TW201608603A - 加熱器供電機構及平台溫度控制方法 - Google Patents
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Abstract
本發明之課題係對於平台溫度以各區域進行控制之際,對於區域構成進行可變控制。
係提供一種加熱器供電機構,係將載置基板之平台以複數加熱器來區域化,而可對各區域進行溫度控制者;具有:複數組加熱器用端子,係以一組加熱器用端子為一區段,以區段單位來連接於該複數加熱器之中一者;加熱器配線;以及配線構造,係使用該加熱器配線將該複數組加熱器用端子之間之至少一者以區段單位來連繋。
Description
本發明係關於一種加熱器供電機構及平台溫度控制方法。
半導體晶圓(以下稱為「晶圓」)以蝕刻等進行微細加工之半導體製造裝置中,載置晶圓之平台的溫度會對於蝕刻速率等程序結果造成影響。是以,有人提議於平台內部埋設加熱器,將加熱器予以加熱來控制平台溫度。例如,專利文獻1中揭示了一種裝置,為了改善伴隨靜電夾頭之單元化所致表面溫度不均一性,乃藉由外部電阻使得靜電夾頭之發熱量均一化來控制靜電夾頭之溫度。
靜電夾頭之溫度控制,係於內部埋入複數加熱器,將平台按照各加熱器而區域化,以各區域來控制平台溫度亦即進行所謂「多區域控制」,則可提高平台上之晶圓溫度的面內均一性。
先前技術文獻
專利文獻1 日本特開2003-51433號公報
另一方面,所生成之電漿分布會隨著電漿處理裝置之特性、程序條件等而改變。是以,為了提高平台內之面內均一性,以因應於所生成之電漿分布來可變控制區域構成為佳。
例如,當平台內側之電漿分布具均一性,而外側則容易變得不均一之情況,可藉由以內側區域寬廣、外側區域狹窄的方式控制區域構成(各區域之配置)以提高平台內之面內均一性。相反地,當平台外側之電漿分布具均
一性,而內側容易變得不均一之情況,則以外側區域寬廣、內側區域狹窄的方式來改變區域構成為佳。
但是,以往為了改變區域構成,必須改變埋入於靜電夾頭內部之複數加熱器的配置。從而,必須重新製作在因應於所希望之區域構成的位置處形成了複數加熱器之陶瓷燒結體。
針對上述課題,一觀點之目的在於:對於依照各區域來控制平台溫度之際的區域構成進行可變控制。
為了解決上述課題,依據一態樣係提供一種加熱器供電機構,係將載置基板之平台以複數加熱器來區域化,而可對各區域進行溫度控制者;具有:複數組加熱器用端子,係以一組加熱器用端子為一區段,以區段單位來連接於該複數加熱器之中一者;加熱器配線;以及配線構造,係使用該加熱器配線將該複數組加熱器用端子之間之至少一者以區段單位來連繋。
依據一態樣,可對於依照各區域來控制平台溫度之際的區域構成進行可變控制。
1‧‧‧電漿處理裝置
10‧‧‧腔室
12‧‧‧平台
13‧‧‧保持板
28‧‧‧排氣裝置
38‧‧‧淋灑頭
40‧‧‧靜電夾頭
44‧‧‧交流電源
75‧‧‧加熱器
77‧‧‧加熱器濾波器
91‧‧‧供電部蓋體
93‧‧‧配線構造
93a‧‧‧C狀構件
100‧‧‧加熱器供電機構
S1~S8‧‧‧加熱器用端子
L‧‧‧加熱器配線
圖1係一實施形態之電漿處理裝置之縱截面圖。
圖2係顯示一實施形態之加熱器供電機構一例之圖。
圖3係顯示一實施形態之加熱器用端子以及供電部蓋體構造一例之圖。
圖4係顯示一實施形態之加熱器供電機構之配線構造之詳細。
圖5係顯示一實施形態之區域構成之適中化一例之圖。
圖6係顯示一實施形態之平台溫度控制方法一例之流程圖。
