TW201804528A - Laser processing device capable of preventing a lower part of the resin layer from being processed when a multi-layer resin substrate is performed with a half-cutting processing - Google Patents
Laser processing device capable of preventing a lower part of the resin layer from being processed when a multi-layer resin substrate is performed with a half-cutting processing Download PDFInfo
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- TW201804528A TW201804528A TW106105926A TW106105926A TW201804528A TW 201804528 A TW201804528 A TW 201804528A TW 106105926 A TW106105926 A TW 106105926A TW 106105926 A TW106105926 A TW 106105926A TW 201804528 A TW201804528 A TW 201804528A
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- 239000011347 resin Substances 0.000 title claims abstract description 105
- 229920005989 resin Polymers 0.000 title claims abstract description 105
- 239000000758 substrate Substances 0.000 title claims abstract description 38
- 239000010410 layer Substances 0.000 claims abstract description 75
- 239000012790 adhesive layer Substances 0.000 claims abstract description 17
- 238000010521 absorption reaction Methods 0.000 claims description 14
- 230000003287 optical effect Effects 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 5
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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Abstract
Description
本發明係關於一種雷射加工裝置，尤其是關於一種藉由照射雷射光而將樹脂基板切斷之裝置。 The present invention relates to a laser processing device, and more particularly to a device for cutting a resin substrate by irradiating laser light.
樹脂基板之種類分為單層樹脂基板及多層樹脂基板。多層樹脂基板例如包含不同材料之多個樹脂層。 The types of resin substrates are divided into single-layer resin substrates and multilayer resin substrates. The multilayer resin substrate includes, for example, a plurality of resin layers of different materials.
作為將多層樹脂基板切斷之裝置，可使用雷射加工裝置(例如，參照專利文獻1)。藉由雷射加工裝置，將多層樹脂基板僅上側之層切斷(半切斷(half-cut-off)加工)、或所有層切斷(全切加工)。 As a device for cutting the multilayer resin substrate, a laser processing device can be used (for example, refer to Patent Document 1). With the laser processing apparatus, only the upper layer of the multilayer resin substrate is cut (half-cut-off processing), or all layers are cut (full-cut processing).
[先前技術文獻] [Prior technical literature]
[專利文獻] [Patent Literature]
[專利文獻1]日本特開2014-8511號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2014-8511
對多層樹脂基板施以半切斷加工時，僅將表面之樹脂層切斷。更詳細而言，對表面之樹脂層及黏著層進行雷射加工。 When the multilayer resin substrate is subjected to a half-cut process, only the surface resin layer is cut. More specifically, laser processing is performed on the surface resin layer and the adhesive layer.
但視所使用之雷射之光學特性，而存在有於對表面之樹脂層及黏著層進行加工時加工到下側之中間樹脂層之情況。 However, depending on the optical characteristics of the laser used, there may be a case where the resin layer and the adhesive layer on the surface are processed to an intermediate resin layer on the lower side.
本發明之目的在於：於雷射加工裝置中，對多層樹脂基板施以半切斷加工時，不會加工到下側之樹脂層。 An object of the present invention is to prevent a resin layer from being processed to a lower side when a multilayer resin substrate is subjected to half-cut processing in a laser processing apparatus.
以下，作為用以解決課題之手段，對多個態樣進行說明。該等態樣可視需要任意組合。 Hereinafter, a plurality of aspects will be described as a means for solving the problem. These patterns can be combined as desired.
本發明之一觀點之雷射加工裝置，係將自表面側起具有第1樹脂層、黏著層及第2樹脂層之多層樹脂基板切斷之裝置，具備雷射裝置。 A laser processing device according to an aspect of the present invention is a device for cutting a multilayer resin substrate having a first resin layer, an adhesive layer, and a second resin layer from a surface side, and includes a laser device.
雷射光於第1樹脂層吸收率高，且於第2樹脂層吸收率低。 Laser light has a high absorption rate in the first resin layer and a low absorption rate in the second resin layer.
於該裝置中，藉由雷射光切斷第1樹脂層時，僅第1樹脂層被加工，不會對第2樹脂層造成損傷。其原因在於：雷射光於第1樹脂層吸收率高，但於第2樹脂層吸收率低。 In this device, when the first resin layer is cut by laser light, only the first resin layer is processed without causing damage to the second resin layer. The reason is that laser light has a high absorption rate in the first resin layer, but has a low absorption rate in the second resin layer.
亦可為，雷射光於第1樹脂層之吸收率為80%以上(較佳為90%以上)，且雷射光於第2樹脂層之吸收率為40%以下(較佳為30%以下)。 The absorption rate of laser light in the first resin layer is 80% or more (preferably 90% or more), and the absorption rate of laser light in the second resin layer is 40% or less (preferably 30% or less) .
亦可為，第1樹脂層包含PET，第2樹脂層包含PI(聚醯亞胺樹脂)，且雷射裝置亦可為CO2雷射。 The first resin layer may include PET, the second resin layer may include PI (polyimide resin), and the laser device may be a CO 2 laser.
於本發明之雷射加工裝置中，對多層樹脂基板施以半切斷加工時，能夠不加工到下側之樹脂層。 In the laser processing apparatus of the present invention, when the multi-layer resin substrate is subjected to half-cut processing, it is possible not to process the resin layer to the lower side.
1‧‧‧雷射加工裝置 1‧‧‧laser processing device
3‧‧‧雷射裝置 3‧‧‧laser device
5‧‧‧機械驅動系統 5‧‧‧ mechanical drive system
7‧‧‧控制部 7‧‧‧Control Department
9‧‧‧雷射振盪器 9‧‧‧laser oscillator
11‧‧‧傳輸光學系統 11‧‧‧ Transmission Optical System
13‧‧‧底座 13‧‧‧base
15‧‧‧加工台 15‧‧‧Processing table
17‧‧‧移動裝置 17‧‧‧ mobile device
A1‧‧‧第1黏著層 A1‧‧‧The first adhesive layer
A2‧‧‧第2黏著層 A2‧‧‧Second Adhesive Layer
C‧‧‧切斷線 C‧‧‧cut line
L1‧‧‧第1樹脂層 L1‧‧‧The first resin layer
L2‧‧‧第2樹脂層 L2‧‧‧Second resin layer
L3‧‧‧第3樹脂層 L3‧‧‧The third resin layer
P‧‧‧樹脂基板 P‧‧‧ resin substrate
圖1係本發明之第1實施形態之雷射加工裝置之示意圖。 FIG. 1 is a schematic diagram of a laser processing apparatus according to a first embodiment of the present invention.
圖2係顯示樹脂基板之構造之示意性剖面圖。 FIG. 2 is a schematic cross-sectional view showing the structure of a resin substrate.
圖3係顯示樹脂基板之加工狀態之示意性剖面圖。 FIG. 3 is a schematic sectional view showing a processing state of a resin substrate.
1.第1實施形態 1. First embodiment
(1)整體構成 (1) Overall composition
於圖1中顯示本發明之一實施形態之樹脂基板切斷用的雷射加工裝置1之整體構成。圖1係本發明之第1實施形態之雷射加工裝置之示意圖。 FIG. 1 shows the overall configuration of a laser processing apparatus 1 for cutting a resin substrate according to an embodiment of the present invention. FIG. 1 is a schematic diagram of a laser processing apparatus according to a first embodiment of the present invention.
雷射加工裝置1，係用以對樹脂基板P施以半切斷加工之裝置。所謂樹脂基板，係亦被稱之為樹脂片、樹脂膜。 The laser processing device 1 is a device for performing half-cut processing on the resin substrate P. The so-called resin substrate is also called a resin sheet or a resin film.
雷射加工裝置1，具備雷射裝置3。雷射裝置3具有用以對樹脂基板P照射雷射光之雷射振盪器9。雷射振盪器9例如為CO2雷射。 The laser processing device 1 includes a laser device 3. The laser device 3 includes a laser oscillator 9 for irradiating the resin substrate P with laser light. The laser oscillator 9 is, for example, a CO 2 laser.
雷射裝置3，具有將雷射光傳輸至下述機械驅動系統之傳輸光學系統11。傳輸光學系統11例如具有聚光透鏡、多個面鏡、稜鏡、擴束器(beam expander)等，但該等並未予以圖示。又，傳輸光學系統11，例如具有X軸方向移動機構(未圖示)，該X軸方向移動機構係用以使組裝有雷射振盪器9及其他光學系統之雷射照射頭(未圖示)於X軸方向移動。 The laser device 3 includes a transmission optical system 11 that transmits laser light to a mechanical drive system described below. The transmission optical system 11 includes, for example, a condenser lens, a plurality of mirrors, a chirp, a beam expander, and the like, but these are not illustrated. The transmission optical system 11 includes, for example, an X-axis direction moving mechanism (not shown). The X-axis direction moving mechanism is a laser irradiation head (not shown) in which a laser oscillator 9 and other optical systems are assembled. ) Move in the X axis direction.
