CN115368982A - 具有金属、电介质及氮化物兼容性的抗反射涂层清洗及蚀刻后残留物去除组成物 - Google Patents
具有金属、电介质及氮化物兼容性的抗反射涂层清洗及蚀刻后残留物去除组成物 Download PDFInfo
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- CN115368982A CN115368982A CN202211084009.6A CN202211084009A CN115368982A CN 115368982 A CN115368982 A CN 115368982A CN 202211084009 A CN202211084009 A CN 202211084009A CN 115368982 A CN115368982 A CN 115368982A
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- Prior art keywords
- acid
- removal composition
- liquid removal
- containing compound
- ether
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- 235000019437 butane-1,3-diol Nutrition 0.000 claims description 2
- INDXRDWMTVLQID-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO.OCCCCO INDXRDWMTVLQID-UHFFFAOYSA-N 0.000 claims description 2
- OWBTYPJTUOEWEK-UHFFFAOYSA-N butane-2,3-diol Chemical compound CC(O)C(C)O OWBTYPJTUOEWEK-UHFFFAOYSA-N 0.000 claims description 2
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 claims description 2
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- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 2
- UQGFMSUEHSUPRD-UHFFFAOYSA-N disodium;3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane Chemical compound [Na+].[Na+].O1B([O-])OB2OB([O-])OB1O2 UQGFMSUEHSUPRD-UHFFFAOYSA-N 0.000 claims description 2
- DUYCTCQXNHFCSJ-UHFFFAOYSA-N dtpmp Chemical compound OP(=O)(O)CN(CP(O)(O)=O)CCN(CP(O)(=O)O)CCN(CP(O)(O)=O)CP(O)(O)=O DUYCTCQXNHFCSJ-UHFFFAOYSA-N 0.000 claims description 2
- PKWIYNIDEDLDCJ-UHFFFAOYSA-N guanazole Chemical compound NC1=NNC(N)=N1 PKWIYNIDEDLDCJ-UHFFFAOYSA-N 0.000 claims description 2
- 125000001475 halogen functional group Chemical group 0.000 claims description 2
- CZWLNMOIEMTDJY-UHFFFAOYSA-N hexyl(trimethoxy)silane Chemical compound CCCCCC[Si](OC)(OC)OC CZWLNMOIEMTDJY-UHFFFAOYSA-N 0.000 claims description 2
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- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 claims description 2
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 claims description 2
- 239000007800 oxidant agent Substances 0.000 claims description 2
- LXPCOISGJFXEJE-UHFFFAOYSA-N oxifentorex Chemical compound C=1C=CC=CC=1C[N+](C)([O-])C(C)CC1=CC=CC=C1 LXPCOISGJFXEJE-UHFFFAOYSA-N 0.000 claims description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 2
- 229960005152 pentetrazol Drugs 0.000 claims description 2
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 claims description 2
- 239000000244 polyoxyethylene sorbitan monooleate Substances 0.000 claims description 2
