KR20070074460A - 반도체 장치의 제조 방법 - Google Patents

반도체 장치의 제조 방법 Download PDF

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Publication number
KR20070074460A
KR20070074460A KR1020060131037A KR20060131037A KR20070074460A KR 20070074460 A KR20070074460 A KR 20070074460A KR 1020060131037 A KR1020060131037 A KR 1020060131037A KR 20060131037 A KR20060131037 A KR 20060131037A KR 20070074460 A KR20070074460 A KR 20070074460A
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KR
South Korea
Prior art keywords
substrate
semiconductor device
manufacturing
groove
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020060131037A
Other languages
English (en)
Korean (ko)
Inventor
마사히로 스노하라
유이치 다구치
아키노리 시라이시
나오유키 고이즈미
게이 무라야마
히데아키 사카구치
미츠토시 히가시
Original Assignee
신꼬오덴기 고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 신꼬오덴기 고교 가부시키가이샤 filed Critical 신꼬오덴기 고교 가부시키가이샤
Publication of KR20070074460A publication Critical patent/KR20070074460A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0067—Packages or encapsulation for controlling the passage of optical signals through the package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dicing (AREA)
  • Led Device Packages (AREA)
KR1020060131037A 2006-01-06 2006-12-20 반도체 장치의 제조 방법 Withdrawn KR20070074460A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00001802 2006-01-06
JP2006001802A JP2007184426A (ja) 2006-01-06 2006-01-06 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
KR20070074460A true KR20070074460A (ko) 2007-07-12

Family

ID=37876964

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060131037A Withdrawn KR20070074460A (ko) 2006-01-06 2006-12-20 반도체 장치의 제조 방법

Country Status (5)

Country Link
US (1) US7494898B2 (enExample)
EP (1) EP1806782B1 (enExample)
JP (1) JP2007184426A (enExample)
KR (1) KR20070074460A (enExample)
TW (1) TW200807751A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8648365B2 (en) 2009-02-17 2014-02-11 Lg Innotek Co., Ltd. Lighting emitting device package

