TW200421465A - Method of forming tungsten film - Google Patents
Method of forming tungsten film Download PDFInfo
- Publication number
- TW200421465A TW200421465A TW093106061A TW93106061A TW200421465A TW 200421465 A TW200421465 A TW 200421465A TW 093106061 A TW093106061 A TW 093106061A TW 93106061 A TW93106061 A TW 93106061A TW 200421465 A TW200421465 A TW 200421465A
- Authority
- TW
- Taiwan
- Prior art keywords
- tungsten film
- gas
- forming
- tungsten
- item
- Prior art date
Links
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 262
- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 262
- 239000010937 tungsten Substances 0.000 title claims abstract description 262
- 238000000034 method Methods 0.000 title claims abstract description 246
- 230000008569 process Effects 0.000 claims abstract description 192
- 238000012545 processing Methods 0.000 claims abstract description 111
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 92
- 239000007789 gas Substances 0.000 claims description 205
- 238000002161 passivation Methods 0.000 claims description 52
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 48
- 229910000077 silane Inorganic materials 0.000 claims description 35
- 239000001257 hydrogen Substances 0.000 claims description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 12
- 230000009467 reduction Effects 0.000 claims description 12
- 239000011261 inert gas Substances 0.000 claims description 8
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 claims description 3
- 239000004576 sand Substances 0.000 claims description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- 238000010926 purge Methods 0.000 claims 2
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052722 tritium Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 150000003657 tungsten Chemical class 0.000 abstract 2
- 239000010408 film Substances 0.000 description 227
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 42
- 230000004888 barrier function Effects 0.000 description 19
- 238000010438 heat treatment Methods 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 10
- 238000011010 flushing procedure Methods 0.000 description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 9
- 239000012159 carrier gas Substances 0.000 description 9
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 238000009933 burial Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 229910004469 SiHx Inorganic materials 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910052731 fluorine Inorganic materials 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000003746 surface roughness Effects 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 5
- 239000007806 chemical reaction intermediate Substances 0.000 description 5
- 230000035515 penetration Effects 0.000 description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000012010 growth Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- -1 diborane Chemical compound 0.000 description 2
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- CCEKAJIANROZEO-UHFFFAOYSA-N sulfluramid Chemical group CCNS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F CCEKAJIANROZEO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04D—NON-POSITIVE-DISPLACEMENT PUMPS
- F04D17/00—Radial-flow pumps, e.g. centrifugal pumps; Helico-centrifugal pumps
- F04D17/08—Centrifugal pumps
- F04D17/16—Centrifugal pumps for displacing without appreciable compression
- F04D17/168—Pumps specially adapted to produce a vacuum
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003062443A JP3956049B2 (ja) | 2003-03-07 | 2003-03-07 | タングステン膜の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200421465A true TW200421465A (en) | 2004-10-16 |
| TWI312172B TWI312172B (enExample) | 2009-07-11 |
Family
ID=33124364