圖7係顯示一實施形態之各裝置之區域構成一例之表。
以下,針對實施本發明之形態參見圖式來說明。此外,本說明書以及圖式中,針對實質相同構成係賦予相同符號而省略重複說明。
〔電漿處理裝置之全體構成〕
首先,針對本發明之一實施形態之電漿處理裝置1之全體構成,參見圖1來說明。圖1係顯示本發明之一實施形態之電漿處理裝置之縱截面。本實施形態中,在電漿處理裝置1之一例方面舉出了電容耦合型電漿蝕刻裝置。電漿處理裝置1具有例如表面經耐酸鋁處理(陽極氧化處理)過的鋁所構成之圓筒形腔室(處理容器)10。腔室10為接地,於內部處理室對晶圓W進行蝕刻等電漿處理。
於腔室10之內部設有載置晶圓W之平台12。平台12具有靜電夾頭40與保持靜電夾頭40之保持板13。保持板13係由樹脂等絕緣性構件所構成。於保持板13之下面設有加熱器配線等配線構造93。保持板13係經由絕緣性之保持部14而被支撐部15所支撐著。藉此,平台固定於腔室10之內部。
於平台12之上面設有以靜電吸附力來保持晶圓W之靜電夾頭40。靜電夾頭40乃將由導電膜所構成之電極40a夾入一對絕緣層40b(或是絕緣片)之間者,直流電壓源42經由開關43而連接於電極40a。靜電夾頭40係藉由來自直流電壓源42之電壓而以庫倫力將晶圓W吸附保持於靜電夾頭上。於靜電夾頭40之周緣部配置有例如由矽、石英所構成之聚焦環18,以提高蝕刻之面內均一性。
用以激發電漿之第1高頻電源31係經由匹配器33而連接於平台12,另用以將離子拉引至晶圓W側之第2高頻電源32則經由匹配器34而連接於平台12。例如,第1高頻電源31係將適合在腔室10內生成電漿之頻率、例如60MHz之高頻電力施加於平台12。第2高頻電源32係將適合將電漿中離子拉引至平台12上之晶圓W的較低頻率、例如0.8MHz之高頻電力施加於平台12。如此一來平台12將載置晶圓W並發揮下部電極之機能。
於靜電夾頭40中埋入有加熱器75a、75b、75c、75d、75e(以下也總稱為「加熱器75」)。加熱器75可取代埋入靜電夾頭40內而改為貼附於靜電夾頭40之內面。加熱器75之個數只要為複數即可,可為任意數量。
加熱器75係經由配線構造93所形成的配線而和供電部蓋體構造76連接。供電部蓋體構造76係連接於加熱器濾波器77a、77b、77c、77d、77e、77f(以下也總稱為「加熱器濾波器77」)。加熱器濾波器77係由例如線圈所形成,藉由將第1高頻電源31以及第2高頻電源32所施加的高頻電力去除以保護交流電源44。
此外,供電部蓋體構造76以及加熱器濾波器77基於說明之方便起見係配至於圖1所示位置處,但不限於此,也可以同心圓狀來配置加熱器濾波器77。藉由相關構成,加熱器75會經由供電部蓋體構造76以及加熱器濾波器77而連接於交流電源44。藉此,加熱器75從交流電源44被供給電流。針對以此方式對加熱器75進行供電之加熱器供電機構100之詳細將於後述。依據相關構成,平台12係以複數加熱器75來區域化,可針對平台12之各區域進行溫度控制。使用複數加熱器75對各區域進行溫度控制,則可提高平台12上之晶圓溫度的面內均一性。此外,平台12之溫度控制係基於來自控制部48之指令來進行。控制部48具有未圖示之CPU、ROM、RAM,依照於RAM等所記憶之配方所設定之順序或是記憶於表之數據來控制蝕刻處理、溫度控制處理。此外,控制部48之機能可使用軟體來動作而實現,也可使用硬體來動作而實現。
於腔室10之天花板部,淋灑頭38係做為接地電位之上部電極而設置其該處。藉此,來自第1高頻電源31之高頻電力以電容方式施加於平台12與淋灑頭38之間。
