TW201622079A - 在嵌入晶圓級球狀柵格陣列（ｅ－ｗｌｂ）及嵌入平板位準球狀柵格陣列（ｅ－ｐｌｂ）中嵌入晶圓級晶片刻劃封裝（ｗｌｃｓｐ）組件的方法 - Google Patents

在嵌入晶圓級球狀柵格陣列（ｅ－ｗｌｂ）及嵌入平板位準球狀柵格陣列（ｅ－ｐｌｂ）中嵌入晶圓級晶片刻劃封裝（ｗｌｃｓｐ）組件的方法 Download PDF

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TW201622079A
TW201622079A TW104126252A TW104126252A TW201622079A TW 201622079 A TW201622079 A TW 201622079A TW 104126252 A TW104126252 A TW 104126252A TW 104126252 A TW104126252 A TW 104126252A TW 201622079 A TW201622079 A TW 201622079A
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package
mold
mold layer
electrical components
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威傑 奈爾
索斯登 梅爾
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英特爾股份有限公司
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  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

本發明的實施例包含多晶粒封裝及此多晶粒封裝的製造方法。在實施例中，模層具有第一表面及與第一表面相反的第二表面。一或更多第一電組件均具有配向成面對模層的第一表面之可銲接端子。模層也具有一或更多第二電組件，各第二電組件均具有配向成面對模層的第二表面之第二型端子。實施例也包含一或更多形成於模層的第一表面與模層的第二表面之間的導電穿透通路。因此，形成從模層的第二表面至配向成面對模層的第一表面之第一電組件的電連接。

Description

在嵌入晶圓級球狀柵格陣列(E-WLB)及嵌入平板位準球狀柵格陣列(E-PLB)中嵌入晶圓級晶片刻劃封裝(WLCSP)組件的方法
實施例大致上關於半導體裝置。更特別地，實施例關於用於封裝半導體裝置的方法及裝置。
為了使例如行動通訊裝置及穿戴式裝置等行動產品中使用的電子組件所要求的空間最小，可以使用多晶粒系統封裝(SiP)。在SiP封裝中，多個具有不同功能的主動電子組件可以包含在單一封裝內。舉例而言，主動電子組件包含一或更多設有例如電晶體、二極體等等積體電路的半導體晶粒。SiP也包含一或更多被動電子組件，例如電阻器、電容器、積體被動裝置(IPD)等等。通常，組裝SiP的實體未產生被整合於SiP中的各電子組件。從外部來源取得的電子組件典型上容納於預封裝中。當使用某些封裝製程時，這些預封裝的組件不適合整合於SiP中。
舉例而言，SiP可以由嵌入晶圓級球狀柵格陣列(e-WLB)或是嵌入平板位準球狀柵格陣列(e-PIB)製程形 成。在這些封裝中，模層形成為圍繞眾多主動及被動電子組件以形成重新構成的晶圓或重新構成的平板。然後，在模層的表面上形成重分佈層以允許對端子的互連扇出至電組件的邊緣之外。在e-WLB及e-PLB封裝中，電子組件典型上使用黃金、鋁、或銅端子。
但是，當組件從外部源被容納於預封裝時，並非總能夠以銅、鋁、或黃金端子取得所需的電組件。取代地，預封裝的電子組件可以包含可銲接的端子，例如銲球。使用例如錫為基礎的銲材等可銲接材料會降低SiP的可靠度。裝置可靠度的降低是導因於在可銲接端子處形成金屬間化合物(IMC)。舉例而言，在高溫作業期間，例如銅重分佈層等重分佈層會與可銲接端子接觸，銅會擴散至銲材中以及產生IMC。IMC的體積低於銲材的體積以及在端子之內產生空穴或是造成端子斷裂。此外，在回熔作業期間銲材的體積將增加原始體積的低個位數百分比的值。當銲式端子嵌入於模層內時，除非銲材與模層之間有良好的黏著，否則此體積的增加將造成封裝斷裂。
100‧‧‧裝置封裝
101‧‧‧多晶粒封裝
102‧‧‧第二封裝
115‧‧‧通路條
116‧‧‧核心層
117‧‧‧落地焊墊
118‧‧‧通路
120‧‧‧預封裝組件
120A‧‧‧第一預封裝組件
120B‧‧‧第二預封裝組件
122‧‧‧可銲接端子
124‧‧‧開口
130‧‧‧電組件
132‧‧‧第二型端子
140‧‧‧模層
141‧‧‧第一表面
142‧‧‧第二表面
145‧‧‧基底
151‧‧‧重分佈層
152‧‧‧介電層
153‧‧‧互連
154‧‧‧銲料光阻層
155‧‧‧銲接凸塊
156‧‧‧導電軌跡
157‧‧‧銲接凸塊
161‧‧‧晶粒
162‧‧‧晶粒
171‧‧‧電路徑
172‧‧‧電路徑
210‧‧‧模載體
215‧‧‧通路條
217‧‧‧落地焊墊
218‧‧‧通路
220‧‧‧預封裝組件
222‧‧‧可銲接端子
230‧‧‧組件
232‧‧‧第二型端子
240‧‧‧模層
241‧‧‧第一表面
242‧‧‧第二表面
245‧‧‧基底
251‧‧‧重分佈層
252‧‧‧介電層
300‧‧‧多晶粒封裝
340‧‧‧模層
