CN105914275A - 倒装发光二极管及其制作方法 - Google Patents
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Abstract
本发明为一种倒装发光二极管及其制作方法。本发明公开了一种表面可具有图形化透明基板的四元覆晶薄芯片制作方式,包括以下步骤:(1)提供一透明基板和一暂时基板,将所述透明基板与所述暂时基板进行粘接;(2)对所述透明基板进行研磨减薄;(3)提供发光外延叠层,具有相对的第一表面和第二表面,包含第一半导体层、有源层和第二半导体层;(4)分别在透明基板和发光外延叠层的第一表面上形成透明键合介质层,进行键合;(5)在所述发光外延叠层的第二表面上定义第一电极区和第二电极区,并制作第二电极和第二电极;(6)去除暂时基板。
Description
技术领域
本发明涉及半导体照明领域,具体的说是一种倒装薄膜发光二极管芯片及其制作方法。
背景技术
近几年,发光二极管(light emitting diode,简称LED)得到了广泛的应用,在各种显示系统、照明系统、汽车尾灯等领域起着越来越重要的作用。
自从金属有机化学外延生长技术成功开发后,铝镓铟磷 (AlGaInP) 系材料发展迅速被用来制作高功率高亮度红光及黄光LED。目前,四元系LED已发展出透明键合技术,即将半导体结构与透明基板键合,可制作于水平版结构之中,并以此可延伸出可搭配RGB应用之倒装结构,结构如图1所示。
然而,基板厚度较大时容易吸收光源,但芯片过薄又将造成芯片破片良率差,一般工艺结构中透明基板的厚度要求>80微米,且表面为抛光平面。因此,上述图1所示倒装四元发光二极管结构中,辐射光源易在基板中被材料吸收,并且出光面易反射回有源层结构内造成光被吸收而损失。
发明内容
本发明的目的在于:提出一种表面可具有图形化透明基板的四元覆晶薄芯片制作方式,针对以上问题提出可行的解决方案,增加作业的可行性并且大幅增加出光效率。
本发明解决上述问题的技术方案为:倒装发光二极管的制作方法,包括以下工艺步骤:(1)提供一透明基板和一暂时基板,将所述透明基板与所述暂时基板进行粘接;(2)对所述透明基板进行研磨减薄;(3)提供发光外延叠层,具有相对的第一表面和第二表面,包含第一半导体层、有源层和第二半导体层;(4)在发光外延叠层的第一表面上形成透明键合介质层,与所述透明基板进行键合;(5)在所述发光外延叠层的第二表面上定义第一电极区和第二电极区,并制作第二电极和第二电极;(6)去除暂时基板。
优选地,所述步骤(1)中还包含:图案化所述透明基板的第一主表面,然后将所述第一主表面作为结合面,与所述暂时基板粘接。
优选地,所述步骤(1)中采用可以耐高温并且稳定性佳的黏胶,将透明基板与暂时基板键合,暂时基板可以选用玻璃、陶瓷基板或蓝石基板。
优选地,所述步骤(2)中减薄后的透明基板的厚度小于80um。
优选地,所述步骤(4)中形成的透明键合介质层的材料为氧化硅层、氮化硅层、三氧化二铝层中的一种或两种以上组合,例如:Al2O3/SiO2、SiNX/SiO2、SiNX/Al2O3/SiO2等。
在一些实施例中,所述步骤(3)中还包括图形化所述发光外延叠层的第一表面,所述步骤(4)中在所述发光外延叠层的第一表面上形成透明键合介质层后,采用化学机械抛光技术使所述透明键合介质层表面平坦化,其粗糙值要求至Ra<1nm。
在一些实施例中,所述步骤(4)包含:在所述发光外延叠层的第一表面上形成一透明介质层,其上表面具有网格状或阵列状凹陷区域;在所述透明介质层上沉积图形化透明键合介质层,其填满所述高透明介质层上的凹陷区域,并且上表面与所述透明介质层上表面处于同一平面。
进一步地,所述步骤4)中,在所述透明介质层上沉积透明键合介质层,对其表面精细抛光,直至露出透明介质层,从而所述透明键合介质层填满透明介质层的凹陷区域,并且两者上表面处以同一平面并抛光。
