TW201419544A - 半導體裝置之接觸結構、金氧半導體場效電晶體、及半導體裝置之製造方法 - Google Patents

半導體裝置之接觸結構、金氧半導體場效電晶體、及半導體裝置之製造方法 Download PDF

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TW201419544A
TW201419544A TW102138196A TW102138196A TW201419544A TW 201419544 A TW201419544 A TW 201419544A TW 102138196 A TW102138196 A TW 102138196A TW 102138196 A TW102138196 A TW 102138196A TW 201419544 A TW201419544 A TW 201419544A
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layer
dielectric layer
semiconductor
substrate
opening
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TW102138196A
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TWI495107B (zh
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Sung-Li Wang
Ding-Kang Shih
Chin-Hsiang Lin
Sey-Ping Sun
Clement Hsingjen Wann
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Taiwan Semiconductor Mfg
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Abstract

本發明提供了一種半導體裝置之接觸結構，包括：一基板，包括一主表面以及位於該主表面下方之一溝槽；一應變材料，填滿該溝槽，其中該應變材料之晶格常數不同於該基板之晶格常數；一層間介電層，具有位於該應變材料上之一開口，其中該開口包括了數個介電側壁以及一應變材料底部；一半導體層，位於該開口之該些介電側壁與該應變材料底部上；一介電層，位於該半導體層上；以及一金屬層，填滿該介電層之一開口。

Description

半導體裝置之接觸結構、金氧半導體場效電晶體、及半導體裝置之製造方法
本發明係關於積體電路製作，且特別地關於一種具有接觸結構(contact structure)之半導體裝置。
隨著半導體工業演進至奈米技術製程節點以追求更高之裝置密度、更佳之表現與更低之成本，來自於製造與設計問題的挑戰進而發展出了如鰭型場效電晶體(FinFET)之三維設計(3D design)之半導體裝置。典型之鰭型場效電晶體係藉由如蝕刻去除基板之矽層之一部以形成延伸自基板之一垂直薄型”鰭部”(或鰭結構)。鰭型場效電晶體之通道係形成於此垂直鳍部之內。而閘極係形成(如包覆)於此鳍部之三個側邊之上。具有位於通道之兩側邊上之閘極可自通道之此兩側邊控制此通道。鳍型場效電晶體之未來挑戰則包括了降低短通道效應以及更高之電流量。
然而，於互補型金氧半導體製作(CMOS fabrication)中應用鰭型場效電晶體之構件與製程仍遭遇了眾多挑戰。舉例來說，應變材料(strained materials)的矽化物的形成(silicide formation)於鳍型場效電晶體之源極/汲極區造成了高接觸電阻(high contact resistance)，進而劣化了裝置表現。
依據一實施例，本發明提供了一種半導體裝置之接觸結構，包括：一基板，包括一主表面以及位於該主表面下方之一溝槽；一應變材料，填滿該溝槽，其中該應變材料之晶格常數不同於該基板之晶格常數；一層間介電層，具有位於該應變材料上之一開口，其中該開口包括了數個介電側壁以及一應變材料底部；一半導體層，位於該開口之該些介電側壁與該應變材料底部上；一介電層，位於該半導體層上；以及一金屬層，填滿該介電層之一開口。
依據另一實施例，本發明提供了一種金氧半導體場效電晶體，包括：一基板，包括一主表面；一閘堆疊物，位於該基板之該主表面上；一溝槽，位於鄰近該閘堆疊物之該主表面之下；一淺溝槽隔離物，設置於該溝槽相對於該閘堆疊物之一側上，其中淺溝槽隔離區係位於該基板內；以及一接觸結構，包括：一應變材料，填滿該溝槽，其中該應變材料之晶格常數不同於該基板之晶格常數；一層間介電層，具有位於該應變材料上之一開口，其中該開口包括了數個介電側壁以及一應變材料底部；一半導體層，位於該開口之該些介電側壁與該應變材料底部上，其中該半導體層具有介於0.3-1.5奈米之厚度；一介電層，位於該半導體層上，其中該介電層具有介於1-10奈米之厚度；以及一金屬層，填滿該介電層之一開口。
依據又一實施例，本發明提供了一種半導體裝置 之製造方法，包括：提供包括一主表面以及位於該主表面之下之一溝槽之一基板；磊晶成長一應變材料於該溝槽內，其中該應變材料之晶格常數不同於該基板之晶格常數；形成一層間介電層於該應變材料上；形成一開口於該層間介電層內，以露出該應變材料之一部；形成一半導體氧化物層於該開口之內部並延伸至該層間介電層之上；形成一第一金屬層於該半導體氧化物層；加熱該基板，以形成一半導體層與一介電層於該半導體氧化物層上；以及形成一第二金屬層於該介電層之一開口內。
為讓本發明之上述目的、特徵及優點能更明顯易懂，下文特舉一較佳實施例，並配合所附的圖式，作詳細說明如下。
100‧‧‧製造方法
102、104、106、108、110、112、114、116‧‧‧步驟
20‧‧‧基板
20s‧‧‧主表面
200‧‧‧半導體裝置
202‧‧‧鳍結構
204‧‧‧淺溝槽隔離區
204a‧‧‧淺溝槽隔離區
204b‧‧‧淺溝槽隔離區
206‧‧‧源極與汲極溝槽
206a‧‧‧源極與汲極溝槽
206b‧‧‧源極與汲極溝槽
208‧‧‧應變材料
210‧‧‧閘堆疊物
212‧‧‧閘介電層
214‧‧‧閘電極層
216‧‧‧側壁間隔物
218‧‧‧層間介電層
220‧‧‧開口
220a‧‧‧介電側壁
220b‧‧‧應變材料底部
222‧‧‧半導體氧化物層
224‧‧‧第一金屬層
226‧‧‧半導體層
228‧‧‧介電層
230‧‧‧開口
232‧‧‧第二金屬層
234‧‧‧接觸結構
t1‧‧‧第一厚度
t2‧‧‧第一厚度
t3‧‧‧第一厚度
t4‧‧‧第一厚度
第1圖為一流程圖，顯示了依據本發明之一實施例之一種半導體裝置之接觸結構之製造方法。
第2-12圖為一系列剖面示意圖，分別顯示了依據本發明之一實施例之包括一接觸結構之一種半導體裝置於製造中之不同階段中的情形。
可以理解的是，於下文中提供了用於施行本發明之不同特徵之多個不同實施例，或範例。基於簡化本發明之目的，以下描述了元件與設置情形之特定範例。然而，此些元件與設置情形僅作為範例之用而非用於限制本發明。此外，本發明於不同實施例中可能重複使用標號及/或文字。如此之重複 情形係基於簡化與清楚之目的，而非用於限定不同實施例及/或討論形態內的相對關係。再者，於描述中關於於一第二元件之上或上之第一元件的形成可包括了第一元件與第二元件係為直接接觸之實施情形，且亦包括了於第一元件與第二元件之間包括了額外元件之實施情形，因而使得第一元件與第二元件之間並未直接接觸。再者，本文中將於不同實施例可能重複使用標號及/或文字。此些重複情形係基於簡化與清楚之目的，而非限定介於此些不同實施例及/或討論型態之間的關係。
請參照第1圖，顯示了為依據本發明之一實施例之 半導體裝置之接觸結構之一種製造方法100之流程圖。製造方法100起始於步驟120，提供包括一主表面以及位於主表面下之一溝槽之一基板。製造方法100接著進行步驟104，於溝槽內成長一應變材料，其中應變材料的晶格常數不同於基板的晶格常數。製造方法100接著進行步驟106，形成一層間介電層(ILD)於應變材料上。製造方法100接著進行步驟108，於層間介電層內形成露出應變材料之一部之一開口。製造方法100接著進行步驟110，形成一半導體氧化物層於開口內並延伸於層間介電層上。製造方法100接著進行步驟112，於半導體氧化物層上形成一第一金屬層。製造方法100接著進行步驟114，加熱基板以形成一半導體層與位於半導體層上之一介電層。製造方法100接著進行步驟116，於介電層之一開口內形成一第二金屬層。 本發明之半導體裝置之多個實施例的製作可參照如第1圖所示之製造方法100所完成。
第2-12圖為一系列剖面示意圖，顯示了依據本發明 之多個實施例之包括接觸結構234之半導體裝置200於製造時之多個階段中之情形。於本實施例中，半導體裝置200係為一鰭型場效電晶體(FinFET)。此鰭型場效電晶體可為任一型之鳍基(fin-based)之多重閘電晶體。於部分之其他實施例中，半導體裝置200係為一平面型金氧半導體場效電晶體(planar MOSFET)。其他電晶體結構及類似結構亦屬於本發明之範疇。 此半導體裝置200可設置於一微處理器、記憶體、及/或積體電路之內。
值得注意的是，於部分實施例中，如第1圖所示之 操作並無法形成一完整半導體裝置200。而完整的半導體裝置200可採用互補型金氧半導體技術製程所製造形成。如此，可以理解的是可於如第1圖所示之製造方法之前、之中或之後施行額外製程，而可僅於此處簡單描述部分之其他製程。此外，基於較易了解本發明概念之目的，第2-12圖係為簡化過之圖示。舉例來說，雖然如圖式中繪示了半導體裝置200，可以理解的是積體電路可包括如電阻、電容、電感、熔絲等之數個其他裝置。
請參照第2圖及第1圖內之步驟102，提供包括一主 表面20s之一基板20。於至少一實施例中，基板20包括一結晶矽基板(例如晶圓)。依照設計需求(如P型基板或N型基板)，基板20可包括多個摻雜區。於部分實施例中，此些摻雜區可摻雜有P型摻質或N型摻質。舉例來說，此些摻雜區可摻雜如硼或BF2之P型摻質，或如磷或砷之N型摻質例，及/或其組合。此些摻雜區可用於N型之鳍型場效電晶體或平面型金氧半導體電晶 體之內，或用於P型之鰭型場效電晶體或平面型金氧半導體電晶體之內。
基板20亦可由其他之適當半導體材料所形成，例 如為鑽石或鍺等元素態半導體材料、如砷化鎵、碳化矽、砷化銦、或磷化銦之化合物半導體材料，或如碳化矽鍺、磷化砷銦或磷化鎵銦之合金半導體材料。再者，基板20可包括一磊晶層(epi-layer)而經過應變以改善其表現，及/或可包括絕緣層上覆矽結構(SOI structure)。
於圖示之實施例中，基板20可更包括一鳍結構202。形成於基板20上之鳍結構202包括了一或多個鳍部(fin)。於所示之實施例中，基於簡化之目的，鳍結構202包括了單一鳍部。此鳍部包括任一適當材料，鳍部可包括如矽、鍺、或化合物半導體之材料。鳍結構202可更包括設置於鳍部上之一上蓋層(未顯示)，而此上蓋層可為一矽上蓋層(silicon-capping layer)。
鳍結構202係由任一之適當製程所形成，其包括了多個沉積、微影、及/或蝕刻製程的施行。微影製程之一範例可包括形成一光阻層(阻劑)以覆蓋基板20(例如為位於一矽層上)、曝光光阻以形成一圖案、施行一曝光後烘焙製程、以及顯影此光阻以形成包括此光阻之一遮蔽元件。可接著採用反應性離子蝕刻製程及/或其他適當製程以蝕刻矽層。於一實施例中，可採用圖案化與蝕刻矽基板20之一部以形成鳍結構202之此些矽鳍部。於另一實施例中，鳍結構202之矽鳍部的形成可形成採用圖案化與蝕刻沉積於一絕緣層上之一半導體層(例如 一絕緣層上覆矽基板之一絕緣-矽堆疊結構之一上方矽層)所形成。於其他實施例中，鳍結構係由形成一介電層於一基板上、於介電層內形成數個開口溝槽、以及於基板內之溝槽內磊晶成長以形成鳍部所形成。
於圖示實施例中，於基板20內形成有數個隔離區 以定義與電性隔離鳍結構202之不同鳍部。於一範例中，此些隔離區包括了淺溝槽隔離區204(包括了204a與204b)。此些隔離區可包括氧化矽、氮化矽、氮氧化矽、氟摻雜矽玻璃(FSG)、低介電常數介電材料及/或其組合。且於本實施例中，此些隔離區之淺溝槽隔離區可藉由任一適當製程所形成。於一範例中，淺溝槽隔離區204的形成可包括採用一介電材料填入(例如採用化學氣相沉積)位於鳍部間之溝槽內。於部分實施例中，所填入之溝槽可具有一多層膜結構，例如為包括為氮化矽或氧化矽所填滿之熱氧化物襯層。
請繼續參照第2圖，於淺溝槽隔離區204之間的基 板20之主表面20s(例如鳍結構202之頂面)上形成一閘堆疊物210。雖然於本圖式中閘堆疊物210僅延伸於鳍部的頂面上，熟悉此技術者可理解於裝置之另一平面內(未顯示於圖內)，閘堆疊物210係沿著鳍結構202之側壁而延伸。於部分實施例中，閘堆疊物210包括一閘介電層212與位於閘介電層212上之一閘電極層214。於部分實施例中，一對側壁間隔物係形成於閘堆疊物210之兩個側壁上。於圖示實施例中，閘堆疊物210可採用任一適當製程所形成，包括了下述描述之製程。
於一範例中，閘介電層212與閘電極層214係依序 沉積於基板20上。於部分實施例中，閘介電層212可包括氧化矽、氮化矽、氮氧化矽或高介電常數(high-k)介電材料。高介電常數介電材料包括了金屬氧化物。金屬氧化物的範例包括鋰、鈹、鎂、鈣、鍶、釔、鋯、鉿、鋁、鑭、鈽、鐠、釹、釤、銪、釓、鋱、鏑、鈥、鉺、銩、鐿、鎦及其混合物所組成族群之一氧化物。於本實施例中，閘介電層212為具有介於約10-30奈米之一厚度之一高介電常數介電層。閘介電層212可藉由任一適當製程所製程，例如為原子層沉積、化學氣相沉積、物理氣相沉積、熱氧化法、紫外光-臭氧氧化法或其組合。閘介電層212可更包括一中間層(未顯示)，以減少介於閘介電層212與鳍結構202之間的毀損情形。此中間層可更包括氧化矽。
於部分實施例中，閘電極層214可包括單一膜層或多重膜層。於至少一實施例中，閘電極層214包括了多晶矽。再者，閘電極層214可為具有均勻或非均勻摻雜情形之經摻雜多晶矽。於另一實施例中，閘電極層214包括了由鎢、銅、鈦、銀、鋁、鋁鈦、氮化鈦鋁、碳化鉭、碳氮化鉭、氮矽化鉭、錳、與鋯之所組成之族群之一金屬。於其他實施例中，閘電極層214包括擇自由氮化鈦、氮化鎢、氮化鉭與釕所組成族群之一金屬。於本實施例中，閘電極層214包括了介於30-60奈米之一厚度。閘電極層214可採用任一適當製程所形成，例如為原子層沉積、化學氣相沉積、物理氣相沉積、電鍍或其組合。
接著，藉由如旋轉塗佈一適當製程於閘電極層214上形成一層光阻(未顯示)，並藉由一適當微影圖案方法以圖案化之而形成一圖案化之之光阻構件。於至少一實施例中，圖案 化之光阻構件之寬度係介於5-45奈米之間。可接著藉由一乾蝕刻製程轉移圖案化之光阻構件的圖案至下方膜層(即閘電極層214與閘介電層212)內以形成閘堆疊物210。接著移除光阻。
請繼續參照第2圖，半導體裝置200更包括形成於 閘堆疊物210與基板20上且覆蓋閘堆疊物210的側壁之一介電層。此介電層可包括氧化矽、氮化矽或氮氧化矽。此介電層包括一單一膜層或多重膜層結構。此介電層可由原子層沉積、化學氣相沉積、物理氣相沉積或其他適當技術所形成。此介電層包括介於5-15奈米之厚度。接著，可於介電層上施行非等向性蝕刻，以形成位於閘堆疊物210之兩側邊上之一對側壁間隔物216。
請參照第3圖以及第1圖內之步驟102，接著凹陷部 分之鳍結構202(即閘堆疊物210與側壁間隔物216形成於其上以外的部分)以形成鄰近於閘堆疊物210且低於基板20之主表面20s之數個源極與汲極溝槽206(包括了206a與206b)。於圖示實施例中，此些源極與汲極溝槽206分別位於閘堆疊物210與淺溝槽隔離區204之一之間。如此，此些源極與汲極溝槽206a係鄰近於閘堆疊物210，而淺溝槽格離區204a係設置於源極與汲極溝槽206a之相對於閘堆疊物210之一側上。如此，源極與汲極溝槽206b係鄰近於閘堆疊物210，而淺溝槽隔離區204b係設置於源極與汲極溝槽206b相對於閘堆疊物210之一側。
於圖示之實施例中，係採用閘堆疊物210及間隔物 216之側壁作為硬罩幕，並施行一偏壓蝕刻製程以凹陷未為保護的或露出的基板20之主表面20s，以形成此些源極與汲極溝 槽206。於一實施例中，此蝕刻製程可於介於約1-1000mTorr之一壓力、介於約50-1000瓦特之一功率、介於約20-500伏特之一偏壓、介於約40-60℃之一溫度等參數下採用溴化氫及或氯氣作為蝕刻氣體而施行。此外，於圖示實施例中，可調整於蝕刻製程中所使用之偏壓，以使得蝕刻反應已達到源極與汲極溝槽206之期望輪廓的較佳控制。
如第4圖及第1圖內步驟104所示，於形成位於基板 20之主表面20s下方之源極與汲極溝槽206後，如第4圖內所示結構可藉由磊晶成長一應變材料208於此些源極汲極溝槽206內所形成，其中應變材料208之晶格常數不同於基板20之晶格常數。因此，半導體裝置200之通道區係經過應變或施加有應力，藉以增強裝置之載子遷移率(carrier mobility)。
於部分實施例中，應變材料208包括了矽、鍺、矽 鍺、碳化矽、磷化矽、或III-V族半導體材料。於圖示實施例中，可施行一預先潔淨製程，藉由氫氟酸或其他適當溶液以潔淨源極與汲極溝槽206。接著，如矽鍺之應變材料208藉由一低壓化學氣相沉積製程而選擇性地成長以填滿源極與汲極溝槽206。 於一實施例中，應變材料208之一上表面係低於主表面20s(未顯示)。於另一實施例中，填入於源極與汲極溝槽206的應變材料208向上延伸而高於主表面20s。於圖示實施例中，此低壓化學氣相沉積法係於介於400-800℃之一溫度與約1-15Torr之一壓力下施行，採用了SiH2Cl2、HCl、GeH4、B2H6與H2作為反應氣體。
製程至此，已形成了具有位於源極與汲極溝槽206 內應變材料208之基板20。於部分應用中，位於應變材料208上之矽化物區可藉由坦覆地沉積如鎳、鈦、鈷、及其組合之一薄金屬材料層而形成。接著加熱基板20，以使得矽與連接之金屬進行反應。於此反應之後，於含矽材料與金屬之間形成了一層金屬矽化物。接著採用僅去除金屬但不會去除金屬矽化物之蝕刻劑以選擇性地移除未反應之金屬。然而，介於金屬矽化物與應變材料208之間的費米能階形成了固定之一蕭基壁壘高度(Schottky barrier height、SBH)。此固定之蕭基壁壘高度造成了半導體裝置之源極汲極區的高接觸電阻，並因此劣化了裝置表現。
如此，參照第5-12圖之下述製程可形成包括一導電 介電層之一接觸結構，以取代金屬矽化物區。此導電介電層可作為替代高電阻值金屬矽化物之一低電阻值中間層。如此，接觸結構可使得半導體裝置之源極汲極區具有低接觸電阻值，進而增進了裝置表現。
如第5、6圖以及第1圖內步驟106所示情形，為了 製造半導體裝置200之一接觸結構(例如如第12圖內所示之一接觸結構234)，如第5圖所示之結構的製作可藉由形成一層間介電層218於應變材料208、閘堆疊物210、此對側壁間隔物216以及隔離區204之上而形成。
層間介電層208包括一介電材料。此介電材料可包 括氧化矽、氮化矽、氮氧化矽、磷矽玻璃、硼磷矽玻璃、旋轉塗佈玻璃、氟摻雜矽玻璃(FSG)、碳摻雜氧化矽(SiCOH)及/或其組合。於部分實施例中，層間介電層218可藉由化學氣相沉 積、高密度電漿加強型化學氣相沉積、次大氣壓化學氣相沉積、旋轉塗佈、濺鍍、或其他適當方法而形成於應變材料208上。於本實施例中，層間介電層218具有介於約4000-8000埃之一厚度。可以理解的是，層間介電層218可包括一或多個介電材料及/或一或多個介電層。
接著，採用一化學機械研磨(CMP)製程以平坦化層 間介電層218直至露出或抵達了閘電極層214的頂面(顯示於第6圖中)。此化學機械研磨製程具有一高度選擇比，以形成閘電極層214與層間介電層218的一大體平坦表面。
接著針對第6圖之半導體裝置200施行一互補型金 氧半導體(CMOS)製程，其包括了形成穿過層間介電層218之接觸開口，以提供至半導體裝置200之源極/汲極區之電性接觸情形。請參照第7圖，如第7圖內所示結構的形成可藉由於層間介電層218內形成一開口220，以露出應變材料208之一部(如第1圖內之步驟108)。於一範例中，開口220的形成包括了藉由如旋轉塗佈之一適當製程形成一層光阻(未顯示)於層間介電層218上、藉由一適當微影方法圖案化此光阻層以形成一圖案化光阻構件、蝕刻層間介電層218(例如採用一乾蝕刻、一濕蝕刻、及/或電漿蝕刻製程)以移除層間介電層218之數個部分並露出應變材料208之一部。因此，開口220係位於應變材料208上，其中開口220包括了數個介電側壁220a以及一應變材料底部220b。接著移除圖案化光阻層。
請參照第8圖以及第1圖內步驟110，於形成開口 220於層間介電層218內之後，第8圖內結構可藉由形成一半導 體氧化物層222位於開口220之內並使之延伸於層間介電層218與閘堆疊物210之上所形成。於部分實施例中，半導體氧化物層222可包括氧化矽或氧化鍺，且可藉由如化學氣相沉積、原子層沉積或濺鍍之一方法所形成。於部分實施例中，半導體氧化物層222具有介於約0.6-3奈米之第一厚度t1。
請參照第9圖以及第1圖內之步驟112，於形成半導 體氧化物層222於開口220之內後，如第9圖所示結構可藉由形成一第一金屬層224於半導體氧化物層222上而形成。於部分實施例中，第一金屬層224可包括鈦、鋁、鋯、鉿、鉭、銦、鈹、鎂、鈣、釔、鋇、鍶、鈧、或鎵，且可採用如化學氣相沉積、原子層沉積或濺鍍之一方法所形成。於部分實施例中。第一金屬層224具有介於約0.5-4奈米之第二厚度t2。
請參照第10圖以及第1圖內之步驟114，於形成第 一金屬層224於半導體氧化物層222上之後，如第10圖結構接著藉由加熱基板20以形成一半導體層226以及一介電層228於半導體層226上而形成。於部分實施例中，半導體層226包括矽或鍺。於部分實施例中，半導體層226具有介於約0.3-1.5奈米之第三厚度t3。於部分實施例中，部分填入於開口220內之介電層228具有一開口230。於部分實施例中，介電層228具有介於約1-10奈米之第四厚度t4，進而使得介電層228為導電的。本發明之接示情形並非限於一特定操作理論，可以理解的是於本發明之厚度範圍下，由於穿隧電流(tunneling current)因素，因此介電層228為一導電介電層。如此，於下文中介電層228亦可稱為一導電介電層228。於至少一實施例中，導電介電層228包括 氧化鈦或二氧化鈦。於另一實施例中，導電介電層228包括氧化鋁。於又一實施例中，導電介電層228係擇自由鋯、鉿、鉭、銦、鎳、鈹、鎂、鈣、釔、鋇、鍶、鈧、鎵及其混合物所組成族群之一氧化物。於圖示之實施例中，導電介電層228可包括降低固定蕭基阻障高度(SBH)且作為取代高電阻值之金屬矽化物之一低電阻值中間層，進而改善裝置表現。
於熱動力學觀點中，半導體層226較第一金屬層 224於含氧環境中為穩定的。如此，第一金屬層224可將與之接觸的半導體氧化物層222轉變成為半導體層226，而第一金屬層224則被氧化而形成了位於半導體層226上之導電介電層228。 於圖示實施例中，半導體層226係位於開口220的側壁220a及底部220b上。於部分實施例中，加熱基板20的步驟的施行係藉由暴露基板20於介於200-800℃之溫度之一鈍氣中。於部分實施例中，此鈍氣包括了氮氣、氦氣或氬氣。
請參照第11、12圖以及第1圖內之步驟116，於形 成導電介電層228之後，如第11圖所示結構可藉由形成一第二金屬層232於介電層228之開口230內所形成。於圖示之實施例中，第二金屬層232係沉積於導電介電層228上以填滿導電介電層228之開口230。於部分實施例中，第二金屬層232包括鉭、鈦、鉿、鋯、鎳、鎢、鈷、銅或鋁。於部分實施例中，第二金屬層232可藉由化學氣相沉積、物理氣相沉積、電鍍、原子層沉積或其他適當技術所形成。於部分實施例中，第二金屬層232可包括層疊膜層。此層疊膜層可更包括一阻障金屬層(barrier metal layer)、一襯金屬層(liner metal layer)或一濕金屬層(wet metal layer)。再者，第二金屬層232之厚度則可依照開口230之深度而定。因此第二金屬層232可沉積直至大體填滿或過度填滿開口230為止。
接著，施行另一化學機械研磨以平坦化滿出於開 口230之第二金屬層232(第12圖)。因此化學機械研磨移除了第二金屬層232之超過開口230之一部，抵達層間介電層218時此化學機械研磨便可停止，因此而形成了一大體平坦表面。
於部分實施例中，關於如第12圖所示範例中，用 於半導體裝置200之接觸結構234包括了具有主表面20s與位於主表面20s下之溝槽206之基板20、填滿溝槽206之應變材料208，其中應變材料208之晶格常數不同於基板20之晶格常數、具有位於應變材料208上開口220之層間介電層218，其中開口220包括了介電側壁220a及應變材料底部220b、位於開口220之側壁220a與底部220b上之半導體層226、位於半導體層226上之介電層228、以及填滿介電層228之開口230之金屬層232。
於圖示之實施例中，閘堆疊物210係採用一閘極優 先(gate first)製程所形成。於另一實施例中，閘堆疊物210可採用閘極最後(gate last)製程所形成，其藉由先形成一假閘堆疊物。於部分實施例中，閘極最後製程形成了環繞假閘堆疊物之一層間介電層、移除假閘電極層以於層間介電層內形成一溝槽，接著採用一導電閘電極層填入溝槽。於部分實施例中，閘極最後製程包括環繞形成假閘堆疊物之一層間介電層、移除假閘電極層以及假閘介電層，以於層間介電層內形成一溝槽，接著採用一閘介電層與一導電閘電極層填滿開口。
於如第1圖所示之步驟後以及參照如第2-12圖所示範例的施行，可更施行包括了內連製程之後續程序以完成半導體裝置200的製作。可以觀察到的是接觸結構234包括一導電介電層228，其可提供用於內部連結之一低電阻值率路徑，因此提升了裝置表現。
雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任何熟習此項技藝者，在不脫離本發明之精神和範圍內，當可作更動與潤飾，因此本發明之保護範圍當視 後附之申請專利範圍所界定者為準。
100‧‧‧製造方法
102、104、106、108、110、112、114、116‧‧‧步驟

Claims (10)

  1. 一種半導體裝置之接觸結構，包括：一基板，包括一主表面以及位於該主表面下方之一溝槽；一應變材料，填滿該溝槽，其中該應變材料之晶格常數不同於該基板之晶格常數；一層間介電層，具有位於該應變材料上之一開口，其中該開口包括了數個介電側壁以及一應變材料底部；一半導體層，位於該開口之該些介電側壁與該應變材料底部上；一介電層，位於該半導體層上；以及一金屬層，填滿該介電層之一開口。
  2. 如申請專利範圍第1項所述之半導體裝置之接觸結構，其中該應變材料包括了矽、鍺、矽鍺、碳化矽、磷化矽或III-V族半導體材料。
  3. 如申請專利範圍第1項所述之半導體裝置之接觸結構，其中該半導體層包括矽或鍺。
  4. 如申請專利範圍第1項所述之半導體裝置之接觸結構，其中該介電層包括氧化鈦、二氧化鈦、氧化鋁或為擇自由鋯、鉿、鉭、銦、鎳、鈹、鎂、鈣、釔、鋇、鍶、鈧、鎵及其混合物所組成族群之一氧化物。
  5. 一種金氧半導體場效電晶體，包括：一基板，包括一主表面；一閘堆疊物，位於該基板之該主表面上；一溝槽，位於鄰近該閘堆疊物之該主表面之下； 一淺溝槽隔離物，設置於該溝槽相對於該閘堆疊物之一側上，其中淺溝槽隔離區係位於該基板內；以及一接觸結構，包括：一應變材料，填滿該溝槽，其中該應變材料之晶格常數不同於該基板之晶格常數；一層間介電層，具有位於該應變材料上之一開口，其中該開口包括了數個介電側壁以及一應變材料底部；一半導體層，位於該開口之該些介電側壁與該應變材料底部上，其中該半導體層具有介於0.3-1.5奈米之厚度；一介電層，位於該半導體層上，其中該介電層具有介於1-10奈米之厚度；以及一金屬層，填滿該介電層之一開口。
  6. 如申請專利範圍第5項所述之金氧半導體場效電晶體，其中該應變材料包括了矽、鍺、矽鍺、碳化矽、磷化矽或III-V族半導體材料。
  7. 如申請專利範圍第5項所述之金氧半導體場效電晶體，其中該半導體層包括矽或鍺。
  8. 如申請專利範圍第5項所述之金氧半導體場效電晶體，其中該介電層包括氧化鈦、二氧化鈦、氧化鋁或為擇自由鋯、鉿、鉭、銦、鎳、鈹、鎂、鈣、釔、鋇、鍶、鈧、鎵及其混合物所組成族群之一氧化物。
