TW200728454A - Formulations for removing copper-containing post-etch residue from microelectronic devices - Google Patents
Formulations for removing copper-containing post-etch residue from microelectronic devicesInfo
- Publication number
- TW200728454A TW200728454A TW095141300A TW95141300A TW200728454A TW 200728454 A TW200728454 A TW 200728454A TW 095141300 A TW095141300 A TW 095141300A TW 95141300 A TW95141300 A TW 95141300A TW 200728454 A TW200728454 A TW 200728454A
- Authority
- TW
- Taiwan
- Prior art keywords
- containing post
- microelectronic devices
- formulations
- copper
- removing copper
- Prior art date
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title abstract 4
- 229910052802 copper Inorganic materials 0.000 title abstract 4
- 239000010949 copper Substances 0.000 title abstract 4
- 239000000203 mixture Substances 0.000 title abstract 4
- 238000004377 microelectronic Methods 0.000 title abstract 3
- 238000009472 formulation Methods 0.000 title 1
- 239000003085 diluting agent Substances 0.000 abstract 2
- 239000002904 solvent Substances 0.000 abstract 2
- 238000005260 corrosion Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 239000012530 fluid Substances 0.000 abstract 1
- 239000003112 inhibitor Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- C11D2111/22—
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US73472905P | 2005-11-08 | 2005-11-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200728454A true TW200728454A (en) | 2007-08-01 |
Family
ID=38609975
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095141300A TW200728454A (en) | 2005-11-08 | 2006-11-08 | Formulations for removing copper-containing post-etch residue from microelectronic devices |
Country Status (3)
Country | Link |
---|---|
US (1) | US20090301996A1 (zh) |
TW (1) | TW200728454A (zh) |
WO (1) | WO2007120259A2 (zh) |
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TWI398552B (zh) * | 2008-01-16 | 2013-06-11 | Mec Co Ltd | Etching solution |
CN104395989A (zh) * | 2012-05-18 | 2015-03-04 | 高级技术材料公司 | 用于改进有机残余物去除的具有低铜蚀刻速率的水性清洁溶液 |
TWI671395B (zh) * | 2014-01-29 | 2019-09-11 | 美商恩特葛瑞斯股份有限公司 | 化學機械研磨後配方及其使用方法 |
CN113462217A (zh) * | 2021-06-08 | 2021-10-01 | 上海应用技术大学 | 一种提高铜表面抑菌抗氧化性能的处理方法 |
CN115368982A (zh) * | 2014-06-04 | 2022-11-22 | 恩特格里斯公司 | 具有金属、电介质及氮化物兼容性的抗反射涂层清洗及蚀刻后残留物去除组成物 |
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2006
- 2006-11-07 WO PCT/US2006/060582 patent/WO2007120259A2/en active Application Filing
- 2006-11-07 US US12/093,125 patent/US20090301996A1/en not_active Abandoned
- 2006-11-08 TW TW095141300A patent/TW200728454A/zh unknown
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TWI398552B (zh) * | 2008-01-16 | 2013-06-11 | Mec Co Ltd | Etching solution |
CN102168271A (zh) * | 2010-01-28 | 2011-08-31 | 艾克索防腐研究有限公司 | 汽相腐蚀抑制剂组合物、其制备方法及其用于抗腐蚀的临时保护的用途 |
CN102168271B (zh) * | 2010-01-28 | 2015-09-09 | 艾克索防腐研究有限公司 | 汽相腐蚀抑制剂组合物、其制备方法及其用于抗腐蚀的临时保护的用途 |
CN104395989A (zh) * | 2012-05-18 | 2015-03-04 | 高级技术材料公司 | 用于改进有机残余物去除的具有低铜蚀刻速率的水性清洁溶液 |
TWI671395B (zh) * | 2014-01-29 | 2019-09-11 | 美商恩特葛瑞斯股份有限公司 | 化學機械研磨後配方及其使用方法 |
CN115368982A (zh) * | 2014-06-04 | 2022-11-22 | 恩特格里斯公司 | 具有金属、电介质及氮化物兼容性的抗反射涂层清洗及蚀刻后残留物去除组成物 |
CN113462217A (zh) * | 2021-06-08 | 2021-10-01 | 上海应用技术大学 | 一种提高铜表面抑菌抗氧化性能的处理方法 |
Also Published As
Publication number | Publication date |
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US20090301996A1 (en) | 2009-12-10 |
WO2007120259A3 (en) | 2008-01-17 |
WO2007120259A2 (en) | 2007-10-25 |
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