TW201351588A - 電路連接材料、及使用其之半導體裝置之製造方法 - Google Patents

電路連接材料、及使用其之半導體裝置之製造方法 Download PDF

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Publication number
TW201351588A
TW201351588A TW102108568A TW102108568A TW201351588A TW 201351588 A TW201351588 A TW 201351588A TW 102108568 A TW102108568 A TW 102108568A TW 102108568 A TW102108568 A TW 102108568A TW 201351588 A TW201351588 A TW 201351588A
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Taiwan
Prior art keywords
adhesive layer
solder
electrode
thickness
melt viscosity
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TW102108568A
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English (en)
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TWI552294B (zh
Inventor
Hironobu Moriyama
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Dexerials Corp
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Publication of TW201351588A publication Critical patent/TW201351588A/zh
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Publication of TWI552294B publication Critical patent/TWI552294B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/10—Adhesives in the form of films or foils without carriers
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Abstract

本發明提供一種可獲得與對向之電極之良好之接合的電路連接材料、及使用其之半導體裝置之製造方法。本發明係使用積層有接著於半導體晶片(10)側的第1接著劑層(21)、與具有高於第1接著劑層(21)之最低熔融黏度到達溫度之最低熔融黏度到達溫度的第2接著劑層(22)之電路連接材料(20)。本發明藉由使將貼附有該電路連接材料(20)之半導體晶片(10)搭載於電路基板(30)時，第1接著劑層(21)之厚度Hb1為滿足下述式(1)之範圍，而可獲得與對向之電極之良好之接合。

Description

電路連接材料、及使用其之半導體裝置之製造方法
本發明係關於一種用於半導體晶片之搭載的電路連接材料、及使用其之半導體裝置之製造方法。本申請案係基於2012年3月30日於日本提出申請之日本專利申請案編號之日本特願2012-079542且主張其優先權，並將該申請案藉由參照而引用於本申請案中。
近年來，於向基板搭載半導體晶片之方法中，為了縮短步驟，而一直研究使用「預先供給型底部填充膜」，其於將半導體IC(Integrated Circuit，積體電路)電極與基板電極金屬接合或壓接接合之前，將底部填充膜貼附於基板上。
該使用預先供給型底部填充膜之搭載方法例如可以下述之方式進行(例如，參照專利文獻1)。
步驟A：將底部填充膜貼附於晶圓，進行切割而獲得半導體晶片。
步驟B：於基板上進行半導體晶片之位置對準。
步驟C：利用高溫、高壓而壓接半導體晶片與基板，藉由焊錫凸塊(solder bumping)之金屬結合而確保導通，且藉由使底部填充膜硬化而將半導體晶片與基板接著。
關於此種搭載方法，例如於專利文獻2中提出使用具有助焊 效果之接著劑，藉此提高焊料之潤濕性，改善接合狀態。
然而，使用先前之底部填充膜時，焊料亦潤濕擴展至附有焊料之電極側，無法獲得與對向電極之良好之接合。
[專利文獻1]日本特開2005-28734號公報
[專利文獻2]日本特開2001-93940號公報
本發明係鑒於上述先前之實際情況而提出者，本發明提供一種可獲得與對向之電極之良好之接合的電路連接材料、及使用其之半導體裝置之製造方法。
為解決上述課題，本發明係一種電路連接材料，其係用以將形成有附有焊料之電極的半導體晶片、與形成有與上述附有焊料之電極相對向之對向電極的電路基板接合者，其係將接著於上述半導體晶片側的第1接著劑層、與具有高於該第1接著劑層之最低熔融黏度到達溫度之最低熔融黏度到達溫度的第2接著劑層積層，當於低於上述第1接著劑層之最低熔融黏度到達溫度之溫度，將貼附有該電路連接材料之上述半導體晶片搭載於上述電路基板時，上述第1接著劑層之厚度Hb1為滿足下述式(1)之範圍。
0.5×He1≦Hb1≦He1+0.75×Hs (1)
上述式(1)中，He1為上述附有焊料之電極之電極厚度， Hs為上述附有焊料之電極之焊料厚度。
又，本發明係一種半導體裝置之製造方法，其係將形成有附 有焊料之電極的半導體晶片、與形成有與上述附有焊料之電極相對向之對向電極的電路基板，經由電路連接材料加以接合，該電路連接材料由接著於上述半導體晶片側的第1接著劑層、與具有高於該第1接著劑層之最低熔融黏度到達溫度之最低熔融黏度到達溫度的第2接著劑層所積層而成，其具有如下步驟：搭載步驟，於低於上述第1接著劑層之最低熔融黏度到達溫度之溫度，將貼附有上述電路連接材料之上述半導體晶片搭載於上述電路基板，使上述第1接著劑層之厚度Hb1為滿足下述式(1)之範圍；及熱壓接步驟，於上述附有焊料之電極的焊料之熔點以上之溫度，對上述半導體晶片與上述電路基板進行熱壓接。
0.5×He1≦Hb1≦He1+0.75×Hs (1)
上述式(1)中，He1為上述附有焊料之電極之電極厚度，Hs為上述附有焊料之電極之焊料厚度。
又，本發明係一種半導體裝置之製造方法，其係將具有形成有附有焊料之電極的第1面、與於第1面之相反側形成有與上述附有焊料之電極相對向之對向電極的第2面之複數片晶片基板，經由電路連接材料加以積層，該電路連接材料由接著於上述第1面側的第1接著劑層、與具有高於該第1接著劑層之最低熔融黏度到達溫度之最低熔融黏度到達溫度的第2接著劑層所積層而成，其具有如下步驟：搭載步驟，於低於上述第1接著劑層之最低熔融黏度到達溫度之溫度，將貼附有上述電路連接材料之第1晶片基板之第1面搭載於第2晶片基板之第2面，使上述第1接著劑層 之厚度Hb1為滿足下述式(1)之範圍；及熱壓接步驟，於上述附有焊料之電極的焊料之熔點以上之溫度，對上述第1晶片基板之第1面與上述第2晶片基板之第2面進行熱壓接。
0.5×He1≦Hb1≦He1+0.75×Hs (1)
上述式(1)中，He1為上述附有焊料之電極之電極厚度，Hs為上述附有焊料之電極之焊料厚度。
根據本發明，由於係使用第1接著劑層之最低熔融黏度到達溫度低於第2接著劑層之最低熔融黏度到達溫度，且搭載時第1接著劑層與第2接著劑層之界面位於規定位置之電路連接材料，故而可防止焊料潤濕擴展至附有焊料之電極側，並且使焊料向相對向之電極側潤濕擴展，獲得與對向之電極之良好之接合。
1‧‧‧晶圓
2‧‧‧底部填充膜
3‧‧‧治具
4‧‧‧刀片
10‧‧‧半導體晶片
11‧‧‧半導體
12‧‧‧電極
13‧‧‧焊料
20‧‧‧電路連接材料
21‧‧‧第1接著劑層
22‧‧‧第2接著劑層
30‧‧‧電路基板
31‧‧‧基材
32‧‧‧對向電極
Ha1‧‧‧搭載前之第1接著劑層之厚度
Ha2‧‧‧搭載前之第2接著劑層之厚度
Hb1‧‧‧搭載後之第1接著劑層之厚度
Hb2‧‧‧搭載後之第2接著劑層的厚度
He1‧‧‧附有焊料之電極之電極厚度
He2‧‧‧對向電極之電極厚度
Hs‧‧‧附有焊料之電極之焊料厚度
S1‧‧‧貼附步驟
S2‧‧‧切割步驟
S3‧‧‧半導體晶片搭載步驟
S4‧‧‧熱壓接步驟
圖1係示意性地表示搭載前之半導體晶片之剖面圖。
圖2係示意性地表示搭載後之半導體晶片之剖面圖。
圖3係表示第1接著劑層及第2接著劑層之熔融黏度之一例的圖。
圖4係表示圖3所示之熔融黏度下之熔融黏度比(第1層/第2層)之圖。
圖5係表示本實施形態之半導體裝置之製造方法之流程圖。
圖6係示意性地表示於晶圓上貼附底部填充膜之步驟之立體圖。
圖7係示意性地表示切割晶圓之步驟之立體圖。
圖8係示意性地表示拾取半導體晶片之步驟之立體圖。
圖9係示意性地表示將半導體晶片搭載於基板之步驟之立體圖。
圖10係焊料之潤濕擴展良好之狀態之剖面的示意圖。
圖11係焊料之潤濕擴展不充分之狀態之剖面的示意圖。
以下，以下述順序對本發明之實施形態詳細地進行說明。
1.電路連接材料
2.半導體裝置之製造方法
3.實施例
<1.電路連接材料>
圖1係示意性地表示搭載前之半導體晶片之剖面圖，圖2係示意性地表示搭載後之半導體晶片之剖面圖。
如圖1、2所示，本實施形態之電路連接材料20係用以將形成有附有焊料之電極的半導體晶片10、與形成有與附有焊料之電極相對向之對向電極的電路基板30接合。
半導體晶片10係於矽等半導體11表面形成積體電路，且具有稱為凸塊(bump)之連接用之附有焊料之電極。附有焊料之電極係於由銅等構成之電極12上接合有焊料13者，具有電極12之厚度He1與焊料13之厚度Hs之合計厚度(He1+Hs)。
作為焊料，可使用Sn-37Pb共晶焊料(熔點183℃)、Sn-Bi焊料(熔點139℃)、Sn-3.5Ag(熔點221℃)、Sn-3.0Ag-0.5Cu(熔點217℃)、Sn-5.0Sb(熔點240℃)等。
電路基板30係於例如剛性基板、可撓性基板等基材31形成 有電路。又，於搭載半導體晶片10之安裝部，在與半導體晶片10之附有焊料之電極相對向之位置形成有具有規定厚度He2的對向電極32。
電路連接材料20具有雙層結構，該雙層結構係積層有接著 於半導體晶片10側的第1接著劑層21、與具有高於第1接著劑層21之最低熔融黏度到達溫度T1之最低熔融黏度到達溫度T2的第2接著劑層22。
此處，第1接著劑層21及第2接著劑層22之最低熔融黏度 到達溫度T1、T2(T1<T2)高於常溫，且低於焊料熔點(25℃<T1、T2<焊料熔點)。
又，電路連接材料20係如下所述，即當如圖2所示般於低 於第1接著劑層21之最低熔融黏度到達溫度T1之溫度，將貼附有電路連接材料20之半導體晶片10搭載於電路基板30時，第1接著劑層21之厚度Hb1為滿足下述式(1)之範圍。
0.5×He1≦Hb1≦He1+0.75×Hs (1)
式(1)中，He1為附有焊料之電極之電極厚度，Hs為附有 焊料之電極之焊料厚度。
此種電路連接材料20藉由使第1接著劑層21之最低熔融黏 度到達溫度T1低於第2接著劑層22之最低熔融黏度到達溫度T2，且第1接著劑層21與第2接著劑層22之界面Hb1為滿足式(1)之範圍，可防止焊料潤濕擴展至附有焊料之電極側，並且使焊料潤濕擴展至對向電極32側，從而獲得與對向電極32之良好之接合。
又，如圖2所示般，更佳為將半導體晶片10搭載於電路基 板時，第1接著劑層21之厚度Hb1為滿足下述式(2)之範圍。
0.75×He1≦Hb1≦He1+0.75×Hs (2)
式(2)中，He1為附有焊料之電極之電極厚度，Hs為附有 焊料之電極之焊料厚度。
藉由使第1接著劑層21與第2接著劑層22之界面Hb1為滿 足式(2)之範圍，可更有效地防止焊料潤濕擴展至附有焊料之電極側，可使焊料充分地潤濕擴展至對向電極32側。
搭載半導體晶片10時第1接著劑層21與第2接著劑層22 之界面的位置係根據於搭載溫度第1接著劑層21及第2接著劑層22之熔融黏度的不同而變化，因此可根據於搭載溫度之熔融黏度而決定搭載前之第1接著劑層21之厚度Ha1。
具體而言，於在將半導體晶片10搭載於電路基板30之溫 度，第1接著劑層21之熔融黏度η 1與第2接著劑層22之熔融黏度η 2之比(η 1/η 2)為0.8以上的情形時，搭載前之第1接著劑層21之厚度Ha1及第2接著劑層22之厚度Ha2較佳為滿足下述式(3-1)及式(3-2)的範圍。
0.5×He1≦Ha1≦He1+0.75×Hs (3-1)
He1+He2≦Ha1+Ha2 (3-2)
式(3-1)及式(3-2)中，He1為附有焊料之電極之電極厚度，Hs為附有焊料之電極之焊料厚度，He2為對向電極之電極厚度。
於搭載溫度之熔融黏度比(η 1/η 2)為0.8以上之情形時， 搭載前之第1接著劑層21之厚度Ha1與搭載後之第1接著劑層21之厚度Hb1間的變化較小。因此，可藉由使搭載前之第1接著劑層21之厚度Ha1及第2接著劑層22之厚度Ha2為滿足式(3-1)及式(3-2)的範圍，而使搭載後之界面Hb1為滿足式(1)之範圍內。
又，於在將半導體晶片10搭載於電路基板30之溫度，第1 接著劑層21之熔融黏度η 1與第2接著劑層22之熔融黏度η 2之比(η 1/η 2)為0.6以下的情形時，搭載前之第1接著劑層21之厚度Ha1及第2接著劑層22之厚度Ha2較佳為滿足下述式(4-1)至式(4-3)的範圍。