400‧‧‧封裝
402‧‧‧第二封裝
420‧‧‧預封裝組件
422‧‧‧可銲接端子
440‧‧‧模層
441‧‧‧第一表面
442‧‧‧第二表面
445‧‧‧基底
451‧‧‧重分佈層
453‧‧‧銲球
500‧‧‧計算裝置
圖1A是剖面圖，顯示根據本發明的實施例之包含多個實質上相同厚度的預封裝組件之裝置封裝。
圖1B是剖面圖，顯示根據本發明的實施例之包含多個不相同厚度的預封裝組件之裝置封裝。
圖2A-2H是剖面圖，顯示根據本發明的實施例之用 以形成封裝的各種處理作業。
圖3是根據本發明的實施例之在晶圓級形成的模層中的眾多裝置封裝之平面視圖。
圖4A-4D是剖面圖，顯示根據本發明的其它實施例之用以形成封裝的各種處理作業。
圖5是根據本發明的實施例之利用半導體封裝的電腦系統的方塊圖。
【發明內容及實施方式】
本發明的實施例包含裝置封裝及此裝置封裝的形成方法。在下述說明中，揭示例如特定材料及處理作業等眾多細節以提供本發明的實施例之更完整說明。習於此技藝者將清楚知道，即使沒有這些特定細節，仍可實施本發明的實施例。在其它情形中，未詳細說明例如半導體晶粒的積體電路等習知的特點，以免不必要地模糊本發明的實施例。此外，須瞭解，圖中顯示的各種實施例是說明性的表示，並未依比例繪製。
本發明的實施例允許預封裝電組件整合於例如SiP等以e-WLB或e-PLB製程形成的多晶粒封裝中。藉由將預封裝組件定向而使得可銲接端子在各種處理作業期間可以被隔離及保護，可克服上述導因於可銲接端子中IMC的形成之可靠度議題。在實施例中，可銲接端子嵌入於模層中且定向成面對模層的第一表面，而設有不易受IMC形成影響的端子之電子組件配向成端子延著模層的第二表面 曝露。在第二表面被處理以形成重分佈層之後，模層的第一表面會被凹陷以將可銲接端子曝露。
現在參考圖1A，說明根據本發明的實施例之裝置封裝100。根據實施例，裝置封裝100是多晶粒封裝，其包含設有可銲接端子122之一或更多預封裝組件120，可銲接端子122嵌入於模層140中。預封裝組件120配向成使得端子122面對模層140的第一表面141。如圖1A中顯示的實施例所示般，裝置封裝100具有二預封裝組件120，但是，實施例不侷限於此配置。舉例而言，裝置封裝100可以包含一或更多預封裝組件120。根據實施例，預封裝組件120可以是主動的及/或被動的電子組件。舉例而言，主動組件可為設有包含電晶體、二極體、等等的積體電路之半導體晶粒。在實施例中，主動電子組件可以是微處理器、晶片組組件、圖形處理器、類比裝置、射頻積體電路(RFIC)、等等。被動組件包含電阻器、電容器、等等、或是IPD。在設有二或更多預封裝組件120的實施例中，各預封裝組件可以具有不同的功能。例如，第一預封裝組件120A可以包含RFIC，而第二預封裝組件120B可為類比裝置。在增加的實施例中，第一預封裝組件120A可以是微處理器以及第二預封裝組件120B可以是圖形處理器。根據其它實施例，二或更多預封裝組件120可以提供實質上相同的功能。
本發明的實施例包含具有可銲接端子122之預封裝組件120，可銲接端子122是由易受金屬間化合物的形成影 響之材料形成。舉例而言，可銲接端子122可以是錫為基礎的銲式端子。根據實施例，預封裝組件120可為使用可銲接端子的任何封裝型式。舉例而言，預封裝組件120可以是晶圓級晶片尺寸封裝(WLCSP)。圖1A中顯示的可銲接端子122是銲球，但也可使用其它可銲接端子型式。舉例而言，可銲接端子可以是受控崩潰式晶片連接(C4)凸塊、陸面柵陣列(LGA)、等等。
裝置封裝100也包含配置在模層140內的一或更多電組件130。電組件130配向成使得端子132面對模層140的第二表面142，第二表面142是與第一表面141相反的。如此，可銲接端子122及第二型端子132延著模層140的不同表面曝露。本發明的實施例包含組件130，組件130是主動的及/或被動的電組件。如圖1A所示，有三個電組件，但是，實施例不侷限於此配置。
根據實施例，組件130具有不易受IMC形成影響的第二型端子132。舉例而言，第二型端子132可以是在回熔溫度下不熔化的高熔點導電材料。在實施例中，第二型端子132可以包含一或更多層導體材料。舉例而言，第二型端子可以是銅、鋁、鋁-銅合金、黃金、銅或黃金的合金、或是不易受IMC形成影響的其它金屬及合金。在本發明的實施例中，組件130不是被封裝的組件。但是，當封裝包含使用第二型端子132時，實施例可以包含預封的組件130，例如四方扁平無引腳(QFN)封裝。
根據實施例，封裝100又包含一或更多形成為穿過模 層140的導電通路。在實施例中，導電通路中之一或更多可以是被填以例如銅等導電材料的雷射鑽穿通路、穿模通路(TMV)、通路條或其任何組合。包含通路條115的使用之實施例顯示於圖1A中。一或更多通路條115在模層140的第一表面141與第二表面142之間提供導電路徑。如此，配向成朝向第一表面141的可銲接端子122可以電耦合至模層的第二表面142。因此，至例如印刷電路板(PCB)等基底145之電連接可以由面對第一表面141的可銲接端子122、及面對模層140的第二表面142的第二型端子132製成。
通路條115可以是預製的通路，其包含一或更多形成為穿過核心層116之導電通路118。核心層116可以是層疊的介電質、環氧樹脂為基礎的或環氧樹脂摻合物為基礎的、矽或陶瓷材料。在實施例中，核心可由例如矽或玻璃填料粒子等填料粒子填充。其它實施例可以包含未含有填料粒子的核心。在通路條115中的各通路118可以連接形成於通路條115的相對側上之落地焊墊117。舉例而言，落地焊墊117可以是銅或是任何其它適當的導電材料。