天花板部之淋灑頭38具有:具多數氣體通氣孔56a之電極板56、以及將電極板56以可裝卸方式加以支撐之電極支撐體58。氣體供給源62係經由氣體供給配管64而從氣體導入口60a對淋灑頭38內供給氣體。氣體係從多數氣體通氣孔56a導入腔室10內。於腔室10之周圍配置著以環狀或是同心圓狀延伸之磁石66,藉由磁力對於在上部電極以及下部電極間之電漿生成空間所生成之電漿進行控制。
於腔室10之側壁與支撐部15之間形成有排氣流路20。排氣流路20上安裝著環狀擋板22。於排氣流路20之底部設有排氣管26(形成排氣口24),排氣管26則連接於排氣裝置28。排氣裝置28係由渦輪分子泵、乾式泵等真空泵
所構成,將腔室10內之處理空間減壓至既定真空度。於腔室10之側壁安裝著對於晶圓W之搬出入口進行開閉之搬送用閘閥30。
於相關構成之電漿處理裝置1進行蝕刻等處理之際,首先,晶圓W在被保持於未圖示之搬送臂上的狀態下,從開口著的閘閥30搬入腔室10內。晶圓W係於靜電夾頭40之上方以未圖示之推動銷所保持,一旦推動銷下降則被載置於靜電夾頭40上。閘閥30係在搬入晶圓W後關閉。腔室10內之壓力係藉由排氣裝置28減壓至設定值。氣體從淋灑頭38以淋灑狀導入腔室10內。既定功率之高頻電力施加於平台12。此外,對靜電夾頭40之電極40a施加來自直流電壓源42之電壓,則晶圓W被靜電吸附於靜電夾頭40上。所導入之氣體以高頻電力來電離、解離而生成電漿,藉由電漿之作用來對晶圓W進行蝕刻等處理。
電漿蝕刻結束後,晶圓W被保持於搬送臂上而搬出至腔室10之外部。藉由反覆此處理來連續地對晶圓W進行電漿處理。以上,針對本實施形態之電漿處理裝置1之全體構成做了說明。
〔加熱器供電機構〕
其次,針對本實施形態之加熱器供電機構100之構成,參見圖2來說明。圖2係顯示一實施形態之加熱器供電機構100之一例。圖2(a)係從上面側觀看加熱器供電機構100之立體圖,圖2(b)係從下面側觀看加熱器供電機構100之立體圖。
加熱器供電機構100具有:複數組加熱器用端子S1~S8(以下也總稱為「加熱器用端子S」)、複數加熱器配線L、以及具有C狀構件93a之配線構造93。複數組加熱器用端子S1~S8係由導電性構件所構成,在C狀構件93a之上部隔離配置著。加熱器配線L係將加熱器用端子S間之至少一者加以連接。C狀構件93a係由樹脂所形成,設置於保持板13之下面。
於C狀構件93a之上面,如圖2(a)所示般,以二個端子為1組而配置8組的加熱器用端子S1~S8。C狀構件93a之上面成為配線構造93之第1層,加熱器配線L爬在上面2條溝槽中,將所希望之加熱器用端子S間做連結。藉此,在C狀構件93a之上面,8組加熱器用端子S1~S8當中的2組以上之加熱器用端子
S係以區段(segment)單位來並連。圖2(a)中,加熱器用端子S1~S4係以加熱器配線L來連接著。
此處,所謂「區段」意指為了對一個加熱器75供給電流所必要之加熱器用端子之最小單位。此外,所謂「區域」意指當平台12以複數加熱器75進行溫度控制之際,控制在相同溫度帶之領域。
例如,所謂加熱器用端子S1、S2間以區段單位來連接,意指一組(二個)加熱器用端子S1之一者與一組(二個)加熱器用端子S2之一者做連接,而一組加熱器用端子S1之另一者與一組加熱器用端子S2之另一者做連接。藉此,連接於一組加熱器用端子S1之加熱器75與連接於一組加熱器用端子S2之加熱器75係做為同一區域而被控制在相同溫度帶。如此一來,本實施形態可藉由配線構造93來可變控制區域構成。