- 229940068968 polysorbate 80 Drugs 0.000 claims description 2
- JCBJVAJGLKENNC-UHFFFAOYSA-M potassium ethyl xanthate Chemical compound [K+].CCOC([S-])=S JCBJVAJGLKENNC-UHFFFAOYSA-M 0.000 claims description 2
- NNHHDJVEYQHLHG-UHFFFAOYSA-N potassium silicate Chemical compound [K+].[K+].[O-][Si]([O-])=O NNHHDJVEYQHLHG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052913 potassium silicate Inorganic materials 0.000 claims description 2
- 235000019353 potassium silicate Nutrition 0.000 claims description 2
- OJTDGPLHRSZIAV-UHFFFAOYSA-N propane-1,2-diol Chemical compound CC(O)CO.CC(O)CO OJTDGPLHRSZIAV-UHFFFAOYSA-N 0.000 claims description 2
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 2
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- 125000005207 tetraalkylammonium group Chemical group 0.000 claims description 2
- YZVRVDPMGYFCGL-UHFFFAOYSA-N triacetyloxysilyl acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)=O)OC(C)=O YZVRVDPMGYFCGL-UHFFFAOYSA-N 0.000 claims description 2
- MPSUGQWRVNRJEE-UHFFFAOYSA-N triazol-1-amine Chemical compound NN1C=CN=N1 MPSUGQWRVNRJEE-UHFFFAOYSA-N 0.000 claims description 2
- WUMSTCDLAYQDNO-UHFFFAOYSA-N triethoxy(hexyl)silane Chemical compound CCCCCC[Si](OCC)(OCC)OCC WUMSTCDLAYQDNO-UHFFFAOYSA-N 0.000 claims description 2
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 claims description 2
- CSDVDSUBFYNSMC-UHFFFAOYSA-N triethoxysilylmethyl acetate Chemical compound CCO[Si](OCC)(OCC)COC(C)=O CSDVDSUBFYNSMC-UHFFFAOYSA-N 0.000 claims description 2
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 claims description 2
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 claims description 2
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 claims description 2
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- 125000004178 (C1-C4) alkyl group Chemical group 0.000 description 1
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- FYYLCPPEQLPTIQ-UHFFFAOYSA-N 2-[2-(2-propoxypropoxy)propoxy]propan-1-ol Chemical compound CCCOC(C)COC(C)COC(C)CO FYYLCPPEQLPTIQ-UHFFFAOYSA-N 0.000 description 1
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical group [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- FCKYPQBAHLOOJQ-UHFFFAOYSA-N Cyclohexane-1,2-diaminetetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)C1CCCCC1N(CC(O)=O)CC(O)=O FCKYPQBAHLOOJQ-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
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- AEKNYBWUEYNWMJ-QWOOXDRHSA-N Pramiconazole Chemical compound O=C1N(C(C)C)CCN1C1=CC=C(N2CCN(CC2)C=2C=CC(OC[C@@H]3O[C@](CN4N=CN=C4)(CO3)C=3C(=CC(F)=CC=3)F)=CC=2)C=C1 AEKNYBWUEYNWMJ-QWOOXDRHSA-N 0.000 description 1
