TW201804528A - 雷射加工裝置 - Google Patents

雷射加工裝置 Download PDF

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Publication number
TW201804528A
TW201804528A TW106105926A TW106105926A TW201804528A TW 201804528 A TW201804528 A TW 201804528A TW 106105926 A TW106105926 A TW 106105926A TW 106105926 A TW106105926 A TW 106105926A TW 201804528 A TW201804528 A TW 201804528A
Authority
TW
Taiwan
Prior art keywords
resin layer
resin
laser
layer
resin substrate
Prior art date
Application number
TW106105926A
Other languages
English (en)
Chinese (zh)
Inventor
池田剛史
荒川美紀
橋本百加
山本幸司
Original Assignee
三星鑽石工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三星鑽石工業股份有限公司 filed Critical 三星鑽石工業股份有限公司
Publication of TW201804528A publication Critical patent/TW201804528A/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70Auxiliary operations or equipment
    • B23K26/702Auxiliary equipment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Laser Beam Processing (AREA)
TW106105926A 2016-07-28 2017-02-22 雷射加工裝置 TW201804528A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016148328A JP6814459B2 (ja) 2016-07-28 2016-07-28 レーザ加工方法
JPJP2016-148328 2016-07-28

Publications (1)

Publication Number Publication Date
TW201804528A true TW201804528A (zh) 2018-02-01

Family

ID=61075568

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106105926A TW201804528A (zh) 2016-07-28 2017-02-22 雷射加工裝置

Country Status (4)

Country Link
JP (1) JP6814459B2 (ja)
KR (1) KR102353912B1 (ja)
CN (1) CN107685199A (ja)
TW (1) TW201804528A (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020017471A (ja) 2018-07-27 2020-01-30 三星ダイヤモンド工業株式会社 多層基板を切断する方法及び切断装置
JP2020019070A (ja) 2018-07-30 2020-02-06 三星ダイヤモンド工業株式会社 多層基板を切断する方法及び切断装置
JP2020053208A (ja) 2018-09-26 2020-04-02 三星ダイヤモンド工業株式会社 基板小片の切り出し方法及び切出装置
JP2020088217A (ja) 2018-11-28 2020-06-04 三星ダイヤモンド工業株式会社 基板小片の切り出し方法及び切出装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08174262A (ja) * 1994-12-27 1996-07-09 Matsushita Electric Ind Co Ltd エキシマレーザ加工方法
JP4886937B2 (ja) * 2001-05-17 2012-02-29 リンテック株式会社 ダイシングシート及びダイシング方法
JP4141809B2 (ja) * 2002-11-15 2008-08-27 セイコーエプソン株式会社 レーザー加工方法
JP4233999B2 (ja) * 2003-12-25 2009-03-04 日東電工株式会社 積層型偏光板およびその製造方法
JP2005306418A (ja) * 2004-04-20 2005-11-04 Shin Etsu Polymer Co Ltd 電子部品搬送体およびその製造方法
JP2006088260A (ja) * 2004-09-22 2006-04-06 Sumitomo Metal Mining Package Materials Co Ltd 接着剤層付きフレキシブル樹脂基板の穴開け加工方法
JP2006186263A (ja) * 2004-12-28 2006-07-13 Disco Abrasive Syst Ltd 被加工物保持装置
JP2007057622A (ja) * 2005-08-22 2007-03-08 Ricoh Co Ltd 光学素子及びその製造方法、光学素子用形状転写型の製造方法及び光学素子用転写型
CN101195191A (zh) * 2006-12-06 2008-06-11 中华映管股份有限公司 激光切割装置及激光切割方法
JP5096040B2 (ja) * 2007-05-16 2012-12-12 日東電工株式会社 レーザー加工方法及びレーザー加工品
WO2011016572A1 (ja) * 2009-08-06 2011-02-10 住友化学株式会社 偏光板の製造方法
AU2010348477B2 (en) * 2010-03-19 2015-04-09 Toray Industries, Inc. Method for cutting carbon fiber base
JP2012045567A (ja) * 2010-08-26 2012-03-08 Sumitomo Electric Ind Ltd レーザ加工方法および装置
JP5764430B2 (ja) * 2011-08-22 2015-08-19 花王株式会社 積層体の製造方法
JP2014008511A (ja) 2012-06-28 2014-01-20 Mitsubishi Rayon Co Ltd 熱可塑性樹脂シートを切断する方法及び導光板
JP6192300B2 (ja) * 2013-01-17 2017-09-06 株式会社トッパンTdkレーベル ラベルシート及びその製造方法
JP2014231071A (ja) * 2013-05-29 2014-12-11 三星ダイヤモンド工業株式会社 レーザ光による基板切断装置
JP2015020173A (ja) * 2013-07-16 2015-02-02 Ntn株式会社 レーザスクライブ装置およびレーザスクライブ加工方法
JP2016013566A (ja) * 2014-07-02 2016-01-28 Ntn株式会社 レーザ加工装置およびレーザ加工方法
KR20170088844A (ko) * 2014-11-20 2017-08-02 니폰 제온 가부시키가이샤 광학 필름의 제조 방법

Also Published As

Publication number Publication date
JP6814459B2 (ja) 2021-01-20
JP2018015784A (ja) 2018-02-01
CN107685199A (zh) 2018-02-13
KR20180013676A (ko) 2018-02-07
KR102353912B1 (ko) 2022-01-20

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