0.5×He1≦Ha1 (4-1)
0.25×Hs+He2≦Ha2≦0.5×He1+Hs+He2 (4-2)
He1+He2≦Ha1+Ha2 (4-3)
式(4-1)至式(4-3)中，He1為附有焊料之電極之電極厚度，Hs為附有焊料之電極之焊料厚度，He2為對向電極之電極厚度。
於搭載溫度之熔融黏度比(η 1/η 2)為0.6以下之情形時，搭載前之第2接著劑層22之厚度Ha2與搭載後之第2接著劑層22之厚度Hb2間的變化較小。因此，可藉由使搭載前之第1接著劑層21之厚度Ha1及第2接著劑層22之厚度Ha2為滿足式(4-1)至式(4-3)的範圍，而使搭載後之界面Hb1為滿足式(1)之範圍內。
圖3係表示第1接著劑層及第2接著劑層之熔融黏度之一例的圖。又，圖4係表示圖3所示之熔融黏度下之熔融黏度比(第1層/第2層)之圖。
第1接著劑層21及第2接著劑層22之熔融黏度較佳為100 Pa．s以上50000 Pa．s以下。又，第1接著劑層21之熔融黏度與第2接著劑層21之熔融黏度之比的最大值較佳為10以上。藉此，熱壓接時焊料之潤濕擴展提昇，而可獲得更為良好之接合狀態。
繼而，對電路連接材料20之第1接著劑層21及第2接著劑 層22進行說明。第1接著劑層21及第2接著劑層22均含有膜形成樹脂、環氧樹脂、環氧硬化劑。
膜形成樹脂相當於平均分子量為10000以上之高分子量樹 脂，就膜形成性之觀點而言，較佳為平均分子量為10000~80000左右。作為膜形成樹脂，可使用苯氧基樹脂、環氧樹脂、改質環氧樹脂、胺酯樹脂等各種樹脂。該等膜形成樹脂可單獨使用1種，亦可組合2種以上而使用。 該等中，就膜形成狀態、連接可靠性等觀點而言，本實施形態中可較佳地使用苯氧基樹脂。
作為環氧樹脂，例如可列舉：二環戊二烯型環氧樹脂、縮水 甘油醚型環氧樹脂、縮水甘油胺型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、螺環型環氧樹脂、萘型環氧樹脂、聯苯型環氧樹脂、萜烯型環氧樹脂、四溴雙酚A型環氧樹脂、甲酚酚醛清漆型環氧樹脂、苯酚酚醛清漆型環氧樹脂、α-萘酚酚醛清漆型環氧樹脂、溴化苯酚酚醛清漆型環氧樹脂等。該等環氧樹脂可單獨使用1種，亦可組合2種以上而使用。該等中，就高接著性、耐熱性之方面而言，本實施形態中較佳為使用二環戊二烯型環氧樹脂。
環氧硬化劑並無特別限定，但較佳為使用具有去除焊料表面 之氧化膜之助焊劑功能之酸酐。作為酸酐，例如可列舉：四丙烯基琥珀酸酐、十二烯基琥珀酸酐等脂肪族酸酐；六氫鄰苯二甲酸酐、甲基四氫鄰苯二甲酸酐等脂環式酸酐；鄰苯二甲酸酐、苯偏三酸酐(trimellitic anhydride)、焦蜜石酸二酐(pyromellitic dianhydride)等芳香族酸酐等。該等環氧硬化劑可單獨使用1種，亦可組合2種以上而使用。該等環氧硬化劑中，就該等中焊料連接性之方面而言，較佳為使用脂肪族酸酐。
環氧硬化劑之使用量係調配硬化有效量，有若過少，則焊料 潤濕變得不充分，若過多，則保存穩定性下降的傾向。使用脂肪族酸酐作為環氧硬化劑之情形時，相對於環氧樹脂100重量份較佳為15質量份以上90質量份以下，更佳為40質量份以上70質量份以下。
又，亦可視需要而含有硬化促進劑。作為硬化促進劑之具體 例，可列舉：1,8-二氮雜雙環(5,4,0)十一烯-7鹽(DBU鹽)，2-(二甲基胺基甲基)苯酚等三級胺類，2-甲基咪唑、2-乙基咪唑、2-乙基-4-甲基咪唑等咪唑類，三苯基膦等膦類，辛酸亞錫等金屬化合物等。又，硬化促進劑可視需要相對於環氧樹脂100重量份而調配0.1~5.0質量份。
又，第1接著劑層21及第2接著劑層22均以除了膜形成樹 脂、環氧樹脂、環氧硬化劑外進而含有丙烯酸系樹脂、自由基聚合起始劑為佳。藉此，即便進行如搭載溫度與壓接時之最高到達溫度之差為70℃以上的急速加熱之情形時，亦可防止產生孔隙。
作為丙烯酸系樹脂，可使用單官能(甲基)丙烯酸酯、二官能 以上之(甲基)丙烯酸酯。作為單官能(甲基)丙烯酸酯，可列舉：(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸異丙酯、(甲 基)丙烯酸正丁酯等。作為二官能以上之(甲基)丙烯酸酯，可列舉：雙酚F-EO(ethylene oxide，環氧乙烷)改質二(甲基)丙烯酸酯、雙酚A-EO改質二(甲基)丙烯酸酯、三羥甲基丙烷PO(propylene oxide，環氧丙烷)改質(甲基)丙烯酸酯、多官能(甲基)丙烯酸胺酯等。該等丙烯酸系樹脂可單獨使用，亦可組合2種以上而使用。該等中，本實施形態中可較佳地使用二官能(甲基)丙烯酸酯。
作為自由基聚合起始劑，可較佳地使用有機過氧化物等自由 基產生劑。作為有機過氧化物，例如可列舉：過氧酯、過氧縮酮、過氧化氫、二烷基過氧化物、二醯基過氧化物、過氧化二碳酸酯等。該等有機過氧化物可單獨使用，亦可組合2種以上而使用。該等中，本實施形態中可較佳地使用過氧酯。
又，較佳為含有無機填料作為其他添加組成物。藉由含有無 機填料，可調整壓接時樹脂層之流動性，提高粒子捕捉率。作為無機填料，可使用二氧化矽、滑石、氧化鈦、碳酸鈣、氧化鎂等。
進而，亦可視需要而添加環氧系、胺基系、巰基-硫化物系、 脲基系等矽烷偶合劑。
繼而，對將上述電路連接材料形成為膜狀之預先供給型底部 填充膜之製造方法進行說明。本實施形態之電路連接材料之製造方法係將第1接著劑層21與第2接著劑層22貼附者。
具體而言，具有如下步驟：製作第1接著劑層21之步驟； 製作第2接著劑層22之步驟；及將第1接著劑層21與第2接著劑層22貼附之步驟。
於製作第1接著劑層21之步驟中，使含有膜形成樹脂、環 氧樹脂、環氧硬化劑之接著劑組成物溶解於溶劑。作為溶劑，可使用甲苯、乙酸乙酯等、或該等之混合溶劑。製備第1接著劑層21之樹脂組成物後，使用棒式塗佈機、塗佈裝置等塗佈於脫模基材上。
脫模基材例如由將聚矽氧等脫模劑塗佈於PET(Poly Ethylene Terephthalate，聚對苯二甲酸乙二酯)、OPP(Oriented Polypropylene，延伸聚丙烯)、PMP(Poly-4-methylpentene-1，聚-4-甲基戊烯)、PTFE(Polytetrafluoroethylene，聚四氟乙烯)等之積層結構所構成，可防止組成物乾燥，並且維持組成物之形狀。
繼而，利用熱烘箱、加熱乾燥裝置等而將塗佈於脫模基材上 之樹脂組成物乾燥。藉此，可獲得厚度5~50μm左右之第1接著劑層21。
又，製作第2接著劑層22之步驟與第1接著劑層21相同， 使含有膜形成樹脂、環氧樹脂、環氧硬化劑之接著劑組成物溶解於溶劑。 然後，於製備第2接著劑層22之樹脂組成物後，將其塗佈於脫模基材上，使溶劑揮發，藉此可獲得第2接著劑層22。
於其次之將第1接著劑層21與第2接著劑層22貼附之步驟 中，將第1接著劑層21與第2接著劑層22貼附而積層，從而製作雙層結構之預先供給型底部填充膜。
