TW201736966A - 感光化射線性或感放射線性組成物、抗蝕劑膜、圖案形成方法、電子元件的製造方法、帶抗蝕劑膜的空白罩幕、帶抗蝕劑膜的空白罩幕的圖案形成方法 - Google Patents

感光化射線性或感放射線性組成物、抗蝕劑膜、圖案形成方法、電子元件的製造方法、帶抗蝕劑膜的空白罩幕、帶抗蝕劑膜的空白罩幕的圖案形成方法 Download PDF

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Publication number
TW201736966A
TW201736966A TW106110404A TW106110404A TW201736966A TW 201736966 A TW201736966 A TW 201736966A TW 106110404 A TW106110404 A TW 106110404A TW 106110404 A TW106110404 A TW 106110404A TW 201736966 A TW201736966 A TW 201736966A
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TW
Taiwan
Prior art keywords
group
atom
resist film
compound
sensitive
Prior art date
Application number
TW106110404A
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English (en)
Chinese (zh)
Inventor
土村智孝
後藤研由
Original Assignee
富士軟片股份有限公司
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Application filed by 富士軟片股份有限公司 filed Critical 富士軟片股份有限公司
Publication of TW201736966A publication Critical patent/TW201736966A/zh

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F12/02—Monomers containing only one unsaturated aliphatic radical
    • C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F12/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
    • C08F12/22—Oxygen
    • C08F12/24—Phenols or alcohols
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Emergency Medicine (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW106110404A 2016-03-31 2017-03-29 感光化射線性或感放射線性組成物、抗蝕劑膜、圖案形成方法、電子元件的製造方法、帶抗蝕劑膜的空白罩幕、帶抗蝕劑膜的空白罩幕的圖案形成方法 TW201736966A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016072445 2016-03-31
JP2016156117 2016-08-09

Publications (1)

Publication Number Publication Date
TW201736966A true TW201736966A (zh) 2017-10-16

Family

ID=59964356

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106110404A TW201736966A (zh) 2016-03-31 2017-03-29 感光化射線性或感放射線性組成物、抗蝕劑膜、圖案形成方法、電子元件的製造方法、帶抗蝕劑膜的空白罩幕、帶抗蝕劑膜的空白罩幕的圖案形成方法

Country Status (3)

Country Link
JP (1) JP6703097B2 (ja)
TW (1) TW201736966A (ja)
WO (1) WO2017169746A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI690774B (zh) * 2018-01-30 2020-04-11 日商旭化成股份有限公司 感光性樹脂積層體及抗蝕劑圖案之製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7438716B2 (ja) * 2018-11-14 2024-02-27 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011148984A (ja) * 2009-12-21 2011-08-04 Sumitomo Chemical Co Ltd 樹脂、フォトレジスト組成物及びレジストパターンの製造方法
JP5618619B2 (ja) * 2010-05-17 2014-11-05 富士フイルム株式会社 Ｘ線、電子線又はｅｕｖ光露光用の感活性光線性又は感放射線性樹脂組成物、並びに該組成物を用いたレジスト膜及びパターン形成方法
JP5538120B2 (ja) * 2010-07-30 2014-07-02 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物、膜及び該組成物を用いたパターン形成方法
JP2014010352A (ja) * 2012-06-29 2014-01-20 Fujifilm Corp 感活性光線性又は感放射線性樹脂組成物、並びに、該組成物を用いたレジスト膜、パターン形成方法、電子デバイスの製造方法及び電子デバイス
JP5865199B2 (ja) * 2012-07-09 2016-02-17 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、感活性光線性又は感放射線性膜を備えたマスクブランクス、パターン形成方法、及び、フォトマスクの製造方法
JP6007100B2 (ja) * 2012-12-27 2016-10-12 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物、感活性光線性または感放射線性膜及びパターン形成方法
JP6158754B2 (ja) * 2014-06-04 2017-07-05 信越化学工業株式会社 レジスト下層膜形成用組成物、及びパターン形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI690774B (zh) * 2018-01-30 2020-04-11 日商旭化成股份有限公司 感光性樹脂積層體及抗蝕劑圖案之製造方法

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WO2017169746A1 (ja) 2017-10-05
JPWO2017169746A1 (ja) 2018-12-13
JP6703097B2 (ja) 2020-06-03

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