TW200807536A - Wafer bonding method, thinning method and detaching method - Google Patents

Wafer bonding method, thinning method and detaching method Download PDF

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Publication number
TW200807536A
TW200807536A TW096118469A TW96118469A TW200807536A TW 200807536 A TW200807536 A TW 200807536A TW 096118469 A TW096118469 A TW 096118469A TW 96118469 A TW96118469 A TW 96118469A TW 200807536 A TW200807536 A TW 200807536A
Authority
TW
Taiwan
Prior art keywords
wafer
adhesive layer
adhesive
soft
hard
Prior art date
Application number
TW096118469A
Other languages
English (en)
Chinese (zh)
Other versions
TWI345266B (https=
Inventor
Yoshihiro Inao
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200807536A publication Critical patent/TW200807536A/zh
Application granted granted Critical
Publication of TWI345266B publication Critical patent/TWI345266B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/04—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving separate application of adhesive ingredients to the different surfaces to be joined
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7448—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7448—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer
    • H10P72/745—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer the bond interface between the auxiliary support and the wafer comprises three or more layers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW096118469A 2006-07-28 2007-05-24 Wafer bonding method, thinning method and detaching method TW200807536A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006206319A JP5027460B2 (ja) 2006-07-28 2006-07-28 ウエハの接着方法、薄板化方法、及び剥離方法

Publications (2)

Publication Number Publication Date
TW200807536A true TW200807536A (en) 2008-02-01
TWI345266B TWI345266B (https=) 2011-07-11

Family

ID=38981253

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096118469A TW200807536A (en) 2006-07-28 2007-05-24 Wafer bonding method, thinning method and detaching method

Country Status (4)

Country Link
US (1) US8080121B2 (https=)
JP (1) JP5027460B2 (https=)
TW (1) TW200807536A (https=)
WO (1) WO2008012937A1 (https=)

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TWI483304B (zh) * 2008-10-03 2015-05-01 東京應化工業股份有限公司 剝離方法、基板之黏著劑、及含基板之層合物
TWI664264B (zh) * 2014-08-13 2019-07-01 Jsr Corporation 積層體、基材的處理方法、暫時固定用組成物及半導體裝置
CN111180390A (zh) * 2018-11-09 2020-05-19 株式会社迪思科 板状物加工方法
TWI825301B (zh) * 2019-04-10 2023-12-11 日商迪思科股份有限公司 晶圓的加工方法
TWI826569B (zh) * 2018-11-06 2023-12-21 日商迪思科股份有限公司 晶圓的加工方法

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JP5426855B2 (ja) * 2008-09-18 2014-02-26 東京応化工業株式会社 ガラス基板の製造方法
DE102010007127A1 (de) * 2010-02-05 2011-08-11 Ev Group E. Thallner Gmbh Verfahren zur Behandlung eines temporär gebondeten Produktwafers
EP2523209B1 (de) * 2010-04-23 2017-03-08 EV Group GmbH Vorrichtung und Verfahren zum Ablösen eines Produktsubstrats von einem Trägersubstrat
US9263314B2 (en) * 2010-08-06 2016-02-16 Brewer Science Inc. Multiple bonding layers for thin-wafer handling
WO2012083561A1 (en) * 2010-12-24 2012-06-28 Siemens Aktiengesellschaft Nozzle for electronic assembly
JP5728243B2 (ja) * 2011-02-16 2015-06-03 東京応化工業株式会社 積層体
JP5478565B2 (ja) * 2011-07-15 2014-04-23 東京エレクトロン株式会社 接合システム
JP5958262B2 (ja) * 2011-10-28 2016-07-27 信越化学工業株式会社 ウエハ加工体、ウエハ加工用部材、ウエハ加工用仮接着材、及び薄型ウエハの製造方法
JP5593299B2 (ja) * 2011-11-25 2014-09-17 東京エレクトロン株式会社 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体
JP5830377B2 (ja) * 2011-12-28 2015-12-09 リンテック株式会社 シート貼付装置、およびシート貼付方法
JP5687230B2 (ja) * 2012-02-28 2015-03-18 信越化学工業株式会社 ウエハ加工体、ウエハ加工用部材、ウエハ加工用仮接着材、及び薄型ウエハの製造方法
JP5767159B2 (ja) * 2012-04-27 2015-08-19 信越化学工業株式会社 ウエハ加工体、ウエハ加工用部材、ウエハ加工用仮接着材、及び薄型ウエハの製造方法
JP5591859B2 (ja) * 2012-03-23 2014-09-17 株式会社東芝 基板の分離方法及び分離装置
US9096032B2 (en) * 2012-04-24 2015-08-04 Shin-Etsu Chemical Co., Ltd. Wafer processing laminate, wafer processing member, temporary bonding arrangement, and thin wafer manufacturing method
JP5752639B2 (ja) * 2012-05-28 2015-07-22 東京エレクトロン株式会社 接合システム、接合方法、プログラム及びコンピュータ記憶媒体
JP6176253B2 (ja) 2012-09-07 2017-08-09 旭硝子株式会社 インターポーザ用の中間品を製造する方法およびインターポーザ用の中間品
JP2014063791A (ja) * 2012-09-20 2014-04-10 Tokyo Electron Ltd 接合システム、接合方法、プログラム及びコンピュータ記憶媒体
JP6014455B2 (ja) * 2012-10-19 2016-10-25 富士フイルム株式会社 半導体装置の製造方法
JP6114596B2 (ja) * 2013-03-26 2017-04-12 富士フイルム株式会社 半導体装置製造用仮接合用積層体、および、半導体装置の製造方法
CN105612600B (zh) * 2013-10-07 2018-06-08 东丽株式会社 元件加工用层叠体、元件加工用层叠体的制造方法、及使用其的薄型元件的制造方法
JP6284816B2 (ja) * 2014-04-22 2018-02-28 東京エレクトロン株式会社 基板処理システム、基板処理方法、プログラム及びコンピュータ記憶媒体
JP2015214681A (ja) 2014-04-24 2015-12-03 セントラル硝子株式会社 硬化性組成物、仮接着材およびこれらを用いた部材と基材の仮接着方法
US10147630B2 (en) * 2014-06-11 2018-12-04 John Cleaon Moore Sectional porous carrier forming a temporary impervious support
JP2016146429A (ja) * 2015-02-09 2016-08-12 トヨタ自動車株式会社 半導体装置の製造方法
CN105690974B (zh) * 2016-01-21 2019-01-18 京东方科技集团股份有限公司 柔性薄膜贴合与剥离方法、柔性基板制备方法、衬底基板
CN108963173B (zh) * 2017-05-26 2021-08-27 宁德新能源科技有限公司 导电胶元件、导电胶带、极片、电芯及锂离子电池
CN110767612B (zh) * 2018-07-27 2021-06-18 奇景光电股份有限公司 贴合结构与贴合方法
JP7461118B2 (ja) * 2019-08-19 2024-04-03 株式会社ディスコ ウエーハの加工方法
JP7374657B2 (ja) * 2019-08-21 2023-11-07 株式会社ディスコ ウエーハの加工方法
JP7451028B2 (ja) * 2019-12-27 2024-03-18 株式会社ディスコ 保護シートの配設方法