藉由如此般將第1接著劑層21與第2接著劑層22貼附，可 獲得雙層結構之預先供給型底部填充膜。
再者，於上述實施形態中，係將第1接著劑層21與第2接 著劑層22貼附而製造電路連接材料，但並不限定於此，亦可於形成一接著 劑層後，塗佈另一接著劑層之樹脂組成物且使其乾燥而進行製造。
<2.半導體裝置之製造方法>
繼而，對使用上述預先供給型底部填充膜之半導體裝置之製造方法進行說明。
圖5係表示本實施形態之半導體裝置之製造方法之流程圖。如圖5所示，本實施形態之半導體裝置之製造方法具有：底部填充膜貼附步驟S1、切割步驟S2、半導體晶片搭載步驟S3、熱壓接步驟S4。
圖6係示意性地表示於晶圓上貼附底部填充膜之步驟之立體圖。如圖6所示，於底部填充膜貼附步驟S1中，利用具備具有大於晶圓1之直徑的直徑之環狀或框狀之框架的治具3將晶圓1固定，於晶圓1上貼附底部填充膜2。底部填充膜2係發揮作為切割保護膠帶(dicing tape)之功能，於切割晶圓1時保護、固定晶圓1，於拾取時保持晶圓1。再者，於晶圓1中製作嵌入有大量IC(Integrated Circuit，積體電路)，且於晶圓1之接著面，如圖1所示般，於由劃線所劃分之各半導體晶片10分別設置有附有焊料之電極。
圖7係示意性地表示切割晶圓之步驟之立體圖。如圖7所示，於切割步驟S2中，沿劃線按壓刀片4而切削晶圓1，分割成單個之半導體晶片。
圖8係示意性地表示拾取半導體晶片之步驟之立體圖。如圖8所示，各附有底部填充膜之半導體晶片10係於由底部填充膜保持之狀態下拾取。
圖9係示意性地表示將半導體晶片搭載於基板之步驟之立 體圖。電路基板30例如為剛性基板或可撓性基板，於搭載半導體晶片10之安裝部，形成有可與半導體晶片10之附有焊料之電極導通連接之電極。
如圖9所示，於半導體晶片搭載步驟S3中，將附有底部填 充膜之半導體晶片10與電路基板30經由底部填充膜而進行配置。又，以附有焊料之電極與對向電極32相對向之方式將附有底部填充膜之半導體晶片10對準位置而配置。
然後，使用加熱接合機，於底部填充膜產生流動性但不會正式硬化之程度的規定之溫度、壓力、時間之條件下加熱按壓而進行搭載。搭載時之溫度條件較佳為60℃以上150℃以下，更佳為80℃以上120℃以下。又，壓力條件較佳為10 N以下，更佳為8 N以下。又，時間條件較佳為1秒以上120秒以下，更佳為5秒以上60秒以下。藉此可形成附有焊料之電極未熔融而與電路基板30側之電極接觸的狀態，且可形成底部填充膜未完全硬化之狀態。又，由於係以較低之溫度進行固定，故而可抑制孔隙之產生，降低對半導體晶片10之損害。
於其次之熱壓接步驟S4中，藉由較高之溫度使附有焊料之電極之焊料熔融而形成金屬結合，並且使底部填充膜完全硬化。熱壓接時之溫度條件亦取決於焊料之種類，但較佳為200℃以上280℃以下，更佳為220℃以上260℃以下。又，時間條件較佳為5秒以上500秒以下，更佳為10秒以上100秒以下。藉此，可使附有焊料之電極與基板電極金屬結合，並且使底部填充膜完全硬化，從而使半導體晶片10之電極與電路基板30之電極電性連接且機械連接。
如上述般，本實施形態之半導體裝置之製造方法中，由於係 使用第1接著劑層21之最低熔融黏度到達溫度低於第2接著劑層22之最低熔融黏度到達溫度，且搭載半導體晶片10時其界面位於規定位置之電路連接材料，故而可防止焊料潤濕擴展至附有焊料之電極側，並且使焊料潤濕擴展至相對向之電極側，獲得與對向之電極之良好之接合。
再者，於上述實施形態中，係使底部填充膜發揮作為切割保 護膠帶之功能，但並不限定於此，亦可使用另外之切割保護膠帶，於切割後使用底部填充膜進行倒裝晶片安裝。
[其他實施形態]
又，本技術亦可應用於TSV(Through Silicon Via，矽穿孔)技術，該TSV技術係將金屬填充於設置於半導體晶片之小孔，藉此將堆疊成夾層狀之複數片晶片基板電性連接。
即，本技術亦可應用於將具有形成有附有焊料之電極的第1 面、與於第1面之相反側形成有與附有焊料之電極相對向之對向電極的第2面之複數片晶片基板積層之半導體裝置之製造方法。
此時，係使電路連接材料之第1接著劑層接著於第1面側， 於低於第1接著劑層之最低熔融黏度到達溫度之溫度，將貼附有電路連接材料之第1晶片基板之第1面搭載於第2晶片基板之第2面，使第1接著劑層之厚度Hb1為滿足下述式(1)之範圍。
0.5×He1≦Hb1≦He1+0.75×Hs (1)
式(1)中，He1為附有焊料之電極之電極厚度，Hs為附有焊料之電極之焊料厚度。
其後，於上述附有焊料之電極的焊料之熔點以上之溫度，對 第1晶片基板之第1面與上述第2晶片基板之第2面進行熱壓接，藉此可獲得積層有複數片晶片基板之半導體裝置。
[實施例]
<3.實施例>
以下，對本發明之實施例進行說明。於本實施例中，製作厚度、最低熔融黏度到達溫度、於搭載溫度之熔融黏度等不同之NCF(Non Conductive Film，非導電性膜)-A~NCF-E，使用其而製作積層有第1接著劑層與第2接著劑層之雙層結構的電路連接材料。然後，使用電路連接材料將具有附有焊料之電極的IC晶片、及具有與其相對向之電極的IC基板連接，而製作構裝體。對各構裝體進行溫度循環(TCT)試驗，並進行潤濕性之評價、導通電阻之評價、及孔隙之評價。再者，本發明並不限定於該等實施例。
最低熔融黏度到達溫度及於搭載溫度之熔融黏度之測定、溫度循環試驗、潤濕性之評價、導通電阻之評價、及孔隙之評價係以下述方式進行。
[最低熔融黏度到達溫度、及於搭載溫度之熔融黏度之測定]
對於各NCF，使用流變計(TA公司製造之ARES)，於5℃/min、1 Hz之條件測定樣品之最低熔融黏度到達溫度、及搭載溫度(100℃)下之熔融黏度。
[溫度循環(TCT)試驗]
對於各構裝體，進行-55℃(30min)125℃(30 min)之溫度循環2000次。
[潤濕性之評價]
切斷各構裝體，對剖面進行研磨，如圖10及圖11所示之剖面圖般，對附有焊料之電極及與其相對向之電極之間的焊料之潤濕擴展狀態進行SEM(Scanning Electron Microscope，掃描式電子顯微鏡)觀察。將如圖10所示般焊料向對向之電極之潤濕擴展距離為25%以上者評價為◎，將10%以上且未達25%者評價為○，且將如圖11所示般未達10%者評價為×。
[導通電阻之評價]
對各構裝體進行溫度循環(TCT)試驗後，使用數位萬用表對280個接腳(pin)分別測定導通電阻值。將無一處產生斷路(OPEN)者評價為◎，將有一處以上產生斷路者評價為×。
[孔隙之評價]
對各構裝體使用SAT(Scanning Acoustic Tomograph，超音波影像裝置)進行觀察，將未產生孔隙者評價為◎，將孔隙為IC晶片面積之10%以下者評價為○，將孔隙超過IC晶片面積之10%者評價為×。
<NCF之製作>
(NCF-A)
