JP2017037912A - Inspecting wafer, and method for using inspecting wafer - Google Patents
Inspecting wafer, and method for using inspecting wafer Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000007689 inspection Methods 0.000 claims abstract description 76
- 238000012545 processing Methods 0.000 claims abstract description 74
- 239000002184 metal Substances 0.000 claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- 239000011888 foil Substances 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000001514 detection method Methods 0.000 claims abstract description 9
- 230000001678 irradiating effect Effects 0.000 claims description 15
- 239000003963 antioxidant agent Substances 0.000 claims description 7
- 230000003078 antioxidant effect Effects 0.000 claims description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 238000012360 testing method Methods 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 235000012431 wafers Nutrition 0.000 description 83
- 239000010410 layer Substances 0.000 description 49
- 239000000463 material Substances 0.000 description 10
- 238000002844 melting Methods 0.000 description 10
- 230000008018 melting Effects 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 239000000155 melt Substances 0.000 description 9
- 238000003754 machining Methods 0.000 description 6
- 238000003384 imaging method Methods 0.000 description 5
- 239000002346 layers by function Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 238000012795 verification Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
Abstract
Description
本発明は、基板の分割予定ラインに沿った内部に改質層を形成するレーザー加工装置の、レーザー光線の漏れ光による影響を検査するための検査用ウエーハ、および該検査用ウエーハの使用方法に関する。 The present invention relates to a wafer for inspection for inspecting the influence of leakage light of a laser beam in a laser processing apparatus for forming a modified layer inside a division line of a substrate, and a method of using the wafer for inspection.
ＩＣ、ＬＳＩ、ＬＥＤ、ＭＥＭＳ、ＣＭＯＳ等のデバイスが分割予定ラインによって区画された表面に形成されたウエーハは、レーザー加工装置によって個々のデバイスに分割され、このように分割された半導体デバイスはパッケージングされて、携帯電話、パソコン等の電気機器に利用される。 Wafers formed on the surface where devices such as IC, LSI, LED, MEMS, CMOS, etc. are partitioned by dividing lines are divided into individual devices by a laser processing apparatus, and the semiconductor devices thus divided are packaged. It is used for electric devices such as mobile phones and personal computers.
上記したレーザー加工装置は、一例として、ウエーハを保持する保持手段と、該保持手段に保持されたウエーハに対して透過性を有する波長のレーザー光線の集光点を分割予定ラインの内部に位置付けて照射し、改質層を形成するレーザー光線照射手段と、該保持手段と該レーザー光線照射手段とを相対的に加工送りする送り手段と、から概ね構成されており、ウエーハを個々のデバイスに分割するための起点を高精度に形成することが知られている（例えば、特許文献１を参照）。 As an example, the laser processing apparatus described above irradiates the holding means for holding the wafer, and the focusing point of the laser beam having a wavelength that is transparent to the wafer held by the holding means is positioned inside the planned dividing line. The laser beam irradiating means for forming the modified layer, and the feeding means for relatively processing and feeding the holding means and the laser beam irradiating means, and for dividing the wafer into individual devices. It is known that the starting point is formed with high accuracy (see, for example, Patent Document 1).
また、上記のようなレーザー加工装置により分割される個々のデバイスは、基板の表面に機能層が積層されて構成されることから、レーザー光線の集光点は、ウエーハの裏面側から該ウエーハの内部の所定の深さ位置に位置付けて照射する必要があるが、該改質層の形成に寄与しなかったレーザー光線が漏れ光となり、レーザー光線の照射条件や、当該漏れ光が透過する角度によっては表面側に形成されたデバイスを損傷する虞があることが知られている（例えば、特許文献２を参照）。 In addition, since each device divided by the laser processing apparatus as described above is configured by laminating functional layers on the surface of the substrate, the condensing point of the laser beam is from the back side of the wafer to the inside of the wafer. However, the laser beam that did not contribute to the formation of the modified layer becomes leakage light, and depending on the irradiation condition of the laser beam and the angle through which the leakage light passes, the surface side It is known that there is a possibility of damaging a device formed on the substrate (for example, see Patent Document 2).
本願の発明者がレーザー加工装置におけるレーザー加工時のデバイスの損傷の原因についてさらに鋭意検討した結果、レーザー加工装置においてウエーハに対して照射されたレーザー光線のうち、単にウエーハ内を透過し、表面側に到達したレーザー光線の一部がデバイスの損傷を生じさせるのみならず、該レーザー光線が改質層又は改質層の周辺に生成されたクラックによって予期せぬ方向に反射、屈折、散乱し、該レーザー光線の集光点の直下方向に存在する分割予定ラインに沿った領域の外、すなわち、機能層が積層されることにより形成されたデバイスが配設された領域に、該レーザー光線が飛散し、当該飛散したレーザー光（以下「飛散光」ともいう。）により、該デバイスの一部、例えば、配線層が損傷するという問題があることが判明した。 As a result of further diligent investigation by the inventors of the present application on the cause of damage to the device during laser processing in the laser processing apparatus, the laser beam irradiated to the wafer in the laser processing apparatus simply passes through the wafer and is on the surface side. Not only does a part of the laser beam that reaches the device cause damage to the device, but the laser beam is reflected, refracted, or scattered in an unexpected direction by a crack generated around the modified layer or the modified layer. The laser beam is scattered outside the region along the planned dividing line that exists in the direction directly below the condensing point, that is, the region where the device formed by stacking the functional layers is disposed. There is a problem that a part of the device, for example, a wiring layer may be damaged by laser light (hereinafter also referred to as “scattered light”). There was found.
さらに、レーザー加工装置において、上記したようなデバイスの品質低下を生じさせないように該加工を実行するためには、被加工物であるウエーハの材質、厚さ等に応じて、レーザー光線をどのような照射条件で照射した場合に、デバイスを形成する機能層に対してどの程度影響があるのか、を検証する必要がある。 Further, in the laser processing apparatus, in order to perform the processing so as not to cause the above-described deterioration in the quality of the device, the laser beam is changed according to the material, thickness, etc. of the wafer as the workpiece. It is necessary to verify how much influence is exerted on the functional layer forming the device when irradiated under irradiation conditions.
しかし、ウエーハに形成されたデバイスの損傷は被加工物であるウエーハ内部で起こることから、実際の被加工物であるウエーハを使用して該影響を検証しようとしても、その外観からは破壊の状態を確認することが容易ではなく、該ウエーハの表面側に積層された機能層の一部を破壊するようなレーザー加工の条件を回避しながらレーザー加工装置の種々の条件を設定することが困難であるという問題がある。 However, since the damage of the device formed on the wafer occurs inside the wafer that is the workpiece, even if you try to verify the effect using the wafer that is the actual workpiece, the appearance of the device is broken. It is not easy to confirm the conditions, and it is difficult to set various conditions of the laser processing apparatus while avoiding the conditions of laser processing that destroys a part of the functional layer laminated on the surface side of the wafer. There is a problem that there is.
