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