TW201438120A - 晶片配置及製造晶片配置的方法 - Google Patents

晶片配置及製造晶片配置的方法 Download PDF

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Publication number
TW201438120A
TW201438120A TW103102721A TW103102721A TW201438120A TW 201438120 A TW201438120 A TW 201438120A TW 103102721 A TW103102721 A TW 103102721A TW 103102721 A TW103102721 A TW 103102721A TW 201438120 A TW201438120 A TW 201438120A
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Taiwan
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wafer
terminal substrate
contact
item
disposed
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TW103102721A
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TWI539536B (zh
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Ghassem Azdasht
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Pac Tech Gmbh
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
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Abstract

本發明係關於一種晶片配置（18）包含端子基板（12）及設置在端子基板上的複數個半導體基板，在特定晶片（1）中，其中設置在晶片的接觸表面上之端面（5）係連接至端子基板之接觸表面上之端面，其中晶片延伸平行於側向邊緣且晶片之接觸表面橫向於端子基板的接觸表面，其中通孔（13）設置在端子基板中，通孔係將設置在外部接觸側上的外部接觸（15）連接於端子基板之端面上形成作為內部接觸(14)之端面，其中相鄰於側向邊緣設置之晶片的端面係以重熔焊接材料沉積（16）的方式連接於端子基板的內部接觸。此外，本發明係關於一種用於製造晶片配置（18）的方法。

