JP7317482B2 - ウエーハの加工方法 - Google Patents
ウエーハの加工方法 Download PDFInfo
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- JP7317482B2 JP7317482B2 JP2018194921A JP2018194921A JP7317482B2 JP 7317482 B2 JP7317482 B2 JP 7317482B2 JP 2018194921 A JP2018194921 A JP 2018194921A JP 2018194921 A JP2018194921 A JP 2018194921A JP 7317482 B2 JP7317482 B2 JP 7317482B2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02016—Backside treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Dicing (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Description
ウエーハ配設工程を実施するに際し、まず、後述する熱圧着工程を実施する熱圧着装置30(図2を参照。)の保持手段となるヒータテーブル20のテーブル表面22にサブストレート18を載置する。テーブル表面22は、平坦面であり、ヒータテーブル20の内部には、図示しない電気ヒータと温度センサとが内蔵されている。ヒータテーブル20の表面22に載置されたサブストレート18上に剥離層16を配設する。剥離層16を配設する際には、サブストレート18の中心と剥離層16の中心とを合致させることが好ましい。上記したように、サブストレート18はウエーハ10に対し同径以上に形成され、剥離層16はウエーハ10よりも小径に形成されていることから、剥離層16の外側には、サブストレート18が露出する状態となる。
上記したウエーハ配設工程が完了したならば、次いで熱圧着工程を実施する。熱圧着工程は、シート14を介してサブストレート18に配設されたウエーハ10を密閉環境内で減圧してシート14を加熱すると共にウエーハ10を押圧してシート14を介してウエーハ10をサブストレート18に熱圧着する工程である。図2を参照しながら、該シート熱圧着工程を実施する熱圧着装置30の機能、作用について説明する。
上記した熱圧着工程が完了し、一体化ウエーハWが形成されたならば、ウエーハ10の裏面を加工する加工工程を実施する。本実施形態の加工工程は、裏面10bを研削する研削加工を実施するものであり、図3、図4を参照しながらより具体的に説明する。
上記したウエーハ10の裏面10bを加工する加工工程が完了したならば、研削装置50から一体化ウエーハWを搬出し、図5(a)に示す剥離工程を実施するための保持手段70に搬送する。保持手段70の上面は上記したチャックテーブル52と同様に、通気性を有する吸着チャック72によって形成されており、図示しない吸引手段が接続されている。
11:デバイス
12:分割予定ライン
14:シート
16:剥離層
18:サブストレート
20:ヒータテーブル
30:熱圧着装置
32:支持基台
34:吸引孔
36:密閉カバー部材
38:押圧部材
38b:押圧プレート
50:研削装置
52:チャックテーブル
60:研削手段
66:研削ホイール
68:研削砥石
70:保持手段
Claims (7)
- 複数のデバイスが分割予定ラインによって区画され表面に形成されたウエーハの裏面を加工するウエーハの加工方法であって、
ウエーハよりも径が大きいサブストレートの上面にウエーハよりも小径で、加熱されても粘着性を発揮しない素材による剥離層を配設すると共に、ウエーハと同径以上のポリオレフィン系シート又はポリエステル系シートのいずれかのシートを、該剥離層を介してサブストレートの上面に敷設し、該シートの上面にウエーハの表面を位置付けて配設するウエーハ配設工程と、
該シートを介して該サブストレートに配設されたウエーハを密閉環境内で減圧して該シートを加熱して粘着性を発揮させると共にウエーハを押圧して該シートを介してウエーハを該サブストレートに熱圧着するシート熱圧着工程と、
ウエーハの裏面に加工を施す加工工程と、
ウエーハを該シートから剥離する剥離工程と、
から少なくとも構成され、
該シート熱圧着工程において、該シートがウエーハを囲繞して盛り上がるようにウエーハを押圧し、
該剥離層は、該加工工程後の該剥離工程において該サブストレートから剥離されるウエーハの加工方法。 - 該剥離層は、紙、布、オブラート、ポリイミドシートの少なくともいずれかを含む請求項1に記載のウエーハの加工方法。
- 該加工工程において、ウエーハの裏面を研削する研削加工を実施する請求項1又は2に記載のウエーハの加工方法。
- ポリオレフィン系シートは、ポリエチレンシート、ポリプロピレンシート、ポリスチレンシート、のいずれかにより構成される請求項1乃至3のいずれかに記載のウエーハの加工方法。
- 該シート熱圧着工程において、該ポリエチレンシートの加熱温度は120~140℃であり、該ポリプロピレンシートの加熱温度は160~180℃であり、該ポリスチレンシートの加熱温度は220~240℃である請求項4に記載のウエーハの加工方法。
- 該ポリエステル系シートは、ポリエチレンテレフタレートシート、ポリエチレンナフタレートシートのいずれかにより構成される請求項1乃至3のいずれかに記載のウエーハの加工方法。
- 該シート熱圧着工程において、該ポリエチレンテレフタレートシートの加熱温度は250~270℃であり、該ポリエチレンナフタレートシートの加熱温度は160~180℃である請求項6に記載のウエーハの加工方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018194921A JP7317482B2 (ja) | 2018-10-16 | 2018-10-16 | ウエーハの加工方法 |
KR1020190119560A KR20200042847A (ko) | 2018-10-16 | 2019-09-27 | 웨이퍼의 가공 방법 |
CN201910972930.6A CN111063631A (zh) | 2018-10-16 | 2019-10-14 | 晶片的加工方法 |
