SG71198A1 - Buried paterned conductor planes for semiconductor-on-insulator integrated circuit - Google Patents
Buried paterned conductor planes for semiconductor-on-insulator integrated circuitInfo
- Publication number
- SG71198A1 SG71198A1 SG1999001073A SG1999001073A SG71198A1 SG 71198 A1 SG71198 A1 SG 71198A1 SG 1999001073 A SG1999001073 A SG 1999001073A SG 1999001073 A SG1999001073 A SG 1999001073A SG 71198 A1 SG71198 A1 SG 71198A1
- Authority
- SG
- Singapore
- Prior art keywords
- paterned
- buried
- semiconductor
- integrated circuit
- conductor planes
- Prior art date
Links
- 239000004020 conductor Substances 0.000 title 1
- 239000012212 insulator Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/049,488 US6121659A (en) | 1998-03-27 | 1998-03-27 | Buried patterned conductor planes for semiconductor-on-insulator integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
SG71198A1 true SG71198A1 (en) | 2000-03-21 |
Family
ID=21960089
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1999001073A SG71198A1 (en) | 1998-03-27 | 1999-03-08 | Buried paterned conductor planes for semiconductor-on-insulator integrated circuit |
Country Status (7)
Country | Link |
---|---|
US (1) | US6121659A (de) |
EP (1) | EP0948054A3 (de) |
JP (1) | JPH11330489A (de) |
KR (1) | KR100331523B1 (de) |
CN (1) | CN100379003C (de) |
SG (1) | SG71198A1 (de) |
TW (1) | TW452887B (de) |
Families Citing this family (80)
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TW444266B (en) * | 1998-07-23 | 2001-07-01 | Canon Kk | Semiconductor substrate and method of producing same |
US6188122B1 (en) * | 1999-01-14 | 2001-02-13 | International Business Machines Corporation | Buried capacitor for silicon-on-insulator structure |
FR2792775B1 (fr) * | 1999-04-20 | 2001-11-23 | France Telecom | Dispositif de circuit integre comprenant une inductance a haut coefficient de qualite |
JP2000323660A (ja) * | 1999-05-11 | 2000-11-24 | Mitsubishi Electric Corp | 半導体装置及びその製造方法並びにウェハの製造方法 |
JP2001111056A (ja) * | 1999-10-06 | 2001-04-20 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US6483147B1 (en) * | 1999-10-25 | 2002-11-19 | Advanced Micro Devices, Inc. | Through wafer backside contact to improve SOI heat dissipation |
JP2001125943A (ja) * | 1999-10-28 | 2001-05-11 | Nec Corp | 電源デカップリング回路の設計方法および設計支援システム |
US6429099B1 (en) * | 2000-01-05 | 2002-08-06 | International Business Machines Corporation | Implementing contacts for bodies of semiconductor-on-insulator transistors |
US6287901B1 (en) * | 2000-01-05 | 2001-09-11 | International Business Machines Corporation | Method and semiconductor structure for implementing dual plane body contacts for silicon-on-insulator (SOI) transistors |
JP2001339071A (ja) * | 2000-03-22 | 2001-12-07 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US6303414B1 (en) * | 2000-07-12 | 2001-10-16 | Chartered Semiconductor Manufacturing Ltd. | Method of forming PID protection diode for SOI wafer |
JP3843708B2 (ja) * | 2000-07-14 | 2006-11-08 | 日本電気株式会社 | 半導体装置およびその製造方法ならびに薄膜コンデンサ |
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JP2004207271A (ja) * | 2002-12-20 | 2004-07-22 | Nec Electronics Corp | Soi基板及び半導体集積回路装置 |
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JP2010114380A (ja) * | 2008-11-10 | 2010-05-20 | Toshiba Corp | 半導体装置 |
US20120043540A1 (en) * | 2009-03-16 | 2012-02-23 | Tomohiro Kimura | Semiconductor device, method for manufacturing same, and display device |
US7807570B1 (en) | 2009-06-11 | 2010-10-05 | International Business Machines Corporation | Local metallization and use thereof in semiconductor devices |
CN102484097B (zh) * | 2009-07-15 | 2016-05-25 | 斯兰纳半导体美国股份有限公司 | 具有背侧支撑层的绝缘体上半导体 |