Description

晶片配置及製造晶片配置的方法 【0001】
本發明係關於一種晶片配置，其包括端子基板及設置在端子基板上的複數個半導體基板，其中，配置在半導體基板的接觸表面的端面連接到端子基板的接觸表面上的端面。
 【0002】
隨著電子裝置的微小化的提升，其中所使用的電子元件的積體密度上的需求也隨之提升。特別是應用於記憶體元件或擴充記憶體(memory extensions)，其典型地由透過共用接觸基板來電性接觸的複數個記憶晶片所組成。
【0003】
從德國專利申請號第196 26 126 A1之第1圖中示意性的示出的晶片配置是習知的，其以三明治的方式形成層疊的配置，一方面包含了交替排列的晶片1且中介地設置將用於層疊配置的機械黏附力的黏合層2，另一方面允許個別晶片1彼此明確界定間隔。在晶片的層疊配置的一側，提供配備了個別的導體路徑4之接觸導體基板3，導體路徑4允許了晶片1的端面5與端面6電性接觸，端面5與端面6分別劃定了層疊結構的頂端及底端，且層疊結構的端子接觸7作為晶片配置的外部接觸。焊接連接8係提供用於產生晶片1的端面5及接觸導體基板3的導體路徑4之間的電性接觸。
【0004】
有鑑於第1圖中所示晶片配置的複雜結構，很明顯地，晶片配置的生產亦相對的複雜，包含了複數個連續的方法步驟，這使得必須要使用不同的工具來製造晶片1的堆疊配置，晶片1排列在彼此的頂端且藉由黏合層2彼此間隔隔開、以及製造在晶片1的端面5及接觸導體基板3的導體路徑4之間的焊接連接8。
 【0005】
從先前技術水平起始，本發明的目標是提出一種可以輕易地製造的晶片配置，並提出一種允許輕易製造晶片配置的方法。
【0006】
所述目標係藉由具有所述特徵的晶片配置及製造具有所述特徵的晶片配置的方法來達成。
【0007】
在根據本發明的晶片配置中，晶片延伸平行於側向邊緣且晶片之接觸表面橫向於端子基板的接觸表面，其中通孔設置在端子基板中，通孔將設置在外部接觸側上的外部接觸連接於在端子基板的接觸表面上形成為內部接觸之端面，其中被設置相鄰於側向邊緣的半導體基板的末端表面係藉由重熔焊接材料沉積的方式連接於端子基板的內部接觸。根據本發明的晶片配置因此允許晶片的列配置，晶片僅在側向邊緣被連接於端子基板。
【0008】
優選地，端子基板的內部接觸及晶片的端面以形成空間角落這樣的方式相對彼此設置，使得僅被設置在端子基板的內部接觸上之焊接材料沉積得以重熔，允許晶片的端面的浸潤(wetting)。
【0009】
較佳地，形成在內部接觸及端面之間的空間角落具有在30°及150°之間的角落角度，其中60°及120°之間且特別是90°的角落角度允許晶片配置特別緊密地形成。
【0010】
若晶片的側向邊緣及端子基板的接觸表面彼此藉由填充間隙隔開，所謂的填充間隙可以模制材料填充從而產生在晶片及端子基板之間特別耐用的機械性連接。
【0011】
在根據本發明用於製造包含端子基板及設置在端子基板上的複數個半導體基板的晶片配置的方法中，在特定的晶片中，其中設置在半導體基板的接觸表面的端面連接於端子基板的接觸表面上的端面，以設置相鄰於側向邊緣的晶片之端面係分配至端子基板的端面這樣的方式，晶片平行於側向邊緣放置且晶片之接觸表面橫向於端子基板的接觸表面，形成內部接觸且藉由形成在端子基板內的通孔的手段使內部接觸連接於設置在端子基板的外部接觸側上的外部接觸，且內部接觸藉由重熔焊接材料沉積的方式被依序地連接於端面。
【0012】
若焊接材料沉積被設置在端子基板的內部接觸上，從而產生在晶片的端面及端子基板的內部接觸之間的連接，可省略焊接材料於複數個晶片的應用。取而代之的是焊接材料沉積僅需被應用在端子基板的內部接觸，在本文中，其另外可能被設置在適合用於置放晶片於其上的位置。
【0013】
若焊接材料沉積在半導體基板被放置在端子基板的接觸表面上之前被設置在端子基板的內部接觸上，焊接材料的應用不受預先放置晶片的阻礙。
【0014】
若晶片在端子基板的接觸表面上的放置是藉由放置工具的手段以放置工具拾起晶片，相對端子基板對應於所需位置設置，且被固持在所述位置的方式進行，是特別有利的。
【0015】
優選地，晶片以填充間隙形成在晶片之側向邊緣及端子基板的接觸表面之間的方式固持在位置上。
【0016】
特別優選的是，若晶片以端子基板的內部接觸及晶片的端面相對於彼此以其間形成角落角度的方式設置的形式放置。
【0017】
優選地，晶片是由負壓的手段固持。
【0018】
若用於製造端子基板之內部接觸及晶片的端面之間的連接的焊接材料沉積的重熔是在晶片放置時發生，則放置和重熔可以在共同方法步驟中進行。
【0019】