本発明は、上記事実に鑑みてなされたものであり、その主たる技術課題は、ウエーハの裏面から該ウエーハを構成する基板に対して透過性を有する波長のレーザー光線を照射して該基板の分割予定ラインに沿った内部に改質層を形成するレーザー加工装置において、レーザー加工装置におけるレーザー光線の照射条件に応じて、該レーザー光線の漏れ光による影響を容易に検証することが可能な検査用ウエーハ、および該検査用ウエーハの使用方法を提供することにある。 The present invention has been made in view of the above-mentioned facts, and its main technical problem is to divide the substrate by irradiating a laser beam having a wavelength that is transmissive to the substrate constituting the wafer from the back surface of the wafer. In a laser processing apparatus for forming a modified layer in the interior along a line, an inspection wafer capable of easily verifying the influence of leakage light of the laser beam according to the irradiation condition of the laser beam in the laser processing apparatus, and The object is to provide a method of using the inspection wafer.
なお、本発明における「漏れ光」とは、ウエーハの裏面から該ウエーハを構成する基板に対して透過性を有する波長のレーザー光線を照射して該基板の分割予定ラインに沿った内部に改質層を形成するレーザー加工装置において、該照射されたレーザー光線のうち、該ウエーハの内部に設定される集光点近傍に形成される改質層の形成に寄与せずに、該ウエーハの表面側に透過するレーザー光を含み、例えば、改質層の直下であって、該改質層が形成される分割予定ラインに沿った領域に到達するレーザー光、および、該改質層又は改質層の周辺に形成されるクラック等で反射、屈折、散乱して、前記分割予定ラインに沿った領域以外の領域に到達する飛散光を少なくとも含む。 The “leakage light” in the present invention refers to a modified layer in the interior of the substrate along the planned division line by irradiating a laser beam having a wavelength that is transmissive to the substrate constituting the wafer from the back surface of the wafer. In the laser processing apparatus for forming a laser beam, the irradiated laser beam is transmitted to the surface side of the wafer without contributing to the formation of a modified layer formed in the vicinity of the condensing point set inside the wafer. For example, a laser beam that reaches a region immediately below the modified layer and along a planned division line on which the modified layer is formed, and the periphery of the modified layer or the modified layer At least scattered light that is reflected, refracted, and scattered by cracks and the like that reach the region other than the region along the planned dividing line.
上記主たる技術課題を解決するため、本発明によれば、複数のデバイスが分割予定ラインによって区画された表面に形成されたウエーハの裏面から該ウエーハを構成する基板に対して透過性を有する波長のレーザー光線を照射して該基板の分割予定ラインに沿った内部に改質層を形成するレーザー加工装置の、該レーザー光線の漏れ光による影響を検査するための検査用ウエーハであって、検査用基板の表面側に金属箔が積層された検査用ウエーハが提供される。 In order to solve the above-mentioned main technical problem, according to the present invention, a plurality of devices having a wavelength having transparency to the substrate constituting the wafer from the back surface of the wafer formed on the surface partitioned by the division lines. An inspection wafer for inspecting the influence of leakage light of the laser beam of a laser processing apparatus for irradiating a laser beam to form a modified layer inside the substrate along a planned division line, An inspection wafer in which a metal foil is laminated on the surface side is provided.
該検査用基板の表面には、Ｔｉ、またはＣｒからなる下地層を積層し、該下地層に重ねて、Ａｌ、Ｓｎ、Ｐｔ、Ａｕ、Ａｇ、Ｉｎ、Ｐｂ、Ｃｕのうちいずれかの金属箔が積層されることができる。 A base layer made of Ti or Cr is laminated on the surface of the inspection substrate, and a metal foil of any one of Al, Sn, Pt, Au, Ag, In, Pb, and Cu is stacked on the base layer. Can be stacked.
該検査用基板は、Ｓｉ、ＳｉＣ、Ａｌ２Ｏ３、ＧａＮのいずれかで形成されることができる。 The inspection substrate can be formed of any one of Si, SiC, Al 2 O 3 and GaN.
該検査用基板の表面側に積層される金属箔は、ドット状、格子状、短冊状、縞模様状、あるいは全面に形成されるいずれかの形態を含むことができる。 The metal foil laminated on the surface side of the inspection substrate can include a dot shape, a lattice shape, a strip shape, a stripe pattern shape, or any form formed on the entire surface.
該金属箔の表面に酸化防止膜が被覆されることが好ましく、該酸化防止膜は、ＳｉＯ２、ＴｉＯ２、Ｔａ２Ｏ５、ＰＥＴ、のいずれかで形成されることができる。 The surface of the metal foil is preferably covered with an antioxidant film, and the antioxidant film can be formed of any one of SiO 2 , TiO 2 , Ta 2 O 5 , and PET.
また、本発明によれば、該検査用ウエーハの裏面から該検査用基板に対して透過性を有する波長のレーザー光線の集光点を該検査用基板の内部に位置付けて照射して改質層を形成する改質層形成工程と、該検査用ウエーハの表面を観察し、金属箔のダメージを検出するダメージ検出工程と、を含む、検査用ウエーハの使用方法が提供され、レーザー光線の波長、平均出力、繰り返し周波数、パルス幅、集光レンズの開口数、集光点の位置、相対的な加工送り速度、の少なくともいずれかの加工条件を調整する加工条件調整工程が含まれる検査用ウエーハの使用方法が提供される。 Further, according to the present invention, the modified layer is formed by irradiating a condensing point of a laser beam having a wavelength transmissive to the inspection substrate from the back surface of the inspection wafer. There is provided a method for using an inspection wafer, including a modified layer forming step to be formed, and a damage detection step for observing the surface of the inspection wafer and detecting damage to the metal foil. A method for using an inspection wafer, which includes a machining condition adjusting step for adjusting at least one of a machining frequency, a repetition frequency, a pulse width, a numerical aperture of a condenser lens, a position of a condenser point, and a relative machining feed rate Is provided.
本発明において、レーザー光線の漏れ光による影響を検査するための、検査用基板の表面に金属箔が積層された検査用ウエーハ、および該検査用ウエーハの使用方法が提供されることにより、実際に使用する加工条件で該検査用のウエーハの裏面から基板に対してレーザー光線を照射し、表面に形成した金属箔上に生じる溶融ダメージの有無、大きさを確認することにより、改質層の形成に使用されない漏れ光が発生してウエーハの表面に対して機能層を破壊するような影響がある加工条件を容易に把握することができ、さらに、本発明の検査用ウエーハを使用する方法を実行することで、ウエーハ内部に良好に改質層を形成しつつ、デバイスの品質を低下させるような漏れ光が発生しない加工条件に容易に調整することができる、という作用効果を奏する。 In the present invention, an inspection wafer in which a metal foil is laminated on the surface of an inspection substrate for inspecting the influence of leakage light of a laser beam, and a method for using the inspection wafer are provided. Used to form a modified layer by irradiating the substrate with a laser beam from the back side of the inspection wafer under processing conditions and confirming the presence and size of the melt damage that occurs on the metal foil formed on the surface. It is possible to easily grasp the processing conditions that have an effect of destroying the functional layer on the surface of the wafer due to generation of leaked light, and to execute the method using the inspection wafer of the present invention Therefore, it is possible to easily adjust the processing conditions so as not to generate leaked light that deteriorates the quality of the device while forming a modified layer inside the wafer. An effect.
図１には、本発明により提供される検査用ウエーハの使用方法が実行可能なレーザー加工装置の斜視図が示されている。図１に示すレーザー加工装置１は、静止基台２と、該静止基台２に矢印Ｘで示すＸ軸方向（加工送り方向）に移動可能に配設され被加工物を保持するための保持テーブル機構３と、静止基台２上に配設されたレーザー光線照射手段としてのレーザー光線照射ユニット４とを備えている。 FIG. 1 is a perspective view of a laser processing apparatus capable of executing the method of using an inspection wafer provided by the present invention. A laser processing apparatus 1 shown in FIG. 1 is provided with a stationary base 2 and a holder for holding a workpiece that is disposed on the stationary base 2 so as to be movable in the X-axis direction (machining feed direction) indicated by an arrow X. A table mechanism 3 and a laser beam irradiation unit 4 as a laser beam irradiation means disposed on the stationary base 2 are provided.
上記保持テーブル機構３は、静止基台２上にＸ軸方向に沿って平行に配設された一対の案内レール３１、３１と、該案内レール３１、３１上にＸ軸方向に移動可能に配設された第１の滑動ブロック３２と、該第１の滑動ブロック３２上にＸ軸方向と直交する矢印Ｙで示すＹ軸方向（割り出し送り方向）に移動可能に配設された第２の滑動ブロック３３と、該第２滑動ブロック３３上に円筒形状からなり内部にパルスモータを備えることにより回転可能に構成された保持テーブル３４とを備え、保持テーブル３４上には、チャックテーブル３７が備えられている。図１に示されたレーザー加工装置では、該チャックテーブル３７上に被加工物である表面にデバイスが形成された半導体ウエーハ、あるいは本発明により形成される検査用ウエーハ１０が載置される。 The holding table mechanism 3 is arranged on a stationary base 2 in parallel with a pair of guide rails 31, 31 arranged along the X-axis direction, and on the guide rails 31, 31 so as to be movable in the X-axis direction. A first slide block 32 provided, and a second slide arranged on the first slide block 32 so as to be movable in the Y-axis direction (index feed direction) indicated by an arrow Y orthogonal to the X-axis direction. A block 33 and a holding table 34 having a cylindrical shape on the second sliding block 33 and configured to be rotatable by providing a pulse motor therein are provided. A chuck table 37 is provided on the holding table 34. ing. In the laser processing apparatus shown in FIG. 1, a semiconductor wafer in which a device is formed on the surface to be processed, or an inspection wafer 10 formed according to the present invention is placed on the chuck table 37.
上記第１の滑動ブロック３２は、下面に上記一対の案内レール３１、３１と嵌合する一対の被案内溝３２１、３２１が設けられているとともに、上面にＹ軸方向に沿って平行に形成された一対の案内レール３２２、３２２が設けられている。このように構成された第１の滑動ブロック３２は、被案内溝３２１、３２１が一対の案内レール３１、３１に嵌合することにより、一対の案内レール３１、３１に沿ってＸ軸方向に移動可能に構成される。図示の保持テーブル機構３は、第１の滑動ブロック３２を一対の案内レール３１、３１に沿ってＸ軸方向に加工送りする加工送り手段を構成するＸ軸方向移動手段３５を備えている。Ｘ軸方向移動手段３５は、上記一対の案内レール３１と３１との間に平行に配設された雄ネジロッド３５１と、該雄ネジロッド３５１を回転駆動させるためのパルスモータ３５２等の駆動源を含んでいる。雄ネジロッド３５１は、その一端が上記静止基台２に固定された軸受ブロック３５３に回転自在に支持されており、その他端が上記パルスモータ３５２の出力軸に伝動連結されている。なお、雄ネジロッド３５１は、第１の滑動ブロック３２の中央部下面に突出して設けられた図示しない雌ネジブロックに形成された貫通雌ネジ穴に螺合されている。従って、パルスモータ３５２によって雄ネジロッド３５１を正転および逆転駆動することにより、第１の滑動ブロック３２は案内レール３１、３１に沿ってＸ軸方向に移動させられる。 The first sliding block 32 is provided with a pair of guided grooves 321 and 321 fitted to the pair of guide rails 31 and 31 on the lower surface, and is formed on the upper surface in parallel along the Y-axis direction. A pair of guide rails 322 and 322 are provided. The first sliding block 32 configured in this manner moves in the X-axis direction along the pair of guide rails 31, 31 when the guided grooves 321, 321 are fitted into the pair of guide rails 31, 31. Configured to be possible. The illustrated holding table mechanism 3 includes an X-axis direction moving means 35 that constitutes a processing feed means for processing and feeding the first sliding block 32 along the pair of guide rails 31 and 31 in the X-axis direction. The X-axis direction moving means 35 includes a male screw rod 351 disposed in parallel between the pair of guide rails 31 and 31, and a drive source such as a pulse motor 352 for rotationally driving the male screw rod 351. It is out. One end of the male screw rod 351 is rotatably supported by a bearing block 353 fixed to the stationary base 2, and the other end is connected to the output shaft of the pulse motor 352 by transmission. The male screw rod 351 is screwed into a penetrating female screw hole formed in a female screw block (not shown) provided on the lower surface of the central portion of the first sliding block 32. Therefore, when the male screw rod 351 is driven to rotate forward and backward by the pulse motor 352, the first sliding block 32 is moved along the guide rails 31 and 31 in the X-axis direction.
上記第２の滑動ブロック３３は、下面に上記第１の滑動ブロック３２の上面に設けられた一対の案内レール３２２、３２２と嵌合する一対の被案内溝３３１、３３１が設けられており、この被案内溝３３１、３３１を一対の案内レール３２２、３２２に嵌合することにより、上記Ｘ軸と直交するＹ軸方向に移動可能に構成されている。図示の保持テーブル機構３は、第２の滑動ブロック３３を第１に滑動ブロック３２に設けられた一対の案内レール３２２、３２２に沿って移動させるための割り出し送り手段を構成するＹ軸方向移動手段３６を備えている。Ｙ軸方向移動手段３６は、上記一対の案内レール３２２、３２２との間に平行に配設された雄ネジロッド３６１と、該雄ネジロッド３６１を回転駆動するためのパルスモータ３６２等の駆動源を含んでいる。雄ネジロッド３６１は、一端が上記第１の滑動ブロック３２の上面に固定された軸受けブロック３６３に回転自在に支持されており、他端が上記パルスモータ３６２の出力軸に伝動連結されている。なお、雄ネジロッド３６１は、第２の滑動ブロック３３の中央下面に突出して設けられた図示しない雌ネジブロックに形成された貫通雌ネジ穴に螺合された雄ネジロッド３６１を正転及び逆転させることにより、第２の滑動ブロック３３は案内レール３２２、３２２に沿ってＹ軸方向に移動させられる。 The second sliding block 33 is provided with a pair of guided grooves 331 and 331 which are fitted to a pair of guide rails 322 and 322 provided on the upper surface of the first sliding block 32 on the lower surface. By fitting the guided grooves 331 and 331 to a pair of guide rails 322 and 322, the guide grooves 331 and 331 are configured to be movable in the Y-axis direction orthogonal to the X-axis. The illustrated holding table mechanism 3 includes a Y-axis direction moving means that constitutes an index feeding means for moving the second sliding block 33 along a pair of guide rails 322 and 322 provided in the sliding block 32 first. 36. The Y-axis direction moving means 36 includes a male screw rod 361 disposed in parallel between the pair of guide rails 322 and 322, and a drive source such as a pulse motor 362 for rotationally driving the male screw rod 361. It is out. One end of the male screw rod 361 is rotatably supported by a bearing block 363 fixed to the upper surface of the first sliding block 32, and the other end is connected to the output shaft of the pulse motor 362. The male screw rod 361 rotates the male screw rod 361 forwardly and reversely, which is screwed into a through female screw hole formed in a female screw block (not shown) that protrudes from the center lower surface of the second sliding block 33. Thus, the second sliding block 33 is moved along the guide rails 322 and 322 in the Y-axis direction.
上記第１の滑動ブロック、第２の滑動ブロックは、それぞれ図示しないＸ軸方向位置を検出するＸ軸方向位置検出手段、Ｙ軸方向位置を検出するＹ軸方向位置検出手段を備えており、後述する制御手段により、検出された各第１、第２の滑動ブロックの位置に基づいて、上記各駆動源に対して駆動信号を発信し、所望の位置に保持テーブル３４を制御することが可能となっている。 Each of the first sliding block and the second sliding block includes an X-axis direction position detection unit that detects an X-axis direction position and a Y-axis direction position detection unit that detects a Y-axis direction position, which are not shown. Based on the detected positions of the first and second sliding blocks, it is possible to transmit a driving signal to each of the driving sources and control the holding table 34 to a desired position. It has become.
上記レーザー光線ユニット４は、上記静止基台２上に配設された支持部材４１と、該支持部材４１によって支持された実質上水平に延出するケーシング４２と、該ケーシング４２に配設されたレーザー光線照射手段５と、該ケーシング４２の前端部に配設されレーザー加工すべき加工領域を検出する撮像手段６を備えている。なお、撮像手段６は、被加工物を照明する照明手段と、該照明手段によって照明された領域を捕える光学系と、該光学系によって捕えられた像を撮像する撮像素子（ＣＣＤ）等を備え、撮像した画像信号を図示しない制御手段に送る。 The laser beam unit 4 includes a support member 41 disposed on the stationary base 2, a substantially horizontally extending casing 42 supported by the support member 41, and a laser beam disposed on the casing 42. Irradiation means 5 and imaging means 6 that is disposed at the front end portion of the casing 42 and detects a processing region to be laser processed are provided. The imaging unit 6 includes an illuminating unit that illuminates the workpiece, an optical system that captures an area illuminated by the illuminating unit, and an imaging device (CCD) that captures an image captured by the optical system. Then, the captured image signal is sent to a control means (not shown).
上記レーザー光線照射手段５は、ケーシング４２内部に収納されたパルスレーザー光線発振手段から発振されたレーザー光線を集光し、チャックテーブル３７上に保持された被加工物に照射する集光器を備えている。図示は省略するが、ケーシング４２内のパルスレーザー光線発振手段は、パルスレーザー光線の出力調整手段、パルスレーザー光線発振器、これに付設された繰り返し周波数設定手段等から構成され、該パルスレーザー光線の集光点位置を、保持テーブルの上面である保持面に対して垂直な方向に調整可能なように制御される。 The laser beam irradiating means 5 is provided with a condenser for condensing the laser beam oscillated from the pulsed laser beam oscillating means housed in the casing 42 and irradiating the workpiece held on the chuck table 37. Although not shown, the pulse laser beam oscillating means in the casing 42 is composed of a pulse laser beam output adjusting means, a pulse laser beam oscillator, a repetition frequency setting means attached thereto, and the like. The holding table is controlled so that it can be adjusted in a direction perpendicular to the holding surface.
図示のレーザー加工装置１は、図示しない制御手段を備えている。該制御手段は、コンピュータにより構成されており、制御プログラムに従って演算処理する中央処理装置と、制御プログラムを格納するリードオンリメモリ（ＲＯＭ）と、演算結果等を格納する読み書き可能なランダムアクセスメモリ（ＲＡＭ）と、入力、出力インターフェースとを備えている。該制御手段の入力インターフェースには、上記したＸ軸方向位置検出手段、Ｙ軸方向位置検出手段、撮像手段６等からの検出信号が入力され、出力インターフェースからは、上記Ｘ軸方向移動手段、Ｙ軸方向移動手段、パルスレーザー光線の集光点位置制御手段、パルスレーザー光線の出力制御手段等に制御信号を出力する。 The illustrated laser processing apparatus 1 includes control means (not shown). The control means is constituted by a computer, and includes a central processing unit that performs arithmetic processing according to a control program, a read-only memory (ROM) that stores a control program, and a readable / writable random access memory (RAM) that stores arithmetic results and the like. ) And an input / output interface. Detection signals from the X-axis direction position detection means, the Y-axis direction position detection means, the imaging means 6 and the like are input to the input interface of the control means, and the X-axis direction movement means, Y, and the like are input from the output interface. A control signal is output to the axial direction moving means, the focused point position control means for the pulse laser beam, the output control means for the pulse laser beam, and the like.
そして、当該レーザー加工装置では、複数のデバイスが分割予定ラインによって区画されて表面に形成されたウエーハの裏面から、該制御手段に予め記憶された分割予定ラインに従ってレーザー光線を照射してウエーハ上の複数のデバイスを個々に分割するための改質層を形成すべく、レーザー加工時におけるレーザー光線の照射条件、例えば、レーザー光線の波長、平均出力、繰り返し周波数、パルス幅、集光レンズの開口数（ＮＡ）、集光点の位置、レーザー光線照射手段と保持テーブルとの間における相対的な加工送り速度等を自由に設定することが可能になっている。 In the laser processing apparatus, a plurality of devices on the wafer are irradiated by irradiating a laser beam from the back surface of the wafer formed on the surface by dividing the plurality of devices in accordance with the division lines stored in advance in the control means. In order to form a modified layer to divide each device, the laser beam irradiation conditions during laser processing, such as the wavelength of the laser beam, the average output, the repetition frequency, the pulse width, the numerical aperture (NA) of the condenser lens The position of the condensing point, the relative processing feed speed between the laser beam irradiation means and the holding table can be freely set.
ここで、上記したレーザー加工装置において使用されるレーザー光線の照射条件、あるいは加工送り速度等の加工条件は、使用する半導体ウエーハの素材や、厚み、あるいは表面に形成されるデバイスとデバイスとの間の分割予定ラインの幅等と、過去の加工実績において使用してきた加工条件等を考慮して設定される。しかし、改質層をより確実に形成することが可能になるレーザー加工条件は、他方で、漏れ光の影響により分割後のデバイスの品質を低下させる加工条件となり得るため、新しいウエーハを使用する場合や新たな加工条件を採用するに当たり、採用しようとしている加工条件がデバイスの品質を低下させるような加工条件であるか否かを検証したうえで加工条件の調整を行う必要がある。そこで、本発明により提供される、レーザー加工装置における加工条件の適否を検査するのに好適な検査用ウエーハ、および当該検査用ウエーハの使用方法について、以下に詳細に説明する。 Here, the irradiation conditions of the laser beam used in the laser processing apparatus described above, or the processing conditions such as the processing feed rate, are the material and thickness of the semiconductor wafer to be used, or between the devices formed on the surface. It is set in consideration of the width of the planned division line and the machining conditions used in the past machining results. However, the laser processing conditions that allow the modified layer to be formed more reliably, on the other hand, can be processing conditions that degrade the quality of the device after splitting due to the influence of leakage light, so when using a new wafer In adopting new processing conditions, it is necessary to adjust the processing conditions after verifying whether or not the processing conditions to be employed are processing conditions that reduce the quality of the device. Accordingly, an inspection wafer suitable for inspecting the suitability of processing conditions in a laser processing apparatus provided by the present invention and a method of using the inspection wafer will be described in detail below.
