CN100516266C - 高纯度Ni-V合金、由该Ni-V合金形成的靶以及该Ni-V合金薄膜和高纯度Ni-V合金的制造方法 - Google Patents
高纯度Ni-V合金、由该Ni-V合金形成的靶以及该Ni-V合金薄膜和高纯度Ni-V合金的制造方法 Download PDFInfo
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- CN100516266C CN100516266C CNB2004800268128A CN200480026812A CN100516266C CN 100516266 C CN100516266 C CN 100516266C CN B2004800268128 A CNB2004800268128 A CN B2004800268128A CN 200480026812 A CN200480026812 A CN 200480026812A CN 100516266 C CN100516266 C CN 100516266C
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Manufacture And Refinement Of Metals (AREA)
Abstract
Description
Cr | Al | Mg | U | Th | Pb | Bi | N | 纯度 | |
Ni原料 | 300 | 100 | 60 | 300 | 100 | 100 | 60 | 100 | 99.9 |
V原料 | 800 | 550 | 300 | 1100 | 1050 | 750 | 100 | 700 | 99.0 |
实施例1 | 1 | 2 | 1 | <0.1 | <0.1 | <0.1 | <0.1 | <10 | 99.999 |
1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 差 | |
V(%) | 7.20 | 7.17 | 7.19 | 7.21 | 7.18 | 7.21 | 7.22 | 7.18 | 7.23 | 7.24 | 0.07 |
N(ppm) | 30 | 20 | 30 | 40 | 30 | 30 | 20 | 30 | 20 | 20 | - |
Cr | Al | Mg | U | Th | Pb | Bi | N | 纯度 | |
Ni原料 | 7 | 6 | 3 | 1 | 1 | 5 | 3 | 30 | 99.9 |
V原料 | 500 | 40000 | 100 | 250 | 550 | 1000 | 300 | 1000 | 95.0 |
实施例2 | 9 | 10 | 7 | 1 | 1 | <0.1 | <0.1 | 30 | 99.995 |
1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 差 | |
V(%) | 7.10 | 7.22 | 7.25 | 7.28 | 7.20 | 7.15 | 7.11 | 7.28 | 7.10 | 7.25 | 0.18 |
N(ppm) | 90 | 20 | 30 | 10 | 20 | 50 | 100 | 40 | 70 | 5 | - |
Cr | Al | Mg | U | Th | Pb | Bi | N | 纯度 | |
Ni原料 | 300 | 100 | 60 | 300 | 100 | 100 | 60 | 100 | 99.0 |
V原料 | 70 | 10 | 10 | 10 | 10 | 15 | 12 | 100 | 99.95 |
实施例3 | 5 | 8 | 9 | 2 | 1 | 1 | 1 | 70 | 99.995 |
1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 差 | |
V(%) | 7.23 | 7.15 | 7.13 | 7.26 | 7.23 | 7.20 | 7.18 | 7.25 | 7.16 | 7.19 | 0.12 |
N(ppm) | 30 | 20 | 30 | 40 | 30 | 30 | 20 | 30 | 20 | 20 | - |
Cr | Al | Mg | U | Th | Pb | Bi | N | 纯度 | |
Ni原料 | 300 | 100 | 60 | 300 | 100 | 100 | 60 | 100 | 99.0 |
V原料 | 800 | 550 | 300 | 1100 | 1050 | 750 | 100 | 700 | 99.0 |
比较例1 | 350 | 120 | 70 | 380 | 200 | 120 | 70 | 150 | 99.0 |
1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 差 | |
V(%) | 6.8 | 7.5 | 6.9 | 7.8 | 7.3 | 7.5 | 7.0 | 7.2 | 7.7 | 6.7 | 1.1 |
N(ppm) | 150 | 100 | 130 | 180 | 120 | 250 | 110 | 160 | 130 | 190 | - |
Cr | Al | Mg | U | Th | Pb | Bi | N | 纯度 | |
Ni原料 | 7 | 6 | 3 | 1 | 1 | 5 | 3 | 30 | 99.9 |
V原料 | 500 | 40000 | 100 | 250 | 550 | 1000 | 300 | 1000 | 95.0 |
比较例2 | 12 | 80 | 10 | 12 | 36 | 32 | 15 | 100 | - |
1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 差 | |
V(%) | 7.3 | 8.1 | 7.9 | 8.5 | 7.6 | 7.4 | 8.3 | 8.0 | 7.7 | 7.9 | 1.2 |
N(ppm) | 80 | 90 | 130 | 50 | 80 | 60 | 140 | 50 | 90 | 100 | - |
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003348119 | 2003-10-07 | ||
JP348119/2003 | 2003-10-07 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101865812A Division CN101186979B (zh) | 2003-10-07 | 2004-09-08 | 高纯度Ni-V合金的制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1852998A CN1852998A (zh) | 2006-10-25 |
CN100516266C true CN100516266C (zh) | 2009-07-22 |
Family
ID=34430953
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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CNB2004800268128A Active CN100516266C (zh) | 2003-10-07 | 2004-09-08 | 高纯度Ni-V合金、由该Ni-V合金形成的靶以及该Ni-V合金薄膜和高纯度Ni-V合金的制造方法 |
CN2007101865812A Active CN101186979B (zh) | 2003-10-07 | 2004-09-08 | 高纯度Ni-V合金的制造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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CN2007101865812A Active CN101186979B (zh) | 2003-10-07 | 2004-09-08 | 高纯度Ni-V合金的制造方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US8871144B2 (zh) |
