CN102034873B - 薄膜晶体管和制造薄膜晶体管的方法 - Google Patents

薄膜晶体管和制造薄膜晶体管的方法 Download PDF

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Publication number
CN102034873B
CN102034873B CN201010275594.9A CN201010275594A CN102034873B CN 102034873 B CN102034873 B CN 102034873B CN 201010275594 A CN201010275594 A CN 201010275594A CN 102034873 B CN102034873 B CN 102034873B
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electrode
gate electrode
plan
edge
thin film
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CN102034873A (zh
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菅野道博
河村隆宏
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Magno Bolan Co ltd
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

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  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
CN201010275594.9A 2009-09-30 2010-09-08 薄膜晶体管和制造薄膜晶体管的方法 Active CN102034873B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009227013A JP5532803B2 (ja) 2009-09-30 2009-09-30 半導体デバイスおよび表示装置
JP2009-227013 2009-09-30

Publications (2)

Publication Number Publication Date
CN102034873A CN102034873A (zh) 2011-04-27
CN102034873B true CN102034873B (zh) 2014-04-16

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Country Link
US (1) US20110073860A1 (enExample)
JP (1) JP5532803B2 (enExample)
KR (1) KR20110035891A (enExample)
CN (1) CN102034873B (enExample)
TW (1) TW201133859A (enExample)

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WO2016008224A1 (zh) * 2014-07-15 2016-01-21 京东方科技集团股份有限公司 薄膜晶体管、阵列基板及显示装置

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JP6035734B2 (ja) * 2011-06-20 2016-11-30 ソニー株式会社 半導体素子、表示装置および電子機器
CN102254917B (zh) * 2011-07-07 2014-05-21 深圳市华星光电技术有限公司 薄膜晶体管阵列基板及其制法
US8716708B2 (en) * 2011-09-29 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101951260B1 (ko) * 2012-03-15 2019-02-25 삼성디스플레이 주식회사 박막트랜지스터, 상기 박막트랜지스터를 포함하는 표시 장치 및 상기 박막트랜지스터를 포함하는 유기 발광 표시 장치
CN202487578U (zh) 2012-03-27 2012-10-10 京东方科技集团股份有限公司 薄膜晶体管、阵列基板及显示装置
JP6001308B2 (ja) * 2012-04-17 2016-10-05 株式会社半導体エネルギー研究所 半導体装置
CN103943684B (zh) 2014-03-26 2017-09-29 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、阵列基板、显示装置
US9468050B1 (en) * 2014-09-25 2016-10-11 X-Celeprint Limited Self-compensating circuit for faulty display pixels
US9799261B2 (en) 2014-09-25 2017-10-24 X-Celeprint Limited Self-compensating circuit for faulty display pixels
CN104409513A (zh) * 2014-11-05 2015-03-11 京东方科技集团股份有限公司 一种金属氧化物薄膜晶体管及其制备方法、阵列基板
US10255834B2 (en) 2015-07-23 2019-04-09 X-Celeprint Limited Parallel redundant chiplet system for controlling display pixels
JP6240692B2 (ja) * 2016-02-15 2017-11-29 株式会社ジャパンディスプレイ 表示装置および表示装置の製造方法
US9882064B2 (en) * 2016-03-10 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Transistor and electronic device
US10950705B2 (en) * 2017-02-15 2021-03-16 Sharp Kabushiki Kaisha Active matrix substrate
CN107895726A (zh) * 2017-11-30 2018-04-10 武汉天马微电子有限公司 一种阵列基板及其制作方法和显示装置
TWI717855B (zh) * 2019-10-05 2021-02-01 友達光電股份有限公司 畫素電路及顯示裝置
KR102371366B1 (ko) * 2020-08-10 2022-03-04 재단법인대구경북과학기술원 반도체 트랜지스터
US11469195B2 (en) * 2020-09-24 2022-10-11 Nanya Technology Corporation Semiconductor device with tilted insulating layers and method for fabricating the same
CN114863828B (zh) * 2022-05-31 2023-07-25 武汉华星光电半导体显示技术有限公司 拼接屏
CN120112092B (zh) * 2025-05-08 2025-09-30 合肥维信诺科技有限公司 显示面板、显示面板的制造方法及电子设备

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KR20110035891A (ko) 2011-04-06
JP5532803B2 (ja) 2014-06-25
JP2011077283A (ja) 2011-04-14
TW201133859A (en) 2011-10-01
CN102034873A (zh) 2011-04-27
US20110073860A1 (en) 2011-03-31

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