TW200719396A - Pattern verification method, program thereof, and manufacturing method of semiconductor device - Google Patents

Pattern verification method, program thereof, and manufacturing method of semiconductor device

Info

Publication number
TW200719396A
TW200719396A TW095131144A TW95131144A TW200719396A TW 200719396 A TW200719396 A TW 200719396A TW 095131144 A TW095131144 A TW 095131144A TW 95131144 A TW95131144 A TW 95131144A TW 200719396 A TW200719396 A TW 200719396A
Authority
TW
Taiwan
Prior art keywords
pattern
program
manufacturing
semiconductor device
pattern verification
Prior art date
Application number
TW095131144A
Other languages
English (en)
Inventor
Ryuji Ogawa
Koji Hashimoto
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW200719396A publication Critical patent/TW200719396A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW095131144A 2005-08-25 2006-08-24 Pattern verification method, program thereof, and manufacturing method of semiconductor device TW200719396A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005244448A JP4744980B2 (ja) 2005-08-25 2005-08-25 パターン検証方法、そのプログラム、半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW200719396A true TW200719396A (en) 2007-05-16

Family

ID=37805827

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095131144A TW200719396A (en) 2005-08-25 2006-08-24 Pattern verification method, program thereof, and manufacturing method of semiconductor device

Country Status (3)

Country Link
US (3) US20070050741A1 (zh)
JP (1) JP4744980B2 (zh)
TW (1) TW200719396A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI448916B (zh) * 2009-07-30 2014-08-11 United Microelectronics Corp 修正佈局圖案的方法
TWI493369B (zh) * 2008-04-24 2015-07-21 Synopsys Inc 產生用來執行基於圖案剪輯之自動佈局驗證的基於圖案剪輯之熱點資料庫之方法及系統以及非暫時性電腦可讀取的儲存媒體

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104882442B (zh) * 2005-04-26 2018-09-11 瑞萨电子株式会社 半导体装置及其制造方法和半导体制造用掩模、光接近处理方法
US7565633B2 (en) * 2007-01-03 2009-07-21 International Business Machines Corporation Verifying mask layout printability using simulation with adjustable accuracy
JP2010521035A (ja) * 2007-03-09 2010-06-17 メンター グラフィックス コーポレイション レイアウト設計データの増分分析
JP4958616B2 (ja) * 2007-04-20 2012-06-20 株式会社日立ハイテクノロジーズ ホットスポット絞り込み装置、ホットスポット絞り込み方法、ホットスポット絞り込みプログラム、ホットスポット検査装置、および、ホットスポット検査方法
JP5252932B2 (ja) 2008-01-18 2013-07-31 株式会社東芝 半導体装置の製造方法
JP5058003B2 (ja) * 2008-01-25 2012-10-24 株式会社リコー フォトマスクデータ検証用半導体セル、半導体チップ、及びフォトマスクデータ検証方法
JP5374727B2 (ja) * 2008-07-16 2013-12-25 ルネサスエレクトロニクス株式会社 リソグラフィシミュレーション装置、ならびにリソグラフィシミュレーションプログラムおよびそれを使用した半導体装置設計製造方法
JP4852083B2 (ja) * 2008-09-29 2012-01-11 株式会社東芝 パタンデータの作成方法およびパタンデータ作成プログラム
JP2010211046A (ja) * 2009-03-11 2010-09-24 Toshiba Corp パターン検証方法およびパターン検証プログラム
US20110047519A1 (en) 2009-05-11 2011-02-24 Juan Andres Torres Robles Layout Content Analysis for Source Mask Optimization Acceleration
JP5603768B2 (ja) * 2010-12-28 2014-10-08 株式会社東芝 半導体集積回路の配線方法、半導体回路配線装置および半導体集積回路
JP5764364B2 (ja) 2011-03-31 2015-08-19 株式会社ニューフレアテクノロジー 半導体装置の製造方法、描画装置、プログラム及びパターン転写装置
JP5554303B2 (ja) 2011-09-08 2014-07-23 株式会社東芝 半導体集積回路および半導体集積回路の設計方法
US8683394B2 (en) * 2012-01-31 2014-03-25 Mentor Graphics Corporation Pattern matching optical proximity correction
US8806391B2 (en) * 2012-07-31 2014-08-12 United Microelectronics Corp. Method of optical proximity correction according to complexity of mask pattern
US8977988B2 (en) 2013-04-09 2015-03-10 United Microelectronics Corp. Method of optical proximity correction for modifying line patterns and integrated circuits with line patterns modified by the same
JP2014229635A (ja) * 2013-05-17 2014-12-08 株式会社東芝 半導体検査方法および半導体検査装置
CN103309149B (zh) * 2013-06-08 2016-03-23 上海华力微电子有限公司 光学临近效应修正方法
JP6418786B2 (ja) * 2013-07-10 2018-11-07 キヤノン株式会社 パターンの作成方法、プログラムおよび情報処理装置
JP6399751B2 (ja) * 2013-12-25 2018-10-03 キヤノン株式会社 マスクパターン作成方法、プログラム、マスク製造方法、露光方法及び物品製造方法
US20170061046A1 (en) * 2015-09-01 2017-03-02 Kabushiki Kaisha Toshiba Simulation device of semiconductor device and simulation method of semiconductor device
US20170068757A1 (en) * 2015-09-08 2017-03-09 Kabushiki Kaisha Toshiba Simulation device for semiconductor device, and short-circuit determination method for semiconductor device
US9881121B2 (en) 2015-09-09 2018-01-30 Toshiba Memory Corporation Verification method of mask pattern, manufacturing method of a semiconductor device and nontransitory computer readable medium storing a mask pattern verification program
US9977325B2 (en) * 2015-10-20 2018-05-22 International Business Machines Corporation Modifying design layer of integrated circuit (IC)
US9983566B2 (en) * 2015-12-03 2018-05-29 The Boeing Company Part inspection system and method
JP6808684B2 (ja) * 2018-06-14 2021-01-06 キヤノン株式会社 情報処理装置、判定方法、プログラム、リソグラフィシステム、および物品の製造方法
JP7214440B2 (ja) * 2018-11-01 2023-01-30 三菱重工エンジニアリング株式会社 検証処理装置、検証処理方法及びプログラム
CN109491217B (zh) * 2018-12-29 2020-11-24 上海华力集成电路制造有限公司 基于图形参数空间调整光刻模型覆盖特殊结构的方法
TWI743807B (zh) * 2020-05-27 2021-10-21 力晶積成電子製造股份有限公司 用於光學鄰近修正的重定位方法
CN114114852B (zh) * 2021-11-30 2024-01-23 上海华力集成电路制造有限公司 Opc修正中通孔层断线热点评估方法