TW108136971A TWI813791B (zh) | 2018-10-16 | 2019-10-15 | 晶圓的加工方法 |
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JP2018194921A JP7317482B2 (ja) | 2018-10-16 | 2018-10-16 | ウエーハの加工方法 |
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JP2020064921A JP2020064921A (ja) | 2020-04-23 |
JP7317482B2 true JP7317482B2 (ja) | 2023-07-31 |
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JP (1) | JP7317482B2 (ja) |
KR (1) | KR20200042847A (ja) |
CN (1) | CN111063631A (ja) |
TW (1) | TWI813791B (ja) |
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CN116351644B (zh) * | 2023-03-17 | 2023-10-20 | 江苏晶工半导体设备有限公司 | 一种半导体晶片上蜡机 |
Citations (7)
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JP2011029450A (ja) | 2009-07-27 | 2011-02-10 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2013041973A (ja) | 2011-08-15 | 2013-02-28 | Disco Abrasive Syst Ltd | 板状物の研削方法 |
JP2013243350A (ja) | 2012-04-24 | 2013-12-05 | Shin Etsu Chem Co Ltd | ウエハ加工体、ウエハ加工用部材、ウエハ加工用仮接着材、及び薄型ウエハの製造方法 |
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JP2017098309A (ja) | 2015-11-18 | 2017-06-01 | 日東電工株式会社 | シート状樹脂組成物、積層シート及び半導体装置の製造方法 |
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JP2004296839A (ja) | 2003-03-27 | 2004-10-21 | Kansai Paint Co Ltd | 半導体チップの製造方法 |
JP5443377B2 (ja) * | 2007-11-21 | 2014-03-19 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | エピタキシャルに配向された厚膜を調製するための調製システムおよび方法 |
US8852391B2 (en) * | 2010-06-21 | 2014-10-07 | Brewer Science Inc. | Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate |
WO2016063917A1 (ja) * | 2014-10-23 | 2016-04-28 | リンテック株式会社 | 表面保護用シート |
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2018
- 2018-10-16 JP JP2018194921A patent/JP7317482B2/ja active Active
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2019
- 2019-09-27 KR KR1020190119560A patent/KR20200042847A/ko unknown
- 2019-10-14 CN CN201910972930.6A patent/CN111063631A/zh active Pending
- 2019-10-15 TW TW108136971A patent/TWI813791B/zh active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011029450A (ja) | 2009-07-27 | 2011-02-10 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2013041973A (ja) | 2011-08-15 | 2013-02-28 | Disco Abrasive Syst Ltd | 板状物の研削方法 |
JP2013243350A (ja) | 2012-04-24 | 2013-12-05 | Shin Etsu Chem Co Ltd | ウエハ加工体、ウエハ加工用部材、ウエハ加工用仮接着材、及び薄型ウエハの製造方法 |
JP2014029999A (ja) | 2012-06-29 | 2014-02-13 | Hitachi Chemical Co Ltd | 仮固定用フィルム、仮固定用フィルムシート及び半導体装置の製造方法 |
JP2014088523A (ja) | 2012-10-31 | 2014-05-15 | Nitto Denko Corp | 半導体装置製造用接着シート及び半導体装置の製造方法 |
WO2017077957A1 (ja) | 2015-11-04 | 2017-05-11 | リンテック株式会社 | 半導体装置の製造方法 |
JP2017098309A (ja) | 2015-11-18 | 2017-06-01 | 日東電工株式会社 | シート状樹脂組成物、積層シート及び半導体装置の製造方法 |
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