EP (1) | EP1672086B1 (zh) |
JP (2) | JP4447556B2 (zh) |
KR (1) | KR100773238B1 (zh) |
CN (2) | CN100516266C (zh) |
TW (1) | TW200513544A (zh) |
WO (1) | WO2005035809A1 (zh) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4376487B2 (ja) * | 2002-01-18 | 2009-12-02 | 日鉱金属株式会社 | 高純度ニッケル合金ターゲットの製造方法 |
JP4466902B2 (ja) * | 2003-01-10 | 2010-05-26 | 日鉱金属株式会社 | ニッケル合金スパッタリングターゲット |
WO2005041290A1 (ja) * | 2003-10-24 | 2005-05-06 | Nikko Materials Co., Ltd. | ニッケル合金スパッタリングターゲット及びニッケル合金薄膜 |
KR100925691B1 (ko) * | 2004-03-01 | 2009-11-10 | 닛코킨조쿠 가부시키가이샤 | 니켈-플라티늄 합금 및 동(同) 합금 타겟트 |
CN101660123B (zh) * | 2008-08-28 | 2013-08-14 | 长沙天鹰金属材料有限公司 | 一种镍基靶材及生产工艺 |
US20100108503A1 (en) * | 2008-10-31 | 2010-05-06 | Applied Quantum Technology, Llc | Chalcogenide alloy sputter targets for photovoltaic applications and methods of manufacturing the same |
JP2009167530A (ja) | 2009-02-10 | 2009-07-30 | Nippon Mining & Metals Co Ltd | ニッケル合金スパッタリングターゲット及びニッケルシリサイド膜 |
WO2012066658A1 (ja) * | 2010-11-17 | 2012-05-24 | Jx日鉱日石金属株式会社 | プリント配線板用銅箔 |
TWI408049B (zh) * | 2010-11-17 | 2013-09-11 | Jx Nippon Mining & Metals Corp | Copper foil for printed wiring board |
CN102154578A (zh) * | 2011-03-22 | 2011-08-17 | 北京工业大学 | 一种无磁性织构NiV合金基带及其熔炼制备方法 |
CN104014767B (zh) * | 2014-06-05 | 2016-05-04 | 贵研铂业股份有限公司 | 一种制备NiV合金靶材的方法 |
CN104480329A (zh) * | 2014-12-07 | 2015-04-01 | 金川集团股份有限公司 | 一种制备金属合金铸块的方法 |
CN106290425A (zh) * | 2016-07-13 | 2017-01-04 | 东莞中子科学中心 | 一种用于制备中子散射实验样品盒的钒镍合金及其应用 |
CN110358957B (zh) * | 2019-07-31 | 2021-05-14 | 江苏美特林科特殊合金股份有限公司 | 一种镍钒中间合金及其制备方法 |
CN110468382B (zh) * | 2019-09-12 | 2021-04-09 | 南京达迈科技实业有限公司 | 一种含微量元素的大管径Ni-V旋转靶材及其制备方法 |
CN111549324A (zh) * | 2020-06-17 | 2020-08-18 | 宁波江丰电子材料股份有限公司 | 一种NiV合金靶材及其成型的方法与用途 |
CN115747536A (zh) * | 2022-10-11 | 2023-03-07 | 散裂中子源科学中心 | 一种中子散射实验用钒镍合金及其制备方法和应用 |
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KR100925691B1 (ko) | 2004-03-01 | 2009-11-10 | 닛코킨조쿠 가부시키가이샤 | 니켈-플라티늄 합금 및 동(同) 합금 타겟트 |
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-
2004
- 2004-09-08 CN CNB2004800268128A patent/CN100516266C/zh active Active
- 2004-09-08 US US10/570,748 patent/US8871144B2/en active Active
- 2004-09-08 CN CN2007101865812A patent/CN101186979B/zh active Active
- 2004-09-08 WO PCT/JP2004/013027 patent/WO2005035809A1/ja active Application Filing
- 2004-09-08 KR KR1020067005951A patent/KR100773238B1/ko active IP Right Grant
- 2004-09-08 EP EP04787710.5A patent/EP1672086B1/en active Active
- 2004-09-08 JP JP2005514540A patent/JP4447556B2/ja active Active
- 2004-09-17 TW TW093128206A patent/TW200513544A/zh unknown
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2009
- 2009-10-19 JP JP2009240465A patent/JP5080543B2/ja active Active
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2010
- 2010-06-09 US US12/796,718 patent/US7938918B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR20060057017A (ko) | 2006-05-25 |
US20060292028A1 (en) | 2006-12-28 |
EP1672086A1 (en) | 2006-06-21 |
US7938918B2 (en) | 2011-05-10 |
CN101186979A (zh) | 2008-05-28 |
WO2005035809A1 (ja) | 2005-04-21 |
JP2010047845A (ja) | 2010-03-04 |
CN101186979B (zh) | 2012-06-13 |
CN1852998A (zh) | 2006-10-25 |
JP5080543B2 (ja) | 2012-11-21 |
JPWO2005035809A1 (ja) | 2008-06-12 |
TW200513544A (en) | 2005-04-16 |
JP4447556B2 (ja) | 2010-04-07 |
US8871144B2 (en) | 2014-10-28 |
EP1672086B1 (en) | 2019-03-13 |
EP1672086A4 (en) | 2008-04-09 |
KR100773238B1 (ko) | 2007-11-02 |
US20100242674A1 (en) | 2010-09-30 |
TWI291995B (zh) | 2008-01-01 |
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