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- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 150000001642 boronic acid derivatives Chemical class 0.000 description 1
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- 238000004090 dissolution Methods 0.000 description 1
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- 150000002334 glycols Chemical class 0.000 description 1
- 238000003306 harvesting Methods 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
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- 239000011810 insulating material Substances 0.000 description 1
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- 238000001465 metallisation Methods 0.000 description 1
- YPEWWOUWRRQBAX-UHFFFAOYSA-N n,n-dimethyl-3-oxobutanamide Chemical compound CN(C)C(=O)CC(C)=O YPEWWOUWRRQBAX-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
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- 239000001301 oxygen Substances 0.000 description 1
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- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
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- 239000000049 pigment Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 229920001748 polybutylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
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- 229920001155 polypropylene Polymers 0.000 description 1
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- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
-
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Abstract
本申请涉及一种具有金属、电介质及氮化物兼容性的抗反射涂层清洗及蚀刻后残留物去除组成物。特别的,本申请提供了一种从其上具有抗反射涂层ARC材料及/或蚀刻后残留物的衬底去除所述ARC材料及/或蚀刻后残留物的液体去除组成物及方法。所述组成物在集成电路的制造中实现ARC材料及/或蚀刻后残留物的至少部分去除同时对所述衬底上的金属物质(例如铝、铜及钴合金)有最小蚀刻,且不会损坏半导体架构中所采用的低k电介质及含氮化物材料。
Description
本申请是申请日为2015年6月2日、申请号为201580035488.4、发明名称为“具有金属、电介质及氮化物兼容性的抗反射涂层清洗及蚀刻后残留物去除组成物”的发明专利申请的分案申请。
技术领域
本发明涉及一种有用于从其上具有抗反射材料及/或蚀刻后残留物的微电子装置去除所述材料及/或蚀刻后残留物的液体去除组成物及方法。所述液体去除组成物可与下层电介质材料、互连金属(例如,铝、铜及钴合金)及含氮化物层兼容。
背景技术
当暴露于深紫外(DUV)辐射时,众所周知的是光致抗蚀剂的透射率组合衬底对DUV波长的高反射率导致DUV辐射反射回到光致抗蚀剂中,由此在光致抗蚀剂层中产生驻波。驻波在光致抗蚀剂中触发进一步的光化学反应,导致光致抗蚀剂的不均匀曝光,包含在不欲暴露到辐射的经遮蔽部分中,这导致线宽、间距及其它关键尺寸的变化。
为了解决透射率及反射率的问题,已发展出双层及三层光致抗蚀剂、底部抗反射涂层(BARC)及牺牲抗反射涂层(SARC)。此类涂层在涂布光致抗蚀剂之前涂布到衬底。所有此类抗反射涂层均在典型双重镶嵌集成中所遇到的晶片表面上具有平面化效果,且均将UV发色团并入到将会吸收入射UV辐射的旋涂聚合物基质中。
已证实从微电子装置晶片清洁去除抗反射涂层(ARC)材料相当困难及/或成本昂贵。如果未去除,那么所述层将会干扰随后的硅化或接点形成。通常,所述层是通过氧化性或还原性等离子体灰化或湿式清洗去除。然而,使衬底暴露于氧化性或还原性等离子体蚀刻的等离子体灰化会通过改变特征形状及尺寸或通过增加介电常数而导致损坏电介质材料。后一问题当低k电介质材料(例如有机硅酸盐玻璃(OSG)或掺碳氧化物玻璃)是下层电介质材料时更为显著。因此,通常希望避免使用等离子体灰化来去除ARC层。