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US7141300B2 (en) 2001-06-27 2006-11-28 Nitto Denko Corporation Adhesive sheet for dicing
DE10297455T5 (de) 2001-11-15 2004-09-23 Sekisui Chemical Co., Ltd. Kleber, Verfahren zum Ablösen eines Klebers von seinem Haftgrund, und druckreaktives Klebeband
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JP3853247B2 (ja) 2002-04-16 2006-12-06 日東電工株式会社 電子部品用加熱剥離型粘着シートおよび電子部品の加工方法並びに電子部品
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JP4592270B2 (ja) 2003-10-06 2010-12-01 日東電工株式会社 半導体ウエハの支持材からの剥離方法およびこれを用いた装置
JP4405246B2 (ja) * 2003-11-27 2010-01-27 スリーエム イノベイティブ プロパティズ カンパニー 半導体チップの製造方法
JP2005191550A (ja) 2003-12-01 2005-07-14 Tokyo Ohka Kogyo Co Ltd 基板の貼り付け方法
JP4393934B2 (ja) * 2004-06-23 2010-01-06 リンテック株式会社 半導体加工用粘着シート
JP4652030B2 (ja) * 2004-11-29 2011-03-16 東京応化工業株式会社 サポートプレートの貼り付け方法
TWI333672B (en) * 2005-03-29 2010-11-21 Furukawa Electric Co Ltd Wafer-dicing adhesive tape and method of producing chips using the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI483304B (zh) * 2008-10-03 2015-05-01 東京應化工業股份有限公司 剝離方法、基板之黏著劑、及含基板之層合物
TWI664264B (zh) * 2014-08-13 2019-07-01 Jsr Corporation 積層體、基材的處理方法、暫時固定用組成物及半導體裝置
TWI826569B (zh) * 2018-11-06 2023-12-21 日商迪思科股份有限公司 晶圓的加工方法
CN111180390A (zh) * 2018-11-09 2020-05-19 株式会社迪思科 板状物加工方法
CN111180390B (zh) * 2018-11-09 2023-08-15 株式会社迪思科 板状物加工方法
TWI830807B (zh) * 2018-11-09 2024-02-01 日商迪思科股份有限公司 板狀物加工方法
TWI825301B (zh) * 2019-04-10 2023-12-11 日商迪思科股份有限公司 晶圓的加工方法

Also Published As

Publication number Publication date
JP5027460B2 (ja) 2012-09-19
JP2008034623A (ja) 2008-02-14
TWI345266B (https=) 2011-07-11
WO2008012937A1 (fr) 2008-01-31
US20090199957A1 (en) 2009-08-13
US8080121B2 (en) 2011-12-20

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