TW200835765A - Optical bonding composition for LED light source - Google Patents

Optical bonding composition for LED light source Download PDF

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Publication number
TW200835765A
TW200835765A TW096143625A TW96143625A TW200835765A TW 200835765 A TW200835765 A TW 200835765A TW 096143625 A TW096143625 A TW 096143625A TW 96143625 A TW96143625 A TW 96143625A TW 200835765 A TW200835765 A TW 200835765A
Authority
TW
Taiwan
Prior art keywords
light source
metal oxide
led
oxide
led light
Prior art date
Application number
TW096143625A
Other languages
English (en)
Chinese (zh)
Inventor
Amy Suzanne Barnes
D Scott Thompson
Brant Ulrick Kolb
Todd Adrian Ballen
Jacqueline C Rolf
Robert Lewis Brott
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of TW200835765A publication Critical patent/TW200835765A/zh

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Device Packages (AREA)
  • Fastening Of Light Sources Or Lamp Holders (AREA)
TW096143625A 2006-11-17 2007-11-16 Optical bonding composition for LED light source TW200835765A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US86628006P 2006-11-17 2006-11-17

Publications (1)

Publication Number Publication Date
TW200835765A true TW200835765A (en) 2008-09-01

Family

ID=39430051

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096143625A TW200835765A (en) 2006-11-17 2007-11-16 Optical bonding composition for LED light source

Country Status (7)

Country Link
US (1) US8026115B2 (enExample)
EP (1) EP2092576A1 (enExample)
JP (1) JP2010510671A (enExample)
KR (1) KR20090089431A (enExample)
CN (1) CN101548397B (enExample)
TW (1) TW200835765A (enExample)
WO (1) WO2008064070A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI463698B (zh) * 2010-12-13 2014-12-01 Toshiba Kk 半導體發光元件

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2440389C2 (ru) * 2006-01-18 2012-01-20 Спарксис Б.В. Новые мономерные и полимерные материалы
DE102008016487A1 (de) * 2008-03-31 2009-10-01 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
DE102010024545B4 (de) 2010-06-22 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
KR20120071960A (ko) 2010-12-23 2012-07-03 삼성모바일디스플레이주식회사 광학 접촉 결합을 이용한 금속 및 글라스 접합 방법, 이를 이용한 표시 장치의 제조 방법, 및 상기 제조 방법에 의해 만들어진 표시 장치
KR101293791B1 (ko) 2011-05-16 2013-08-06 제일모직주식회사 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용한 반도체 소자
KR101644051B1 (ko) * 2011-05-20 2016-08-01 삼성전자 주식회사 광전자 소자 및 적층 구조
US10043942B2 (en) * 2013-10-17 2018-08-07 Luminus Devices, Inc. Vertical multi-junction light emitting diode
EP2953176A1 (de) * 2014-06-02 2015-12-09 Swarovski Energy GmbH Beleuchtungsvorrichtung
CN104531052A (zh) * 2015-01-06 2015-04-22 段志春 一种纳米锆铌硅酮密封胶及其制作方法
JP6668608B2 (ja) * 2015-04-27 2020-03-18 日亜化学工業株式会社 発光装置の製造方法
KR102359811B1 (ko) * 2016-05-12 2022-02-09 루미리즈 홀딩 비.브이. 시준하는 온-다이 광학계
US10466404B2 (en) 2016-05-12 2019-11-05 Lumileds Llc Collimating on-die optic
US10290779B2 (en) * 2016-12-15 2019-05-14 Panasonic Intellectual Property Management Co., Ltd. Light emitting element
CN108864952A (zh) * 2018-04-26 2018-11-23 华中光电技术研究所(中国船舶重工集团有限公司第七七研究所) 光学玻璃零件粘合胶及粘接技术
JPWO2020175396A1 (enExample) * 2019-02-28 2020-09-03
WO2020211091A1 (en) * 2019-04-19 2020-10-22 Materion Precision Optics (Shanghai) Limited High temperature resistant reflective layer for wavelength conversion devices
KR102269020B1 (ko) * 2019-12-13 2021-06-25 한국전자기술연구원 Led 실장형 디스플레이 및 그의 제조 방법
JP7011195B2 (ja) * 2020-02-27 2022-01-26 日亜化学工業株式会社 発光装置
CN114368947B (zh) * 2022-01-11 2023-07-25 澳门大学 一种可用于门板的纳米泡沫玻璃微珠混凝土及其制备方法

Family Cites Families (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69715504T2 (de) * 1996-04-26 2003-06-05 Dow Corning Toray Silicone Co. Ltd., Ichihara Elektrisch leitfähige Silikonkautschukzusammensetzung und ihre Anwendung zur Herstellung von Halbleiteranordnungen
JP3950493B2 (ja) * 1996-04-26 2007-08-01 東レ・ダウコーニング株式会社 導電性シリコーンゴム組成物、半導体装置の製造方法およびその半導体装置
WO1997043117A1 (en) * 1996-05-16 1997-11-20 Lockheed Martin Energy Systems, Inc. Low temperature material bonding technique
US5777433A (en) * 1996-07-11 1998-07-07 Hewlett-Packard Company High refractive index package material and a light emitting device encapsulated with such material
US6548176B1 (en) * 1997-04-03 2003-04-15 The Board Of Trustees Of The Leland Stanford Junior University Hydroxide-catalyzed bonding
US6784463B2 (en) * 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
US6340824B1 (en) * 1997-09-01 2002-01-22 Kabushiki Kaisha Toshiba Semiconductor light emitting device including a fluorescent material
US6501091B1 (en) * 1998-04-01 2002-12-31 Massachusetts Institute Of Technology Quantum dot white and colored light emitting diodes
US6291839B1 (en) * 1998-09-11 2001-09-18 Lulileds Lighting, U.S. Llc Light emitting device having a finely-patterned reflective contact
US6307218B1 (en) * 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices
US6455100B1 (en) * 1999-04-13 2002-09-24 Elisha Technologies Co Llc Coating compositions for electronic components and other metal surfaces, and methods for making and using the compositions
US6376590B2 (en) * 1999-10-28 2002-04-23 3M Innovative Properties Company Zirconia sol, process of making and composite material
JP2001139894A (ja) 1999-11-15 2001-05-22 Dow Corning Toray Silicone Co Ltd シリコーン系接着性シート、および半導体装置
US7053419B1 (en) * 2000-09-12 2006-05-30 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
US7064355B2 (en) * 2000-09-12 2006-06-20 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
TWI250190B (en) * 2001-10-03 2006-03-01 Dow Corning Toray Silicone Adhesive sheet of cross-linked silicone, method of manufacturing thereof, and device
US6836602B2 (en) * 2001-10-26 2004-12-28 Corning Incorporated Direct bonding of optical components
US6734465B1 (en) * 2001-11-19 2004-05-11 Nanocrystals Technology Lp Nanocrystalline based phosphors and photonic structures for solid state lighting
US6791120B2 (en) * 2002-03-26 2004-09-14 Sanyo Electric Co., Ltd. Nitride-based semiconductor device and method of fabricating the same
KR20020035819A (ko) 2002-04-25 2002-05-15 주식회사 포스기술 방수, 방진 구조를 가진 방열판 겸용 반사면을 구비한발광소자 매트릭스 모듈 및 그 형성방법
US6679621B2 (en) * 2002-06-24 2004-01-20 Lumileds Lighting U.S., Llc Side emitting LED and lens
GB0217900D0 (en) * 2002-08-02 2002-09-11 Qinetiq Ltd Optoelectronic devices
TW200406829A (en) * 2002-09-17 2004-05-01 Adv Lcd Tech Dev Ct Co Ltd Interconnect, interconnect forming method, thin film transistor, and display device
US7118438B2 (en) * 2003-01-27 2006-10-10 3M Innovative Properties Company Methods of making phosphor based light sources having an interference reflector
CA2517009A1 (en) * 2003-02-26 2004-09-10 Cree, Inc. White light source using emitting diode and phosphor and method of fabrication
TW200427111A (en) * 2003-03-12 2004-12-01 Shinetsu Chemical Co Material for coating/protecting light-emitting semiconductor and the light-emitting semiconductor device
US7078735B2 (en) * 2003-03-27 2006-07-18 Sanyo Electric Co., Ltd. Light-emitting device and illuminator
KR100550491B1 (ko) * 2003-05-06 2006-02-09 스미토모덴키고교가부시키가이샤 질화물 반도체 기판 및 질화물 반도체 기판의 가공 방법
JP4645071B2 (ja) * 2003-06-20 2011-03-09 日亜化学工業株式会社 パッケージ成型体およびそれを用いた半導体装置
DE102004034166B4 (de) * 2003-07-17 2015-08-20 Toyoda Gosei Co., Ltd. Lichtemittierende Vorrichtung
US7009213B2 (en) * 2003-07-31 2006-03-07 Lumileds Lighting U.S., Llc Light emitting devices with improved light extraction efficiency