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093106061A TW200421465A (en) | 2003-03-07 | 2004-03-08 | Method of forming tungsten film |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP3956049B2 (enExample) |
| KR (2) | KR100785534B1 (enExample) |
| TW (1) | TW200421465A (enExample) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101899649A (zh) * | 2005-07-01 | 2010-12-01 | 东京毅力科创株式会社 | 钨膜的形成方法 |
| CN101208458B (zh) * | 2005-08-11 | 2011-06-08 | 东京毅力科创株式会社 | 金属类膜形成方法 |
| CN108463870A (zh) * | 2016-01-16 | 2018-08-28 | 应用材料公司 | Pecvd含钨硬掩模膜及制造方法 |
| CN110310919A (zh) * | 2013-12-27 | 2019-10-08 | 朗姆研究公司 | 实现低电阻率钨特征填充的钨成核工艺 |
| US12002679B2 (en) | 2019-04-11 | 2024-06-04 | Lam Research Corporation | High step coverage tungsten deposition |
| US12077858B2 (en) | 2019-08-12 | 2024-09-03 | Lam Research Corporation | Tungsten deposition |
| US12237221B2 (en) | 2019-05-22 | 2025-02-25 | Lam Research Corporation | Nucleation-free tungsten deposition |
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| US9076843B2 (en) | 2001-05-22 | 2015-07-07 | Novellus Systems, Inc. | Method for producing ultra-thin tungsten layers with improved step coverage |
| US8268078B2 (en) * | 2006-03-16 | 2012-09-18 | Tokyo Electron Limited | Method and apparatus for reducing particle contamination in a deposition system |
| CN101365822A (zh) | 2006-07-31 | 2009-02-11 | 东京毅力科创株式会社 | 基板处理装置、程序、存储介质和决定是否需要调节的方法 |
| JP2008244298A (ja) * | 2007-03-28 | 2008-10-09 | Tokyo Electron Ltd | 金属膜の成膜方法、多層配線構造の形成方法、半導体装置の製造方法、成膜装置 |
| JP5547380B2 (ja) * | 2008-04-30 | 2014-07-09 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US20100267230A1 (en) * | 2009-04-16 | 2010-10-21 | Anand Chandrashekar | Method for forming tungsten contacts and interconnects with small critical dimensions |
| US9159571B2 (en) | 2009-04-16 | 2015-10-13 | Lam Research Corporation | Tungsten deposition process using germanium-containing reducing agent |
| US10256142B2 (en) | 2009-08-04 | 2019-04-09 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
| US12444651B2 (en) | 2009-08-04 | 2025-10-14 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
| KR20110075915A (ko) * | 2009-12-29 | 2011-07-06 | 주식회사 아토 | 박막 증착방법 |
| JP5959991B2 (ja) | 2011-11-25 | 2016-08-02 | 東京エレクトロン株式会社 | タングステン膜の成膜方法 |
| JP6273257B2 (ja) | 2012-03-27 | 2018-01-31 | ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ | タングステンによるフィーチャ充填 |
| US9153486B2 (en) | 2013-04-12 | 2015-10-06 | Lam Research Corporation | CVD based metal/semiconductor OHMIC contact for high volume manufacturing applications |
| JP6336866B2 (ja) * | 2013-10-23 | 2018-06-06 | 株式会社日立国際電気 | 半導体デバイスの製造方法、基板処理装置およびプログラム |
| WO2015080058A1 (ja) | 2013-11-27 | 2015-06-04 | 東京エレクトロン株式会社 | タングステン膜の成膜方法 |
| JP5950892B2 (ja) | 2013-11-29 | 2016-07-13 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及びプログラム |
| US9589808B2 (en) | 2013-12-19 | 2017-03-07 | Lam Research Corporation | Method for depositing extremely low resistivity tungsten |
| JP6437324B2 (ja) | 2014-03-25 | 2018-12-12 | 東京エレクトロン株式会社 | タングステン膜の成膜方法および半導体装置の製造方法 |
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| JP6391355B2 (ja) | 2014-08-11 | 2018-09-19 | 東京エレクトロン株式会社 | タングステン膜の成膜方法 |
| US9536745B2 (en) | 2015-01-30 | 2017-01-03 | Tokyo Electron Limited | Tungsten film forming method |
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| US9953984B2 (en) | 2015-02-11 | 2018-04-24 | Lam Research Corporation | Tungsten for wordline applications |
| JP6416679B2 (ja) | 2015-03-27 | 2018-10-31 | 東京エレクトロン株式会社 | タングステン膜の成膜方法 |
| US9978605B2 (en) | 2015-05-27 | 2018-05-22 | Lam Research Corporation | Method of forming low resistivity fluorine free tungsten film without nucleation |
| US9754824B2 (en) | 2015-05-27 | 2017-09-05 | Lam Research Corporation | Tungsten films having low fluorine content |
| US9613818B2 (en) | 2015-05-27 | 2017-04-04 | Lam Research Corporation | Deposition of low fluorine tungsten by sequential CVD process |
| JP6541438B2 (ja) | 2015-05-28 | 2019-07-10 | 東京エレクトロン株式会社 | 金属膜のストレス低減方法および金属膜の成膜方法 |
