KR100796884B1 - 적층형 반도체 장치의 제조 방법 및 적층형 전자 부품의제조 방법 - Google Patents

적층형 반도체 장치의 제조 방법 및 적층형 전자 부품의제조 방법 Download PDF

Info

Publication number
KR100796884B1
KR100796884B1 KR1020060027518A KR20060027518A KR100796884B1 KR 100796884 B1 KR100796884 B1 KR 100796884B1 KR 1020060027518 A KR1020060027518 A KR 1020060027518A KR 20060027518 A KR20060027518 A KR 20060027518A KR 100796884 B1 KR100796884 B1 KR 100796884B1
Authority
KR
South Korea
Prior art keywords
semiconductor element
adhesive layer
electronic component
semiconductor
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020060027518A
Other languages
English (en)
Korean (ko)
Other versions
KR20060104912A (ko
Inventor
아쯔시 요시무라
다다노부 오오꾸보
Original Assignee
가부시끼가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2005092596A external-priority patent/JP4594777B2/ja
Priority claimed from JP2005092595A external-priority patent/JP4612450B2/ja
Application filed by 가부시끼가이샤 도시바 filed Critical 가부시끼가이샤 도시바
Publication of KR20060104912A publication Critical patent/KR20060104912A/ko
Application granted granted Critical
Publication of KR100796884B1 publication Critical patent/KR100796884B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H10P72/7442—Separation by peeling
    • H10P72/7444—Separation by peeling using a peeling wedge, a knife or a bar
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01331—Manufacture or treatment of die-attach connectors using blanket deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H10W72/07338—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy hardening the adhesive by curing, e.g. thermosetting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Dicing (AREA)
  • Die Bonding (AREA)
KR1020060027518A 2005-03-28 2006-03-27 적층형 반도체 장치의 제조 방법 및 적층형 전자 부품의제조 방법 Expired - Fee Related KR100796884B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005092596A JP4594777B2 (ja) 2005-03-28 2005-03-28 積層型電子部品の製造方法
JPJP-P-2005-00092595 2005-03-28
JPJP-P-2005-00092596 2005-03-28
JP2005092595A JP4612450B2 (ja) 2005-03-28 2005-03-28 積層型半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR20060104912A KR20060104912A (ko) 2006-10-09
KR100796884B1 true KR100796884B1 (ko) 2008-01-22

Family

ID=37082411

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060027518A Expired - Fee Related KR100796884B1 (ko) 2005-03-28 2006-03-27 적층형 반도체 장치의 제조 방법 및 적층형 전자 부품의제조 방법

Country Status (3)

