TW200736598A - Inspection apparatus, lithographic system provided with the inspection apparatus and a method for inspecting a sample - Google Patents
Inspection apparatus, lithographic system provided with the inspection apparatus and a method for inspecting a sampleInfo
- Publication number
- TW200736598A TW200736598A TW095144592A TW95144592A TW200736598A TW 200736598 A TW200736598 A TW 200736598A TW 095144592 A TW095144592 A TW 095144592A TW 95144592 A TW95144592 A TW 95144592A TW 200736598 A TW200736598 A TW 200736598A
- Authority
- TW
- Taiwan
- Prior art keywords
- sample
- inspection apparatus
- inspecting
- radiation
- system provided
- Prior art date
Links
- 238000007689 inspection Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 230000005855 radiation Effects 0.000 abstract 4
- 238000001514 detection method Methods 0.000 abstract 2
- 238000011109 contamination Methods 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 238000001459 lithography Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/94—Investigating contamination, e.g. dust
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8822—Dark field detection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N2021/95676—Masks, reticles, shadow masks
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Nanotechnology (AREA)
- Pathology (AREA)
- Atmospheric Sciences (AREA)
- Immunology (AREA)
- General Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Length Measuring Devices By Optical Means (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/317,243 US7522263B2 (en) | 2005-12-27 | 2005-12-27 | Lithographic apparatus and method |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200736598A true TW200736598A (en) | 2007-10-01 |
TWI337255B TWI337255B (en) | 2011-02-11 |
Family
ID=37790580
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW098135180A TWI429899B (zh) | 2005-12-27 | 2006-12-01 | 檢測裝置,具有該檢測裝置之微影系統及檢測一樣本之方法 |
TW095144592A TWI337255B (en) | 2005-12-27 | 2006-12-01 | Inspection apparatus, lithographic system provided with the inspection apparatus and a method for inspecting a sample |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW098135180A TWI429899B (zh) | 2005-12-27 | 2006-12-01 | 檢測裝置,具有該檢測裝置之微影系統及檢測一樣本之方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7522263B2 (zh) |
JP (2) | JP4951629B2 (zh) |
KR (1) | KR101039103B1 (zh) |
TW (2) | TWI429899B (zh) |
WO (1) | WO2007075082A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI422816B (zh) * | 2009-08-18 | 2014-01-11 | Nuflare Technology Inc | 檢查裝置 |
CN110618585A (zh) * | 2019-10-17 | 2019-12-27 | 上海华力集成电路制造有限公司 | 监控光刻机晶圆移载台平整度的方法 |
Families Citing this family (51)
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US7684008B2 (en) * | 2003-06-11 | 2010-03-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7050146B2 (en) | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7385670B2 (en) * | 2004-10-05 | 2008-06-10 | Asml Netherlands B.V. | Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus |
US7880860B2 (en) * | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8125610B2 (en) * | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
US20070146658A1 (en) * | 2005-12-27 | 2007-06-28 | Asml Netherlands B.V. | Lithographic apparatus and method |
US7522263B2 (en) * | 2005-12-27 | 2009-04-21 | Asml Netherlands B.V. | Lithographic apparatus and method |
US7969548B2 (en) * | 2006-05-22 | 2011-06-28 | Asml Netherlands B.V. | Lithographic apparatus and lithographic apparatus cleaning method |
JP5029611B2 (ja) * | 2006-09-08 | 2012-09-19 | 株式会社ニコン | クリーニング用部材、クリーニング方法、露光装置、並びにデバイス製造方法 |
US20100183987A1 (en) * | 2006-12-08 | 2010-07-22 | Canon Kabushiki Kaisha | Exposure apparatus |
US8817226B2 (en) | 2007-02-15 | 2014-08-26 | Asml Holding N.V. | Systems and methods for insitu lens cleaning using ozone in immersion lithography |
US8654305B2 (en) * | 2007-02-15 | 2014-02-18 | Asml Holding N.V. | Systems and methods for insitu lens cleaning in immersion lithography |
US8011377B2 (en) | 2007-05-04 | 2011-09-06 | Asml Netherlands B.V. | Cleaning device and a lithographic apparatus cleaning method |
US8947629B2 (en) * | 2007-05-04 | 2015-02-03 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US7900641B2 (en) * | 2007-05-04 | 2011-03-08 | Asml Netherlands B.V. | Cleaning device and a lithographic apparatus cleaning method |
US7866330B2 (en) | 2007-05-04 | 2011-01-11 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US7916269B2 (en) | 2007-07-24 | 2011-03-29 | Asml Netherlands B.V. | Lithographic apparatus and contamination removal or prevention method |