雷射加工裝置1，具備機械驅動系統5。機械驅動系統5，具有底座13、載置樹脂基板P之加工台15、及使加工台15相對底座13於 水平方向移動之移動裝置17。移動裝置17，係具有導軌、移動台、馬達等之公知的機構。 The laser processing apparatus 1 includes a mechanical drive system 5. The mechanical drive system 5 includes a base 13, a processing table 15 on which a resin substrate P is placed, and a processing table 15 facing the base 13. Moving device 17 moving horizontally. The moving device 17 is a well-known mechanism having a guide rail, a moving table, a motor, and the like.
雷射加工裝置1，具備控制部7。控制部7係具有處理器(例如CPU)、記憶裝置(例如ROM、RAM、HDD、SSD等)、各種介面(例如A/D轉換器、D/A轉換器、通訊介面等)之電腦系統。控制部7藉由執行保存於記憶部(對應於記憶裝置之記憶區域之部分或全部)中之程式，進行各種控制動作。 The laser processing apparatus 1 includes a control unit 7. The control unit 7 is a computer system including a processor (for example, a CPU), a memory device (for example, ROM, RAM, HDD, SSD, etc.), and various interfaces (for example, A / D converter, D / A converter, and communication interface). The control section 7 executes various control operations by executing programs stored in the storage section (corresponding to part or all of the storage area of the storage device).
控制部7可由單一處理器構成，亦可為了各控制而由獨立之多個處理器構成。 The control unit 7 may be configured by a single processor, or may be configured by a plurality of independent processors for each control.
於控制部7，連接有檢測樹脂基板P之大小、形狀及位置之感測器、用以檢測各裝置之狀態之感測器及開關、以及資訊輸入裝置，但該等並未予以圖示。 Sensors for detecting the size, shape, and position of the resin substrate P, sensors and switches for detecting the status of each device, and information input devices are connected to the control section 7, but these are not shown in the figures.
於該實施形態中，控制部7可控制雷射振盪器9。又，控制部7可控制移動裝置17。進一步地，控制部7可控制傳輸光學系統11。 In this embodiment, the control unit 7 can control the laser oscillator 9. The control unit 7 can control the mobile device 17. Further, the control section 7 may control the transmission optical system 11.
使用圖2，對樹脂基板P之構造進行說明。圖2係顯示樹脂基板之構造之示意性剖面圖。 The structure of the resin substrate P will be described using FIG. 2. FIG. 2 is a schematic cross-sectional view showing the structure of a resin substrate.
如圖2所示，樹脂基板P係由多層樹脂所構成之多層樹脂基板。具體而言，樹脂基板P為三層構造，自表面側起具有第1樹脂層L1、第2樹脂層L2及第3樹脂層L3。 As shown in FIG. 2, the resin substrate P is a multilayer resin substrate composed of a multilayer resin. Specifically, the resin substrate P has a three-layer structure and includes a first resin layer L1, a second resin layer L2, and a third resin layer L3 from the surface side.
作為一例，第1樹脂層L1包含PET。第2樹脂層L2包含PI。第3樹脂層L3包含PET。 As an example, the first resin layer L1 includes PET. The second resin layer L2 contains PI. The third resin layer L3 includes PET.
作為一例，各樹脂層藉由第1黏著層A1、第2黏著層A2而相互黏著。 第1黏著層A1配置於第1樹脂層L1與第2樹脂層L2之間。第2黏著層A2配置於第2樹脂層L2與第3樹脂層L3之間。 As an example, the resin layers are adhered to each other by the first adhesive layer A1 and the second adhesive layer A2. The first adhesive layer A1 is disposed between the first resin layer L1 and the second resin layer L2. The second adhesive layer A2 is disposed between the second resin layer L2 and the third resin layer L3.
作為一例，於第2樹脂層L2之上面形成有電路(未圖示)。 As an example, a circuit (not shown) is formed on the second resin layer L2.
(2)動作 (2) Action
使用圖2及圖3，針對藉由雷射光對樹脂基板P之加工動作進行說明。圖3係顯示樹脂基板之加工狀態之示意性剖面圖。 The processing operation of the resin substrate P by laser light will be described using FIGS. 2 and 3. FIG. 3 is a schematic sectional view showing a processing state of a resin substrate.