本實施形態之加熱器用端子S1~S8係以二個加熱器用端子做為一區段而設置8組,但加熱器用端子S之組數不限於此,只要為2組以上即可,可設置任意組。
圖3(a)係圖2(a)之A-A截面,顯示一區段之加熱器用端子S3及其附近之截面。二個加熱器用端子S3係和插口(jack)端子103嵌合,而嵌入於絕緣性構件之固定盒102。固定盒102係藉由螺絲104而固定於C狀構件93a。二個加熱器用端子S3之上部係貫通固定盒102而露出於固定盒102之上部,和埋設於靜電夾頭(ESC:Electrostatic Chuck)40之加熱器75連接。
如圖2(b)所示般,於C狀構件93a之下面,一組供電部蓋體91係隔離設置複數組。C狀構件93a之下面成為配線構造93之第2層,加熱器配線L爬在下面2條溝槽中,配置於上面而貫通C狀構件93a之加熱器用端子S之其中一端部與配置於下面之供電部蓋體91之一者係以區段單位做連接。藉此,因著爬在配線構造之第1層與第2層之加熱器配線L,加熱器用端子S1~S4得連接於供電部蓋體91。
圖2(a)中,加熱器用端子S1~S4係以加熱器配線L做連接,但利用加熱器配線L之加熱器用端子S間之連接只要8組加熱器用端子S1~S8間至少一者連接著即可。藉此,於C狀構件93a之上面,8組加熱器用端子S1~S8當中的2組以上之加熱器用端子S係以區段單位來並連。
本實施形態之配線構造93,一組加熱器用端子S係連接於一個加熱器75或是複數加熱器75。從而,若複數組加熱器用端子S藉由加熱器配線L來連接,則待經由該複數組加熱器用端子S而連接之所有的加熱器75將會構成被控制在相同溫度帶之同一區域。亦即,隨著加熱器配線L是否以區段單位來連接加熱器用端子間,並連之加熱器75將會改變,被控制在相同溫度帶之同一區域之構成會改變。從而,依據本實施形態之配線構造93,8組加熱器用端子S1~S8間以區段單位藉著加熱器配線L來連繫,則可對平台12之區域構成做可變控制。
圖3(b)為圖2(b)之B-B截面,顯示二個插座90以及供電部蓋體構件91之截面以及加熱器配線L之一部分。供電部蓋體91係藉由固定構件94而被支撐於C狀構件93a之下面。插座90係由導電性構件所構成,供電部蓋體91係藉由絕緣性構件所構成。供電部蓋體91係覆蓋插座90。
圖2(a)以及圖2(b)中係利用保持板13下之空間,在第1層處加熱器用端子S3間係以加熱器配線L來連接,在第2層處加熱器用端子以及加熱器濾波器77間係以加熱器配線L來連接。圖3(b)係顯示將二個加熱器用端子S3之下端部S3a與插座90之上端部90a做連接之加熱器配線L之一部分。插座90中插入有圖1所示加熱器濾波器77之插頭76。
藉此,加熱器用端子S側(第1層側)之加熱器75與插座側(第2層側)之加熱器濾波器77係經由加熱器配線L而連接,形成來自交流電源44之電流流往加熱器75之供電線路。
圖4係顯示本實施形態之加熱器供電機構100之配線構造93之詳細。圖4所示C狀構件93a之俯視圖中,加熱器配線L將加熱器用端子S1、S2間、加熱器用端子S2、S3間、加熱器用端子S3、S4間以區段單位來連接。
圖4(b)係圖4(a)所示C狀構件93a以虛線包圍之配線構造93之側視圖。配線構造93係於保持板13下的空間使用了加熱器配線L之加熱器用端子S間的連接構造。配線構造93能以樹脂之盒體99來覆蓋。