EP2937898A1 (de) | 2009-07-15 | 2015-10-28 | Silanna Semiconductor U.S.A., Inc. | Halbleiter-auf-isolator mit rückseitiger wärmeableitung |
US8912646B2 (en) | 2009-07-15 | 2014-12-16 | Silanna Semiconductor U.S.A., Inc. | Integrated circuit assembly and method of making |
US9496227B2 (en) | 2009-07-15 | 2016-11-15 | Qualcomm Incorporated | Semiconductor-on-insulator with back side support layer |
TWI515878B (zh) * | 2009-07-15 | 2016-01-01 | 西拉娜半導體美國股份有限公司 | 絕緣體上半導體結構、自絕緣體上半導體主動元件之通道去除無用積聚多數型載子之方法、及製造積體電路之方法 |
US9390974B2 (en) | 2012-12-21 | 2016-07-12 | Qualcomm Incorporated | Back-to-back stacked integrated circuit assembly and method of making |
US9466719B2 (en) | 2009-07-15 | 2016-10-11 | Qualcomm Incorporated | Semiconductor-on-insulator with back side strain topology |
IT1398204B1 (it) | 2010-02-16 | 2013-02-14 | St Microelectronics Srl | Sistema e metodo per eseguire il test elettrico di vie passanti nel silicio (tsv - through silicon vias). |
CN102870175B (zh) | 2010-02-19 | 2014-06-04 | 王明亮 | 硅基功率电感 |
US9461169B2 (en) | 2010-05-28 | 2016-10-04 | Globalfoundries Inc. | Device and method for fabricating thin semiconductor channel and buried strain memorization layer |
DE102011002877B4 (de) | 2011-01-19 | 2019-07-18 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Verfahren zur Herstellung eines SOI-Halbleiterbauelements mit einer Substratdiode und einer Schichtdiode, die unter Anwendung einer gemeinsamen Wannenimplantationsmaske hergestellt sind |
JP2012015538A (ja) * | 2011-08-29 | 2012-01-19 | Renesas Electronics Corp | 半導体装置 |
US10529866B2 (en) * | 2012-05-30 | 2020-01-07 | X-Fab Semiconductor Foundries Gmbh | Semiconductor device |
US9379202B2 (en) * | 2012-11-12 | 2016-06-28 | Nvidia Corporation | Decoupling capacitors for interposers |
KR101976039B1 (ko) * | 2012-12-04 | 2019-08-28 | 삼성전자 주식회사 | 반도체 장치 |
US9515181B2 (en) | 2014-08-06 | 2016-12-06 | Qualcomm Incorporated | Semiconductor device with self-aligned back side features |
CN104733446B (zh) * | 2015-04-22 | 2017-12-26 | 杭州士兰集成电路有限公司 | 半导体电阻结构及其形成方法 |
US9716036B2 (en) | 2015-06-08 | 2017-07-25 | Globalfoundries Inc. | Electronic device including moat power metallization in trench |
US9837412B2 (en) | 2015-12-09 | 2017-12-05 | Peregrine Semiconductor Corporation | S-contact for SOI |
KR102633136B1 (ko) * | 2019-01-10 | 2024-02-02 | 삼성전자주식회사 | 집적회로 칩과 이를 포함하는 집적회로 패키지 및 디스플레이 장치 |
KR20200133630A (ko) | 2019-05-20 | 2020-11-30 | 삼성전자주식회사 | 집적회로 소자 및 그 제조 방법 |
CN110767652B (zh) * | 2019-11-06 | 2022-02-18 | 中北大学 | 具有自散热功能的惠斯通电桥结构及制造方法 |
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JPS58100441A (ja) * | 1981-12-10 | 1983-06-15 | Toshiba Corp | 半導体装置の製造方法 |
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-
1998
- 1998-03-27 US US09/049,488 patent/US6121659A/en not_active Expired - Lifetime
-
1999
- 1999-02-08 TW TW088101862A patent/TW452887B/zh not_active IP Right Cessation
- 1999-02-13 KR KR1019990005258A patent/KR100331523B1/ko not_active IP Right Cessation
- 1999-03-08 SG SG1999001073A patent/SG71198A1/en unknown
- 1999-03-17 CN CNB991041119A patent/CN100379003C/zh not_active Expired - Lifetime
- 1999-03-23 JP JP11077904A patent/JPH11330489A/ja active Pending
- 1999-03-25 EP EP99302313A patent/EP0948054A3/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
EP0948054A2 (de) | 1999-10-06 |
JPH11330489A (ja) | 1999-11-30 |
KR19990077435A (ko) | 1999-10-25 |
CN1230788A (zh) | 1999-10-06 |
CN100379003C (zh) | 2008-04-02 |
KR100331523B1 (ko) | 2002-04-06 |
US6121659A (en) | 2000-09-19 |
EP0948054A3 (de) | 2003-08-27 |
TW452887B (en) | 2001-09-01 |
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