TW200505018A - Multiple floating guard ring edge termination for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same - Google Patents
Multiple floating guard ring edge termination for silicon carbide devices and methods of fabricating silicon carbide devices incorporating sameInfo
- Publication number
- TW200505018A TW200505018A TW093100255A TW93100255A TW200505018A TW 200505018 A TW200505018 A TW 200505018A TW 093100255 A TW093100255 A TW 093100255A TW 93100255 A TW93100255 A TW 93100255A TW 200505018 A TW200505018 A TW 200505018A
- Authority
- TW
- Taiwan
- Prior art keywords
- silicon carbide
- carbide devices
- edge termination
- floating guard
- methods
- Prior art date
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract 6
- 229910010271 silicon carbide Inorganic materials 0.000 title abstract 6
- 238000000034 method Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US44019303P | 2003-01-15 | 2003-01-15 | |
US10/731,860 US7026650B2 (en) | 2003-01-15 | 2003-12-09 | Multiple floating guard ring edge termination for silicon carbide devices |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200505018A true TW200505018A (en) | 2005-02-01 |
TWI336522B TWI336522B (en) | 2011-01-21 |
Family
ID=32718154
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093100255A TWI336522B (en) | 2003-01-15 | 2004-01-06 | Multiple floating guard ring edge termination for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same |
Country Status (7)
Country | Link |
---|---|
US (4) | US7026650B2 (zh) |
EP (2) | EP2261987B1 (zh) |
JP (3) | JP5122810B2 (zh) |
KR (1) | KR101036380B1 (zh) |
CA (1) | CA2512580A1 (zh) |
TW (1) | TWI336522B (zh) |
WO (1) | WO2004066392A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9515135B2 (en) | 2003-01-15 | 2016-12-06 | Cree, Inc. | Edge termination structures for silicon carbide devices |
Families Citing this family (60)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7026650B2 (en) * | 2003-01-15 | 2006-04-11 | Cree, Inc. | Multiple floating guard ring edge termination for silicon carbide devices |
CN100382246C (zh) * | 2003-04-25 | 2008-04-16 | 住友电气工业株式会社 | 半导体装置的制造方法 |
US8901699B2 (en) * | 2005-05-11 | 2014-12-02 | Cree, Inc. | Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection |
JP4889645B2 (ja) * | 2005-09-08 | 2012-03-07 | 三菱電機株式会社 | 半導体装置の製造方法 |
US7728402B2 (en) * | 2006-08-01 | 2010-06-01 | Cree, Inc. | Semiconductor devices including schottky diodes with controlled breakdown |
US8432012B2 (en) | 2006-08-01 | 2013-04-30 | Cree, Inc. | Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same |
CN101501859B (zh) * | 2006-08-17 | 2011-05-25 | 克里公司 | 高功率绝缘栅双极晶体管 |
US7955929B2 (en) * | 2007-01-10 | 2011-06-07 | Freescale Semiconductor, Inc. | Method of forming a semiconductor device having an active area and a termination area |
US8835987B2 (en) * | 2007-02-27 | 2014-09-16 | Cree, Inc. | Insulated gate bipolar transistors including current suppressing layers |
US8866150B2 (en) * | 2007-05-31 | 2014-10-21 | Cree, Inc. | Silicon carbide power devices including P-type epitaxial layers and direct ohmic contacts |
US7687825B2 (en) * | 2007-09-18 | 2010-03-30 | Cree, Inc. | Insulated gate bipolar conduction transistors (IBCTS) and related methods of fabrication |
US8110888B2 (en) * | 2007-09-18 | 2012-02-07 | Microsemi Corporation | Edge termination for high voltage semiconductor device |