  9. 如申請專利範圍第5項所述之金氧半導體場效電晶體，其中該金屬層包括了鉭、鈦、鉿、鋯、鎳、鎢、鈷、銅或鋁。
  10. 一種半導體裝置之製造方法，包括： 提供包括一主表面以及位於該主表面之下之一溝槽之一基板；磊晶成長一應變材料於該溝槽內，其中該應變材料之晶格常數不同於該基板之晶格常數；形成一層間介電層於該應變材料上；形成一開口於該層間介電層內，以露出該應變材料之一部；形成一半導體氧化物層於該開口之內部並延伸至該層間介電層之上；形成一第一金屬層於該半導體氧化物層；加熱該基板，以形成一半導體層與一介電層於該半導體氧化物層上；以及形成一第二金屬層於該介電層之一開口內。
TW102138196A 2012-11-08 2013-10-23 半導體裝置之接觸結構、金氧半導體場效電晶體、及半導體裝置之製造方法 TWI495107B (zh)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI683369B (zh) * 2018-04-30 2020-01-21 台灣積體電路製造股份有限公司 半導體元件及其製造方法
TWI761466B (zh) * 2017-11-29 2022-04-21 國立大學法人東北大學 含鈷合金之半導體裝置及其製造方法
TWI844516B (zh) * 2017-08-07 2024-06-11 日商索尼半導體解決方案公司 電性連接構造、半導體裝置及電子機器

Families Citing this family (592)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9287138B2 (en) 2012-09-27 2016-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET low resistivity contact formation method
US8823065B2 (en) 2012-11-08 2014-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure of semiconductor device
US9105490B2 (en) 2012-09-27 2015-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure of semiconductor device
US9385098B2 (en) * 2012-11-21 2016-07-05 Nvidia Corporation Variable-size solder bump structures for integrated circuit packaging
KR20140089639A (ko) * 2013-01-03 2014-07-16 삼성전자주식회사 가변 저항 메모리 장치 및 그 형성 방법
US9559181B2 (en) * 2013-11-26 2017-01-31 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for FinFET device with buried sige oxide
US9508716B2 (en) * 2013-03-14 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of manufacturing a semiconductor device
US20140264634A1 (en) * 2013-03-14 2014-09-18 Intermolecular, Inc. Finfet for rf and analog integrated circuits
US9240480B2 (en) * 2013-03-14 2016-01-19 Taiwan Semiconductor Manufacturing Company, Ltd. Metal-oxide-semiconductor field-effect transistor with metal-insulator semiconductor contact structure to reduce Schottky barrier
US9219062B2 (en) * 2013-05-24 2015-12-22 GlobalFoundries, Inc. Integrated circuits with improved source/drain contacts and methods for fabricating such integrated circuits
US9716174B2 (en) 2013-07-18 2017-07-25 Globalfoundries Inc. Electrical isolation of FinFET active region by selective oxidation of sacrificial layer
US9349730B2 (en) 2013-07-18 2016-05-24 Globalfoundries Inc. Fin transformation process and isolation structures facilitating different Fin isolation schemes
US9224865B2 (en) * 2013-07-18 2015-12-29 Globalfoundries Inc. FinFET with insulator under channel
US9773696B2 (en) 2014-01-24 2017-09-26 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
US9548303B2 (en) 2014-03-13 2017-01-17 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET devices with unique fin shape and the fabrication thereof
US9443769B2 (en) 2014-04-21 2016-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Wrap-around contact
US10177133B2 (en) 2014-05-16 2019-01-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device including source/drain contact having height below gate stack
US9608116B2 (en) 2014-06-27 2017-03-28 Taiwan Semiconductor Manufacturing Company, Ltd. FINFETs with wrap-around silicide and method forming the same
US9966471B2 (en) 2014-06-27 2018-05-08 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked Gate-All-Around FinFET and method forming the same
US9614088B2 (en) 2014-08-20 2017-04-04 Taiwan Semiconductor Manufacturing Company Ltd. Metal gate structure and manufacturing method thereof
US9437484B2 (en) 2014-10-17 2016-09-06 Taiwan Semiconductor Manufacturing Company, Ltd. Etch stop layer in integrated circuits
US9466494B2 (en) 2014-11-18 2016-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Selective growth for high-aspect ration metal fill
US9508858B2 (en) 2014-11-18 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Contacts for highly scaled transistors
US9613850B2 (en) 2014-12-19 2017-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lithographic technique for feature cut by line-end shrink
US9412817B2 (en) 2014-12-19 2016-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. Silicide regions in vertical gate all around (VGAA) devices and methods of forming same
US9876114B2 (en) 2014-12-30 2018-01-23 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for 3D FinFET metal gate
US9673112B2 (en) 2015-02-13 2017-06-06 Taiwan Semiconductor Manufacturing Company, Ltd. Method of semiconductor fabrication with height control through active region profile
US9859115B2 (en) 2015-02-13 2018-01-02 National Taiwan University Semiconductor devices comprising 2D-materials and methods of manufacture thereof
US9502502B2 (en) 2015-03-16 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacture thereof
US9698048B2 (en) 2015-03-27 2017-07-04 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating semiconductor device
US9543304B2 (en) * 2015-04-02 2017-01-10 Stmicroelectronics, Inc. Vertical junction FinFET device and method for manufacture
FI127415B (en) * 2015-04-16 2018-05-31 Turun Yliopisto Preparation of foreign oxide in a semiconductor
US9768261B2 (en) 2015-04-17 2017-09-19 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of forming the same
US9761683B2 (en) 2015-05-15 2017-09-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US9741829B2 (en) * 2015-05-15 2017-08-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US9576796B2 (en) 2015-05-15 2017-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacture thereof
US10062779B2 (en) 2015-05-22 2018-08-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US9685368B2 (en) 2015-06-26 2017-06-20 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure having an etch stop layer over conductive lines
US10403744B2 (en) 2015-06-29 2019-09-03 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices comprising 2D-materials and methods of manufacture thereof
US11424399B2 (en) 2015-07-07 2022-08-23 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated thermoelectric devices in Fin FET technology
US9589851B2 (en) * 2015-07-16 2017-03-07 International Business Machines Corporation Dipole-based contact structure to reduce metal-semiconductor contact resistance in MOSFETs
US9418886B1 (en) 2015-07-24 2016-08-16 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming conductive features
US9536980B1 (en) 2015-07-28 2017-01-03 Taiwan Semiconductor Manufacturing Company, Ltd. Gate spacers and methods of forming same
US9721887B2 (en) 2015-08-19 2017-08-01 Taiwan Semiconductor Manufacturing Company, Ltd Method of forming metal interconnection
US9564363B1 (en) 2015-08-19 2017-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming butted contact
US9831090B2 (en) 2015-08-19 2017-11-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method and structure for semiconductor device having gate spacer protection layer
US9698100B2 (en) 2015-08-19 2017-07-04 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for interconnection
US9728402B2 (en) 2015-08-21 2017-08-08 Taiwan Semiconductor Manufacturing Company, Ltd. Flowable films and methods of forming flowable films
US9786602B2 (en) 2015-08-21 2017-10-10 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnection structure and methods of fabrication the same
US9490136B1 (en) 2015-08-31 2016-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming trench cut
CN106548940A (zh) 2015-09-16 2017-03-29 联华电子股份有限公司 半导体元件及其制作方法
US9613856B1 (en) 2015-09-18 2017-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming metal interconnection
US9735111B2 (en) * 2015-09-23 2017-08-15 International Business Machines Corporation Dual metal-insulator-semiconductor contact structure and formulation method
US9972529B2 (en) 2015-09-28 2018-05-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming metal interconnection
US20170092753A1 (en) * 2015-09-29 2017-03-30 Infineon Technologies Austria Ag Water and Ion Barrier for III-V Semiconductor Devices
TWI682547B (zh) 2015-10-06 2020-01-11 聯華電子股份有限公司 半導體結構以及其製作方法
US10163797B2 (en) 2015-10-09 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Forming interlayer dielectric material by spin-on metal oxide deposition
US9735052B2 (en) 2015-10-12 2017-08-15 Taiwan Semiconductor Manufacturing Company, Ltd. Metal lines for interconnect structure and method of manufacturing same
US9711533B2 (en) 2015-10-16 2017-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET devices having different source/drain proximities for input/output devices and non-input/output devices and the method of fabrication thereof
US9659864B2 (en) 2015-10-20 2017-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for forming self-aligned via with selectively deposited etching stop layer
US9647116B1 (en) 2015-10-28 2017-05-09 Taiwan Semiconductor Manufacturing Co., Ltd. Method for fabricating self-aligned contact in a semiconductor device
US9627531B1 (en) 2015-10-30 2017-04-18 Taiwan Semiconductor Manufacturing Company, Ltd. Field-effect transistor with dual vertical gates
US9818690B2 (en) 2015-10-30 2017-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned interconnection structure and method
US9484255B1 (en) 2015-11-03 2016-11-01 International Business Machines Corporation Hybrid source and drain contact formation using metal liner and metal insulator semiconductor contacts
US9520482B1 (en) 2015-11-13 2016-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method of cutting metal gate
US10164051B2 (en) 2015-11-16 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method of cutting metal gate
US9899387B2 (en) 2015-11-16 2018-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-gate device and method of fabrication thereof
US9633999B1 (en) 2015-11-16 2017-04-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method and structure for semiconductor mid-end-of-line (MEOL) process
US10340348B2 (en) 2015-11-30 2019-07-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing finFETs with self-align contacts
US9773879B2 (en) 2015-11-30 2017-09-26 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and a method for fabricating the same
US9954081B2 (en) 2015-12-15 2018-04-24 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor, semiconductor device and fabricating method thereof
US9873943B2 (en) 2015-12-15 2018-01-23 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for spatial atomic layer deposition
US10163719B2 (en) 2015-12-15 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming self-alignment contact
US9728501B2 (en) 2015-12-21 2017-08-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming trenches
DE102016116026B4 (de) 2015-12-29 2024-02-01 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtung und Herstellungsverfahren
US9887128B2 (en) 2015-12-29 2018-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method and structure for interconnection
US10163704B2 (en) 2015-12-29 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and a method for fabricating the same
US9899269B2 (en) 2015-12-30 2018-02-20 Taiwan Semiconductor Manufacturing Company, Ltd Multi-gate device and method of fabrication thereof
US11088030B2 (en) 2015-12-30 2021-08-10 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and a method for fabricating the same
US9614086B1 (en) 2015-12-30 2017-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Conformal source and drain contacts for multi-gate field effect transistors
US10062630B2 (en) 2015-12-31 2018-08-28 Infineon Technologies Austria Ag Water and ion barrier for the periphery of III-V semiconductor dies
US10115796B2 (en) 2016-01-07 2018-10-30 Taiwan Semiconductor Manufacturing Company, Ltd. Method of pulling-back sidewall metal layer
US10811262B2 (en) 2016-01-14 2020-10-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having a uniform and thin silicide layer on an epitaxial source/ drain structure and manufacturing method thereof
US9881872B2 (en) 2016-01-15 2018-01-30 Taiwan Semiconductor Manufacturing Co., Ltd. Method for fabricating a local interconnect in a semiconductor device
US10727094B2 (en) 2016-01-29 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd Thermal reflector device for semiconductor fabrication tool
US9722081B1 (en) 2016-01-29 2017-08-01 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET device and method of forming the same