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007184426A (ja) * 2006-01-06 2007-07-19 Shinko Electric Ind Co Ltd 半導体装置の製造方法
US9780268B2 (en) 2006-04-04 2017-10-03 Cree, Inc. Submount based surface mount device (SMD) light emitter components and methods
TW200843135A (en) * 2007-04-23 2008-11-01 Augux Co Ltd Method of packaging light emitting diode with high heat-dissipating efficiency and the structure thereof
JP4809308B2 (ja) * 2007-09-21 2011-11-09 新光電気工業株式会社 基板の製造方法
JP5248084B2 (ja) * 2007-10-26 2013-07-31 新光電気工業株式会社 シリコンインターポーザとこれを用いた半導体装置用パッケージおよび半導体装置
DE102008014927A1 (de) 2008-02-22 2009-08-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl von strahlungsemittierenden Bauelementen und strahlungsemittierendes Bauelement
JP5108579B2 (ja) * 2008-03-21 2012-12-26 シチズンファインテックミヨタ株式会社 電子部品パッケージの製造方法および電子部品パッケージ
KR100992778B1 (ko) 2008-05-23 2010-11-05 엘지이노텍 주식회사 발광소자 패키지 및 그 제조방법
US20100176507A1 (en) * 2009-01-14 2010-07-15 Hymite A/S Semiconductor-based submount with electrically conductive feed-throughs
US8609512B2 (en) * 2009-03-27 2013-12-17 Electro Scientific Industries, Inc. Method for laser singulation of chip scale packages on glass substrates
US7892950B2 (en) * 2009-04-29 2011-02-22 Freescale Semiconductor, Inc. Methodology for processing a panel during semiconductor device fabrication
JP2011040621A (ja) * 2009-08-12 2011-02-24 Renesas Electronics Corp 半導体装置の設計方法および半導体装置の製造方法
JP2011222623A (ja) * 2010-04-06 2011-11-04 Disco Abrasive Syst Ltd 光デバイスウエーハの加工方法
JP2012186309A (ja) * 2011-03-04 2012-09-27 Omron Corp ウエハレベルパッケージの製造方法、及びウエハレベルパッケージ
US10222032B2 (en) 2012-03-30 2019-03-05 Cree, Inc. Light emitter components and methods having improved electrical contacts
US9735198B2 (en) * 2012-03-30 2017-08-15 Cree, Inc. Substrate based light emitter devices, components, and related methods
US10134961B2 (en) 2012-03-30 2018-11-20 Cree, Inc. Submount based surface mount device (SMD) light emitter components and methods
KR101524046B1 (ko) * 2013-11-21 2015-06-01 주식회사 루멘스 발광 소자 패키지, 백라이트 유닛, 조명 장치 및 발광 소자 패키지의 제작 방법
KR101524044B1 (ko) * 2013-11-21 2015-06-02 주식회사 루멘스 발광 소자 패키지, 백라이트 유닛 및 조명 장치
US9831407B2 (en) 2013-11-21 2017-11-28 Lumens Co., Ltd. Light emitting device package, backlight unit, illumination apparatus, and method of manufacturing light emitting device package
CN104752584A (zh) * 2013-12-25 2015-07-01 苏州矩阵光电有限公司 一种led封装结构
US9196592B2 (en) 2014-01-10 2015-11-24 International Business Machines Corporation Methods of managing metal density in dicing channel and related integrated circuit structures
CN103822143A (zh) * 2014-02-18 2014-05-28 江苏新广联绿色照明工程有限公司 硅基led路灯光源模块
CN103887238A (zh) * 2014-04-01 2014-06-25 惠州硕贝德无线科技股份有限公司 一种完成bga封装之后的晶圆的切割分粒方法
US9691949B2 (en) * 2014-05-30 2017-06-27 Cree, Inc. Submount based light emitter components and methods
US12364074B2 (en) 2015-03-31 2025-07-15 Creeled, Inc. Light emitting diodes and methods
WO2016161161A1 (en) 2015-03-31 2016-10-06 Cree, Inc. Light emitting diodes and methods with encapsulation
JP2018060988A (ja) * 2016-10-04 2018-04-12 日本特殊陶業株式会社 蓋部材、発光装置、およびこれらの製造方法
JP6866664B2 (ja) * 2017-02-06 2021-04-28 日亜化学工業株式会社 発光装置の製造方法
US10347806B2 (en) * 2017-04-12 2019-07-09 Luminus, Inc. Packaged UV-LED device with anodic bonded silica lens and no UV-degradable adhesive
US10672957B2 (en) 2017-07-19 2020-06-02 Cree, Inc. LED apparatuses and methods for high lumen output density
EP3439050B1 (en) * 2017-08-02 2020-10-28 Lg Innotek Co. Ltd Light emitting device package
US10957736B2 (en) 2018-03-12 2021-03-23 Cree, Inc. Light emitting diode (LED) components and methods
KR102684757B1 (ko) * 2019-08-22 2024-07-16 삼성디스플레이 주식회사 표시 장치
DE102020107409B4 (de) * 2020-03-18 2023-11-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Gehäuse für ein optoelektronisches halbleiterbauelement und optoelektronisches halbleiterbauelement
DE102024202118A1 (de) * 2024-03-07 2025-09-11 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung und Vereinzelung von MEMS-Bauelementen

