201023288 六、發明說明： 【發明所屬之技術領域】 本發明係有關一種半導體晶圓黏貼方法。 【先前技術】 ic構裝係屬半導體產業的後段加工製程，可分為晶圓切 割、黏晶、銲線、封膠、印字、包裝，主要是將前製程加工 Θ 完成晶圓上1C予以分割成晶片，黏晶、並加上外接引腳及包 覆。 習知一般在黏晶步驟中，係以糊狀黏劑來將一半導體晶圓 黏貼至一用來裝設晶圓的框上。但糊狀黏劑很難控制厚度， 因此容易造成黏膠溢流的問題。 近年來，有人提出一種切割晶粒黏著膜（dicing die adhesive film，DDAF)其係可同時具有切割與黏晶功能之膠 膜，因此可簡化半導體製程中兩步驟式的黏貼製程。 惟，目前切割晶粒黏著膜貼附技術令均以加熱支撐晶圓的 響 工作載台做為加熱黏著膜的熱源，但往往會因為晶圓厚度衍 生出加熱困難或者是因為晶圓本身非均質物體，導致加熱時 黏著膜受熱不均，而造成某些區域產生貼合上的問題。此外， 由於工作載台之材料限制與考慮過高熱應力對於晶圓的影 響，所以無法提高加熱溫度。 【發明内容】 為解決上述問題，本發明目的之一係提供一種晶圓貼片方 - 法，利用直接對膠膜加熱以減輕晶圓貼片時的高溫對晶圓所造成的 3 201023288 應力影響。此外，亦可於晶圓下方的工作載台產生另一熱源來 避免晶圓與膠膜之間有過大的溫差而造成晶圓碎裂。 為了達到上述目的，本發明一實施例之一種晶圓貼片方法 包括提供一工作載台；設置一晶圓於工作載台上；以捲帶方 式提供一膠膜，其中膠膜含有一膠層與一隔離層；將膠層黏 貼至晶圓上並分離隔離層；以及於分離隔離層之前，提供一 熱源於膠膜上。 以下藉由具體實施例配合所附的圖式詳加說明，當更容易 瞭解本發明之目的、技術内容、特點及其所達成之功效。 【實施方式】 其詳細說明如下，所述較佳實施例僅做一說明非用以限定 本發明。 請先參考圖1，圖1係本發明一實施例之晶圓貼片方法之 流程圖。並請參酌圖2，圖2為本發明晶圓貼片方法之架構 示意圖。首先，提供一工作載台10(chuck table)(步驟S10)。 φ 再來，設置一晶圓20於工作載台10上（步驟S20)。接著，以 捲帶方式提供一膠膜30，其中膠膜30含有一膠層32與一隔 離層34(步驟S30)，如圖3所示（圖3為圖2的的局部放大示 意圖）。於又一實施例中，膠層32亦可由複數膠層與一切割 膜構成。再來，將膠層32黏貼至晶圓20上並分離隔離層34(步 驟S40)。最後，於分離隔離層34之前，提供一熱源於膠膜 上（步驟S50)。於一實施例中，熱源可為一加熱板40，且加熱 板40係貼附膠膜30中靠近隔離層34的一側。其中熱源可直接對膠 膜30加熱以減輕晶圓20貼片時所的高溫對晶圓20造成的應力影響。 201023288 接續上述說明，請繼續參考圖2，於一實施例中，更包含 設置一另一熱源於工作載台10下方以提供該晶圓20 —熱度 來避免晶圓20與膠膜30之間有過大的溫差而造成晶圓20 碎裂。此外，可以理解的是，工作载台10本身亦可成為另一 熱源，對晶圓20直接加熱。經由本發明之設計，之後對於膠 帶的選擇上亦具有較大的彈性空間。於又一實施例中，工作 載台10係含有複數吸孔12,並以抽真空方式將晶圓20固定 於工作載台10上。 再來，如圖2所示，本發明之晶圓貼片方法係包括提供複數按 壓滚輪50、52設置於膠膜30欲剝離的前端。其中部分按壓滾 輪，如滚輪50，以轉動方式將已和隔離層34分離的膠層32 貼附在晶圓20的表面上。另，部分按壓滾輪，如滚輪52,設 置於與熱源同側，搭配熱源所提供的熱度並以轉動方式將隔 離層34剝離出膠層30。 綜合上述，本發明提供一種晶片貼片方法，利用直接對膠膜加 熱以減輕晶圓貼片時的高溫對晶圓所造成的應力影響。此外，亦可 於晶圓下方的工作載台產生另一熱源來避免晶圓與膠膜之間 有過大的溫差而造成晶圓碎裂。 以上所述之實施例僅係為說明本發明之技術思想及特 點，其目的在使熟習此項技藝之人士能夠瞭解本發明之内容 並據以實施，當不能以之限定本發明之專利範圍，即大凡依 本發明所揭示之精神所作之均等變化或修飾，仍應涵蓋在本 發明之專利範圍内。 201023288 【圖式簡單說明】 圖1係本發明一實施例之晶圓貼片方法之流程圖。 圖2係本發明一實施例之晶圓貼片方法之架構示意圖。 圖3係圖2之局部放大圖。 【主要元件符號說明】201023288 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method of attaching a semiconductor wafer. [Prior Art] ic structure is a post-processing process of the semiconductor industry, which can be divided into wafer dicing, die bonding, wire bonding, encapsulation, printing, packaging, mainly to process the pre-process Θ 1C on the wafer. Form the wafer, bond the crystal, and add external pins and cladding. Conventionally, in the die bonding step, a paste is adhered to a semiconductor wafer to be mounted on a frame for mounting a wafer. However, it is difficult to control the thickness of the paste adhesive, so it is easy to cause the problem of adhesive overflow. In recent years, a dicing die adhesive film (DDAF) has been proposed which can simultaneously have a film for cutting and grain-bonding, thereby simplifying the two-step bonding process in a semiconductor process. However, the current die attach film attaching technology is to heat the supporting substrate of the wafer as a heat source for heating the adhesive film, but it is often caused by the difficulty of heating the wafer thickness or because the wafer itself is heterogeneous. The object causes uneven heating of the adhesive film during heating, which causes problems in some areas. In addition, the heating temperature cannot be increased due to material limitations of the work stage and consideration of the influence of excessive thermal stress on the wafer. SUMMARY OF THE INVENTION In order to solve the above problems, one of the objects of the present invention is to provide a wafer patch method, which utilizes direct heating of a film to reduce the influence of high temperature during wafer mounting on the stress of 3 201023288 caused by the wafer. . In addition, another heat source can be generated on the work stage under the wafer to avoid excessive temperature difference between the wafer and the film, causing wafer fragmentation. In order to achieve the above object, a wafer mounting method according to an embodiment of the present invention includes providing a working stage; providing a wafer on a working stage; and providing a film in a tape winding manner, wherein the film comprises a glue layer And an isolation layer; bonding the glue layer to the wafer and separating the isolation layer; and providing a heat source on the film before separating the isolation layer. The purpose, technical contents, features, and effects achieved by the present invention will become more apparent from the detailed description of the preferred embodiments. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The detailed description is not intended to limit the invention. Please refer to FIG. 1 first. FIG. 1 is a flow chart of a wafer patching method according to an embodiment of the present invention. Please refer to FIG. 2, which is a schematic diagram of the structure of the wafer patching method of the present invention. First, a chuck table 10 is provided (step S10). φ Next, a wafer 20 is placed on the work stage 10 (step S20). Next, a film 30 is provided in a tape winding manner, wherein the film 30 comprises a glue layer 32 and a barrier layer 34 (step S30), as shown in Fig. 3 (Fig. 3 is a partially enlarged view of Fig. 2). In yet another embodiment, the glue layer 32 can also be formed from a plurality of layers of glue and a dicing film. Further, the adhesive layer 32 is adhered to the wafer 20 and the separation layer 34 is separated (step S40). Finally, a heat source is supplied to the film before the separation layer 34 is separated (step S50). In one embodiment, the heat source can be a heating plate 40, and the heating plate 40 is attached to the side of the adhesive film 30 adjacent to the isolation layer 34. The heat source can directly heat the film 30 to reduce the stress caused by the high temperature of the wafer 20 on the wafer 20. 201023288 Following the above description, please continue to refer to FIG. 2. In an embodiment, a further heat source is disposed under the working stage 10 to provide the heat of the wafer 20 to avoid the gap between the wafer 20 and the film 30. Excessive temperature difference causes the wafer 20 to chip. In addition, it will be appreciated that the work stage 10 itself may also serve as another source of heat for direct heating of the wafer 20. Through the design of the present invention, there is also a greater flexibility in the choice of tape. In still another embodiment, the work stage 10 includes a plurality of suction holes 12 and the wafer 20 is fixed to the work stage 10 by vacuuming. Further, as shown in Fig. 2, the wafer mounting method of the present invention comprises providing a plurality of pressing rollers 50, 52 disposed at the front end of the film 30 to be peeled off. A portion of the pressing roller, such as the roller 50, rotatably attaches the adhesive layer 32 that has been separated from the spacer layer 34 to the surface of the wafer 20. In addition, a portion of the pressing roller, such as roller 52, is placed on the same side as the heat source, with the heat provided by the heat source and the separation layer 34 is peeled off the glue layer 30 in a rotational manner. In summary, the present invention provides a wafer mounting method that utilizes direct heating of a film to mitigate the stress effects of high temperatures on the wafer during wafer mounting. In addition, another heat source can be generated on the working stage below the wafer to avoid excessive temperature difference between the wafer and the film, causing wafer fragmentation. The embodiments described above are merely illustrative of the technical spirit and the features of the present invention, and the objects of the present invention can be understood by those skilled in the art, and the scope of the present invention cannot be limited thereto. That is, the equivalent variations or modifications made by the spirit of the present invention should still be included in the scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a flow chart of a wafer patching method according to an embodiment of the present invention. 2 is a schematic structural view of a wafer patching method according to an embodiment of the present invention. Figure 3 is a partial enlarged view of Figure 2. [Main component symbol description]
10 工作載台 12 吸孔 20 晶圓 30 膠膜 32 膠層 34 隔離層 40 熱源 50, 52 按壓滾輪 S10 提供一工作載台 S20 S30 設置一晶圓於該工作載台上 以捲帶提供一膠膜，其令該膠膜含有 一膠層與一隔離層 S40 S50 將該膠層黏貼至該晶圓上並分離該 隔離層 分離該隔離層之前，提供一熱源於該 膠膜上10 Work stage 12 Suction hole 20 Wafer 30 Film 32 Adhesive layer 34 Isolation layer 40 Heat source 50, 52 Press roller S10 Provide a working stage S20 S30 Set a wafer on the work stage to provide a glue with a tape a film, the film comprising a glue layer and an isolation layer S40 S50, the glue layer is adhered to the wafer and the isolation layer is separated to separate the isolation layer, and a heat is supplied to the film