US10163912B2 (en) 2016-01-29 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method for semiconductor device fabrication with improved source drain proximity
US10283605B2 (en) 2016-01-29 2019-05-07 Taiwan Semiconductor Manufacturing Co., Ltd Self-aligned metal gate etch back process and device
US9812451B2 (en) 2016-02-03 2017-11-07 Taiwan Semiconductor Manufacturing Company, Ltd Field effect transistor contact with reduced contact resistance
US9768170B2 (en) 2016-02-05 2017-09-19 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor and method for fabricating the same
US9847330B2 (en) 2016-02-05 2017-12-19 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor and method for fabricating the same
US10535558B2 (en) 2016-02-09 2020-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming trenches
US9543161B1 (en) 2016-02-10 2017-01-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method of planarizating film
US9947756B2 (en) 2016-02-18 2018-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US9530887B1 (en) * 2016-02-25 2016-12-27 Taiwan Semiconductor Manufacturing Co., Ltd. Fin-type field effect transistor device and manufacturing method thereof
US9754822B1 (en) 2016-03-02 2017-09-05 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure and method
US9755019B1 (en) 2016-03-03 2017-09-05 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US9570556B1 (en) 2016-03-03 2017-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10056407B2 (en) 2016-03-04 2018-08-21 Taiwan Semiconductor Manufacturing Co., Ltd Semiconductor device and a method for fabricating the same
US9711402B1 (en) 2016-03-08 2017-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming contact metal
US10109627B2 (en) 2016-03-08 2018-10-23 Taiwan Semiconductor Manufacturing Co., Ltd. Enlarging spacer thickness by forming a dielectric layer over a recessed interlayer dielectric
US9911611B2 (en) 2016-03-17 2018-03-06 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming openings in a material layer
DE102016114724B4 (de) 2016-03-25 2021-08-12 Taiwan Semiconductor Manufacturing Company, Ltd. Verfahren zum Ausbilden von Gräben mit unterschiedlichen Tiefen und Vorrichtung
US9779984B1 (en) 2016-03-25 2017-10-03 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming trenches with different depths
US9548366B1 (en) 2016-04-04 2017-01-17 Taiwan Semiconductor Manufacturing Company, Ltd. Self aligned contact scheme
US9831123B2 (en) 2016-04-05 2017-11-28 Globalfoundries Inc. Methods of forming MIS contact structures on transistor devices
US9613855B1 (en) 2016-04-05 2017-04-04 Globalfoundries Inc. Methods of forming MIS contact structures on transistor devices in CMOS applications
US9735273B1 (en) * 2016-04-11 2017-08-15 International Business Machines Corporation Method of forming a III-V compound semiconductor channel post replacement gate
US9847477B2 (en) 2016-04-12 2017-12-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming a bottom electrode of a magnetoresistive random access memory cell
US9805951B1 (en) 2016-04-15 2017-10-31 Taiwan Semiconductor Manufacturing Co., Ltd. Method of integration process for metal CMP
US10354930B2 (en) 2016-04-21 2019-07-16 International Business Machines Corporation S/D contact resistance measurement on FinFETs
US9893062B2 (en) 2016-04-28 2018-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and a method for fabricating the same
US10475847B2 (en) 2016-04-28 2019-11-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having stress-neutralized film stack and method of fabricating same
US9899266B2 (en) 2016-05-02 2018-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET structures and methods of forming the same
CN107369644B (zh) * 2016-05-12 2021-11-02 联华电子股份有限公司 半导体元件及其制作方法
US11127629B2 (en) 2016-05-17 2021-09-21 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and fabricating method thereof
US10276662B2 (en) 2016-05-31 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming contact trench
US9917085B2 (en) 2016-05-31 2018-03-13 Taiwan Semiconductor Manufacturing Company, Ltd. Metal gate isolation structure and method forming same
US9941386B2 (en) 2016-06-01 2018-04-10 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with fin structure and method for forming the same
US10109467B2 (en) 2016-06-01 2018-10-23 Taiwan Semiconductor Manufacturing Co., Ltd. Advanced exhaust system
US9627258B1 (en) 2016-06-15 2017-04-18 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming a contact
US10164032B2 (en) 2016-06-17 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned contact and manufacturing method thereof
US10515822B2 (en) 2016-06-20 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method for preventing bottom layer wrinkling in a semiconductor device
US10008414B2 (en) 2016-06-28 2018-06-26 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for widening Fin widths for small pitch FinFET devices
US10685873B2 (en) 2016-06-29 2020-06-16 Taiwan Semiconductor Manufacturing Co., Ltd. Etch stop layer for semiconductor devices
US9825157B1 (en) * 2016-06-29 2017-11-21 Globalfoundries Inc. Heterojunction bipolar transistor with stress component
TWI688042B (zh) * 2016-07-05 2020-03-11 聯華電子股份有限公司 半導體元件的製作方法
US9768064B1 (en) 2016-07-14 2017-09-19 Taiwan Semiconductor Manufacturing Co., Ltd. Formation method of semiconductor device structure
US9640540B1 (en) 2016-07-19 2017-05-02 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and method for an SRAM circuit
US9721805B1 (en) 2016-07-29 2017-08-01 Taiwan Semiconductor Manufacturing Co., Ltd. Formation method of semiconductor device structure
US10121873B2 (en) 2016-07-29 2018-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Metal gate and contact plug design and method forming same
US10199500B2 (en) 2016-08-02 2019-02-05 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-layer film device and method
US10164111B2 (en) 2016-08-03 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and methods of manufacture
US10510850B2 (en) 2016-08-03 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10043886B2 (en) 2016-08-03 2018-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Metal gate formation through etch back process
US9991205B2 (en) 2016-08-03 2018-06-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10522536B2 (en) 2016-08-03 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with gate stacks
US9929271B2 (en) 2016-08-03 2018-03-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US9997524B2 (en) 2016-08-24 2018-06-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor memory device and manufacturing method thereof
US10269926B2 (en) 2016-08-24 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Purging deposition tools to reduce oxygen and moisture in wafers
US9865697B1 (en) 2016-08-25 2018-01-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US9812358B1 (en) 2016-09-14 2017-11-07 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET structures and methods of forming the same
US9865589B1 (en) 2016-10-31 2018-01-09 Taiwan Semiconductor Manufacturing Co., Ltd. System and method of fabricating ESD FinFET with improved metal landing in the drain
US10326003B2 (en) 2016-11-28 2019-06-18 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET device and methods of forming
US10049930B2 (en) 2016-11-28 2018-08-14 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device and operation method thereof
US10043665B2 (en) 2016-11-28 2018-08-07 Taiwan Semiconductor Manufacturing Co., Ltd. Formation method of semiconductor device structure with semiconductor nanowire
US10700181B2 (en) 2016-11-28 2020-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (finFET) device structure and method for forming the same
US9837539B1 (en) 2016-11-29 2017-12-05 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET device and method of forming
US10553720B2 (en) 2016-11-29 2020-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Method of removing an etch mask
US10510598B2 (en) 2016-11-29 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned spacers and method forming same
US10510851B2 (en) 2016-11-29 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Low resistance contact method and structure
US9985134B1 (en) 2016-11-29 2018-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs and methods of forming FinFETs
US10008497B2 (en) 2016-11-29 2018-06-26 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US10886268B2 (en) 2016-11-29 2021-01-05 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device with separated merged source/drain structure
US10290546B2 (en) 2016-11-29 2019-05-14 Taiwan Semiconductor Manufacturing Co., Ltd. Threshold voltage adjustment for a gate-all-around semiconductor structure
US9881834B1 (en) 2016-11-29 2018-01-30 Taiwan Semiconductor Manufacturing Company, Ltd. Contact openings and methods forming same
DE102017118364B4 (de) 2016-11-29 2021-10-14 Taiwan Semiconductor Manufacturing Co. Ltd. Verfahren mit Herstellung von Source/Drain- und Gate-Kontakten und Struktur mit solchen
US10008416B2 (en) 2016-11-30 2018-06-26 Taiwan Semiconductor Manufacturing Co., Ltd. Forming a protective layer to prevent formation of leakage paths
US10269906B2 (en) 2016-11-30 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having two spacers
US10707316B2 (en) 2016-12-09 2020-07-07 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device structure with gate structure
US10453741B2 (en) 2016-12-13 2019-10-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device contact
DE102017113681A1 (de) 2016-12-14 2018-06-14 Taiwan Semiconductor Manufacturing Co. Ltd. Halbleiter-bauelement mit luft-abstandshalter
US9865595B1 (en) 2016-12-14 2018-01-09 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET device with epitaxial structures that wrap around the fins and the method of fabricating the same
US10037912B2 (en) 2016-12-14 2018-07-31 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacturing the same
US10522642B2 (en) 2016-12-14 2019-12-31 Taiwan Semiconductor Manufacturing Co. Ltd. Semiconductor device with air-spacer
US10157781B2 (en) 2016-12-14 2018-12-18 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor structure using polishing process
US11476349B2 (en) 2016-12-15 2022-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET structures and methods of forming the same
US10497811B2 (en) 2016-12-15 2019-12-03 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET structures and methods of forming the same
US10879370B2 (en) 2016-12-15 2020-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Etching back and selective deposition of metal gate
DE102017117794A1 (de) 2016-12-15 2018-06-21 Taiwan Semiconductor Manufacturing Co., Ltd. Zurückätzen und selektive abscheidung eines metall-gates
US10269646B2 (en) 2016-12-15 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10651171B2 (en) 2016-12-15 2020-05-12 Taiwan Semiconductor Manufacturing Co. Ltd. Integrated circuit with a gate structure and method making the same
DE102017127208A1 (de) 2016-12-15 2018-06-21 Taiwan Semiconductor Manufacturing Co., Ltd. Finfet-strukturen und verfahren zu deren herstellung
US9972571B1 (en) 2016-12-15 2018-05-15 Taiwan Semiconductor Manufacturing Co., Ltd. Logic cell structure and method
US10079289B2 (en) 2016-12-22 2018-09-18 Taiwan Semiconductor Manufacturing Co., Ltd. Metal gate structure and methods thereof
US10164106B2 (en) 2016-12-29 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and a method for fabricating the same
US10121675B2 (en) 2016-12-29 2018-11-06 Taiwan Semiconductor Manufacturing Co., Ltd Semiconductor device and a method for fabricating the same
US10325911B2 (en) 2016-12-30 2019-06-18 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10516030B2 (en) 2017-01-09 2019-12-24 Taiwan Semiconductor Manufacturing Company, Ltd. Contact plugs and methods forming same
US10242918B2 (en) * 2017-02-08 2019-03-26 International Business Machines Corporation Shallow trench isolation structures and contact patterning
US9985023B1 (en) 2017-02-21 2018-05-29 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device structure