当在后段制程(BEOL)应用中使用清洗剂/蚀刻剂组成物来处理铝、铜、钴合金或通过低电容(低k)绝缘材料或电介质分隔的其它互连金属或互连障蔽时,重要的是用于去除ARC及/或蚀刻后残留材料的组成物应具有良好的金属兼容性,例如,对铜、铝、钴等的低蚀刻速率,且下层硅酸盐材料保持不受清洗剂组成物影响。水性去除溶液由于较简单的处置技术通常为优选,然而,已知水性去除溶液会蚀刻或腐蚀金属互连件。
因此,所属领域中需要可从微电子装置的表面完全且有效率地去除ARC层及/或蚀刻后残留物同时最低程度地损坏共同延伸存在的电介质材料、互连金属及/或含氮化物材料的具有低水含量的去除组成物。
发明内容
本发明大致涉及一种有用于从其上具有抗反射涂层材料及/或蚀刻后残留物的微电子装置的表面去除所述材料及/或蚀刻后残留物的液体去除组成物及方法。所述液体去除组成物可与低k电介质材料、互连金属(例如,铝、铜及钴合金)及含氮化物层(例如,氮化硅)兼容。
在一个方面中,描述一种液体去除组成物,所述液体去除组成物包括至少一种含氟化物的化合物、至少一种有机溶剂、任选地水,及电介质钝化剂及/或腐蚀抑制剂及/或至少一种含硅化合物中的至少一者,其中所述液体去除组成物有用于从其上具有抗反射涂层(ARC)材料及/或蚀刻后残留物的微电子装置去除此类材料及/或残留物。
在另一方面中,一种从其上具有ARC材料及/或蚀刻后残留物的微电子装置去除所述材料及/或残留物的方法,所述方法包括使微电子装置与液体去除组成物接触足够的时间,以从微电子装置至少部分去除所述材料及残留物,其中所述液体去除组成物包括至少一种含氟化物的化合物、至少一种有机溶剂、任选地水及电介质钝化剂及/或腐蚀抑制剂及/或至少一种含硅化合物中的至少一者。
本发明的其它方面、特征及实施例将可由随后的揭示内容及随附的权利要求书而更完整明白。
具体实施方式
本发明涵盖有用于从其上具有抗反射涂层(ARC)材料及/或蚀刻后残留物的微电子装置的表面去除所述材料及/或蚀刻后残留物的液体去除组成物。
为了便于参考,“微电子装置”对应于经制造用于微电子、集成电路、能量收集或计算机芯片应用中的半导体衬底、平板显示器、相变存储器装置、太阳能面板及包含太阳能电池装置、光伏打组件及微机电系统(MEMS)的其它产品。应了解术语“微电子装置”不具任何限制意味,且包含最终将成为微电子装置或微电子组合件的任何衬底或结构。值得注意地,微电子装置衬底可为图案化、毯覆式及/或测试衬底。
如本文所用的“蚀刻后残留物”及“等离子体蚀刻后残留物”对应于在气相等离子体蚀刻制程(例如,BEOL双重镶嵌加工)后残留的材料。蚀刻后残留物的性质可为有机、有机金属、有机硅或无机,例如,含硅材料、含钛材料、含氮材料、含氧材料、聚合残留材料、含铜残留材料(包含氧化铜残留物)、含钨残留材料、含钴残留材料、例如氯及氟的蚀刻气体残留物,及其组合。
如本文所定义的“低k电介质材料”及ELK ILD材料对应于在层状微电子装置中作为电介质材料使用的任何材料,其中所述材料具有小于约3.5的介电常数。低k电介质材料优选地包含低极性材料,例如含硅有机聚合物、含硅的有机/无机混合材料、有机硅酸盐玻璃(OSG)、TEOS、氟化硅酸盐玻璃(FSG)、二氧化硅及掺碳氧化物(CDO)玻璃。低k电介质材料最优选地使用有机硅烷及/或有机硅氧烷前驱体沉积。应明白低k电介质材料可具有不同密度及不同孔隙度。
如本文所使用的“约”是意指对应于所述值的±5%。
如本文所用,“适用”于从其上具有ARC材料及/或蚀刻后残留物的微电子装置去除所述材料及/或蚀刻后残留物对应于从微电子装置至少部分去除所述ARC及/或蚀刻后残留材料。优选地,使用本文所描述的组成物从微电子装置去除至少约90%的材料,更优选地至少95%的材料,及最优选地至少99%的材料。
如本文所定义的“ARC材料”对应于双层及三层光致抗蚀剂、底部抗反射涂层(BARC)及牺牲抗反射涂层(SARC)且其性质可为有机及/或无机。
“基本上不含”在本文定义为小于2重量%,优选小于1重量%,更优选地小于0.5重量%,再更优选地小于0.1重量%,及最优选地0重量%。
如本文所定义的“含氮化物材料”对应于氮化硅、氧氮化硅、氮化硅碳、氮化钛、氧氮化钛、氮化钽及其组合。
本发明的组成物可以如下文更完整描述般在各种特定配方中体现。
在所有此类组成物中,其中参考包括零下限的重量百分比范围讨论组成物的特定组分时,将了解在组成物的各种特定实施例中可存在或不存在此类组分,且在存在此类组分的实施例中,其可以基于其中采用此类组分的组成物的总重量计低到0.001重量百分比的浓度存在。
在一个方面中,描述一种有用于从微电子装置去除ARC层及/或蚀刻后残留物的液体去除组成物。所述液体去除组成物包括至少一种含氟化物的化合物、至少一种有机溶剂、电介质钝化剂及/或腐蚀抑制剂及/或含硅化合物中的至少一者及(任选地)水。
在第一方面的一个实施例中,所述液体去除组成物包括至少一种含氟化物的化合物、至少一种有机溶剂及至少一种电介质钝化剂,由其组成或基本上由其组成。在另一实施例中,所述液体去除组成物包括至少一种含氟化物的化合物、至少一种有机溶剂、至少一种电介质钝化剂及水,由其组成或基本上由其组成。在又另一实施例中,所述液体去除组成物包括至少一种含氟化物的化合物、至少一种有机溶剂及至少一种腐蚀抑制剂,由其组成或基本上由其组成。在又另一实施例中,所述液体去除组成物包括至少一种含氟化物的化合物、至少一种有机溶剂、至少一种腐蚀抑制剂及水,由其组成或基本上由其组成。在另一实施例中,所述液体去除组成物包括至少一种含氟化物的化合物、至少一种有机溶剂及至少一种含硅化合物,由其组成或基本上由其组成。在又另一实施例中,所述液体去除组成物包括至少一种含氟化物的化合物、至少一种有机溶剂、至少一种含硅化合物及水,由其组成或基本上由其组成。在另一实施例中,所述液体去除组成物包括至少一种含氟化物的化合物、至少一种有机溶剂、至少一种电介质钝化剂及至少一种腐蚀抑制剂,由其组成或基本上由其组成。