US9019466B2 (en) * | 2007-07-24 | 2015-04-28 | Asml Netherlands B.V. | Lithographic apparatus, reflective member and a method of irradiating the underside of a liquid supply system |
US7894037B2 (en) * | 2007-07-30 | 2011-02-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
NL1035942A1 (nl) * | 2007-09-27 | 2009-03-30 | Asml Netherlands Bv | Lithographic Apparatus and Method of Cleaning a Lithographic Apparatus. |
SG151198A1 (en) * | 2007-09-27 | 2009-04-30 | Asml Netherlands Bv | Methods relating to immersion lithography and an immersion lithographic apparatus |
JP5017232B2 (ja) * | 2007-10-31 | 2012-09-05 | エーエスエムエル ネザーランズ ビー.ブイ. | クリーニング装置および液浸リソグラフィ装置 |
JP2009192520A (ja) * | 2007-11-15 | 2009-08-27 | Nikon Corp | 表面検査装置 |
NL1036273A1 (nl) * | 2007-12-18 | 2009-06-19 | Asml Netherlands Bv | Lithographic apparatus and method of cleaning a surface of an immersion lithographic apparatus. |
NL1036306A1 (nl) | 2007-12-20 | 2009-06-23 | Asml Netherlands Bv | Lithographic apparatus and in-line cleaning apparatus. |
US8339572B2 (en) | 2008-01-25 | 2012-12-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
NL1036682A1 (nl) * | 2008-04-01 | 2009-10-02 | Asml Netherlands Bv | Lithographic apparatus and contamination detection method. |
EP2128701A1 (en) * | 2008-05-30 | 2009-12-02 | ASML Netherlands BV | Method of determining defects in a substrate and apparatus for exposing a substrate in a lithographic process |
DE102008028868A1 (de) * | 2008-06-19 | 2009-12-24 | Carl Zeiss Smt Ag | Optische Baugruppe |
US7869645B2 (en) * | 2008-07-22 | 2011-01-11 | Seiko Epson Corporation | Image capture and calibratiion |
US8090184B2 (en) * | 2008-07-23 | 2012-01-03 | Seiko Epson Corporation | Fault detection of a printed dot-pattern bitmap |
US8269836B2 (en) * | 2008-07-24 | 2012-09-18 | Seiko Epson Corporation | Image capture, alignment, and registration |
NL2003678A (en) * | 2008-12-17 | 2010-06-21 | Asml Holding Nv | Euv mask inspection system. |
NL2003658A (en) * | 2008-12-31 | 2010-07-01 | Asml Holding Nv | Euv mask inspection. |
KR101535230B1 (ko) * | 2009-06-03 | 2015-07-09 | 삼성전자주식회사 | Euv 마스크용 공간 영상 측정 장치 및 방법 |
JP5540085B2 (ja) * | 2009-06-05 | 2014-07-02 | エックストラリス・テクノロジーズ・リミテッド | ガス検出装置 |
NL2004949A (en) * | 2009-08-21 | 2011-02-22 | Asml Netherlands Bv | Inspection method and apparatus. |
NL2005464A (en) * | 2009-12-17 | 2011-06-21 | Asml Netherlands Bv | A method of detecting a particle and a lithographic apparatus. |
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JP6118038B2 (ja) * | 2012-05-22 | 2017-04-19 | Hoya株式会社 | マスクブランクの欠陥検査方法、マスクブランクの製造方法、及び転写用マスクの製造方法 |
JP6282069B2 (ja) | 2013-09-13 | 2018-02-21 | キヤノン株式会社 | インプリント装置、インプリント方法、検出方法及びデバイス製造方法 |
DE102013219585A1 (de) * | 2013-09-27 | 2015-04-16 | Carl Zeiss Smt Gmbh | Optische Anordnung, insbesondere Plasma-Lichtquelle oder EUV-Lithographieanlage |
JP2016180976A (ja) * | 2015-03-24 | 2016-10-13 | ネオ セミテック. カンパニー リミテッドNEO SEMITECH. Co., Ltd | フォトマスク検査装置および検査方法 |
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-
2005
- 2005-12-27 US US11/317,243 patent/US7522263B2/en active Active
-
2006
- 2006-12-01 TW TW098135180A patent/TWI429899B/zh active
- 2006-12-01 US US11/607,097 patent/US8064038B2/en not_active Expired - Fee Related
- 2006-12-01 WO PCT/NL2006/000605 patent/WO2007075082A1/en active Application Filing
- 2006-12-01 KR KR1020087018436A patent/KR101039103B1/ko active IP Right Grant
- 2006-12-01 TW TW095144592A patent/TWI337255B/zh active
- 2006-12-01 JP JP2008548447A patent/JP4951629B2/ja active Active
- 2006-12-20 JP JP2006342191A patent/JP2007180549A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI422816B (zh) * | 2009-08-18 | 2014-01-11 | Nuflare Technology Inc | 檢查裝置 |
CN110618585A (zh) * | 2019-10-17 | 2019-12-27 | 上海华力集成电路制造有限公司 | 监控光刻机晶圆移载台平整度的方法 |
Also Published As
Publication number | Publication date |
---|---|
KR101039103B1 (ko) | 2011-06-07 |
TWI337255B (en) | 2011-02-11 |
JP4951629B2 (ja) | 2012-06-13 |
TWI429899B (zh) | 2014-03-11 |
WO2007075082A1 (en) | 2007-07-05 |
JP2009521730A (ja) | 2009-06-04 |
US20070146657A1 (en) | 2007-06-28 |
US20070146695A1 (en) | 2007-06-28 |
US7522263B2 (en) | 2009-04-21 |
US8064038B2 (en) | 2011-11-22 |
KR20080088619A (ko) | 2008-10-02 |
TW201007159A (en) | 2010-02-16 |
JP2007180549A (ja) | 2007-07-12 |
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