Country Link
US (2) US7615413B2 (https=)
KR (1) KR100796884B1 (https=)
TW (1) TW200727446A (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006310846A (ja) * 2005-04-28 2006-11-09 Ls Cable Ltd 半導体用ダイシングダイ接着フィルム
JP4621595B2 (ja) * 2006-01-11 2011-01-26 株式会社東芝 半導体装置の製造方法
JP4881044B2 (ja) * 2006-03-16 2012-02-22 株式会社東芝 積層型半導体装置の製造方法
JP4719042B2 (ja) * 2006-03-16 2011-07-06 株式会社東芝 半導体装置の製造方法
US20080128879A1 (en) * 2006-12-01 2008-06-05 Hem Takiar Film-on-wire bond semiconductor device
US20080131998A1 (en) * 2006-12-01 2008-06-05 Hem Takiar Method of fabricating a film-on-wire bond semiconductor device
US20090001599A1 (en) * 2007-06-28 2009-01-01 Spansion Llc Die attachment, die stacking, and wire embedding using film
TWI358797B (en) * 2007-09-11 2012-02-21 Advanced Semiconductor Eng A wireless communication module with power amplifi
US20090194871A1 (en) 2007-12-27 2009-08-06 Utac - United Test And Assembly Test Center, Ltd. Semiconductor package and method of attaching semiconductor dies to substrates
JP2009302212A (ja) * 2008-06-11 2009-12-24 Fujitsu Microelectronics Ltd 半導体装置及びその製造方法
JP5089560B2 (ja) * 2008-11-28 2012-12-05 リンテック株式会社 半導体チップ積層体および半導体チップ積層用接着剤組成物
TWI382506B (zh) * 2009-09-24 2013-01-11 力成科技股份有限公司 中央銲墊型晶片之主動面朝上堆疊方法與構造
JP5384443B2 (ja) * 2010-07-28 2014-01-08 日東電工株式会社 フリップチップ型半導体裏面用フィルム、ダイシングテープ一体型半導体裏面用フィルム、半導体装置の製造方法、及び、フリップチップ型半導体装置
JP2013008915A (ja) * 2011-06-27 2013-01-10 Toshiba Corp 基板加工方法及び基板加工装置
JP5472275B2 (ja) * 2011-12-14 2014-04-16 株式会社村田製作所 エキスパンド装置及び部品の製造方法
KR20130073190A (ko) * 2011-12-23 2013-07-03 제일모직주식회사 다이싱 다이본딩 필름 및 반도체 장치
JP5828881B2 (ja) * 2013-12-24 2015-12-09 日東電工株式会社 接着フィルム、ダイシング・ダイボンドフィルム、半導体装置の製造方法及び半導体装置
TWI741973B (zh) * 2015-12-22 2021-10-11 美商英特爾股份有限公司 層積體之製造方法，層積體及多層電路基板
JP2018056539A (ja) * 2016-09-23 2018-04-05 東芝メモリ株式会社 半導体装置及びその製造方法
JP2019057575A (ja) * 2017-09-20 2019-04-11 東芝メモリ株式会社 半導体装置の製造方法および半導体装置
CN111656505B (zh) * 2018-01-25 2024-01-30 库利克和索夫工业公司 用于焊接机的焊接工具、用于焊接半导体元件的焊接机及相关方法
JP7042713B2 (ja) 2018-07-12 2022-03-28 キオクシア株式会社 半導体装置
JP2023121355A (ja) * 2022-02-21 2023-08-31 キオクシア株式会社 半導体装置および半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010099722A (ko) * 2000-04-26 2001-11-09 다니구찌 이찌로오, 기타오카 다카시 수지 봉지 칩 적층형 반도체 장치
JP2004311848A (ja) 2003-04-09 2004-11-04 Nitta Ind Corp 半導体装置の製造方法、保護用粘着テープおよびダイボンド用接着剤付き支持用粘着テープ
JP2005050902A (ja) 2003-07-30 2005-02-24 Hitachi Chem Co Ltd 半導体装置およびその製造方法、ならびに半導体装置に用いられるダイボンディング材

