SG10201605928TA - Test wafer and using method therefor - Google Patents
Test wafer and using method thereforInfo
- Publication number
- SG10201605928TA SG10201605928TA SG10201605928TA SG10201605928TA SG10201605928TA SG 10201605928T A SG10201605928T A SG 10201605928TA SG 10201605928T A SG10201605928T A SG 10201605928TA SG 10201605928T A SG10201605928T A SG 10201605928TA SG 10201605928T A SG10201605928T A SG 10201605928TA
- Authority
- SG
- Singapore
- Prior art keywords
- method therefor
- test wafer
- wafer
- test
- therefor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Dicing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015157185A JP2017037912A (en) | 2015-08-07 | 2015-08-07 | Inspecting wafer, and method for using inspecting wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201605928TA true SG10201605928TA (en) | 2017-03-30 |
Family
ID=57853413
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201605928TA SG10201605928TA (en) | 2015-08-07 | 2016-07-19 | Test wafer and using method therefor |
Country Status (7)
Country | Link |
---|---|
US (1) | US10249547B2 (en) |
JP (1) | JP2017037912A (en) |
KR (1) | KR20170017728A (en) |
CN (1) | CN106449597A (en) |
DE (1) | DE102016214566A1 (en) |
SG (1) | SG10201605928TA (en) |
TW (1) | TW201714696A (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017117257A1 (en) | 2015-12-28 | 2017-07-06 | Celadon Systems, Inc. | Modular rail systems, rail systems, mechanisms, and equipment for devices under test |
CN107335910B (en) * | 2017-07-18 | 2023-05-16 | 深圳市新迪精密科技有限公司 | Arm type laser machine |
JP6955931B2 (en) * | 2017-08-22 | 2021-10-27 | 株式会社ディスコ | Inspection wafer and energy distribution inspection method |
JP7112204B2 (en) * | 2018-02-07 | 2022-08-03 | 株式会社ディスコ | Nondestructive detection method |
JP7256604B2 (en) * | 2018-03-16 | 2023-04-12 | 株式会社ディスコ | Nondestructive detection method |
CN112236842A (en) * | 2018-06-12 | 2021-01-15 | 东京毅力科创株式会社 | Substrate processing method, modifying apparatus, and substrate processing system |
JP7417411B2 (en) * | 2019-02-13 | 2024-01-18 | 株式会社ディスコ | Confirmation method |
JP7221076B2 (en) * | 2019-02-18 | 2023-02-13 | 東京エレクトロン株式会社 | LASER PROCESSING APPARATUS SETTING METHOD, LASER PROCESSING METHOD, LASER PROCESSING APPARATUS, THINNING SYSTEM, AND SUBSTRATE PROCESSING METHOD |
JP7219400B2 (en) * | 2019-02-19 | 2023-02-08 | 株式会社東京精密 | WORK INSPECTION METHOD AND APPARATUS AND WORK MACHINING METHOD |
JP7289592B2 (en) * | 2019-03-26 | 2023-06-12 | 株式会社ディスコ | Inspection board and inspection method |
CN111659989A (en) * | 2020-05-25 | 2020-09-15 | 中山大学 | Method for preparing titanium steel composite plate through cladding |
JP7465425B2 (en) | 2020-07-14 | 2024-04-11 | 株式会社東京精密 | Inspection method and apparatus for inspection wafer, and inspection wafer |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02101583A (en) * | 1988-10-11 | 1990-04-13 | Hitachi Ltd | Pattern inspection method for semiconductor device |
JP3408805B2 (en) | 2000-09-13 | 2003-05-19 | 浜松ホトニクス株式会社 | Cutting origin region forming method and workpiece cutting method |
JP2005177763A (en) * | 2003-12-16 | 2005-07-07 | Disco Abrasive Syst Ltd | Verifying apparatus for affected layer machined by laser beam |
US8604383B2 (en) * | 2004-08-06 | 2013-12-10 | Hamamatsu Photonics K.K. | Laser processing method |
JP2010192867A (en) * | 2009-01-20 | 2010-09-02 | Renesas Electronics Corp | Semiconductor integrated circuit device and semiconductor integrated circuit device manufacturing method |
DE102009050711A1 (en) * | 2009-10-26 | 2011-05-05 | Schott Ag | Method and device for detecting cracks in semiconductor substrates |
US9019498B2 (en) * | 2009-11-20 | 2015-04-28 | National Institute Of Advanced Industrial Science And Technology | Method for inspecting defects, inspected wafer or semiconductor device manufactured using the same, method for quality control of wafers or semiconductor devices and defect inspecting apparatus |
JP5370262B2 (en) * | 2010-05-18 | 2013-12-18 | 豊田合成株式会社 | Semiconductor light emitting chip and substrate processing method |
JP5615107B2 (en) * | 2010-09-10 | 2014-10-29 | 株式会社ディスコ | Split method |
JP5766530B2 (en) * | 2011-07-13 | 2015-08-19 | 株式会社ディスコ | Processing method of optical device wafer |
JP2013126682A (en) * | 2011-11-18 | 2013-06-27 | Hamamatsu Photonics Kk | Laser beam machining method |
WO2013126927A2 (en) * | 2012-02-26 | 2013-08-29 | Solexel, Inc. | Systems and methods for laser splitting and device layer transfer |
WO2014017135A1 (en) * | 2012-07-27 | 2014-01-30 | 三井金属鉱業株式会社 | Metal foil and electronic device |
JP5968150B2 (en) * | 2012-08-03 | 2016-08-10 | 株式会社ディスコ | Wafer processing method |
JP6062315B2 (en) * | 2013-04-24 | 2017-01-18 | 株式会社ディスコ | Wafer processing method |
JP6246561B2 (en) | 2013-11-01 | 2017-12-13 | 株式会社ディスコ | Laser processing method and laser processing apparatus |
US9291576B2 (en) * | 2014-07-11 | 2016-03-22 | Intel Corporation | Detection of defect in die |
-
2015
- 2015-08-07 JP JP2015157185A patent/JP2017037912A/en active Pending
-
2016
- 2016-07-05 TW TW105121237A patent/TW201714696A/en unknown
- 2016-07-19 SG SG10201605928TA patent/SG10201605928TA/en unknown
- 2016-07-27 KR KR1020160095542A patent/KR20170017728A/en unknown
- 2016-07-27 US US15/220,886 patent/US10249547B2/en active Active
- 2016-08-05 DE DE102016214566.5A patent/DE102016214566A1/en not_active Withdrawn
- 2016-08-05 CN CN201610635971.2A patent/CN106449597A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
KR20170017728A (en) | 2017-02-15 |
US20170040235A1 (en) | 2017-02-09 |
JP2017037912A (en) | 2017-02-16 |
DE102016214566A1 (en) | 2017-02-09 |
TW201714696A (en) | 2017-05-01 |
CN106449597A (en) | 2017-02-22 |
US10249547B2 (en) | 2019-04-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
HK1246622A1 (en) | Measurement device and measurement method | |
SG10201605928TA (en) | Test wafer and using method therefor | |
IL259578B (en) | Inspection apparatus and method | |
SG11201707198YA (en) | Wafer dryer apparatus and method | |
SG11201704323XA (en) | Wafer processing device and method therefor | |
SG11201802520YA (en) | Wafer inspection method and wafer inspection device | |
SG11201802518XA (en) | Wafer inspection device and wafer inspection method | |
EP3287799A4 (en) | Semiconductor device and scan test method | |
SG11201702286WA (en) | Residual-stress measurement device and residual-stress measurement method | |
HK1252032A1 (en) | Testing system and testing method | |
IL256187B (en) | Inspection substrate and inspection method | |
EP3127188A4 (en) | Testing method and apparatus | |
SG10201605035VA (en) | Wafer drying apparatus and wafer drying method | |
PL3077784T3 (en) | Assembly and method for testing point machines | |
SG10201600959YA (en) | Cutting apparatus and wafer cutting method | |
GB201607804D0 (en) | Inspection method | |
ZA201702133B (en) | Test device and method | |
GB2580802B (en) | Sample testing apparatus and method | |
EP3250020A4 (en) | Inspection support device and inspection support method | |
SG11201706514VA (en) | Method and apparatus for testing immune state | |
PL3270102T3 (en) | Shape inspection method, shape inspection device, and program | |
GB2542762B (en) | Measuring device and method | |
GB201500918D0 (en) | Measuring apparatus and method | |
FI3715933T3 (en) | Wafer inspection method and wafer | |
GB201518615D0 (en) | Test methods and apparatus |