TW200727446A - Stack type semiconductor device manufacturing method and stack type electronic component manufacturing method - Google Patents

Stack type semiconductor device manufacturing method and stack type electronic component manufacturing method

Info

Publication number
TW200727446A
TW200727446A TW095107613A TW95107613A TW200727446A TW 200727446 A TW200727446 A TW 200727446A TW 095107613 A TW095107613 A TW 095107613A TW 95107613 A TW95107613 A TW 95107613A TW 200727446 A TW200727446 A TW 200727446A
Authority
TW
Taiwan
Prior art keywords
stack type
semiconductor element
mpa
bonding
semiconductor
Prior art date
Application number
TW095107613A
Other languages
English (en)
Chinese (zh)
Other versions
TWI295500B (https=
Inventor
Atsushi Yoshimura
Tadanobu Ookubo
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2005092596A external-priority patent/JP4594777B2/ja
Priority claimed from JP2005092595A external-priority patent/JP4612450B2/ja
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW200727446A publication Critical patent/TW200727446A/zh
Application granted granted Critical
Publication of TWI295500B publication Critical patent/TWI295500B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H10P72/7442—Separation by peeling
    • H10P72/7444—Separation by peeling using a peeling wedge, a knife or a bar
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01331—Manufacture or treatment of die-attach connectors using blanket deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H10W72/07338—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy hardening the adhesive by curing, e.g. thermosetting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Dicing (AREA)
  • Die Bonding (AREA)
TW095107613A 2005-03-28 2006-03-07 Stack type semiconductor device manufacturing method and stack type electronic component manufacturing method TW200727446A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005092596A JP4594777B2 (ja) 2005-03-28 2005-03-28 積層型電子部品の製造方法
JP2005092595A JP4612450B2 (ja) 2005-03-28 2005-03-28 積層型半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW200727446A true TW200727446A (en) 2007-07-16
TWI295500B TWI295500B (https=) 2008-04-01

Family

ID=37082411

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095107613A TW200727446A (en) 2005-03-28 2006-03-07 Stack type semiconductor device manufacturing method and stack type electronic component manufacturing method

Country Status (3)

Country Link
US (2) US7615413B2 (https=)
KR (1) KR100796884B1 (https=)
TW (1) TW200727446A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8592258B2 (en) 2007-12-27 2013-11-26 United Test And Assembly Center, Ltd. Semiconductor package and method of attaching semiconductor dies to substrates
US10756060B2 (en) 2018-07-12 2020-08-25 Toshiba Memory Corporation Semiconductor device
TWI741973B (zh) * 2015-12-22 2021-10-11 美商英特爾股份有限公司 層積體之製造方法，層積體及多層電路基板

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JP2006310846A (ja) * 2005-04-28 2006-11-09 Ls Cable Ltd 半導体用ダイシングダイ接着フィルム
JP4621595B2 (ja) * 2006-01-11 2011-01-26 株式会社東芝 半導体装置の製造方法
JP4881044B2 (ja) * 2006-03-16 2012-02-22 株式会社東芝 積層型半導体装置の製造方法
JP4719042B2 (ja) * 2006-03-16 2011-07-06 株式会社東芝 半導体装置の製造方法
US20080128879A1 (en) * 2006-12-01 2008-06-05 Hem Takiar Film-on-wire bond semiconductor device
US20080131998A1 (en) * 2006-12-01 2008-06-05 Hem Takiar Method of fabricating a film-on-wire bond semiconductor device
US20090001599A1 (en) * 2007-06-28 2009-01-01 Spansion Llc Die attachment, die stacking, and wire embedding using film
TWI358797B (en) * 2007-09-11 2012-02-21 Advanced Semiconductor Eng A wireless communication module with power amplifi
JP2009302212A (ja) * 2008-06-11 2009-12-24 Fujitsu Microelectronics Ltd 半導体装置及びその製造方法
JP5089560B2 (ja) * 2008-11-28 2012-12-05 リンテック株式会社 半導体チップ積層体および半導体チップ積層用接着剤組成物
TWI382506B (zh) * 2009-09-24 2013-01-11 力成科技股份有限公司 中央銲墊型晶片之主動面朝上堆疊方法與構造
JP5384443B2 (ja) * 2010-07-28 2014-01-08 日東電工株式会社 フリップチップ型半導体裏面用フィルム、ダイシングテープ一体型半導体裏面用フィルム、半導体装置の製造方法、及び、フリップチップ型半導体装置
JP2013008915A (ja) * 2011-06-27 2013-01-10 Toshiba Corp 基板加工方法及び基板加工装置
JP5472275B2 (ja) * 2011-12-14 2014-04-16 株式会社村田製作所 エキスパンド装置及び部品の製造方法
KR20130073190A (ko) * 2011-12-23 2013-07-03 제일모직주식회사 다이싱 다이본딩 필름 및 반도체 장치
JP5828881B2 (ja) * 2013-12-24 2015-12-09 日東電工株式会社 接着フィルム、ダイシング・ダイボンドフィルム、半導体装置の製造方法及び半導体装置
JP2018056539A (ja) * 2016-09-23 2018-04-05 東芝メモリ株式会社 半導体装置及びその製造方法
JP2019057575A (ja) * 2017-09-20 2019-04-11 東芝メモリ株式会社 半導体装置の製造方法および半導体装置
CN111656505B (zh) * 2018-01-25 2024-01-30 库利克和索夫工业公司 用于焊接机的焊接工具、用于焊接半导体元件的焊接机及相关方法
JP2023121355A (ja) * 2022-02-21 2023-08-31 キオクシア株式会社 半導体装置および半導体装置の製造方法