根據圖1A中所示的實施例，可銲接端子122的上表面及上陸墊177的上表面與模層140的第一表面141是實質共平面的。當預封裝組件120及通路條115是實質上相同厚度時，這些實施例是可能的。但是，其它實施例不侷限於此配置。
舉例而言，在圖1B中，顯示多晶粒封裝101，其實 質上類似於圖1A中所示的多晶粒封裝100。由於第一預封裝晶粒120A具有的厚度不等於第二預封裝晶粒120B的厚度，所以，封裝101與封裝100不同。舉例而言，在圖1B中，預封裝晶粒120A比預封裝晶粒120B還厚。如此，本發明的實施例包含一或更多開口124，一或更多開口124形成於模層140中以曝露較薄的預封裝晶粒120B的部份可銲接互連122。由於預封裝組件120未由組裝多晶粒封裝的實體生產，所以，不可能控制各預封裝組件120的厚度。因此，由於預封裝組件120的選取不受限於封裝厚度考量，所以，包含開口124的實施例允許在設計多晶粒封裝時有增加的彈性。
回至圖1A，重分佈層151可以形成於模層140的第二表面142上。重分佈層151包含一或更多導電軌跡，將各端子132耦合至互連153。導電軌跡允許互連153扇出至組件130的周圍之外，互連153電耦合至所述組件130。舉例而言，重分佈層151是例如銅層等導電層。如同此處所使用般，重分佈層包含單一金屬層、不同金屬層的堆疊、或合金。舉例而言，重分佈層151包含障壁層、種子層、不同金屬的堆疊、合金、等等。舉例而言，互連153可為銲球。
如同說明的實施例中所示般，介電層152可以形成在重分佈層151與模層140的第二表面142之間。舉例而言，介電層152可以是聚合物材料，例如聚醯亞胺、環氧樹脂或味素堆積膜(ABF)。將介電層圖型化以提供開口 給端子132及通路條115的下落地焊墊117。
根據其它實施例，重分佈層151可以形成為直接接觸模層140的第二表面142，以及，介電層152可以省略。實施例也包含銲料光阻層154，形成於部份重分佈層151之上。雖然在圖1A中所示的實施例中顯示單一重分佈層151及單一介電層152，但是，實施例不侷限於此配置。舉例而言，根據其它實施例，封裝100可以包含二或更多重分佈層151及/或零、一、或二或更多介電層152。
再參考圖1A，在實施例中，第二封裝102可以耦合至封裝100。在實施例中，第二封裝102設於封裝100上方。為了不模糊說明，第二封裝102圖示為區塊。但是，本發明的實施例可包含任何型式的裝置封裝之第二封裝102，例如WLCSP、e-WLB封裝、覆晶封裝、接線接合封裝、e-PLB封裝、或是實質上類似於封裝100的SiP封裝。第二封裝102包含一或更多主動或被動組件(未顯示)。根據實施例，第二封裝102也可為包含眾多導電軌跡156之基底，例如印刷電路板(PCB)。如同所示，第二封裝102可藉由一或更多通路條115而電耦合至基底145。舉例而言，互連155可以是銲球。封裝102也藉由互連155而電耦合至預封裝組件120。雖然圖1A顯示可銲接端子122及互連155為分離的組件，但是，須瞭解，在回熔期間，互連155及可銲接端子122可以熔化及融合在一起。
根據實施例，第二封裝102也將預封裝組件120電耦 合至基底145。如同圖1A中所示的實施例中所示般，電路徑171是從基底145經由通路條115而至連接通路條115至第二封裝102的銲接凸塊155、以及從第二封裝102經由銲接凸塊155連接至預封裝組件120的可銲接端子122而形成的。在實施例中，電路徑172可以從基底145、經由通路條115、經由銲接凸塊155而至形成於第二封裝102的表面上之導電軌跡156、以及經由第二銲接凸塊155而至預封裝組件120的可銲接端子122。將電路徑171及/或172配置成它們路經第二封裝102(或是其表面上)可以允許可銲接端子122電耦合至封裝100的其它組件130及基底145，而不要求在模層140的第一表面141上形成重分佈層。因此，可銲接端子122不會曝露至會擴散至可銲接端子122及形成IMC之例如銅等其它材料。
本發明的其它實施例也包含形成於封裝100與基底145之間的一或更多晶粒162。舉例而言，晶粒可以藉由一或更多銲接凸塊153而電耦合至組件130。晶粒可以是任何半導體晶粒，例如記憶體晶片、微處理器、等等，但也可為例如IPD等被動裝置。其它實施例包含封裝100，封裝100未包含形成於模層140的第二表面142與基底145之間的增加晶粒162。如同所示，實施例也包含增加的晶粒161，晶粒161藉由銲接凸塊157而電耦合至第二封裝102的底表面。其它實施例包含封裝100，封裝100未包含形成於模層140的第一表面141與第二封裝102之 間的晶粒161。
現在參考圖2A-2H，顯示多晶粒封裝形成方法。在圖2A中，眾多電組件安裝至模載體210。在實施例中，取放工具或晶片吹射機可用以安裝組件220至模載體210。舉例而言，模載體210包含黏著層(未顯示)以將組件固定至模載體210。
在實施例中，一或更多電組件是具有可銲接端子222的預封裝組件220。舉例而言，在圖2A中，二分別的預封裝組件安裝至模載體210。如同所示，預封裝組件220安裝至模載體210，以致於預封裝組件220的背側會由模載體210支撐，以及，可銲接端子222背離模載體210。須瞭解，預封裝組件220及可銲接端子實質上類似於上述參考圖1A所述，因此，於此不重複這些組件的詳細說明。
安裝至模載體210的電組件中之一或更多也可以是組件230，其實質上類似於參考圖1A所示的組件130。如同所示，組件230安裝至模載體210以致於第二型端子232由模載體210支撐且組件230的背側背離模載體210。因此，預封裝組件220的可銲接端子222配向成它們面向與第二型端子232定向面對之方向相反。
其它實施例也包含安裝一或更多通路條215至模載體210。舉例而言，多通路條215可以是預製的通路，在通路218的任一側上包含落地焊墊217。通路條215包含在落地焊墊217之間的Z方向上延伸的眾多通路218。舉例 而言，通路條215可以包含陶瓷、聚合物、矽或層疊核心216。
根據實施例，各預封裝組件220的厚度是實質上均勻的。如此，眾多可銲接互連222在Z方向上均位於實質上相同的位準。此外，通路條215的厚度可以選擇成頂落地焊墊217位於與可銲接互連222幾乎相同的高度。使各可銲接互連222及落地焊墊217在Z方向上延著實質相同的平面形成，則當模層240的第一側241在如下所述的後續的處理作業中凹陷時，會允許各互連222及落地焊墊217曝露。
由於可能從外部供應者接收預封裝組件220，所以，無法取得均具有相同厚度的封裝組件。在此情形中，本發明的實施例也包含選加的背側研磨處理，以在晶粒安裝至模載體210之前，將預封裝組件220的厚度歸一化。但是，須瞭解，本發明的實施例也使用具有不均勻厚度的預封裝組件220。於下，更詳細地說明這些實施例。
現在參考圖2B，在組件及模載體210上形成模層240。舉例而言，模層240可以是聚合材料或是環氧樹脂。在實施例中，以矽、玻璃等製成的填料子填充模層240。在實施例中，以壓模製程形成模層。模層240具有確保模層240的第一表面241形成於可銲接端子222及通路條215的上落地焊墊217上方之厚度。將可銲接端子222嵌入於模層240中會允許可銲接端子222在後續的處理作業中被隔離及保護。如此，在後續處理作業期間，可 銲接端子222不易受到IMC形成的影響。在實施例中，第二型互連232的表面與模層240的第二表面242實質上共平面。在所示的實施例中，模層240的第二表面242接觸模載體210。但是，須瞭解，當黏著層形成於模載體210上時，則互連232可以與黏著層的表面實質上共平面、及接觸。
根據實施例，如圖2C所示，封裝是上下顛倒翻轉。如同所示，第一表面241現在朝下且第二表面242現在朝上。此外，模載體210可以被移除。在包含黏著層的實施例中，黏著層也被移除。在實施例中，在模載體210被移除之後，第二型互連232的表面233曝露。
圖2C的模層240的剖面顯示提供部份模層240的視圖。但是，須瞭解，一或更多多晶粒封裝可以由單模層形成。舉例而言，圖3是形成在晶圓級的模層340的視圖。多個多晶粒封裝300可形成在模層340中。在實施例中，多晶粒封裝300可以嵌入於各虛線框圍繞的模層340之區域內。雖然圖3顯示形成在晶圓級的眾多封裝之形成，但是，須瞭解，根據各種實施例，可以在平板尺寸的模層上或是任何所需尺寸的模層上，實施類似的處理作業。接續在晶圓(或面板)級多晶粒封裝的形成之後，將各別的多晶粒封裝從晶圓(或面板)分割。舉例而言，以鋸子或雷射，執行分割。
現在回至圖2D中的處理流程，介電層252可以形成於模層240的第二表面242上。舉例而言，介電層252可 以是氮化物聚合物材料，例如聚醯亞胺、聚苯并唑(PBO)、ABF、或環氧樹脂為基礎的材料。在實施例中，以例如旋轉塗敷或層疊等沈積製程，沈積介電層252。介電層252可以圖型化以提供開口給端子232及通路條215的落地焊墊217。在實施例中，經由微影術(例如光罩對準機或步進機)或雷射(例如雷射直接成像(LDI)或是雷射移除)，達成圖型化。
根據實施例，重分佈層251可以形成於介電層252上以及電耦合至一或更多第二型終端232。在實施例中，重分佈層可以是任何導電層。重分佈層可以包含單金屬層、不同金屬層的堆疊、或合金。舉例而言，重分佈層151包含障壁層、種子層、不同金屬的堆疊、合金、等等。在實施例中，以例如電鍍、無電電鍍、濺射、印製、噴射或其任何組合等等此技藝中習知的處理，形成重分佈層251。
根據實施例，銲接光阻254可以形成於部份介電層252及重分佈層251之上。銲料光阻層254可由聚合物層構成。雖然在圖2D中顯示單一重分佈層251及單一介電層252，但是，本發明的實施例不侷限於此配置。舉例而言，根據其它實施例，可以形成二或更多重分佈層251及/或二或更多介電層252。在又另一實施例中，可以直接在模層240的第二表面241上形成重分佈層251以及省略介電層252。
在重分佈層251形成期間，可銲接互連222在模層240內被隔離。因此，可銲接互連222不會接觸重分佈層 251。假使在重分佈層251形成期間或是在重分佈層251形成後的處理作業期間，可銲接互連222被重分佈層接觸時，這可防止在可銲接互連222中可能發生之IMC形成。
現在參考圖2E，在實施例中，模層240再度翻轉，以致於模層240的第一表面241朝上及模層240的第二表面242朝下。模層240的第一表面241接著被凹陷以曝露預封裝組件220的可焊接互連222以及曝露通路條215的落地焊墊217的表面。舉例而言，以研磨或快速切削處理，使第一表面241凹陷。在實施例中，當模層240的第一表面241被凹陷時，部份可銲接端子222及/或落地焊墊217可以被移除。