US9859364B1 (en) 2017-03-03 2018-01-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10304945B2 (en) 2017-03-24 2019-05-28 Taiwan Semiconductor Manufacturing Co., Ltd. High-speed semiconductor device and method for forming the same
US10950605B2 (en) 2017-03-24 2021-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device
US10090325B1 (en) 2017-03-31 2018-10-02 Taiwan Semiconductor Manufacturing Co., Ltd. Circuit cells having separated gate electrodes
US10355095B2 (en) 2017-03-31 2019-07-16 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET structure with composite gate helmet
US10056473B1 (en) 2017-04-07 2018-08-21 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10153198B2 (en) 2017-04-07 2018-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. Low-resistance contact plugs and method forming same
US10312332B2 (en) 2017-04-18 2019-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming the same
US10269621B2 (en) 2017-04-18 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Contact plugs and methods forming same
US10186456B2 (en) 2017-04-20 2019-01-22 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for forming contact plugs with reduced corrosion
US10062784B1 (en) 2017-04-20 2018-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned gate hard mask and method forming same
US10872980B2 (en) 2017-04-25 2020-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10522643B2 (en) 2017-04-26 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Device and method for tuning threshold voltage by implementing different work function metals in different segments of a gate
US10522417B2 (en) 2017-04-27 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET device with different liners for PFET and NFET and method of fabricating thereof
US10332786B2 (en) 2017-04-27 2019-06-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing a semiconductor device
US10157997B2 (en) 2017-04-27 2018-12-18 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs and methods of forming the same
US10141225B2 (en) 2017-04-28 2018-11-27 Taiwan Semiconductor Manufacturing Company, Ltd. Metal gates of transistors having reduced resistivity
US10115825B1 (en) * 2017-04-28 2018-10-30 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and method for FinFET device with asymmetric contact
DE102017122702B4 (de) 2017-04-28 2023-11-09 Taiwan Semiconductor Manufacturing Co. Ltd. Struktur und Verfahren für FinFET-Vorrichtung mit asymmetrischem Kontakt
US10157785B2 (en) 2017-05-01 2018-12-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10770286B2 (en) * 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10332965B2 (en) 2017-05-08 2019-06-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of fabricating the same
US10050149B1 (en) 2017-05-18 2018-08-14 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure for semiconductor device
CN108933173A (zh) * 2017-05-19 2018-12-04 中芯国际集成电路制造(上海)有限公司 半导体装置及其制造方法
US10269636B2 (en) 2017-05-26 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of fabricating the same
US10163621B1 (en) 2017-05-31 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method and structure for FinFET devices
US10522392B2 (en) 2017-05-31 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of fabricating the same
US9991268B1 (en) 2017-06-08 2018-06-05 Taiwan Semiconductor Manufacturing Co., Ltd. SRAM cell structure
US10283414B2 (en) 2017-06-20 2019-05-07 Taiwan Semiconductor Manufacturing Co., Ltd. Isolation manufacturing method for semiconductor structures
US11334703B2 (en) 2017-06-29 2022-05-17 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit layouts with fill feature shapes
US10720358B2 (en) 2017-06-30 2020-07-21 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having a liner layer with a configured profile and method of fabricating thereof
DE102018104944A1 (de) 2017-06-30 2019-01-03 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleiter-Bauelement mit einer Auskleidungsschicht mit einem konfigurierten Profil und Verfahren zu dessen Herstellung
US10797137B2 (en) * 2017-06-30 2020-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method for reducing Schottky barrier height and semiconductor device with reduced Schottky barrier height
US10468529B2 (en) 2017-07-11 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device structure with etch stop layer
US10157988B1 (en) 2017-07-18 2018-12-18 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device structure with dual spacers and method for forming the same
US10290635B2 (en) 2017-07-26 2019-05-14 Taiwan Semiconductor Manufacturing Co., Ltd. Buried interconnect conductor
US10283623B2 (en) 2017-07-27 2019-05-07 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuits with gate stacks
US10269624B2 (en) 2017-07-31 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Contact plugs and methods of forming same
US10685884B2 (en) 2017-07-31 2020-06-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device including a Fin-FET and method of manufacturing the same
US10510875B2 (en) 2017-07-31 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Source and drain structure with reduced contact resistance and enhanced mobility
DE102017126027B4 (de) 2017-07-31 2022-02-24 Taiwan Semiconductor Manufacturing Co., Ltd. Metallgatestruktur und Verfahren
US10283503B2 (en) 2017-07-31 2019-05-07 Taiwan Semiconductor Manufacturing Co., Ltd. Metal gate structure and methods thereof
US10670641B2 (en) 2017-08-22 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor test device and manufacturing method thereof
US10515850B2 (en) 2017-08-25 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method and IC design with non-linear power rails
US10403714B2 (en) 2017-08-29 2019-09-03 Taiwan Semiconductor Manufacturing Co., Ltd. Fill fins for semiconductor devices
US10535654B2 (en) 2017-08-30 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Cut metal gate with slanted sidewalls
US10685880B2 (en) 2017-08-30 2020-06-16 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for reducing contact depth variation in semiconductor fabrication
US10475654B2 (en) 2017-08-31 2019-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Wrap-around contact plug and method manufacturing same
US10515896B2 (en) 2017-08-31 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnect structure for semiconductor device and methods of fabrication thereof
US10164053B1 (en) 2017-08-31 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10535525B2 (en) 2017-08-31 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device structure
US10453753B2 (en) 2017-08-31 2019-10-22 Taiwan Semiconductor Manufacturing Co., Ltd. Using a metal-containing layer as an etching stop layer and to pattern source/drain regions of a FinFET
US10276720B2 (en) 2017-08-31 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming fin field effect transistor (FINFET) device structure
US10446555B2 (en) 2017-08-31 2019-10-15 Taiwan Semiconductor Manufacturing Company, Ltd. Buried metal track and methods forming same
US10374058B2 (en) 2017-09-15 2019-08-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for manufacturing the same
US10700177B2 (en) * 2017-09-27 2020-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with low resistivity contact structure and method for forming the same
US10868181B2 (en) 2017-09-27 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with blocking layer and method for forming the same
US10636673B2 (en) 2017-09-28 2020-04-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device structure
US10515687B2 (en) 2017-09-28 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Strap cell design for static random access memory (SRAM) array
US10686074B2 (en) 2017-09-28 2020-06-16 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device structure with doped region in source/drain structure and method for forming the same
US10074558B1 (en) 2017-09-28 2018-09-11 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET structure with controlled air gaps
US10276697B1 (en) 2017-10-27 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Negative capacitance FET with improved reliability performance
US10522557B2 (en) 2017-10-30 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Surface topography by forming spacer-like components
US10217815B1 (en) 2017-10-30 2019-02-26 Taiwan Semiconductor Manufacturing Co., Ltd Integrated circuit device with source/drain barrier
US10403551B2 (en) 2017-11-08 2019-09-03 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain features with an etch stop layer
US10872762B2 (en) 2017-11-08 2020-12-22 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming silicon oxide layer and semiconductor structure
US10367078B2 (en) 2017-11-09 2019-07-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and FinFET devices having shielding layers
DE102018107038B4 (de) 2017-11-09 2022-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zur herstellung einer durchkontaktierungsstruktur
US10439135B2 (en) 2017-11-09 2019-10-08 Taiwan Semiconductor Manufacturing Co., Ltd. VIA structure and methods of forming the same
US10680084B2 (en) 2017-11-10 2020-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial structures for fin-like field effect transistors
US10629708B2 (en) 2017-11-14 2020-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with barrier layer and method for forming the same
US10283624B1 (en) 2017-11-14 2019-05-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and method for forming the same
US10727178B2 (en) 2017-11-14 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Via structure and methods thereof
US10366915B2 (en) 2017-11-15 2019-07-30 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET devices with embedded air gaps and the fabrication thereof
US10468530B2 (en) 2017-11-15 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with source/drain multi-layer structure and method for forming the same
US10468527B2 (en) 2017-11-15 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Metal gate structure and methods of fabricating thereof
US10396184B2 (en) 2017-11-15 2019-08-27 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit device fins
US10515809B2 (en) 2017-11-15 2019-12-24 Taiwan Semiconductor Manufacturing Company, Ltd. Selective high-K formation in gate-last process
US10170322B1 (en) 2017-11-16 2019-01-01 Taiwan Semiconductor Manufacturing Co., Ltd. Atomic layer deposition based process for contact barrier layer
US10658508B2 (en) 2017-11-17 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with low resistance contact
US10629693B2 (en) 2017-11-17 2020-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with barrier layer and method for forming the same
US10978351B2 (en) 2017-11-17 2021-04-13 Taiwan Semiconductor Manufacturing Co., Ltd. Etch stop layer between substrate and isolation structure
US10727117B2 (en) 2017-11-20 2020-07-28 Taiwan Semiconductor Manufacturing Company Ltd. Method for manufacturing semiconductor structure
US11037924B2 (en) 2017-11-21 2021-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming source/drain contacts
US10418453B2 (en) 2017-11-22 2019-09-17 Taiwan Semiconductor Manufacturing Co., Ltd. Forming metal contacts on metal gates
US10867986B2 (en) 2017-11-24 2020-12-15 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device having fin structure
US10312350B1 (en) 2017-11-28 2019-06-04 International Business Machines Corporation Nanosheet with changing SiGe percentage for SiGe lateral recess
US10164048B1 (en) 2017-11-29 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming source/drain contacts
DE102018104004B4 (de) 2017-11-29 2021-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-Struktur und Verfahren mit verbessertem Gate-Kontakt und verbesserter Schwellenspannung
US10840376B2 (en) 2017-11-29 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure and method with enhanced gate contact and threshold voltage
US11011618B2 (en) 2017-11-30 2021-05-18 Taiwan Semiconductor Manufacturing Co., Ltd. Circuit devices with gate seals
