SG83793A1 - Method for forming a copper layer over a semiconductor wafer - Google Patents

Method for forming a copper layer over a semiconductor wafer

Info

Publication number
SG83793A1
SG83793A1 SG200002365A SG200002365A SG83793A1 SG 83793 A1 SG83793 A1 SG 83793A1 SG 200002365 A SG200002365 A SG 200002365A SG 200002365 A SG200002365 A SG 200002365A SG 83793 A1 SG83793 A1 SG 83793A1
Authority
SG
Singapore
Prior art keywords
cycles
powered
positive
copper layer
pulsed
Prior art date
Application number
SG200002365A
Other languages
English (en)
Inventor
Cindy Reidsema Simpson
Robert Douglas Mikkola
Matthew T Herrick
Brett Caroline Baker
David Moralez Pena
Edward Acosta
Rina Chowdhury
Marijean Azrak
Cindy Kay Goldberg
Mohammed Rabiul Islam
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of SG83793A1 publication Critical patent/SG83793A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Physical Vapour Deposition (AREA)
SG200002365A 1999-05-03 2000-04-27 Method for forming a copper layer over a semiconductor wafer SG83793A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/305,093 US6297155B1 (en) 1999-05-03 1999-05-03 Method for forming a copper layer over a semiconductor wafer

Publications (1)

Publication Number Publication Date
SG83793A1 true SG83793A1 (en) 2001-10-16

Family

ID=23179301

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200002365A SG83793A1 (en) 1999-05-03 2000-04-27 Method for forming a copper layer over a semiconductor wafer

Country Status (8)

Country Link
US (1) US6297155B1 (ko)
EP (1) EP1050902B1 (ko)
JP (4) JP4790894B2 (ko)
KR (1) KR100707120B1 (ko)
CN (1) CN1197128C (ko)
AT (1) ATE317155T1 (ko)
DE (1) DE60025773T2 (ko)
SG (1) SG83793A1 (ko)

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Also Published As

Publication number Publication date
JP4791594B2 (ja) 2011-10-12
JP4791593B2 (ja) 2011-10-12
KR20010014857A (ko) 2001-02-26
DE60025773T2 (de) 2006-07-20
JP2011091425A (ja) 2011-05-06
JP2011063888A (ja) 2011-03-31
DE60025773D1 (de) 2006-04-13
EP1050902A3 (en) 2001-04-11
JP5296043B2 (ja) 2013-09-25
EP1050902B1 (en) 2006-02-01
JP2011066447A (ja) 2011-03-31
US6297155B1 (en) 2001-10-02
ATE317155T1 (de) 2006-02-15
EP1050902A2 (en) 2000-11-08
CN1197128C (zh) 2005-04-13
KR100707120B1 (ko) 2007-04-16
JP4790894B2 (ja) 2011-10-12
JP2000353675A (ja) 2000-12-19
CN1272685A (zh) 2000-11-08

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