控制部7驅動雷射振盪器9，執行樹脂基板P之切斷。雷射振盪器9藉由使雷射光沿著切斷線C移動，而將樹脂基板P半切斷。雷射光之掃描次數可為1次，亦可為多次。 The control unit 7 drives the laser oscillator 9 to perform cutting of the resin substrate P. The laser oscillator 9 half-cuts the resin substrate P by moving the laser light along the cutting line C. The laser light can be scanned once or multiple times.
具體而言，切斷之對象係第1樹脂層L1及第1黏著層A1。 對於切斷，可使用雷射振盪器9即CO2雷射。如圖4所示，藉由雷射光R，將第1樹脂層L1及第1黏著層A1切斷。藉此，形成切斷部19。再者，雷射光R之焦點位置較佳為控制於第1樹脂層L1或第1黏著層A1內。 Specifically, the objects to be cut are the first resin layer L1 and the first adhesive layer A1. For the cut-off, a laser oscillator 9 or a CO 2 laser can be used. As shown in FIG. 4, the first resin layer L1 and the first adhesive layer A1 are cut by the laser light R. Thereby, the cutting part 19 is formed. The focal position of the laser light R is preferably controlled within the first resin layer L1 or the first adhesive layer A1.
於該裝置中，藉由雷射光R切斷第1樹脂層L1時，僅第1樹脂層L1被加工，不會對第2樹脂層L2造成損傷。其原因在於：雷射光R於第1樹脂層L1吸收率高，但於第2樹脂層L2吸收率低。 In this device, when the first resin layer L1 is cut by the laser light R, only the first resin layer L1 is processed without causing damage to the second resin layer L2. This is because the laser light R has a high absorption rate in the first resin layer L1, but has a low absorption rate in the second resin layer L2.
作為具體例，就CO2雷射於PET之吸收率而言，於9.4μm波段之情形時為90%左右，於10.6μm波段之情形時為80%。又，就CO2雷射於PI之吸收率而言，於9.4μm波段之情形時為25%左右。 As a specific example, the absorption rate of CO 2 laser on PET is about 90% in the case of the 9.4 μm band and 80% in the case of the 10.6 μm band. The absorption rate of the CO 2 laser on the PI is about 25% in the case of the 9.4 μm band.
2.其他實施形態 2. Other embodiments
以上，雖針對本發明之一實施形態進行了說明，但本發明並不限定於 上述實施形態，可於不脫離發明要旨之範圍內進行各種變更。 As mentioned above, although one Embodiment of this invention was described, this invention is not limited to this. The above embodiment can be variously modified without departing from the gist of the invention.
上述樹脂基板之樹脂層為3層，但樹脂層亦可為2層，又亦可為4層以上。 The resin layer of the resin substrate is three layers, but the resin layer may be two layers or four or more layers.
上述基板全部以樹脂層構成，但亦可於2層樹脂層之下設置其他層(例如，金屬層)。 The above substrates are all made of resin layers, but other layers (for example, metal layers) may be provided under the two resin layers.
雷射裝置、機械驅動系統之具體構成並不限定於上述實施形態。 The specific configurations of the laser device and the mechanical drive system are not limited to the above embodiments.
樹脂基板之形狀、切斷線之形狀並不特別限定。 The shape of the resin substrate and the shape of the cutting line are not particularly limited.
[產業上之可利用性] [Industrial availability]
本發明可廣泛應用於藉由照射雷射光將樹脂基板切斷之雷射加工裝置。 The present invention can be widely applied to a laser processing apparatus that cuts a resin substrate by irradiating laser light.