US10510894B2 (en) 2017-11-30 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Isolation structure having different distances to adjacent FinFET devices
US10366982B2 (en) 2017-11-30 2019-07-30 Taiwan Semiconductor Manufacturing Co., Ltd. Structure with embedded memory device and contact isolation scheme
US10361120B2 (en) * 2017-11-30 2019-07-23 Taiwan Semiconductor Manufacturing Co., Ltd. Conductive feature formation and structure
US10319581B1 (en) 2017-11-30 2019-06-11 Taiwan Semiconductor Manufacturing Co., Ltd. Cut metal gate process for reducing transistor spacing
US10460994B2 (en) 2017-11-30 2019-10-29 Taiwan Semiconductor Manufacturing Co., Ltd. Residue-free metal gate cutting for fin-like field effect transistor
US10847413B2 (en) 2017-11-30 2020-11-24 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming contact plugs for semiconductor device
DE102018102448B4 (de) 2017-11-30 2023-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Bildung und Struktur leitfähiger Merkmale
US10177038B1 (en) 2017-11-30 2019-01-08 Taiwan Semiconductor Manufacturing Co., Ltd. Prevention of contact bottom void in semiconductor fabrication
US10861745B2 (en) 2017-11-30 2020-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
US10756114B2 (en) 2017-12-28 2020-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor circuit with metal structure and manufacturing method
US10608094B2 (en) 2018-01-23 2020-03-31 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming the same
US10461078B2 (en) 2018-02-26 2019-10-29 Taiwan Semiconductor Manufacturing Co., Ltd. Creating devices with multiple threshold voltage by cut-metal-gate process
US10867851B2 (en) 2018-02-26 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure and semiconductor device and method of forming the same
US10290535B1 (en) 2018-03-22 2019-05-14 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit fabrication with a passivation agent
US10867844B2 (en) 2018-03-28 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Wet cleaning with tunable metal recess for VIA plugs
US11145751B2 (en) * 2018-03-29 2021-10-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with doped contact plug and method for forming the same
US10854615B2 (en) 2018-03-30 2020-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET having non-merging epitaxially grown source/drains
US10629492B2 (en) 2018-04-27 2020-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure having a dielectric gate and methods thereof
US10699943B2 (en) 2018-04-30 2020-06-30 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming contacts in a semiconductor device
US10867848B2 (en) 2018-04-30 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10685966B2 (en) 2018-05-16 2020-06-16 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuits with contacting gate structures
US10529823B2 (en) 2018-05-29 2020-01-07 International Business Machines Corporation Method of manufacturing a semiconductor device having a metal gate with different lateral widths between spacers
US10504775B1 (en) 2018-05-31 2019-12-10 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming metal layer structures in semiconductor devices
US10529860B2 (en) 2018-05-31 2020-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and method for FinFET device with contact over dielectric gate
US10529414B2 (en) 2018-05-31 2020-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. SRAM cell having SiGe PMOS fin lines
US10483396B1 (en) * 2018-06-11 2019-11-19 Taiwan Semiconductor Manufacturing Company, Ltd. Interfacial layer between fin and source/drain region
US11107902B2 (en) 2018-06-25 2021-08-31 Taiwan Semiconductor Manufacturing Company, Ltd. Dielectric spacer to prevent contacting shorting
US10665506B2 (en) 2018-06-27 2020-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with reduced via bridging risk
US10950434B2 (en) 2018-06-27 2021-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of reducing gate spacer loss during semiconductor manufacturing
US10840153B2 (en) 2018-06-27 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Notched gate structure fabrication
US11302535B2 (en) 2018-06-27 2022-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Performing annealing process to improve fin quality of a FinFET semiconductor
US10388771B1 (en) 2018-06-28 2019-08-20 Taiwan Semiconductor Manufacturing Co., Ltd. Method and device for forming cut-metal-gate feature
US10665673B2 (en) 2018-06-28 2020-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit structure with non-gated well tap cell
US10790352B2 (en) 2018-06-28 2020-09-29 Taiwan Semiconductor Manufacturing Co., Ltd. High density capacitor implemented using FinFET
US11410890B2 (en) 2018-06-28 2022-08-09 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial layers in source/drain contacts and methods of forming the same
US11694933B2 (en) 2018-06-28 2023-07-04 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming metal gate spacer
US10755917B2 (en) 2018-06-29 2020-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Treatment for adhesion improvement
US10868128B2 (en) 2018-06-29 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Ohmic contact structure, semiconductor device including an ohmic contact structure, and method for forming the same
US11315933B2 (en) 2018-06-29 2022-04-26 Taiwan Semiconductor Manufacturing Co., Ltd. SRAM structure and method for forming the same
US10468500B1 (en) 2018-06-29 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET fabrication methods
US11081356B2 (en) 2018-06-29 2021-08-03 Taiwan Semiconductor Manufacturing Co., Ltd. Method for metal gate cut and structure thereof
US11081403B2 (en) 2018-06-29 2021-08-03 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming contact features in field-effect transistors
US11244898B2 (en) 2018-06-29 2022-02-08 Taiwan Semiconductor Manufacturing Co., Ltd Integrated circuit interconnect structures with air gaps
US10867805B2 (en) 2018-06-29 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Selective removal of an etching stop layer for improving overlay shift tolerance
US11018053B2 (en) 2018-06-29 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with material modification and low resistance plug
US11127631B2 (en) 2018-07-13 2021-09-21 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with contact structures
US10541175B1 (en) 2018-07-13 2020-01-21 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with fin structures
US10755945B2 (en) 2018-07-16 2020-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Metal contacts on metal gates and methods thereof
US10854503B2 (en) 2018-07-16 2020-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with air gap and method sealing the air gap
US11171053B2 (en) 2018-07-27 2021-11-09 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor device and related methods
US10734474B2 (en) 2018-07-30 2020-08-04 Taiwan Semiconductor Manufacturing Co., Ltd. Metal-insulator-metal structure and methods of fabrication thereof
US10840189B2 (en) 2018-07-30 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit devices having raised via contacts and methods of fabricating the same
US10886226B2 (en) 2018-07-31 2021-01-05 Taiwan Semiconductor Manufacturing Co, Ltd. Conductive contact having staircase barrier layers
US11081395B2 (en) 2018-07-31 2021-08-03 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field effect transistor having air gap and method for manufacturing the same
US10714342B2 (en) * 2018-07-31 2020-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming the same
US11038059B2 (en) 2018-07-31 2021-06-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of forming the same
US11069692B2 (en) 2018-07-31 2021-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET SRAM cells with dielectric fins
US11121129B2 (en) 2018-07-31 2021-09-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device
US11217479B2 (en) 2018-07-31 2022-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Multiple metallization scheme
US10658237B2 (en) 2018-07-31 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices
US11031300B2 (en) 2018-07-31 2021-06-08 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method for manufacturing the same
US10868184B2 (en) 2018-07-31 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device structure with hard mask layer over gate structure and method for forming the same
US11978802B2 (en) 2018-07-31 2024-05-07 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET devices and methods of forming the same
US10868182B2 (en) 2018-07-31 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Field effect transistor and manufacturing method thereof
US10840342B2 (en) 2018-08-14 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming source/drain contacts in field-effect transistors
US10797161B2 (en) 2018-08-14 2020-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing semiconductor structure using selective forming process
US10679856B2 (en) 2018-08-14 2020-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device structure with insulating structure over fin isolation structure and method for forming the same
US10693004B2 (en) 2018-08-14 2020-06-23 Taiwan Semiconductor Manufactruing Co., Ltd. Via structure with low resistivity and method for forming the same
DE102019120821A1 (de) 2018-08-15 2020-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Struktur und prozess einer integrierten schaltung mit einer latch-up-unterdrückung
US11062963B2 (en) 2018-08-15 2021-07-13 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and process of integrated circuit having latch-up suppression
US11018011B2 (en) 2018-08-29 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming contact features in semiconductor devices
US10868020B2 (en) 2018-08-29 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Well strap structures and methods of forming the same
US11222951B2 (en) 2018-08-31 2022-01-11 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial source/drain structure and method
US11437284B2 (en) * 2018-08-31 2022-09-06 Applied Materials, Inc. Contact over active gate structure
US11043425B2 (en) 2018-08-31 2021-06-22 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of reducing parasitic capacitance in semiconductor devices
US10868118B2 (en) 2018-08-31 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming epitaxial source/drain features in semiconductor devices
US10930564B2 (en) 2018-08-31 2021-02-23 Taiwan Semiconductor Manufacturing Co., Ltd. Metal gate structure cutting process
US10861928B2 (en) 2018-09-18 2020-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuits with capacitors
US11101385B2 (en) 2018-09-19 2021-08-24 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device structure with air gap and method for forming the same
US10998241B2 (en) 2018-09-19 2021-05-04 Taiwan Semiconductor Manufacturing Co., Ltd. Selective dual silicide formation using a maskless fabrication process flow
US10923393B2 (en) 2018-09-24 2021-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Contacts and interconnect structures in field-effect transistors
US11437385B2 (en) 2018-09-24 2022-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET SRAM cells with reduced fin pitch
US10872891B2 (en) 2018-09-25 2020-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuits with gate cut features
US11217585B2 (en) 2018-09-25 2022-01-04 Taiwan Semiconductor Manufacturing Co., Ltd. Forming dielectric dummy fins with different heights in different regions of a semiconductor device
US11508827B2 (en) 2018-09-26 2022-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. Air spacer for a gate structure of a transistor
US11210447B2 (en) 2018-09-26 2021-12-28 Taiwan Semiconductor Manufacturing Co., Ltd. Reconfiguring layout and sizing for transistor components to simultaneously optimize logic devices and non-logic devices
US11563167B2 (en) 2018-09-26 2023-01-24 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and method for an MRAM device with a multi-layer top electrode
US11004740B2 (en) 2018-09-27 2021-05-11 Taiwan Semicondctor Manufacturing Co., Ltd. Structure and method for interconnection with self-alignment