US9640609B2 (en) * | 2008-02-26 | 2017-05-02 | Cree, Inc. | Double guard ring edge termination for silicon carbide devices |
US8232558B2 (en) | 2008-05-21 | 2012-07-31 | Cree, Inc. | Junction barrier Schottky diodes with current surge capability |
US8097919B2 (en) * | 2008-08-11 | 2012-01-17 | Cree, Inc. | Mesa termination structures for power semiconductor devices including mesa step buffers |
US7759186B2 (en) * | 2008-09-03 | 2010-07-20 | The United States Of America As Represented By The Secretary Of The Navy | Method for fabricating junction termination extension with formation of photosensitive dopant mask to control doping profile and lateral width for high-voltage electronic devices |
US7825487B2 (en) * | 2008-09-30 | 2010-11-02 | Northrop Grumman Systems Corporation | Guard ring structures and method of fabricating thereof |
US8106487B2 (en) | 2008-12-23 | 2012-01-31 | Pratt & Whitney Rocketdyne, Inc. | Semiconductor device having an inorganic coating layer applied over a junction termination extension |
US8294507B2 (en) | 2009-05-08 | 2012-10-23 | Cree, Inc. | Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits |
US8637386B2 (en) | 2009-05-12 | 2014-01-28 | Cree, Inc. | Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same |
US8629509B2 (en) * | 2009-06-02 | 2014-01-14 | Cree, Inc. | High voltage insulated gate bipolar transistors with minority carrier diverter |
US8193848B2 (en) | 2009-06-02 | 2012-06-05 | Cree, Inc. | Power switching devices having controllable surge current capabilities |
US8541787B2 (en) * | 2009-07-15 | 2013-09-24 | Cree, Inc. | High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability |
US8354690B2 (en) | 2009-08-31 | 2013-01-15 | Cree, Inc. | Solid-state pinch off thyristor circuits |
US9117739B2 (en) | 2010-03-08 | 2015-08-25 | Cree, Inc. | Semiconductor devices with heterojunction barrier regions and methods of fabricating same |
US8415671B2 (en) | 2010-04-16 | 2013-04-09 | Cree, Inc. | Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices |
WO2011141981A1 (ja) | 2010-05-10 | 2011-11-17 | 株式会社日立製作所 | 半導体装置 |
US8803277B2 (en) | 2011-02-10 | 2014-08-12 | Cree, Inc. | Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same |
EP2693483B1 (en) * | 2011-03-28 | 2016-11-16 | Toyota Jidosha Kabushiki Kaisha | Vertical-type semiconductor device |
US9318623B2 (en) | 2011-04-05 | 2016-04-19 | Cree, Inc. | Recessed termination structures and methods of fabricating electronic devices including recessed termination structures |
US9029945B2 (en) | 2011-05-06 | 2015-05-12 | Cree, Inc. | Field effect transistor devices with low source resistance |
US9142662B2 (en) | 2011-05-06 | 2015-09-22 | Cree, Inc. | Field effect transistor devices with low source resistance |
JP2013030618A (ja) | 2011-07-28 | 2013-02-07 | Rohm Co Ltd | 半導体装置 |
US8664665B2 (en) | 2011-09-11 | 2014-03-04 | Cree, Inc. | Schottky diode employing recesses for elements of junction barrier array |
US8618582B2 (en) | 2011-09-11 | 2013-12-31 | Cree, Inc. | Edge termination structure employing recesses for edge termination elements |
JP2014531752A (ja) | 2011-09-11 | 2014-11-27 | クリー インコーポレイテッドCree Inc. | 改善したレイアウトを有するトランジスタを備える高電流密度電力モジュール |
US9640617B2 (en) | 2011-09-11 | 2017-05-02 | Cree, Inc. | High performance power module |
US8680587B2 (en) | 2011-09-11 | 2014-03-25 | Cree, Inc. | Schottky diode |
US9373617B2 (en) | 2011-09-11 | 2016-06-21 | Cree, Inc. | High current, low switching loss SiC power module |
CN104221151B (zh) | 2012-03-16 | 2017-02-22 | 三菱电机株式会社 | 半导体装置及其制造方法 |
US9406762B2 (en) * | 2012-05-17 | 2016-08-02 | General Electric Company | Semiconductor device with junction termination extension |
US8901639B2 (en) | 2012-07-26 | 2014-12-02 | Cree, Inc. | Monolithic bidirectional silicon carbide switching devices |
US9006748B2 (en) | 2012-12-03 | 2015-04-14 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device and method for manufacturing same |
JP6242633B2 (ja) | 2013-09-03 | 2017-12-06 | 株式会社東芝 | 半導体装置 |
WO2015033463A1 (ja) | 2013-09-09 | 2015-03-12 | 株式会社日立製作所 | 半導体装置およびその製造方法、電力変換装置、3相モータシステム、自動車、ならびに鉄道車両 |
WO2015040675A1 (ja) * | 2013-09-17 | 2015-03-26 | 株式会社日立製作所 | 半導体装置、電力変換装置、鉄道車両、および半導体装置の製造方法 |
JP2015126193A (ja) * | 2013-12-27 | 2015-07-06 | 株式会社豊田中央研究所 | 縦型半導体装置 |
CN103824760B (zh) * | 2014-01-30 | 2017-04-26 | 株洲南车时代电气股份有限公司 | 一种碳化硅功率器件结终端的制造方法 |
WO2015166608A1 (ja) | 2014-04-30 | 2015-11-05 | 三菱電機株式会社 | 炭化珪素半導体装置 |
WO2016043247A1 (ja) | 2014-09-17 | 2016-03-24 | 富士電機株式会社 | 半導体装置 |
EP3012870A1 (en) | 2014-10-20 | 2016-04-27 | ABB Technology AG | Edge termination for high voltage semiconductor devices |
WO2017043606A1 (ja) | 2015-09-09 | 2017-03-16 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
US9818862B2 (en) | 2016-01-05 | 2017-11-14 | Nxp Usa, Inc. | Semiconductor device with floating field plates |
US9691752B1 (en) * | 2016-04-11 | 2017-06-27 | United Microelectronics Corp. | Semiconductor device for electrostatic discharge protection and method of forming the same |
KR102550521B1 (ko) | 2016-10-21 | 2023-06-30 | 한국전기연구원 | 실리콘 카바이드 반도체 소자의 제조방법 |
CN110603645B (zh) | 2017-05-08 | 2023-09-19 | 罗姆股份有限公司 | 半导体装置 |
US20210273090A1 (en) * | 2020-03-02 | 2021-09-02 | Cree, Inc. | Semiconductor die with improved edge termination |
TWI743818B (zh) * | 2020-06-02 | 2021-10-21 | 台灣半導體股份有限公司 | 具有多保護環結構之蕭特基二極體 |
KR102372131B1 (ko) | 2020-11-27 | 2022-03-08 | 재단법인 부산테크노파크 | 고내압 실리콘 카바이드 쇼트키 베리어 다이오드 및 제조방법 |
US12009389B2 (en) | 2021-11-30 | 2024-06-11 | Wolfspeed, Inc. | Edge termination for power semiconductor devices and related fabrication methods |
Family Cites Families (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL107889C (zh) * | 1958-08-26 | |||
NL230892A (zh) * | 1958-08-27 | |||
BE760009A (fr) * | 1969-12-10 | 1971-05-17 | Western Electric Co | Oscillateur a haute frequence |
US4096622A (en) * | 1975-07-31 | 1978-06-27 | General Motors Corporation | Ion implanted Schottky barrier diode |
US4329699A (en) * | 1979-03-26 | 1982-05-11 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method of manufacturing the same |
JPS56124273A (en) * | 1980-03-04 | 1981-09-29 | Semiconductor Res Found | Semiconductor device |
JPS57211752A (en) | 1981-06-24 | 1982-12-25 | Hitachi Ltd | Semiconductor device |
JPS58148469A (ja) | 1982-02-27 | 1983-09-03 | Nippon Telegr & Teleph Corp <Ntt> | シヨツトキダイオ−ド |
CA1189634A (en) * | 1981-09-11 | 1985-06-25 | Yoshihito Amemiya | Low-loss and high-speed diodes |
JPS58140139A (ja) | 1982-02-16 | 1983-08-19 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
US4638551A (en) * | 1982-09-24 | 1987-01-27 | General Instrument Corporation | Schottky barrier device and method of manufacture |
