TW201618264A - 支撐構件、導線基板、導線基板的製造方法及半導體封裝體的製造方法 - Google Patents

支撐構件、導線基板、導線基板的製造方法及半導體封裝體的製造方法 Download PDF

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TW201618264A
TW201618264A TW104124483A TW104124483A TW201618264A TW 201618264 A TW201618264 A TW 201618264A TW 104124483 A TW104124483 A TW 104124483A TW 104124483 A TW104124483 A TW 104124483A TW 201618264 A TW201618264 A TW 201618264A
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layer
wire
foil
resin
outermost
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TW104124483A
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TWI702702B (zh
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鈴木智博
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新光電氣工業股份有限公司
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    • H01L21/4814—Conductive parts
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Abstract

一種導線基板，包含一支撐構件以及形成在該支撐構件的一側上的一導線構件。該支撐構件包含彼此交錯的複數個金屬箔片與至少一樹脂層，使得該些金屬箔片之一作為該支撐構件該側上的一第一最外層，該些金屬箔片之另一作為該支撐構件另一側的一第二最外層。該第一最外層包含一厚箔片與一薄箔片，該薄箔片可剝離的附著在該厚箔片。該厚箔片接觸該至少一樹脂層。該薄箔片的一表面面對該支撐構件的一外側。該導線構件包含在該薄箔片上彼此交錯的複數個導線層與一絕緣層。該些金屬箔片的數目與該些導線層的數目相同。

Description

支撐構件、導線基板、導線基板的製造方法及半導體封裝體的 製造方法 參照相關申請
本申請基於且主張2014年7月31日提申的先前日本專利案No.2014-156617的優先權，全文在此引入做為參考。
在此說明的實施例是關於支撐構件、導線基板、導線基板的製造方法及半導體封裝體的製造方法。
隨著導線基板進步、厚度減薄，具有兩個或三個導線層的導線基板可形成為小於100微米(μm)的厚度。因為此種薄的導線基板的基板剛性低，使得薄導線基板在製程中很難處理。因此，為了確保基板有足夠剛性，提出具有在支撐構件上疊層多個導線構件的導線基板。
專利文件1：日本公開專利號No.2013-138115
然而，習知具有在支撐構件上疊層多個導線構件 的導線基板，支撐構件的層結構未針對導線構件作最佳化。因此，支撐構件可能厚於導線構件所需的厚度。
根據本發明的一樣態，提供一種導線基板。該導線基板包含一支撐構件以及形成在該支撐構件的一側上的一導線構件。該支撐構件包含彼此交錯的複數個金屬箔片與至少一樹脂層，使得該些金屬箔片之一作為該支撐構件該側上的一第一最外層，該些金屬箔片之另一作為該支撐構件另一側的一第二最外層。該第一最外層包含一厚箔片與一薄箔片，該薄箔片可剝離的附著在該厚箔片。該厚箔片接觸該至少一樹脂層。該薄箔片的一表面面對該支撐構件的一外側。該導線構件包含在該薄箔片上彼此交錯的複數個導線層與一絕緣層。該些金屬箔片的數目與該些導線層的數目相同。
本發明的目的與優點可藉由申請專利範圍中特別指出的元件及其組合來實現與達成。
須了解的是，前述的一般說明及下列詳細說明作為教示及說明，不限制申請專利範圍所主張的本發明。
1、1A、1B‧‧‧導線基板
10‧‧‧支撐體
101、102‧‧‧支撐構件
103‧‧‧支撐構件
104‧‧‧支撐構件
10a‧‧‧表面
10b‧‧‧另一表面
10A‧‧‧支撐體
11、111、112‧‧‧銅箔
12、121、122‧‧‧樹脂層
12a、12a1、12a2‧‧‧半固化物
13‧‧‧含載體的銅箔
13a‧‧‧薄箔片
13b‧‧‧厚箔片
20‧‧‧導線部分
20A、20B‧‧‧導線構件
21‧‧‧導線層
21x‧‧‧凹口
22‧‧‧絕緣層
22x‧‧‧穿孔
23‧‧‧導線層
24‧‧‧絕緣層
24x‧‧‧穿孔
25‧‧‧導線層
26‧‧‧防焊層
26x‧‧‧開口
71‧‧‧半導體晶片
72‧‧‧凸塊
73‧‧‧封裝樹脂
74‧‧‧凸塊
75‧‧‧黏著層
76‧‧‧半導體晶片
77‧‧‧接合線
78‧‧‧半導體晶片
79‧‧‧下填樹脂
80‧‧‧導線基板
81‧‧‧芯層
82‧‧‧導線層
83‧‧‧絕緣層
84‧‧‧導線層
85‧‧‧防焊層
85x‧‧‧開口
85y‧‧‧開口
86‧‧‧導線層
87‧‧‧絕緣層
88‧‧‧導線層
89‧‧‧防焊層
89x‧‧‧開口
90‧‧‧貫穿導線
95‧‧‧焊球
95a‧‧‧銅芯球
95b‧‧‧焊錫
98‧‧‧封裝樹脂
C‧‧‧虛線
D‧‧‧雙點虛線
圖1A至圖1B是示意圖，繪示根據本發明第一實施例的導線基板。
圖2A至圖4C是示意圖，繪示根據本發明第一實施例的導線基板的製程。
圖5A至圖6C是示意圖，繪示根據本發明第一實施例的半 導體封裝體製程。
圖7是剖面圖，繪示根據本發明第二實施例的導線基板。
圖8至圖9B是示意圖，繪示根據本發明第二實施例的導線基板製程。
圖10A至圖11是示意圖，繪示根據本發明第二實施例的半導體封裝體製程。
圖12是剖面圖，繪示根據本發明第二實施例的導線基板。
圖13A至圖15是示意圖，繪示根據第二實施例的變形例的半導體封裝體製程。
在下列，本發明的實施例將參照附隨圖式說明。在圖式中，類似的元件/部件會以類似的參考符號標示，因此省略其進一步的說明。
第一實施例
第一實施例中導線基板的結構
首先，說明根據本發明第一實施例的導線基板1的結構。圖1A與圖1B是示意圖，繪示第一實施例的導線基板1。圖1B是導線基板1的平面圖。圖1A是沿著圖1B中A-A線的剖面圖。
參照圖1A與圖1B，導線基板1是片型導線基板，具有多個被虛線C圍繞的區域。在導線基板1上進行各種製程後，如安裝半導體晶片以及形成封裝樹脂的製程，導線基板1由支撐構件被移除。接著，最後將導線基板1沿著虛線 C切割，使獲得多個獨立的半導體封裝體。雖然繪示在圖1A與1B實施例的導線基板1包括被虛線C環繞的區域21，包含在導線基板1的區域21的數目不限於繪示在圖1A與圖1B的區域21。
為方便起見，在此實施例中，朝向導線基板1的防焊層26的一側(圖1A中的上側)可稱為「上側」或「一側」，其中朝向導線基板1的銅箔11的一側(圖1A的下側)可稱為「下側」或「其他側」。再者，朝向防焊層26一側的每個部件(元件)的表面可稱為「上表面」或「一表面」，而朝向銅箔11的每個部件(元件)的表面可稱為「下表面」或「其他表面」。然而，導線基板1可被用在面朝下的狀態或定位在某一角度。進一步，「平面圖」代表由垂直於支撐構件101的表面10a的方向觀察一物體，且「平面形狀」代表由垂直於支撐構件101的表面10a的方向所觀察到的形狀。
導線基板1包括支撐構件101與導線部分20，導線部分20疊層在支撐構件101的表面10a的一側。支撐構件101形成有交錯疊層的金屬箔片與樹脂層，使一金屬箔片作為導線基板1的一側上的最外層，且另一金屬箔片作為導線基板1的另一側的最外層。更具體的說，支撐構件101的結構依序疊層有銅箔11、樹脂層12以及含載體的銅箔13。支撐構件101支撐導線基板20且支撐構件101的作用為增加整個導線基板1的強度與減少導線基板1的變形。
銅箔11的厚度，舉例而言，大約7微米(μm)至50微米。樹脂層12，舉例而言，為非光敏熱固樹脂，如環氧 型(epoxy)樹脂或高分子型(polyimide)樹脂。樹脂層12的厚度，舉例而言，大約10微米至50微米。樹脂層12可為所謂的半固化片(prepreg)，具有預先被浸透在由玻璃纖維或醯胺纖維(aramid)製成的編織或非編織布料的熱固樹脂(如環氧型樹脂或高分子型樹脂)。最佳使用半固化片作為樹脂層12，以確保導線構件20的強度與減少導線構件20的變形。樹脂層12可包括如二氧化矽(SiO2)的填充劑。
藉由剝離層(未繪示)，含載體的銅箔13的結構為薄箔片13a可剝離的附著在厚箔片(載體薄片)13b上。厚箔片13b可由銅形成且厚度，舉例而言，約為10微米至50微米。薄箔片13a也可由銅形成且厚度，舉例而言，約為1.5微米至5微米。厚箔片13b作為支撐構件以使薄箔片13a易於處理。厚箔片13b藉由樹脂層12附著到銅箔11。薄箔片13a的上表面充當支撐構件101的一表面10a。
導線構件20的結構依序疊層有導線層21、絕緣層22、導線層23以及防焊層26。導線層21包括形成在支撐構件101的表面10a上的墊或導線圖案。舉例而言，銅(Cu)可作為導線層21的材料。導線層21的厚度，舉例而言，為5微米至20微米。
絕緣層22形成在支撐構件101的表面10a上以覆蓋導線層21。絕緣層22，舉例而言，可由環氧型樹脂或高分子型樹脂形成。絕緣層22的厚度，舉例而言，約為10微米至50微米。絕緣層22為所謂的半固化片，具有預先被浸入在玻璃纖維或醯胺纖維製成的編織或非編織布料的熱固型樹脂(如 環氧型樹脂、高分子型樹脂)。最佳使用半固化片作為絕緣層22，以確保支撐構件101的強度與減少支撐構件101的變形。絕緣層22可包括如二氧化矽的填充劑。
形成在絕緣層22一側上的導線層23電性連接到導線層21。導線層23包括一穿孔導線，穿孔導線填充穿孔22x的內側，穿孔22x貫穿絕緣層22且暴露導線層21的上表面。導線層23也包括形成在絕緣層22上表面的導線圖案。穿孔22x是倒圓錐形凹口，包括防焊層26一側上的開口與由導線層21上表面形成的底面。防焊層26一側上的開口的面積大於凹口底面的面積。穿孔22x的開口直徑，舉例而言，約為50微米至100微米。導線層23的材料和導線層21的材料相同，且導線層23的導線圖案的厚度與導線層21的導線圖案的厚度相同。
防焊層26形成在絕緣層22的上表面，以允許由防焊層26中選擇性暴露導線層23。舉例而言，具有酚(phenol)型樹脂或高分子型樹脂作為主要構件的光敏絕緣樹脂可作為防焊層26的材料。二擇一地，具有環氧型樹脂或高分子型樹脂作為主要構件的非光敏絕緣樹脂可作為防焊層26的材料。防焊層26可包括如二氧化矽或氧化鋁(alumina)的填充劑。
防焊層26包括開口26x。在開口26x的底部暴露部分的導線層23。暴露在開口26x底部的導線層23作用為電子元件安裝墊，可電性連接到如半導體晶片的一電子元件。
表面處理層(未繪示)可形成在暴露在開口26x底部的導線層23的上表面。舉例而言，表面處理層可為金(Au) 層、鎳/金層(Ni/Au，如包含以此順序疊層的鎳層與金層的金屬層)、鎳/鈀/金層(Ni/Pd/Au，如包含以此順序疊層的鎳層、鈀層與金層的金屬層)。在暴露在開口26x底部的導線層23的上表面進行抗氧化製程(如有機保焊劑Organic Solderability Preservative)以形成表面處理層。由有機保焊劑製程所形成的表面處理層是有機塗布膜，舉例而言，為唑類(azole)化合物或咪唑(imidazole)化合物。
在此實施例中，包含在支撐構件101中的金屬箔片(銅箔)層的數目與包含在導線構件20的導線層的數目相同。即，組成支撐構件101的金屬箔片層的數目是兩層，其中第一層可為銅箔11且第二層可為含載體的銅箔13。組成導線構件20的導線層數目也是兩層，其中第一層可為導線層21且第二層可為導線層23。須注意的是，技術上來說，含載體的銅箔13包括薄箔片13a與厚箔片13b。然而，由評估強度與變形的觀點來說，將含載體的銅箔13當成單一層是合理的。
藉由形成導線基板1，使得包含在支撐構件101中的金屬箔片(銅箔)的層的數目和包含在導線構件20中的導線層的數目相同(即支撐構件101與導線構件20皆有兩層)，導線基板1形成垂直對稱的層結構。因為此垂直對稱的層結構，導線基板1可抵抗變形。進一步，類似於導線構件20的層狀結構，支撐構件101也包含樹脂層與金屬箔片的層狀結構。因此，即使在支撐構件101相當薄的例子中，支撐構件101也可具有一定強度。
藉由調整包含在支撐構件101與導線構件20中的 每層的厚度，使得整個支撐構件101的厚度與整個導線構件20的厚度大體上相同，可改良導線基板1上側與導線基板1下側之間的平衡。因此，導線基板1的結構可抗變形。
即使在確保導線基板1剛性的例子中，當整個支撐構件101的厚度與整個導線構件20的厚度差異變大，因為支撐構件101與導線構件20之間物理性質的差異(如熱膨脹係數)，導線基板1變形的可能性變高。因此，整個支撐構件101的厚度與整個導線構件20的厚度需要盡可能的相同。舉例而言，在整個支撐構件101的厚度與整個導線構件20的厚度之間的差異最佳小於或等於±50%，更佳為小於或等於±20%。
隨著導線基板1變更薄，整個支撐構件101的厚度須大於或等於整個導線構件20的厚度，以確保導線基板1的剛性。從防止變形的觀點來看，整個支撐構件101的厚度與整個導線構件20的厚度之間的差異也最佳小於或等於+50%，更佳為小於或等於+20%。
從防止變形的觀點來看，具有相同成分的絕緣樹脂最佳作為支撐構件101的樹脂層12與導線構件20的絕緣層22。
製造第一實施例的導線基板及類似物的方法
下一步，說明根據本發明第一實施例製造導線基板的方法。進一步，說明半導體封裝體的製造方法，半導體封裝體包括具有半導體晶片安裝其上的導線基板1。圖2A至圖4C為示意圖，繪示第一實施例的導線基板1的製程。圖5A至圖6C是示意圖，繪示第一實施例的半導體封裝體製程。
繪示在圖2A與圖2B的製程中，具有支撐構件101形成在另一支撐構件102(第二層體)上的支撐體10被製造。圖2A是支撐體10的剖面圖。圖2B是支撐體10的平面圖。在此實施例中，半固化片作為樹脂層12。然而，根據支撐體10所需的強度，樹脂層12可由不包含玻璃布或類似物的樹脂形成。須注意的是，支撐構件101可參照為支撐體10的第一層狀體，且支撐構件102可參照為支撐體10的第二層狀體。
為製造支撐體10，準備兩個半固化物12a。每個半固化物12a是預浸在如環氧型樹脂的樹脂中的編織布料(如編織玻璃布料、編織醯胺布料)或非編織布料(如非編織玻璃布料、非編織醯胺布料)。半固化物12a在半固化(B-stage)狀態。半固化物12a的平面形狀可為長度與寬度尺寸皆約為400釐米(mm)至500釐米的方形。半固化物12a的厚度，舉例而言，約為10微米至50微米。
進一步，準備兩個銅箔以及兩個包括薄箔片13a與厚箔片13b的含載體銅箔13。含載體的銅箔13的平面形狀可為方形，略小於半固化物12a的平面形狀。進一步，銅箔11的平面形狀可為方形，略小於含載體的銅箔13的平面形狀。同上述，已說明如銅箔11的厚度與含載體的銅箔13的厚度等尺寸。
接著，如圖2A的箭頭上方區域所繪示，含載體的銅箔13(即支撐構件102的最下層)定位在薄箔片13a面朝下的狀態。接著，在此狀態下，形成支撐構件102的半固化物12a與銅箔11依序疊層在含載體的銅箔13的厚箔片13b上。接著， 形成支撐構件101的銅箔11與半固化物12a依序疊層在支撐構件102的銅箔11上。接著，在薄箔片13a面朝上的狀態下，形成支撐構件101的含載體的銅箔13疊層在支撐構件101的半固化物12a上。須注意的是，前述構件依序疊層，使得其中心大體上彼此對齊。
接著，在真空下每個半固化物12a被加熱到約190℃至230℃的狀態下，藉由從支撐構件101的含載體的銅箔13到支撐構件的102的含載體的銅箔13的側面施加壓力，每個半固化物12a被固化。因此，如圖2A箭頭下方的區域所繪示，每個半固化物12a個別被固化形成樹脂層12。於是，製造出具有支撐構件102以及支撐構件102上疊層有支撐構件101的支撐體10。
在支撐構件101中，藉由埋入樹脂層12的上表面，含載體的銅箔13附著到樹脂層12，其中藉由埋入樹脂層12的下表面，銅箔11被附著到樹脂層12。含載體的銅箔13的上表面(薄箔片13a的上表面)從樹脂層12的上表面暴露出來，且含載體的銅箔13的側面被樹脂層12覆蓋。含載體的銅箔13的薄箔片13a的上表面可和樹脂層12的上表面共平面。銅箔11的下表面由樹脂層12的下表面暴露出來，且銅箔11的側面被樹脂層12覆蓋。銅箔11的下表面可和樹脂層12的下表面共平面。
為了方便起見，支撐構件102使用不同於支撐構件101的參考符號。然而，支撐構件101和支撐構件102具有相同的層組態，不同的是，支撐構件102為相對於支撐構件101垂 直反轉。雖然支撐構件101的銅箔11的下表面(暴露面)以及支撐構件102的銅箔11的上表面(暴露面)彼此接觸，支撐構件101的銅箔11的下表面以及支撐構件102的銅箔11的上表面彼此不附著。圍繞支撐構件101的銅箔11的下表面之支撐構件101的樹脂層12的暴露面的外周圍部分(其上無形成銅箔11的區域)以及圍繞支撐構件102的銅箔11的上表面之支撐構件102的樹脂層12的暴露面的外周圍部分(其上無形成銅箔11的區域)，該兩外周圍部分彼此附著。
在圖2B中，被雙點虛線D包圍的每個區域會變成片型導線基板1。即，被雙點虛線D包圍的每個區域對應於單個導線基板1，單個導線基板1由多個導線基板1獨立出來，在製程的最後步驟，藉由沿著雙點虛線D(如圖1A與圖1B)切割支撐體10得到。從平面圖上，被雙點虛線D包圍的每個區域被排列的比銅箔11的外邊緣更向內。雖然圖2B的實施例繪示具有10個被雙點虛線D包圍的區域，但區域的數目不限於10個。
下面製程將使用剖面圖進行說明，繪示對應於單個導線基板1的區域內部的半導體封裝體的區域(對應於圖1A與圖1B中虛線C包圍的區域)。在製程的最後步驟，由圖2B中分離雙點虛線D圍繞的區域，可得到單個導線基板1。
在圖3A至圖4B繪示的製程中，導線層與絕緣層交錯疊層在支撐體10的一表面10a與另一表面10b每個上(如在支撐構件101與支撐構件102每個上)，以製造導線構件20。製造在支撐體10的一表面10a上的一側的導線構件20，使得 包括在支撐構件101的金屬箔片的層的數目以及包括在導線構件20的導線層的數目相同。類似地，製造在支撐體10的另一表面10b的一側的導線構件20，使得包括在支撐構件102的金屬箔片的層的數目以及包括在導線構件20的導線層的數目相同。
首先，繪示在圖3A的製程中，導線層21形成在支撐體10的一表面10a與另一表面10b每個(支撐構件101、102)上。更詳細地說，包括開口(其與導線層21互補)的阻層被形成在支撐體10的一表面10a與另一表面10b每個上，舉例來說，藉由使用乾阻模形成。接著，導線層21形成在暴露支撐體10的一表面10a與另一表面10b的開口內。舉例而言，將含載體的銅箔13作為供電層，藉由電鍍方法形成導線層21。
舉例而言，銅(Cu)可作為導線層21的材料。又，金層(Au)可形成在導線層21的一側，導線層21接觸含載體的銅箔13，且接著鈀層、鎳層、或銅層可形成在金層上。導線層21的厚度，舉例而言，約為5微米至20微米。在形成導線層21之後，移除阻層。
接著，在圖3B繪示的製程中，絕緣層22形成在支撐體10的一表面10a與另一表面10b每個上，以覆蓋導線層21。舉例而言，具有環氧型樹脂或高分子型樹脂為主要構件的膜型非光敏絕緣樹脂(如熱固樹脂)可作為絕緣層22的材料。所謂的半固化物可作為絕緣層22。半固化物可為預浸在如環氧型樹脂的熱固型樹脂的編織布料(如編織玻璃布料、編織 醯胺布料)或非編織布料(如非編織玻璃布料、非編織醯胺布料)。絕緣層22的厚度，舉例而言，約為10微米至50微米。絕緣層22可包括如二氧化矽的填充劑。
更詳細的說，在非固化狀態的膜型絕緣樹脂被疊層在支撐體10的一表面10a與另一表面10b每個上，以覆蓋導線層21。接著，藉由加熱疊層的絕緣樹脂到大於或等於熱固溫度的溫度，同時施加壓力到疊層的絕緣樹脂，疊層的絕緣樹脂可被固化。因此，形成絕緣層22。藉由在真空中疊層絕緣樹脂，可防止空孔的形成。二擇一地，絕緣層22可藉由施加液體或膠型熱固樹脂(如環氧型樹脂、高分子型樹脂)且固化該熱固樹脂而形成。
在形成絕緣層22之前，先使導線層21的表面粗糙化，可增加導線層21與絕緣層22之間的附著力。導線層21的表面的粗糙化可藉由使用蟻酸(formic acid)的濕蝕刻方法進行。
接著，在圖3C繪示的製程中，貫穿絕緣層22且暴露導線層21的表面的穿孔22x被形成在絕緣層22內。穿孔22x，舉例而言，可藉由使用二氧化碳雷射或類似物的雷射加工方法被形成。在以雷射加工方法形成穿孔22x之後，最佳進行無電鍍銅(desmear)製程以移除附著在暴露在通孔22x底部的導線層21表面的殘餘樹脂。
穿孔22x是凹口，包括在防焊層26一側的一開口與由導線層21表面形成的底面。在防焊層26一側的開口的面積大於凹口的底面的面積。舉例而言，在一例中，其中在穿孔 22x雙側的開口為圓形，穿孔22x是具有圓錐形或反轉截斷圓錐形的凹口。在此例中，在防焊層26一側的穿孔22x的開口直徑，舉例而言，約為50微米至100微米。
接著，在圖4A繪示的製程中，導線層23形成在每個絕緣層22上。導線層23包括填入穿孔22x的穿孔導線以及形成在絕緣層22上的導線圖案。導線層23電性連接到暴露在穿孔22x底部的導線層21。舉例而言，銅(Cu)可作為導線層23的材料。包括在導線層23的導線圖案的厚度，舉例而言，約為5微米至20微米。導線層23可藉由使用不同的方法形成，如使用半加法方式或減法方式形成。
舉例而言，在使用半加法形成導線層23的例子中，首先，由銅或類似物製成的種子層(未繪示)藉由無電式化學鍍(electroless plating)方法或濺鍍方法形成。種子層形成在暴露在穿孔22x底部的導線層21的表面上以及包括穿孔22x的內壁表面的整個絕緣層22的表面上。接著，包括對應於導線層23的開口的阻層(未繪示)形成在種子層上。接著，由銅或類似物製成的電鍍層(未繪示)形成在阻層的開口裡。接著，在移除阻層之後，電鍍層做為遮罩，以移除未被電鍍層覆蓋的部分的種子層。因此，形成具有電鍍層疊層在種子層上的導線層23。
接著，如圖4B所繪示的製程，覆蓋導線層23的防焊層26形成在每個絕緣層22上。舉例而言，具有酚型樹脂或高分子型樹脂作為主要構件的液體或膠體型光敏絕緣樹脂可作為防焊層26的材料。光敏樹脂可施加在每個絕緣層22 上，以藉由網印法、捲塗布法或旋轉塗布法覆蓋導線層23。二擇一地，膜型光敏絕緣樹脂可被疊層在每個絕緣層22上，以覆蓋導線層23。
接著，藉由暴露與曝光所施加或疊層的光敏絕緣樹脂(黃光方法)，開口26x形成在防焊層26裡面。在具有環氧型樹脂或高分子型樹脂作為主要構件的非光敏絕緣樹脂(熱固樹脂)的例子中，非光敏絕緣樹脂作為防焊層26。開口26x，舉例而言，可由雷射加工方法或爆炸方法形成。因此，部分的導線層23可暴露在開口26x底部。暴露在開口26x底部的導線層23可作為電子元件安裝墊，被電性連接到如半導體晶片的電子元件。
表面加工層可形成在暴露在開口26x底部的導線層23的表面上。表面加工層的一個例子可為上述的表面加工層。在形成防焊層26之前，將每個導線層23的表面粗糙化，使導線層23與防焊層26之間的附著力增加。因此，最佳在形成防焊層26之前，粗糙化導線層23的表面。導線層23的表面粗糙化可由使用蟻酸的濕蝕刻方法進行。
藉由進行圖4B中所繪示的製程，導線構件20形成在支撐體10的每個表面10a與每個另一表面10b上。
接著，在圖4C繪示的製程中，進行片分切(sheet division)以製造多個導線基板1。術語「片分切」參照為分離支撐構件101與支撐構件102的製程，以製造具有導線構件20疊層在支撐構件101的一個導線基板1以及製造具有導線構件20疊層在支撐構件102的另一個導線基板1。
進行片分切時，藉由佈線製程(routing process)或類似製程，疊層在支撐體10每一側的支撐體10與導線構件20兩者沿著圖2D中的雙點虛線D在厚度方向切割。在圖2B中，平面圖上，被雙點虛線D包圍的每個區域被排列比銅箔11的外邊緣更內側。即，被雙點虛線D包圍的每個區域排列比支撐構件101與支撐構件102之間的附著部分(環繞支撐構件101的銅箔11的下表面之支撐構件101的樹脂層12的暴露表面以及環繞支撐構件102的銅箔11的上表面之支撐構件102的樹脂層12的暴露表面之間的接觸區域)更向內側。
於是，藉由片分切製程，每片由支撐構件101與支撐構件102之間的附著部分被分離。因此，每個分開的片成為只有支撐構件101的銅箔11的下表面以及支撐構件102的銅箔11的上表面彼此接觸的狀態。結果，支撐構件101與支撐構件102容易在銅箔11彼此接觸之處分離。因此，多個導線基板1(在此實施例中，為20個導線基板)被製造。
如上述，為方便起見，支撐構件101與支撐構件102兩者以不同參考符號表示。然而，支撐構件101與支撐構件102有相同的層組態。因此，具有導線構件20疊層在支撐構件101上的導線基板1以及具有導線構件20疊層在支撐構件102上的導線基板1是相同的。
接著，在圖5A繪示的製程中，藉由凸塊72，半導體晶片71為覆晶接合在導線基板1的導線構件20上。更詳細的說，進行回流製程(reflow process)或類似製程，由導線基板1的開口26x暴露出來的導線層23與半導體晶片71的墊 (未繪示)藉由凸塊72被接合。舉例而言，焊球可作為凸塊72。舉例而言，包含鉛(Pb)的合金、包含錫(Sn)與銅的合金、包含錫與銻(Sb)的合金、包含錫與銀的合金或包含錫、銀與銅的合金等可作為凸塊72的材料。下填的樹脂可施加在半導體晶片71與導線構件20之間。接著，封裝半導體晶片71與凸塊72的封裝樹脂73，舉例而言，由使用封裝模的轉移成形(transfer molding)法形成。舉例而言，包括填充劑(所謂的成形樹脂)的熱固絕緣樹脂(如環氧型樹脂)可作為封裝樹脂73。