配線構造93成為二層構造,如前述般,第1層中加熱器配線L係將複數組加熱器用端子S間之至少一者以區段單位來連繫者。圖4(b)所示例,第1層之加熱器配線L係將加熱器用端子S1~S4間以區段單位來連繋。第2層之加
熱器配線L係將加熱器用端子S連繫於加熱器濾波器77。圖4(b)所示例,第2層之加熱器配線L係連繫加熱器用端子S4與加熱器用端子S4之附近之加熱器濾波器77。藉此,來自交流電源44之電流被供給至分別連接於加熱器用端子S1、S2、S3、S4的複數加熱器75處。藉著以加熱器配線L來並連之複數加熱器75而受到溫度控制之區域會構成同一區域。依據相關構成,按照本實施形態之加熱器供電機構100,由於8組加熱器用端子S1~S8間之至少一者係使用加熱器配線L以區段單位連繋,可對平台12之區域構成進行可變控制。
此外,上述實施形態中,配線構造93係將在C狀構件93a隔離設置之8組加熱器用端子S間之至少一者以加熱器配線L做連繋。但是,設置配線構造93之加熱器用端子S的構件不限於C狀構件93a,也可為例如以環狀、環狀之一部分呈現開口之形狀或是扇狀所構成之構件。此情況之環狀可為橢圓也可為正圓。
〔區域構成之適中化〕
其次,針對本實施形態之區域構成之適中化,參見圖5來說明。圖5係顯示一實施形態之區域構成之適中化一例。圖5(a)係顯示電漿處理裝置1為圖1之電容耦合型電漿(CCP(Capacitively Coupled Plasma)裝置之時的區域構成一例。圖5(b)係顯示電漿處理裝置1為使用輻線狹縫天線之CVD(Chemical Vapor Deposition)裝置之時的區域構成一例。
於腔室10內所生成之電漿分布會隨電漿處理裝置1之特性、程序條件等而改變。是以,本實施形態之加熱器供電機構100係進行配線構造93中加熱器配線L之替換連繋,適中化成為符合所生成之電漿分布的區域構成。
例如,CCP裝置之情況,平台內側之電漿分布具均一性,而外側容易變成不均一。於此情況,係以內側區域寬廣、外側區域狹窄的方式來控制區域構成(各區域之配置)。
具體而言,如圖5(a-1)所示般,加熱器配線L係連接加熱器用端子S5、S6。在圖5(a-2)之中間(Middle)之圓所示供電部蓋體91連接圖5(a-3)之加熱器濾波器77b。藉此,加熱器用端子S5、S6與加熱器濾波器77b受到連,連接於加熱器用端子S5、S6之複數加熱器75被控制在同一溫度帶。
圖5(a-2)之邊緣(Edge)之圓所示供電部蓋體係連接圖5(a-3)之加熱器濾波器77c。藉此,加熱器用端子S7與加熱器濾波器77c受到連接。加熱器用端子S8在圖5(a-2)之最邊緣(V.Edge)之圓所示供電部蓋體91係連接圖5(a-3)之加熱器濾波器77d。藉此,加熱器用端子S8與加熱器濾波器77d受到連接。
藉此,最邊緣(最外周區域)以及邊緣區域相較於中間區域來得狹窄。
另一方面,如圖5(a-1)所示般,加熱器配線L係連接加熱器用端子S1~S4。圖5(a-2)之中央(Center)之圓所示供電部蓋體係連接圖5(a-3)之加熱器濾波器77a。藉此,連接於加熱器用端子S1~S4之複數加熱器75被控制在同一溫度帶。
如此般在圖5(a)之CCP裝置之情況,可控制成為內周側之中央區域寬廣、外周側之邊緣、最邊緣區域狹窄、中間區域較邊緣區域以及最邊緣區域來得寬廣之區域構成。藉此,可提高平台12之溫度均一性。此外,當於聚焦環18配置有加熱器之情況,係於聚焦環(F/R)18之加熱器連接加熱器濾波器77e。
當使用圖5(b)之輻線狹縫天線之CVD裝置之情況,平台12之外側的電漿分布具均一性,而內側容易成為不均一。於此情況,以外側區域寬廣、內側區域狹窄的方式來可變控制區域構成為佳。
