KR100785534B1 - 텅스텐막의 형성 방법 - Google Patents

텅스텐막의 형성 방법 Download PDF

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Publication number
KR100785534B1
KR100785534B1 KR1020040015267A KR20040015267A KR100785534B1 KR 100785534 B1 KR100785534 B1 KR 100785534B1 KR 1020040015267 A KR1020040015267 A KR 1020040015267A KR 20040015267 A KR20040015267 A KR 20040015267A KR 100785534 B1 KR100785534 B1 KR 100785534B1
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tungsten film
gas
forming
tungsten
supplying
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Korean (ko)
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KR20040079331A (ko
Inventor
이시즈카호타카
사토고히치
쳉팡
요시오카마사오
스즈키겐지
미조구치야스타카
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동경 엘렉트론 주식회사
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04D—NON-POSITIVE-DISPLACEMENT PUMPS
    • F04D17/00—Radial-flow pumps, e.g. centrifugal pumps; Helico-centrifugal pumps
    • F04D17/08—Centrifugal pumps
    • F04D17/16—Centrifugal pumps for displacing without appreciable compression
    • F04D17/168—Pumps specially adapted to produce a vacuum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020040015267A 2003-03-07 2004-03-06 텅스텐막의 형성 방법 Expired - Fee Related KR100785534B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003062443A JP3956049B2 (ja) 2003-03-07 2003-03-07 タングステン膜の形成方法
JPJP-P-2003-00062443 2003-03-07

Related Child Applications (1)

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KR1020070059454A Division KR100783845B1 (ko) 2003-03-07 2007-06-18 텅스텐막의 형성 방법

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KR20040079331A KR20040079331A (ko) 2004-09-14
KR100785534B1 true KR100785534B1 (ko) 2007-12-12

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KR1020040015267A Expired - Fee Related KR100785534B1 (ko) 2003-03-07 2004-03-06 텅스텐막의 형성 방법
KR1020070059454A Expired - Fee Related KR100783845B1 (ko) 2003-03-07 2007-06-18 텅스텐막의 형성 방법

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JP (1) JP3956049B2 (enExample)
KR (2) KR100785534B1 (enExample)
TW (1) TW200421465A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110075915A (ko) * 2009-12-29 2011-07-06 주식회사 아토 박막 증착방법
KR20180095946A (ko) * 2016-01-16 2018-08-28 어플라이드 머티어리얼스, 인코포레이티드 Pecvd 텅스텐 함유 하드마스크 막들 및 그 제조 방법들

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JP2007046134A (ja) * 2005-08-11 2007-02-22 Tokyo Electron Ltd 金属系膜形成方法及びプログラムを記録した記録媒体
US8268078B2 (en) * 2006-03-16 2012-09-18 Tokyo Electron Limited Method and apparatus for reducing particle contamination in a deposition system
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JP5547380B2 (ja) * 2008-04-30 2014-07-09 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US20100267230A1 (en) * 2009-04-16 2010-10-21 Anand Chandrashekar Method for forming tungsten contacts and interconnects with small critical dimensions
US9159571B2 (en) 2009-04-16 2015-10-13 Lam Research Corporation Tungsten deposition process using germanium-containing reducing agent
US10256142B2 (en) 2009-08-04 2019-04-09 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
JP5959991B2 (ja) 2011-11-25 2016-08-02 東京エレクトロン株式会社 タングステン膜の成膜方法
JP6273257B2 (ja) 2012-03-27 2018-01-31 ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ タングステンによるフィーチャ充填
US9153486B2 (en) 2013-04-12 2015-10-06 Lam Research Corporation CVD based metal/semiconductor OHMIC contact for high volume manufacturing applications
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WO2015080058A1 (ja) 2013-11-27 2015-06-04 東京エレクトロン株式会社 タングステン膜の成膜方法
JP5950892B2 (ja) 2013-11-29 2016-07-13 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
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JP6437324B2 (ja) 2014-03-25 2018-12-12 東京エレクトロン株式会社 タングステン膜の成膜方法および半導体装置の製造方法
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US9978605B2 (en) 2015-05-27 2018-05-22 Lam Research Corporation Method of forming low resistivity fluorine free tungsten film without nucleation
US9754824B2 (en) 2015-05-27 2017-09-05 Lam Research Corporation Tungsten films having low fluorine content
US9613818B2 (en) 2015-05-27 2017-04-04 Lam Research Corporation Deposition of low fluorine tungsten by sequential CVD process
JP6541438B2 (ja) 2015-05-28 2019-07-10 東京エレクトロン株式会社 金属膜のストレス低減方法および金属膜の成膜方法
JP6478813B2 (ja) 2015-05-28 2019-03-06 東京エレクトロン株式会社 金属膜の成膜方法
WO2017056242A1 (ja) * 2015-09-30 2017-04-06 株式会社日立国際電気 半導体装置の製造方法、基板処理装置および記録媒体
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110075915A (ko) * 2009-12-29 2011-07-06 주식회사 아토 박막 증착방법
KR20180095946A (ko) * 2016-01-16 2018-08-28 어플라이드 머티어리얼스, 인코포레이티드 Pecvd 텅스텐 함유 하드마스크 막들 및 그 제조 방법들
KR102710609B1 (ko) * 2016-01-16 2024-09-25 어플라이드 머티어리얼스, 인코포레이티드 Pecvd 텅스텐 함유 하드마스크 막들 및 그 제조 방법들

Also Published As

Publication number Publication date
JP3956049B2 (ja) 2007-08-08
TW200421465A (en) 2004-10-16
TWI312172B (enExample) 2009-07-11
KR20040079331A (ko) 2004-09-14
KR100783845B1 (ko) 2007-12-10
JP2004273764A (ja) 2004-09-30
KR20070075383A (ko) 2007-07-18

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