TW200513544A - High-purity Ni-V alloy, target therefrom, High-purity Ni-V alloy thin film and process for producing high-purity Ni-V alloy - Google Patents

High-purity Ni-V alloy, target therefrom, High-purity Ni-V alloy thin film and process for producing high-purity Ni-V alloy

Info

Publication number
TW200513544A
TW200513544A TW093128206A TW93128206A TW200513544A TW 200513544 A TW200513544 A TW 200513544A TW 093128206 A TW093128206 A TW 093128206A TW 93128206 A TW93128206 A TW 93128206A TW 200513544 A TW200513544 A TW 200513544A
Authority
TW
Taiwan
Prior art keywords
alloy
purity
thin film
producing
ingots
Prior art date
Application number
TW093128206A
Other languages
English (en)
Other versions
TWI291995B (zh
Inventor
Yuichiro Shindo
Yasuhiro Yamakoshi
Original Assignee
Nikko Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikko Materials Co Ltd filed Critical Nikko Materials Co Ltd
Publication of TW200513544A publication Critical patent/TW200513544A/zh
Application granted granted Critical
Publication of TWI291995B publication Critical patent/TWI291995B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C19/00Alloys based on nickel or cobalt
    • C22C19/03Alloys based on nickel or cobalt based on nickel
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacture And Refinement Of Metals (AREA)
TW093128206A 2003-10-07 2004-09-17 High-purity Ni-V alloy, target therefrom, High-purity Ni-V alloy thin film and process for producing high-purity Ni-V alloy TW200513544A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003348119 2003-10-07

Publications (2)

Publication Number Publication Date
TW200513544A true TW200513544A (en) 2005-04-16
TWI291995B TWI291995B (zh) 2008-01-01

Family

ID=34430953

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093128206A TW200513544A (en) 2003-10-07 2004-09-17 High-purity Ni-V alloy, target therefrom, High-purity Ni-V alloy thin film and process for producing high-purity Ni-V alloy

Country Status (7)

Country Link
US (2) US8871144B2 (zh)
EP (1) EP1672086B1 (zh)
JP (2) JP4447556B2 (zh)
KR (1) KR100773238B1 (zh)
CN (2) CN101186979B (zh)
TW (1) TW200513544A (zh)
WO (1) WO2005035809A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI408049B (zh) * 2010-11-17 2013-09-11 Jx Nippon Mining & Metals Corp Copper foil for printed wiring board

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JP4376487B2 (ja) * 2002-01-18 2009-12-02 日鉱金属株式会社 高純度ニッケル合金ターゲットの製造方法
JP4466902B2 (ja) * 2003-01-10 2010-05-26 日鉱金属株式会社 ニッケル合金スパッタリングターゲット
WO2005041290A1 (ja) * 2003-10-24 2005-05-06 Nikko Materials Co., Ltd. ニッケル合金スパッタリングターゲット及びニッケル合金薄膜
EP1721997B1 (en) * 2004-03-01 2012-03-28 JX Nippon Mining & Metals Corporation Method of manufacturing a Ni-Pt ALLOY.
CN101660123B (zh) * 2008-08-28 2013-08-14 长沙天鹰金属材料有限公司 一种镍基靶材及生产工艺
US20100108503A1 (en) * 2008-10-31 2010-05-06 Applied Quantum Technology, Llc Chalcogenide alloy sputter targets for photovoltaic applications and methods of manufacturing the same
JP2009167530A (ja) 2009-02-10 2009-07-30 Nippon Mining & Metals Co Ltd ニッケル合金スパッタリングターゲット及びニッケルシリサイド膜
WO2012066658A1 (ja) * 2010-11-17 2012-05-24 Jx日鉱日石金属株式会社 プリント配線板用銅箔
CN102154578A (zh) * 2011-03-22 2011-08-17 北京工业大学 一种无磁性织构NiV合金基带及其熔炼制备方法
CN104014767B (zh) * 2014-06-05 2016-05-04 贵研铂业股份有限公司 一种制备NiV合金靶材的方法
CN104480329A (zh) * 2014-12-07 2015-04-01 金川集团股份有限公司 一种制备金属合金铸块的方法
CN106290425A (zh) * 2016-07-13 2017-01-04 东莞中子科学中心 一种用于制备中子散射实验样品盒的钒镍合金及其应用
CN110358957B (zh) * 2019-07-31 2021-05-14 江苏美特林科特殊合金股份有限公司 一种镍钒中间合金及其制备方法
CN110468382B (zh) * 2019-09-12 2021-04-09 南京达迈科技实业有限公司 一种含微量元素的大管径Ni-V旋转靶材及其制备方法
CN111549324A (zh) * 2020-06-17 2020-08-18 宁波江丰电子材料股份有限公司 一种NiV合金靶材及其成型的方法与用途
CN115747536A (zh) * 2022-10-11 2023-03-07 散裂中子源科学中心 一种中子散射实验用钒镍合金及其制备方法和应用

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JP4376487B2 (ja) * 2002-01-18 2009-12-02 日鉱金属株式会社 高純度ニッケル合金ターゲットの製造方法
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EP1721997B1 (en) * 2004-03-01 2012-03-28 JX Nippon Mining & Metals Corporation Method of manufacturing a Ni-Pt ALLOY.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI408049B (zh) * 2010-11-17 2013-09-11 Jx Nippon Mining & Metals Corp Copper foil for printed wiring board

Also Published As

Publication number Publication date
US20100242674A1 (en) 2010-09-30
EP1672086A4 (en) 2008-04-09
CN1852998A (zh) 2006-10-25
CN101186979B (zh) 2012-06-13
KR20060057017A (ko) 2006-05-25
KR100773238B1 (ko) 2007-11-02
EP1672086B1 (en) 2019-03-13
EP1672086A1 (en) 2006-06-21
JPWO2005035809A1 (ja) 2008-06-12
JP2010047845A (ja) 2010-03-04
US20060292028A1 (en) 2006-12-28
US7938918B2 (en) 2011-05-10
CN101186979A (zh) 2008-05-28
JP4447556B2 (ja) 2010-04-07
CN100516266C (zh) 2009-07-22
JP5080543B2 (ja) 2012-11-21
TWI291995B (zh) 2008-01-01
US8871144B2 (en) 2014-10-28
WO2005035809A1 (ja) 2005-04-21

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