US11411090B2 (en) 2018-09-27 2022-08-09 Taiwan Semiconductor Manufacturing Co., Ltd. Contact structures for gate-all-around devices and methods of forming the same
US11011636B2 (en) 2018-09-27 2021-05-18 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device structure with hard mask layer over gate structure and method for forming the same
US11374126B2 (en) 2018-09-27 2022-06-28 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET structure with fin top hard mask and method of forming the same
US11171209B2 (en) 2018-09-27 2021-11-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
US10840133B2 (en) 2018-09-27 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with staggered selective growth
US10964816B2 (en) 2018-09-27 2021-03-30 Taiwan Semiconductor Manufacturing Co., Ltd. Method and device for boosting performance of FinFETs via strained spacer
US11349008B2 (en) 2018-09-27 2022-05-31 Taiwan Semiconductor Manufacturing Co., Ltd. Negative capacitance transistor having a multilayer ferroelectric structure or a ferroelectric layer with a gradient doping profile
US11257671B2 (en) 2018-09-28 2022-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system of control of epitaxial growth
US11069793B2 (en) 2018-09-28 2021-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Reducing parasitic capacitance for gate-all-around device by forming extra inner spacers
US10672665B2 (en) 2018-09-28 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor device structure and method for forming the same
US11222958B2 (en) 2018-09-28 2022-01-11 Taiwan Semiconductor Manufacturing Co., Ltd. Negative capacitance transistor with external ferroelectric structure
US11107925B2 (en) 2018-09-28 2021-08-31 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming contact features in field-effect transistors
US11205714B2 (en) 2018-09-28 2021-12-21 Taiwan Semiconductor Manufacturing Co., Ltd. Dummy structure at fin cut
US10923474B2 (en) 2018-09-28 2021-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure having gate-all-around devices
US10971605B2 (en) 2018-10-22 2021-04-06 Taiwan Semiconductor Manufacturing Co., Ltd. Dummy dielectric fin design for parasitic capacitance reduction
US11139203B2 (en) 2018-10-22 2021-10-05 Taiwan Semiconductor Manufacturing Co., Ltd. Using mask layers to facilitate the formation of self-aligned contacts and vias
US10847373B2 (en) 2018-10-23 2020-11-24 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming silicide contact in field-effect transistors
US10825721B2 (en) 2018-10-23 2020-11-03 Taiwan Semiconductor Manufacturing Co., Ltd. Insulating cap on contact structure and method for forming the same
US11380682B2 (en) 2018-10-23 2022-07-05 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuits with FinFET gate structures
US10978571B2 (en) * 2018-10-24 2021-04-13 International Business Machines Corporation Self-aligned contact with metal-insulator transition materials
US10868018B2 (en) 2018-10-25 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. SRAM structure and connection
US10937876B2 (en) 2018-10-26 2021-03-02 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain feature to contact interfaces
US10950729B2 (en) 2018-10-26 2021-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Contact structure with insulating cap
US10985022B2 (en) 2018-10-26 2021-04-20 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structures having interfacial layers
US10943983B2 (en) 2018-10-29 2021-03-09 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuits having protruding interconnect conductors
US10916550B2 (en) 2018-10-30 2021-02-09 Taiwan Semiconductor Manufacturing Co., Ltd. Memory devices with gate all around transistors
US11145544B2 (en) 2018-10-30 2021-10-12 Taiwan Semiconductor Manufacturing Co., Ltd. Contact etchback in room temperature ionic liquid
US10867842B2 (en) 2018-10-31 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method for shrinking openings in forming integrated circuits
US11043558B2 (en) 2018-10-31 2021-06-22 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain metal contact and formation thereof
US10998238B2 (en) 2018-10-31 2021-05-04 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuits with buried interconnect conductors
US10944009B2 (en) 2018-10-31 2021-03-09 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of fabricating a FinFET device with wrap-around silicide source/drain structure
US10971408B2 (en) 2018-10-31 2021-04-06 Taiwan Semiconductor Manufacturing Co., Ltd. Contact air gap formation and structures thereof
US11038029B2 (en) 2018-11-08 2021-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US10692775B2 (en) 2018-11-09 2020-06-23 Applied Materials, Inc. Fin damage reduction during punch through implantation of FinFET device
US10686033B2 (en) * 2018-11-09 2020-06-16 Applied Materials, Inc. Fin damage reduction during punch through implantation of FinFET device
US11476196B2 (en) 2018-11-27 2022-10-18 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with multi-layer dielectric
US11195951B2 (en) 2018-11-27 2021-12-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with self-aligned wavy contact profile and method of forming the same
US10923598B2 (en) 2018-11-27 2021-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around structure and methods of forming the same
US11264268B2 (en) 2018-11-29 2022-03-01 Taiwan Semiconductor Mtaiwananufacturing Co., Ltd. FinFET circuit devices with well isolation
US11271094B2 (en) 2018-11-29 2022-03-08 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of manufacturing the same
US10879400B2 (en) 2018-12-24 2020-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Field effect transistor and method of manufacturing the same
US10868000B2 (en) 2019-01-25 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with epitaxial structure and method for forming the same
US10777455B2 (en) 2019-01-29 2020-09-15 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-etching process for forming via opening in semiconductor device structure
US11823896B2 (en) 2019-02-22 2023-11-21 Taiwan Semiconductor Manufacturing Co., Ltd. Conductive structure formed by cyclic chemical vapor deposition
US10868171B2 (en) 2019-02-26 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with gate dielectric layer and method for forming the same
US10872810B2 (en) 2019-03-14 2020-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor device structure and method for forming the same
US11469109B2 (en) 2019-03-14 2022-10-11 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure having metal contact features and method for forming the same
US10978354B2 (en) 2019-03-15 2021-04-13 Taiwan Semiconductor Manufacturing Co., Ltd. Selective dual silicide formation
US11043594B2 (en) 2019-03-26 2021-06-22 Taiwan Semiconductor Manufacturing Co., Ltd. Low parasitic resistance contact structure
US11101353B2 (en) * 2019-04-17 2021-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
US11121234B2 (en) 2019-04-24 2021-09-14 Taiwan Semiconductor Manufacturing Co., Ltd. Stacked gate spacers
US10971630B2 (en) 2019-04-24 2021-04-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure having both gate-all-around devices and planar devices
US11232943B2 (en) 2019-04-24 2022-01-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method and structure for semiconductor interconnect
US11031336B2 (en) 2019-04-25 2021-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor memory device having contact element of rectangular shape
US11094695B2 (en) * 2019-05-17 2021-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit device and method of forming the same
US10818768B1 (en) 2019-05-30 2020-10-27 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming metal cap layers to improve performance of semiconductor structure
US11183580B2 (en) 2019-05-30 2021-11-23 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with metal gate stack
US10755964B1 (en) 2019-05-31 2020-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain isolation structure and methods thereof
US11342229B2 (en) 2019-06-13 2022-05-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming a semiconductor device structure having an electrical connection structure
US11043595B2 (en) 2019-06-14 2021-06-22 Taiwan Semiconductor Manufacturing Co., Ltd. Cut metal gate in memory macro edge and middle strap
US10872821B1 (en) 2019-06-24 2020-12-22 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
US11245071B2 (en) 2019-06-25 2022-02-08 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell, method of forming the same, and semiconductor device having the same
US11515197B2 (en) 2019-07-11 2022-11-29 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and method of forming the semiconductor device
US11152486B2 (en) 2019-07-15 2021-10-19 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET semiconductor device having source/drain contact(s) separated by airgap spacer(s) from the gate stack(s) to reduce parasitic capacitance
US20210020635A1 (en) * 2019-07-17 2021-01-21 Nanya Technology Corporation Semiconductor structure and method of formation
US11476166B2 (en) 2019-07-30 2022-10-18 Taiwan Semiconductor Manufacturing Co., Ltd. Nano-sheet-based complementary metal-oxide-semiconductor devices with asymmetric inner spacers
US11145660B2 (en) 2019-07-31 2021-10-12 Taiwan Semiconductor Manufacturing Co., Ltd. Dual-port SRAM cell structure
US11532550B2 (en) 2019-07-31 2022-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure having a multi-layer conductive feature and method making the same
US11152488B2 (en) 2019-08-21 2021-10-19 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around structure with dummy pattern top in channel region and methods of forming the same
US20210057273A1 (en) 2019-08-22 2021-02-25 Taiwan Semiconductor Manufacturing Co., Ltd. Barrier-Less Structures
US11069811B2 (en) 2019-08-22 2021-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US11127639B2 (en) 2019-08-22 2021-09-21 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with fin structures
US11189531B2 (en) 2019-08-23 2021-11-30 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field-effect transistor device and method
US11710667B2 (en) 2019-08-27 2023-07-25 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around device with trimmed channel and dipoled dielectric layer and methods of forming the same
US11195934B2 (en) 2019-08-29 2021-12-07 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and method for bi-layer self-aligned contact
US11158721B2 (en) 2019-08-30 2021-10-26 Taiwan Semiconductor Manufacturing Co., Ltd. Metal oxide interlayer structure for nFET and pFET
US11227828B2 (en) 2019-09-16 2022-01-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US11227950B2 (en) 2019-09-16 2022-01-18 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming air spacers in semiconductor devices
US11239114B2 (en) 2019-09-16 2022-02-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with reduced contact resistance and methods of forming the same
US11282920B2 (en) 2019-09-16 2022-03-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with air gap on gate structure and method for forming the same
US10867863B1 (en) 2019-09-16 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US10937884B1 (en) 2019-09-16 2021-03-02 Taiwan Semiconductor Manufacturing Co., Ltd. Gate spacer with air gap for semiconductor device structure and method for forming the same
US10937652B1 (en) 2019-09-16 2021-03-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method and structure of cut end with self-aligned double patterning
US11362212B2 (en) 2019-09-17 2022-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Contact interface engineering for reducing contact resistance
US11335592B2 (en) 2019-09-17 2022-05-17 Taiwan Semiconductor Manufacturing Co., Ltd. Contact resistance between via and conductive line
US11315785B2 (en) 2019-09-17 2022-04-26 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial blocking layer for multi-gate devices and fabrication methods thereof
US11508822B2 (en) 2019-09-25 2022-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain via having reduced resistance