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3583559B2 (ja) * 1996-09-30 2004-11-04 株式会社ルネサステクノロジ 光近接効果補正方法
JP3406506B2 (ja) * 1997-03-24 2003-05-12 シャープ株式会社 フォトマスクのパターン補正方法およびフォトマスクのパターン補正装置
US6470489B1 (en) * 1997-09-17 2002-10-22 Numerical Technologies, Inc. Design rule checking system and method
JP2000162758A (ja) * 1998-11-30 2000-06-16 Matsushita Electric Ind Co Ltd 光学的近接効果補正方法
JP4352498B2 (ja) * 1999-03-26 2009-10-28 ソニー株式会社 パターン露光方法とこれに用いる処理装置
JP4163829B2 (ja) * 1999-11-09 2008-10-08 松下電器産業株式会社 マスクパターン補正方法及びそれを用いたフォトマスク
JP3892205B2 (ja) * 2000-04-14 2007-03-14 松下電器産業株式会社 レイアウトコンパクション方法
JP2002311561A (ja) * 2001-04-11 2002-10-23 Sony Corp パターン形成方法、パターン処理装置および露光マスク
US20030014146A1 (en) * 2001-07-12 2003-01-16 Kabushiki Kaisha Toshiba Dangerous process/pattern detection system and method, danger detection program, and semiconductor device manufacturing method
JP2003092237A (ja) 2001-07-12 2003-03-28 Toshiba Corp 危険プロセス／パターン検出システム、危険プロセス／パターン検出方法、危険検出プログラム、及び半導体装置の製造方法
TWI252516B (en) * 2002-03-12 2006-04-01 Toshiba Corp Determination method of process parameter and method for determining at least one of process parameter and design rule
JP3871949B2 (ja) * 2002-03-27 2007-01-24 株式会社東芝 マスクデータ作成装置及びマスクデータ作成方法
JP2003322945A (ja) * 2002-05-01 2003-11-14 Mitsubishi Electric Corp レイアウトパターンデータの補正装置
US6783904B2 (en) * 2002-05-17 2004-08-31 Freescale Semiconductor, Inc. Lithography correction method and device
JP2003344985A (ja) * 2002-05-23 2003-12-03 Mitsubishi Electric Corp レイアウトパターンデータ補正装置
US6973633B2 (en) * 2002-07-24 2005-12-06 George Lippincott Caching of lithography and etch simulation results
TWI229894B (en) * 2002-09-05 2005-03-21 Toshiba Corp Mask defect inspecting method, semiconductor device manufacturing method, mask defect inspecting apparatus, generating method of defect influence map, and computer program product
US20040049722A1 (en) * 2002-09-09 2004-03-11 Kabushiki Kaisha Toshiba Failure analysis system, failure analysis method, a computer program product and a manufacturing method for a semiconductor device
JP4467962B2 (ja) * 2002-11-26 2010-05-26 パナソニック株式会社 フォトマスクの検査方法
US7001693B2 (en) * 2003-02-28 2006-02-21 International Business Machines Corporation Binary OPC for assist feature layout optimization
JP2004294551A (ja) * 2003-03-25 2004-10-21 Toshiba Corp 光近接効果補正方法、光近接効果補正装置、及びプログラム
JP2004302263A (ja) * 2003-03-31 2004-10-28 Sharp Corp マスクパターン補正方法およびフォトマスク
JP4335563B2 (ja) * 2003-03-31 2009-09-30 Ｎｅｃエレクトロニクス株式会社 マスクパターン検証方法、マスクパターン検証用プログラム、及びマスク製造方法
JP2004318224A (ja) * 2003-04-11 2004-11-11 Fujitsu Ltd 配線図形検証方法、プログラム及び装置