US4816879A (en) * | 1982-12-08 | 1989-03-28 | North American Philips Corporation, Signetics Division | Schottky-type rectifier having controllable barrier height |
GB2134705B (en) * | 1983-01-28 | 1985-12-24 | Philips Electronic Associated | Semiconductor devices |
JPS59232467A (ja) * | 1983-06-16 | 1984-12-27 | Toshiba Corp | ガ−ドリング付きシヨツトキ−バリヤ−ダイオ−ド |
US4762806A (en) * | 1983-12-23 | 1988-08-09 | Sharp Kabushiki Kaisha | Process for producing a SiC semiconductor device |
AU576594B2 (en) * | 1984-06-15 | 1988-09-01 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Heat-resistant thin film photoelectric converter |
JPS61137368A (ja) * | 1984-12-10 | 1986-06-25 | Hitachi Ltd | 半導体装置 |
US4742377A (en) * | 1985-02-21 | 1988-05-03 | General Instrument Corporation | Schottky barrier device with doped composite guard ring |
US4738937A (en) * | 1985-10-22 | 1988-04-19 | Hughes Aircraft Company | Method of making ohmic contact structure |
JPS62279672A (ja) | 1986-05-28 | 1987-12-04 | Kanegafuchi Chem Ind Co Ltd | 半導体装置 |
US4907040A (en) * | 1986-09-17 | 1990-03-06 | Konishiroku Photo Industry Co., Ltd. | Thin film Schottky barrier device |
JPH0671074B2 (ja) | 1986-11-25 | 1994-09-07 | 日本電気株式会社 | 半導体装置 |
US4901120A (en) * | 1987-06-10 | 1990-02-13 | Unitrode Corporation | Structure for fast-recovery bipolar devices |
US4875083A (en) * | 1987-10-26 | 1989-10-17 | North Carolina State University | Metal-insulator-semiconductor capacitor formed on silicon carbide |
US4866005A (en) * | 1987-10-26 | 1989-09-12 | North Carolina State University | Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide |
US5270252A (en) * | 1988-10-25 | 1993-12-14 | United States Of America As Represented By The Secretary Of The Navy | Method of forming platinum and platinum silicide schottky contacts on beta-silicon carbide |
US4918497A (en) * | 1988-12-14 | 1990-04-17 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
JP3221673B2 (ja) | 1989-11-01 | 2001-10-22 | 新電元工業株式会社 | 高耐圧半導体装置 |
CA2128213A1 (en) * | 1992-01-16 | 1993-07-22 | Jainagesh A. Sekhar | Electrical heating element, related composites, and composition and method for producing such products using dieless micropyretic synthesis |
JPH0750420A (ja) | 1994-03-31 | 1995-02-21 | Semiconductor Energy Lab Co Ltd | 絶縁ゲート型電界効果トランジスタの製造方法 |
US5565384A (en) | 1994-04-28 | 1996-10-15 | Texas Instruments Inc | Self-aligned via using low permittivity dielectric |
JPH088242A (ja) | 1994-06-17 | 1996-01-12 | Toshiba Chem Corp | 半導体装置 |
TW286435B (zh) | 1994-07-27 | 1996-09-21 | Siemens Ag | |
JPH0897441A (ja) * | 1994-09-26 | 1996-04-12 | Fuji Electric Co Ltd | 炭化けい素ショットキーダイオードの製造方法 |
JP3581447B2 (ja) * | 1995-08-22 | 2004-10-27 | 三菱電機株式会社 | 高耐圧半導体装置 |
US5967795A (en) | 1995-08-30 | 1999-10-19 | Asea Brown Boveri Ab | SiC semiconductor device comprising a pn junction with a voltage absorbing edge |
US5804355A (en) * | 1996-03-14 | 1998-09-08 | Agfa-Gevaert N.V. | Producing a contone image by sequentially exposing a thermo-sensitive imaging material by means of a set of radiation beams |
JP3147331B2 (ja) | 1996-04-02 | 2001-03-19 | 株式会社ワコール | 補整機能を備えた股部を有する衣類 |
DE19616605C2 (de) * | 1996-04-25 | 1998-03-26 | Siemens Ag | Schottkydiodenanordnung und Verfahren zur Herstellung |
US6002159A (en) * | 1996-07-16 | 1999-12-14 | Abb Research Ltd. | SiC semiconductor device comprising a pn junction with a voltage absorbing edge |
