TW201810513A - 基板保持裝置 - Google Patents

基板保持裝置 Download PDF

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TW201810513A
TW201810513A TW106116816A TW106116816A TW201810513A TW 201810513 A TW201810513 A TW 201810513A TW 106116816 A TW106116816 A TW 106116816A TW 106116816 A TW106116816 A TW 106116816A TW 201810513 A TW201810513 A TW 201810513A
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convex portion
holding device
base body
substrate holding
substrate
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石野智浩
菊地真哉
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日本特殊陶業股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H01L21/67781—Batch transfer of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

Abstract

提供一種基板保持裝置，其可達成抑制在溝槽的上方之基體凹陷、進而可抑制支持基體的基板凹陷。基板保持裝置100係在形成有開口於上面的通氣孔11之平板狀的基體10，形成有從基體10的上面朝向上方突出的複數個凸部21。開口於下面並與通氣孔11連通的溝槽12係形成於基體10，且在溝槽12形成有向下方突出之複數個凸部22。

Description

基板保持裝置
本發明係有關一種將半導體晶圓等的基板吸附保持於基體之基板保持裝置。
自昔以來，在半導體製造系統等使用一種基板保持裝置，其於支持基板之基體的上面以及設置在基台之基體的下面形成多個凸部(銷；pin)，並藉由此凸部保持基板(例如參照專利文獻1)。
又，已知有一種基板保持裝置，其具備在基體下面具有開口的溝槽，開口於基體的上面的通氣孔與溝槽係連通而形成通氣路，基體的下面側被基台所支持，且通氣路與真空吸引裝置連接。
先前技術文獻 專利文獻
專利文獻1 日本國專利第4333065號公報
然而，由於基體的溝槽部分並未被支持於基台，所以有在溝槽的上方之基體會凹陷，進而有基體所支持的基板會凹陷的問題。
於是，本發明係以提供一種可達成能抑制在溝槽上方的基體凹陷、進而能抑制基體所支持的基板凹陷的基板保持裝置為目的。
本發明之基板保持裝置係在形成有開口於上面的1個或複數個通氣孔之平板狀基體，形成有自前述基體的上面向上方突出的複數個上面凸部，前述基板保持裝置的特徵為：開口於下面且與前述通氣孔連通的溝槽係形成在前述基體，且在前述溝槽形成有往下方突出之複數個第1下面凸部。
根據本發明的基板保持裝置，基體不僅藉由基體的下面，也藉由從溝槽朝下方突出的第1下面凸部而被支持於支持基體的基台等。藉此，可達成能抑制在溝槽上方的基體凹陷，進而能抑制基板凹陷。
在本發明之基板保持裝置中，較佳為將前述溝槽包圍成環狀的第1下面環狀凸部、及將前述第1下面環狀凸部包圍成環狀的第2下面環狀凸部係自前述基體的下面向下方突出而形成，前述第1下面環狀凸部與前述第2下面環狀凸部之間形成有自前述基體的下面向下方突出之第2下面凸部。
於此情況，基體除了藉由2個環狀凸部的下端面及凸部的下端面之外，亦藉由自溝槽向下方突出的第1下面凸部，被支持於支持基體的基台等。藉此，可達成抑制溝槽的上方之基體凹陷，進而可抑制基板凹陷。
再者，在本發明之基板保持裝置中，較佳為前述第1下面凸部的下端面及前述第2下面凸部的下端面係位於大致同一平面上，且，前述第1下面環狀凸部的下端面及前述第2下面環狀凸部的下端面係位於比前述第1及第2下面凸部還低1μm以上5μm以下的位置。