JP2004341157A (ja) * 2003-05-15 2004-12-02 Seiko Epson Corp 露光用マスク、光近接効果補正装置、光近接効果補正方法、半導体装置の製造方法および光近接効果補正プログラム
JP4068531B2 (ja) * 2003-08-20 2008-03-26 株式会社東芝 Ｏｐｃを用いたパターン寸法の補正方法及び検証方法、マスクの作成方法及び半導体装置の製造方法、並びに該補正方法を実行するシステム及びプログラム
JP4068541B2 (ja) * 2003-09-25 2008-03-26 株式会社東芝 集積回路パターン検証装置と検証方法
JP4074240B2 (ja) * 2003-09-30 2008-04-09 株式会社東芝 偏向歪み補正システム、偏向歪み補正方法、偏向歪み補正プログラム及び半導体装置の製造方法
US7155689B2 (en) * 2003-10-07 2006-12-26 Magma Design Automation, Inc. Design-manufacturing interface via a unified model
US7010776B2 (en) * 2003-10-27 2006-03-07 International Business Machines Corporation Extending the range of lithographic simulation integrals
JP4488727B2 (ja) * 2003-12-17 2010-06-23 株式会社東芝 設計レイアウト作成方法、設計レイアウト作成システム、マスクの製造方法、半導体装置の製造方法、及び設計レイアウト作成プログラム
JP4247104B2 (ja) * 2003-12-18 2009-04-02 株式会社東芝 パターン検証方法、パターン検証システム
JP2005223252A (ja) * 2004-02-09 2005-08-18 Seiko Epson Corp 半導体装置の製造方法及び集積回路内の寸法確認箇所抽出方法
US7794897B2 (en) * 2004-03-02 2010-09-14 Kabushiki Kaisha Toshiba Mask pattern correcting method, mask pattern inspecting method, photo mask manufacturing method, and semiconductor device manufacturing method
JP2005268611A (ja) * 2004-03-19 2005-09-29 Renesas Technology Corp 半導体装置の製造方法
US7269804B2 (en) * 2004-04-02 2007-09-11 Advanced Micro Devices, Inc. System and method for integrated circuit device design and manufacture using optical rule checking to screen resolution enhancement techniques
JP2005309140A (ja) * 2004-04-22 2005-11-04 Toshiba Corp フォトマスク製造方法、フォトマスク欠陥修正箇所判定方法、及びフォトマスク欠陥修正箇所判定装置
US7065738B1 (en) * 2004-05-04 2006-06-20 Advanced Micro Devices, Inc. Method of verifying an optical proximity correction (OPC) model
US7131104B2 (en) * 2004-05-13 2006-10-31 International Business Machines Coporation Fast and accurate optical proximity correction engine for incorporating long range flare effects
US7313781B2 (en) * 2004-05-28 2007-12-25 Kabushiki Kaisha Toshiba Image data correction method, lithography simulation method, image data correction system, program, mask and method of manufacturing a semiconductor device
JP4266189B2 (ja) * 2004-07-09 2009-05-20 株式会社東芝 半導体集積回路パターンの検証方法、フォトマスクの作成方法、半導体集積回路装置の製造方法、及び半導体集積回路パターンの検証方法を実現するためのプログラム
US7530048B2 (en) * 2005-04-09 2009-05-05 Cadence Design Systems, Inc. Defect filtering optical lithography verification process
US7343582B2 (en) * 2005-05-26 2008-03-11 International Business Machines Corporation Optical proximity correction using progressively smoothed mask shapes
US7353472B2 (en) * 2005-08-12 2008-04-01 International Business Machines Corporation System and method for testing pattern sensitive algorithms for semiconductor design

