JP7317483B2 - ウエーハの加工方法 - Google Patents
ウエーハの加工方法 Download PDFInfo
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- JP7317483B2 JP7317483B2 JP2018194922A JP2018194922A JP7317483B2 JP 7317483 B2 JP7317483 B2 JP 7317483B2 JP 2018194922 A JP2018194922 A JP 2018194922A JP 2018194922 A JP2018194922 A JP 2018194922A JP 7317483 B2 JP7317483 B2 JP 7317483B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02016—Backside treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Description
ウエーハ配設工程を実施するに際し、まず、後述する熱圧着工程を実施する熱圧着装置30(図2(a)を参照。)の保持手段となる支持テーブル20の上面22の中央にシート14を敷設する。支持テーブル20の上面22は、フッ素樹脂で被覆されており、且つ平坦に形成されている。さらに、図2(a)に示すように、支持テーブル20の内部には、加熱手段としての温度センサ(図示は省略)を含む電気ヒータ24が内蔵されている。
上記したウエーハ配設工程が完了したならば、次いでシート熱圧着工程を実施する。シート熱圧着工程は、シート14及び剥離層16を介して支持テーブル20上に配設されたウエーハ10を密閉環境内で減圧してシート14を加熱すると共に、ウエーハ10を押圧して、ウエーハ10の外周をシート14に熱圧着する工程である。図2を参照しながら、該シート熱圧着工程を実施する熱圧着装置30の機能、作用について説明する。
上記した熱圧着工程が完了し、一体化ウエーハWが形成されたならば、ウエーハ10の裏面を加工する加工工程を実施する。本実施形態の加工工程は、裏面10bを研削する研削加工を実施するものであり、図3、図4を参照しながらより具体的に説明する。
支持テーブル20から一体化ウエーハWを搬出したならば、図5(a)に示す剥離工程を実施するための保持手段70に搬送する。保持手段70の上面は上記したチャックテーブル52と同様に、通気性を有する吸着チャック72によって形成されており、図示しない吸引手段が接続されている。
11:デバイス
12:分割予定ライン
14:シート
16:剥離層
20:支持テーブル
22:上面
24:電気ヒータ(加熱手段)
30:熱圧着装置
32:支持基台
34:吸引孔
36:密閉カバー部材
38:押圧部材
38b:押圧プレート
50:研削装置
52:チャックテーブル
60:研削手段
66:研削ホイール
68:研削砥石
70:保持手段
Claims (9)
- 複数のデバイスが分割予定ラインによって区画され表面に形成されたウエーハの裏面を加工するウエーハの加工方法であって、
上面が平坦に形成された支持テーブルの該上面にウエーハの形状よりも大きい大きさのポリオレフィン系シート又はポリエステル系シートのいずれかのシートを敷設すると共に、該シートの上面にウエーハよりも小径で粘着性を有しない円形状のシートである剥離層を敷設し、該シートの上面に直接ウエーハの表面の外周を位置付けて配設するウエーハ配設工程と、
該シート及び該剥離層を介して該支持テーブルに配設されたウエーハを密閉環境内で減圧して該シートを溶融温度近傍であって軟化して粘着性を発揮する温度まで加熱すると共にウエーハを押圧して該シートにウエーハの外周を熱圧着するシート熱圧着工程と、
ウエーハの裏面に加工を施す加工工程と、
該シートをウエーハから剥離する剥離工程と、
から少なくとも構成され、
該シート熱圧着工程において、該シートがウエーハを囲繞して盛り上がるようにウエーハを押圧するウエーハの加工方法。 - 該剥離層は、紙、布、オブラート、ポリイミドシートの少なくともいずれかを含む請求項1に記載のウエーハの加工方法。
- 該支持テーブルは、加熱手段を含み、該シート熱圧着工程において、該支持テーブルは該加熱手段で加熱される請求項1、又は2に記載のウエーハの加工方法。
- 該支持テーブルの上面は、フッ素樹脂で被覆されている請求項3に記載のウエーハの加工方法。
- 該加工工程において、ウエーハの裏面を研削する研削加工を実施する請求項1乃至4のいずれかに記載のウエーハの加工方法。
- ポリオレフィン系シートは、ポリエチレンシート、ポリプロピレンシート、ポリスチレンシート、のいずれかにより構成される請求項1乃至3のいずれかに記載のウエーハの加工方法。
- 該シート熱圧着工程において、該ポリエチレンシートの加熱温度は120~140℃であり、該ポリプロピレンシートの加熱温度は160~180℃であり、該ポリスチレンシートの加熱温度は220~240℃である請求項6に記載のウエーハの加工方法。
- 該ポリエステル系シートは、ポリエチレンテレフタレートシート、ポリエチレンナフタレートシートのいずれかにより構成される請求項1乃至3のいずれかに記載のウエーハの加工方法。
- 該シート熱圧着工程において、該ポリエチレンテレフタレートシートの加熱温度は250~270℃であり、該ポリエチレンナフタレートシートの加熱温度は160~180℃である請求項8に記載のウエーハの加工方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018194922A JP7317483B2 (ja) | 2018-10-16 | 2018-10-16 | ウエーハの加工方法 |
KR1020190120747A KR20200042849A (ko) | 2018-10-16 | 2019-09-30 | 웨이퍼의 가공 방법 |
TW108136939A TWI827701B (zh) | 2018-10-16 | 2019-10-14 | 晶圓加工方法 |
CN201910977745.6A CN111063608A (zh) | 2018-10-16 | 2019-10-15 | 晶片的加工方法 |