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0611071B2 (ja) * 1983-09-07 1994-02-09 三洋電機株式会社 化合物半導体基板の分割方法
JPH10261808A (ja) * 1997-01-17 1998-09-29 Hitachi Cable Ltd ホトセンサ素子搭載用プラスチック回路成形品及びホトセンサの製造方法
KR100690917B1 (ko) * 1998-02-10 2007-03-08 니폰샤신인사츠가부시키가이샤 반도체 모듈용 기체시트의 제조방법
US6413839B1 (en) * 1998-10-23 2002-07-02 Emcore Corporation Semiconductor device separation using a patterned laser projection
US20050263854A1 (en) * 1998-10-23 2005-12-01 Shelton Bryan S Thick laser-scribed GaN-on-sapphire optoelectronic devices
JP2001345289A (ja) 2000-05-31 2001-12-14 Nec Corp 半導体装置の製造方法
JP3616872B2 (ja) * 2000-09-14 2005-02-02 住友電気工業株式会社 ダイヤモンドウエハのチップ化方法
US7307775B2 (en) * 2000-12-07 2007-12-11 Texas Instruments Incorporated Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates
US6744072B2 (en) * 2001-10-02 2004-06-01 Xerox Corporation Substrates having increased thermal conductivity for semiconductor structures
US6962834B2 (en) * 2002-03-22 2005-11-08 Stark David H Wafer-level hermetic micro-device packages
US6580054B1 (en) * 2002-06-10 2003-06-17 New Wave Research Scribing sapphire substrates with a solid state UV laser
US6960813B2 (en) * 2002-06-10 2005-11-01 New Wave Research Method and apparatus for cutting devices from substrates
US6806544B2 (en) * 2002-11-05 2004-10-19 New Wave Research Method and apparatus for cutting devices from conductive substrates secured during cutting by vacuum pressure
JP4271904B2 (ja) * 2002-06-24 2009-06-03 富士フイルム株式会社 固体撮像装置の製造方法
US6995032B2 (en) * 2002-07-19 2006-02-07 Cree, Inc. Trench cut light emitting diodes and methods of fabricating same
US6982470B2 (en) * 2002-11-27 2006-01-03 Seiko Epson Corporation Semiconductor device, method of manufacturing the same, cover for semiconductor device, and electronic equipment
WO2004059751A2 (en) * 2002-12-20 2004-07-15 Cree, Inc. Methods of forming semiconductor mesa structures including self-aligned contact layers and related devices
TWI248244B (en) * 2003-02-19 2006-01-21 J P Sercel Associates Inc System and method for cutting using a variable astigmatic focal beam spot
US6949449B2 (en) * 2003-07-11 2005-09-27 Electro Scientific Industries, Inc. Method of forming a scribe line on a ceramic substrate
JP4259979B2 (ja) * 2003-10-22 2009-04-30 新光電気工業株式会社 光透過性カバー及びこれを備えたデバイス並びにそれらの製造方法
WO2005045925A1 (ja) * 2003-11-07 2005-05-19 Shinko Electric Industries Co., Ltd. 電子装置及びその製造方法
US7008861B2 (en) * 2003-12-11 2006-03-07 Cree, Inc. Semiconductor substrate assemblies and methods for preparing and dicing the same
JP2005260154A (ja) * 2004-03-15 2005-09-22 Tokyo Seimitsu Co Ltd チップ製造方法
US7202141B2 (en) * 2004-03-29 2007-04-10 J.P. Sercel Associates, Inc. Method of separating layers of material
US7087463B2 (en) * 2004-08-04 2006-08-08 Gelcore, Llc Laser separation of encapsulated submount
JP2006086516A (ja) * 2004-08-20 2006-03-30 Showa Denko Kk 半導体発光素子の製造方法
TWI327340B (en) * 2004-10-07 2010-07-11 Showa Denko Kk Production method for semiconductor device
US7378288B2 (en) * 2005-01-11 2008-05-27 Semileds Corporation Systems and methods for producing light emitting diode array
US7306975B2 (en) * 2005-07-01 2007-12-11 Texas Instruments Incorporated Semiconductor wafer cutting blade and method
JP2007184426A (ja) * 2006-01-06 2007-07-19 Shinko Electric Ind Co Ltd 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8648365B2 (en) 2009-02-17 2014-02-11 Lg Innotek Co., Ltd. Lighting emitting device package

Also Published As

Publication number Publication date
TW200807751A (en) 2008-02-01
JP2007184426A (ja) 2007-07-19
EP1806782B1 (en) 2011-08-10
US20070161211A1 (en) 2007-07-12
US7494898B2 (en) 2009-02-24
EP1806782A2 (en) 2007-07-11
EP1806782A3 (en) 2010-03-03

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PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20061220

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid