SG10201605928TA - Test wafer and using method therefor - Google Patents

Test wafer and using method therefor

Info

Publication number
SG10201605928TA
SG10201605928TA SG10201605928TA SG10201605928TA SG10201605928TA SG 10201605928T A SG10201605928T A SG 10201605928TA SG 10201605928T A SG10201605928T A SG 10201605928TA SG 10201605928T A SG10201605928T A SG 10201605928TA SG 10201605928T A SG10201605928T A SG 10201605928TA
Authority
SG
Singapore
Prior art keywords
method therefor
test wafer
wafer
test
therefor
Prior art date
Application number
SG10201605928TA
Inventor
Kobayashi Satoshi
Shimma Yasuhiro
Teranishi Shunsuke
Ogoshi Nobumori
Ueki Atsushi
Sato Yuriko
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201605928TA publication Critical patent/SG10201605928TA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/32Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/57Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/22Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Dicing (AREA)
SG10201605928TA 2015-08-07 2016-07-19 Test wafer and using method therefor SG10201605928TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015157185A JP2017037912A (en) 2015-08-07 2015-08-07 Inspecting wafer, and method for using inspecting wafer

Publications (1)

Publication Number Publication Date
SG10201605928TA true SG10201605928TA (en) 2017-03-30

Family

ID=57853413

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201605928TA SG10201605928TA (en) 2015-08-07 2016-07-19 Test wafer and using method therefor

Country Status (7)

Country Link
US (1) US10249547B2 (en)
JP (1) JP2017037912A (en)
KR (1) KR20170017728A (en)
CN (1) CN106449597A (en)
DE (1) DE102016214566A1 (en)
SG (1) SG10201605928TA (en)
TW (1) TW201714696A (en)

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WO2017117257A1 (en) 2015-12-28 2017-07-06 Celadon Systems, Inc. Modular rail systems, rail systems, mechanisms, and equipment for devices under test
CN107335910B (en) * 2017-07-18 2023-05-16 深圳市新迪精密科技有限公司 Arm type laser machine
JP6955931B2 (en) * 2017-08-22 2021-10-27 株式会社ディスコ Inspection wafer and energy distribution inspection method
JP7112204B2 (en) * 2018-02-07 2022-08-03 株式会社ディスコ Nondestructive detection method
JP7256604B2 (en) * 2018-03-16 2023-04-12 株式会社ディスコ Nondestructive detection method
CN112236842A (en) * 2018-06-12 2021-01-15 东京毅力科创株式会社 Substrate processing method, modifying apparatus, and substrate processing system
JP7417411B2 (en) * 2019-02-13 2024-01-18 株式会社ディスコ Confirmation method
JP7221076B2 (en) * 2019-02-18 2023-02-13 東京エレクトロン株式会社 LASER PROCESSING APPARATUS SETTING METHOD, LASER PROCESSING METHOD, LASER PROCESSING APPARATUS, THINNING SYSTEM, AND SUBSTRATE PROCESSING METHOD
JP7219400B2 (en) * 2019-02-19 2023-02-08 株式会社東京精密 WORK INSPECTION METHOD AND APPARATUS AND WORK MACHINING METHOD
JP7289592B2 (en) * 2019-03-26 2023-06-12 株式会社ディスコ Inspection board and inspection method
CN111659989A (en) * 2020-05-25 2020-09-15 中山大学 Method for preparing titanium steel composite plate through cladding
JP7465425B2 (en) 2020-07-14 2024-04-11 株式会社東京精密 Inspection method and apparatus for inspection wafer, and inspection wafer

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Publication number Priority date Publication date Assignee Title
JPH02101583A (en) * 1988-10-11 1990-04-13 Hitachi Ltd Pattern inspection method for semiconductor device
JP3408805B2 (en) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 Cutting origin region forming method and workpiece cutting method
JP2005177763A (en) * 2003-12-16 2005-07-07 Disco Abrasive Syst Ltd Verifying apparatus for affected layer machined by laser beam
US8604383B2 (en) * 2004-08-06 2013-12-10 Hamamatsu Photonics K.K. Laser processing method
JP2010192867A (en) * 2009-01-20 2010-09-02 Renesas Electronics Corp Semiconductor integrated circuit device and semiconductor integrated circuit device manufacturing method
DE102009050711A1 (en) * 2009-10-26 2011-05-05 Schott Ag Method and device for detecting cracks in semiconductor substrates
US9019498B2 (en) * 2009-11-20 2015-04-28 National Institute Of Advanced Industrial Science And Technology Method for inspecting defects, inspected wafer or semiconductor device manufactured using the same, method for quality control of wafers or semiconductor devices and defect inspecting apparatus
JP5370262B2 (en) * 2010-05-18 2013-12-18 豊田合成株式会社 Semiconductor light emitting chip and substrate processing method
JP5615107B2 (en) * 2010-09-10 2014-10-29 株式会社ディスコ Split method
JP5766530B2 (en) * 2011-07-13 2015-08-19 株式会社ディスコ Processing method of optical device wafer
JP2013126682A (en) * 2011-11-18 2013-06-27 Hamamatsu Photonics Kk Laser beam machining method
WO2013126927A2 (en) * 2012-02-26 2013-08-29 Solexel, Inc. Systems and methods for laser splitting and device layer transfer
WO2014017135A1 (en) * 2012-07-27 2014-01-30 三井金属鉱業株式会社 Metal foil and electronic device
JP5968150B2 (en) * 2012-08-03 2016-08-10 株式会社ディスコ Wafer processing method
JP6062315B2 (en) * 2013-04-24 2017-01-18 株式会社ディスコ Wafer processing method
JP6246561B2 (en) 2013-11-01 2017-12-13 株式会社ディスコ Laser processing method and laser processing apparatus
US9291576B2 (en) * 2014-07-11 2016-03-22 Intel Corporation Detection of defect in die

Also Published As

Publication number Publication date
KR20170017728A (en) 2017-02-15
US20170040235A1 (en) 2017-02-09
JP2017037912A (en) 2017-02-16
DE102016214566A1 (en) 2017-02-09
TW201714696A (en) 2017-05-01
CN106449597A (en) 2017-02-22
US10249547B2 (en) 2019-04-02

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