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI493369B (zh) * 2008-04-24 2015-07-21 Synopsys Inc 產生用來執行基於圖案剪輯之自動佈局驗證的基於圖案剪輯之熱點資料庫之方法及系統以及非暫時性電腦可讀取的儲存媒體
TWI448916B (zh) * 2009-07-30 2014-08-11 United Microelectronics Corp 修正佈局圖案的方法

Also Published As

Publication number Publication date
JP2007057948A (ja) 2007-03-08
US7987435B2 (en) 2011-07-26
US20110294263A1 (en) 2011-12-01
JP4744980B2 (ja) 2011-08-10
US20100031224A1 (en) 2010-02-04
US8127265B2 (en) 2012-02-28
US20070050741A1 (en) 2007-03-01

Similar Documents

Publication Publication Date Title
TW200719396A (en) Pattern verification method, program thereof, and manufacturing method of semiconductor device
SG125169A1 (en) Method and apparatus identifying a manufacturing problem area in a layout using a process-sensitivity model
WO2012051081A3 (en) Method for integrated circuit manufacturing and mask data preparation using curvilinear patterns
SG125933A1 (en) Mask and its manufacturing method, exposure, and device fabrication method
TW200632538A (en) System, method and program for generating mask data, exposure mask and semiconductor device
ATE507576T1 (de) Ionenextraktionseinrichtungen und verfahren zur selektiven extraktion von ionen
EP2023248A4 (en) DATA PROCESSING DEVICE, PROCESS, PROGRAM, INTEGRATED CIRCUIT, AND PROGRAMMING EQUIPMENT
TW200707118A (en) Method of characterization, method of characterizing a process operation, and device manufacturing method
TWI371778B (en) Process for forming resist pattern, semiconductor device and manufacturing method for the same
WO2007030704A3 (en) System and method for mask verification using an individual mask error model
EP2077577A4 (en) SILICON STRUCTURE HAVING A HIGH SIDE OPENING, METHOD FOR PRODUCING THE SILICON STRUCTURE, A SILICON STRUCTURE MANUFACTURING DEVICE, A SILICON STRUCTURE PRODUCTION PROGRAM, AND METHOD FOR PRODUCING A SILICONE STRUCTURE METAL MASK
DE602005014127D1 (de) Medizinische vorrichtung und herstellungsverfahren dafür
WO2005072163A3 (en) Electrostatic discharge simulation
TW200734810A (en) Method and apparatus for evaluating photomask, and method for manufacturing semiconductor device
EP2040192A4 (en) INFORMATION PROCESSING DEVICE, INTEGRATED CIRCUIT, METHOD, AND PROGRAM
TW200713422A (en) Semiconductor device having dummy pattern and method for manufacturing the same
TW200943112A (en) Semiconductor-device manufacturing method, semiconductor-device manufacturing program and semiconductor-device manufacturing system
TW200731133A (en) Firmware filters and patches
WO2008135810A3 (en) Method and apparatus for designing an integrated circuit
SG129405A1 (en) Manufacturing method for electronic substrate, manufacturing method for electro-optical device, and manufacturing method for electronic device
TW200603264A (en) Mask, method for producing the same, deposition method, electronic device, and electronic apparatus
WO2008078376A1 (ja) 認証装置、認証方法、認証プログラム
WO2006127408A3 (en) Method and system for increased accuracy for extraction of electrical parameters
TW200710616A (en) Exposure apparatus and method for manufacturing device
WO2011090852A3 (en) Through silicon via lithographic alignment and registration