TW200421465A - Method of forming tungsten film - Google Patents

Method of forming tungsten film Download PDF

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Publication number
TW200421465A
TW200421465A TW093106061A TW93106061A TW200421465A TW 200421465 A TW200421465 A TW 200421465A TW 093106061 A TW093106061 A TW 093106061A TW 93106061 A TW93106061 A TW 93106061A TW 200421465 A TW200421465 A TW 200421465A
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TW
Taiwan
Prior art keywords
tungsten film
gas
forming
tungsten
item
Prior art date
Application number
TW093106061A
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English (en)
Chinese (zh)
Other versions
TWI312172B (enExample
Inventor
Hotaka Ishizuka
Kohichi Satoh
Cheng Fang
Masao Yoshioka
Kenji Suzuki
Yasutaka Mizoguchi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200421465A publication Critical patent/TW200421465A/zh
Application granted granted Critical
Publication of TWI312172B publication Critical patent/TWI312172B/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW093106061A 2003-03-07 2004-03-08 Method of forming tungsten film TW200421465A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003062443A JP3956049B2 (ja) 2003-03-07 2003-03-07 タングステン膜の形成方法

Publications (2)

Publication Number Publication Date
TW200421465A true TW200421465A (en) 2004-10-16
TWI312172B TWI312172B (enExample) 2009-07-11

Family

ID=33124364

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093106061A TW200421465A (en) 2003-03-07 2004-03-08 Method of forming tungsten film

Country Status (3)

Country Link
JP (1) JP3956049B2 (enExample)
KR (2) KR100785534B1 (enExample)
TW (1) TW200421465A (enExample)

Cited By (7)

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CN101899649A (zh) * 2005-07-01 2010-12-01 东京毅力科创株式会社 钨膜的形成方法
CN101208458B (zh) * 2005-08-11 2011-06-08 东京毅力科创株式会社 金属类膜形成方法
CN108463870A (zh) * 2016-01-16 2018-08-28 应用材料公司 Pecvd含钨硬掩模膜及制造方法
CN110310919A (zh) * 2013-12-27 2019-10-08 朗姆研究公司 实现低电阻率钨特征填充的钨成核工艺
US12002679B2 (en) 2019-04-11 2024-06-04 Lam Research Corporation High step coverage tungsten deposition
US12077858B2 (en) 2019-08-12 2024-09-03 Lam Research Corporation Tungsten deposition
US12237221B2 (en) 2019-05-22 2025-02-25 Lam Research Corporation Nucleation-free tungsten deposition

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JP2008244298A (ja) * 2007-03-28 2008-10-09 Tokyo Electron Ltd 金属膜の成膜方法、多層配線構造の形成方法、半導体装置の製造方法、成膜装置
JP5547380B2 (ja) * 2008-04-30 2014-07-09 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9159571B2 (en) 2009-04-16 2015-10-13 Lam Research Corporation Tungsten deposition process using germanium-containing reducing agent
US8623733B2 (en) * 2009-04-16 2014-01-07 Novellus Systems, Inc. Methods for depositing ultra thin low resistivity tungsten film for small critical dimension contacts and interconnects
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
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JP6336866B2 (ja) * 2013-10-23 2018-06-06 株式会社日立国際電気 半導体デバイスの製造方法、基板処理装置およびプログラム
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JP6147913B2 (ja) * 2014-03-28 2017-06-14 株式会社日立国際電気 半導体デバイスの製造方法、基板処理装置およびプログラム
JP6391355B2 (ja) 2014-08-11 2018-09-19 東京エレクトロン株式会社 タングステン膜の成膜方法
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JP6706903B2 (ja) 2015-01-30 2020-06-10 東京エレクトロン株式会社 タングステン膜の成膜方法
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US9613818B2 (en) 2015-05-27 2017-04-04 Lam Research Corporation Deposition of low fluorine tungsten by sequential CVD process
JP6541438B2 (ja) 2015-05-28 2019-07-10 東京エレクトロン株式会社 金属膜のストレス低減方法および金属膜の成膜方法
JP6478813B2 (ja) 2015-05-28 2019-03-06 東京エレクトロン株式会社 金属膜の成膜方法
CN107924829B (zh) * 2015-09-30 2021-07-23 株式会社国际电气 半导体器件的制造方法、衬底处理装置及记录介质
JP6710089B2 (ja) 2016-04-04 2020-06-17 東京エレクトロン株式会社 タングステン膜の成膜方法
WO2018021014A1 (ja) 2016-07-26 2018-02-01 東京エレクトロン株式会社 タングステン膜の成膜方法
JP6865602B2 (ja) * 2017-02-22 2021-04-28 東京エレクトロン株式会社 成膜方法
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US10234630B2 (en) 2017-07-12 2019-03-19 Applied Materials, Inc. Method for creating a high refractive index wave guide
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KR20250073535A (ko) 2017-08-14 2025-05-27 램 리써치 코포레이션 3차원 수직 nand 워드라인을 위한 금속 충진 프로세스
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JP7274461B2 (ja) 2017-09-12 2023-05-16 アプライド マテリアルズ インコーポレイテッド 保護バリア層を使用して半導体構造を製造する装置および方法
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KR102622303B1 (ko) 2017-11-16 2024-01-05 어플라이드 머티어리얼스, 인코포레이티드 고압 스팀 어닐링 프로세싱 장치
JP2021503714A (ja) 2017-11-17 2021-02-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧処理システムのためのコンデンサシステム
JP7299898B2 (ja) 2018-01-24 2023-06-28 アプライド マテリアルズ インコーポレイテッド 高圧アニールを用いたシーム修復
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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101899649A (zh) * 2005-07-01 2010-12-01 东京毅力科创株式会社 钨膜的形成方法
CN101899649B (zh) * 2005-07-01 2012-11-21 东京毅力科创株式会社 钨膜的形成方法
CN101208458B (zh) * 2005-08-11 2011-06-08 东京毅力科创株式会社 金属类膜形成方法
CN110310919A (zh) * 2013-12-27 2019-10-08 朗姆研究公司 实现低电阻率钨特征填充的钨成核工艺
CN108463870A (zh) * 2016-01-16 2018-08-28 应用材料公司 Pecvd含钨硬掩模膜及制造方法
TWI720106B (zh) * 2016-01-16 2021-03-01 美商應用材料股份有限公司 Pecvd含鎢硬遮罩膜及製造方法
US11594415B2 (en) 2016-01-16 2023-02-28 Applied Materials, Inc. PECVD tungsten containing hardmask films and methods of making
CN108463870B (zh) * 2016-01-16 2023-03-28 应用材料公司 Pecvd含钨硬掩模膜及制造方法
CN116313773A (zh) * 2016-01-16 2023-06-23 应用材料公司 Pecvd含钨硬掩模膜及制造方法
US12002679B2 (en) 2019-04-11 2024-06-04 Lam Research Corporation High step coverage tungsten deposition
US12237221B2 (en) 2019-05-22 2025-02-25 Lam Research Corporation Nucleation-free tungsten deposition
US12077858B2 (en) 2019-08-12 2024-09-03 Lam Research Corporation Tungsten deposition

Also Published As

Publication number Publication date
TWI312172B (enExample) 2009-07-11
JP2004273764A (ja) 2004-09-30
JP3956049B2 (ja) 2007-08-08
KR20070075383A (ko) 2007-07-18
KR100785534B1 (ko) 2007-12-12
KR20040079331A (ko) 2004-09-14
KR100783845B1 (ko) 2007-12-10

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