図２（ａ）には、本発明により提供される検査用ウエーハＷを構成する表面１０ａ、裏面１０ｂからなる検査用基板１０が示されている。当該検査用基板１０は種々の材料を選択することが可能であるが、想定される被加工物となるウエーハと同一の材料を選択して構成すべきであり、例えば、検証しようとしているウエーハの基板がＳｉであるならば、同一のＳｉが選択され、検査用基板１０の厚み等も検証しようとするウエーハと同一に調整される。検査用基板１０として採用される材質としては、上記Ｓｉの他に、ＳｉＣ、Ａｌ２Ｏ３、ＧａＮ等が想定される。 FIG. 2A shows an inspection substrate 10 composed of a front surface 10a and a back surface 10b constituting the inspection wafer W provided by the present invention. The inspection substrate 10 can be selected from various materials, but should be configured by selecting the same material as that of the wafer that is supposed to be processed, for example, the wafer to be verified. If the substrate is Si, the same Si is selected, and the thickness of the inspection substrate 10 is adjusted to be the same as that of the wafer to be verified. In addition to the above Si, SiC, Al 2 O 3 , GaN or the like is assumed as a material adopted as the inspection substrate 10.
図２（ｂ）に示すように、検査用基板１０の表面全面に下地層１１を蒸着により形成する。当該下地層の素材としては、代表的にはＴｉ、Ｃｒを選択することができる。また、蒸着手段としては、周知のイオンプレーティングを選択することができるが、スパッタリングなど公知の他の方法も選択できる。なお、当該下地層１１は、後述する漏れ光による影響を検証するために必要な金属箔を、該検査用基板１０に良好に蒸着させるために設けられるためのものであり、該検査用基板１０に直接金属箔層を形成可能であれば省略することも可能である。このような下地層１１の厚さは５０ｎｍ〜５００ｎｍの範囲で適宜選択されることが好ましい。 As shown in FIG. 2B, a base layer 11 is formed on the entire surface of the inspection substrate 10 by vapor deposition. Typically, Ti or Cr can be selected as the material for the underlayer. As the vapor deposition means, a known ion plating can be selected, but other known methods such as sputtering can also be selected. The underlayer 11 is provided for satisfactorily depositing a metal foil necessary for verifying the influence of leakage light, which will be described later, on the inspection substrate 10. If the metal foil layer can be directly formed, it can be omitted. The thickness of the underlayer 11 is preferably selected as appropriate in the range of 50 nm to 500 nm.
図２（ｃ）に示すように、前記下地層１１上の全面に金属箔１２としてＳｎを蒸着させる（図３（ａ）も参照）。なお、当該金属箔１２の素材としては、該Ｓｎの他に、Ａｌ、Ｐｔ、Ａｕ、Ａｇ、Ｉｎ、Ｐｂ、Ｃｕ等を選択することができる。また、該金属箔１２の厚さも下地層１１と同様に５０ｎｍ〜５００ｎｍの範囲で適宜選択されることが好ましい。なお、当該金属箔に使用される材料は、想定している実際の被加工物となるウエーハに形成された半導体デバイスに使用されている配線層に使用されている金属の融点を考慮して決定する。すなわち、当該金属箔１２が、検証しようとしている半導体ウエーハのデバイスの代替となるのであり、実際にデバイスが形成される必要がない。 As shown in FIG. 2C, Sn is deposited as a metal foil 12 on the entire surface of the base layer 11 (see also FIG. 3A). As the material of the metal foil 12, in addition to Sn, Al, Pt, Au, Ag, In, Pb, Cu, or the like can be selected. Moreover, it is preferable that the thickness of the metal foil 12 is appropriately selected within the range of 50 nm to 500 nm as in the case of the base layer 11. The material used for the metal foil is determined in consideration of the melting point of the metal used in the wiring layer used in the semiconductor device formed on the wafer that is the actual workpiece to be assumed. To do. That is, the metal foil 12 is an alternative to the semiconductor wafer device to be verified, and it is not necessary to actually form the device.
例えば、一般的な半導体デバイスの配線層の素材として多く採用されている配線はＡｌであり、当該Ａｌの融点は約６６０℃であるから、当該Ａｌ配線が採用されたウエーハの配線部分の損傷を検証するのであれば、Ａｌの融点と同等、あるいはそれよりも低い融点である金属を採用するのが好ましく、上記実施例では融点が２２０℃であるＳｎが採用されており、２２０℃以上の熱負荷がかかった場合に、当該金属箔１２上に溶融変化が起こり、検証時のレーザー加工条件によりデバイスに損傷を受ける可能性があるか否かを判定することができるのである。その点について、さらに詳細に説明する。 For example, a wiring that is often used as a material for a wiring layer of a general semiconductor device is Al, and the melting point of the Al is about 660 ° C. Therefore, the wiring portion of a wafer in which the Al wiring is used is damaged. For verification, it is preferable to use a metal having a melting point equal to or lower than the melting point of Al. In the above examples, Sn having a melting point of 220 ° C. is used, and a heat of 220 ° C. or higher. When a load is applied, it is possible to determine whether or not a melting change occurs on the metal foil 12 and the device may be damaged depending on the laser processing conditions at the time of verification. This point will be described in more detail.
図４（ａ）に示すように、検査用ウエーハＷに対し、図１に示したレーザー加工装置１により、想定している半導体ウエーハと同様のレーザー加工条件にて改質層を形成する（改質層形成工程）。より具体的には、レーザー光線照射手段５によりレーザー光線を照射しながら、検査用ウエーハＷが載置されたチャックテーブル３７を備えた保持テーブル３４をＸ軸方向へ移動させる加工送り手段と、分割予定ラインの幅間隔でＹ軸方向へ移動させる割り出し送り手段とにより、Ｘ軸方向の分割予定ラインに沿った複数の改質層の形成を検査用ウエーハの一端から他端まで実行する。改質層の形成を検査用ウエーハの一端から他端まで実行した後、保持テーブル３４を９０度回転し、既に形成した分割予定ラインに沿った改質層に直交する方向の改質層を上記と同様の手順に従い形成する。 As shown in FIG. 4A, a modified layer is formed on the inspection wafer W by the laser processing apparatus 1 shown in FIG. 1 under the same laser processing conditions as the assumed semiconductor wafer (modified). Quality layer forming step). More specifically, a processing feed means for moving the holding table 34 including the chuck table 37 on which the inspection wafer W is placed while irradiating the laser beam by the laser beam irradiating means 5 in the X-axis direction; A plurality of modified layers are formed from one end to the other end of the inspection wafer along the planned dividing line in the X-axis direction by the indexing feeding means that moves in the Y-axis direction at intervals of the width of. After the formation of the modified layer is performed from one end of the inspection wafer to the other end, the holding table 34 is rotated by 90 degrees, and the modified layer in the direction perpendicular to the modified layer along the already scheduled division line is According to the same procedure as above.
なお、上記改質層形成工程における加工条件は、例えば、次のように設定されている。
レーザー光線の波長 ：１０６４ｎｍ
繰り返し周波数 ：５０ｋＨｚ
パルス幅 ：１０ｐｓ
平均出力 ：０．５Ｗ
スポット径 ：φ１μｍ
集光レンズの開口数（ＮＡ） ：０．８５
加工送り速度 ：１００ｎｍ／秒
The processing conditions in the modified layer forming step are set as follows, for example.
