CN102034873A - 薄膜晶体管和制造薄膜晶体管的方法 - Google Patents
薄膜晶体管和制造薄膜晶体管的方法 Download PDFInfo
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- CN102034873A CN102034873A CN2010102755949A CN201010275594A CN102034873A CN 102034873 A CN102034873 A CN 102034873A CN 2010102755949 A CN2010102755949 A CN 2010102755949A CN 201010275594 A CN201010275594 A CN 201010275594A CN 102034873 A CN102034873 A CN 102034873A
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- 239000010409 thin film Substances 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000010408 film Substances 0.000 claims abstract description 203
- 239000000463 material Substances 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000011241 protective layer Substances 0.000 claims 20
- 239000004065 semiconductor Substances 0.000 abstract description 136
- 230000003071 parasitic effect Effects 0.000 abstract description 25
- 230000015572 biosynthetic process Effects 0.000 description 37
- 230000005684 electric field Effects 0.000 description 25
- 230000000694 effects Effects 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 230000008901 benefit Effects 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 238000005530 etching Methods 0.000 description 12
- 239000012535 impurity Substances 0.000 description 12
- 238000005070 sampling Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 230000012447 hatching Effects 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 239000013081 microcrystal Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000002800 charge carrier Substances 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- 102100036285 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Human genes 0.000 description 2
- 101000875403 Homo sapiens 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Proteins 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000003467 diminishing effect Effects 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000005596 ionic collisions Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 210000003141 lower extremity Anatomy 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Abstract
Description
Claims (22)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009227013A JP5532803B2 (ja) | 2009-09-30 | 2009-09-30 | 半導体デバイスおよび表示装置 |
JP2009-227013 | 2009-09-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102034873A true CN102034873A (zh) | 2011-04-27 |
CN102034873B CN102034873B (zh) | 2014-04-16 |
Family
ID=43779296
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010275594.9A Active CN102034873B (zh) | 2009-09-30 | 2010-09-08 | 薄膜晶体管和制造薄膜晶体管的方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20110073860A1 (zh) |
JP (1) | JP5532803B2 (zh) |
KR (1) | KR20110035891A (zh) |
CN (1) | CN102034873B (zh) |
TW (1) | TW201133859A (zh) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102842674A (zh) * | 2011-06-20 | 2012-12-26 | 索尼公司 | 半导体元件、其制造方法、显示装置和电子装置 |
CN103311309A (zh) * | 2012-03-15 | 2013-09-18 | 三星显示有限公司 | 薄膜晶体管、显示设备和有机发光显示设备 |
WO2013143370A1 (zh) * | 2012-03-27 | 2013-10-03 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板及显示装置 |
CN103943684A (zh) * | 2014-03-26 | 2014-07-23 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、阵列基板、显示装置 |
CN104134699A (zh) * | 2014-07-15 | 2014-11-05 | 京东方科技集团股份有限公司 | 一种薄膜晶体管、阵列基板及显示装置 |
CN107895726A (zh) * | 2017-11-30 | 2018-04-10 | 武汉天马微电子有限公司 | 一种阵列基板及其制作方法和显示装置 |
CN110291644A (zh) * | 2017-02-15 | 2019-09-27 | 夏普株式会社 | 有源矩阵基板 |
CN111326103A (zh) * | 2019-10-05 | 2020-06-23 | 友达光电股份有限公司 | 像素电路及显示装置 |
CN114863828A (zh) * | 2022-05-31 | 2022-08-05 | 武汉华星光电半导体显示技术有限公司 | 拼接屏 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101952570B1 (ko) * | 2011-05-13 | 2019-02-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
CN102254917B (zh) | 2011-07-07 | 2014-05-21 | 深圳市华星光电技术有限公司 | 薄膜晶体管阵列基板及其制法 |
US8716708B2 (en) * | 2011-09-29 | 2014-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP6001308B2 (ja) * | 2012-04-17 | 2016-10-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9468050B1 (en) * | 2014-09-25 | 2016-10-11 | X-Celeprint Limited | Self-compensating circuit for faulty display pixels |
US9799261B2 (en) | 2014-09-25 | 2017-10-24 | X-Celeprint Limited | Self-compensating circuit for faulty display pixels |
CN104409513A (zh) * | 2014-11-05 | 2015-03-11 | 京东方科技集团股份有限公司 | 一种金属氧化物薄膜晶体管及其制备方法、阵列基板 |
US10255834B2 (en) | 2015-07-23 | 2019-04-09 | X-Celeprint Limited | Parallel redundant chiplet system for controlling display pixels |
JP6240692B2 (ja) * | 2016-02-15 | 2017-11-29 | 株式会社ジャパンディスプレイ | 表示装置および表示装置の製造方法 |
US9882064B2 (en) * | 2016-03-10 | 2018-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and electronic device |
KR102371366B1 (ko) * | 2020-08-10 | 2022-03-04 | 재단법인대구경북과학기술원 | 반도체 트랜지스터 |
Citations (4)