調配苯氧基樹脂(品名：PKHH，Union Carbide公司製造)13.7質量份、環氧樹脂(品名：HP7200H，大日本油墨化學公司製造)13.7質量份、酸酐(品名：MH-700，新日本理化公司製造)8.1質量份、咪唑(品名：2MZ-A，四國化成工業公司製造)0.07質量份、丙烯酸系樹脂(品名：DCP，新中村化學公司製造)13.7質量份、有機過氧化物(品名：PERBUTYL Z，日本油脂公司製造)0.7質量份、填料(品名：SO-E5，Admatechs公司製造)44.6質量份、及填料(品名：AEROSIL RY200，日本Aerosil公司製造)5.5質量 份，而製備NCF-A之樹脂組成物。使用棒式塗佈機，將其塗佈於經脫模處理之PET(Polyethylene terephthalate)，並利用80℃之烘箱乾燥3分鐘，而製作規定厚度之NCF-A(覆蓋脫模PET(25μm)/NCF/基底脫模PET(50μm))。如表1所示，NCF-A之最低熔融黏度到達溫度為118℃。又，於搭載溫度之熔融黏度為1500 Pa．s。
(NCF-B)
調配苯氧基樹脂(品名：PKHH，Union Carbide公司製造)13.7質量份、環氧樹脂(品名：HP7200H，大日本油墨化學公司製造)22.7質量份、酸酐(品名：MH-700，新日本理化公司製造)13.4質量份、咪唑(品名：2MZ-A．四國化成工業公司製造)0.11質量份、填料(品名：SO-E2．Admatechs公司製造)44.6質量份、及填料(品名：AEROSIL RY200，日本Aerosil公司製造)5.5質量份，而製備NCF-B之樹脂組成物。使用棒式塗佈機，將其塗佈於經脫模處理之PET(Polyethylene terephthalate)，並利用80℃之烘箱乾燥3分鐘，而製作規定厚度之NCF-B(覆蓋脫模PET(25μm)/NCF/基底脫模PET(50μm))。如表1所示，NCF-B之最低熔融黏度到達溫度為135℃。又，於搭載溫度之熔融黏度為1450 Pa．s。
(NCF-C)
調配苯氧基樹脂(品名：PKHH，Union Carbide公司製造)13.7質量份、環氧樹脂(品名：HP7200H，大日本油墨化學公司製造)20.6質量份、酸酐(品名：MH-700，新日本理化公司製造)12.1質量份、咪唑(品名：2MZ-A，四國化成工業公司製造)0.10質量份、丙烯酸系樹脂(品名：DCP，新中村化學公司製造)3.3質量份、有機過氧化物(品名：PERBUTYL Z，日本油 脂公司製造)0.2質量份、填料(品名：SO-E2，Admatechs公司製造)44.6質量份、及填料(品名：AEROSIL RY200，日本Aerosil公司製造)5.5質量份，而製備NCF-C之樹脂組成物。使用棒式塗佈機，將其塗佈於經脫模處理之PET(Polyethylene terephthalate)，並利用80℃之烘箱乾燥3分鐘，而製作規定厚度之NCF-C(覆蓋脫模PET(25μm)/NCF/基底脫模PET(50μm))。如表1所示，NCF-C之最低熔融黏度到達溫度為130℃。又，於搭載溫度之熔融黏度為1460 Pa．s。
(NCF-D)
調配苯氧基樹脂(品名：PKHH，Union Carbide公司製造)13.7質量份、環氧樹脂(品名：HP7200H，大日本油墨化學公司製造)15.1質量份、酸酐(品名：MH-700，新日本理化公司製造)8.9質量份、咪唑(品名：2MZ-A，四國化成工業公司製造)0.08質量份、丙烯酸系樹脂(品名：DCP，新中村化學公司製造)11.6質量份、有機過氧化物(品名：PERBUTYLZ，日本油脂公司製造)0.6質量份、填料(品名：SO-E2，Admatechs公司製造)44.6質量份、及填料(品名：AEROSIL RY200，日本Aerosil公司製造)5.5質量份，而製備NCF-D之樹脂組成物。使用棒式塗佈機，將其塗佈於經脫模處理之PET(Polyethylene terephthalate)，並利用80℃之烘箱乾燥3分鐘，而製作規定厚度之NCF-D(覆蓋脫模PET(25μm)/NCF/基底脫模PET(50μm))。如表1所示，NCF-D之最低熔融黏度到達溫度為120℃。又，於搭載溫度之熔融黏度為1480 Pa．s。
(NCF-E)
調配苯氧基樹脂(品名：PKHH，Union Carbide公司製造)13.7質量份、 環氧樹脂(品名：HP7200H，大日本油墨化學公司製造)22.7質量份、酸酐(品名：MH-700，新日本理化公司製造)13.4質量份、咪唑(品名：2MZ-A，四國化成工業公司製造)0.11質量份、填料(品名：SO-E2，Admatechs公司製造)41.8質量份、及填料(品名：AEROSIL RY200，日本Aerosil公司製造)8.2質量份，而製備NCF-E之樹脂組成物。使用棒式塗佈機，將其塗佈於經脫模處理之PET(Polyethylene terephthalate)，並利用80℃之烘箱乾燥3分鐘，而製作規定厚度之NCF-E(覆蓋脫模PET(25μm)/NCF/基底脫模PET(50μm))。如表1所示，NCF-E之最低熔融黏度到達溫度為135℃。又，搭載溫度下之熔融黏度為3200 Pa．s。
[實施例1]
(電路連接材料之製作)
使用NCF-A作為第1接著劑層，使用NCF-B作為第2接著劑層，使用輥貼合機進行層疊，而製作NCF-A(Ha1=25μm)/NCF-B(Ha2=25μm)之雙層構成之底部填充膜。
(構裝體之製作)
利用壓製機，於50℃-0.5 MPa之條件，將底部填充膜之第1接著劑層側貼附於晶圓上，進行切割而獲得具有附有焊料之電極之IC晶片。
IC晶片係尺寸為7 mm□，厚度為200μm，且具有於由Cu構成之電極之頂端形成有焊料(Sn-3.5Ag，熔點221℃)之周邊配置(peripheral)之凸塊(30μm、間距85μm、280個接腳)者。
又，與其相對向之IC基板係與IC晶片同樣，尺寸為7 mm□，厚度為200μm，且具有形成有由Cu構成之電極之周邊配置之凸塊(30μm、間距85μm、280個接腳)者。
於圖1所示之剖面圖中，相當於IC晶片之半導體晶片10之電極12之厚度He1為20μm，焊料13之厚度Hs為16μm。又，相當於IC基板之電路基板30之電極32之厚度He2為20μm。又，第1接著劑層21之厚度Ha1為25μm，第2接著劑層22之厚度Ha2為25μm。
即，實施例1中之厚度基準值如下：0.5×He1=10、He1+0.75×Hs=32、0.25×Hs+He2=24、0.5×He1+Hs+He2=46。據此，搭載時第1接著劑層之厚度Hb1為10μm以上32μm以下之範圍。
繼而，如圖2所示，於半導體晶片10之焊料13與電路基板30之電極32接觸之狀態，使用倒裝晶片接合機，於100℃-2秒-10 N之條件，將IC晶片搭載於IC基板上。然後，測定搭載時第1接著劑層之厚度Hb1。