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JP2018194922A JP7317483B2 (ja) | 2018-10-16 | 2018-10-16 | ウエーハの加工方法 |
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JP2020064922A JP2020064922A (ja) | 2020-04-23 |
JP7317483B2 true JP7317483B2 (ja) | 2023-07-31 |
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KR (1) | KR20200042849A (ja) |
CN (1) | CN111063608A (ja) |
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CN112735978B (zh) * | 2020-12-16 | 2024-01-30 | 全球能源互联网研究院有限公司 | 压接装置和有压烧结设备 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005246491A (ja) | 2004-03-01 | 2005-09-15 | Disco Abrasive Syst Ltd | 研削装置及びウェーハの研削方法 |
JP2011029450A (ja) | 2009-07-27 | 2011-02-10 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2013041973A (ja) | 2011-08-15 | 2013-02-28 | Disco Abrasive Syst Ltd | 板状物の研削方法 |
JP2013211438A (ja) | 2012-03-30 | 2013-10-10 | Lintec Corp | 表面保護用シート |
JP2013243350A (ja) | 2012-04-24 | 2013-12-05 | Shin Etsu Chem Co Ltd | ウエハ加工体、ウエハ加工用部材、ウエハ加工用仮接着材、及び薄型ウエハの製造方法 |
JP2014029999A (ja) | 2012-06-29 | 2014-02-13 | Hitachi Chemical Co Ltd | 仮固定用フィルム、仮固定用フィルムシート及び半導体装置の製造方法 |
JP2014088523A (ja) | 2012-10-31 | 2014-05-15 | Nitto Denko Corp | 半導体装置製造用接着シート及び半導体装置の製造方法 |
JP2015162509A (ja) | 2014-02-26 | 2015-09-07 | リンテック株式会社 | シート貼付方法および貼付装置 |
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2018
- 2018-10-16 JP JP2018194922A patent/JP7317483B2/ja active Active
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2019
- 2019-09-30 KR KR1020190120747A patent/KR20200042849A/ko active Search and Examination
- 2019-10-14 TW TW108136939A patent/TWI827701B/zh active
- 2019-10-15 CN CN201910977745.6A patent/CN111063608A/zh active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005246491A (ja) | 2004-03-01 | 2005-09-15 | Disco Abrasive Syst Ltd | 研削装置及びウェーハの研削方法 |
JP2011029450A (ja) | 2009-07-27 | 2011-02-10 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2013041973A (ja) | 2011-08-15 | 2013-02-28 | Disco Abrasive Syst Ltd | 板状物の研削方法 |
JP2013211438A (ja) | 2012-03-30 | 2013-10-10 | Lintec Corp | 表面保護用シート |
JP2013243350A (ja) | 2012-04-24 | 2013-12-05 | Shin Etsu Chem Co Ltd | ウエハ加工体、ウエハ加工用部材、ウエハ加工用仮接着材、及び薄型ウエハの製造方法 |
JP2014029999A (ja) | 2012-06-29 | 2014-02-13 | Hitachi Chemical Co Ltd | 仮固定用フィルム、仮固定用フィルムシート及び半導体装置の製造方法 |
JP2014088523A (ja) | 2012-10-31 | 2014-05-15 | Nitto Denko Corp | 半導体装置製造用接着シート及び半導体装置の製造方法 |
JP2015162509A (ja) | 2014-02-26 | 2015-09-07 | リンテック株式会社 | シート貼付方法および貼付装置 |
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Publication number | Publication date |
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JP2020064922A (ja) | 2020-04-23 |
TW202032643A (zh) | 2020-09-01 |
KR20200042849A (ko) | 2020-04-24 |
TWI827701B (zh) | 2024-01-01 |
CN111063608A (zh) | 2020-04-24 |
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