優選地，焊接材料沉積藉由雷射能量的手段以雷射輻射穿過放置工具衝擊的方式重熔焊接材料沉積。
【0020】
為了特別容易形成晶片的列配置，晶片在端子基板的接觸表面上的放置以及晶片的端面與端子基板的內部接觸的連接是以平行於端子基板的接觸表面的放置方向，一個接一個將晶片放置及連接於端子基板的這種方式連續地進行。
1．．．晶片
2．．．黏合層
3．．．接觸導體基板
4．．．導體路徑
5、6．．．端面
7．．．端子接觸
8．．．焊接連接
9．．．放置工具
10．．．窗口開口
11．．．定位框架
12．．．端子基板
13．．．通孔
14．．．內部接觸
15．．．外部接觸
16．．．焊接材料沉積
17．．．模制材料
18．．．晶片配置
20．．．填充間隙
21．．．側向邊緣
L．．．雷射輻射
U．．．負壓
【0021】
下文中，在附圖的幫助下對本發明進行更詳細地解釋，其中根據本發明用於製造晶片配置的方法係特別詳細地揭露。在圖式中：
【0022】
第1圖係根據先前技術示出晶片配置；
【0023】
第2圖示出適合用於晶片配置的製造的放置工具的例示性實施例；
【0024】
第3圖示出放置工具的縱剖視圖；
【0025】
第4圖示出晶片配置的端子基板；
【0026】
第5圖示出在第4圖中所示的端子基板上的晶片的放置；
【0027】
第6圖示出繼續在放置方向上設置晶片在端子基板上；
【0028】
第7圖示出設置有模製化合物的晶片配置。
 【0029】
第4圖至第7圖，示出了用於生產晶片配置18連續的方法步驟，晶片配置18設置有模制材料17，從而形成殼體，其中，首先提供如在第4圖中所示之端子基板12，端子基板12配備了通孔13，以製造設置在端子基板12的接觸表面上的內部接觸14及設置在端子基板12的外部接觸側的外部接觸15之間的導電連接。
【0030】
在第2圖及第3圖中，放置工具9如所示般係用於製造第7圖中以等軸視圖及剖視圖所示之晶片配置18。在導管的末端，放置工具9具有具定位框架11之窗口開口10，如第3圖中所示，允許晶片1在窗口開口10中的精確位置。放置工具9的導管允許容納在定位框架11中的晶片1與負壓U的作用力(impingement)，且允許晶片1與雷射輻射L的碰撞(impingement)。
【0031】
負壓U使晶片1被牢固地固持在定位框架11上。晶片1與雷射輻射L的碰撞使晶片1的矽體能夠加熱，且因此端面5亦以界定形式設置在晶片1的接觸表面。
【0032】
如第4圖所示，端子基板12的內部接觸14設置有焊接材料沉積16，以便為了隨後與晶片1的端面5接觸作準備。
【0033】
如第5圖跟第6圖所示，開始將晶片1設置在端子基板12之邊緣上，個別的晶片1接著依序接觸，其中各別晶片1藉由放置工具9由負壓U的手段拾取，且以內部接觸14及端面5相對彼此設置使得其形成空間角落的方式相對於端子基板12設置在對應所期望的位置，其中，在目前的情況下，90°的角落角度α分別形成在內部接觸14及端面5之間。在這種相對位置下，至少一部分焊接材料沉積16藉由能量源發射雷射輻射L的方式重熔，使得在短暫重熔之後，焊接連接8藉由焊接材料沉積16快速凝固而形成。
【0034】
隨後，如第6圖中所示，其他晶片1一個接一個連續地以放置工具9的手段放置且連接，從而形成晶片1的列配置。在此過程中，晶片1被放置，使得填充間隙20形成在晶片的側向邊緣21及端子基板12之接觸表面之間，一旦完成晶片1之列排列之後，填充間隙20以模制材料17填充，如第7圖所示。
【0035】
放置工具9因此同時允許端子基板12上的晶片1的界定定位及焊接材料沉積16的重熔以製造在端子基板12之內部接觸14及晶片1的端面5之間的焊接連接8。在這種方式中，晶片1在端子基板12上的配置，及導電連接的製造係藉由焊接材料沉積16的重熔而進行，從而在共同方法步驟中形成焊接連接8，而不是由兩種不同工具的手段依序進行，如在參照第1圖描述的先前技術的情況下。
【0036】
如第6圖所示，所有晶片1連續地設置在端子基板12上，並以導電的方式連接於端子基板12，其中，隨著焊接材料沉積16的重熔，晶片1被放置工具9夾持直到焊接材料凝固成為焊接連接8，使得個別晶片1之間不需要黏合層2用於固定晶片1的相對配置，如第1圖中所示的先前技術的情況下。
【0037】
一旦端子基板12上晶片1的所需數量的放置完成後，具端子基板12的晶片1的氣密封裝構造可藉由應用於端子基板12的模制材料17之手段來製造，如第7圖所示。
1．．．晶片
5．．．端面
8．．．焊接連接
10．．．窗口開口
12．．．端子基板
14．．．內部接觸
L．．．雷射輻射
U．．．負壓