接著，在圖5B繪示的製程中，部分的支撐構件101被剝離。更詳細的說，藉由加入機械力到支撐構件101，含載體的銅箔13的薄箔片13a與含載體的銅箔13的厚箔片13b之間的介面可剝離。如上述，含載體的銅箔13的結構為厚箔片13b附著到插入剝離層(未繪示)的薄箔片13a。因此，厚箔片13b可容易隨著剝離層(未繪示)由薄箔片13a剝離。於是，只有薄箔片13a維持在導線構件20的下表面一側上，而包含在支撐構件101的其他構件(除了薄箔片13a以外的支撐構件101的構件)被移除。除了厚箔片13b和剝離層一起由薄箔片13a被剝離的例子之外，當剝離層的內聚力失效時，厚箔片13b可由薄箔片13a剝離。此外，厚箔片13b由剝離層剝離時，厚箔片13b可由薄箔片13a剝離。
接著，在圖5C繪示的製程中，薄箔片13a被移除，以暴露導線層21的下表面，使得凸塊74可形成在導線層21的下表面。由銅形成的薄箔片13a可藉由濕蝕刻方法移除，舉 例而言，使用二氧化氫(hydrogen peroxide)/硫酸液(sulfuric acid solution)、過硫酸鈉(sodium persulfate)液或硫酸銨(ammonium persulfate)液移除。在由銅形成導線層21的例子中，進行蝕刻製程的時間需被控制，使得在移除薄箔片13a之後，導線層21的下表面不被移除。
根據需求，在圖6A繪示的製程中，蝕刻時間可控制到一較長時間，意欲移除導線層21的下表面且形成凹口21x。在此例子中，較易形成凸塊74，因為導線層21的下表面暴露在相對於絕緣層22下表面的較凹區域。此外，不能藉由用以移除薄箔片13a的蝕刻液移除的層(如金層)，可預先形成在導線層21的下表面(向外暴露的表面)。在此例子中，不需控制蝕刻時間，因為金層或類似物作用為一蝕刻停止層。
舉例而言，焊球可做為凸塊74。包含鉛的合金、包含錫與銅的合金、包含錫與銻的合金、包含錫與銀的合金或包含錫、銀與銅的合金可作為焊球的材料。
接著，在圖6B繪示的製程中，繪示在圖5C中的結構體沿著虛線C使用切片機(slicer)或類似物進行切割。因此，可獲得多個半導體封裝體，其中每個半導體封裝體具有半導體晶片71安裝在導線構件20上，且由封裝樹脂73封裝。如圖6A所繪示，在凹口21x形成在絕緣層22下表面裡的例子中，可獲得圖6C所繪示的多個半導體封裝體。
因此，在上述製造導線基板1的製程中，首先，具有支撐構件101疊層在支撐構件102的支撐體10被製造，且接著組成導線構件20的各層依序疊層在支撐體10的一表面與 另一表面每個上。於是，支撐體10可提供導線構件20額外的剛性，且使導線基板1的處理更方便。此外，支撐體10可防止導線構件20的變形。此外，導線構件20的剛性因為支撐體10而被改良，因此在導線基板1的製造過程中，導線構件20可不被彎曲或放出/收縮。因此，可提升導線構件20與支撐體10的層之間對齊的準確度。
即使在支撐體10被分成支撐構件101與支撐構件102之後，該些導線構件20仍可各別疊層在支撐構件101與支撐構件102上。因為包含在支撐構件101或支撐構件102的金屬箔片(銅箔)的層的數目以及包含在導線構件20的導線層的數目是相同的，所以導線基板1可平衡。於是，即使在片分切製程之後，支撐構件101或支撐構件102可提供導線構件20額外的剛性，使得導線基板1的處理更方便，且防止導線構件20的變形。
此外，在上述製造半導體封裝體的製程中，在安裝半導體晶片71到導線基板1的導線構件20上且以封裝樹脂73封裝半導體晶片71之後，支撐構件101或支撐構件102被移除。因此，即使在支撐構件101或支撐構件102被移除之後，因為封裝樹脂73的剛性，可維持半導體封裝體的剛性。
第二實施例
本發明的第二實施例繪示附著具有三個導線層在其上的支撐體的導線基板。在第二實施例中，類似的部件/元件會以類似於第一實施例的參考符號標示，而不進一步解釋。
第二實施例的導線基板結構
首先，說明第二實施例的導線基板1A的結構。圖7是剖面圖，繪示第二實施例的導線基板1A。圖7對應於圖1A的剖面圖。導線基板1A的平面圖可能類似於圖1B的平面圖。圖7的導線基板1A不同於圖1A的導線基板1，差異為支撐構件101被支撐構件103所取代，且導線構件20被導線構件20A所取代。
支撐構件103具有交錯疊層的金屬箔片與樹脂層來形成，使得一金屬箔片作為導線基板14的一側的最外層，以及另一金屬箔片做為導線基板14的另一側的最外層。更詳細的說，支撐構件103的結構為依序疊層的銅箔111、樹脂層121、銅箔112以及含載體的銅箔13。支撐構件103支撐導線構件20A且功能為改良整個導線基板1A的強度並減少導線基板1A的變形。
銅箔111與銅箔112可有相同或不同的層厚度。此外，樹脂層121與樹脂層122可有相同或不同的層厚度。支撐構件103可調整銅箔111、112的厚度與調整樹脂層121、122的厚度，以形成所需的強度。雖然在圖1A中包含在支撐構件101中的金屬箔片的層的數目為兩層(銅箔11與含載體的銅箔13)，但包含在支撐構件103的金屬箔片的數目是三層(銅箔111、銅箔112以及含載體的銅箔13)。
在導線構件20A、絕緣層24以及導線層25層疊在絕緣層22與防焊層26之間。更詳細的說，絕緣層24形成在絕緣層22的上表面，以覆蓋導線層23。絕緣層24的材料與厚度，舉例而言，和絕緣層22的材料與厚度相同。絕緣層24 可包括如二氧化矽的填充劑。
形成在絕緣層24一側的導線層25電性連接到導線層23。導線層25包括填充穿孔24x內部的穿孔導線，穿孔24x貫穿絕緣層24且暴露導線層23的上表面。導線層25也包括形成在絕緣層24上表面的導線圖案。穿孔24x是反轉截斷圓錐形凹口，包括防焊層26一側的開口以及由導線層23上表面形成的底面。防焊層26一側的開口的面積大於凹口底面的面積。穿孔24x的開口直徑，舉例而言，約為50微米至100微米。導線層25的材料和導線層21的材料相同，導線層25的導線圖案的厚度和導線層21的導線圖案的厚度相同。
