JP3956049B2 - タングステン膜の形成方法 - Google Patents

タングステン膜の形成方法 Download PDF

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Publication number
JP3956049B2
JP3956049B2 JP2003062443A JP2003062443A JP3956049B2 JP 3956049 B2 JP3956049 B2 JP 3956049B2 JP 2003062443 A JP2003062443 A JP 2003062443A JP 2003062443 A JP2003062443 A JP 2003062443A JP 3956049 B2 JP3956049 B2 JP 3956049B2
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Prior art keywords
tungsten film
gas
tungsten
film forming
passivation
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Expired - Lifetime
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JP2003062443A
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Japanese (ja)
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JP2004273764A (ja
Inventor
穂高 石塚
耕一 佐藤
成 方
正雄 吉岡
健二 鈴木
泰隆 溝口
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2003062443A priority Critical patent/JP3956049B2/ja
Priority to KR1020040015267A priority patent/KR100785534B1/ko
Priority to TW093106061A priority patent/TW200421465A/zh
Publication of JP2004273764A publication Critical patent/JP2004273764A/ja
Priority to KR1020070059454A priority patent/KR100783845B1/ko
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2003062443A 2003-03-07 2003-03-07 タングステン膜の形成方法 Expired - Lifetime JP3956049B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2003062443A JP3956049B2 (ja) 2003-03-07 2003-03-07 タングステン膜の形成方法
KR1020040015267A KR100785534B1 (ko) 2003-03-07 2004-03-06 텅스텐막의 형성 방법
TW093106061A TW200421465A (en) 2003-03-07 2004-03-08 Method of forming tungsten film
KR1020070059454A KR100783845B1 (ko) 2003-03-07 2007-06-18 텅스텐막의 형성 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003062443A JP3956049B2 (ja) 2003-03-07 2003-03-07 タングステン膜の形成方法

Publications (2)

Publication Number Publication Date
JP2004273764A JP2004273764A (ja) 2004-09-30
JP3956049B2 true JP3956049B2 (ja) 2007-08-08

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JP2003062443A Expired - Lifetime JP3956049B2 (ja) 2003-03-07 2003-03-07 タングステン膜の形成方法

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JP (1) JP3956049B2 (enExample)
KR (2) KR100785534B1 (enExample)
TW (1) TW200421465A (enExample)

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9076843B2 (en) 2001-05-22 2015-07-07 Novellus Systems, Inc. Method for producing ultra-thin tungsten layers with improved step coverage
JP4945937B2 (ja) 2005-07-01 2012-06-06 東京エレクトロン株式会社 タングステン膜の形成方法、成膜装置及び記憶媒体
JP2007046134A (ja) * 2005-08-11 2007-02-22 Tokyo Electron Ltd 金属系膜形成方法及びプログラムを記録した記録媒体
US8268078B2 (en) * 2006-03-16 2012-09-18 Tokyo Electron Limited Method and apparatus for reducing particle contamination in a deposition system
CN103173739B (zh) 2006-07-31 2015-09-30 东京毅力科创株式会社 基板处理装置、程序、存储介质和决定是否需要调节的方法
JP2008244298A (ja) * 2007-03-28 2008-10-09 Tokyo Electron Ltd 金属膜の成膜方法、多層配線構造の形成方法、半導体装置の製造方法、成膜装置
JP5547380B2 (ja) * 2008-04-30 2014-07-09 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9159571B2 (en) 2009-04-16 2015-10-13 Lam Research Corporation Tungsten deposition process using germanium-containing reducing agent
US8623733B2 (en) * 2009-04-16 2014-01-07 Novellus Systems, Inc. Methods for depositing ultra thin low resistivity tungsten film for small critical dimension contacts and interconnects
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US9653353B2 (en) 2009-08-04 2017-05-16 Novellus Systems, Inc. Tungsten feature fill
US10256142B2 (en) 2009-08-04 2019-04-09 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
KR20110075915A (ko) * 2009-12-29 2011-07-06 주식회사 아토 박막 증착방법
JP5959991B2 (ja) * 2011-11-25 2016-08-02 東京エレクトロン株式会社 タングステン膜の成膜方法
US9153486B2 (en) 2013-04-12 2015-10-06 Lam Research Corporation CVD based metal/semiconductor OHMIC contact for high volume manufacturing applications
JP6336866B2 (ja) * 2013-10-23 2018-06-06 株式会社日立国際電気 半導体デバイスの製造方法、基板処理装置およびプログラム
US20160379879A1 (en) 2013-11-27 2016-12-29 Tokyo Electron Limited Tungsten film forming method
JP5950892B2 (ja) 2013-11-29 2016-07-13 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
US9589808B2 (en) 2013-12-19 2017-03-07 Lam Research Corporation Method for depositing extremely low resistivity tungsten
TWI672737B (zh) * 2013-12-27 2019-09-21 Lam Research Corporation 允許低電阻率鎢特徵物填充之鎢成核程序
JP6437324B2 (ja) 2014-03-25 2018-12-12 東京エレクトロン株式会社 タングステン膜の成膜方法および半導体装置の製造方法
JP6147913B2 (ja) * 2014-03-28 2017-06-14 株式会社日立国際電気 半導体デバイスの製造方法、基板処理装置およびプログラム
JP6391355B2 (ja) 2014-08-11 2018-09-19 東京エレクトロン株式会社 タングステン膜の成膜方法
US9536745B2 (en) 2015-01-30 2017-01-03 Tokyo Electron Limited Tungsten film forming method
JP6706903B2 (ja) 2015-01-30 2020-06-10 東京エレクトロン株式会社 タングステン膜の成膜方法
US9953984B2 (en) 2015-02-11 2018-04-24 Lam Research Corporation Tungsten for wordline applications
JP6416679B2 (ja) 2015-03-27 2018-10-31 東京エレクトロン株式会社 タングステン膜の成膜方法
US9754824B2 (en) 2015-05-27 2017-09-05 Lam Research Corporation Tungsten films having low fluorine content
US9978605B2 (en) 2015-05-27 2018-05-22 Lam Research Corporation Method of forming low resistivity fluorine free tungsten film without nucleation
US9613818B2 (en) 2015-05-27 2017-04-04 Lam Research Corporation Deposition of low fluorine tungsten by sequential CVD process
JP6541438B2 (ja) 2015-05-28 2019-07-10 東京エレクトロン株式会社 金属膜のストレス低減方法および金属膜の成膜方法
JP6478813B2 (ja) 2015-05-28 2019-03-06 東京エレクトロン株式会社 金属膜の成膜方法
CN107924829B (zh) * 2015-09-30 2021-07-23 株式会社国际电气 半导体器件的制造方法、衬底处理装置及记录介质
TWI720106B (zh) * 2016-01-16 2021-03-01 美商應用材料股份有限公司 Pecvd含鎢硬遮罩膜及製造方法
JP6710089B2 (ja) 2016-04-04 2020-06-17 東京エレクトロン株式会社 タングステン膜の成膜方法
WO2018021014A1 (ja) 2016-07-26 2018-02-01 東京エレクトロン株式会社 タングステン膜の成膜方法
JP6865602B2 (ja) * 2017-02-22 2021-04-28 東京エレクトロン株式会社 成膜方法
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
WO2018222771A1 (en) 2017-06-02 2018-12-06 Applied Materials, Inc. Dry stripping of boron carbide hardmask
US10234630B2 (en) 2017-07-12 2019-03-19 Applied Materials, Inc. Method for creating a high refractive index wave guide
US10269571B2 (en) 2017-07-12 2019-04-23 Applied Materials, Inc. Methods for fabricating nanowire for semiconductor applications
US10179941B1 (en) 2017-07-14 2019-01-15 Applied Materials, Inc. Gas delivery system for high pressure processing chamber
KR20250073535A (ko) 2017-08-14 2025-05-27 램 리써치 코포레이션 3차원 수직 nand 워드라인을 위한 금속 충진 프로세스
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
KR102405723B1 (ko) 2017-08-18 2022-06-07 어플라이드 머티어리얼스, 인코포레이티드 고압 및 고온 어닐링 챔버
JP7274461B2 (ja) 2017-09-12 2023-05-16 アプライド マテリアルズ インコーポレイテッド 保護バリア層を使用して半導体構造を製造する装置および方法
US10643867B2 (en) 2017-11-03 2020-05-05 Applied Materials, Inc. Annealing system and method
JP7112490B2 (ja) 2017-11-11 2022-08-03 マイクロマテリアルズ エルエルシー 高圧処理チャンバのためのガス供給システム
KR102622303B1 (ko) 2017-11-16 2024-01-05 어플라이드 머티어리얼스, 인코포레이티드 고압 스팀 어닐링 프로세싱 장치
JP2021503714A (ja) 2017-11-17 2021-02-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧処理システムのためのコンデンサシステム
JP7299898B2 (ja) 2018-01-24 2023-06-28 アプライド マテリアルズ インコーポレイテッド 高圧アニールを用いたシーム修復
WO2019173006A1 (en) 2018-03-09 2019-09-12 Applied Materials, Inc. High pressure annealing process for metal containing materials
US10714331B2 (en) 2018-04-04 2020-07-14 Applied Materials, Inc. Method to fabricate thermally stable low K-FinFET spacer
WO2019213604A1 (en) 2018-05-03 2019-11-07 Lam Research Corporation Method of depositing tungsten and other metals in 3d nand structures
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10566188B2 (en) 2018-05-17 2020-02-18 Applied Materials, Inc. Method to improve film stability
US10704141B2 (en) 2018-06-01 2020-07-07 Applied Materials, Inc. In-situ CVD and ALD coating of chamber to control metal contamination
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US10675581B2 (en) 2018-08-06 2020-06-09 Applied Materials, Inc. Gas abatement apparatus
CN112640065B (zh) 2018-10-30 2024-10-01 应用材料公司 用于蚀刻用于半导体应用的结构的方法
WO2020101935A1 (en) 2018-11-16 2020-05-22 Applied Materials, Inc. Film deposition using enhanced diffusion process
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
JP7649741B2 (ja) 2018-12-14 2025-03-21 ラム リサーチ コーポレーション ３ｄ ｎａｎｄ構造上の原子層堆積
US12002679B2 (en) 2019-04-11 2024-06-04 Lam Research Corporation High step coverage tungsten deposition
JP2022533834A (ja) 2019-05-22 2022-07-26 ラム リサーチ コーポレーション 核生成のないタングステン堆積
US12077858B2 (en) 2019-08-12 2024-09-03 Lam Research Corporation Tungsten deposition
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
TWI920099B (zh) * 2020-06-30 2026-04-01 美商應用材料股份有限公司 在低溫下的選擇性鎢沉積
WO2022130559A1 (ja) * 2020-12-17 2022-06-23 株式会社Kokusai Electric 半導体装置の製造方法、プログラム及び基板処理装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5342652A (en) * 1992-06-15 1994-08-30 Materials Research Corporation Method of nucleating tungsten on titanium nitride by CVD without silane
JP3415207B2 (ja) * 1992-07-24 2003-06-09 東京エレクトロン株式会社 化学気相成長による金属薄膜形成方法
JPH06275624A (ja) * 1993-03-19 1994-09-30 Miyagi Oki Denki Kk 導電層の形成方法
JPH0794425A (ja) * 1993-09-24 1995-04-07 Toshiba Corp 金属薄膜の形成方法および金属薄膜の形成装置
US6271129B1 (en) * 1997-12-03 2001-08-07 Applied Materials, Inc. Method for forming a gap filling refractory metal layer having reduced stress
JP3070577B2 (ja) * 1998-05-15 2000-07-31 日本電気株式会社 半導体装置の製造方法
WO2000042232A1 (en) * 1999-01-13 2000-07-20 Tokyo Electron Limited Tungsten layer forming method and laminate structure of tungsten layer
JP3628570B2 (ja) * 1999-12-08 2005-03-16 旭化成マイクロシステム株式会社 タングステン薄膜の形成方法、半導体装置の製造方法
US7101795B1 (en) * 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US6936538B2 (en) * 2001-07-16 2005-08-30 Applied Materials, Inc. Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
JP2002151435A (ja) * 2000-10-31 2002-05-24 Applied Materials Inc 導電部の形成方法
US7592256B2 (en) * 2001-08-14 2009-09-22 Tokyo Electron Limited Method of forming tungsten film
JP4032872B2 (ja) * 2001-08-14 2008-01-16 東京エレクトロン株式会社 タングステン膜の形成方法
JP4103461B2 (ja) * 2001-08-24 2008-06-18 東京エレクトロン株式会社 成膜方法

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TWI312172B (enExample) 2009-07-11
TW200421465A (en) 2004-10-16
JP2004273764A (ja) 2004-09-30
KR20070075383A (ko) 2007-07-18
KR100785534B1 (ko) 2007-12-12
KR20040079331A (ko) 2004-09-14
KR100783845B1 (ko) 2007-12-10

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