根據其它實施例，藉由凹陷處理及雷射研磨處理的結合，可使可銲接互連222曝露。當預封裝組件220未具有相同厚度時，這些實施例是有利的。舉例而言，再參考圖1B，第一預封裝組件120A具有的厚度大於第二預封裝組件120B具有的厚度。如此，模層140的第一表面141可以凹陷以便在第一預封裝組件120A上曝露部份可焊接互連。之後，使用雷射研磨處理以形成開口124而曝露第二預封裝組件120B的部份可焊接互連122。接續在提供開口124的雷射研磨處理之後，用以形成設有不同厚度的預封裝組件之封裝的處理可以實質上類似於圖2F-2H中所示的處理作業，因此，此處不再重述。
現在參考圖2F，在實施例中，介電層252可以形成 於模層240的第一表面241上及曝露的可銲接端子222和通路條215的落地焊墊217上。形成於第一表面241上的介電層252可以實質上類似於形成在第二表面242上的介電層252。舉例而言，介電層252可以是聚合物材料。實施例包含以例如旋轉塗敷或層疊等沈積製程，形成介電層252。根據實施例，介電層接著被圖型化以曝露可焊接互連222及落地焊墊217。根據實施例，形成於第一表面241上的介電層252可以選擇性地被省略。替代實施例包含也在形成於第一表面241上的介電層252上形成重分佈層。於下，參考圖4A-4D，更詳細地說明設有此重分佈層的實施例。當重分佈層形成於第一表面241上時，銲料光阻層可以選加地形成於介電層252及部份重分佈層上。
之後，如圖2G所示，銲球253可以形成於銲層240的第二表面242上的部份重分佈層251上。根據實施例，銲球253不是都相同尺寸。較小的銲球253的出現會允許增加的晶粒262耦合至模層240之下的封裝。根據實施例，增加的晶粒262可以是增加的主動組件，例如微處理器、記憶體裝置、晶片組、類比裝置、RFIC、等等、或是其組合。雖然圖2F中所示的封裝包含增加的晶粒262，但是，實施例也包含沒有增加的晶粒262之封裝。
根據實施例，如圖2H所示，第二封裝202可以安裝至模層240的第一側241，以及，例如PCB等基底245可以安裝至銲接凸塊253。為了避免不必要地模糊說明，將第二封裝202以圖顯示區塊。但是，本發明的實施例包含 例如WLCSP、e-WLB封裝、e-PLB封裝、或SiP封裝等任何型式的裝置封裝之第二封裝202。第二封裝202可包含一或更多主動或被動組件(未顯示)。根據實施例，第二封裝202也可為包含眾多導電軌跡256的基底，例如印刷電路板(PCB)。在實施例中，半導體晶粒261可以藉由銲接互連257而耦合至第二封裝。
根據實施例，藉由一或更多銲接凸塊255，第二封裝202機械地及電地耦合至多晶粒封裝。第二封裝202具有形成於其底表面上的銲球。舉例而言，銲球255可以是經由落球處理而安裝的預製銲球。在第二封裝202對齊及設置成接觸封裝之後，將銲球255回熔。在實施例中，被回熔的銲球可以與預封裝晶粒220的可銲接互連222融合。
銲球255也將第二封裝202電耦合至通路條215的落地焊墊217。在實施例中，一或更多導電軌跡256將形成於落地焊墊217上的回熔銲球255電耦合至形成於預封裝晶粒220的回熔互連222上的回熔銲球255。因此，電路徑可以從基底245、經由通路條215而至連接通路條215至第二封裝202之銲接凸塊255、以及從第二封裝202經過連接至預封裝組件220的可銲接互連222之銲接凸塊255。此外，電路徑可以從基底245、經過通路條215、經過銲接凸塊255而至形成於第二封裝202的表面上之導電軌跡256、以及經過第二銲接凸塊255而至預封裝組件220的可銲接互連222。
根據圖4A中所示的增加的實施例，重分佈層481形 成於封裝的第一表面441上，以便提供從模層440的第二表面442至預封裝組件420之增加的電路徑。在此實施例中，即使當第二封裝402未安裝於模層440的第一表面441上方時，重分佈層481仍允許形成通至預封裝組件420的電路徑。用於形成此實施例的處理依循實質上同於參考圖2A-2E之上述處理作業，因此，此處將不重述。圖4A是跟隨圖2A-2E之上述揭示的處理之後的處理作業。
再參考圖4A，重分佈層481形成於模層440的第一表面441上。在實施例中，重分佈層481是導電材料。舉例而言，重分佈層481是單層或金屬層堆疊。在一實施例中，在沈積銅互連層之前，例如鎳金屬等厚障壁層或是鎳鎢鎳層堆疊可以形成於可銲接端子422上。因此，由於障壁層將限制或防止銅擴散至可銲接端子中，所以，可以避免可銲接端子422中IMC形成的議題。舉例而言，重分佈層481包含有機表面保護劑(OSP)或高貴金屬防護層。本發明的實施例包含以例如化學汽相沈積(CVD)、物理汽相沈積(PVD)、電鍍、無電電鍍、等等薄膜沈積製程，形成重分佈層481。在其它實施例中，在形成重分佈層481之前，介電層(未顯示)可以選擇性地形成於模層440的第一表面441上。實施例也包含在部份介電層及重分佈層481上形成銲料光阻層(未顯示)。包含重分佈層481允許形成電連接，所述電連接是藉由重分佈層481而自模層440的第二表面442、經過通孔條415、以及從通路條415直接至可銲接互連422。如此，可以製成對預 封裝組件420的連接，而不需要第二封裝402形成於模層440的第一表面441上方。
在實施例中，如圖4B所示，銲球453可以形成於模層440的第二表面442上曝露的部份重分佈層451上。根據實施例，銲球453不是都相同尺寸。較小的銲球453的出現會允許增加的晶粒462機械地及電地耦合至模層440之下的封裝。根據實施例，增加的晶粒462可以是增加的主動組件，例如微處理器、記憶體裝置、晶片組、等等、或是其組合。雖然圖4B中所示的封裝包含增加的晶粒462，但是，實施例也包含沒有增加的晶粒462之封裝。
之後，在圖4C中，第二封裝402可以安裝至模層440的第一表面441，以及，例如PCB等基底445可以安裝至銲球455。如同所示，第二封裝402包含眾多銲球455。將銲球455回熔以將第二封裝402電地及機械地耦合至重分佈層481。在實施例中，藉由銲球455，半導體晶粒461可以耦合至第二封裝。根據實施例，第二封裝402及半導體晶粒461可以實質上類似於上述參考圖2H所述的第二封裝202及半導體晶粒261，因此，此處將不重複詳細說明。
根據圖4D中所示的增加的實施例，第二封裝402包含陸面柵陣列(LGA)456以取代銲球455。在此實施例中，藉由熱壓接合製程，將第二封裝402接合至重分佈層481。在實施例中，第二封裝402可以在晶圓級(亦即在各封裝400被分割之前)或是在單元級(亦即在各封裝 400被分割之後)被接合。
圖5顯示根據實施例之計算裝置500。計算裝置500包含主機板502。主機板502包含多個組件，這些組件包含但不限於處理器504及至少一通訊晶片506。處理器504實體地及電地耦合至主機板502。在某些實施中，至少一通訊晶片506也是實體地及電地耦合主機板502。在另外的實施中，通訊晶片506是處理器504的一部份。
取決於其應用，計算裝置500包含實體地或電地耦合或未耦合至主機板502之其它組件。這些其它組件包含但不限於依電性記憶體(例如，動態隨機存取記憶體(DRAM)、非依電性記憶體(例如，唯讀記憶體(ROM))、快閃記憶體、圖形處理器、數位訊號處理器、密碼處理器、晶片組、天線、顯示器、觸控螢幕顯示器、觸控螢幕控制器、電池、音頻編解碼器、視頻編解碼器、功率放大器、全球定位系統裝置、羅盤、加速儀、陀螺儀、微機電系統(MEMS)、揚音器、相機、及大量儲存裝置(例如硬碟機、光碟(CD)、數位多樣式碟片(DVD)、等等)。
通訊晶片506能夠對計算裝置500進行資料傳輸的無線通訊。「無線」一詞及其衍生詞可以用以說明經由使用經過非固態介質之被調變的電磁輻射來傳輸資料之電路、裝置、系統、方法、技術、通訊通道、等等。此名詞並非意指相關的裝置未含有任何線，但是，在某些實施例中它們未含有任何線。通訊晶片506可以實施多種無線標準或 協定，包含但不限於Wi-Fi(IEEE 802.11系列)、WiMAX(IEEE 802.16系列)、IEEE 802.20、長程演進(LTE)、Ev-DO、HSPA+、HSDPA+、HSUPA+、EDGE、GSM、GPRS、CDMA、TDMA、DECT、藍芽、其衍生、以及任何其它被指定為3G、4G、5G、及之外的無線協定。計算裝置500包含眾多通訊晶片506。舉例而言，第一通訊晶片506專用於例如Wi-Fi及藍芽等較短程無線通訊，而第二通訊晶片506專用於例如GPS、EDGE、GPRS、CDMA、WiMAX、LTE、Ev-DO、等等較長程無線通訊。
計算裝置500的處理器504包含封裝在處理器504之內的積體電路晶粒。在某些實施中，處理器的積體電路晶粒封裝於根據實施例的多晶粒封裝中，多晶粒封裝包含設有可銲接端子的一或更多預封裝組件、以及一或更多電組件，預封裝組件配向成使可銲接端子面對模層的第一表面，電組件具有第二型端子，其中，第二型端子配向成使得它們面對與第一表面相反之模層的第二表面。「處理器」一詞意指處理來自暫存器及/或記憶體的電子資料以將電子資料轉換成可儲存於暫存器及/或記憶體中的其它電子資料之任何裝置或裝置的一部份。
通訊晶片506也包含封裝在通訊晶片506之內的積體電路晶粒。根據本發明的另一實施，通訊晶片的積體電路晶粒封裝於根據實施例的多晶粒封裝中，多晶粒封裝包含設有可銲接端子的一或更多預封裝組件、以及一或更多電 組件，預封裝組件配向成使可銲接端子面對模層的第一表面，電組件具有第二型端子，其中，第二型端子配向成使得它們面對與第一表面相反之模層的第二表面。
在另外的實施中，裝納於計算裝置500之內的另一組件含有積體電路晶粒，所述積體電路晶粒包含封裝於根據實施例的多晶粒封裝中，多晶粒封裝包含設有可銲接端子的一或更多預封裝組件、以及一或更多電組件，預封裝組件配向成使可銲接端子面對模層的第一表面，電組件具有第二型端子，其中，第二型端子配向成使得它們面對與第一表面相反之模層的第二表面。
在各式各樣的實施例中，計算裝置500可為膝上型電腦、輕省筆電、筆記型電腦、超輕薄筆電、智慧型手機、平板電腦、個人數位助理(PDA)、超薄行動PC、行動電話、桌上型電腦、伺服器、印表機、掃描器、監視器、機上盒、娛樂控制單元、數位相機、可攜式音樂播放器、或數位錄影機。在另外的實施中，計算裝置500可為處理資料的任何其它電子裝置。
本發明的實施例包含多晶粒封裝，其包括：模層，具有第一表面及與第一表面相反的第二表面；一或更多第一電組件，其中，各第一電組件均具有配向成面對模層的第一表面之可銲接端子；以及，一或更多第二電組件，其中，各第二電組件均具有配向成面對模層的第二表面之第二型端子。其它實施例包含多晶粒封裝，其中，可銲接端子是錫為基礎的銲材以及第二型端子包括銅、黃金、或 鋁。其它實施例包含多晶粒封裝，多晶粒封裝又包括形成於模層的第二表面上之電耦合至第二型端子中之一或更多的重分佈層。增加的實施例包括多晶粒封裝，多晶粒封裝又包括形成於重分佈層與模層的第二表面之間的介電層。其它實施例包含多晶粒封裝，多晶粒封裝又包括形成於部份重分佈層之上的銲料光阻層。其它實施例包含多晶粒封裝，多晶粒封裝又包括形成於模層的第一表面與模層的第二表面之間的一或更多導電穿透通路。其它實施例包含多晶粒封裝，其中，一或更多導電穿透通路是通路條，其中，通路條包括第一落地焊墊、第二落地焊墊、核心層、一或更多通路，第一落地焊墊具有與模層的第一表面實質上共平面的表面，第二落地焊墊具有與模層的第二表面實質上共平面的表面，核心層配置於第一及第二落地焊墊之間，一或更多通路形成為穿過核心層，電耦合第一及第二落地焊墊。其它實施例包含多晶粒封裝，多晶粒封裝又包括第二封裝，第二封裝藉由銲球而電地及機械地耦合至第一電組件中之一或更多以及多個導電通路中之一或更多。其它實施例包含多晶粒封裝，其中，封裝藉由一或更多銲球而電地及機械地耦合至基底，以及，其中，第一電組件藉由第二封裝及多個導電通路中之一或更多而電地耦合至基底。其它實施例包含多晶粒封裝，多晶粒封裝又包括形成於模層的第一表面上的第二重分佈層，第二重分佈層將一或更多可銲接端子電耦合至一或更多導電穿透通路。其它實施例包含多晶粒封裝，其中，多個第一電組件為預封 裝組件。其它實施例包含多晶粒封裝，其中，多個第一電組件中之一或更多是晶圓級晶片尺寸封裝。其它實施例包含多晶粒封裝，其中，第一電組件中之一或更多是實質上相同的厚度。其它實施例包含多晶粒封裝，其中，第一電組件中之一或更多的至少一個比其它第一電組件更薄。其它實施例包含多晶粒封裝，其中，從模層的第一表面形成開口以曝露較薄的第一電組件之可銲接端子。
本發明其它實施例包含多晶粒封裝形成方法，包括：將一或更多第一電組件安裝於模載體上，其中，第一電組件具有背離模載體的可銲接端子；將一或更多第二電組件安裝於模載體上，其中，第二電組件具有面向模載體的第二型端子；將一更多通路條安裝於模載體上；在模載體形成模層，其中，模層具有形成於第一電組件的可銲接端子上方以及通路條的上方之第一表面、以及形成於模載體上的第二表面；將模載體從模層移除；在模層的第二表面上形成重分佈層，其中，重分佈層接觸通路條的第一落地焊墊以及多個第二型端子中之一或更多；以及，使模層的第一表面凹陷以曝露通路條的第二落地焊墊以及多個可焊接端子中之一或更多。其它實施例包含方法，方法又包括：在模層的第二表面上形成介電層；以及，在形成重分佈層之前，將介電層圖型化以曝露第二型端子及通路條之一或更多落地焊墊。其它實施例包含方法，方法又包括：在重分佈層上以及通路條的一或更多落地焊墊上形成銲球；以及，藉由回熔銲球而將模層安裝至基底。其它實施例包含 方法，方法又包括藉由一或更多銲球而電地及機械地耦合第二封裝至可銲接端子以及多個通路條中之一或更多。其它實施例包含方法，其中，電地及機械地耦合第二封裝至可銲接端子之銲球被回熔以及與可銲接端子融合。其它實施例包含方法，其中，形成從第一電組件經過第二封裝及經過多個通路條中之一或更多而至基底之電路徑。其它實施例包含方法，其中，形成從第一電組件經過形成於第二封裝的表面上之導電軌跡及經過多個通路條中之一或更多而至基底之電路徑。
本發明的實施例包含多晶粒封裝，其包括：模層，具有第一表面及與第一表面相反的第二表面；一或更多第一電組件，其中，各第一電組件均具有配向成面對模層的第一表面之可銲接端子；以及，其中，可銲接端子是錫為基礎的銲材；一或更多第二電組件，其中，各第二電組件均具有配向成面對模層的第二表面之第二型端子，以及，其中，第二型端子包括銅、黃金、或鋁；以及，一或更多導電穿透通路，形成於模層的第一表面與模層的第二表面之間。其它實施例包含多晶粒封裝，其中，一或更多導電穿透通路是通路條，其中，通路條包括第一落地焊墊、第二落地焊墊、核心層、一或更多通路，第一落地焊墊具有與模層的第一表面實質上共平面的表面，第二落地焊墊具有與模層的第二表面實質上共平面的表面，核心層配置於第一及第二落地焊墊之間，一或更多通路形成為穿過核心層，電耦合第一及第二落地焊墊。其它實施例包含多晶粒 封裝，多晶粒封裝又包括第二封裝，第二封裝藉由銲球而電地及機械地耦合至第一電組件中之一或更多以及多個導電通路中之一或更多，其中，封裝藉由一或更多銲球而電地及機械地耦合至基底，以及，其中，第一電組件藉由第二封裝及多個導電穿透通路中之一或更多而電地耦合至基底。
100‧‧‧裝置封裝
102‧‧‧第二封裝
115‧‧‧通路條
116‧‧‧核心層
117‧‧‧落地焊墊
118‧‧‧通路
120A‧‧‧第一預封裝組件
120B‧‧‧第二預封裝組件
122‧‧‧可銲接端子
130‧‧‧電組件
132‧‧‧第二型端子
140‧‧‧模層
141‧‧‧第一表面
142‧‧‧第二表面
145‧‧‧基底
151‧‧‧重分佈層
152‧‧‧介電層
153‧‧‧互連
154‧‧‧銲料光阻層
155‧‧‧銲接凸塊
156‧‧‧導電軌跡
157‧‧‧銲接凸塊
161‧‧‧晶粒
162‧‧‧晶粒
171‧‧‧電路徑
172‧‧‧電路徑

Claims (25)

  1. 一種多晶粒封裝，包括：模層，具有第一表面及與該第一表面相反的第二表面；一或更多第一電組件，其中，各該第一電組件均具有配向成面對該模層的該第一表面之可銲接端子；以及，一或更多第二電組件，其中，各該第二電組件均具有配向成面對該模層的該第二表面之第二型端子。
  2. 如申請專利範圍第1項之多晶粒封裝，其中，該可銲接端子是錫為基礎的銲材以及該第二型端子包括銅、黃金、或鋁。