US6942360B2 (en) * 2003-10-01 2005-09-13 Enertron, Inc. Methods and apparatus for an LED light engine
JP4332407B2 (ja) * 2003-10-31 2009-09-16 シャープ株式会社 半導体発光素子及びその製造方法
KR100592327B1 (ko) 2003-12-19 2006-06-21 주식회사 코스텍시스 전자기기용 발광다이오드 모듈
JP4231418B2 (ja) * 2004-01-07 2009-02-25 株式会社小糸製作所 発光モジュール及び車両用灯具
KR100574628B1 (ko) 2004-03-10 2006-04-28 서울반도체 주식회사 색 필름을 이용한 발광 다이오드 모듈
EP1738107A4 (en) * 2004-04-23 2008-12-31 Light Prescriptions Innovators OPTICAL DISTRIBUTOR FOR LIGHT-EMITTING DIODES
JP3822213B2 (ja) * 2004-06-03 2006-09-13 日東電工株式会社 剥離力調整方法、光学部材用粘着剤層およびその製造方法、ならびに粘着剤付光学部材
US7070300B2 (en) * 2004-06-04 2006-07-04 Philips Lumileds Lighting Company, Llc Remote wavelength conversion in an illumination device
TWI374552B (en) * 2004-07-27 2012-10-11 Cree Inc Ultra-thin ohmic contacts for p-type nitride light emitting devices and methods of forming
JP2006066449A (ja) * 2004-08-24 2006-03-09 Toshiba Corp 半導体発光素子
US7404756B2 (en) * 2004-10-29 2008-07-29 3M Innovative Properties Company Process for manufacturing optical and semiconductor elements
US7330319B2 (en) * 2004-10-29 2008-02-12 3M Innovative Properties Company High brightness LED package with multiple optical elements
US20060091411A1 (en) * 2004-10-29 2006-05-04 Ouderkirk Andrew J High brightness LED package
US7329982B2 (en) * 2004-10-29 2008-02-12 3M Innovative Properties Company LED package with non-bonded optical element
US7304425B2 (en) * 2004-10-29 2007-12-04 3M Innovative Properties Company High brightness LED package with compound optical element(s)
US20060091412A1 (en) * 2004-10-29 2006-05-04 Wheatley John A Polarized LED
US7192795B2 (en) * 2004-11-18 2007-03-20 3M Innovative Properties Company Method of making light emitting device with silicon-containing encapsulant
US20060186428A1 (en) * 2005-02-23 2006-08-24 Tan Kheng L Light emitting device with enhanced encapsulant adhesion using siloxane material and method for fabricating the device
US20060226429A1 (en) * 2005-04-08 2006-10-12 Sigalas Mihail M Method and apparatus for directional organic light emitting diodes
US7494519B2 (en) * 2005-07-28 2009-02-24 3M Innovative Properties Company Abrasive agglomerate polishing method
US7169031B1 (en) * 2005-07-28 2007-01-30 3M Innovative Properties Company Self-contained conditioning abrasive article
US7594845B2 (en) * 2005-10-20 2009-09-29 3M Innovative Properties Company Abrasive article and method of modifying the surface of a workpiece
US7573073B2 (en) * 2005-11-22 2009-08-11 3M Innovative Properties Company Arrays of light emitting articles and method of manufacturing same
US7285791B2 (en) * 2006-03-24 2007-10-23 Goldeneye, Inc. Wavelength conversion chip for use in solid-state lighting and method for making same
US20070257270A1 (en) * 2006-05-02 2007-11-08 3M Innovative Properties Company Led package with wedge-shaped optical element
US7525126B2 (en) 2006-05-02 2009-04-28 3M Innovative Properties Company LED package with converging optical element
US7423297B2 (en) * 2006-05-03 2008-09-09 3M Innovative Properties Company LED extractor composed of high index glass
US7525162B2 (en) * 2007-09-06 2009-04-28 International Business Machines Corporation Orientation-optimized PFETS in CMOS devices employing dual stress liners

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI463698B (zh) * 2010-12-13 2014-12-01 Toshiba Kk 半導體發光元件
US9287448B2 (en) 2010-12-13 2016-03-15 Kabushiki Kaisha Toshiba Semiconductor light emitting element
US9991418B2 (en) 2010-12-13 2018-06-05 Kabushiki Kaisha Toshiba Semiconductor light emitting element

Also Published As

Publication number Publication date
CN101548397A (zh) 2009-09-30
JP2010510671A (ja) 2010-04-02
US20100059776A1 (en) 2010-03-11
CN101548397B (zh) 2011-12-21
EP2092576A1 (en) 2009-08-26
WO2008064070A1 (en) 2008-05-29
KR20090089431A (ko) 2009-08-21
US8026115B2 (en) 2011-09-27

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