Laser beam wavelength: 1064 nm
Repetition frequency: 50 kHz
Pulse width: 10 ps
Average output: 0.5W
Spot diameter: φ1μm
Numerical aperture (NA) of condenser lens: 0.85
Processing feed rate: 100 nm / second
当該改質層を形成する際における漏れ光の影響について図４（ｂ）に基づき説明する。
図に示すように、レーザー光線照射手段５により照射されたレーザー光線は検査用ウエーハの基板の内部にその集光点が設定されており、集光点近傍に改質層が形成される。この際、必ずしもレーザー光線のエネルギーすべてが改質層を形成するとは限らず、その一部がチャックテーブル３７上で下面に位置付けられる表面側の集光点直下の領域に漏れ光として到達する場合があり（図中Ｄ１を参照）、この漏れ光として表面側に到達したレーザー光線の条件によっては、該表面側部分において吸収され発熱の原因となる。そして、当該発熱量が大きい場合は、検査用ウエーハの金属箔１２の該レーザー光線の漏れ光が到達した部位が溶融することになる。この時に溶融する温度条件は、金属箔１２を構成する金属の種類、模様、厚さに応じて変化する。
The influence of leakage light when forming the modified layer will be described with reference to FIG.
As shown in the figure, the condensing point of the laser beam irradiated by the laser beam irradiating means 5 is set inside the substrate of the inspection wafer, and a modified layer is formed in the vicinity of the condensing point. At this time, not all of the energy of the laser beam necessarily forms the modified layer, and a part of the energy may reach the area immediately below the condensing point on the surface side positioned on the lower surface on the chuck table 37 as leakage light. (Refer to D1 in the figure) Depending on the conditions of the laser beam that has reached the surface side as this leaked light, it is absorbed at the surface side portion and causes heat generation. And when the said emitted-heat amount is large, the site | part which the leaked light of the said laser beam reached | attained on the metal foil 12 of the wafer for a test | inspection will fuse | melt. The temperature conditions for melting at this time vary depending on the type, pattern and thickness of the metal constituting the metal foil 12.
また、加工送り方向と直交する方向にすでに改質層が形成されている場合（図４（ｂ）中のＰ点を参照）、加工送り手段により照射されたレーザー光線がすでに形成された改質層Ｐを横切る際に、該改質層Ｐが形成される際に発生した基板内部のクラック、あるいは該改質層Ｐそのものに反射し（あるいは屈折、散乱し）、反射したレーザー光線が予期しない方向に飛散光として透過し表面側に到達する場合がある（図中Ｄ２を参照）。そして、上記Ｄ１と同様に、飛散光として表面側に到達したレーザー光線の条件によっては、該表面側部分において吸収され発熱の原因となり、当該発熱量が大きい場合は、検査用ウエーハの金属箔１２の該レーザー光線の飛散光が到達した部位が溶融することになるのである。 Further, when the modified layer is already formed in the direction orthogonal to the processing feed direction (see point P in FIG. 4B), the modified layer on which the laser beam irradiated by the processing feed means has already been formed. When crossing P, a crack in the substrate generated when the modified layer P is formed, or reflected (or refracted or scattered) in the modified layer P itself, and the reflected laser beam is in an unexpected direction. In some cases, the light is transmitted as scattered light and reaches the surface side (see D2 in the figure). As in the case of D1, depending on the condition of the laser beam that has reached the surface as scattered light, it is absorbed in the surface side portion and causes heat generation. When the amount of heat generation is large, the metal foil 12 of the inspection wafer The part where the scattered light of the laser beam reaches melts.
上記した手順により、改質層形成工程が完了した後、検査用ウエーハＷをチャックテーブル３７から取り出し、金属箔１２が蒸着された面に生じた溶融箇所、すなわちダメージの発生を観察する（ダメージ検出工程）。 After the modified layer forming step is completed by the above-described procedure, the inspection wafer W is taken out from the chuck table 37, and a melted portion generated on the surface on which the metal foil 12 is deposited, that is, occurrence of damage is observed (damage detection). Process).
図５に示すように、レーザー加工を施した後の検査用ウエーハＷの金属箔１２が形成された面を観察することにより、上記レーザー加工によって生じた溶融ダメージＤ１、Ｄ２の発生を確認することができる。図５のＢ部拡大図に示すように、集光点の直下に透過した漏れ光により発生する溶融ダメージＤ１は、基本的に分割予定ラインに沿って生じるため、その大きさが、分割予定ラインの幅に収まっているか否かを判定する。もし、分割予定ラインよりも大きい溶融ダメージとなっていれば、それはデバイスの損傷を生じさせる恐れがあるということがいえる。なお、図５の検査用ウエーハの全体図では、分割予定ラインに沿って発生する溶融ダメージＤ１については省略している。 As shown in FIG. 5, by confirming the surface of the inspection wafer W on which the metal foil 12 is formed after the laser processing is performed, the occurrence of the melt damage D1 and D2 caused by the laser processing is confirmed. Can do. As shown in the enlarged view of part B of FIG. 5, the melt damage D1 generated by the leaked light transmitted directly below the condensing point basically occurs along the planned division line, and therefore the size thereof is the division planned line. It is determined whether or not it is within the range of. If the melt damage is larger than the line to be divided, it can be said that it may cause damage to the device. In the overall view of the inspection wafer shown in FIG. 5, the melting damage D1 that occurs along the planned division line is omitted.
また、改質層、又は改質層近傍のクラック等により反射して飛散した飛散光により発生されられた溶融ダメージＤ２は、実際の被加工物であるデバイスが形成された半導体ウエーハの分割予定ラインの領域を外れ、デバイスが配設される領域に生じる可能性が高い。すなわち、当該飛散光による溶融ダメージの発生が見られる場合は、その大きさに限らず、そのレーザー加工条件により加工した際に、デバイスの損傷が生じる恐れがあることを示していることになる。 Further, the melt damage D2 generated by the scattered light reflected and scattered by the modified layer or cracks in the vicinity of the modified layer is a line to be divided of the semiconductor wafer on which the device that is the actual workpiece is formed. Is likely to occur in the region where the device is disposed. That is, when the occurrence of melting damage due to the scattered light is observed, this indicates that there is a possibility that the device may be damaged when being processed not only according to the size but also under the laser processing conditions.
よって、上記したような検査用ウエーハを用いたレーザー加工を実行し、加工後の検査用ウエーハに生じた漏れ光による溶融ダメージの大きさ、発生頻度を観察することで、当該レーザー加工条件により実際の半導体ウエーハで加工した場合におけるデバイスの損傷の発生する恐れが高いのか否かを容易に予測することが可能となる。そして、当該検証結果に基づき、レーザー加工装置における加工条件、例えば、レーザー光線の波長、平均出力、繰り返し周波数、パルス幅、集光レンズの開口数（ＮＡ）、集光点の位置、相対的な加工送り速度、の少なくともいずれかの加工条件を調整して（加工条件調整工程）、調整されたレーザー加工条件により、再度検査用ウエーハを用いたレーザー加工を実行して検査用ウエーハに看過できない溶融ダメージを発生させずに、良好に個々のデバイスに分割可能な改質層を形成するレーザー加工条件を見出すことができる。 Therefore, by executing laser processing using the inspection wafer as described above, and observing the magnitude and frequency of melt damage due to leaked light generated on the inspection wafer after processing, the actual processing depends on the laser processing conditions. It is possible to easily predict whether or not there is a high possibility of damage to the device when processed with this semiconductor wafer. Based on the verification result, the processing conditions in the laser processing apparatus, such as the wavelength of the laser beam, the average output, the repetition frequency, the pulse width, the numerical aperture (NA) of the condensing lens, the position of the condensing point, and relative processing Melting damage that cannot be overlooked in the inspection wafer by performing laser processing using the inspection wafer again according to the adjusted laser processing conditions by adjusting at least one of the processing conditions of the feed rate (processing condition adjustment process) Thus, it is possible to find a laser processing condition for forming a modified layer that can be divided into individual devices without causing the occurrence of the problem.