  3. 如申請專利範圍第1項之多晶粒封裝，又包括形成於該模層的該第二表面上之電耦合至該第二型端子中之一或更多的重分佈層。
  4. 如申請專利範圍第3項之多晶粒封裝，又包括形成於該重分佈層與該模層的該第二表面之間的介電層。
  5. 如申請專利範圍第3項之多晶粒封裝，又包括形成於部份該重分佈層之上的銲料光阻層。
  6. 如申請專利範圍第1項之多晶粒封裝，又包括形成於該模層的該第一表面與該模層的該第二表面之間的一或更多導電穿透通路。
  7. 如申請專利範圍第6項之多晶粒封裝，其中，一或更多導電穿透通路是通路條，其中，該通路條包括：第一落地焊墊，具有與該模層的第一表面實質上共平 面的表面；第二落地焊墊，具有與該模層的第二表面實質上共平面的表面；核心層，配置於該第一及第二落地焊墊之間；以及一或更多通路，形成為穿過該核心層，電耦合該第一及第二落地焊墊。
  8. 如申請專利範圍第6項之多晶粒封裝，又包括第二封裝，該第二封裝藉由銲球而電地及機械地耦合至多個該第一電組件中之一或更多以及多個該導電通路中之一或更多。
  9. 如申請專利範圍第8項之多晶粒封裝，其中，該封裝藉由一或更多銲球而電地及機械地耦合至基底，以及，其中，該多個第一電組件藉由該第二封裝及多個該導電通路中之一或更多而電地耦合至該基底。
  10. 如申請專利範圍第6項之多晶粒封裝，又包括形成於該模層的該第一表面上的第二重分佈層，該第二重分佈層將一或更多可銲接端子電耦合至一或更多導電穿透通路。
  11. 如申請專利範圍第1項之多晶粒封裝，其中，多個該第一電組件中是預封裝組件。
  12. 如申請專利範圍第11項之多晶粒封裝，其中，多個該第一電組件中之一或更多是晶圓級晶片尺寸封裝。
  13. 如申請專利範圍第1項之多晶粒封裝，其中，多個該第一電組件中之一或更多是實質上相同的厚度。
  14. 如申請專利範圍第1項之多晶粒封裝，其中，該一或多個第一電組件中至少之一比其它第一電組件更薄。
  15. 如申請專利範圍第14項之多晶粒封裝，其中，從該模層的該第一表面形成開口以曝露該較薄的第一電組件之該可銲接端子。
  16. 一種多晶粒封裝形成方法，包括：將一或更多第一電組件安裝於模載體上，其中，該第一電組件具有背離該模載體的可銲接端子；將一或更多第二電組件安裝於該模載體上，其中，該第二電組件具有面向該模載體的第二型端子；將一或更多通路條安裝於該模載體上；在該模載體形成模層，其中，該模層具有形成於多個該第一電組件的該可銲接端子上方以及多個該通路條的上方之第一表面、以及形成於該模載體上的第二表面；將該模載體從該模層移除；在該模層的該第二表面上形成重分佈層，其中，該重分佈層接觸該通路條的第一落地焊墊以及多個該第二型端子中之一或更多；以及，使該模層的該第一表面凹陷以曝露該通路條的第二落地焊墊以及多個該可焊接端子中之一或更多。
  17. 如申請專利範圍第16項之方法，又包括：在該模層的該第二表面上形成介電層；以及，在形成該重分佈層之前，將該介電層圖型化以曝露該第二型端子及多個該通路條之一或更多落地焊墊。
  18. 如申請專利範圍第16項之方法，又包括：在該重分佈層上以及多個該通路條的一或更多落地焊墊上形成銲球；以及，藉由回熔銲球而將該模層安裝至基底。
  19. 如申請專利範圍第18項之方法，又包括：藉由一或更多銲球而電地及機械地耦合第二封裝至該可銲接端子以及多個該通路條中之一或更多。
  20. 如申請專利範圍第19項之方法，其中，電地及機械地耦合該第二封裝至該可銲接端子之該銲球被回熔以及與該可銲接端子融合。
  21. 如申請專利範圍第20項之方法，其中，形成從該第一電組件經過該第二封裝及經過該多個通路條中之一或更多而至該基底之電路徑。
  22. 如申請專利範圍第20項之方法，其中，形成從該第一電組件經過形成於該第二封裝的表面上之導電軌跡及經過多個該通路條中之一或更多而至該基底之電路徑。
  23. 一種多晶粒封裝，包括：模層，具有第一表面及與第一表面相反的第二表面；一或更多第一電組件，其中，各該第一電組件均具有配向成面對該模層的該第一表面之可銲接端子；以及，其中，該可銲接端子是錫為基礎的銲材；一或更多第二電組件，其中，各該第二電組件均具有配向成面對該模層的該第二表面之第二型端子，以及，其中，該第二型端子包括銅、黃金、或鋁；以及， 一或更多導電穿透通路，形成於該模層的該第一表面與該模層的該第二表面之間。
  24. 如申請專利範圍第23項之多晶粒封裝，其中，該一或更多導電穿透通路是通路條，其中，該通路條包括：第一落地焊墊，具有與該模層的第一表面實質上共平面的表面；第二落地焊墊，具有與該模層的第二表面實質上共平面的表面；核心層，配置於該第一及第二落地焊墊之間；以及，一或更多通路，形成為穿過核心層，電耦合該第一及第二落地焊墊。
  25. 如申請專利範圍第24項之多晶粒封裝，又包括第二封裝，該第二封裝藉由銲球而電地及機械地耦合至多個該第一電組件中之一或更多以及多個該導電通路中之一或更多，其中，該封裝藉由一或更多銲球而電地及機械地耦合至基底，以及，其中，該第一電組件藉由該第二封裝及多個該導電穿透通路中之一或更多而電地耦合至該基底。
TW104126252A 2014-09-18 2015-08-12 在嵌入晶圓級球狀柵格陣列（ｅ－ｗｌｂ）及嵌入平板位準球狀柵格陣列（ｅ－ｐｌｂ）中嵌入晶圓級晶片刻劃封裝（ｗｌｃｓｐ）組件的方法 TWI610405B (zh)

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