防焊層26包括開口26x。部分的導線層25暴露在開口26x的底部。暴露在開口26x的底部的導線層25作用為電子元件安裝墊，可電性連接到如半導體晶片的電子元件。在此實施例中，設置開口26x以允許在作為墊的導線層25的側面與防焊層26的側面之間形成空間。二擇一地，開口26x可被形成，使得作為墊的導線層25的側面和防焊層26的側面彼此接觸。類似於第一實施例，開口26x可被形成，使得防焊層26覆蓋作為墊的導線層25的外邊緣。
製造導線基板與類似物的方法
下一步，說明根據本發明第二實施例的製造導線基板1A的方法。此外，說明其上安裝有半導體晶片的導線基板1A的半導體封裝體的製造方法。圖8至圖9B是示意圖，繪示第二實施例的導線基板1A的製程。圖10A至圖11是示意圖，繪示第二實施例的半導體封裝體的製程。
在圖8中繪示的製程，支撐體10A被製造。圖8是第二實施例的支撐體10A的剖面圖。圖8對應於圖2A的剖面圖。支撐體10A的平面圖類似於圖2B的平面圖。在此實施例中，半固化物作為樹脂層12。然而，根據支撐體10所需的強度，樹脂層12可由不包括玻璃布或類似物的樹脂形成。須注意的是，支撐構件103可參照為支撐體10A的第一層體，且支撐構件104可參照為支撐體10A的第二層體。
為了製造支撐體10A，準備兩個半固化物12a1、12a2。每個半固化物12a1、12a2是編織布料(如編織玻璃布、編織醯胺布)或非編織布料(如非編織玻璃布、非編織醯胺布)，預浸在如環氧型樹脂的樹脂內。每個半固化物12a1、12a2為半固化狀態(B-stage)。半固化物12a1、12a2的平面圖形狀可為長度與寬度尺寸約400釐米至500釐米的方形。每個半固化物12a1、12a2的厚度，舉例而言，約為10微米至50微米。然而，如上所述，半固化物12a1、12a2可具有不同厚度。
此外，準備兩銅箔111、112與包括薄箔片13a與厚箔片13b的兩個含載體的銅箔13。含載體的銅箔13的平面圖形狀可為方形，略為小於半固化物12a1、12a2的平面圖形狀。此外，銅箔111、112的平面圖形狀略小於含載體的銅箔13的平面圖形狀。每個銅箔111、112的厚度，舉例而言，約為7微米至50微米。然而，如上述，銅箔111、112可有不同的層厚度。含載體的銅箔13的厚度等尺寸可和上述那些相同。
接著，如圖8箭頭上方的區域所繪示，支撐構件104的最外層，即含載體的銅箔13，定位在薄箔片13a面朝下 的狀態。接著，在此狀態下，形成支撐構件104的半固化物12a2、銅箔112、半固化物12a1以及銅箔111依序疊層在含載體的銅箔13的厚箔片13b上。接著，形成支撐構件103的銅箔111、半固化物12a1、銅箔112以及半固化物12a2依序疊層在支撐構件104的銅箔111上。接著，形成支撐構件103的含載體的銅箔13疊層在支撐構件103的半固化物12a2上，其狀態為薄箔片13a面朝上。須注意的是，前述構件需依序疊層，並使其中心大體上彼此對齊。
接著，藉由從支撐構件103的含載體的銅箔13到支撐構件104的含載體的銅箔13的側面施加壓力，每個半固化物12a1、12a2被固化，其中每個半固化物12a1、12a2在真空中被加熱到約190℃到230℃的狀態。因此，如圖8箭頭下方的區域所繪示，半固化物12a1、12a2固化形成樹脂層121、122。於是，具有支撐構件104以及疊層在支撐構件104上的支撐構件103的支撐體10A被製造。
在支撐構件103中，含載體的銅箔13藉由埋入樹脂層122的上表面被附著到樹脂層122，其中銅箔112藉由埋入樹脂層122的下表面與樹脂層121的上表面而被附著到樹脂層121、122。含載體的銅箔13的上表面(薄箔片13a的上表面)由樹脂層122的上表面暴露出來，且含載體的銅箔13的側面被樹脂層122覆蓋。含載體的銅箔13的薄箔片13a的上表面可和樹脂層122的上表面共平面。此外，銅箔111藉由埋入樹脂層121的下表面被附著到樹脂層121。銅箔111的下表面由樹脂層121的下表面暴露出來，且銅箔111的側面被樹脂層121覆 蓋。銅箔111的下表面可和樹脂層121的下表面共平面。
為了方便起見，支撐構件104以不同於支撐構件103的參考符號標示。然而，支撐構件104具有和支撐構件103相同的層組態，和支撐構件103不同之處為支撐構件104相對於支撐構件103為垂直反轉。雖然支撐構件103的銅箔111的下表面(暴露表面)以及支撐構件104的銅箔111的上表面(暴露表面)彼此接觸，支撐構件103的銅箔111的下表面以及支撐構件104的銅箔111的上表面彼此不附著在一起。環繞支撐構件103的銅箔111的下表面之支撐構件103的樹脂層121的暴露表面的外周圍部分(不具有銅箔111形成在其上的區域)以及環繞支撐構件104的銅箔111的上表面之支撐構件104的樹脂層121的暴露表面的外周圍部分(不具有銅箔111形成在其上的區域)為彼此附著。
接著，藉由進行圖9A中繪示的製程(類似於圖3A至圖4B中的製程)，導線層與絕緣層交錯疊層在支撐體10A的一表面10a上(如在支撐構件103上)，以製造導線構件20A。此外，導線層與絕緣層交錯疊層在支撐體10A的另一表面10b上(如在支撐構件104上)，以製造導線構件20A。絕緣層24、穿孔24x以及導線層25可藉由類似於製造絕緣層22、穿孔22x以及導線層23的製程來製造。
接著，類似於第一實施例的圖4C中所繪示的製程，藉由進行圖9B中所繪示的片分切，製造多個導線基板1A。於是，藉由片分切製程，每片由支撐構件103與支撐構件104之間的附著部分被分離。因此，每個被分離片變成支撐構件103 的銅箔111的下表面以及支撐構件104的銅箔111的上表面只彼此接觸的狀態。結果，如圖9B所繪示，支撐構件103與支撐構件104容易在銅箔111彼此接觸之處被分離。因此，多個導線基板1A(在此實施例中，為20個導線基板)被製造。
如上述，為方便起見，支撐構件103與支撐構件104以不同參考符號標示。然而，支撐構件103與支撐構件104具有相同的層組態。因此，具有導線構件20A疊層在支撐構件103上的導線基板1A以及具有導線構件20A疊層在支撐構件104上的導線基板1A是相同的。
接著，在圖10A繪示的製程中，藉由黏著層75(如晶圓附著膜)，面朝上狀態的半導體晶片76被安裝在導線基板1A。接著，藉由接合線77，使用接合機器以接合由導線基板1A的開口26x暴露出來的導線層25到半導體晶片76的墊(未繪示)上。舉例而言，銅線或金線可作為接合線77。接著，封裝半導體晶片76與接合線77的封裝樹脂73，舉例而言，由使用封裝模的轉移成形法來形成。