原因在於，此情況可降低與設置的基台之接觸面積，減少因粒子所致之面精度惡化的虞慮。
又，前述第1下面凸部的下端面及前述第2下面凸部的下端面係位於大致同一平面上是指並非限定在位於完全同一平面上的情況，其亦包含在對被支持在基體的上面側的基板進行各種步驟之際能確保個別所需之平面度的範圍中實質上位於同一平面的情況。
10、10A‧‧‧基體
11‧‧‧通氣孔
11a‧‧‧開口
12‧‧‧溝槽
12a‧‧‧開口
21‧‧‧凸部(上面凸部)
22、22A‧‧‧凸部(第1下面凸部)
23‧‧‧凸部(第2下面凸部)
31‧‧‧環狀凸部(第1下面環狀凸部)
32‧‧‧環狀凸部(第2下面環狀凸部)
20‧‧‧基台
100、100A‧‧‧基板保持裝置
W‧‧‧基板
圖1係有關本發明之第1實施形態的基板保持裝置之基體的示意底視圖。
圖2係圖1的II-II線之基板保持裝置的示意剖視圖。
圖3係有關本發明之第2實施形態的基板保持裝置之基體的示意底視圖。
圖4係圖3的IV-IV線之基板保持裝置的示意剖視圖。
[第1實施形態]
參照圖1及圖2，針對本發明之第1實施形態的基板保持裝置100進行說明。
基板保持裝置100具有用以吸附保持基板(晶圓)W之大致平板狀的基體10。基體10係藉由陶瓷燒結體形成大致平板狀。除了大致圓板狀外，基體10亦可為多角形板狀或橢圓板狀等各式各樣的形狀。
在基體10形成有開口於上面(表面)的通氣孔11。通氣孔11與開口於下面的溝槽12連通。通氣孔11及溝槽12也可藉由通過基體10內部的通氣路連通。溝槽12係藉由基台(stage)而與真空吸引裝置(未圖示)連接。
溝槽12的截面積係根據真空吸引之際的壓降而定。溝槽12的深度為0.1mm以上0.4mm以下，較佳為0.2mm以上0.3mm以下，例如0.2mm。通氣孔11的寬度為0.5mm以上3.0mm以下，例如0.8mm。
本實施形態中，於基體10的上面，通氣孔11的開口11a有複數個，惟圖示僅有2個，其中的1個係位於基體10的上面的中心。但，開口11a的個數及配置並不局限於此，亦可不置於基體10的中心。
在基體10，複數個凸部21係自其上面向上方突出而形成。凸部21係相當於本發明的上面凸部。基板W被支持在該等凸部21的頂面。凸部21的配置、形狀、高度等只要與形成在已知之基板保持裝置的基體的上面的凸部相同或者類似即可，並無特別地限制。另外，圍繞凸部21的環狀凸部係自基體10上面向上方突出而形成。
在基體10的下面，有溝槽12的開口12a。圖示中，溝槽12之開口12a係形成為自基體10下面的中心朝向外周面側直線地延伸且角部帶有圓弧的大致矩形狀。然後，溝槽12係形成為與開口12a同形狀且朝向上方凹入之形狀，整體形成為角部帶有圓弧的大致長方體狀。
再者，溝槽12係與通氣孔11連接，該通氣孔11具有基體10上面的開口11a且整體為圓筒形狀。據此，基體10上面的開口11a及下面的開口12a係連通。
又，在溝槽12的底面，至少1個凸部22係以向下方突出的方式形成。凸部22相當於本發明之第1下面凸部。凸部22的高度為與溝槽12的深度大致相同。
凸部22的形狀亦可為圓柱形、角錐形、截圓錐形等。由於凸部22也可為例如底角45度左右的大截圓錐形，因而可利用噴砂(blast)加工形成。
但是，由於凸部22形成於溝槽12內，所以以不會妨礙在溝槽12內的真空吸引之形狀為較佳。於是，凸部22係以底角為70°以上85°以下、較佳為75°以上80°以下之高長寬比的陡峭截圓錐形狀為佳。這樣的凸部22可藉由雷射加工形成。但，凸部22並非限於截圓錐形狀，也可為圓柱、角錐等的形狀。
基體10的下面係被支持於基台20的上面。具體言之，基體10的下面及凸部22的下端面係與基台20的上面抵接。
如此，基體10不僅藉由基體10的下面，也藉由自溝槽12的底面向下方突出的凸部22而被支持於基台20。藉此，可達成抑制在溝槽12上方的基體10的凹陷，進而抑制基板W的凹陷。
[第2實施形態]
參照圖3及圖4，說明關於本發明之第2實施形態的基板保持裝置100A。由於基板保持裝置100A與基板保持裝置100類似，所以僅針對相異處進行說明。