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US5416340A (en) * | 1992-06-09 | 1995-05-16 | International Business Machines Corporation | Thin film transistor and active matrix liquid crystal display device having reduced photoelectric leakage current due to incident light |
US6271064B2 (en) * | 1995-12-26 | 2001-08-07 | Lg Semicon Co., Ltd. | Thin film transistor and method of manufacturing the same |
US20050099551A1 (en) * | 2003-11-11 | 2005-05-12 | Lg.Philips Lcd Co., Ltd. | Liquid crystal display device including polycrystalline silicon thin film transistor and method of fabricating the same |
CN101005083A (zh) * | 2006-11-03 | 2007-07-25 | 京东方科技集团股份有限公司 | 一种tft阵列结构及其制造方法 |
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US5187551A (en) * | 1988-04-30 | 1993-02-16 | Sharp Kabushiki Kaisha | Thin film semiconductor device and liquid crystal display apparatus thereof for preventing irradiated light from reaching the semiconductor layers |
US5461250A (en) * | 1992-08-10 | 1995-10-24 | International Business Machines Corporation | SiGe thin film or SOI MOSFET and method for making the same |
KR0139573B1 (ko) * | 1994-12-26 | 1998-06-15 | 김주용 | 이중 채널 박막트랜지스터 및 그 제조방법 |
WO2000001016A1 (fr) * | 1998-06-30 | 2000-01-06 | Matsushita Electric Industrial Co., Ltd. | Transistor a film mince et son procede de fabrication |
JP3420201B2 (ja) * | 1999-12-22 | 2003-06-23 | 日本電気株式会社 | 液晶表示装置 |
US7058283B2 (en) * | 2000-06-08 | 2006-06-06 | Sony Corporation | Magnetic tape tracking control apparatus and method, magnetic tape format, recording medium and program |
JP2004343018A (ja) * | 2003-03-20 | 2004-12-02 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2005079560A (ja) * | 2003-09-04 | 2005-03-24 | Hitachi Ltd | 薄膜トランジスタ,表示装置、およびその製造方法 |
KR101410926B1 (ko) * | 2007-02-16 | 2014-06-24 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조방법 |
JP2008258345A (ja) * | 2007-04-04 | 2008-10-23 | Sony Corp | 薄膜トランジスタおよびその製造方法ならびに表示装置 |
JP5245287B2 (ja) * | 2007-05-18 | 2013-07-24 | ソニー株式会社 | 半導体装置の製造方法、薄膜トランジスタ基板の製造方法および表示装置の製造方法 |
KR101533098B1 (ko) * | 2008-06-04 | 2015-07-02 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
WO2011010544A1 (en) * | 2009-07-18 | 2011-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
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2009
- 2009-09-30 JP JP2009227013A patent/JP5532803B2/ja active Active
-
2010
- 2010-08-06 TW TW099126360A patent/TW201133859A/zh unknown
- 2010-09-08 CN CN201010275594.9A patent/CN102034873B/zh active Active
- 2010-09-14 KR KR1020100089849A patent/KR20110035891A/ko not_active Application Discontinuation
- 2010-09-21 US US12/886,983 patent/US20110073860A1/en not_active Abandoned
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US5416340A (en) * | 1992-06-09 | 1995-05-16 | International Business Machines Corporation | Thin film transistor and active matrix liquid crystal display device having reduced photoelectric leakage current due to incident light |
US6271064B2 (en) * | 1995-12-26 | 2001-08-07 | Lg Semicon Co., Ltd. | Thin film transistor and method of manufacturing the same |
US20050099551A1 (en) * | 2003-11-11 | 2005-05-12 | Lg.Philips Lcd Co., Ltd. | Liquid crystal display device including polycrystalline silicon thin film transistor and method of fabricating the same |
CN101005083A (zh) * | 2006-11-03 | 2007-07-25 | 京东方科技集团股份有限公司 | 一种tft阵列结构及其制造方法 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102842674A (zh) * | 2011-06-20 | 2012-12-26 | 索尼公司 | 半导体元件、其制造方法、显示装置和电子装置 |
CN103311309A (zh) * | 2012-03-15 | 2013-09-18 | 三星显示有限公司 | 薄膜晶体管、显示设备和有机发光显示设备 |
WO2013143370A1 (zh) * | 2012-03-27 | 2013-10-03 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板及显示装置 |
US9123813B2 (en) | 2012-03-27 | 2015-09-01 | Boe Technology Group Co., Ltd. | Thin film transistor, array substrate and display device |
CN103943684A (zh) * | 2014-03-26 | 2014-07-23 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、阵列基板、显示装置 |
US9620652B2 (en) | 2014-03-26 | 2017-04-11 | Boe Technology Group Co., Ltd. | TFT and manufacturing method thereof, array substrate |
CN104134699A (zh) * | 2014-07-15 | 2014-11-05 | 京东方科技集团股份有限公司 | 一种薄膜晶体管、阵列基板及显示装置 |
CN110291644A (zh) * | 2017-02-15 | 2019-09-27 | 夏普株式会社 | 有源矩阵基板 |
CN107895726A (zh) * | 2017-11-30 | 2018-04-10 | 武汉天马微电子有限公司 | 一种阵列基板及其制作方法和显示装置 |
CN111326103A (zh) * | 2019-10-05 | 2020-06-23 | 友达光电股份有限公司 | 像素电路及显示装置 |
CN114863828A (zh) * | 2022-05-31 | 2022-08-05 | 武汉华星光电半导体显示技术有限公司 | 拼接屏 |
Also Published As
Publication number | Publication date |
---|---|
US20110073860A1 (en) | 2011-03-31 |
CN102034873B (zh) | 2014-04-16 |
JP2011077283A (ja) | 2011-04-14 |
KR20110035891A (ko) | 2011-04-06 |
TW201133859A (en) | 2011-10-01 |
JP5532803B2 (ja) | 2014-06-25 |
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