TW201133859A - Semiconductor device and display device - Google Patents

Semiconductor device and display device Download PDF

Info

Publication number
TW201133859A
TW201133859A TW099126360A TW99126360A TW201133859A TW 201133859 A TW201133859 A TW 201133859A TW 099126360 A TW099126360 A TW 099126360A TW 99126360 A TW99126360 A TW 99126360A TW 201133859 A TW201133859 A TW 201133859A
Authority
TW
Taiwan
Prior art keywords
electrode
plan
view
gate electrode
channel
Prior art date
Application number
TW099126360A
Other languages
English (en)
Chinese (zh)
Inventor
Michihiro Kanno
Takahiro Kawamura
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW201133859A publication Critical patent/TW201133859A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
TW099126360A 2009-09-30 2010-08-06 Semiconductor device and display device TW201133859A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009227013A JP5532803B2 (ja) 2009-09-30 2009-09-30 半導体デバイスおよび表示装置

Publications (1)

Publication Number Publication Date
TW201133859A true TW201133859A (en) 2011-10-01

Family

ID=43779296

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099126360A TW201133859A (en) 2009-09-30 2010-08-06 Semiconductor device and display device

Country Status (5)

Country Link
US (1) US20110073860A1 (enExample)
JP (1) JP5532803B2 (enExample)
KR (1) KR20110035891A (enExample)
CN (1) CN102034873B (enExample)
TW (1) TW201133859A (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101952570B1 (ko) * 2011-05-13 2019-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP6035734B2 (ja) * 2011-06-20 2016-11-30 ソニー株式会社 半導体素子、表示装置および電子機器
CN102254917B (zh) * 2011-07-07 2014-05-21 深圳市华星光电技术有限公司 薄膜晶体管阵列基板及其制法
US8716708B2 (en) * 2011-09-29 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101951260B1 (ko) * 2012-03-15 2019-02-25 삼성디스플레이 주식회사 박막트랜지스터, 상기 박막트랜지스터를 포함하는 표시 장치 및 상기 박막트랜지스터를 포함하는 유기 발광 표시 장치
CN202487578U (zh) 2012-03-27 2012-10-10 京东方科技集团股份有限公司 薄膜晶体管、阵列基板及显示装置
JP6001308B2 (ja) * 2012-04-17 2016-10-05 株式会社半導体エネルギー研究所 半導体装置
CN103943684B (zh) 2014-03-26 2017-09-29 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、阵列基板、显示装置
CN104134699A (zh) * 2014-07-15 2014-11-05 京东方科技集团股份有限公司 一种薄膜晶体管、阵列基板及显示装置
US9468050B1 (en) * 2014-09-25 2016-10-11 X-Celeprint Limited Self-compensating circuit for faulty display pixels
US9799261B2 (en) 2014-09-25 2017-10-24 X-Celeprint Limited Self-compensating circuit for faulty display pixels
CN104409513A (zh) * 2014-11-05 2015-03-11 京东方科技集团股份有限公司 一种金属氧化物薄膜晶体管及其制备方法、阵列基板
US10255834B2 (en) 2015-07-23 2019-04-09 X-Celeprint Limited Parallel redundant chiplet system for controlling display pixels
JP6240692B2 (ja) * 2016-02-15 2017-11-29 株式会社ジャパンディスプレイ 表示装置および表示装置の製造方法
US9882064B2 (en) * 2016-03-10 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Transistor and electronic device
US10950705B2 (en) * 2017-02-15 2021-03-16 Sharp Kabushiki Kaisha Active matrix substrate
CN107895726A (zh) * 2017-11-30 2018-04-10 武汉天马微电子有限公司 一种阵列基板及其制作方法和显示装置
TWI717855B (zh) * 2019-10-05 2021-02-01 友達光電股份有限公司 畫素電路及顯示裝置
KR102371366B1 (ko) * 2020-08-10 2022-03-04 재단법인대구경북과학기술원 반도체 트랜지스터
US11469195B2 (en) * 2020-09-24 2022-10-11 Nanya Technology Corporation Semiconductor device with tilted insulating layers and method for fabricating the same
CN114863828B (zh) * 2022-05-31 2023-07-25 武汉华星光电半导体显示技术有限公司 拼接屏
CN120112092B (zh) * 2025-05-08 2025-09-30 合肥维信诺科技有限公司 显示面板、显示面板的制造方法及电子设备