US11177344B2 (en) 2019-09-25 2021-11-16 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-gate device with air gap spacer and fabrication methods thereof
US11282935B2 (en) 2019-09-26 2022-03-22 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around device with protective dielectric layer and method of forming the same
US11387146B2 (en) 2019-09-26 2022-07-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with air gaps between metal gates and method of forming the same
US11621224B2 (en) 2019-09-26 2023-04-04 Taiwan Semiconductor Manufacturing Co. Ltd. Contact features and methods of fabricating the same in semiconductor devices
US11508624B2 (en) 2019-09-26 2022-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around device with different channel semiconductor materials and method of forming the same
US11342222B2 (en) 2019-09-26 2022-05-24 Taiwan Semiconductor Manufacturing Co., Ltd. Self-aligned scheme for semiconductor device and method of forming the same
US11239121B2 (en) 2019-09-26 2022-02-01 Taiwan Semiconductor Manufacturing Co., Ltd. Metal gate contacts and methods of forming the same
US11145765B2 (en) 2019-09-26 2021-10-12 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around structure with self substrate isolation and methods of forming the same
US11271083B2 (en) 2019-09-27 2022-03-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device, FinFET device and methods of forming the same
US11587927B2 (en) 2019-09-27 2023-02-21 Taiwan Semiconductor Manufacturing Co., Ltd. Crown bulk for FinFET device
CN112582347A (zh) 2019-09-27 2021-03-30 台湾积体电路制造股份有限公司 半导体装置的形成方法
US11581226B2 (en) 2019-09-27 2023-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with tunable epitaxy structures and method of forming the same
US11328990B2 (en) 2019-09-27 2022-05-10 Taiwan Semiconductor Manufacturing Co., Ltd. Via structure having a metal hump for low interface resistance
US11211116B2 (en) 2019-09-27 2021-12-28 Taiwan Semiconductor Manufacturing Co., Ltd. Embedded SRAM write assist circuit
US11443980B2 (en) 2019-09-27 2022-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating semiconductor device with metal pad extending into top metal layer
US11296084B2 (en) 2019-09-29 2022-04-05 Taiwan Semiconductor Manufacturing Company, Ltd. Deposition method, semiconductor device and method of fabricating the same
US11289417B2 (en) 2019-09-30 2022-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and methods of forming the same
US11264393B2 (en) 2019-09-30 2022-03-01 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain contact having a protruding segment
US11158539B2 (en) 2019-10-01 2021-10-26 Taiwan Semiconductor Manufacturing Co., Ltd. Method and structure for barrier-less plug
US11189708B2 (en) 2019-10-17 2021-11-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with gate stack and method for forming the same
US11211470B2 (en) * 2019-10-18 2021-12-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11201229B2 (en) 2019-10-18 2021-12-14 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with metal gate stack
US11037925B2 (en) 2019-10-18 2021-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and method of integrated circuit having decouple capacitance
US11251305B2 (en) 2019-10-25 2022-02-15 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor device structure and method for forming the same
US11322495B2 (en) 2019-10-28 2022-05-03 Taiwan Semiconductor Manufacturing Company, Ltd. Complementary metal-oxide-semiconductor device and method of manufacturing the same
US11233134B2 (en) 2019-12-19 2022-01-25 Taiwan Semiconductor Manufacturing Co., Ltd. Field effect transistors with dual silicide contact structures
US11508623B2 (en) 2019-12-31 2022-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. Local gate height tuning by CMP and dummy gate design
US11495491B2 (en) 2020-01-16 2022-11-08 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with stacked conductive structures
US11302692B2 (en) 2020-01-16 2022-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the same
US11476365B2 (en) 2020-01-16 2022-10-18 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor device structure and method for forming the same
US11302784B2 (en) 2020-01-17 2022-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having contact feature and method of fabricating the same
US11355615B2 (en) 2020-01-17 2022-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET having fluorine-doped gate sidewall spacers
US11244899B2 (en) 2020-01-17 2022-02-08 Taiwan Semiconductor Manufacturing Co., Ltd. Butted contacts and methods of fabricating the same in semiconductor devices
US11201106B2 (en) 2020-01-24 2021-12-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with conductors embedded in a substrate
US11257932B2 (en) * 2020-01-30 2022-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor device structure and method for forming the same
US11177383B2 (en) 2020-02-10 2021-11-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US11189706B2 (en) 2020-02-11 2021-11-30 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET structure with airgap and method of forming the same
US11830948B2 (en) 2020-02-19 2023-11-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US11201085B2 (en) 2020-02-25 2021-12-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure having air gap and method for forming the same
US11373947B2 (en) 2020-02-26 2022-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming interconnect structures of semiconductor device
US11133230B2 (en) 2020-02-26 2021-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with dual isolation liner and method of forming the same
US11715781B2 (en) 2020-02-26 2023-08-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with improved capacitors
US11211256B2 (en) 2020-02-26 2021-12-28 Taiwan Semiconductor Manufacturing Co., Ltd Method with CMP for metal ion prevention
CN113113359A (zh) 2020-02-27 2021-07-13 台湾积体电路制造股份有限公司 半导体装置的制造方法
US11545432B2 (en) 2020-02-27 2023-01-03 Taiwan Semiconductor Manufacturing Co., Ltd Semiconductor device with source and drain vias having different sizes
US11515216B2 (en) 2020-02-27 2022-11-29 Taiwan Semiconductor Manufacturing Co., Ltd. Dual silicide structure and methods thereof
US11152475B2 (en) 2020-02-27 2021-10-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming source/drain contacts utilizing an inhibitor
CN113113311A (zh) 2020-02-27 2021-07-13 台湾积体电路制造股份有限公司 半导体装置的形成方法
US11404570B2 (en) 2020-02-27 2022-08-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with embedded ferroelectric field effect transistors
US11374128B2 (en) 2020-02-27 2022-06-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method and structure for air gap inner spacer in gate-all-around devices
TW202145443A (zh) 2020-02-27 2021-12-01 台灣積體電路製造股份有限公司 半導體裝置的形成方法
TW202139270A (zh) 2020-02-27 2021-10-16 台灣積體電路製造股份有限公司 半導體裝置的形成方法
US11515211B2 (en) 2020-02-27 2022-11-29 Taiwan Semiconductor Manufacturing Co., Ltd. Cut EPI process and structures
US11588038B2 (en) 2020-03-30 2023-02-21 Taiwan Semiconductor Manufacturing Co., Ltd. Circuit structure with gate configuration
DE102021104484A1 (de) 2020-03-30 2021-09-30 Taiwan Semiconductor Manufacturing Co., Ltd. Schaltungsstruktur mit gatekonfiguration
DE102020126060A1 (de) 2020-03-31 2021-09-30 Taiwan Semiconductor Manufacturing Co., Ltd. Mehrschichtige high-k-gatedielektrikumstruktur
US12022643B2 (en) 2020-03-31 2024-06-25 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-layer high-k gate dielectric structure
US11374105B2 (en) 2020-03-31 2022-06-28 Taiwan Semiconductor Manufacturing Co., Ltd. Nanosheet device with dipole dielectric layer and methods of forming the same
US11450602B2 (en) 2020-04-01 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Hybrid method for forming semiconductor interconnect structure
US11251073B2 (en) 2020-04-01 2022-02-15 Taiwan Semiconductor Manufacturing Co. Selective deposition of barrier layer
US11309398B2 (en) 2020-04-01 2022-04-19 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing method for the semiconductor device
US11296202B2 (en) 2020-04-01 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Memory chip structure having GAA transistors with different threshold voltages and work functions for improving performances in multiple applications
US11158632B1 (en) 2020-04-01 2021-10-26 Taiwan Semiconductor Manufacturing Co., Ltd Fin-based strap cell structure for improving memory performance
US11302796B2 (en) 2020-04-01 2022-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming self-aligned source/drain metal contacts
US11177212B2 (en) 2020-04-13 2021-11-16 Taiwan Semiconductor Manufacturing Co., Ltd. Contact formation method and related structure
US11342501B2 (en) 2020-04-17 2022-05-24 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell, method of forming the same, and semiconductor device having the same
DE102020121223A1 (de) 2020-04-24 2021-10-28 Taiwan Semiconductor Manufacturing Co., Ltd. Selektive Auskleidung auf Rückseitendurchkontaktierung und deren Verfahren
US11121138B1 (en) 2020-04-24 2021-09-14 Taiwan Semiconductor Manufacturing Co., Ltd. Low resistance pickup cells for SRAM
US11342413B2 (en) 2020-04-24 2022-05-24 Taiwan Semiconductor Manufacturing Co., Ltd. Selective liner on backside via and method thereof
US11764220B2 (en) 2020-04-27 2023-09-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device by patterning a serpentine cut pattern
US11450660B2 (en) 2020-04-27 2022-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of fabricating the same
DE102021109275A1 (de) 2020-05-13 2021-11-18 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around-vorrichtungen mit selbstausgerichteter abdeckung zwischen kanal und rückseitiger leistungsschiene
US11257712B2 (en) 2020-05-13 2022-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain contact formation methods and devices
US11670692B2 (en) 2020-05-13 2023-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around devices having self-aligned capping between channel and backside power rail
US11631745B2 (en) 2020-05-15 2023-04-18 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with uneven gate profile
US11996409B2 (en) 2020-05-20 2024-05-28 Taiwan Semiconductor Manufacturing Co., Ltd. Stacking CMOS structure
US11410876B2 (en) 2020-05-28 2022-08-09 Taiwan Semiconductor Manufacturing Co., Ltd Semiconductor device with air gaps and method of fabrication thereof
US11929329B2 (en) 2020-05-28 2024-03-12 Taiwan Semiconductor Manufacturing Company, Ltd. Damascene process using cap layer
DE102020131611A1 (de) 2020-05-28 2021-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtung mit luftspalten und verfahren zu deren herstellung
US11527539B2 (en) 2020-05-29 2022-12-13 Taiwan Semiconductor Manufacturing Co., Ltd. Four-poly-pitch SRAM cell with backside metal tracks
US11699742B2 (en) 2020-05-29 2023-07-11 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with varying numbers of channel layers and method of fabrication thereof
US11443987B2 (en) 2020-05-29 2022-09-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with backside air gap dielectric
US11527533B2 (en) 2020-05-29 2022-12-13 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET pitch scaling
US11302798B2 (en) 2020-05-29 2022-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with air gate spacer and air gate cap
US11637126B2 (en) 2020-05-29 2023-04-25 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and method of forming the same
US11361994B2 (en) 2020-06-08 2022-06-14 Taiwan Semiconductor Manufacturing Co., Ltd. Fully self-aligned interconnect structure
US11398550B2 (en) 2020-06-15 2022-07-26 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with facet S/D feature and methods of forming the same
US11282943B2 (en) 2020-06-15 2022-03-22 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-gate devices and fabricating the same with etch rate modulation
US11637099B2 (en) 2020-06-15 2023-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Forming ESD devices using multi-gate compatible processes
