JP4652030B2 - サポートプレートの貼り付け方法 - Google Patents
サポートプレートの貼り付け方法 Download PDFInfo
- Publication number
- JP4652030B2 JP4652030B2 JP2004344737A JP2004344737A JP4652030B2 JP 4652030 B2 JP4652030 B2 JP 4652030B2 JP 2004344737 A JP2004344737 A JP 2004344737A JP 2004344737 A JP2004344737 A JP 2004344737A JP 4652030 B2 JP4652030 B2 JP 4652030B2
- Authority
- JP
- Japan
- Prior art keywords
- support plate
- semiconductor wafer
- plate
- adhesive
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 23
- 239000012790 adhesive layer Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 21
- 239000000853 adhesive Substances 0.000 claims description 18
- 230000001070 adhesive effect Effects 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000012298 atmosphere Substances 0.000 claims description 3
- 239000002904 solvent Substances 0.000 description 26
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 13
- 230000001681 protective effect Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 5
- 230000006837 decompression Effects 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Adhesives Or Adhesive Processes (AREA)
Description
また、積層体の厚みも均一になるので、従来よりも基板を更に薄厚化することができる。
先ず押圧板18の平行度の調整を行う。平行度を出すには、ボールジョイント33のボルトを緩めボールジョイント33をフリーの状態にする。そして、この状態のまま押圧板18を自重で下降せしめ、押圧板18の下面を保持台17の上面に当接させる。この時点で保持台17と押圧板18とは平行になる。次いで、ボルトを締め付けボールジョイント33を固定した後、押圧板18を上昇せしめる。
尚、上記実施例ではチャンバー11内の減圧状態を大気圧に戻した後に押圧板18を上昇せしめるようにしたが、先に押圧板18を上昇せしめ、この後にチャンバー11内を大気圧に戻してもよい。
Claims (1)
- 半導体ウェーハをグラインダーによって薄板化する工程において、半導体ウェーハの基板の回路形成面をサポートプレートに貼り付ける方法であって、
基板の回路形成面に接着剤を塗布して回路形成面の上に接着剤層を形成し、次いでこの接着剤層を加熱して乾燥固化せしめ、この後、前記接着剤層の上に厚み方向の貫通孔をプレートの全域に亘って設けたサポートプレートを重ね、この状態で減圧雰囲気且つ加熱下においてサポートプレートを接着剤層に押し付けて圧着し、
前記基板の回路形成面に塗布した接着剤の乾燥は250℃以下の温度で行い、減圧雰囲気における積層体の加熱温度は200℃以下とすることを特徴とするサポートプレートの貼り付け方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004344737A JP4652030B2 (ja) | 2004-11-29 | 2004-11-29 | サポートプレートの貼り付け方法 |
KR1020050114164A KR101099248B1 (ko) | 2004-11-29 | 2005-11-28 | 서포트플레이트의 접착방법 |
TW094141922A TWI430387B (zh) | 2004-11-29 | 2005-11-29 | 輔助板之貼合方法 |
CNB2005101363874A CN100530527C (zh) | 2004-11-29 | 2005-11-29 | 支承板的粘贴方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004344737A JP4652030B2 (ja) | 2004-11-29 | 2004-11-29 | サポートプレートの貼り付け方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006156683A JP2006156683A (ja) | 2006-06-15 |
JP4652030B2 true JP4652030B2 (ja) | 2011-03-16 |
Family
ID=36634584
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004344737A Active JP4652030B2 (ja) | 2004-11-29 | 2004-11-29 | サポートプレートの貼り付け方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4652030B2 (ja) |
KR (1) | KR101099248B1 (ja) |
CN (1) | CN100530527C (ja) |
TW (1) | TWI430387B (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5027460B2 (ja) * | 2006-07-28 | 2012-09-19 | 東京応化工業株式会社 | ウエハの接着方法、薄板化方法、及び剥離方法 |
CA2609169C (en) | 2006-11-15 | 2011-01-18 | Rohm And Haas Company | Adhesives for elastomers |
JP4825695B2 (ja) * | 2007-01-19 | 2011-11-30 | 東京応化工業株式会社 | 液状溶剤当接ユニット |
JP5090789B2 (ja) * | 2007-05-30 | 2012-12-05 | 東京応化工業株式会社 | 貼り合わせ装置、接着剤の溶解を防ぐ方法、及び貼り合わせ方法 |
JP2009130218A (ja) * | 2007-11-26 | 2009-06-11 | Tokyo Ohka Kogyo Co Ltd | 貼付装置および貼付方法 |
JP4742252B2 (ja) * | 2008-12-10 | 2011-08-10 | カシオ計算機株式会社 | 半導体装置の製造方法 |
KR101027858B1 (ko) * | 2009-01-13 | 2011-04-07 | 도레이첨단소재 주식회사 | 반도체 박막 웨이퍼 가공용 웨이퍼 서포트 점착필름 |
JP5520491B2 (ja) * | 2009-01-27 | 2014-06-11 | 株式会社日立ハイテクノロジーズ | 試料ステージ装置 |
JP6869101B2 (ja) * | 2017-05-12 | 2021-05-12 | 株式会社ダイセル | 接着剤層形成装置、半導体チップ製造ライン、及び積層体の製造方法 |