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5220200A (en) 1990-12-10 1993-06-15 Delco Electronics Corporation Provision of substrate pillars to maintain chip standoff
AU4242693A (en) 1992-05-11 1993-12-13 Nchip, Inc. Stacked devices for multichip modules
JPH08288455A (ja) 1995-04-11 1996-11-01 Oki Electric Ind Co Ltd 半導体装置およびその製造方法
JP3481444B2 (ja) 1998-01-14 2003-12-22 シャープ株式会社 半導体装置及びその製造方法
JP2001217384A (ja) 2000-02-01 2001-08-10 Sony Corp 積層型半導体装置の製造方法、及び積層型半導体装置
US6333562B1 (en) 2000-07-13 2001-12-25 Advanced Semiconductor Engineering, Inc. Multichip module having stacked chip arrangement
JP3913481B2 (ja) 2001-01-24 2007-05-09 シャープ株式会社 半導体装置および半導体装置の製造方法
JP2003041209A (ja) 2001-07-30 2003-02-13 Hitachi Chem Co Ltd 接着シートならびに半導体装置およびその製造方法
JP4800524B2 (ja) 2001-09-10 2011-10-26 ルネサスエレクトロニクス株式会社 半導体装置の製造方法、及び、製造装置
JP2003179200A (ja) 2001-12-10 2003-06-27 Shinko Electric Ind Co Ltd 半導体装置およびその製造方法
JP2003218316A (ja) 2002-01-10 2003-07-31 Ficta Technology Inc マルチチップパッケージ構造及び製造方法
JP3912223B2 (ja) 2002-08-09 2007-05-09 富士通株式会社 半導体装置及びその製造方法
JP2004193363A (ja) 2002-12-11 2004-07-08 Fujitsu Ltd 半導体装置及びその製造方法
JP4316253B2 (ja) 2003-02-18 2009-08-19 リンテック株式会社 ウエハダイシング・接着用シートおよび半導体装置の製造方法
JP3933118B2 (ja) 2003-10-02 2007-06-20 ソニー株式会社 半導体装置の製造方法および半導体装置の製造装置
MY138566A (en) * 2004-03-15 2009-06-30 Hitachi Chemical Co Ltd Dicing/die bonding sheet
US20050205981A1 (en) 2004-03-18 2005-09-22 Kabushiki Kaisha Toshiba Stacked electronic part
JP2005327789A (ja) 2004-05-12 2005-11-24 Sharp Corp ダイシング・ダイボンド兼用粘接着シートおよびこれを用いた半導体装置の製造方法
JP2006128169A (ja) 2004-10-26 2006-05-18 Fujitsu Ltd 半導体装置及び半導体装置の製造方法
US7560821B2 (en) * 2005-03-24 2009-07-14 Sumitomo Bakelite Company, Ltd Area mount type semiconductor device, and die bonding resin composition and encapsulating resin composition used for the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010099722A (ko) * 2000-04-26 2001-11-09 다니구찌 이찌로오, 기타오카 다카시 수지 봉지 칩 적층형 반도체 장치
JP2004311848A (ja) 2003-04-09 2004-11-04 Nitta Ind Corp 半導体装置の製造方法、保護用粘着テープおよびダイボンド用接着剤付き支持用粘着テープ
JP2005050902A (ja) 2003-07-30 2005-02-24 Hitachi Chem Co Ltd 半導体装置およびその製造方法、ならびに半導体装置に用いられるダイボンディング材

Also Published As

Publication number Publication date
US20100062566A1 (en) 2010-03-11
US7615413B2 (en) 2009-11-10
TWI295500B (https=) 2008-04-01
KR20060104912A (ko) 2006-10-09
TW200727446A (en) 2007-07-16
US20060226520A1 (en) 2006-10-12
US7785926B2 (en) 2010-08-31

Similar Documents

Publication Publication Date Title
KR100796884B1 (ko) 적층형 반도체 장치의 제조 방법 및 적층형 전자 부품의제조 방법
JP4719042B2 (ja) 半導体装置の製造方法
JP4188337B2 (ja) 積層型電子部品の製造方法
JP5918664B2 (ja) 積層型半導体装置の製造方法
KR100923596B1 (ko) 적층형 반도체 장치
US20150214193A1 (en) Stacked electronic component and manufacturing method thereof
US10026679B2 (en) Process for manufacturing a package for a surface-mount semiconductor device and semiconductor device
US20090246918A1 (en) Method of manufacturing semiconductor device
KR101493340B1 (ko) 땜납 전사기재, 땜납 전사기재의 제조방법 및 땜납 전사방법
KR100804856B1 (ko) 반도체 장치의 제조 방법
CN1998076A (zh) 半导体装置与半导体装置制造用基板及半导体装置制造用基板的制造方法
JP4612450B2 (ja) 積層型半導体装置の製造方法
JP4203031B2 (ja) 積層型電子部品の製造方法
JP4594777B2 (ja) 積層型電子部品の製造方法
JP2007035865A (ja) 半導体パッケージとその製造方法
JP2005101312A (ja) 半導体装置の製造方法
JP4562950B2 (ja) 半導体装置およびその製造方法
JP4473668B2 (ja) 半導体装置およびその製造方法
JP2008251786A (ja) 半導体装置および半導体装置の製造方法
KR20090105834A (ko) 반도체 장치를 제조하는 방법

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20111216

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20130116

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20130116

R18 Changes to party contact information recorded

Free format text: ST27 STATUS EVENT CODE: A-5-5-R10-R18-OTH-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000