TW200901370A - Semiconductor device having fine pattern wiring lines integrally formed with contact plug and method of manufacturing same - Google Patents
Semiconductor device having fine pattern wiring lines integrally formed with contact plug and method of manufacturing same Download PDFInfo
- Publication number
- TW200901370A TW200901370A TW097109205A TW97109205A TW200901370A TW 200901370 A TW200901370 A TW 200901370A TW 097109205 A TW097109205 A TW 097109205A TW 97109205 A TW97109205 A TW 97109205A TW 200901370 A TW200901370 A TW 200901370A
- Authority
- TW
- Taiwan
- Prior art keywords
- insulating layer
- interlayer insulating
- contact
- mask pattern
- residual
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000010410 layer Substances 0.000 claims abstract description 332
- 239000011229 interlayer Substances 0.000 claims abstract description 120
- 238000000034 method Methods 0.000 claims abstract description 41
- 239000002131 composite material Substances 0.000 claims description 53
- 239000000463 material Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 20
- 238000000926 separation method Methods 0.000 claims description 18
- 239000004020 conductor Substances 0.000 claims description 14
- 238000009413 insulation Methods 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 3
- 230000003139 buffering effect Effects 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 238000003491 array Methods 0.000 claims 1
- 230000035622 drinking Effects 0.000 claims 1
- 238000007689 inspection Methods 0.000 claims 1
- 239000010977 jade Substances 0.000 claims 1
- 239000011295 pitch Substances 0.000 abstract description 21
- 150000004767 nitrides Chemical class 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 230000002829 reductive effect Effects 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000006117 anti-reflective coating Substances 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910003697 SiBN Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000000749 insecticidal effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070059103A KR100833201B1 (ko) | 2007-06-15 | 2007-06-15 | 콘택 플러그 및 배선 라인 일체형 구조의 미세 패턴을가지는 반도체 소자 및 그 제조 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200901370A true TW200901370A (en) | 2009-01-01 |
Family
ID=39665505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097109205A TW200901370A (en) | 2007-06-15 | 2008-03-14 | Semiconductor device having fine pattern wiring lines integrally formed with contact plug and method of manufacturing same |
Country Status (3)
| Country | Link |
|---|---|
| JP (2) | JP5492384B2 (ja) |
| KR (1) | KR100833201B1 (ja) |
| TW (1) | TW200901370A (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI607957B (zh) * | 2014-05-28 | 2017-12-11 | 台灣積體電路製造股份有限公司 | 自對準奈米線及其形成方法與積體電路 結構 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100833201B1 (ko) * | 2007-06-15 | 2008-05-28 | 삼성전자주식회사 | 콘택 플러그 및 배선 라인 일체형 구조의 미세 패턴을가지는 반도체 소자 및 그 제조 방법 |
| KR101648128B1 (ko) * | 2009-12-28 | 2016-08-24 | 삼성전자주식회사 | 가변적인 폭을 가지는 미세 패턴 형성 방법 및 이를 이용한 반도체 소자의 제조 방법 |
| FR2960700B1 (fr) * | 2010-06-01 | 2012-05-18 | Commissariat Energie Atomique | Procede de lithographie pour la realisation de reseaux de conducteurs relies par des vias |
| CN106941091B (zh) * | 2016-01-05 | 2021-03-05 | 联华电子股份有限公司 | 内连线结构、内连线布局结构及其制作方法 |
| WO2017136577A1 (en) * | 2016-02-02 | 2017-08-10 | Tokyo Electron Limited | Self-alignment of metal and via using selective deposition |
| US10727056B2 (en) | 2017-11-23 | 2020-07-28 | Yangtze Memory Technologies Co., Ltd. | Method and structure for cutting dense line patterns using self-aligned double patterning |
| CN107968047A (zh) * | 2017-11-23 | 2018-04-27 | 长江存储科技有限责任公司 | 一种sadp页缓冲器切断方法及结构 |
| WO2019195422A1 (en) * | 2018-04-03 | 2019-10-10 | Tokyo Electron Limited | Subtractive interconnect formation using a fully self-aligned scheme |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3412843B2 (ja) * | 1992-09-07 | 2003-06-03 | 三菱電機株式会社 | 多層配線の形成方法及び半導体装置 |
| JP2872086B2 (ja) * | 1995-08-30 | 1999-03-17 | 日本電気株式会社 | 半導体装置の製造方法 |
| JPH09153545A (ja) * | 1995-09-29 | 1997-06-10 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP3445495B2 (ja) * | 1997-07-23 | 2003-09-08 | 株式会社東芝 | 半導体装置 |
| JP3501280B2 (ja) * | 1998-08-31 | 2004-03-02 | 富士通株式会社 | 半導体装置の製造方法 |
| JP4074014B2 (ja) * | 1998-10-27 | 2008-04-09 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP2001093910A (ja) * | 1999-09-27 | 2001-04-06 | Toshiba Corp | 半導体装置の製造方法 |
| JP2002203897A (ja) * | 2000-12-27 | 2002-07-19 | Nec Corp | 半導体装置の製造方法 |
| JP2002280388A (ja) * | 2001-03-15 | 2002-09-27 | Toshiba Corp | 半導体装置の製造方法 |
| JP2003188252A (ja) * | 2001-12-13 | 2003-07-04 | Toshiba Corp | 半導体装置及びその製造方法 |
| KR20050103689A (ko) | 2004-04-27 | 2005-11-01 | 삼성전자주식회사 | 반도체 장치 제조 방법 |
| KR100602086B1 (ko) | 2004-07-13 | 2006-07-19 | 동부일렉트로닉스 주식회사 | 반도체 소자의 배선 형성방법 |
| JP4619839B2 (ja) * | 2005-03-16 | 2011-01-26 | 株式会社東芝 | パターン形成方法 |
| JP4247198B2 (ja) * | 2005-03-31 | 2009-04-02 | 株式会社東芝 | 半導体装置の製造方法 |
| KR100640640B1 (ko) * | 2005-04-19 | 2006-10-31 | 삼성전자주식회사 | 미세 피치의 하드마스크를 이용한 반도체 소자의 미세 패턴형성 방법 |
| KR100833201B1 (ko) * | 2007-06-15 | 2008-05-28 | 삼성전자주식회사 | 콘택 플러그 및 배선 라인 일체형 구조의 미세 패턴을가지는 반도체 소자 및 그 제조 방법 |
| US7829262B2 (en) * | 2005-08-31 | 2010-11-09 | Micron Technology, Inc. | Method of forming pitch multipled contacts |
| US7960797B2 (en) * | 2006-08-29 | 2011-06-14 | Micron Technology, Inc. | Semiconductor devices including fine pitch arrays with staggered contacts |
-
2007
- 2007-06-15 KR KR1020070059103A patent/KR100833201B1/ko active IP Right Grant
-
2008
- 2008-03-14 TW TW097109205A patent/TW200901370A/zh unknown
- 2008-04-14 JP JP2008104941A patent/JP5492384B2/ja active Active
-
2013
- 2013-06-03 JP JP2013117185A patent/JP5667240B2/ja active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI607957B (zh) * | 2014-05-28 | 2017-12-11 | 台灣積體電路製造股份有限公司 | 自對準奈米線及其形成方法與積體電路 結構 |
| US10163723B2 (en) | 2014-05-28 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-aligned nanowire formation using double patterning |
| US10504792B2 (en) | 2014-05-28 | 2019-12-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-aligned nanowire formation using double patterning |
| US10879129B2 (en) | 2014-05-28 | 2020-12-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-aligned nanowire formation using double patterning |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013168687A (ja) | 2013-08-29 |
| JP2008311623A (ja) | 2008-12-25 |
| JP5492384B2 (ja) | 2014-05-14 |
| KR100833201B1 (ko) | 2008-05-28 |
| JP5667240B2 (ja) | 2015-02-12 |
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