CN101689504A - 重掺杂的单晶硅衬底中的氧沉淀的抑制 - Google Patents

重掺杂的单晶硅衬底中的氧沉淀的抑制 Download PDF

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Publication number
CN101689504A
CN101689504A CN200880022738A CN200880022738A CN101689504A CN 101689504 A CN101689504 A CN 101689504A CN 200880022738 A CN200880022738 A CN 200880022738A CN 200880022738 A CN200880022738 A CN 200880022738A CN 101689504 A CN101689504 A CN 101689504A
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CN
China
Prior art keywords
wafer
heavily doped
silicon substrate
temperature
oxygen
Prior art date
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Pending
Application number
CN200880022738A
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English (en)
Chinese (zh)
Inventor
R·J·法尔斯特
L·莫伊拉吉
D·M·李
赵澯来
M·拉瓦尼
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SunEdison Inc
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SunEdison Inc
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Publication of CN101689504A publication Critical patent/CN101689504A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN200880022738A 2007-06-29 2008-06-26 重掺杂的单晶硅衬底中的氧沉淀的抑制 Pending CN101689504A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/771,667 2007-06-29
US11/771,667 US20090004426A1 (en) 2007-06-29 2007-06-29 Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates
PCT/US2008/068284 WO2009006182A1 (en) 2007-06-29 2008-06-26 Suppression of oxygen precipitation in heavily doped single crystal silicon substrates

Publications (1)

Publication Number Publication Date
CN101689504A true CN101689504A (zh) 2010-03-31

Family

ID=39672544

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200880022738A Pending CN101689504A (zh) 2007-06-29 2008-06-26 重掺杂的单晶硅衬底中的氧沉淀的抑制

Country Status (7)

Country Link
US (2) US20090004426A1 (enExample)
EP (1) EP2168150A1 (enExample)
JP (1) JP2010532584A (enExample)
KR (1) KR20100039291A (enExample)
CN (1) CN101689504A (enExample)
TW (1) TW200919585A (enExample)
WO (1) WO2009006182A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103620394A (zh) * 2011-04-15 2014-03-05 原子能和代替能源委员会 确定填隙氧浓度的方法
CN105121713A (zh) * 2013-04-24 2015-12-02 胜高科技股份有限公司 单晶的制造方法和硅晶片的制造方法
CN115831710A (zh) * 2022-11-01 2023-03-21 中环领先半导体材料有限公司 降低硅衬底缺陷以抑制硅基氮化镓外延片翘曲的方法

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US9634098B2 (en) * 2013-06-11 2017-04-25 SunEdison Semiconductor Ltd. (UEN201334164H) Oxygen precipitation in heavily doped silicon wafers sliced from ingots grown by the Czochralski method
WO2015003022A1 (en) * 2013-07-01 2015-01-08 Solexel, Inc. High-throughput thermal processing methods for producing high-efficiency crystalline silicon solar cells
US11111602B2 (en) 2014-07-31 2021-09-07 Globalwafers Co., Ltd. Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size
EP3469120B1 (en) * 2016-06-08 2022-02-02 GlobalWafers Co., Ltd. High resistivity single crystal silicon ingot and wafer having improved mechanical strength
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CN114121626B (zh) * 2020-08-27 2025-08-15 联华电子股份有限公司 一种制作半导体元件的方法
CN114242571B (zh) * 2021-12-09 2025-07-04 全球能源互联网研究院有限公司 一种半导体结构的制备方法

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103620394A (zh) * 2011-04-15 2014-03-05 原子能和代替能源委员会 确定填隙氧浓度的方法
CN103620394B (zh) * 2011-04-15 2015-11-25 原子能和代替能源委员会 确定填隙氧浓度的方法
US9274072B2 (en) 2011-04-15 2016-03-01 Commissariat à l'Energie Atomique et aux Energies Alternatives Method for determining interstitial oxygen concentration
CN105121713A (zh) * 2013-04-24 2015-12-02 胜高科技股份有限公司 单晶的制造方法和硅晶片的制造方法
CN115831710A (zh) * 2022-11-01 2023-03-21 中环领先半导体材料有限公司 降低硅衬底缺陷以抑制硅基氮化镓外延片翘曲的方法

Also Published As

Publication number Publication date
US20110177682A1 (en) 2011-07-21
WO2009006182A1 (en) 2009-01-08
KR20100039291A (ko) 2010-04-15
EP2168150A1 (en) 2010-03-31
TW200919585A (en) 2009-05-01
JP2010532584A (ja) 2010-10-07
US20090004426A1 (en) 2009-01-01

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Application publication date: 20100331