在基體10A形成有環狀凸部31，其係以包圍溝槽12的外周的方式呈環狀地自下面向下方突出。圖示中，環狀凸部31係將溝槽12的大致矩形狀開口12a的外周，從下方觀看時，以角部成為帶有圓弧的矩形狀的方式呈環狀連接形成。環狀凸部31係相當於本發明之第1下面環狀凸部。
再者，在基體10A形成有環狀凸部32，其係以包圍環狀凸部31的外周的方式呈環狀地自下面向下方突出。此處，環狀凸部32係自基體10A的外側周面稍靠中心側，且從下方觀看時係呈圓環狀連續而形成。環狀凸部32係相當於本發明之第2下面環狀凸部。
然後，基體10A中，在環狀凸部31與環狀凸部32之間的範圍形成有自下面向下方突出之複數個凸部23。凸部23係相當於本發明之第2下面凸部。環狀凸部31、32及凸部23的高度同為0.1mm以上1.0mm以下，例如為0.15mm。
如此，將環狀凸部31、32及凸部23的下端面設成為大致齊平即可。因此，相較於需要將第1實施形態之基體10的下面的大部分設成大致齊平的情況，可削減研磨面，進而削減研磨的作業時間。
凸部23的形狀亦可為圓柱形、角錐形、截圓錐形等。由於凸部23也可為，例如底角45度左右的大截圓錐形，因而能利用噴砂加工來形成。不過，凸部23亦可為高長寬比的陡峭截圓錐形狀。
再者，至少1個凸部22A以向下方突出的方式形成於溝槽12的底面。凸部22A係相當於本發明之第1下面凸部。凸部22A的高度為溝槽12的深度加上環狀凸部31、32及凸部23的高度之高度，或是形成為與其大致相同的高度。
又，就第2實施形態的變形而言，凸部22A,23的下端面位於大致同一平面上，且，環狀凸部31及、或環狀凸部32的下端面亦可位於比凸部22A,23的下端面還低1μm以上5μm以下的位置。在此情況下，與設置之基台的接觸面積會降低，可減少因粒子(particle)所致之面精度惡化的虞慮，因而較佳。
凸部22A的形狀亦可為圓柱形、角錐形、截圓錐形等。不過，由於凸部22A是形成在溝槽12內，因此，以高長寬比的陡峭截圓錐形狀較佳。
藉由如此構成，基體10A除了藉由2個環狀凸部31,32的下端面及凸部23的下端面之外，也藉由自溝槽12的底面向下方突出之凸部22A被支持於基台 20。藉此，可達成抑制在溝槽12的上方之基體10A的凹陷，進而可抑制基板W的凹陷。
又，為明確化圖示中基板支持裝置100,100A的構成，通氣孔11、溝槽12、凸部21,22,22A,23、環狀凸部31,32及基台20等係設為預設(default)，除了各構成要素的剖面圖中的長寬比之外，寬度或者高度與彼此之間隔的比率等係與圖示者實際上不同。
另外，雖未圖示，但於基體10也可形成有升降銷(lift pin)孔及肋(lib)等。另外，溝槽12及其開口12a的形狀並不限於上述者。例如，溝槽12的開口12a的形狀不限制於大致矩形狀，亦可為多角形狀、圓形狀、橢圓形狀等任意形狀。
100‧‧‧基板保持裝置
10‧‧‧基體
11‧‧‧通氣孔
11a‧‧‧開口
12‧‧‧溝槽
12a‧‧‧開口
20‧‧‧基台
21‧‧‧凸部
22‧‧‧凸部
W‧‧‧基板

Claims (3)

  1. 一種基板保持裝置，係在形成有開口於上面的1個或複數個通氣孔之平板狀基體，形成有自前述基體的上面向上方突出的複數個上面凸部，前述基板保持裝置的特徵為：開口在下面且與前述通氣孔連通的溝槽係形成於前述基體，且在前述溝槽形成有朝下方突出之複數個第1下面凸部。
  2. 如請求項1之基板保持裝置，其中將前述溝槽包圍成環狀的第1下面環狀凸部、及將前述第1下面環狀凸部包圍成環狀的第2下面環狀凸部係自前述基體的下面向下方突出而形成，在前述第1下面環狀凸部與前述第2下面環狀凸部之間，形成有自前述基體的下面向下方突出之第2下面凸部。
  3. 如請求項2之基板保持裝置，其中前述第1下面凸部的下端面及前述第2下面凸部的下端面係位於大致同一平面上，且，前述第1下面環狀凸部的下端面及前述第2下面環狀凸部的下端面係位於比前述第1及第2下面凸部還低1μm以上5μm以下的位置。
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US20170345701A1 (en) 2017-11-30
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