接著，類似於圖5B中所繪示的製程，部分的支撐構件103在圖10B所繪示的製程中被剝離。於是，只有薄箔片13a維持在導線構件20A的下表面一側，而包含在支撐構件103中的其他構件(除了薄箔片13a的支撐構件103的其他構件)被移除。
接著，類似於圖5C中所繪示的製程，在圖10C所繪示的製程中，薄箔片13a被移除，以暴露出導線層21的下表面。因此，凸塊74可被形成在導線層21的下表面上。
接著，在圖11繪示的製程中，繪示在圖10C中的結構體沿著虛線C藉由切片機或類似物被切割。因此，可獲得多個半導體封裝體，其中每個半導體封裝體具有半導體晶片76安裝在導線構件20A上且被封裝樹脂73封裝。
類似於第一實施例的導線基板1，也形成導線基板1A，使得包含在支撐構件103或支撐構件104的金屬箔片(銅箔)的層的數目以及包含在導線構件20A的導線層的數目為相同(兩者皆有三層)。於是，導線基板1A可得到如導線基板1那些相同的效應。此外，在整個導線基板20A厚度與整個支撐構件103或整個支撐構件104的厚度之間的最佳關係類似於第一實施例中的那些。此外，樹脂層與絕緣層之間的最佳成分類似於第一實施例中的那些。
第二實施例的變形
第二實施例的變形繪示一導線基板，導線基板與其上具有三個導線層的支撐體附著。此外，第二實施例的變形例繪示一半導體封裝體(電子元件封裝基板)，具有不同於第二實施例的半導體封裝體的結構。在第二實施例的變形例中，類似的部件/元件會以類似於第一實施例與第二實施例的參考符號標示，而不再進一步說明。
圖12是剖面圖，繪示根據第二實施例變形例的導線基板1B。圖12對應於圖1A的剖面圖。導線基板1B的平面圖類似於圖1B的平面圖。
圖12的導線基板1B不同於導線基板1A(見圖7)，其中防焊層26的開口26x的位置與數目不同於導線基板 1A中的防焊層26的那些位置與數目。在此變形例中，形成開口26x，使得防焊層26覆蓋導線層25的外邊緣，以作為墊。開口26x，舉例而言，可排列為兩列，以圍繞導線層25的外邊緣的周圍。
圖13A至圖15繪示根據第二實施例變形例的製造半導體封裝體(電子元件封裝基板)的製程。在圖13A繪示的製程中，焊球95被安裝在由導線基板1B的開口26x暴露出來的導線層25上。導線基板1B藉由第二實施例的導線基板1A一樣的製程來製造。焊球95的結構為銅芯球95a的周圍被焊錫95b覆蓋。在此例中，焊球95與導線層25藉由熔化焊錫95b而接合，且接著會固化焊錫95b。
接著，在圖13B繪示的製程中，在後續製程中被接合到導線基板1B的導線基板80藉由廣為人知的方法被製造。導線基板80包括疊層在芯層81上表面的導線層82、絕緣層83、導線層84以及防焊層85。此外，選擇性暴露導線層84的開口85x、85y被形成在防焊層85中。暴露在開口85x中的導線層84是墊，連接到半導體晶片78。暴露在開口85y中的導線層84是墊，連接到導線基板1B。
導線基板80更包括疊層在芯層81下表面的導線層86、絕緣層87、導線層88以及防焊層89。此外，選擇性暴露導線層88的開口89x形成在防焊層89中。暴露在開口89x中的導線層88是墊，連接到外部連接終端。導線層82與導線層86藉由貫穿芯層81的貫穿導線90而電性連接。
接著，面朝下狀態的半導體晶片78被覆晶接合到 導線基板80。更詳細的說，進行回流製程或類似製程，由導線基板80的開口85x暴露出來的導線層84以及半導體晶片78的墊(未繪示)藉由凸塊72接合。接著，下填樹脂79施加在半導體晶片78與導線基板80之間。除了半導體晶片78以外的電子元件(如電容、電感)可安裝在導線基板80上。
接著，在圖13C繪示的製程中，導線基板1B與導線基板80藉由形成在其間的封裝樹脂98而接合。更詳細的說，導線基板1B被定位在導線基板80上，使得焊球95的焊錫95b接觸由開口85y暴露出來的導線層84的上表面。在定位導線基板1B的過程中，決定焊球95的銅芯球95a的直徑，以防止半導體晶片78與導線基板1B的防焊層26彼此接觸。
接著，當從導線基板1B到導線基板80施加壓力時，進行回流製程以熔化與固化焊錫95b。因此，導線層25與導線層84藉由焊球95被接合。在接合導線層25與導線層84時，焊錫95b固化在一狀態，其中銅芯球95a接觸導線層25下表面與導線層84上表面。因此，銅芯球95a可作為分隔物，使得導線基板1B與導線基板80之間的空間維持一既定值。接著，封裝樹脂98形成在導線基板1B與導線基板80之間，舉例而言，使用封裝模的轉移成形法。舉例而言，包括填充劑(所謂的成模樹脂)的熱固絕緣樹脂(如環氧型樹脂)可作為封裝樹脂98。
接著，在圖14A繪示的製程中，類似於第一實施例的圖5B中繪示的製程，部分支撐構件103被剝離。於是，只有薄箔片13a維持在導線構件20B的上表面一側，而包含在 支撐構件103的其他構件(除了薄箔片13a以外的支撐構件103的其他構件)被移除。接著，類似於圖5C中繪示的製程，在圖14B繪示的製程中，薄箔片13a被移除，以暴露出導線層21的上表面。此外，凸塊74可形成在由導線基板80的防焊層89的開口89x暴露出來的導線層88的下表面。
接著，在圖15繪示的製程中，繪示在圖14B中的結構體沿著虛線C使用切片機或類似物被切割。因此，得到多個半導體封裝體(電子元件安裝基板)，其中每個半導體封裝體具有安裝在導線基板80上的導線構件20B，導線基板80包括半導體晶片78。
類似於第一與第二實施例的導線基板1與1A，也形成導線基板1B，使得包含在支撐構件103或支撐構件104中的金屬箔片(銅箔)的層的數目以及包含在導線構件20B的導線層的數目是相同的(兩者皆有三層)。於是，導線基板1B可獲得導線基板1與1A相同的效應。此外，整個導線基板20B的厚度與整個支撐構件103的厚度或支撐構件104的厚度之間的最佳關係類似於第一與第二實施例中的那些關係。此外，在樹脂層與絕緣層之間的最佳成分類似於第一與第二實施例中的那些。
在此敘述的所有例子與條件語言是為了教示目的，為了幫助讀者了解本發明以及本發明者所貢獻可使先前技術進步的觀念，可理解為不受限於特別說明的例子與條件，也不受限於說明書中關於展示本發明的優越性與劣勢的此種例子的架構。雖然本發明的實施例已詳細說明，應了解的是在不 偏離本發明的精神與範疇下，各種的變化、代換以及修改可為之。
舉例而言，雖然銅箔與含載體的銅箔用於上述的實施例中，也可使用包括銅合金或如鋁、鎳或鋅金屬的金屬箔片或含載體的金屬箔片。
1‧‧‧導線基板
101‧‧‧支撐構件
10a‧‧‧表面
11‧‧‧銅箔
12‧‧‧樹脂層
13‧‧‧含載體的銅箔
13a‧‧‧薄箔片
13b‧‧‧厚箔片
20‧‧‧導線構件