上記した実施形態では、本発明の検査用ウエーハの金属箔１２について、下地層１１上の全面に形成した場合を提示したが、これに限らず、例えば、図２のＡ部拡大図として示す図３の（ｂ）ドット状、（ｃ）格子状、（ｄ）短冊状、（ｅ）縞模様状、等のような、規則的に金属箔が形成されない隙間を有するパターンを形成することができる。全面を金属箔とした場合は、漏れ光により表面側の温度が部分的に上昇しても周辺部に熱伝導されることにより、溶融ダメージが形成されにくい虞があるが、このような形態をとることにより、周辺部への熱伝導が抑制され局所的に溶融ダメージが形成されやすくなるという性質を有する。また、上記図３（ａ）のような全面に金属箔１２を形成する領域、（ｂ）〜（ｅ）で示したパターンを形成する領域を、１枚の検査用ウエーハ上に適宜組み合わせて形成することも可能である。なお、図３（ｂ）〜（ｅ）のような金属箔のパターンを形成する手法としては、周知のフォトマスクとエッチングを組み合わせた方法により容易に実現することが可能である。 In the above-described embodiment, the case where the metal foil 12 of the inspection wafer according to the present invention is formed on the entire surface of the base layer 11 is presented. 3 (b) dot-like, (c) lattice-like, (d) strip-like, (e) striped-like, etc., a pattern having gaps where a metal foil is not regularly formed can be formed. . When the entire surface is made of metal foil, even if the temperature on the surface side partially rises due to leakage light, it may be difficult to form melt damage due to heat conduction to the peripheral part. As a result, heat conduction to the peripheral portion is suppressed, and melt damage is easily formed locally. Further, a region for forming the metal foil 12 on the entire surface as shown in FIG. 3A and a region for forming the patterns shown in FIGS. 3B to 3E are appropriately combined on one inspection wafer. It is also possible to do. In addition, as a method of forming a metal foil pattern as shown in FIGS. 3B to 3E, it can be easily realized by a method combining a well-known photomask and etching.
また、上記したように、検査用ウエーハＷの金属箔１２における熱伝導状態により溶融ダメージの形成条件が変化することから、金属箔１２の厚みが薄いほど溶融ダメージが形成されやすく、厚いほど溶融ダメージが形成されにくくなる。よって、想定する半導体ウエーハに応じた検査用ウエーハに求められる条件（デバイスにおける許容限界温度）によって、金属箔１２の材質を考慮しながら、金属箔１２の厚さを選定すればよい。 In addition, as described above, the melt damage formation conditions vary depending on the heat conduction state of the metal foil 12 of the inspection wafer W. Therefore, the thinner the metal foil 12, the easier the melt damage is formed, and the thicker the melt damage. Is difficult to form. Therefore, the thickness of the metal foil 12 may be selected in consideration of the material of the metal foil 12 according to the conditions (allowable limit temperature in the device) required for the inspection wafer corresponding to the assumed semiconductor wafer.
さらに、本発明の検査用ウエーハの金属箔１２の表面に対し、酸化防止膜を形成することができる。酸化防止膜としては、ＳｉＯ２、ＴｉＯ２、Ｔａ２Ｏ５、ＰＥＴ等が挙げられる。当該酸化防止膜が付与されることにより、検査用ウエーハが制作されてから長期間経過することがあっても、積層された金属箔１２の無用な酸化を防止することができる。 Furthermore, an antioxidant film can be formed on the surface of the metal foil 12 of the inspection wafer of the present invention. As the antioxidant film, SiO 2, TiO 2, Ta 2 O 5, PET , and the like. By providing the antioxidant film, useless oxidation of the laminated metal foil 12 can be prevented even if a long period of time has passed since the inspection wafer was produced.
１：レーザー加工装置
２：静止基台
３：保持テーブル機構
４：レーザー光線照射ユニット
５：レーザー光線照射手段
６：撮像手段
１０：検査用基板
１１：下地層
１２：金属箔
３４：保持テーブル
３５：Ｘ軸方向移動手段（加工送り手段）
３６：Ｙ軸方向移動手段（割り出し送り手段）
３７：チャックテーブル
Ｗ：検査用ウエーハ
1: Laser processing device 2: Stationary base 3: Holding table mechanism 4: Laser beam irradiation unit 5: Laser beam irradiation unit 6: Imaging unit 10: Substrate for inspection 11: Underlayer 12: Metal foil 34: Holding table 35: X axis Direction moving means (processing feed means)
36: Y-axis direction moving means (index feed means)
37: Chuck table W: Wafer for inspection
Claims (8)
検査用基板の表面側に金属箔が積層された検査用ウエーハ。 A plurality of devices are irradiated with a laser beam having a wavelength that is transmissive to the substrate constituting the wafer from the back surface of the wafer formed on the surface partitioned by the division line, and the inside of the substrate along the division line An inspection wafer for inspecting the influence of the leakage light of the laser beam of the laser processing apparatus for forming a modified layer on the substrate,
An inspection wafer in which a metal foil is laminated on the surface side of an inspection substrate.
該検査用ウエーハの裏面から該検査用基板に対して透過性を有する波長のレーザー光線の集光点を該検査用基板の内部に位置付けて照射して改質層を形成する改質層形成工程と、
改質層が形成された該検査用ウエーハの表面を観察し、金属箔のダメージを検出するダメージ検出工程と、を少なくとも含む、検査用ウエーハの使用方法。 A method of using the inspection wafer according to any one of claims 1 to 6,
A modified layer forming step of forming a modified layer by irradiating a condensing point of a laser beam having a wavelength transmissive to the inspection substrate from the back surface of the inspection wafer and irradiating the condensing point inside the inspection substrate; ,
A method for using the inspection wafer, comprising at least a damage detection step of observing the surface of the inspection wafer on which the modified layer is formed and detecting damage to the metal foil.