JP7220135B2 (ja) * | 2018-11-01 | 2023-02-09 | 信越化学工業株式会社 | 積層体の製造方法、及び基板の製造方法 |
JP7396863B2 (ja) * | 2019-11-06 | 2023-12-12 | 株式会社ディスコ | 保護部材の形成方法 |
JP7335136B2 (ja) * | 2019-11-06 | 2023-08-29 | 株式会社ディスコ | 樹脂保護部材形成装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61208842A (ja) * | 1985-03-14 | 1986-09-17 | Nippon Telegr & Teleph Corp <Ntt> | 半導体ウエハ支持基板 |
JP2001077304A (ja) * | 1999-06-28 | 2001-03-23 | Mitsubishi Gas Chem Co Inc | 電子部品の製造法 |
JP2002059363A (ja) * | 2000-08-23 | 2002-02-26 | Chemitoronics Co Ltd | ウエーハ支持体 |
JP2004296935A (ja) * | 2003-03-27 | 2004-10-21 | Sharp Corp | 半導体装置の製造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100575867B1 (ko) * | 2002-12-26 | 2006-05-03 | 주식회사 하이닉스반도체 | 반도체 다이 접착방법 |
-
2004
- 2004-11-29 JP JP2004344737A patent/JP4652030B2/ja active Active
-
2005
- 2005-11-28 KR KR1020050114164A patent/KR101099248B1/ko active IP Right Grant
- 2005-11-29 CN CNB2005101363874A patent/CN100530527C/zh active Active
- 2005-11-29 TW TW094141922A patent/TWI430387B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61208842A (ja) * | 1985-03-14 | 1986-09-17 | Nippon Telegr & Teleph Corp <Ntt> | 半導体ウエハ支持基板 |
JP2001077304A (ja) * | 1999-06-28 | 2001-03-23 | Mitsubishi Gas Chem Co Inc | 電子部品の製造法 |
JP2002059363A (ja) * | 2000-08-23 | 2002-02-26 | Chemitoronics Co Ltd | ウエーハ支持体 |
JP2004296935A (ja) * | 2003-03-27 | 2004-10-21 | Sharp Corp | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2006156683A (ja) | 2006-06-15 |
TWI430387B (zh) | 2014-03-11 |
KR20060059826A (ko) | 2006-06-02 |
TW200629462A (en) | 2006-08-16 |
CN1815688A (zh) | 2006-08-09 |
KR101099248B1 (ko) | 2011-12-27 |
CN100530527C (zh) | 2009-08-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101193308B1 (ko) | 서포트플레이트의 첩부장치 | |
KR101099248B1 (ko) | 서포트플레이트의 접착방법 | |
JP4781802B2 (ja) | サポートプレートの貼り合わせ手段及び貼り合わせ装置、並びにサポートプレートの貼り合わせ方法 | |
US8802542B2 (en) | Combination of a substrate and a wafer | |
JP2006196705A (ja) | 回路素子の形成方法および多層回路素子 | |
JP2006135272A (ja) | 基板のサポートプレート及びサポートプレートの剥離方法 | |
JP2005191550A (ja) | 基板の貼り付け方法 | |
JP2008034623A (ja) | ウエハの接着方法、薄板化方法、及び剥離方法 | |
JPH0737768A (ja) | 半導体ウェハの補強方法及び補強された半導体ウェハ | |
TWI639671B (zh) | 黏著帶貼付方法及黏著帶貼付裝置 | |
JP2005191535A (ja) | 貼り付け装置および貼り付け方法 | |
CN114050113A (zh) | 封装方法 | |
JP2002192394A (ja) | 無機基板のプレス加工法およびプレス装置 | |
JP7201342B2 (ja) | ウエーハの加工方法 | |
JP7303704B2 (ja) | ウェーハの分割方法 | |
JP7317482B2 (ja) | ウエーハの加工方法 | |
JP2007112031A (ja) | ラミネート装置及びラミネート方法 | |
JPH09320913A (ja) | ウェーハ貼り付け方法及びその装置 | |
JP2014049537A (ja) | ウェーハの加工方法 | |
WO2015087763A1 (ja) | 封止シート貼付け方法 | |
JP2009016534A (ja) | 貼り合せ方法及び貼り合せ用基板 | |
JP2004040050A (ja) | 半導体装置の製造方法及び製造装置 | |
JP3348261B2 (ja) | 基板の貼り合わせ方法 | |
JP2972661B2 (ja) | 熱圧着装置 | |
KR20010063393A (ko) | 열 압착 원리를 이용한 필름의 완전 평면 접착 방법 및 그장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070809 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080327 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100622 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100816 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100907 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101005 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101102 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101125 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20101214 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20101215 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4652030 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131224 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |