TW200807751A - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor device Download PDFInfo
- Publication number
- TW200807751A TW200807751A TW095147438A TW95147438A TW200807751A TW 200807751 A TW200807751 A TW 200807751A TW 095147438 A TW095147438 A TW 095147438A TW 95147438 A TW95147438 A TW 95147438A TW 200807751 A TW200807751 A TW 200807751A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- semiconductor device
- trench
- manufacturing
- present
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 94
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 125
- 239000000463 material Substances 0.000 claims abstract description 22
- 230000003287 optical effect Effects 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000011521 glass Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0067—Packages or encapsulation for controlling the passage of optical signals through the package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dicing (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006001802A JP2007184426A (ja) | 2006-01-06 | 2006-01-06 | 半導体装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200807751A true TW200807751A (en) | 2008-02-01 |
Family
ID=37876964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095147438A TW200807751A (en) | 2006-01-06 | 2006-12-18 | Method for manufacturing semiconductor device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7494898B2 (enExample) |
| EP (1) | EP1806782B1 (enExample) |
| JP (1) | JP2007184426A (enExample) |
| KR (1) | KR20070074460A (enExample) |
| TW (1) | TW200807751A (enExample) |
Families Citing this family (37)
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| JP2007184426A (ja) * | 2006-01-06 | 2007-07-19 | Shinko Electric Ind Co Ltd | 半導体装置の製造方法 |
| US9780268B2 (en) | 2006-04-04 | 2017-10-03 | Cree, Inc. | Submount based surface mount device (SMD) light emitter components and methods |
| TW200843135A (en) * | 2007-04-23 | 2008-11-01 | Augux Co Ltd | Method of packaging light emitting diode with high heat-dissipating efficiency and the structure thereof |
| JP4809308B2 (ja) * | 2007-09-21 | 2011-11-09 | 新光電気工業株式会社 | 基板の製造方法 |
| JP5248084B2 (ja) * | 2007-10-26 | 2013-07-31 | 新光電気工業株式会社 | シリコンインターポーザとこれを用いた半導体装置用パッケージおよび半導体装置 |
| DE102008014927A1 (de) | 2008-02-22 | 2009-08-27 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Mehrzahl von strahlungsemittierenden Bauelementen und strahlungsemittierendes Bauelement |
| JP5108579B2 (ja) * | 2008-03-21 | 2012-12-26 | シチズンファインテックミヨタ株式会社 | 電子部品パッケージの製造方法および電子部品パッケージ |
| KR100992778B1 (ko) | 2008-05-23 | 2010-11-05 | 엘지이노텍 주식회사 | 발광소자 패키지 및 그 제조방법 |
| US20100176507A1 (en) * | 2009-01-14 | 2010-07-15 | Hymite A/S | Semiconductor-based submount with electrically conductive feed-throughs |
| KR101064026B1 (ko) * | 2009-02-17 | 2011-09-08 | 엘지이노텍 주식회사 | 발광 디바이스 패키지 및 그 제조방법 |
| US8609512B2 (en) * | 2009-03-27 | 2013-12-17 | Electro Scientific Industries, Inc. | Method for laser singulation of chip scale packages on glass substrates |
| US7892950B2 (en) * | 2009-04-29 | 2011-02-22 | Freescale Semiconductor, Inc. | Methodology for processing a panel during semiconductor device fabrication |
| JP2011040621A (ja) * | 2009-08-12 | 2011-02-24 | Renesas Electronics Corp | 半導体装置の設計方法および半導体装置の製造方法 |
| JP2011222623A (ja) * | 2010-04-06 | 2011-11-04 | Disco Abrasive Syst Ltd | 光デバイスウエーハの加工方法 |
| JP2012186309A (ja) * | 2011-03-04 | 2012-09-27 | Omron Corp | ウエハレベルパッケージの製造方法、及びウエハレベルパッケージ |
| US10134961B2 (en) | 2012-03-30 | 2018-11-20 | Cree, Inc. | Submount based surface mount device (SMD) light emitter components and methods |
| US10222032B2 (en) | 2012-03-30 | 2019-03-05 | Cree, Inc. | Light emitter components and methods having improved electrical contacts |
| US9735198B2 (en) * | 2012-03-30 | 2017-08-15 | Cree, Inc. | Substrate based light emitter devices, components, and related methods |
| KR101524044B1 (ko) * | 2013-11-21 | 2015-06-02 | 주식회사 루멘스 | 발광 소자 패키지, 백라이트 유닛 및 조명 장치 |
| WO2015076591A1 (ko) | 2013-11-21 | 2015-05-28 | 주식회사 루멘스 | 발광 소자 패키지, 백라이트 유닛, 조명 장치 및 발광 소자 패키지의 제작 방법 |
| KR101524046B1 (ko) * | 2013-11-21 | 2015-06-01 | 주식회사 루멘스 | 발광 소자 패키지, 백라이트 유닛, 조명 장치 및 발광 소자 패키지의 제작 방법 |
| CN104752584A (zh) * | 2013-12-25 | 2015-07-01 | 苏州矩阵光电有限公司 | 一种led封装结构 |
| US9196592B2 (en) | 2014-01-10 | 2015-11-24 | International Business Machines Corporation | Methods of managing metal density in dicing channel and related integrated circuit structures |
