TW200919585A - Suppression of oxygen precipitation in heavily doped single crystal silicon substrates - Google Patents

Suppression of oxygen precipitation in heavily doped single crystal silicon substrates Download PDF

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Publication number
TW200919585A
TW200919585A TW097124444A TW97124444A TW200919585A TW 200919585 A TW200919585 A TW 200919585A TW 097124444 A TW097124444 A TW 097124444A TW 97124444 A TW97124444 A TW 97124444A TW 200919585 A TW200919585 A TW 200919585A
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TW
Taiwan
Prior art keywords
wafer
temperature
oxygen
highly doped
cooling
Prior art date
Application number
TW097124444A
Other languages
English (en)
Chinese (zh)
Inventor
Robert J Falster
Luca Moiraghi
Dong-Myun Lee
Chan-Rae Cho
Marco Ravani
Original Assignee
Memc Electronic Materials
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Filing date
Publication date
Application filed by Memc Electronic Materials filed Critical Memc Electronic Materials
Publication of TW200919585A publication Critical patent/TW200919585A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/20—Intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the silicon body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank

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  • Crystals, And After-Treatments Of Crystals (AREA)
TW097124444A 2007-06-29 2008-06-27 Suppression of oxygen precipitation in heavily doped single crystal silicon substrates TW200919585A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/771,667 US20090004426A1 (en) 2007-06-29 2007-06-29 Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates

Publications (1)

Publication Number Publication Date
TW200919585A true TW200919585A (en) 2009-05-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW097124444A TW200919585A (en) 2007-06-29 2008-06-27 Suppression of oxygen precipitation in heavily doped single crystal silicon substrates

Country Status (7)

Country Link
US (2) US20090004426A1 (enExample)
EP (1) EP2168150A1 (enExample)
JP (1) JP2010532584A (enExample)
KR (1) KR20100039291A (enExample)
CN (1) CN101689504A (enExample)
TW (1) TW200919585A (enExample)
WO (1) WO2009006182A1 (enExample)

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Also Published As

Publication number Publication date
CN101689504A (zh) 2010-03-31
US20090004426A1 (en) 2009-01-01
JP2010532584A (ja) 2010-10-07
KR20100039291A (ko) 2010-04-15
US20110177682A1 (en) 2011-07-21
EP2168150A1 (en) 2010-03-31
WO2009006182A1 (en) 2009-01-08

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