21‧‧‧導線層
22‧‧‧絕緣層
22x‧‧‧穿孔
23‧‧‧導線層
26‧‧‧防焊層
26x‧‧‧開口
C‧‧‧虛線

Claims (10)

  1. 一種導線基板，包含：一支撐構件；以及一導線構件，形成在該支撐構件的一側上；其中該支撐構件包含彼此交錯的複數個金屬箔片與至少一樹脂層，使得該些金屬箔片之一作為該支撐構件該側上的一第一最外層，該些金屬箔片之另一作為該支撐構件另一側的一第二最外層，其中該第一最外層包含一厚箔片與一薄箔片，該薄箔片可剝離的附著在該厚箔片，其中該厚箔片接觸該至少一樹脂層，其中該薄箔片的一表面面對該支撐構件的一外側，其中該導線構件包含在該薄箔片上彼此交錯的複數個導線層與一絕緣層，以及其中該些金屬箔片的數目與該些導線層的數目相同。
  2. 如申請專利範圍第1項的導線基板，其中該樹脂層包含一第一樹脂層與一第二樹脂層，其中該厚箔片接觸該第一樹脂層，其中該薄箔片的該表面面對該支撐構件的該外側，其中該第二最外層的一表面接觸該第二樹脂層，且該第二最外層的另一表面面對該支撐構件的該外側，以及其中另一金屬箔片插入在該第一樹脂層與該第二樹脂層之間。
  3. 一種支撐體，包含： 一第一層體；以及一第二層體，與該第一層體附著；其中該第一層體包含彼此交錯的複數個金屬箔片與至少一樹脂層，使得該些金屬箔片之一作為該第一層體一側上的一第一最外層，該些金屬箔片之另一作為該第一層體另一側的一第二最外層，其中該第一最外層包含一厚箔片與一薄箔片，該薄箔片可剝離的附著在該厚箔片，其中該第一最外層埋入該至少一樹脂層，以暴露該薄箔片的一表面，其中該第二最外層埋入該樹脂層，使得該第二最外層的一側面被覆蓋且該第二最外層的另一表面被暴露，其中該第二層體具有和該第一層體的層組態相同的層組態，該第二層體的層組態相對於該第一層體為垂直反轉，其中該第一層體的該第二最外層的另一表面接觸該第二層體的一第二最外層的一暴露表面，其中該第一層體的該第二最外層的該另一表面的一外周圍部分以及該第二層體的該第二最外層的該暴露表面的一外周圍部分彼此附著。
  4. 如申請專利範圍第3項的支撐體，其中每個該第一與該第二層體中，該樹脂層包含一第一樹脂層與一第二樹脂層，該第一最外層埋入該第一樹脂層，以暴露該薄箔片的該表面，該第二最外層埋入該第二樹脂層，使得該第二最外層的該側面被覆蓋，且該第二最外層的該另一表面被暴露，以及 另一金屬箔片插入在該第一樹脂層與該第二樹脂層之間。
  5. 如申請專利範圍第4項的支撐體，其中該另一金屬箔片的部分的側面以及該另一金屬箔片的一表面被該第一樹脂層覆蓋，其中該另一金屬箔片的該側面的殘餘部分以及該另一金屬箔片的另一表面被該第二樹脂層覆蓋。
  6. 一種導線基板的製造方法，該方法包含：製造一支撐體，具有附著到一第二層體的一第一層體；製造一第一與一第二導線構件，包含：在該第一層體上製造該第一導線構件且在該第二層體上製造該第二導線構件，該第一與該第二導線構件每個包含彼此交錯的複數個金屬箔片與至少一樹脂層；以及藉由將該第一層體與該第二層體彼此分離，製造一第一與一第二導線基板，該第一導線基板具有疊層在該第一層體上的該第一導線構件，該第二導線基板具有疊層在該第二層體上的該第二導線構件；其中該支撐體的製造包含：形成該第一層體，使得該些金屬箔片之一作為在該第一層體的該側上的一第一最外層，且該些金屬箔片的另一作為該第一層體的另一側上的一第二最外層，其中該第一最外層包含一厚箔片與一薄箔片，該薄箔片可剝離的附著在該厚箔片，其中該第一最外層埋入該樹脂層，以暴露該薄箔片的一表面，其中該第二最外層埋入該樹脂層，使得該第二最外層的一 側面被覆蓋且該第二最外層的另一表面被暴露，其中製造該支撐體更包含：形成該第二層體，使得該第二層體具有和該第一層體的層組態相同的層組態，該第二層體的層組態相對於該第一層體為垂直反轉，其中該第一層體的該第二最外層的該另一表面接觸該第二層體的該第二最外層的一暴露表面，其中該第一層體的該第二最外層的該另一表面的一外周圍部分以及該第二層體的該第二最外層的該暴露表面的一外周圍部分彼此附著，其中製造該第一與該第二導線構件包含：在該第一最外層的該薄箔片上形成該第一導線構件，使得該第一層體的該些金屬箔片的數目以及該第一導線構件的該些導線層的數目相等，其中製造該第一與該第二導線構件包含：在該第二最外層的該薄箔片上形成該第二導線構件，使得該第二層體的該些金屬箔片的數目以及該第二導線構件的該些導線層的數目相等，其中製造該第一與該第二導線基板包含：在一厚度方向，切割該支撐體、該第一導線構件以及該第二導線構件，以及其中該支撐體、該第一導線構件以及該第二導線構件被切割成一區域，該區域比該第一層體的該第二最外層的該另一表面的該外周圍部分以及該第二層體的該第二最外層的該暴露表面的該外周圍部分彼此附著的區域更向內。
  7. 如申請專利範圍第6項的方法，其中在製造該支撐體時，該第二層體的該第一最外層被排列，使得該薄箔片面朝下，半固化狀態的一樹脂層與該第二最外層依序疊層在厚箔片上，以形成該第二層體，該第一層體的該第二最外層以及半固化狀態的另一樹脂層依序疊層在該第二層體的該第二最外層上，該第一層體的該第一最外層被排列，使得該薄箔片面朝上，當由該第一層體的第一最外層施加壓力到該第二層體的該第一最外層的一側，半固化狀態的該樹脂層藉由加熱樹脂層被固化。
  8. 如申請專利範圍第6項的方法，其中在每個該第一與該第二層體中，該樹脂層包含：一第一樹脂層與一第二樹脂層；其中製造該支撐體包含：在該第一樹脂層埋入該第一最外層，以暴露該薄箔片的該表面，在該第二樹脂層埋入該第二最外層，以覆蓋該第二最外層的該側表面且暴露該第二最外層的該另一表面，以及在該第一樹脂層與該第二樹脂層之間，設置另一金屬箔片。
  9. 如申請專利範圍第8項的方法，其中該支撐體的製造包含：以該第一樹脂層覆蓋該另一金屬箔片的一部分側面以及覆蓋另一金屬箔片的一表面，以該第二金屬箔片覆蓋該另一金屬箔片的該側面的殘餘部分以及覆蓋該另一金屬箔片的另一表面。
  10. 一種半導體封裝體的製造方法，該方法包含： 形成申請專利範圍第6項的該導線基板；在該第一導線構件上安裝一半導體晶片或安裝包括半導體晶片的另一導線基板；形成一封裝樹脂，該封裝樹脂封裝該半導體晶片；在形成該封裝樹脂之後，剝離該第一最外層的該厚箔片與該第一最外層的該薄箔片之間的一介面，使得只有該薄箔片維持在該第一導線構件的一側上以及移除該第一層體裡包含的其他構件；以及藉由蝕刻移除該薄箔片。
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