US5801836A (en) * | 1996-07-16 | 1998-09-01 | Abb Research Ltd. | Depletion region stopper for PN junction in silicon carbide |
SE9700156D0 (sv) * | 1997-01-21 | 1997-01-21 | Abb Research Ltd | Junction termination for Si C Schottky diode |
CN1131548C (zh) * | 1997-04-04 | 2003-12-17 | 松下电器产业株式会社 | 半导体装置 |
SE9702220D0 (sv) * | 1997-06-11 | 1997-06-11 | Abb Research Ltd | A semiconductor device with a junction termination and a method for production thereof |
US5932894A (en) * | 1997-06-26 | 1999-08-03 | Abb Research Ltd. | SiC semiconductor device comprising a pn junction |
JPH1187331A (ja) | 1997-09-01 | 1999-03-30 | Matsushita Electron Corp | 半導体装置の製造方法 |
US6972436B2 (en) * | 1998-08-28 | 2005-12-06 | Cree, Inc. | High voltage, high temperature capacitor and interconnection structures |
SE9802909L (sv) * | 1998-08-31 | 1999-10-13 | Abb Research Ltd | Metod för framställning av en pn-övergång för en halvledaranordning av SiC samt en halvledaranordning av SiC med pn-övergång |
JP2002535839A (ja) * | 1999-01-15 | 2002-10-22 | インフィネオン テクノロジース アクチエンゲゼルシャフト | 半導体素子に対するエッジ終端部、エッジ終端部を有するショットキー・ダイオードおよびショットキー・ダイオードの製造方法 |
US6313482B1 (en) * | 1999-05-17 | 2001-11-06 | North Carolina State University | Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein |
US6242784B1 (en) * | 1999-06-28 | 2001-06-05 | Intersil Corporation | Edge termination for silicon power devices |
GB2355110A (en) * | 1999-08-11 | 2001-04-11 | Mitel Semiconductor Ltd | High voltage semiconductor device termination structure |
FR2803103B1 (fr) | 1999-12-24 | 2003-08-29 | St Microelectronics Sa | Diode schottky sur substrat de carbure de silicium |
US6686616B1 (en) | 2000-05-10 | 2004-02-03 | Cree, Inc. | Silicon carbide metal-semiconductor field effect transistors |
US6573128B1 (en) * | 2000-11-28 | 2003-06-03 | Cree, Inc. | Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same |
JP3708057B2 (ja) * | 2001-07-17 | 2005-10-19 | 株式会社東芝 | 高耐圧半導体装置 |
FR2837322B1 (fr) * | 2002-03-14 | 2005-02-04 | Commissariat Energie Atomique | DIODE SCHOTTKY DE PUISSANCE A SUBSTRAT SiCOI, ET PROCEDE DE REALISATION D'UN TELLE DIODE |
US7026650B2 (en) | 2003-01-15 | 2006-04-11 | Cree, Inc. | Multiple floating guard ring edge termination for silicon carbide devices |
WO2004066391A1 (ja) | 2003-01-20 | 2004-08-05 | Mitsubishi Denki Kabushiki Kaisha | 半導体装置 |
-
2003
- 2003-12-09 US US10/731,860 patent/US7026650B2/en not_active Expired - Lifetime
-
2004
- 2004-01-06 TW TW093100255A patent/TWI336522B/zh not_active IP Right Cessation
- 2004-01-07 EP EP10179609.2A patent/EP2261987B1/en not_active Expired - Lifetime
- 2004-01-07 WO PCT/US2004/001183 patent/WO2004066392A1/en active Application Filing
- 2004-01-07 EP EP04700653.1A patent/EP1584110B1/en not_active Expired - Lifetime
- 2004-01-07 CA CA002512580A patent/CA2512580A1/en not_active Abandoned
- 2004-01-07 JP JP2006500992A patent/JP5122810B2/ja not_active Expired - Lifetime
- 2004-01-07 KR KR1020057012990A patent/KR101036380B1/ko active IP Right Grant
-
2005
- 2005-11-08 US US11/268,789 patent/US7419877B2/en active Active
-
2008
- 2008-08-21 US US12/195,700 patent/US7842549B2/en active Active
-
2010
- 2010-11-19 US US12/950,410 patent/US8124480B2/en not_active Expired - Fee Related
-
2011
- 2011-07-25 JP JP2011162517A patent/JP5695996B2/ja not_active Expired - Lifetime