在又另一实施例中,所述液体去除组成物包括至少一种含氟化物的化合物、至少一种有机溶剂、至少一种电介质钝化剂、至少一种腐蚀抑制剂及水,由其组成或基本上由其组成。在另一实施例中,所述液体去除组成物包括至少一种含氟化物的化合物、至少一种有机溶剂、至少一种腐蚀抑制剂及至少一种含硅化合物,由其组成或基本上由其组成。在又另一实施例中,所述液体去除组成物包括至少一种含氟化物的化合物、至少一种有机溶剂、至少一种腐蚀抑制剂、至少一种含硅化合物及水,由其组成或基本上由其组成。在又另一实施例中,所述液体去除组成物包括至少一种含氟化物的化合物、至少一种有机溶剂、至少一种电介质钝化剂及至少一种含硅化合物,由其组成或基本上由其组成。在又另一实施例中,所述液体去除组成物包括至少一种含氟化物的化合物、至少一种有机溶剂、至少一种电介质钝化剂、至少一种含硅化合物及水,由其组成或基本上由其组成。在又另一实施例中,所述液体去除组成物包括至少一种含氟化物的化合物、至少一种有机溶剂、至少一种腐蚀抑制剂、至少一种电介质钝化剂及至少一种含硅化合物,由其组成或基本上由其组成。在又另一实施例中,所述液体去除组成物包括至少一种含氟化物的化合物、至少一种有机溶剂、至少一种腐蚀抑制剂、至少一种电介质钝化剂、至少一种含硅化合物及水,由其组成或基本上由其组成。
第一方面的液体去除组成物具有在从约1到约5,更优选地低于约4的范围中的pH值。优选地,所述组成物基本上不含氧化剂(例如,过氧化氢)、氢氧化四级铵化合物及化学机械抛光研磨剂。
优选地,所述液体去除组成物包括基于组成物的总重量以所指示的重量百分比存在的以下组分,其中组成物的所述组分的重量百分比的总和不超过100重量%。
在特别优选实施例中,水以在从约0.01重量%到约1重量%范围中的量存在,经去离子且未臭氧化,且经添加到组成物或残留存在于其中其它组分中的一者中。
含氟化物的化合物的适当来源包含(但不限于)氟化氢、氟化铵、氟硼酸、氟化四甲铵(TMAF)及三乙醇胺氢氟酸盐。或者,可使用氢氟化物的盐,包含氢氟化铵((NH4)HF2)及氢氟化四烷基铵((R)4NHF2,其中R是甲基、乙基、丙基、丁基、苯基、苄基或氟化C1-C4烷基)。本文还涵盖两种或更多种氟化物物质的组合。在优选实施例中,含氟化物的化合物包含氟化氢。值得注意地,氟化氢通常是经残余量的水运送,因此,即使其后未故意添加水,去除组成物中也可能存在水。优选地,含氟化物的化合物包括氟化氢或氢氟化铵。
有机溶剂物质被认为是充作溶剂且促进可能存在于ARC及/或蚀刻后残留物中的有机残留物的溶解。用于此组成物的适宜的溶剂物质包含(但不限于):四亚甲砜;直链或分支链C1-C6醇,包含(但不限于),甲醇、乙醇、1-丙醇、2-丙醇、1-丁醇、2-丁醇、叔丁醇、1-戊醇、己醇、环己醇、2-乙基-1-己醇;苯甲醇、呋喃甲醇;二醇类,例如乙二醇、二甘醇、丙二醇(1,2-丙二醇)、四亚甲二醇(1,4-丁二醇)、2,3-丁二醇、1,3-丁二醇及新戊二醇;或二醇醚,例如二甘醇单甲醚、三甘醇单甲醚、二甘醇单乙醚、三甘醇单乙醚、乙二醇单丙醚、乙二醇单丁醚、二甘醇单丁醚、三甘醇单丁醚、丙二醇甲基醚、二丙二醇甲基醚、三丙二醇甲基醚、丙二醇正丙基醚、二丙二醇正丙基醚、三丙二醇正丙基醚、丙二醇正丁基醚、二丙二醇正丁基醚及三丙二醇正丁基醚。其它有用溶剂是典型的极性溶剂,例如二甲基乙酰胺、甲酰胺、二甲基甲酰胺、1-甲基-2-吡咯烷酮、二甲亚砜、四氢呋喃甲醇(THFA)及其它极性溶剂。本文还涵盖两种或更多种溶剂物质的组合。优选地,有机溶剂包括1,4-丁二醇、正丁醇、乙二醇、丙二醇及其组合。
当存在时,腐蚀抑制剂降低对下层中的金属(例如,铜及/或钴)的侵蚀。腐蚀抑制剂可为任何适当类型,且可包含(但不限于)苯并三唑(BTA)、1,2,4-三唑(TAZ)、5-氨基四唑(ATA)、1-羟基苯并三唑、5-氨基-1,3,4-噻二唑-2-硫醇、3-氨基-1H-1,2,4-三唑、3,5-二氨基-1,2,4-三唑、甲苯三唑、5-苯基-苯并三唑、5-硝基-苯并三唑、3-氨基-5-巯基-1,2,4-三唑、1-氨基-1,2,4-三唑、2-(5-氨基-戊基)-苯并三唑、1-氨基-1,2,3-三唑、1-氨基-5-甲基-1,2,3-三唑、3-巯基-1,2,4-三唑、3-异丙基-1,2,4-三唑、5-苯基硫醇-苯并三唑、卤基-苯并三唑(卤基=F、Cl、Br或I)、萘并三唑、1H-四唑-5-乙酸、2-巯基苯并噻唑(2-MBT)、1-苯基-2-四唑啉-5-硫酮、2-巯基苯并咪唑(MBI)、4-甲基-2-苯基咪唑、2-巯基噻唑啉、2,4-二氨基-6-甲基-1,3,5-三嗪、噻唑、咪唑、苯并咪唑、三嗪、甲基四唑、试铋硫醇I(BismuthiolI)、1,3-二甲基-2-咪唑烷酮、1,5-五亚甲基四唑、1-苯基-5-巯基四唑、二胺甲基三嗪、咪唑啉硫酮、4-甲基-4H-1,2,4-三唑-3-硫醇、5-氨基-1,3,4-噻二唑-2-硫醇、苯并噻唑、磷酸三甲苯酯、吲唑、DNA碱基、吡唑、丙硫醇、抗坏血酸、硫脲、1,1,3,3-四甲基脲、尿素、尿素衍生物、尿酸、乙基黄原酸钾、甘胺酸、十二烷基苯磺酸(DDBSA)、酒石酸、N,N-二甲基乙酰乙酰胺、1-亚硝基-2-萘酚、聚山梨酸酯80(Tween 80)、十二烷基膦酸(DDPA)、乙二胺四乙酸(EDTA)、(1,2-亚环己基二氮基)四乙酸(CDTA)、二亚乙三胺五乙酸(DTPA)、2-膦酰丁烷-1,2,4-三羧酸(PBTCA)、乙二胺二琥珀酸及丙二胺四乙酸;膦酸;膦酸衍生物,例如羟基亚乙基二膦酸(HEDP)(Dequest 2010)、1-羟乙烷-1,1-二膦酸、氮基-三(亚甲基膦酸)(NTMP)、氨基三(亚甲基膦酸)(Dequest 2000)、二亚乙三胺五(亚甲基膦酸)(Dequest 2060S)、乙二胺四(亚甲基膦酸)(EDTMPA)及其组合。本文还涵盖两种或更多种腐蚀抑制剂的组合。优选地,腐蚀抑制剂(当存在时)包括DDPA。
电介质钝化剂(当存在时)经添加以改进液体去除组成物与含氮化物材料的兼容性,且包含(但不限于)丙二酸、硼酸、硼酸氢铵、硼酸盐(例如,五硼酸铵、四硼酸钠及硼酸氢铵)、3-羟基-2-萘甲酸、亚胺二乙酸及其组合。优选地,电介质钝化剂(当存在时)包括硼酸。