其後，使用倒裝晶片接合機，於150℃-5秒-10 N之條件進行加熱加壓，之後於230℃-20秒-30 N之條件對IC晶片與IC基板進行熱壓接。進而，於150℃-2小時之條件下進行固化而獲得構裝體。對於該構裝體， 以上述之方式進行潤濕性之評價、導通電阻之評價、及孔隙之評價。再者，使用倒裝晶片接合機時之溫度係樣品之實際測定溫度。
(評價結果)
將實施例1之評價結果示於表2。第1接著劑層之熔融黏度與第2接著劑層之熔融黏度之比的最大值為70。又，於搭載溫度(100℃)之第1接著劑層之熔融黏度η 1與第2接著劑層之熔融黏度η 2的比為1.03。又，搭載時第1接著劑層之厚度Hb1為25μm。又，構裝體之焊料潤濕性之評價為◎，導通電阻之評價為◎，且孔隙之評價為○。
[實施例2]
(電路連接材料之製作)
使用NCF-A作為第1接著劑層，使用NCF-C作為第2接著劑層，並使用輥貼合機進行層疊，而製作NCF-A(Ha1=25μm)/NCF-C(Ha2=25μm)之雙層構成之底部填充膜。
(構裝體之製作)
除底部填充膜以外，以與實施例1相同之方式製作構裝體。即，於圖1所示之剖面圖中，半導體晶片10之電極12之厚度He1為20μm，焊料13之厚度Hs為16μm。又，電路基板30之電極32之厚度He2為20μm。又，第1接著劑層21之厚度Ha1為25μm，第2接著劑層22之厚度Ha2為25μm。
(評價結果)
將實施例2之評價結果示於表2。第1接著劑層之熔融黏度與第2接著劑層之熔融黏度之比的最大值為12。又，於搭載溫度(100℃)之第1接著 劑層之熔融黏度η 1與第2接著劑層之熔融黏度η 2的比為1.03。又，搭載時第1接著劑層之厚度Hb1為25μm。又，構裝體之焊料潤濕性之評價為◎，導通電阻之評價為◎，且孔隙之評價為◎。
[實施例3]
(電路連接材料之製作)
使用NCF-A作為第1接著劑層，使用NCF-B作為第2接著劑層，並使用輥貼合機進行層疊，而製作NCF-A(Ha1=15μm)/NCF-B(Ha2=35μm)之雙層構成之底部填充膜。
(構裝體之製作)
除底部填充膜以外，以與實施例1相同之方式製作構裝體。即，於圖1所示之剖面圖中，半導體晶片10之電極12之厚度He1為20μm，焊料13之厚度Hs為16μm。又，電路基板30之電極32之厚度He2為20μm。又，第1接著劑層21之厚度Ha1為15μm，第2接著劑層22之厚度Ha2為35μm。
(評價結果)
將實施例3之評價結果示於表2。第1接著劑層之熔融黏度與第2接著劑層之熔融黏度之比的最大值為70。又，於搭載溫度(100℃)之第1接著劑層之熔融黏度η 1與第2接著劑層之熔融黏度η 2的比為1.03。又，搭載時第1接著劑層之厚度Hb1為15μm。又，構裝體之焊料潤濕性之評價為◎，導通電阻之評價為◎，且孔隙之評價為○。
[實施例4]
(電路連接材料之製作)
使用NCF-A作為第1接著劑層，使用NCF-B作為第2接著劑層，並使用輥貼合機進行層疊，而製作NCF-A(Ha1=30μm)/NCF-B(Ha2=20μm)之雙層構成之底部填充膜。
(構裝體之製作)
除底部填充膜以外，以與實施例1相同之方式製作構裝體。即，於圖1所示之剖面圖中，半導體晶片10之電極12之厚度He1為20μm，焊料13之厚度Hs為16μm。又，電路基板30之電極32之厚度He2為20μm。又，第1接著劑層21之厚度Ha1為30μm，第2接著劑層22之厚度Ha2為20μm。
(評價結果)
將實施例4之評價結果示於表2。第1接著劑層之熔融黏度與第2接著劑層之熔融黏度之比的最大值為70。又，於搭載溫度(100℃)之第1接著劑層之熔融黏度η 1與第2接著劑層之熔融黏度η 2的比為1.03。又，搭載時第1接著劑層之厚度Hb1為30μm。又，構裝體之焊料潤濕性之評價為◎，導通電阻之評價為◎，且孔隙之評價為○。
[實施例5]
(電路連接材料之製作)
使用NCF-A作為第1接著劑層，使用NCF-E作為第2接著劑層，並使用輥貼合機進行層疊，而製作NCF-A(Ha1=40μm)/NCF-E(Ha2=30μm)之雙層構成之底部填充膜。
(構裝體之製作)
除底部填充膜以外，以與實施例1相同之方式製作構裝體。即，於圖1 所示之剖面圖中，半導體晶片10之電極12之厚度He1為20μm，焊料13之厚度Hs為16μm。又，電路基板30之電極32之厚度He2為20μm。又，第1接著劑層21之厚度Ha1為40μm，第2接著劑層22之厚度Ha2為30μm。
(評價結果)
將實施例5之評價結果示於表2。第1接著劑層之熔融黏度與第2接著劑層之熔融黏度之比的最大值為70。又，於搭載溫度(100℃)之第1接著劑層之熔融黏度η 1與第2接著劑層之熔融黏度η 2的比為0.47。又，搭載時之第1接著劑層之厚度Hb1為15μm。又，構裝體之焊料潤濕性之評價為◎，導通電阻之評價為◎，且孔隙之評價為○。
[實施例6]
(電路連接材料之製作)
使用NCF-A作為第1接著劑層、使用NCF-D作為第2接著劑層，並使用輥貼合機進行層疊，而製作NCF-A(Ha1=25μm)/NCF-D(Ha2=25μm)之雙層構成之底部填充膜。
(構裝體之製作)
除底部填充膜以外，以與實施例1相同之方式製作構裝體。即，於圖1所示之剖面圖中，半導體晶片10之電極12之厚度He1為20μm，焊料13之厚度Hs為16μm。又，電路基板30之電極32之厚度He2為20μm。又，第1接著劑層21之厚度Ha1為25μm，第2接著劑層22之厚度Ha2為25μm。
(評價結果)
將實施例6之評價結果示於表2。第1接著劑層之熔融黏度與第2接著劑層之熔融黏度之比的最大值為4。又，於搭載溫度(100℃)之第1接著劑層之熔融黏度η 1與第2接著劑層之熔融黏度η 2的比為1.01。又，搭載時之第1接著劑層之厚度Hb1為25μm。又，構裝體之焊料潤濕性之評價為○，導通電阻之評價為◎，且孔隙之評價為◎。
[實施例7]
(電路連接材料之製作)
使用NCF-A作為第1接著劑層，使用NCF-B作為第2接著劑層，並使用輥貼合機進行層疊，而製作NCF-A(Ha1=10μm)/NCF-B(Ha2=40μm)之雙層構成之底部填充膜。
(構裝體之製作)
除底部填充膜以外，以與實施例1相同之方式製作構裝體。即，於圖1所示之剖面圖中，半導體晶片10之電極12之厚度He1為20μm，焊料13之厚度Hs為16μm。又，電路基板30之電極32之厚度He2為20μm。又，第1接著劑層21之厚度Ha1為10μm，第2接著劑層22之厚度Ha2為40μm。
(評價結果)
將實施例7之評價結果示於表2。第1接著劑層之熔融黏度與第2接著劑層之熔融黏度之比的最大值為70。又，於搭載溫度(100℃)之第1接著劑層之熔融黏度η 1與第2接著劑層之熔融黏度η 2的比為1.03。又，搭載時之第1接著劑層之厚度Hb1為10μm。又，構裝體之焊料潤濕性之評價為○，導通電阻之評價為◎，且孔隙之評價為○。
[比較例1]
(電路連接材料之製作)
使用NCF-B作為第1接著劑層，使用NCF-A作為第2接著劑層，並使用輥貼合機進行層疊，而製作NCF-B(Ha1=25μm)/NCF-A(Ha2=25μm)之雙層構成之底部填充膜。
(構裝體之製作)
除底部填充膜以外，以與實施例1相同之方式製作構裝體。即，於圖1所示之剖面圖中，半導體晶片10之電極12之厚度He1為20μm，焊料13之厚度Hs為16μm。又，電路基板30之電極32之厚度He2為20μm。又，第1接著劑層21之厚度Ha1為25μm，第2接著劑層22之厚度Ha2為25μm。
(評價結果)
將比較例1之評價結果示於表3。第1接著劑層之熔融黏度與第2接著劑層之熔融黏度之比的最大值為0.045。又，於搭載溫度(100℃)之第1接著劑層之熔融黏度η 1與第2接著劑層之熔融黏度η 2的比為0.97。又，搭載時之第1接著劑層之厚度Hb1為25μm。又，構裝體之焊料潤濕性之評價為×，導通電阻之評價為×，且孔隙之評價為○。
[比較例2]
(電路連接材料之製作)
使用NCF-A作為第1接著劑層，使用NCF-B作為第2接著劑層，並使用輥貼合機進行層疊，而製作NCF-A(Ha1=5μm)/NCF-B(Ha2=45μm)之雙層構成之底部填充膜。
(構裝體之製作)
除底部填充膜以外，以與實施例1相同之方式製作構裝體。即，於圖1所示之剖面圖中，半導體晶片10之電極12之厚度He1為20μm，焊料13之厚度Hs為16μm。又，電路基板30之電極32之厚度He2為20μm。又，第1接著劑層21之厚度Ha1為5μm，第2接著劑層22之厚度Ha2為45μm。
(評價結果)
將比較例2之評價結果示於表3。第1接著劑層之熔融黏度與第2接著劑層之熔融黏度之比的最大值為70。又，於搭載溫度(100℃)之第1接著劑層之熔融黏度η 1與第2接著劑層之熔融黏度η 2的比為1.03。又，搭載時之第1接著劑層之厚度Hb1為5μm。又，構裝體之焊料潤濕性之評價為×，導通電阻之評價為×，且孔隙之評價為○。
[比較例3]
(電路連接材料之製作)
使用NCF-A作為第1接著劑層，使用NCF-B作為第2接著劑層，並使用輥貼合機進行層疊，而製作NCF-A(Ha1=40μm)/NCF-B(Ha2=10μm)之雙層構成之底部填充膜。
(構裝體之製作)
除底部填充膜以外，以與實施例1相同之方式製作構裝體。即，於圖1所示之剖面圖中，半導體晶片10之電極12之厚度He1為20μm，焊料13之厚度Hs為16μm。又，電路基板30之電極32之厚度He2為20μm。又，第1接著劑層21之厚度Ha1為40μm，第2接著劑層22之厚度Ha2為10μm。
(評價結果)
將比較例3之評價結果示於表3。第1接著劑層之熔融黏度與第2接著劑層之熔融黏度之比的最大值為70。又，於搭載溫度(100℃)之第1接著劑層之熔融黏度η 1與第2接著劑層之熔融黏度η 2的比為1.03。又，搭載時之第1接著劑層之厚度Hb1為40μm。又，構裝體之焊料潤濕性之評價為×，導通電阻之評價為×，且孔隙之評價為○。
[比較例4]
(電路連接材料之製作)
使用NCF-A作為第1接著劑層，使用NCF-E作為第2接著劑層，並使用輥貼合機進行層疊，而製作NCF-A(Ha1=20μm)/NCF-E(Ha2=50μm)之雙層構成之底部填充膜。
(構裝體之製作)
除底部填充膜以外，以與實施例1相同之方式製作構裝體。即，於圖1所示之剖面圖中，半導體晶片10之電極12之厚度He1為20μm，焊料13之厚度Hs為16μm。又，電路基板30之電極32之厚度He2為20μm。又，第1接著劑層21之厚度Ha1為20μm，第2接著劑層22之厚度Ha2為50μm。
(評價結果)
將比較例4之評價結果示於表3。第1接著劑層之熔融黏度與第2接著劑層之熔融黏度之比的最大值為22。又，於搭載溫度(100℃)之第1接著劑層之熔融黏度η 1與第2接著劑層之熔融黏度η 2的比為0.47。又，搭載時之第1接著劑層之厚度Hb1為2μm。又，構裝體之焊料潤濕性之評價為 ×，導通電阻之評價為×，且孔隙之評價為○。
[比較例5]
(電路連接材料之製作)
使用NCF-A作為第1接著劑層，使用NCF-B作為第2接著劑層，並使用輥貼合機進行層疊，而製作NCF-A(Ha1=25μm)/NCF-B(Ha2=25μm)之雙層構成之底部填充膜。
(構裝體之製作)
除底部填充膜，及於150℃-5秒-10 N之條件下進行加熱加壓後，於200℃-20秒-30 N之條件進行熱壓接以外，以與實施例1相同之方式製作構裝體。即，於圖1所示之剖面圖中，半導體晶片10之電極12之厚度He1為20μm，焊料13之厚度Hs為16μm。又，電路基板30之電極32之厚度He2為20μm。又，第1接著劑層21之厚度Ha1為25μm，第2接著劑層22之厚度Ha2為25μm。
(評價結果)
將比較例5之評價結果示於表3。第1接著劑層之熔融黏度與第2接著劑層之熔融黏度之比的最大值為70。又，於搭載溫度(100℃)之第1接著劑層之熔融黏度η 1與第2接著劑層之熔融黏度η 2的比為1.03。又，搭載時之第1接著劑層之厚度Hb1為25μm。又，構裝體之焊料潤濕性之評價為×，導通電阻之評價為×，且孔隙之評價為○。
[先前例]
(電路連接材料之製作)
製作NCF-A(厚度50μm)之單層構成之底部填充膜。
(構裝體之製作)
除底部填充膜以外，以與實施例1相同之方式製作構裝體。即，於圖1所示之剖面圖中，半導體晶片10之電極12之厚度He1為20μm，焊料13之厚度Hs為16μm。又，電路基板30之電極32之厚度He2為20μm。
(評價結果)
將先前例之評價結果示於表3。構裝體之焊料潤濕性之評價為×，導通電阻之評價為×，且孔隙之評價為◎。
比較例1中，由於第2接著劑層之最低熔融黏度到達溫度 T2低於第1接著劑層之最低熔融黏度到達溫度T1，不滿足T1<T2，因此焊料未向對向電極潤濕擴展，且出現於溫度循環(TCT)試驗後導通電阻成為斷路(open)之端子。
比較例2係於搭載溫度(100℃)之第1接著劑層之熔融黏 度η 1與第2接著劑層的熔融黏度η 2之比為0.8以上之情形，搭載前之第1接著劑層之厚度Ha1小於厚度基準值，因此搭載後之第1接著劑層之厚度Hb1不滿足式(1)。因此，比較例2中焊料未向對向電極潤濕擴展，且出現於溫度循環(TCT)試驗後導通電阻成為斷路之端子。
比較例3係於搭載溫度(100℃)之第1接著劑層之熔融黏 度η 1與第2接著劑層的熔融黏度η 2之比為0.8以上之情形，搭載前之第1接著劑層之厚度Ha1大於厚度基準值，因此搭載後之第1接著劑層之厚度Hb1不滿足式(1)。因此，比較例3中焊料未向對向電極潤濕擴展，且出現於溫度循環(TCT)試驗後導通電阻成為斷路之端子。
