KR102353912B1 - 레이저 가공 방법 - Google Patents

레이저 가공 방법 Download PDF

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Publication number
KR102353912B1
KR102353912B1 KR1020170032076A KR20170032076A KR102353912B1 KR 102353912 B1 KR102353912 B1 KR 102353912B1 KR 1020170032076 A KR1020170032076 A KR 1020170032076A KR 20170032076 A KR20170032076 A KR 20170032076A KR 102353912 B1 KR102353912 B1 KR 102353912B1
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KR
South Korea
Prior art keywords
resin layer
laser
resin
layer
resin substrate
Prior art date
Application number
KR1020170032076A
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English (en)
Korean (ko)
Other versions
KR20180013676A (ko
Inventor
타케시 이케다
미노리 아라카와
모모카 하시모토
코지 야마모토
Original Assignee
미쓰보시 다이야몬도 고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of KR20180013676A publication Critical patent/KR20180013676A/ko
Application granted granted Critical
Publication of KR102353912B1 publication Critical patent/KR102353912B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Laser Beam Processing (AREA)
KR1020170032076A 2016-07-28 2017-03-14 레이저 가공 방법 KR102353912B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016148328A JP6814459B2 (ja) 2016-07-28 2016-07-28 レーザ加工方法
JPJP-P-2016-148328 2016-07-28

Publications (2)

Publication Number Publication Date
KR20180013676A KR20180013676A (ko) 2018-02-07
KR102353912B1 true KR102353912B1 (ko) 2022-01-20

Family

ID=61075568

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170032076A KR102353912B1 (ko) 2016-07-28 2017-03-14 레이저 가공 방법

Country Status (4)

Country Link
JP (1) JP6814459B2 (ja)
KR (1) KR102353912B1 (ja)
CN (1) CN107685199A (ja)
TW (1) TW201804528A (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020017471A (ja) 2018-07-27 2020-01-30 三星ダイヤモンド工業株式会社 多層基板を切断する方法及び切断装置
JP2020019070A (ja) 2018-07-30 2020-02-06 三星ダイヤモンド工業株式会社 多層基板を切断する方法及び切断装置
JP2020053208A (ja) 2018-09-26 2020-04-02 三星ダイヤモンド工業株式会社 基板小片の切り出し方法及び切出装置
JP2020088217A (ja) 2018-11-28 2020-06-04 三星ダイヤモンド工業株式会社 基板小片の切り出し方法及び切出装置

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002343747A (ja) 2001-05-17 2002-11-29 Lintec Corp ダイシングシート及びダイシング方法
JP2004160524A (ja) 2002-11-15 2004-06-10 Seiko Epson Corp レーザー加工方法及び液滴吐出ヘッド
JP2005189530A (ja) 2003-12-25 2005-07-14 Nitto Denko Corp 積層型偏光板およびその製造方法
JP2005306418A (ja) 2004-04-20 2005-11-04 Shin Etsu Polymer Co Ltd 電子部品搬送体およびその製造方法
JP2006186263A (ja) 2004-12-28 2006-07-13 Disco Abrasive Syst Ltd 被加工物保持装置
JP2008284572A (ja) 2007-05-16 2008-11-27 Nitto Denko Corp レーザー加工方法及びレーザー加工品
JP2011053673A (ja) * 2009-08-06 2011-03-17 Sumitomo Chemical Co Ltd 偏光板の製造方法および当該方法により得られた偏光版
JP2013043292A (ja) 2011-08-22 2013-03-04 Kao Corp 積層体の製造方法
JP2014137507A (ja) 2013-01-17 2014-07-28 Toppan Tdk Label Co Ltd ラベルシート及びその製造方法
WO2016080347A1 (ja) * 2014-11-20 2016-05-26 日本ゼオン株式会社 光学フィルムの製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08174262A (ja) * 1994-12-27 1996-07-09 Matsushita Electric Ind Co Ltd エキシマレーザ加工方法
JP2006088260A (ja) * 2004-09-22 2006-04-06 Sumitomo Metal Mining Package Materials Co Ltd 接着剤層付きフレキシブル樹脂基板の穴開け加工方法
JP2007057622A (ja) * 2005-08-22 2007-03-08 Ricoh Co Ltd 光学素子及びその製造方法、光学素子用形状転写型の製造方法及び光学素子用転写型
CN101195191A (zh) * 2006-12-06 2008-06-11 中华映管股份有限公司 激光切割装置及激光切割方法
AU2010348477B2 (en) * 2010-03-19 2015-04-09 Toray Industries, Inc. Method for cutting carbon fiber base
JP2012045567A (ja) * 2010-08-26 2012-03-08 Sumitomo Electric Ind Ltd レーザ加工方法および装置
JP2014008511A (ja) 2012-06-28 2014-01-20 Mitsubishi Rayon Co Ltd 熱可塑性樹脂シートを切断する方法及び導光板
JP2014231071A (ja) * 2013-05-29 2014-12-11 三星ダイヤモンド工業株式会社 レーザ光による基板切断装置
JP2015020173A (ja) * 2013-07-16 2015-02-02 Ntn株式会社 レーザスクライブ装置およびレーザスクライブ加工方法
JP2016013566A (ja) * 2014-07-02 2016-01-28 Ntn株式会社 レーザ加工装置およびレーザ加工方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002343747A (ja) 2001-05-17 2002-11-29 Lintec Corp ダイシングシート及びダイシング方法
JP2004160524A (ja) 2002-11-15 2004-06-10 Seiko Epson Corp レーザー加工方法及び液滴吐出ヘッド
JP2005189530A (ja) 2003-12-25 2005-07-14 Nitto Denko Corp 積層型偏光板およびその製造方法
JP2005306418A (ja) 2004-04-20 2005-11-04 Shin Etsu Polymer Co Ltd 電子部品搬送体およびその製造方法
JP2006186263A (ja) 2004-12-28 2006-07-13 Disco Abrasive Syst Ltd 被加工物保持装置
JP2008284572A (ja) 2007-05-16 2008-11-27 Nitto Denko Corp レーザー加工方法及びレーザー加工品
JP2011053673A (ja) * 2009-08-06 2011-03-17 Sumitomo Chemical Co Ltd 偏光板の製造方法および当該方法により得られた偏光版
JP2013043292A (ja) 2011-08-22 2013-03-04 Kao Corp 積層体の製造方法
JP2014137507A (ja) 2013-01-17 2014-07-28 Toppan Tdk Label Co Ltd ラベルシート及びその製造方法
WO2016080347A1 (ja) * 2014-11-20 2016-05-26 日本ゼオン株式会社 光学フィルムの製造方法

Also Published As

Publication number Publication date
JP2018015784A (ja) 2018-02-01
KR20180013676A (ko) 2018-02-07
CN107685199A (zh) 2018-02-13
JP6814459B2 (ja) 2021-01-20
TW201804528A (zh) 2018-02-01

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