第一方面的组成物可进一步包含至少一种含硅化合物以降低含氟化物的化合物的活性。在一个实施例中,所述至少一种含硅化合物包括烷氧硅烷。所涵盖的烷氧硅烷具有通式SiR1R2R3R4,其中R1、R2、R3和R4彼此相同或不同,且选自由直链C1-C6烷基(例如,甲基、乙基、丙基、丁基、戊基、己基)、分支链C1-C6烷基、C1-C6烷氧基(例如,甲氧基、乙氧基、丙氧基、丁氧基、戊氧基、己氧基)、苯基及其组合所组成的群组。所属领域技术人员应明白,为了特征化为烷氧硅烷,R1、R2、R3或R4中的至少一者必须为C1-C6烷氧基。所涵盖的烷氧硅烷包括甲基三甲氧硅烷、二甲基二甲氧硅烷、苯基三甲氧硅烷、四乙氧硅烷(TEOS)、N-丙基三甲氧硅烷、N-丙基三乙氧硅烷、己基三甲氧硅烷、己基三乙氧硅烷及其组合。可替代烷氧硅烷或在其之外使用的其它含硅化合物包含六氟硅酸铵、硅酸钠、硅酸钾、四甲基硅酸铵(TMAS)、四乙酰氧硅烷、二-第三丁氧二乙酰氧硅烷、乙酰氧甲基三乙氧硅烷及其组合。优选地,所述含硅化合物包括TMAS。
在各种优选实施例中,去除组成物是以下列实施例A1-A9调配,其中所有百分比是基于配方的总重量以重量计:
实施例A1
实施例A2
实施例A3
实施例A4
实施例A5
实施例A6
实施例A7
实施例A8
实施例A9
本文所描述的液体去除组成物尤其可有效地从微电子装置衬底去除ARC层及/或蚀刻后残留物,对金属互连物质、低k电介质材料及/或含氮化物材料具有最低程度损坏。相关金属包含(但不限于)铜、钨、钴、铝、钽及钌。优选地,组成物去除大于95%的ARC材料及/或蚀刻后残留物且在40℃下具有低于约的钴蚀刻速率。
在又另一实施例中,液体去除组成物包括至少一种含氟化物的化合物、至少一种有机溶剂、电介质钝化剂及/或腐蚀抑制剂及/或至少一种含硅化合物中的至少一者、(任选地)水及残留材料,其中所述残留材料包含ARC及/或蚀刻后残留物。重要的是,残留材料可溶解及/或悬浮于本文所描述的液体去除组成物中。
本文所描述的液体去除组成物经由简单地添加相应成分及混合到均匀状态而容易地调配得。此外,可容易地将液体去除组成物调配为单一包装配方或在使用点处或使用点前混合的多份配方,例如,可将多份配方的个别份于工具处或于工具上游的储槽中混合。在本发明的宽广实务中,相应成分的浓度可在液体去除组成物的特定倍数内宽广地改变,即更稀或更浓,且应明白,本发明的液体去除组成物可变化及替代地包括与本文的揭示内容一致的成分的任何组合、由其组成或基本上由其组成。
因此,本发明的另一方面涉及一种套组,其包含一或多个容器中的适于形成本文所描述的组成物的一或多种组分。例如,所述套组可包含一或多个容器中的至少一种含氟化物的化合物、至少一种有机溶剂,及电介质钝化剂及/或腐蚀抑制剂及/或至少一种含硅化合物中的至少一者,其用于在工厂或使用点处与水结合。或者,所述套组可包含一或多个容器中的至少一种含氟化物的化合物、及电介质钝化剂及/或腐蚀抑制剂及/或至少一种含硅化合物中的至少一者,其用于在工厂或使用点处与至少一种溶剂结合。在又另一实施例中,所述套组可包含一或多个容器中的至少一种含氟化物的化合物、第一有机溶剂,及电介质钝化剂及/或腐蚀抑制剂及/或至少一种含硅化合物中的至少一者,其用于在工厂或使用点处与更多第一有机溶剂及/或第二有机溶剂结合。套组的容器必须适于存放及运送所述液体去除组成物,例如,容器(先进技术材料有限公司(Advanced TechnologyMaterials,Inc.),美国康涅狄格州丹伯里)。
容纳去除组成物的组分的一或多个容器优选包含用于使所述一或多个容器中的组分流体连通以进行掺混及配送的构件。举例来说,参考容器,可对所述一或多个容器中的衬里的外侧施加气体压力,以使得衬里的至少一部分的内容物排出,且因此可流体连通而进行掺混及配送。或者,可对常规可加压容器的顶部空间施加气体压力,或可使用泵以实现流体连通。此外,系统优选包含用于将经掺混的清洗组成物配送到工艺工具的配送口。
优选使用基本上化学惰性、不含杂质、可挠性及弹性的聚合膜材料,例如高密度聚乙烯,以制造所述一或多个容器的衬里。理想的衬里材料不需要共挤塑或屏障层来进行加工,且不含任何会不利影响待置于衬里中的组分的纯度需求的颜料、UV抑制剂或加工剂。理想衬里材料的清单包含包括纯粹(无添加剂)聚乙烯、纯粹聚四氟乙烯(PTFE)、聚丙烯、聚氨基甲酸酯、聚二氯亚乙烯、聚氯乙烯、聚缩醛、聚苯乙烯、聚丙烯腈、聚丁烯等等的膜。此类衬里材料的优选厚度是在从约5密尔(mil)(0.005英寸)到约30密尔(0.030英寸)的范围中,例如,20密尔(0.020英寸)的厚度。
关于套组的容器,以引用方式将以下专利及专利申请案的揭示内容的相应全部内容并入本文:第7,188,644号美国专利,标题“最小化超纯液体中的颗粒产生的装置及方法(APPARATUS AND METHOD FOR MINIMIZING THE GENERATION OF PARTICLES IN ULTRAPURELIQUIDS)”;第6,698,619号美国专利,标题“可回收及再利用的桶中袋流体存放及配送容器系统(RETURNABLE AND REUSABLE,BAG-IN-DRUM FLUID STORAGE AND DISPENSINGCONTAINER SYSTEM)”;及2007年5月9日以约翰E.Q.休斯(John E.Q.Hughes)的名义提出申请的第60/916,966号美国专利申请案,标题“材料掺混及分布用的系统及方法(SYSTEMSAND METHODS FOR MATERIAL BLENDING AND DISTRIBUTION)”;及2008年5月9日以先进技术材料有限公司(Advanced Technology Materials,Inc.)的名义提出申请的PCT/US08/63276,标题“材料掺混及分布用的系统及方法(SYSTEMS AND METHODS FOR MATERIALBLENDING AND DISTRIBUTION)”。