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5187551A (en) * 1988-04-30 1993-02-16 Sharp Kabushiki Kaisha Thin film semiconductor device and liquid crystal display apparatus thereof for preventing irradiated light from reaching the semiconductor layers
JP2635885B2 (ja) * 1992-06-09 1997-07-30 インターナショナル・ビジネス・マシーンズ・コーポレイション 薄膜トランジスタ及びアクティブマトリクス液晶表示装置
US5461250A (en) * 1992-08-10 1995-10-24 International Business Machines Corporation SiGe thin film or SOI MOSFET and method for making the same
KR0139573B1 (ko) * 1994-12-26 1998-06-15 김주용 이중 채널 박막트랜지스터 및 그 제조방법
KR100205306B1 (ko) * 1995-12-26 1999-07-01 구본준 박막트랜지스터의 제조방법
CN100373563C (zh) * 1998-06-30 2008-03-05 东芝松下显示技术有限公司 顶栅型薄膜晶体管的制造方法
JP3420201B2 (ja) * 1999-12-22 2003-06-23 日本電気株式会社 液晶表示装置
US7058283B2 (en) * 2000-06-08 2006-06-06 Sony Corporation Magnetic tape tracking control apparatus and method, magnetic tape format, recording medium and program
JP2004343018A (ja) * 2003-03-20 2004-12-02 Fujitsu Ltd 半導体装置及びその製造方法
JP2005079560A (ja) * 2003-09-04 2005-03-24 Hitachi Ltd 薄膜トランジスタ，表示装置、およびその製造方法
KR100585410B1 (ko) * 2003-11-11 2006-06-07 엘지.필립스 엘시디 주식회사 구동회로 일체형 액정표시장치의 스위칭 소자 및 구동소자및 그 제조방법
CN100463193C (zh) * 2006-11-03 2009-02-18 北京京东方光电科技有限公司 一种tft阵列结构及其制造方法
KR101410926B1 (ko) * 2007-02-16 2014-06-24 삼성전자주식회사 박막 트랜지스터 및 그 제조방법
JP2008258345A (ja) * 2007-04-04 2008-10-23 Sony Corp 薄膜トランジスタおよびその製造方法ならびに表示装置
JP5245287B2 (ja) * 2007-05-18 2013-07-24 ソニー株式会社 半導体装置の製造方法、薄膜トランジスタ基板の製造方法および表示装置の製造方法
KR101533098B1 (ko) * 2008-06-04 2015-07-02 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법
KR101929726B1 (ko) * 2009-07-18 2018-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법

Also Published As

Publication number Publication date
KR20110035891A (ko) 2011-04-06
JP5532803B2 (ja) 2014-06-25
JP2011077283A (ja) 2011-04-14
CN102034873A (zh) 2011-04-27
US20110073860A1 (en) 2011-03-31
CN102034873B (zh) 2014-04-16

Similar Documents

Publication Publication Date Title
TW201133859A (en) Semiconductor device and display device
JP5909746B2 (ja) 半導体装置及び表示装置
JP4309362B2 (ja) 薄膜トランジスタの製造方法
CN101226311B (zh) 显示装置
CN115810634A (zh) 显示装置
US9508749B2 (en) Display substrates and methods of manufacturing display substrates
TWI519881B (zh) 陣列基板及其製造方法
TW200304227A (en) Top gate type thin film transistor
US9911618B2 (en) Low temperature poly-silicon thin film transistor, fabricating method thereof, array substrate and display device
TW200915575A (en) Display device and method of manufacturing the same
CN102405527A (zh) 显示装置用薄膜半导体器件及其制造方法
TW200427095A (en) Thin film transistor and method for fabricating thereof
CN103594521B (zh) 半导体元件
CN100552977C (zh) 薄膜晶体管、平板显示装置及其制备方法
JP2004343018A (ja) 半導体装置及びその製造方法
JP2005228819A (ja) 半導体装置
TWI491042B (zh) 半導體裝置及其製造方法
TW201232710A (en) Vertical DMOS-field effect transistor
JP4160013B2 (ja) 半導体装置
JP2002270851A (ja) 半導体装置の製造方法
JP2006287084A (ja) 薄膜トランジスタ素子およびその製造方法
US20230042988A1 (en) Vertical-structure field-effect transistor and manufacturing method therefor
JP4323037B2 (ja) 薄膜半導体装置
JP3812566B2 (ja) 薄膜トランジスタ及びそれを用いた液晶表示装置及び薄膜トランジスタ回路
JP5295172B2 (ja) 半導体装置