是以,於此情況,如圖5(b-1)所示般,加熱器配線L係連接加熱器用端子S7、S8。此外,加熱器配線L係連接加熱器用端子S5、S6。藉此,連接於加熱器用端子S7、S8之複數加熱器75(對應於最邊緣區域)被控制在同一溫度帶,連接於加熱器用端子S5、S6之複數加熱器75(對應於邊緣區域)被控制在同一溫度帶。
此外,加熱器配線L係連接加熱器用端子S2~S4。藉此,連接於加熱器用端子S2~S4之複數加熱器75(對應於中間區域)被控制在同一溫度帶。此外,並無並連於加熱器用端子S1之加熱器用端子,連接於加熱器用端子S1之加熱器75係對應於中央區域。
如此般使用圖5(b)之輻線狹縫天線之CVD裝置之情況,可控制成為內周側之中央區域為狹窄、中間~最邊緣區域為寬廣之區域構成。藉此,可提高
平台12之溫度均一性。
此外,關於朝圖5(b-2)以及圖5(b-3)所示加熱器濾波器77之連接由於和朝圖5(a-2)以及圖5(a-3)所示加熱器濾波器77之連接同樣,故省略說明。
〔平台溫度控制方法〕
其次,針對本實施形態之平台溫度控制方法,參見圖6以及圖7來說明。圖6係顯示一實施形態之平台溫度控制方法一例之流程圖。圖7係顯示一實施形態之各裝置的區域構成一例之表。例如,如圖5(a)所說明般,當電漿處理裝置1為CCP裝置之情況,並連之加熱器用端子S在中央區域為加熱器用端子S1~S4、在中間區域為加熱器用端子S5,S6一事係事先設定於表中。此外,並無並連於邊緣區域之加熱器用端子S7以及最邊緣區域之加熱器用端子S8的加熱器用端子。
圖7中,舉出3種電漿處理裝置為例來例示區域構成,但於其他電漿處理裝置也可因應於其裝置之電漿分布特性來決定區域構成而記憶於表中。此外,電漿處理裝置1之種類(特性)為晶圓受到電漿處理之條件的一例。在晶圓受到電漿處理之條件的其他例方面,可舉出程序條件(氣體種類、氣體流量、溫度、壓力、高頻電力之功率等)。因應於此等例所舉出之「晶圓受到電漿處理之條件」將適中化之區域構成事先記憶於表中,基於該表如圖6之流程圖所示般來可變控制區域構成。表係記憶於RAM等記憶部。
一旦開始圖6之處理,則控制部48會判定為電漿處理裝置1之組裝時或是維修時(步驟S10)。當為電漿處理裝置1之組裝或是維修時之情況,控制部48會基於在RAM等記憶體中所記憶之表來決定加熱器用端子S間之連接部位以成為因應於裝置之區域構成(步驟S12)。控制部48係以使用加熱器配線L將加熱器用端子S間以區段單位做連繋的方式進行控制(步驟S14)。
使用加熱器配線L之加熱器用端子S間的連接以在連繫加熱器用端子S間的加熱器配線L設置切換機構而藉由開關的開啟與關閉來自動連接為佳。
以上,依據本實施形態之加熱器供電機構100,藉由對配線構造93內之加熱器配線L做替換連繋,可將相同平台12控制成為不同區域構成。例如,
當連接於加熱器用端子S間的二個加熱器75配置在周向之情況,依據本實施形態,藉由控制加熱器用端子S間的連接,可在周向上可變控制區域寬度。亦即,可在周向上控制區域構成。
另一方面,當連接於加熱器用端子S間之二個加熱器75以徑向配置之情況,依據本實施形態,可藉由控制加熱器用端子S間之連接而於徑向上可變控制區域寬度。亦即,可在徑向上控制區域構成。
以上,雖依據上述實施形態說明了加熱器供電機構以及平台溫度控制方法,但本發明不限於上述實施形態,可在本發明之範圍內做各種變形以及改良。此外,上述實施形態以及變形例可在不致矛盾的範圍內進行組合。