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| TW105121237A TW201714696A (en) | 2015-08-07 | 2016-07-05 | Test wafer and using method therefor |
| SG10201605928TA SG10201605928TA (en) | 2015-08-07 | 2016-07-19 | Test wafer and using method therefor |
| KR1020160095542A KR20170017728A (en) | 2015-08-07 | 2016-07-27 | Wafer for inspection, and method of using wafer for inspection |
| US15/220,886 US10249547B2 (en) | 2015-08-07 | 2016-07-27 | Method for using a test wafer by forming modified layer using a laser beam and observing damage after forming modified layer |
| CN201610635971.2A CN106449597A (en) | 2015-08-07 | 2016-08-05 | Test wafer and using method therefor |
| DE102016214566.5A DE102016214566A1 (en) | 2015-08-07 | 2016-08-05 | TESTER WAFER AND USE METHOD THEREFOR |
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|---|---|---|---|---|
| WO2017117257A1 (en) * | 2015-12-28 | 2017-07-06 | Celadon Systems, Inc. | Modular rail systems, rail systems, mechanisms, and equipment for devices under test |
| CN107335910B (en) * | 2017-07-18 | 2023-05-16 | 深圳市新迪精密科技有限公司 | Arm type laser machine |
| JP7112204B2 (en) * | 2018-02-07 | 2022-08-03 | 株式会社ディスコ | Nondestructive detection method |
| JP7256604B2 (en) * | 2018-03-16 | 2023-04-12 | 株式会社ディスコ | Nondestructive detection method |
| KR102637162B1 (en) * | 2018-06-12 | 2024-02-16 | 도쿄엘렉트론가부시키가이샤 | Substrate processing method, reforming device and substrate processing system |
| CN111659989A (en) * | 2020-05-25 | 2020-09-15 | 中山大学 | Method for preparing titanium steel composite plate through cladding |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02101583A (en) * | 1988-10-11 | 1990-04-13 | Hitachi Ltd | Pattern inspection method for semiconductor device |
| JP2006068816A (en) * | 2004-08-06 | 2006-03-16 | Hamamatsu Photonics Kk | Laser machining method and semiconductor device |
| JP2010192867A (en) * | 2009-01-20 | 2010-09-02 | Renesas Electronics Corp | Semiconductor integrated circuit device and semiconductor integrated circuit device manufacturing method |
| JP2012059989A (en) * | 2010-09-10 | 2012-03-22 | Disco Abrasive Syst Ltd | Dividing method |
| JP2013128088A (en) * | 2011-11-18 | 2013-06-27 | Hamamatsu Photonics Kk | Laser processing method and laser processing device |
| JP2014033116A (en) * | 2012-08-03 | 2014-02-20 | Disco Abrasive Syst Ltd | Processing method of wafer |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3408805B2 (en) | 2000-09-13 | 2003-05-19 | 浜松ホトニクス株式会社 | Cutting origin region forming method and workpiece cutting method |
| JP2005177763A (en) * | 2003-12-16 | 2005-07-07 | Disco Abrasive Syst Ltd | Verifying apparatus for affected layer machined by laser beam |
| DE102009050711A1 (en) * | 2009-10-26 | 2011-05-05 | Schott Ag | Method and device for detecting cracks in semiconductor substrates |
| CN102648405B (en) * | 2009-11-20 | 2015-04-15 | 独立行政法人产业技术综合研究所 | Method and device of examining defects, wafer and semiconductor element |
| JP5370262B2 (en) * | 2010-05-18 | 2013-12-18 | 豊田合成株式会社 | Semiconductor light emitting chip and substrate processing method |
| JP5766530B2 (en) * | 2011-07-13 | 2015-08-19 | 株式会社ディスコ | Processing method of optical device wafer |
| WO2013126927A2 (en) * | 2012-02-26 | 2013-08-29 | Solexel, Inc. | Systems and methods for laser splitting and device layer transfer |
| KR101597749B1 (en) * | 2012-07-27 | 2016-02-25 | 미쓰이금속광업주식회사 | Metal foil and electronic device |
| JP6062315B2 (en) * | 2013-04-24 | 2017-01-18 | 株式会社ディスコ | Wafer processing method |
| JP6246561B2 (en) | 2013-11-01 | 2017-12-13 | 株式会社ディスコ | Laser processing method and laser processing apparatus |
| US9291576B2 (en) * | 2014-07-11 | 2016-03-22 | Intel Corporation | Detection of defect in die |
-
2015
- 2015-08-07 JP JP2015157185A patent/JP2017037912A/en active Pending
-
2016
- 2016-07-05 TW TW105121237A patent/TW201714696A/en unknown
- 2016-07-19 SG SG10201605928TA patent/SG10201605928TA/en unknown
- 2016-07-27 KR KR1020160095542A patent/KR20170017728A/en unknown
- 2016-07-27 US US15/220,886 patent/US10249547B2/en active Active
- 2016-08-05 DE DE102016214566.5A patent/DE102016214566A1/en not_active Withdrawn
- 2016-08-05 CN CN201610635971.2A patent/CN106449597A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02101583A (en) * | 1988-10-11 | 1990-04-13 | Hitachi Ltd | Pattern inspection method for semiconductor device |
| JP2006068816A (en) * | 2004-08-06 | 2006-03-16 | Hamamatsu Photonics Kk | Laser machining method and semiconductor device |
| JP2010192867A (en) * | 2009-01-20 | 2010-09-02 | Renesas Electronics Corp | Semiconductor integrated circuit device and semiconductor integrated circuit device manufacturing method |
| JP2012059989A (en) * | 2010-09-10 | 2012-03-22 | Disco Abrasive Syst Ltd | Dividing method |
| JP2013128088A (en) * | 2011-11-18 | 2013-06-27 | Hamamatsu Photonics Kk | Laser processing method and laser processing device |
| JP2014033116A (en) * | 2012-08-03 | 2014-02-20 | Disco Abrasive Syst Ltd | Processing method of wafer |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019039679A (en) * | 2017-08-22 | 2019-03-14 | 株式会社ディスコ | Wafer for examination and examination method of energy distribution |
| KR20200099075A (en) | 2019-02-13 | 2020-08-21 | 가부시기가이샤 디스코 | Verification method |
| JP2020136662A (en) * | 2019-02-13 | 2020-08-31 | 株式会社ディスコ | Confirmation method |
| JP7417411B2 (en) | 2019-02-13 | 2024-01-18 | 株式会社ディスコ | Confirmation method |
| JP2020136442A (en) * | 2019-02-18 | 2020-08-31 | 東京エレクトロン株式会社 | Laser processing device setting method, laser processing method, laser processing device, thinning system, and substrate processing method |
| JP7221076B2 (en) | 2019-02-18 | 2023-02-13 | 東京エレクトロン株式会社 | LASER PROCESSING APPARATUS SETTING METHOD, LASER PROCESSING METHOD, LASER PROCESSING APPARATUS, THINNING SYSTEM, AND SUBSTRATE PROCESSING METHOD |
| JP2020136468A (en) * | 2019-02-19 | 2020-08-31 | 株式会社東京精密 | Work-piece inspection method, apparatus, and work-piece processing method |
| JP7219400B2 (en) | 2019-02-19 | 2023-02-08 | 株式会社東京精密 | WORK INSPECTION METHOD AND APPARATUS AND WORK MACHINING METHOD |
| JP2020157335A (en) * | 2019-03-26 | 2020-10-01 | 株式会社ディスコ | Inspection base board and inspection method |
| JP7289592B2 (en) | 2019-03-26 | 2023-06-12 | 株式会社ディスコ | Inspection board and inspection method |
| JP7465425B2 (en) | 2020-07-14 | 2024-04-11 | 株式会社東京精密 | Inspection method and apparatus for inspection wafer, and inspection wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| US10249547B2 (en) | 2019-04-02 |
| CN106449597A (en) | 2017-02-22 |
| SG10201605928TA (en) | 2017-03-30 |
| DE102016214566A1 (en) | 2017-02-09 |
| KR20170017728A (en) | 2017-02-15 |
| US20170040235A1 (en) | 2017-02-09 |
| TW201714696A (en) | 2017-05-01 |
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