19‧‧‧切斷部 19‧‧‧ cutting section
A1‧‧‧第1黏著層 A1‧‧‧The first adhesive layer
A2‧‧‧第2黏著層 A2‧‧‧Second Adhesive Layer
L1‧‧‧第1樹脂層 L1‧‧‧The first resin layer
L2‧‧‧第2樹脂層 L2‧‧‧Second resin layer
L3‧‧‧第3樹脂層 L3‧‧‧The third resin layer
P‧‧‧樹脂基板 P‧‧‧ resin substrate
R‧‧‧雷射光 R‧‧‧ laser light
Claims (3)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016148328A JP6814459B2 (en) | 2016-07-28 | 2016-07-28 | Laser processing method |
| JPJP2016-148328 | 2016-07-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201804528A true TW201804528A (en) | 2018-02-01 |
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| TW106105926A TW201804528A (en) | 2016-07-28 | 2017-02-22 | Laser processing device capable of preventing a lower part of the resin layer from being processed when a multi-layer resin substrate is performed with a half-cutting processing |
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| JP (1) | JP6814459B2 (en) |
| KR (1) | KR102353912B1 (en) |
| CN (1) | CN107685199A (en) |
| TW (1) | TW201804528A (en) |
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| JP2020017471A (en) | 2018-07-27 | 2020-01-30 | 三星ダイヤモンド工業株式会社 | Method and device for cutting multilayer substrate |
| JP2020019070A (en) | 2018-07-30 | 2020-02-06 | 三星ダイヤモンド工業株式会社 | Method of cutting multilayer substrate and cutting device |
| JP2020053208A (en) | 2018-09-26 | 2020-04-02 | 三星ダイヤモンド工業株式会社 | Method and apparatus for cutting substrate pieces |
| JP2020088217A (en) | 2018-11-28 | 2020-06-04 | 三星ダイヤモンド工業株式会社 | Substrate piece cutting method and cutting device |
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| JPH08174262A (en) * | 1994-12-27 | 1996-07-09 | Matsushita Electric Ind Co Ltd | Excimer laser machining method |
| JP4886937B2 (en) * | 2001-05-17 | 2012-02-29 | リンテック株式会社 | Dicing sheet and dicing method |
| JP4141809B2 (en) * | 2002-11-15 | 2008-08-27 | セイコーエプソン株式会社 | Laser processing method |
| JP4233999B2 (en) * | 2003-12-25 | 2009-03-04 | 日東電工株式会社 | Laminated polarizing plate and manufacturing method thereof |
| JP2005306418A (en) * | 2004-04-20 | 2005-11-04 | Shin Etsu Polymer Co Ltd | Electronic component carrying body and manufacturing method for the same |
| JP2006088260A (en) * | 2004-09-22 | 2006-04-06 | Sumitomo Metal Mining Package Materials Co Ltd | Method of perforating flexible resin substrate with adhesive layer |
| JP2006186263A (en) * | 2004-12-28 | 2006-07-13 | Disco Abrasive Syst Ltd | Workpiece holding device |
| JP2007057622A (en) * | 2005-08-22 | 2007-03-08 | Ricoh Co Ltd | Optical element, manufacturing method thereof, method for manufacturing shape transfer mold for optical element, and transfer mold for optical element |
| CN101195191A (en) * | 2006-12-06 | 2008-06-11 | 中华映管股份有限公司 | Laser device for cutting and method thereof |
| JP5096040B2 (en) * | 2007-05-16 | 2012-12-12 | 日東電工株式会社 | Laser processing method and laser processed product |
| KR101102159B1 (en) * | 2009-08-06 | 2012-01-02 | 수미토모 케미칼 컴퍼니 리미티드 | Method for manufacturing polarizing plate |
| AU2010348477B2 (en) * | 2010-03-19 | 2015-04-09 | Toray Industries, Inc. | Method for cutting carbon fiber base |
| JP2012045567A (en) * | 2010-08-26 | 2012-03-08 | Sumitomo Electric Ind Ltd | Laser beam machining method and device |
| JP5764430B2 (en) * | 2011-08-22 | 2015-08-19 | 花王株式会社 | Manufacturing method of laminate |
| JP2014008511A (en) | 2012-06-28 | 2014-01-20 | Mitsubishi Rayon Co Ltd | Method of cutting thermoplastic resin sheet, and light guide plate |
| JP6192300B2 (en) * | 2013-01-17 | 2017-09-06 | 株式会社トッパンＴｄｋレーベル | Label sheet and manufacturing method thereof |
| JP2014231071A (en) * | 2013-05-29 | 2014-12-11 | 三星ダイヤモンド工業株式会社 | Substrate cutting device by using laser beam |
| JP2015020173A (en) * | 2013-07-16 | 2015-02-02 | Ntn株式会社 | Laser scribe device and laser scribe processing method |
| JP2016013566A (en) * | 2014-07-02 | 2016-01-28 | Ntn株式会社 | Laser processor and laser processing method |
| US10478918B2 (en) * | 2014-11-20 | 2019-11-19 | Zeon Corporation | Method for manufacturing optical film |
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| KR102353912B1 (en) | 2022-01-20 |
| JP2018015784A (en) | 2018-02-01 |
| KR20180013676A (en) | 2018-02-07 |
| CN107685199A (en) | 2018-02-13 |
| JP6814459B2 (en) | 2021-01-20 |
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