- 2011-12-16 JP JP2011276103A patent/JP5670308B2/ja not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9515135B2 (en) | 2003-01-15 | 2016-12-06 | Cree, Inc. | Edge termination structures for silicon carbide devices |
Also Published As
Publication number | Publication date |
---|---|
JP5122810B2 (ja) | 2013-01-16 |
JP2011243999A (ja) | 2011-12-01 |
US7026650B2 (en) | 2006-04-11 |
KR20050109924A (ko) | 2005-11-22 |
JP2012084910A (ja) | 2012-04-26 |
EP2261987B1 (en) | 2019-09-18 |
CA2512580A1 (en) | 2004-08-05 |
US20060054895A1 (en) | 2006-03-16 |
EP2261987A3 (en) | 2014-01-15 |
US8124480B2 (en) | 2012-02-28 |
EP2261987A2 (en) | 2010-12-15 |
US20090035926A1 (en) | 2009-02-05 |
JP5695996B2 (ja) | 2015-04-08 |
WO2004066392A1 (en) | 2004-08-05 |
US20110081772A1 (en) | 2011-04-07 |
EP1584110A1 (en) | 2005-10-12 |
JP5670308B2 (ja) | 2015-02-18 |
EP1584110B1 (en) | 2018-02-21 |
JP2006516815A (ja) | 2006-07-06 |
TWI336522B (en) | 2011-01-21 |
KR101036380B1 (ko) | 2011-05-23 |
US7419877B2 (en) | 2008-09-02 |
US20040135153A1 (en) | 2004-07-15 |
US7842549B2 (en) | 2010-11-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200505018A (en) | Multiple floating guard ring edge termination for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same | |
TW200735380A (en) | Edge termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same | |
WO2003073471A3 (en) | POWER SiC DEVICES HAVING RAISED GUARD RINGS | |
TW200514239A (en) | LDMOS device with isolation guard rings | |
WO1998002924A3 (en) | Sic semiconductor device comprising a pn junction with a voltage absorbing edge | |
WO2005050716A3 (en) | High-temperature devices on insulator substrates | |
TW200620612A (en) | Solderable top metal for SiC device | |
WO2006124174A3 (en) | High voltage silicon carbide mos-bipolar devices having bi-directional blocking capabilities and methods of fabricating the same | |
WO2009050871A1 (ja) | 半導体装置およびその製造方法 | |
TW200701358A (en) | Methods of fabricating silicon carbide devices having smooth channels | |
SE0500865L (sv) | Halvledaranordning av kiselkarbid | |
EP1394860A3 (en) | Power devices with improved breakdown voltages | |
WO2009116018A3 (en) | Photovoltaic cell and methods for producing a photovoltaic cell | |
WO2002045177A3 (en) | Epitaxial edge termination for silicon carbide schottky devices and methods of fabricating silicon carbide devices incorporating same | |
EP0881692A3 (en) | Insulated gate semiconductor device and method of manufacturing the same | |
TW200605231A (en) | Silicon carbide devices with hybrid well regions and methods of fabricating silicon carbide devices with hybrid well regions | |
JP2006516815A5 (zh) | ||
TW200705696A (en) | Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same | |
WO2008156071A1 (ja) | 半導体装置 | |
WO2003073468A3 (en) | Silicon carbide bipolar junction transistor with overgrown base region | |
EP1341238A3 (en) | Diode device and transistor device | |
TW200631078A (en) | A method of making a semiconductor structure for high power semiconductor devices | |
TW200608512A (en) | Semiconductor device | |
TW200601543A (en) | High voltage device for electrostatic discharge protective circuit and high voltage device | |
EP1709691B8 (de) | Halbleiterstruktur |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MK4A | Expiration of patent term of an invention patent |