| CN103822143A (zh) * | 2014-02-18 | 2014-05-28 | 江苏新广联绿色照明工程有限公司 | 硅基led路灯光源模块 |
| CN103887238A (zh) * | 2014-04-01 | 2014-06-25 | 惠州硕贝德无线科技股份有限公司 | 一种完成bga封装之后的晶圆的切割分粒方法 |
| US9691949B2 (en) | 2014-05-30 | 2017-06-27 | Cree, Inc. | Submount based light emitter components and methods |
| CN107438899B (zh) | 2015-03-31 | 2021-04-30 | 科锐Led公司 | 具有包封的发光二极管和方法 |
| US12364074B2 (en) | 2015-03-31 | 2025-07-15 | Creeled, Inc. | Light emitting diodes and methods |
| JP2018060988A (ja) * | 2016-10-04 | 2018-04-12 | 日本特殊陶業株式会社 | 蓋部材、発光装置、およびこれらの製造方法 |
| JP6866664B2 (ja) * | 2017-02-06 | 2021-04-28 | 日亜化学工業株式会社 | 発光装置の製造方法 |
| US10347806B2 (en) * | 2017-04-12 | 2019-07-09 | Luminus, Inc. | Packaged UV-LED device with anodic bonded silica lens and no UV-degradable adhesive |
| US10672957B2 (en) | 2017-07-19 | 2020-06-02 | Cree, Inc. | LED apparatuses and methods for high lumen output density |
| EP3439050B1 (en) * | 2017-08-02 | 2020-10-28 | Lg Innotek Co. Ltd | Light emitting device package |
| US10957736B2 (en) | 2018-03-12 | 2021-03-23 | Cree, Inc. | Light emitting diode (LED) components and methods |
| KR102684757B1 (ko) | 2019-08-22 | 2024-07-16 | 삼성디스플레이 주식회사 | 표시 장치 |
| DE102020107409B4 (de) * | 2020-03-18 | 2023-11-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Gehäuse für ein optoelektronisches halbleiterbauelement und optoelektronisches halbleiterbauelement |
| DE102024202118A1 (de) * | 2024-03-07 | 2025-09-11 | Robert Bosch Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung und Vereinzelung von MEMS-Bauelementen |
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| JPH0611071B2 (ja) * | 1983-09-07 | 1994-02-09 | 三洋電機株式会社 | 化合物半導体基板の分割方法 |
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| US6573028B1 (en) * | 1998-02-10 | 2003-06-03 | Nissha Printing Co., Ltd. | Base sheet for semiconductor module, method for manufacturing base sheet for semiconductor module, and semiconductor module |
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| US6580054B1 (en) * | 2002-06-10 | 2003-06-17 | New Wave Research | Scribing sapphire substrates with a solid state UV laser |
| JP4271904B2 (ja) * | 2002-06-24 | 2009-06-03 | 富士フイルム株式会社 | 固体撮像装置の製造方法 |
| US6995032B2 (en) * | 2002-07-19 | 2006-02-07 | Cree, Inc. | Trench cut light emitting diodes and methods of fabricating same |
| US6982470B2 (en) * | 2002-11-27 | 2006-01-03 | Seiko Epson Corporation | Semiconductor device, method of manufacturing the same, cover for semiconductor device, and electronic equipment |
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| US7847411B2 (en) * | 2003-11-07 | 2010-12-07 | Shinko Electric Industries Co., Ltd. | Electronic device and method of manufacturing the same |
| US7008861B2 (en) * | 2003-12-11 | 2006-03-07 | Cree, Inc. | Semiconductor substrate assemblies and methods for preparing and dicing the same |
| JP2005260154A (ja) * | 2004-03-15 | 2005-09-22 | Tokyo Seimitsu Co Ltd | チップ製造方法 |
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| US7087463B2 (en) * | 2004-08-04 | 2006-08-08 | Gelcore, Llc | Laser separation of encapsulated submount |
| JP2006086516A (ja) * | 2004-08-20 | 2006-03-30 | Showa Denko Kk | 半導体発光素子の製造方法 |
| WO2006038713A1 (en) * | 2004-10-07 | 2006-04-13 | Showa Denko K.K. | Production method for semiconductor device |
| US7378288B2 (en) * | 2005-01-11 | 2008-05-27 | Semileds Corporation | Systems and methods for producing light emitting diode array |
| US7306975B2 (en) * | 2005-07-01 | 2007-12-11 | Texas Instruments Incorporated | Semiconductor wafer cutting blade and method |
| JP2007184426A (ja) * | 2006-01-06 | 2007-07-19 | Shinko Electric Ind Co Ltd | 半導体装置の製造方法 |
-
2006
- 2006-01-06 JP JP2006001802A patent/JP2007184426A/ja active Pending
- 2006-12-14 EP EP06256362A patent/EP1806782B1/en not_active Not-in-force
- 2006-12-18 TW TW095147438A patent/TW200807751A/zh unknown
- 2006-12-19 US US11/641,336 patent/US7494898B2/en active Active
- 2006-12-20 KR KR1020060131037A patent/KR20070074460A/ko not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| EP1806782A2 (en) | 2007-07-11 |
| JP2007184426A (ja) | 2007-07-19 |
| EP1806782B1 (en) | 2011-08-10 |
| US20070161211A1 (en) | 2007-07-12 |
| EP1806782A3 (en) | 2010-03-03 |
| KR20070074460A (ko) | 2007-07-12 |
| US7494898B2 (en) | 2009-02-24 |
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