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JPH08288455A (ja) 1995-04-11 1996-11-01 Oki Electric Ind Co Ltd 半導体装置およびその製造方法
JP3481444B2 (ja) 1998-01-14 2003-12-22 シャープ株式会社 半導体装置及びその製造方法
JP2001217384A (ja) 2000-02-01 2001-08-10 Sony Corp 積層型半導体装置の製造方法、及び積層型半導体装置
JP2001308262A (ja) * 2000-04-26 2001-11-02 Mitsubishi Electric Corp 樹脂封止ｂｇａ型半導体装置
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JP3913481B2 (ja) 2001-01-24 2007-05-09 シャープ株式会社 半導体装置および半導体装置の製造方法
JP2003041209A (ja) 2001-07-30 2003-02-13 Hitachi Chem Co Ltd 接着シートならびに半導体装置およびその製造方法
JP4800524B2 (ja) 2001-09-10 2011-10-26 ルネサスエレクトロニクス株式会社 半導体装置の製造方法、及び、製造装置
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JP2004311848A (ja) 2003-04-09 2004-11-04 Nitta Ind Corp 半導体装置の製造方法、保護用粘着テープおよびダイボンド用接着剤付き支持用粘着テープ
JP4114567B2 (ja) 2003-07-30 2008-07-09 日立化成工業株式会社 半導体装置およびその製造方法
JP3933118B2 (ja) 2003-10-02 2007-06-20 ソニー株式会社 半導体装置の製造方法および半導体装置の製造装置
MY138566A (en) * 2004-03-15 2009-06-30 Hitachi Chemical Co Ltd Dicing/die bonding sheet
US20050205981A1 (en) 2004-03-18 2005-09-22 Kabushiki Kaisha Toshiba Stacked electronic part
JP2005327789A (ja) 2004-05-12 2005-11-24 Sharp Corp ダイシング・ダイボンド兼用粘接着シートおよびこれを用いた半導体装置の製造方法
JP2006128169A (ja) 2004-10-26 2006-05-18 Fujitsu Ltd 半導体装置及び半導体装置の製造方法
US7560821B2 (en) * 2005-03-24 2009-07-14 Sumitomo Bakelite Company, Ltd Area mount type semiconductor device, and die bonding resin composition and encapsulating resin composition used for the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8592258B2 (en) 2007-12-27 2013-11-26 United Test And Assembly Center, Ltd. Semiconductor package and method of attaching semiconductor dies to substrates
TWI741973B (zh) * 2015-12-22 2021-10-11 美商英特爾股份有限公司 層積體之製造方法，層積體及多層電路基板
US10756060B2 (en) 2018-07-12 2020-08-25 Toshiba Memory Corporation Semiconductor device

Also Published As

Publication number Publication date
US20100062566A1 (en) 2010-03-11
US7615413B2 (en) 2009-11-10
TWI295500B (https=) 2008-04-01
KR20060104912A (ko) 2006-10-09
US20060226520A1 (en) 2006-10-12
KR100796884B1 (ko) 2008-01-22
US7785926B2 (en) 2010-08-31

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