在一些实施例中,所述步骤5)还包括:在所述露出的发光外延叠层的第二表面上设置金字塔形凹陷阵列,每个金字塔凹陷设置在所述透明键合介质层的垂直阴影区域,以反射所述透明键合介质层垂直阴影区域的光线,使其偏离该阴影区域,减少透明键合介质层向芯片内部的反光。
同时本发明提供一种倒装LED芯片结构,采用上述任一种制作方法制得。
本发明至少具备以下有益效果:(一)图形化基板表面可改变全反射光的入射角,避免光反射回半导体结构再被吸收,增益光取出效率;(二)透明基板薄片可以达到<80um厚度,作业良率更稳定并且避免光被材料所吸收。
本发明的其它特征和优点将在随后的说明书中阐述,并且,部分地从说明书中变得显而易见,或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
附图用来提供对本发明的进一步理解,并且构成说明书的一部分,与本发明的实施例一起用于解释本发明,并不构成对本发明的限制。此外,附图数据是描述概要,不是按比例绘制。
图1示意了现有的一种倒装发光二极管芯片。
图2示意了根据本发明实施的一种倒装发光二极管的制作流程图。
图3~10示意了实施例1中的倒装发光二极管的制作过程示意图。
图11显示了实施例1的倒装发光二极管提高光提取效率的光路分析图。
图12显示了实施例2的倒装发光二极管芯片。
图13显示了实施例3的倒装发光二极管芯片,其具有图形化透明键合层。
图14显示了图13所示倒装发光二极管之图形化透明键合层的俯视图。
图15示意了实施例4的倒装发光二极管。
图中:
110、210、210:透明衬底;120、220:透明键合层;130、230:p型窗口层;140、240:P型半导体层;150、250:有源层;160、260:n型半导体层;170、270:p电极;180、280:n电极;200:生长衬底;300:暂时基板;310:粘接层。
具体实施方式
以下将结合附图及实施例来详细说明本发明的实施方式,借此对本发明如何应用技术手段来解决技术问题,并达成技术效果的实现过程能充分理解并据以实施。需要说明的是,只要不构成冲突,本发明中的各个实施例以及各实施例中的各个特征可以相互结合,所形成的技术方案均在本发明的保护范围之内。
在本发明中,第一半导体层和第二半导体层系互为反型的半导体材料,诸如第一半导体层为n型半导体时,则第二半导体层为p型半导体,如果第一半导体层为p型半导体时,则第二半导体层为n型半导体。
下面各实施例公开一种表面具有图形化透明基板的四元覆晶薄芯片制作方式,首先将透明基板与一暂时基板结合并作减薄处理,接着采用透明键合技术与外延片粘接,移除生长衬底并制作电极,最后移徐暂时基板,从而获得薄膜型倒装发二极管,其透明基板薄片的厚度可可以达到80微米以下,作业良率更稳定并且避免光被材料所吸收。
图2显示了根据本发明实施的一种倒装发光二极管的制作流程图,其主要包括步骤S100~S600,下面结合图3~10对其进行详细说明。
首先,提供透明衬底210和暂时基板300,图形化透明基板210的第一个主表面,通过粘接层310将透明基板与暂时基板300进行键合。其中透明基板的键合面为图形化的表面,材料可以为蓝宝石、氮化铝或玻璃,图形化透明基板可有不同制造方式,例如图形化蓝宝石衬底(PSS)技术;暂时基板300可以选用玻璃、陶瓷基板;粘接层310采用可以耐高温并且稳定性佳的黏胶,例如BCB胶等,如图3和4所示。
接着,针对图形化透明基板210进行研磨减薄,可磨薄至80微米以下,因有暂时基板300支撑,磨薄透明基板不易造成破片,并可进行后续制程。如图5所示,减薄后的透明基板200的较佳厚度为40~60微米,在本实施例中,取50微米。
接着,另取MOCVD长晶之四元外延片,其结构如6所示,采用常规结构即可,其一般包括生长衬底200、n型半导体层260、有源层250、p型半导体层240和p型窗口层230。
接着,在外延片的p型窗口层230上沉积透明键合层220,与减薄后的透明基板210进行键合,如图7所示。其中,透明键合层220材料为氧化硅层、氮化硅层、三氧化二铝层中的一种或两种以上组合,例如:Al2O3/SiO2、SiNX/SiO2、SiNX/Al2O3/SiO2等。在本实施例中选用Al2O3/SiO2,采用高温高压进行键合,其中高温指的是360℃,高压为150MPa。
接着,移除外延片的生长衬底200,裸露出n型半导体层260的表面,如图8所示。在本实施例中,采用湿法蚀刻移除生长衬底,其中衬底去除剂是由NH4OH 与H2O2 配制而成。
接着,制作p电极270和n电极280,如图9所示。具体为:在n型半导体层的表面上定义p电极区和n电极区,蚀刻p电极区的n型半导体层260及有源层250,露出p型半导体层240,在露出的表面上制作p电极270,作为芯片正极,其材料为金铍合金,在n型半导体层260的n电极区制作n电极280,作为芯片负极,同时还作为反射镜,本实施例中,其材料为银。
接着,以适当的去胶液和适合条件下将黏胶去除,连带着会将暂时基板一起剥离,露出图形化的透明基板表面,如图10所示。此时不须再经研磨作业,劈裂后即可应用于倒装芯片的封装结构之上。
图11显示了采用上述方法获得的倒装发光二极管提高光提取效率的光路分析图,图形化基板表面可改变全反射光的入射角,避免光反射回半导体结构再被吸收,增益光取出效率;同时透明基板薄片可以达到<80um厚度,作业良率更稳定并且避免光被材料所吸收。
图12显示了本发明的第二个实施例的倒装发光二极管,其与实施例1的区别在于:将外延片的p型窗口层的表面进行粗化并将其作为键合面230a,在键合面上沉积透明键合层220,然后将透明键合层与透明基板进行键合。具体的,首先采用湿法蚀刻p型窗口层230的表面,形成粗化表面230a,接着在该粗化表面230a上沉积透明键合层220,接着对透明键合层220的表面进行平坦化作业,表面的平坦度粗糙值要求至Ra<1nm,得到平坦化的LED 片;其中平坦化作业以化学机械研磨方式,搭配ESR-320
抛光液以及SUBA600SiO2 抛光垫,抛光至所需的平坦度。
图13显示了本发明的第三个实施例的倒装发光二极管,其与实施例二的区别在于:具有图形化透明键合介质层220,由高折射率透明介质层221和图形化透明键合层222构成。其中,高折射率透明介质层221位于p型窗口层230的表面上,其上表面形成有网格状或阵列状凹陷区域,图形化透明键合层222填满高折射率透明介质层221上的凹陷区域,并且其上表面与透明介质层221上表面处于同一平面。具体的,先在p型窗口层230表面上沉积高折射率透明介质层221,通过光刻技术在透明介质层221上表面定义出圆形阵列,圆形以内的区域被蚀刻,形成阵列状凹陷区域,如图14所示;接着,在透明介质层221上沉积键合层222,其厚度为1~2微米,之后通过精细抛光技术对键合介质层222表面进行抛光,直至露出透明介质层221。本实施例中,高折射率透明介质层221的材料为Al2O3,厚度为3微米;在圆形阵列中,圆直径为3~6微米,圆心间距为5~10微米,蚀刻深度为1~2微米;键合层222的材料为SiO2。
在本实施例中,半导体表面的出光介质改为高折射率透明材料,大大增加了半导体至透明基板的光的提取效率。而进入高折射率透明介质的光将分为两部分,一部分如光线1,入射至键合层222,在其下表面发生反射和折射、或全反射,这部分光与原有键合结构类似;一部分光经高折射率透明介质直接进入透明基板,增加了透明基板内的进光量,也就增加了光被提取的概率,如光线2,透明键合层222还起到反射镜的作用,部分地反射来自透明基板上表面反射回芯片内部的光线,避免其进入半导体层而被吸收。综上所述,本实施例提供的具有图形化透明键合层的倒装发光二极管有效地提高了光的提取效率,同时又确保了键合强度及良率。
图15显示了本发明的第四个实施例的倒装发光二极管,其与实施例三的区别在于:n型半导体层260下表面被蚀刻,形成金字塔形凹陷阵列261,每个金字塔形凹陷对应位于上述图形化键合层222的垂直阴影区域,其底面对角线长度小于或等于上述图形化键合层222的圆形凹陷底面的直径,以反射图形化键合层222垂直阴影区域的光线,使其偏离该阴影区域,减少图形化键合层222向芯片内部的反光。
很明显地,本发明的说明不应理解为仅仅限制在上述实施例,而是包括利用本发明构思的所有可能的实施方式。
Claims (10)
1.倒装发光二极管的制作方法,包括以下步骤:
(1)提供一透明基板和一暂时基板,将所述透明基板与所述暂时基板进行粘接;
(2)对所述透明基板进行研磨减薄;
(3)提供发光外延叠层,具有相对的第一表面和第二表面,包含第一半导体层、有源层和第二半导体层;
(4)在发光外延叠层的第一表面上形成透明键合介质层,与所述透明基板进行键合;
(5)在所述发光外延叠层的第二表面上定义第一电极区和第二电极区,并制作第二电极和第二电极;
(6)去除暂时基板。
2.根据权利要求1所述的倒装发光二极管的制作方法,其特征在于:所述步骤(1)中还包含:图案化所述透明基板的第一主表面,然后将所述第一主表面作为结合面,与所述暂时基板粘接。
3.根据权利要求1所述的倒装发光二极管的制作方法,其特征在于:所述步骤(2)中减薄后的透明基板的厚度小于80um。
4.根据权利要求1所述的倒装发光二极管的制作方法,其特征在于:所述步骤(3)中还包括图形化所述发光外延叠层的第一表面。
5.根据权利要4所述的倒装发光二极管的制作方法,其特征在于:所述步骤(4)中在所述发光外延叠层的第一表面上形成透明键合介质层后,采用化学机械抛光技术使所述透明键合介质层表面平坦化。
6.根据权利要求1所述的倒装发光二极管的制作方法,其特征在于:所述步骤(4)中形成的透明键合介质层的材料为氧化硅层、氮化硅层、三氧化二铝层中的一种或两种以上组合。
7.根据权利要求1所述的倒装发光二极管的制作方法,其特征在于:所述步骤(4)包含:
在所述发光外延叠层的第一表面上形成一透明介质层,其上表面具有网格状或阵列状凹陷区域;
在所述透明介质层上沉积图形化透明键合介质层,其填满所述高透明介质层上的凹陷区域,并且上表面与所述透明介质层上表面处于同一平面。
8.根据权利要求7所述的倒装发光二极管的制作方法,其特征在于:所述步骤4)中,在所述透明介质层上沉积透明键合介质层,对其表面精细抛光,直至露出透明介质层,从而所述透明键合介质层填满透明介质层的凹陷区域,并且两者上表面处以同一平面并抛光。
9.根据权利要求7所述的倒装发光二极管的制作方法,其特征在于:所述步骤5)还包括:在所述露出的发光外延叠层的第二表面设置金字塔形凹陷阵列,每个金字塔凹陷设置在所述透明键合介质层的垂直阴影区域,以反射所述透明键合介质层垂直阴影区域的光线,使其偏离该阴影区域,减少透明键合介质层向芯片内部的反光。
10.倒装发光二极管,采用上述权利要求1~9中的任一项制作方法制得。
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US20190140208A1 (en) | 2019-05-09 |
US20230413599A1 (en) | 2023-12-21 |
US20210288285A1 (en) | 2021-09-16 |
WO2017219817A1 (zh) | 2017-12-28 |
US11056669B2 (en) | 2021-07-06 |
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