| JP6478813B2 (ja) | 2015-05-28 | 2019-03-06 | 東京エレクトロン株式会社 | 金属膜の成膜方法 |
| WO2017056242A1 (ja) * | 2015-09-30 | 2017-04-06 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置および記録媒体 |
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| KR20190035784A (ko) | 2016-07-26 | 2019-04-03 | 도쿄엘렉트론가부시키가이샤 | 텅스텐막의 성막 방법 |
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| TW202206634A (zh) * | 2020-06-30 | 2022-02-16 | 美商應用材料股份有限公司 | 在低溫下的選擇性鎢沉積 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5342652A (en) * | 1992-06-15 | 1994-08-30 | Materials Research Corporation | Method of nucleating tungsten on titanium nitride by CVD without silane |
| JP3415207B2 (ja) * | 1992-07-24 | 2003-06-09 | 東京エレクトロン株式会社 | 化学気相成長による金属薄膜形成方法 |
| JPH06275624A (ja) * | 1993-03-19 | 1994-09-30 | Miyagi Oki Denki Kk | 導電層の形成方法 |
| JPH0794425A (ja) * | 1993-09-24 | 1995-04-07 | Toshiba Corp | 金属薄膜の形成方法および金属薄膜の形成装置 |
| US6271129B1 (en) * | 1997-12-03 | 2001-08-07 | Applied Materials, Inc. | Method for forming a gap filling refractory metal layer having reduced stress |
| JP3070577B2 (ja) * | 1998-05-15 | 2000-07-31 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP2000265272A (ja) * | 1999-01-13 | 2000-09-26 | Tokyo Electron Ltd | タングステン層の形成方法及びタングステン層の積層構造 |
| JP3628570B2 (ja) * | 1999-12-08 | 2005-03-16 | 旭化成マイクロシステム株式会社 | タングステン薄膜の形成方法、半導体装置の製造方法 |
| US6936538B2 (en) * | 2001-07-16 | 2005-08-30 | Applied Materials, Inc. | Method and apparatus for depositing tungsten after surface treatment to improve film characteristics |
| US7101795B1 (en) * | 2000-06-28 | 2006-09-05 | Applied Materials, Inc. | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer |
| JP2002151435A (ja) * | 2000-10-31 | 2002-05-24 | Applied Materials Inc | 導電部の形成方法 |
| JP4032872B2 (ja) * | 2001-08-14 | 2008-01-16 | 東京エレクトロン株式会社 | タングステン膜の形成方法 |
| US7592256B2 (en) * | 2001-08-14 | 2009-09-22 | Tokyo Electron Limited | Method of forming tungsten film |
| JP4103461B2 (ja) * | 2001-08-24 | 2008-06-18 | 東京エレクトロン株式会社 | 成膜方法 |
-
2003
- 2003-03-07 JP JP2003062443A patent/JP3956049B2/ja not_active Expired - Lifetime
-
2004
- 2004-03-06 KR KR1020040015267A patent/KR100785534B1/ko not_active Expired - Fee Related
- 2004-03-08 TW TW093106061A patent/TW200421465A/zh not_active IP Right Cessation
-
2007
- 2007-06-18 KR KR1020070059454A patent/KR100783845B1/ko not_active Expired - Fee Related
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| CN101899649A (zh) * | 2005-07-01 | 2010-12-01 | 东京毅力科创株式会社 | 钨膜的形成方法 |
| CN101899649B (zh) * | 2005-07-01 | 2012-11-21 | 东京毅力科创株式会社 | 钨膜的形成方法 |
| CN101208458B (zh) * | 2005-08-11 | 2011-06-08 | 东京毅力科创株式会社 | 金属类膜形成方法 |
| CN110310919A (zh) * | 2013-12-27 | 2019-10-08 | 朗姆研究公司 | 实现低电阻率钨特征填充的钨成核工艺 |
| CN108463870A (zh) * | 2016-01-16 | 2018-08-28 | 应用材料公司 | Pecvd含钨硬掩模膜及制造方法 |
| TWI720106B (zh) * | 2016-01-16 | 2021-03-01 | 美商應用材料股份有限公司 | Pecvd含鎢硬遮罩膜及製造方法 |
| US11594415B2 (en) | 2016-01-16 | 2023-02-28 | Applied Materials, Inc. | PECVD tungsten containing hardmask films and methods of making |
| CN108463870B (zh) * | 2016-01-16 | 2023-03-28 | 应用材料公司 | Pecvd含钨硬掩模膜及制造方法 |
| CN116313773A (zh) * | 2016-01-16 | 2023-06-23 | 应用材料公司 | Pecvd含钨硬掩模膜及制造方法 |
| US12002679B2 (en) | 2019-04-11 | 2024-06-04 | Lam Research Corporation | High step coverage tungsten deposition |
| US12237221B2 (en) | 2019-05-22 | 2025-02-25 | Lam Research Corporation | Nucleation-free tungsten deposition |
| US12077858B2 (en) | 2019-08-12 | 2024-09-03 | Lam Research Corporation | Tungsten deposition |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3956049B2 (ja) | 2007-08-08 |
| TWI312172B (enExample) | 2009-07-11 |
| KR20040079331A (ko) | 2004-09-14 |
| KR100785534B1 (ko) | 2007-12-12 |
| KR100783845B1 (ko) | 2007-12-10 |
| JP2004273764A (ja) | 2004-09-30 |
| KR20070075383A (ko) | 2007-07-18 |
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