TWI295500B - - Google Patents

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Publication number
TWI295500B
TWI295500B TW095107613A TW95107613A TWI295500B TW I295500 B TWI295500 B TW I295500B TW 095107613 A TW095107613 A TW 095107613A TW 95107613 A TW95107613 A TW 95107613A TW I295500 B TWI295500 B TW I295500B
Authority
TW
Taiwan
Prior art keywords
semiconductor element
adhesive layer
semiconductor
semiconductor device
electronic component
Prior art date
Application number
TW095107613A
Other languages
English (en)
Chinese (zh)
Other versions
TW200727446A (en
Inventor
Atsushi Yoshimura
Tadanobu Ookubo
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2005092596A external-priority patent/JP4594777B2/ja
Priority claimed from JP2005092595A external-priority patent/JP4612450B2/ja
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW200727446A publication Critical patent/TW200727446A/zh
Application granted granted Critical
Publication of TWI295500B publication Critical patent/TWI295500B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H10P72/7442—Separation by peeling
    • H10P72/7444—Separation by peeling using a peeling wedge, a knife or a bar
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01331—Manufacture or treatment of die-attach connectors using blanket deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H10W72/07338—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy hardening the adhesive by curing, e.g. thermosetting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Dicing (AREA)
  • Die Bonding (AREA)
TW095107613A 2005-03-28 2006-03-07 Stack type semiconductor device manufacturing method and stack type electronic component manufacturing method TW200727446A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005092596A JP4594777B2 (ja) 2005-03-28 2005-03-28 積層型電子部品の製造方法
JP2005092595A JP4612450B2 (ja) 2005-03-28 2005-03-28 積層型半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW200727446A TW200727446A (en) 2007-07-16
TWI295500B true TWI295500B (https=) 2008-04-01

Family

ID=37082411

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095107613A TW200727446A (en) 2005-03-28 2006-03-07 Stack type semiconductor device manufacturing method and stack type electronic component manufacturing method

Country Status (3)

Country Link
US (2) US7615413B2 (https=)
KR (1) KR100796884B1 (https=)
TW (1) TW200727446A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI667742B (zh) * 2016-09-23 2019-08-01 日商東芝記憶體股份有限公司 Semiconductor device and method of manufacturing same

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JP2006310846A (ja) * 2005-04-28 2006-11-09 Ls Cable Ltd 半導体用ダイシングダイ接着フィルム
JP4621595B2 (ja) * 2006-01-11 2011-01-26 株式会社東芝 半導体装置の製造方法
JP4881044B2 (ja) * 2006-03-16 2012-02-22 株式会社東芝 積層型半導体装置の製造方法
JP4719042B2 (ja) * 2006-03-16 2011-07-06 株式会社東芝 半導体装置の製造方法
US20080128879A1 (en) * 2006-12-01 2008-06-05 Hem Takiar Film-on-wire bond semiconductor device
US20080131998A1 (en) * 2006-12-01 2008-06-05 Hem Takiar Method of fabricating a film-on-wire bond semiconductor device
US20090001599A1 (en) * 2007-06-28 2009-01-01 Spansion Llc Die attachment, die stacking, and wire embedding using film
TWI358797B (en) * 2007-09-11 2012-02-21 Advanced Semiconductor Eng A wireless communication module with power amplifi
US20090194871A1 (en) 2007-12-27 2009-08-06 Utac - United Test And Assembly Test Center, Ltd. Semiconductor package and method of attaching semiconductor dies to substrates
JP2009302212A (ja) * 2008-06-11 2009-12-24 Fujitsu Microelectronics Ltd 半導体装置及びその製造方法
JP5089560B2 (ja) * 2008-11-28 2012-12-05 リンテック株式会社 半導体チップ積層体および半導体チップ積層用接着剤組成物
TWI382506B (zh) * 2009-09-24 2013-01-11 力成科技股份有限公司 中央銲墊型晶片之主動面朝上堆疊方法與構造
JP5384443B2 (ja) * 2010-07-28 2014-01-08 日東電工株式会社 フリップチップ型半導体裏面用フィルム、ダイシングテープ一体型半導体裏面用フィルム、半導体装置の製造方法、及び、フリップチップ型半導体装置
JP2013008915A (ja) * 2011-06-27 2013-01-10 Toshiba Corp 基板加工方法及び基板加工装置
JP5472275B2 (ja) * 2011-12-14 2014-04-16 株式会社村田製作所 エキスパンド装置及び部品の製造方法
KR20130073190A (ko) * 2011-12-23 2013-07-03 제일모직주식회사 다이싱 다이본딩 필름 및 반도체 장치
JP5828881B2 (ja) * 2013-12-24 2015-12-09 日東電工株式会社 接着フィルム、ダイシング・ダイボンドフィルム、半導体装置の製造方法及び半導体装置
TWI741973B (zh) * 2015-12-22 2021-10-11 美商英特爾股份有限公司 層積體之製造方法，層積體及多層電路基板
JP2019057575A (ja) * 2017-09-20 2019-04-11 東芝メモリ株式会社 半導体装置の製造方法および半導体装置
CN111656505B (zh) * 2018-01-25 2024-01-30 库利克和索夫工业公司 用于焊接机的焊接工具、用于焊接半导体元件的焊接机及相关方法
JP7042713B2 (ja) 2018-07-12 2022-03-28 キオクシア株式会社 半導体装置
JP2023121355A (ja) * 2022-02-21 2023-08-31 キオクシア株式会社 半導体装置および半導体装置の製造方法

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JPH08288455A (ja) 1995-04-11 1996-11-01 Oki Electric Ind Co Ltd 半導体装置およびその製造方法
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JP2001217384A (ja) 2000-02-01 2001-08-10 Sony Corp 積層型半導体装置の製造方法、及び積層型半導体装置
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JP2004311848A (ja) 2003-04-09 2004-11-04 Nitta Ind Corp 半導体装置の製造方法、保護用粘着テープおよびダイボンド用接着剤付き支持用粘着テープ
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US20050205981A1 (en) 2004-03-18 2005-09-22 Kabushiki Kaisha Toshiba Stacked electronic part
JP2005327789A (ja) 2004-05-12 2005-11-24 Sharp Corp ダイシング・ダイボンド兼用粘接着シートおよびこれを用いた半導体装置の製造方法
JP2006128169A (ja) 2004-10-26 2006-05-18 Fujitsu Ltd 半導体装置及び半導体装置の製造方法
US7560821B2 (en) * 2005-03-24 2009-07-14 Sumitomo Bakelite Company, Ltd Area mount type semiconductor device, and die bonding resin composition and encapsulating resin composition used for the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI667742B (zh) * 2016-09-23 2019-08-01 日商東芝記憶體股份有限公司 Semiconductor device and method of manufacturing same

Also Published As

Publication number Publication date
US20100062566A1 (en) 2010-03-11
US7615413B2 (en) 2009-11-10
KR20060104912A (ko) 2006-10-09
TW200727446A (en) 2007-07-16
US20060226520A1 (en) 2006-10-12
KR100796884B1 (ko) 2008-01-22
US7785926B2 (en) 2010-08-31

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