例如,本發明之加熱器供電機構不僅是適用於電容耦合型電漿(CCP:Capacitively Coupled Plasma)裝置,也可適用於其他電漿處理裝置。在其他電漿處理裝置方面也可為使用感應耦合型電漿(ICP:Inductively Coupled Plasma)、輻線狹縫天線之CVD(Chemical Vapor Deposition)裝置、螺旋波激發型電漿(HWP:Helicon Wave Plasma)裝置、電子迴旋共振電漿(ECR:Electron Cyclotron Resonance Plasma)裝置等。
此外,以本發明之電漿處理裝置所處理之基板不限於晶圓,也可為例如平板顯示器(Flat Panel Display)用之大型基板、EL元件或是太陽電池用之基板。
91‧‧‧供電部蓋體
93‧‧‧配線構造
93a‧‧‧C狀構件
100‧‧‧加熱器供電機構
102‧‧‧固定盒
104‧‧‧螺絲
L‧‧‧加熱器配線
S1~S8‧‧‧加熱器用端子
Claims (6)
- 一種加熱器供電機構,係將載置基板之平台以複數加熱器來區域化,而可對各區域進行溫度控制者;具有:複數組加熱器用端子,係以一組加熱器用端子為一區段,以區段單位來連接於該複數加熱器之中一者;加熱器配線;以及配線構造,係使用該加熱器配線將該複數組加熱器用端子之間之至少一者以區段單位來連繋。
- 如申請專利範圍第1項之加熱器供電機構,其中使用該配線構造內之該加熱器配線的該複數組加熱器用端子間之連接係以區段單位來替換連繋。
- 如申請專利範圍第1或2項之加熱器供電機構,其中該配線構造係將在以環狀、環狀之一部分呈開口之形狀或是扇狀所構成之構件處所隔離設置之複數組加熱器用端子間之至少一者使用該加熱器配線來做連繋。
- 如申請專利範圍第1至3項中任一項之加熱器供電機構,其中該配線構造係設置在將該平台之靜電夾頭加以保持之保持板下的空間處。
- 一種平台溫度控制方法,係使用加熱器供電機構來進行控制,該加熱器供電機構係將載置基板之平台以複數加熱器來區域化,而可對各區域進行溫度控制者;該加熱器供電機構具有複數組加熱器用端子,係以一組加熱器用端子為一區段,以區段單位來連接於該複數加熱器之中一者;該平台溫度控制方法包含下述製程:決定該複數組加熱器用端子間之連接部位之製程;以及將該決定之複數組加熱器用端子間之連接部位使用加熱器配線而以區段單位做連繋,藉以控制該平台之區域構成之製程。
- 如申請專利範圍第5項之平台溫度控制方法,其中決定該連接部位之製程係基於事先記憶於記憶部之因應於基板所受電漿處理之條件的區域構成,來決定該複數組加熱器用端子間之連接部位; 控制該區域構成之製程係將該決定之複數組加熱器用端子間之連接部位使用加熱器配線來以區段單位做替換連繋來可變控制該平台之區域構成。
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TWI731463B (zh) * | 2019-11-06 | 2021-06-21 | 聚昌科技股份有限公司 | 側向擾流式高均勻度感應耦合電漿蝕刻機之製造方法及其結構 |
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US20170140957A1 (en) | 2017-05-18 |
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