比較例4係於搭載溫度(100℃)之第1接著劑層之熔融黏 度η 1與第2接著劑層的熔融黏度η 2之比為0.6以下之情形，搭載前之第2接著劑層之厚度Ha2大於厚度基準值，因此搭載後之第1接著劑層之厚度Hb1不滿足式(1)。因此，比較例4中焊料未向對向電極潤濕擴展，且出現於溫度循環(TCT)試驗後導通電阻成為斷路之端子。
比較例5中，由於壓接時之加熱溫度低於焊料熔點，因此焊 料未向對向電極潤濕擴展，且出現於溫度循環(TCT)試驗後導通電阻成為斷路之端子。
先前例中，焊料未向對向電極潤濕擴展，因此出現於溫度循 環(TCT)試驗後導通電阻成為斷路之端子。
另一方面，實施例1~4、6、7係於搭載溫度(100℃)之第 1接著劑層之熔融黏度η 1與第2接著劑層的熔融黏度η 2之比為0.8以上之情形，搭載前之第1接著劑層之厚度Ha1為厚度基準值之範圍，因此搭載後之第1接著劑層之厚度Hb1滿足式(1)。因此，焊料充分地潤濕擴展至對向電極，且未出現於溫度循環(TCT)試驗後導通電阻成為斷路之端子。
又，實施例5係於搭載溫度(100℃)之第1接著劑層之熔 融黏度η 1與第2接著劑層的熔融黏度η 2之比為0.6以下之情形，搭載前之第2接著劑層之厚度Ha2為厚度基準值之範圍，因此搭載後之第1接著劑層之厚度Hb1滿足式(1)。因此，焊料充分地潤濕擴展至對向電極，且未出現於溫度循環(TCT)試驗後導通電阻成為斷路之端子。
又，實施例2、6中，由於第1接著劑層及第2接著劑層兩 者具有環氧系與自由基系之2種硬化反應，因此即便進行如搭載溫度與壓接時最高到達溫度之差為70℃以上的急速加熱，亦可防止孔隙之產生。
10‧‧‧半導體晶片
11‧‧‧半導體
12‧‧‧電極
20‧‧‧電路連接材料
22‧‧‧第2接著劑層
30‧‧‧電路基板
31‧‧‧基材
32‧‧‧對向電極
Hb1‧‧‧搭載後之第1接著劑層之厚度
Hb2‧‧‧搭載後之第2接著劑層的厚度

Claims (9)

  1. 一種電路連接材料，其係用以將形成有附有焊料之電極的半導體晶片、與形成有與上述附有焊料之電極相對向之對向電極的電路基板接合者，且其係將接著於上述半導體晶片側的第1接著劑層、與具有高於該第1接著劑層之最低熔融黏度到達溫度之最低熔融黏度到達溫度的第2接著劑層積層，當於低於上述第1接著劑層之最低熔融黏度到達溫度之溫度，將貼附有該電路連接材料之上述半導體晶片搭載於上述電路基板時，上述第1接著劑層之厚度Hb1為滿足下述式(1)之範圍：0.5×He1≦Hb1≦He1+0.75×Hs (1)上述式(1)中，He1為上述附有焊料之電極之電極厚度，Hs為上述附有焊料之電極之焊料厚度。
  2. 如申請專利範圍第1項之電路連接材料，其中當於低於上述第1接著劑層之最低熔融黏度到達溫度之溫度，將貼附有該電路連接材料之上述半導體晶片搭載於上述電路基板時，上述第1接著劑層之厚度Hb1為滿足下述式(2)之範圍：0.75×He1≦Hb1≦He1+0.75×Hs (2)上述式(2)中，He1為上述附有焊料之電極之電極厚度，Hs為上述附有焊料之電極之焊料厚度。
  3. 如申請專利範圍第1項或第2項之電路連接材料，其中上述第1接著劑層之熔融黏度與上述第2接著劑層之熔融黏度之比的最大值為10以上。
  4. 如申請專利範圍第1項或第2項之電路連接材料，其中上述第1接著劑層及上述第2接著劑層含有膜形成樹脂、環氧樹脂、環氧硬化劑、丙烯酸系樹脂、自由基聚合起始劑。
  5. 如申請專利範圍第1項或第2項之電路連接材料，其中於在將上述半導體晶片搭載於上述電路基板之溫度，上述第1接著劑層之熔融黏度η 1與上述第2接著劑層之熔融黏度η 2之比(η 1/η 2)為0.8以上的情形時，搭載前之第1接著劑層之厚度Ha1及第2接著劑層之厚度Ha2為滿足下述式(3-1)及式(3-2)之範圍：0.5×He1≦Ha1≦He1+0.75×Hs (3-1) He1+He2≦Ha1+Ha2 (3-2)上述式(3-1)及式(3-2)中，He1為上述附有焊料之電極之電極厚度，Hs為上述附有焊料之電極之焊料厚度，He2為上述對向電極之電極厚度。
  6. 如申請專利範圍第1項或第2項之電路連接材料，其中於在將上述半導體晶片搭載於上述電路基板之溫度，上述第1接著劑層之熔融黏度η 1與上述第2接著劑層之熔融黏度η 2之比(η 1/η 2)為0.6以下的情形時，搭載前之第1接著劑層之厚度Ha1及上述第2接著劑層之厚度Ha2為滿足下述式(4-1)至式(4-3)之範圍：0.5×He1≦Ha1 (4-1) 0.25×Hs+He2≦Ha2≦0.5×He1+Hs+He2 (4-2) He1+He2≦Ha1+Ha2 (4-3)上述式(4-1)至式(4-3)中，He1為上述附有焊料之電極之電極厚 度，Hs為上述附有焊料之電極之焊料厚度，He2為上述對向電極之電極厚度。
  7. 一種半導體裝置之製造方法，其係將形成有附有焊料之電極的半導體晶片、與形成有與上述附有焊料之電極相對向之對向電極的電路基板，經由電路連接材料加以接合，該電路連接材料由接著於上述半導體晶片側的第1接著劑層、與具有高於該第1接著劑層之最低熔融黏度到達溫度之最低熔融黏度到達溫度的第2接著劑層所積層而成，且該製造方法具有如下步驟：搭載步驟，於低於上述第1接著劑層之最低熔融黏度到達溫度之溫度，將貼附有上述電路連接材料之上述半導體晶片搭載於上述電路基板，使上述第1接著劑層之厚度Hb1為滿足下述式(1)之範圍：0.5×He1≦Hb1≦He1+0.75×Hs (1)上述式(1)中，He1為上述附有焊料之電極之電極厚度，Hs為上述附有焊料之電極之焊料厚度；及熱壓接步驟，於上述附有焊料之電極的焊料之熔點以上之溫度，對上述半導體晶片與上述電路基板進行熱壓接。
  8. 如申請專利範圍第7項之半導體裝置之製造方法，其進而具有如下步驟：於晶圓上貼附電路連接材料之步驟；及切割上述晶圓，分割成單個之半導體晶片之步驟。
  9. 一種半導體裝置之製造方法，其係將具有形成有附有焊料之電極的第1面、與於第1面之相反側形成有與上述附有焊料之電極相對向之對向電極的第2面之複數片晶片基板，經由電路連接材料加以積層，該電路連 接材料由接著於上述第1面側的第1接著劑層、與具有高於該第1接著劑層之最低熔融黏度到達溫度之最低熔融黏度到達溫度的第2接著劑層所積層而成，且該製造方法具有如下步驟：搭載步驟，於低於上述第1接著劑層之最低熔融黏度到達溫度之溫度，將貼附有上述電路連接材料之第1晶片基板之第1面搭載於第2晶片基板之第2面，使上述第1接著劑層之厚度Hb1為滿足下述式(1)之範圍：0.5×He1≦Hb1≦He1+0.75×Hs (1)上述式(1)中，He1為上述附有焊料之電極之電極厚度，Hs為上述附有焊料之電極之焊料厚度；及熱壓接步驟，於上述附有焊料之電極的焊料之熔點以上之溫度，對上述第1晶片基板之第1面與上述第2晶片基板之第2面進行熱壓接。
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