AU3113097A - Conductors for integrated circuits - Google Patents

Conductors for integrated circuits

Info

Publication number
AU3113097A
AU3113097A AU31130/97A AU3113097A AU3113097A AU 3113097 A AU3113097 A AU 3113097A AU 31130/97 A AU31130/97 A AU 31130/97A AU 3113097 A AU3113097 A AU 3113097A AU 3113097 A AU3113097 A AU 3113097A
Authority
AU
Australia
Prior art keywords
conductors
integrated circuits
circuits
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU31130/97A
Inventor
Ted Johansson
Hans Erik Norstrom
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefonaktiebolaget LM Ericsson AB
Original Assignee
Telefonaktiebolaget LM Ericsson AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefonaktiebolaget LM Ericsson AB filed Critical Telefonaktiebolaget LM Ericsson AB
Publication of AU3113097A publication Critical patent/AU3113097A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/10—Inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/645—Inductive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Coils Or Transformers For Communication (AREA)
AU31130/97A 1996-05-31 1997-05-30 Conductors for integrated circuits Abandoned AU3113097A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE9602191A SE510443C2 (en) 1996-05-31 1996-05-31 Inductors for integrated circuits
SE9602191 1996-05-31
PCT/SE1997/000954 WO1997045873A1 (en) 1996-05-31 1997-05-30 Conductors for integrated circuits

Publications (1)

Publication Number Publication Date
AU3113097A true AU3113097A (en) 1998-01-05

Family

ID=20402861

Family Applications (1)

Application Number Title Priority Date Filing Date
AU31130/97A Abandoned AU3113097A (en) 1996-05-31 1997-05-30 Conductors for integrated circuits

Country Status (8)

Country Link
EP (1) EP0902974A1 (en)
JP (1) JP2000511350A (en)
KR (1) KR100298480B1 (en)
CN (1) CN1220778A (en)
AU (1) AU3113097A (en)
CA (1) CA2256763A1 (en)
SE (1) SE510443C2 (en)
WO (1) WO1997045873A1 (en)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1021828B1 (en) 1997-07-11 2010-01-06 Infineon Technologies AG A process for manufacturing ic-components to be used at radio frequencies
KR19990055422A (en) * 1997-12-27 1999-07-15 정선종 Inductor device on silicon substrate and manufacturing method thereof
JP3942264B2 (en) * 1998-03-11 2007-07-11 富士通株式会社 Inductance element formed on a semiconductor substrate
DE19810825A1 (en) * 1998-03-12 1999-09-16 Siemens Ag Electronic integrated circuit
EP0966040A1 (en) * 1998-06-19 1999-12-22 International Business Machines Corporation Passive component above isolation trenches
KR20000011585A (en) 1998-07-28 2000-02-25 윤덕용 Semiconductor device and method for manufacturing the same
US6278186B1 (en) 1998-08-26 2001-08-21 Intersil Corporation Parasitic current barriers
DE19910983A1 (en) * 1999-03-12 2000-09-21 Bosch Gmbh Robert Device and method for determining the lateral undercut of a structured surface layer
AU5711000A (en) * 1999-07-08 2001-01-30 Korea Advanced Institute Of Science And Technology Method for manufacturing a semiconductor device having a metal layer floating over a substrate
DE19944306B4 (en) * 1999-09-15 2005-05-19 Infineon Technologies Ag Integrated semiconductor integrated coil circuit and method of making the same
SG98398A1 (en) 2000-05-25 2003-09-19 Inst Of Microelectronics Integrated circuit inductor
FR2810451A1 (en) * 2000-06-20 2001-12-21 Koninkl Philips Electronics Nv INTEGRATED CIRCUIT INCLUDING A HIGH QUALITY FACTOR INDUCTIVE ELEMENT AND HAVING HIGH COMPACITY
KR20020014225A (en) * 2000-08-17 2002-02-25 박종섭 Integrated device having insulator layer in trench overlapped with fine inductor and method for foming the same
DE10041084A1 (en) * 2000-08-22 2002-03-14 Infineon Technologies Ag Method for forming a dielectric region in a semiconductor substrate
DE10041691A1 (en) * 2000-08-24 2002-03-14 Infineon Technologies Ag A semiconductor device
EP1213762A1 (en) * 2000-12-05 2002-06-12 Koninklijke Philips Electronics N.V. Electrical device isolation structure
EP1454354B1 (en) 2001-12-13 2015-04-15 ams AG Silicon substrate having an insulating layer, silicon substrate, and assembly of a silicon substrate with an insulating layer
DE10163460B4 (en) * 2001-12-21 2010-05-27 Austriamicrosystems Ag Silicon substrate with an insulating layer and arrangement with a silicon substrate with an insulating layer
DE102004022139B4 (en) * 2004-05-05 2007-10-18 Atmel Germany Gmbh A method for producing a spiral inductance on a substrate and a device produced by such a method
JP3927565B2 (en) * 2004-06-25 2007-06-13 インターナショナル・ビジネス・マシーンズ・コーポレーション On-chip inductor with magnetic core
CN101149761B (en) * 2006-09-20 2012-02-08 爱斯泰克（上海）高频通讯技术有限公司 Double pi asymmetrical model parameter extraction method for silicon base spiral inductor equivalent circuit
CN102208405B (en) * 2010-08-24 2015-11-25 华东师范大学 planar spiral inductor
CN102456612A (en) * 2010-10-27 2012-05-16 上海华虹Nec电子有限公司 Manufacturing method and structure of semiconductor integrated inductor
JP5699905B2 (en) * 2011-10-28 2015-04-15 株式会社デンソー Semiconductor device
CN114823638A (en) * 2022-04-27 2022-07-29 电子科技大学 Integrated inductance structure with low parasitic capacitance

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0377360A (en) * 1989-08-18 1991-04-02 Mitsubishi Electric Corp Semiconductor device
US5336921A (en) * 1992-01-27 1994-08-09 Motorola, Inc. Vertical trench inductor
WO1994017558A1 (en) * 1993-01-29 1994-08-04 The Regents Of The University Of California Monolithic passive component
WO1996002070A2 (en) * 1994-07-12 1996-01-25 National Semiconductor Corporation Integrated circuit comprising a trench isolation structure and an oxygen barrier layer and method for forming the integrated circuit
US5446311A (en) * 1994-09-16 1995-08-29 International Business Machines Corporation High-Q inductors in silicon technology without expensive metalization

Also Published As

Publication number Publication date
EP0902974A1 (en) 1999-03-24
KR20000010660A (en) 2000-02-25
SE9602191D0 (en) 1996-05-31
WO1997045873A1 (en) 1997-12-04
JP2000511350A (en) 2000-08-29
KR100298480B1 (en) 2001-08-07
CA2256763A1 (en) 1997-12-04
SE510443C2 (en) 1999-05-25
SE9602191L (en) 1997-12-01
CN1220778A (en) 1999-06-23

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