在去除应用中,去除组成物是以任何适当方式涂布到待清洗的微电子装置,例如,通过将去除组成物喷涂于微电子装置的表面上、通过将微电子装置浸泡于一定量的清洗组成物中、通过使待清洗的微电子装置与经去除组成物饱和的另一材料(例如,垫或纤维吸收性涂布器元件)接触、通过使微电子装置与循环的去除组成物接触或通过凭其使去除组成物与待清洗的微电子装置进行去除接触的任何其它适当手段、方式或技术。
当应用到半导体制造操作时,本文所描述的液体去除组成物可有效用于从其上具有ARC及/或蚀刻后残留材料的微电子装置结构去除所述材料。所述去除组成物通过其针对所述ARC材料及/或蚀刻后残留材料相对于其它可能存在于微电子装置上且暴露于去除组成物的材料(例如低k电介质结构、金属化、屏障层等)的选择性,以高度有效率的方式实现ARC及/或蚀刻后残留材料的至少部分去除。此外,所述去除组成物具有低含量的水,例如,低于约1重量百分比,且因此,其可与例如铜、铝及钴的金属互连层兼容。在本发明组成物存在下的铜及/或钴蚀刻速率优选低于更优选地低于 最优选地低于
在使用去除组成物于从其上具有ARC材料及/或蚀刻后残留物的微电子装置衬底去除所述材料及/或蚀刻后残留物时,通常使所述组成物与装置衬底在从约20℃到约80℃范围中的温度下接触从约1到约60分钟,优选从约20到约30分钟的时间。此类接触时间及温度是说明性的,可使用任何其它可有效地从装置衬底至少部分地去除ARC材料及/或蚀刻后残留物的适宜时间及温度条件。如本文所定义,“至少部分去除”对应于去除至少50%的ARC材料及/或蚀刻后残留物,优选去除至少80%。最优选地,使用本文所描述的液体去除组成物去除至少90%的ARC材料及/或蚀刻后残留物。
在实现理想的清洗作用后,可容易地将去除组成物从其先前经涂布的装置去除,例如,通过冲洗、洗涤或其它去除步骤,这可能在本文所描述的组成物的指定最终应用中所需且有效。举例来说,可使用去离子水冲洗装置。
又再一实施例涉及制造包括微电子装置的物件的方法,所述方法包括使微电子装置与液体去除组成物接触足够的时间,以从其上具有ARC及/或蚀刻后残留材料的微电子装置去除所述材料及/或蚀刻后残留材料,及将所述微电子装置并入到所述物件中,其中所述液体去除组成物包含至少一种含氟化物的化合物、至少一种有机溶剂,电介质钝化剂及/或腐蚀抑制剂及/或至少一种含硅化合物中的至少一者及(任选地)水。在本发明组成物存在下的低k电介质及/或氮化物蚀刻速率优选低于更优选地低于最优选地低于
另一方面涉及一种包括去除组成物、微电子装置晶片及ARC材料及/或蚀刻后残留物的制造物件,其中所述去除组成物包括至少一种含氟化物的化合物、至少一种有机溶剂,电介质钝化剂及/或腐蚀抑制剂及/或至少一种含硅化合物中的至少一者及(任选地)水。
本发明的特征及优点由以下讨论的说明性实例进行更完整展示。
实例1
制备包括至少一种含氟化物的化合物(即HF,其含有自然存在水)、至少一种有机溶剂及至少一种电介质钝化剂的去除组成物,并确定TiON(在20分钟时)及SiN(在60分钟时)的蚀刻速率以及来自钴试样的钴损耗(在5分钟时)。所述实验均是在35℃下进行。使用TiON的蚀刻速率来仿真含Ti残留物及因此其从表面的去除。结果提供于下表1中。
表1:配方A-G
实例2
制备包括至少一种含氟化物的化合物、至少一种有机溶剂及至少一种电介质钝化剂及/或至少一种腐蚀抑制剂的去除组成物,并确定TiON(在20分钟时)及SiN(在30分钟时)的蚀刻速率以及来自钴试样的钴损耗(在5分钟时)。除非另外指明,否则所述实验均是在40℃下进行。使用TiON的蚀刻速率来仿真含Ti残留物及因此其从表面的去除。结果提供于下表2中。
表2:配方H-FF
DDBSA=十二烷基苯磺酸
TA=酒石酸
DMA=N,N-二甲基乙酰乙酰胺
NN=1-亚硝基-2-萘酚
Bis=试铋硫醇
DDPA=十二烷基膦酸
CDTA=(1,2-伸环己基二氮基)四乙酸
DTPA=二伸乙三胺五乙酸
HEDP=羟基亚乙基二膦酸
NTMP=氮基-三(亚甲基膦酸)
可知DDPA是所述受测试者中最有效的腐蚀抑制剂,但是若干其它者也可有效地使SiN去除以及钴损耗最小化。腐蚀抑制剂的存在促进Co损耗的降低同时维持清洗能力。
实例3
制备包括至少一种含氟化物的化合物、至少一种有机溶剂、至少一种腐蚀抑制剂及至少一种含硅化合物的去除组成物,并确定TiON(在20分钟时)及SiN(在30分钟时)的蚀刻速率以及来自钴试样的钴损耗(在5分钟时)。所述实验均是在40℃下进行。结果提供于下表3中。
表3:配方GG-II
可知TMAS有助于保护SiN,与当存在电介质钝化剂时所观察到的相似。
实例4
制备包括至少一种含氟化物的化合物、至少一种有机溶剂、至少一种电介质钝化剂及至少一种腐蚀抑制剂的去除组成物,并确定TiON(在20分钟时)及SiN(在60分钟时)的蚀刻速率以及来自钴试样的钴损耗(在5分钟时)。所述实验均是在40℃下进行。结果提供于下表4。
表4:配方JJ-AB
可知存在电介质钝化剂(即硼酸)对最小化钴损耗及氮化硅蚀刻速率有最大影响。
实例5
制备包括至少一种含氟化物的化合物、丙二醇(PG)及至少一种电介质钝化剂及/或至少一种腐蚀抑制剂及/或至少一种含硅化合物的去除组成物,并确定TiON(在20分钟时)及SiN(在30分钟时)的蚀刻速率以及来自钴试样的钴损耗(在5分钟时)。所述实验均是在40℃下进行。结果提供于下表5中。
表5:配方AC-AI
应注意,配方AE于45℃下可与Co及SiN兼容,而不会牺牲清洗效力。
实例6
制备包括0.25重量%氟化氢铵、29.25重量%正丁醇、乙二醇(EG)、至少一种电介质钝化剂及/或至少一种腐蚀抑制剂的去除组成物,并确定TiON(在20分钟时)及SiN(在60分钟时)的蚀刻速率以及来自钴试样的钴损耗(在5分钟时)。所述实验均是在35℃下进行。结果提供于下表6中。
表6:配方AJ-AL
可知硼酸改进SiN兼容性,且DDPA/Tween 80组合帮助减小起始Co损耗。
实例7
制备包括至少一种含氟化物的化合物、29.250正丁醇及至少一种额外有机溶剂的去除组成物,并确定TiON(在20分钟时)及SiN(在60分钟时)的蚀刻速率以及来自钴试样的钴损耗(在5分钟时)。所述实验均是在35℃下进行。结果提供于下表7中。
表7:配方AN-AS
可知起始Co损耗随TMAF的量增加而减小,且随作为额外有机溶剂的EG再进一步地减小。SiN蚀刻速率随蚀刻剂更换而显著地减小。
因此,虽然本文中已参考本发明的特定方面、特征及说明性实施例描述了本发明,但是将明白本发明的效用并不因此受限,而是可延伸到涵盖许多其它方面、特征及实施例。因此,所附权利要求书意欲相应地经广泛解释为包含在其精神及范围内的所有此类方面、特征及实施例。
Claims (12)
1.一种液体去除组成物,其包括约0.01重量%到约25重量%的至少一种含氟化物的化合物、约0.01重量%到约99.9重量%的至少一种有机溶剂、约0.01重量%到约10重量%的水、约0.01重量%到约20重量%的至少一种腐蚀抑制剂及约0.01重量%到约2重量%的电介质钝化剂及/或含硅化合物中的至少一者,所述电介质钝化剂包括选自由以下项组成的群组的物质:硼酸、硼酸氢铵、五硼酸铵、四硼酸钠、硼酸氢铵、3-羟基-2-萘甲酸、亚氨二乙酸及其组合,其中所述组合物不含氧化剂,并且其中所述液体去除组成物可用于从其上具有抗反射涂层ARC材料及/或蚀刻后残留物的微电子装置去除所述材料及/或残留物。
2.根据权利要求1所述的液体去除组成物,其中所述腐蚀抑制剂包括选自由以下项组成的群组的物质:苯并三唑(BTA)、1,2,4-三唑(TAZ)、5-氨基四唑(ATA)、1-羟基苯并三唑、5-氨基-1,3,4-噻二唑-2-硫醇、3-氨基-1H-1,2,4-三唑、3,5-二氨基-1,2,4-三唑、甲苯三唑、5-苯基-苯并三唑、5-硝基-苯并三唑、3-氨基-5-巯基-1,2,4-三唑、1-氨基-1,2,4-三唑、2-(5-氨基-戊基)-苯并三唑、1-氨基-1,2,3-三唑、1-氨基-5-甲基-1,2,3-三唑、3-巯基-1,2,4-三唑、3-异丙基-1,2,4-三唑、5-苯基硫醇苯并三唑、卤基-苯并三唑(卤基=F、Cl、Br或I)、萘并三唑、1H-四唑-5-乙酸、2-巯基苯并噻唑(2-MBT)、1-苯基-2-四唑啉-5-硫酮、2-巯基苯并咪唑(MBI)、4-甲基-2-苯基咪唑、2-巯基噻唑啉、2,4-二氨基-6-甲基-1,3,5-三嗪、噻唑、咪唑、苯并咪唑、三嗪、甲基四唑、试铋硫醇I(BismuthiolI)、1,3-二甲基-2-咪唑烷酮、1,5-五亚甲基四唑、1-苯基-5-巯基四唑、二氨甲基三嗪、咪唑啉硫酮、4-甲基-4H-1,2,4-三唑-3-硫醇、5-氨基-1,3,4-噻二唑-2-硫醇、苯并噻唑、磷酸三甲苯酯、吲唑、DNA碱基、吡唑、丙硫醇、抗坏血酸、硫脲、1,1,3,3-四甲基脲、尿素、尿素衍生物、尿酸、乙基黄原酸钾、甘氨酸、十二烷基苯磺酸(DDBSA)、酒石酸、N,N-二甲基乙酰乙酰胺、1-亚硝基-2-萘酚、聚山梨酸酯80、十二烷基膦酸(DDPA)、乙二胺四乙酸(EDTA)、(1,2-亚环己基二氮基)四乙酸(CDTA)、二亚乙三胺五乙酸(DTPA)、2-膦酰丁烷-1,2,4-三羧酸(PBTCA)、乙二胺二琥珀酸、丙二胺四乙酸;膦酸;羟基亚乙基二膦酸(HEDP)、1-羟乙烷-1,1-二膦酸、氮基-三(亚甲基膦酸)(NTMP)、氨基三(亚甲基膦酸)、二亚乙三胺五(亚甲基膦酸)、乙二胺四(亚甲基膦酸)(EDTMPA)及其组合。
3.根据权利要求1所述的液体去除组成物,其包括约0.01重量%到约2重量%的至少一种含硅化合物,其中所述含硅化合物包括选自由以下项组成的群组的物质:甲基三甲氧硅烷、二甲基二甲氧硅烷、苯基三甲氧硅烷、四乙氧硅烷(TEOS)、N-丙基三甲氧硅烷、N-丙基三乙氧硅烷、己基三甲氧硅烷、己基三乙氧硅烷、六氟硅酸铵、硅酸钠、硅酸钾、四甲基硅酸铵(TMAS)、四乙酰氧硅烷、二-叔丁氧二乙酰氧硅烷、乙酰氧甲基三乙氧硅烷及其组合。
4.根据权利要求1所述的液体去除组成物,其中所述至少一种有机溶剂包括选自由以下项组成的群组的化合物:四亚甲砜、甲醇、乙醇、1-丙醇、2-丙醇、1-丁醇、2-丁醇、叔丁醇、1-戊醇、己醇、环己醇、2-乙基-1-己醇、苯甲醇、呋喃甲醇、乙二醇、二甘醇、丙二醇(1,2-丙二醇)、四亚甲二醇(1,4-丁二醇)、2,3-丁二醇、1,3-丁二醇、新戊二醇、二甘醇单甲醚、三甘醇单甲醚、二甘醇单乙醚、三甘醇单乙醚、乙二醇单丙醚、乙二醇单丁醚、二甘醇单丁醚、三甘醇单丁醚、丙二醇甲基醚、二丙二醇甲基醚、三丙二醇甲基醚、丙二醇正丙基醚、二丙二醇正丙基醚、三丙二醇正丙基醚、丙二醇正丁基醚、二丙二醇正丁基醚及三丙二醇正丁基醚、二甲基乙酰胺、甲酰胺、二甲基甲酰胺、1-甲基-2-吡咯烷酮、二甲亚砜、四氢呋喃甲醇(THFA)及其组合。
5.根据权利要求1所述的液体去除组成物,其中至少一种有机溶剂包括选自由以下项组成的群组的化合物:乙二醇、丙二醇、2-丙醇、1-丙醇、1-丁醇、1,4-丁二醇、1-戊醇及其组合。
6.根据权利要求1所述的液体去除组成物,其中所述至少一种有机溶剂包括选自由以下项组成的群组的化合物:1-丁醇、1,4-丁二醇及其组合。
7.根据权利要求1所述的液体去除组成物,其包括约0.01重量%到约2重量%的至少一种电介质钝化剂和约0.01重量%到约2重量%的至少一种含硅化合物。
8.根据权利要求1所述的液体去除组成物,其中所述组合物包括水,并且其中水是基于所述组成物的总重量以约0.01重量%到约1重量%的量存在。
9.根据权利要求1所述的液体去除组成物,其中所述至少一种含氟化物的化合物包括选自由以下项组成的群组的物质:氟化氢、氟化铵、氟硼酸、氟化四甲铵(TMAF)、三乙醇胺氢氟酸盐、氢氟化铵((NH4)HF2)、氢氟化四烷基铵((R)4NHF2)及其组合。
10.根据权利要求1所述的液体去除组成物,其中所述组成物的pH是在从约1到约5的范围中。
12.根据权利要求1所述的液体去除组成物,其进一步包括选自由ARC残留物、蚀刻后残留物及其组合所组成的群组的残留材料。
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