Claims (17)

  1. 【第1項】
    一種晶片配置，其包含一端子基板及設置在該端子基板上之複數個半導體基板，在特定之一晶片中，其中設置在該晶片之接觸表面上之端面係連接於在該端子基板之接觸表面上之端面，其中
    該晶片延伸平行於一側向邊緣且該晶片之接觸表面橫向於該端子基板之接觸表面，其中一通孔係設置在該端子基板之中，該通孔連接設置在一外部接觸側上之一外部接觸與在該端子基板之接觸表面上形成作為一內部接觸之端面，其中相鄰於該側向邊緣配置的該晶片的端面係藉由重熔一焊接材料沉積的方式連接於該端子基板之該內部接觸。
  2. 【第2項】
    如申請專利範圍第1項所述之晶片配置，其中
    該端子基板之該內部接觸及該晶片之端面係相對於彼此以其間形成一空間角落的方式設置。
  3. 【第3項】
    如申請專利範圍第2項所述之晶片配置，其中
    形成在該內部接觸及該晶片之端面之間之該空間角落具有在30°及150°之間之一角落角度。
  4. 【第4項】
    如申請專利範圍第3項所述之晶片配置，其中
    該角落角度係在60°及120°之間。
  5. 【第5項】
    如申請專利範圍第4項所述之晶片配置，其中
    該角落角度係為90°。
  6. 【第6項】
    如前述申請專利範圍中任一項所述之晶片配置，其中
    該晶片之該側向邊緣及該端子基板之接觸表面係藉由一填充間隙來間隔彼此。
  7. 【第7項】
    一種用於製造包含端子基板及配置在端子基板上之複數個半導體基板之晶片配置的方法，在特定的一晶片中，其中設置在該晶片之接觸表面上之端面係連接於該端子基板之接觸表面上之端面，其中
    以相鄰於一側向邊緣設置之該晶片的端面分配給形成一內部接觸之該端子基板之端面之方式，該晶片係設置平行於該側向邊緣且該晶片之接觸表面橫向於該端子基板之接觸表面，該端子基板之端面藉由形成在該端子基板內之一通孔之手段被連接到設置在該端子基板的一外部接觸側上的一外部接觸，且該內部接觸係藉由重熔一焊接材料沉積的方式依序地連接於該晶片之端面。
  8. 【第8項】
    如申請專利範圍第7項所述之方法，其中
    在該晶片之端面及該端子基板之該內部接觸之間之連接被製造之前，該焊接材料沉積設置在該端子基板之該內部接觸上。
  9. 【第9項】
    如申請專利範圍第8項所述之方法，其中
    該焊接材料沉積在該端子基板之該內部接觸上之配置係在該晶片被放置在該端子基板之接觸表面上之前進行。
  10. 【第10項】
    如申請專利範圍第7項至第9項中任一項所述之方法，其中
    藉由一放置工具之手段以該晶片藉由該放置工具拾起的方式，該晶片係設置在該端子基板之接觸表面上，朝向該端子基板對應於所需之一位置設置，且固持於該位置上。
  11. 【第11項】
    如申請專利範圍第10項所述之方法，其中
    該晶片以一填充間隙形成在該晶片之該側向邊緣及該端子基板之接觸表面之間的方式固持於該位置上。
  12. 【第12項】
    如申請專利範圍第7項至第11項中任一項所述之方法，其中
    該晶片之放置係以該端子基板之該內部接觸及該晶片之端面彼此相對以在其間形成一角落角度的方式設置之方式進行。
  13. 【第13項】
    如申請專利範圍第10項至第12項中任一項所述之方法，其中
    該晶片係藉由一負壓之手段固持。
  14. 【第14項】
    如申請專利範圍第7項至第13項中任一項所述之方法，其中
    用於在該端子基板之該內部接觸及該晶片之端面之間製造一焊接連接之該焊接材料沉積之重熔係在該晶片被放置時進行。
  15. 【第15項】
    如申請專利範圍第7項至第14項中任一項所述之方法，其中
    該焊接材料沉積係藉由一雷射能量之手段重熔。
  16. 【第16項】
    如申請專利範圍第15項所述之方法，其中
    該焊接材料沉積係以一雷射輻射通過該放置工具衝擊。
  17. 【第17項】
    如申請專利範圍第7項至第16項中任一項所述之方法，其中
    該晶片在該端子基板之接觸表面上之放置及該晶片之端面與該端子基板之該內部接觸之連接係以一形式依序地進行，該形式為在平行於該端子基板之接觸表面之一放置方向上，一個接一個將該晶片放置且連接於該端子基板。
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TWI539536B (zh) 2016-06-21
EP2951861A2 (de) 2015-12-09
KR101845143B1 (ko) 2018-05-18
US9685423B2 (en) 2017-06-20
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KR20150115755A (ko) 2015-10-14
RU2635852C2 (ru) 2017-11-16
EP2951861B1 (de) 2020-10-28
JP2016507899A (ja) 2016-03-10
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