US11631736B2 (en) 2020-06-15 2023-04-18 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial source/drain feature with enlarged lower section interfacing with backside via
US11367621B2 (en) 2020-06-15 2022-06-21 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US20210391470A1 (en) 2020-06-15 2021-12-16 Taiwan Semiconductor Manufacturing Company, Ltd. Layered structure, semiconductor device including the same, and manufacturing method thereof
US11316023B2 (en) 2020-06-15 2022-04-26 Taiwan Semiconductor Manufacturing Co., Ltd. Dumbbell shaped self-aligned capping layer over source/drain contacts and method thereof
US11444025B2 (en) 2020-06-18 2022-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor and fabrication method thereof
US12058867B2 (en) 2020-06-18 2024-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device
US11145734B1 (en) 2020-06-29 2021-10-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with dummy fin and liner and method of forming the same
US11233005B1 (en) 2020-07-10 2022-01-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing an anchor-shaped backside via
US11664278B2 (en) 2020-07-22 2023-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with L-shape conductive feature and methods of forming the same
US11276643B2 (en) 2020-07-22 2022-03-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with backside spacer and methods of forming the same
US11456211B2 (en) 2020-07-30 2022-09-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming interconnect structure
US11532718B2 (en) 2020-07-30 2022-12-20 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET having a gate dielectric comprising a multi-layer structure including an oxide layer with different thicknesses on side and top surfaces of the fins
US11862701B2 (en) 2020-07-31 2024-01-02 Taiwan Semiconductor Manufacturing Co., Ltd. Stacked multi-gate structure and methods of fabricating the same
US11489057B2 (en) 2020-08-07 2022-11-01 Taiwan Semiconductor Manufacturing Co., Ltd. Contact structures in semiconductor devices
US11302816B2 (en) 2020-08-11 2022-04-12 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method for forming the same
US12046479B2 (en) 2020-08-13 2024-07-23 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-containing STI liner for SiGe channel
US11374088B2 (en) 2020-08-14 2022-06-28 Taiwan Semiconductor Manufacturing Co., Ltd. Leakage reduction in gate-all-around devices
US11935941B2 (en) 2020-08-14 2024-03-19 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and method for manufacturing thereof
US11482594B2 (en) 2020-08-27 2022-10-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with backside power rail and method thereof
US11404321B2 (en) 2020-08-31 2022-08-02 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of manufacturing the same
US11349002B2 (en) 2020-09-25 2022-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Isolation structure for for isolating epitaxially grown source/drain regions and method of fabrication thereof
US11658119B2 (en) 2020-10-27 2023-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Backside signal interconnection
US12107087B2 (en) 2020-10-30 2024-10-01 Taiwan Semiconductor Manufacturing Company, Ltd Semiconductor device with gate isolation structure and method for forming the same
US11735470B2 (en) 2020-11-13 2023-08-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming semiconductor device structure with source/drain contact
US11482451B2 (en) 2020-11-20 2022-10-25 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structures
KR20220085857A (ko) * 2020-12-15 2022-06-23 삼성전자주식회사 반도체 소자 및 이의 제조 방법
US11670681B2 (en) 2021-01-14 2023-06-06 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming fully strained channels
US11658216B2 (en) 2021-01-14 2023-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method and structure for metal gate boundary isolation
US12089414B2 (en) 2021-01-15 2024-09-10 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and method of forming the same
US12057341B2 (en) 2021-01-27 2024-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with gate cut structure and method of forming the same
US11538927B2 (en) 2021-01-28 2022-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. Nanostructures and method for manufacturing the same
US11621197B2 (en) 2021-02-15 2023-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with gate cut feature and method for forming the same
US11876119B2 (en) 2021-03-05 2024-01-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with gate isolation features and fabrication method of the same
US11538858B2 (en) 2021-03-05 2022-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device, method of forming the same, and memory array
US11482518B2 (en) 2021-03-26 2022-10-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structures having wells with protruding sections for pickup cells
US11605558B2 (en) 2021-03-26 2023-03-14 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit interconnect structure having discontinuous barrier layer and air gap
US11901228B2 (en) 2021-03-31 2024-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Self-aligned scheme for semiconductor device and method of forming the same
US11749729B2 (en) 2021-03-31 2023-09-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device, integrated circuit component and manufacturing methods thereof
US11646346B2 (en) 2021-04-08 2023-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure with air spacer for semiconductor device and method for forming the same
US11784228B2 (en) 2021-04-09 2023-10-10 Taiwan Semiconductor Manufacturing Company, Ltd. Process and structure for source/drain contacts
US11710664B2 (en) 2021-04-15 2023-07-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure with backside via contact and a protection liner layer
US11848372B2 (en) 2021-04-21 2023-12-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method and structure for reducing source/drain contact resistance at wafer backside
US11908701B2 (en) 2021-04-22 2024-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Patterning method and manufacturing method of semiconductor device
US12010928B2 (en) 2021-04-23 2024-06-11 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell, semiconductor device having the same, and methods of manufacturing the same
US11737287B2 (en) 2021-04-23 2023-08-22 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device, method of forming the same, and semiconductor device having the same
US11792977B2 (en) 2021-05-13 2023-10-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor memory structure
US11810919B2 (en) 2021-06-17 2023-11-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure with conductive via structure and method for forming the same
US11996321B2 (en) 2021-06-17 2024-05-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method for forming the same
US12113113B2 (en) 2021-07-29 2024-10-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with a core-shell feature and method for forming the same
US12119345B2 (en) 2021-08-06 2024-10-15 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method for forming the same
US11957070B2 (en) 2021-08-06 2024-04-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device, memory cell and method of forming the same
US12062692B2 (en) 2021-08-27 2024-08-13 Taiwan Semiconductor Manufacturing Company, Ltd. Tapered dielectric layer for preventing electrical shorting between gate and back side via
US11996453B2 (en) 2021-08-27 2024-05-28 Taiwan Semiconductor Manufacturing Company, Ltd. Introducing fluorine to gate after work function metal deposition
US12074063B2 (en) 2021-08-30 2024-08-27 Taiwan Semiconductor Manufacturing Company, Ltd. Contact formation method and related structure
US12080769B2 (en) 2022-02-15 2024-09-03 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure with silicide and method for forming the same
US12046476B2 (en) 2022-03-25 2024-07-23 Taiwan Semiconductor Manufacturing Company, Ltd. Wet etching chemistry and method of forming semiconductor device using the same

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3413876B2 (ja) * 1992-07-08 2003-06-09 セイコーエプソン株式会社 半導体装置
US6017790A (en) * 1998-07-06 2000-01-25 United Microelectronics Corp. Method of manufacturing embedded dynamic random access memory
KR20000027908A (ko) 1998-10-29 2000-05-15 로버트 에이치. 씨. 챠오 임베디드 디램의 제조 방법
JP4750342B2 (ja) * 2002-07-03 2011-08-17 ルネサスエレクトロニクス株式会社 Ｍｏｓ−ｆｅｔおよびその製造方法、並びに半導体装置
US20050046312A1 (en) 2003-09-01 2005-03-03 Fuji Photo Film Co., Ltd. Laminated structure, piezoelectric actuator and method of manufacturing the same
US7057216B2 (en) 2003-10-31 2006-06-06 International Business Machines Corporation High mobility heterojunction complementary field effect transistors and methods thereof
US7023018B2 (en) * 2004-04-06 2006-04-04 Texas Instruments Incorporated SiGe transistor with strained layers
US7402872B2 (en) 2004-11-18 2008-07-22 Intel Corporation Method for forming an integrated circuit
JP4369359B2 (ja) * 2004-12-28 2009-11-18 富士通マイクロエレクトロニクス株式会社 半導体装置
TWI263265B (en) 2005-02-13 2006-10-01 United Microelectronics Corp Method for fabricating ultra-high tensile-stressed film and strained-silicon transistors thereof
US7413961B2 (en) * 2006-05-17 2008-08-19 Chartered Semiconductor Manufacturing Ltd. Method of fabricating a transistor structure
US7754571B2 (en) 2006-11-03 2010-07-13 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming a strained channel in a semiconductor device
US7968952B2 (en) * 2006-12-29 2011-06-28 Intel Corporation Stressed barrier plug slot contact structure for transistor performance enhancement
US7719062B2 (en) 2006-12-29 2010-05-18 Intel Corporation Tuned tensile stress low resistivity slot contact structure for n-type transistor performance enhancement
US8344447B2 (en) * 2007-04-05 2013-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Silicon layer for stopping dislocation propagation
US8110877B2 (en) 2008-12-19 2012-02-07 Intel Corporation Metal-insulator-semiconductor tunneling contacts having an insulative layer disposed between source/drain contacts and source/drain regions
KR101552938B1 (ko) 2009-02-02 2015-09-14 삼성전자주식회사 스트레스 생성층을 갖는 반도체 소자의 제조방법
US20100276810A1 (en) 2009-05-04 2010-11-04 Vanguard International Semiconductor Corporation Semiconductor device and fabrication method thereof
US8264032B2 (en) * 2009-09-01 2012-09-11 Taiwan Semiconductor Manufacturing Company, Ltd. Accumulation type FinFET, circuits and fabrication method thereof
US8264021B2 (en) 2009-10-01 2012-09-11 Taiwan Semiconductor Manufacturing Company, Ltd. Finfets and methods for forming the same
US8877581B2 (en) * 2009-08-24 2014-11-04 Texas Instruments Incorporated Strain-engineered MOSFETs having rimmed source-drain recesses
JP5559639B2 (ja) * 2010-08-25 2014-07-23 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8901537B2 (en) * 2010-12-21 2014-12-02 Intel Corporation Transistors with high concentration of boron doped germanium
FR2979480B1 (fr) * 2011-08-25 2013-09-27 Commissariat Energie Atomique Procede de realisation d'un dispositif a transistors contraints par siliciuration des zones de source et de drain
US8853035B2 (en) * 2011-10-05 2014-10-07 International Business Machines Corporation Tucked active region without dummy poly for performance boost and variation reduction
US8823065B2 (en) 2012-11-08 2014-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure of semiconductor device
US9105490B2 (en) 2012-09-27 2015-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure of semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI844516B (zh) * 2017-08-07 2024-06-11 日商索尼半導體解決方案公司 電性連接構造、半導體裝置及電子機器
TWI761466B (zh) * 2017-11-29 2022-04-21 國立大學法人東北大學 含鈷合金之半導體裝置及其製造方法
US11380619B2 (en) 2017-11-29 2022-07-05 Tohoku University Semiconductor devices including cobalt alloys and fabrication methods thereof
TWI683369B (zh) * 2018-04-30 2020-01-21 台灣積體電路製造股份有限公司 半導體元件及其製造方法
US11309417B2 (en) 2018-04-30 2022-04-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US11830947B2 (en) 2018-04-30 2023-11-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device and a semiconductor device

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