WO1998052216A1
(en)
*
|
1997-05-12 |
1998-11-19 |
Silicon Genesis Corporation |
A controlled cleavage process
|
US6033974A
(en)
|
1997-05-12 |
2000-03-07 |
Silicon Genesis Corporation |
Method for controlled cleaving process
|
US6291313B1
(en)
|
1997-05-12 |
2001-09-18 |
Silicon Genesis Corporation |
Method and device for controlled cleaving process
|
US6146979A
(en)
|
1997-05-12 |
2000-11-14 |
Silicon Genesis Corporation |
Pressurized microbubble thin film separation process using a reusable substrate
|
EP0926709A3
(en)
|
1997-12-26 |
2000-08-30 |
Canon Kabushiki Kaisha |
Method of manufacturing an SOI structure
|
TW437078B
(en)
|
1998-02-18 |
2001-05-28 |
Canon Kk |
Composite member, its separation method, and preparation method of semiconductor substrate by utilization thereof
|
US6291326B1
(en)
|
1998-06-23 |
2001-09-18 |
Silicon Genesis Corporation |
Pre-semiconductor process implant and post-process film separation
|
US6423614B1
(en)
*
|
1998-06-30 |
2002-07-23 |
Intel Corporation |
Method of delaminating a thin film using non-thermal techniques
|
JP3395661B2
(ja)
*
|
1998-07-07 |
2003-04-14 |
信越半導体株式会社 |
Soiウエーハの製造方法
|
US7153729B1
(en)
*
|
1998-07-15 |
2006-12-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
|
US7294535B1
(en)
*
|
1998-07-15 |
2007-11-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
|
US7282398B2
(en)
*
|
1998-07-17 |
2007-10-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and method of fabricating the same
|
US7084016B1
(en)
*
|
1998-07-17 |
2006-08-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
|
US6559036B1
(en)
|
1998-08-07 |
2003-05-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method of manufacturing the same
|
US6890827B1
(en)
*
|
1999-01-13 |
2005-05-10 |
Agere Systems Inc. |
Method of fabricating a silicon on insulator transistor structure for imbedded DRAM
|
JP4313874B2
(ja)
*
|
1999-02-02 |
2009-08-12 |
キヤノン株式会社 |
基板の製造方法
|
US6664169B1
(en)
*
|
1999-06-08 |
2003-12-16 |
Canon Kabushiki Kaisha |
Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus
|
US6221740B1
(en)
|
1999-08-10 |
2001-04-24 |
Silicon Genesis Corporation |
Substrate cleaving tool and method
|
US6263941B1
(en)
|
1999-08-10 |
2001-07-24 |
Silicon Genesis Corporation |
Nozzle for cleaving substrates
|
JP3975634B2
(ja)
*
|
2000-01-25 |
2007-09-12 |
信越半導体株式会社 |
半導体ウェハの製作法
|
JP2001237403A
(ja)
*
|
2000-02-21 |
2001-08-31 |
Rohm Co Ltd |
半導体装置の製法および超薄型半導体装置
|
JP2001284622A
(ja)
|
2000-03-31 |
2001-10-12 |
Canon Inc |
半導体部材の製造方法及び太陽電池の製造方法
|
JP2001291850A
(ja)
*
|
2000-04-10 |
2001-10-19 |
Hitachi Cable Ltd |
結晶シリコン薄膜の製造方法
|
DE10032579B4
(de)
|
2000-07-05 |
2020-07-02 |
Robert Bosch Gmbh |
Verfahren zur Herstellung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement
|
FR2840731B3
(fr)
*
|
2002-06-11 |
2004-07-30 |
Soitec Silicon On Insulator |
Procede de fabrication d'un substrat comportant une couche utile en materiau semi-conducteur monocristallin de proprietes ameliorees
|
US8507361B2
(en)
|
2000-11-27 |
2013-08-13 |
Soitec |
Fabrication of substrates with a useful layer of monocrystalline semiconductor material
|
US6420243B1
(en)
*
|
2000-12-04 |
2002-07-16 |
Motorola, Inc. |
Method for producing SOI wafers by delamination
|
JP2002305293A
(ja)
*
|
2001-04-06 |
2002-10-18 |
Canon Inc |
半導体部材の製造方法及び半導体装置の製造方法
|
TW574753B
(en)
*
|
2001-04-13 |
2004-02-01 |
Sony Corp |
Manufacturing method of thin film apparatus and semiconductor device
|
US7238622B2
(en)
*
|
2001-04-17 |
2007-07-03 |
California Institute Of Technology |
Wafer bonded virtual substrate and method for forming the same
|
US20050026432A1
(en)
*
|
2001-04-17 |
2005-02-03 |
Atwater Harry A. |
Wafer bonded epitaxial templates for silicon heterostructures
|
WO2002084725A1
(en)
*
|
2001-04-17 |
2002-10-24 |
California Institute Of Technology |
A method of using a germanium layer transfer to si for photovoltaic applications and heterostructure made thereby
|
US7045878B2
(en)
*
|
2001-05-18 |
2006-05-16 |
Reveo, Inc. |
Selectively bonded thin film layer and substrate layer for processing of useful devices
|
US6956268B2
(en)
*
|
2001-05-18 |
2005-10-18 |
Reveo, Inc. |
MEMS and method of manufacturing MEMS
|
KR100456526B1
(ko)
*
|
2001-05-22 |
2004-11-09 |
삼성전자주식회사 |
식각저지막을 갖는 에스오아이 기판, 그 제조방법, 그위에 제작된 에스오아이 집적회로 및 그것을 사용하여에스오아이 집적회로를 제조하는 방법
|
US8415208B2
(en)
|
2001-07-16 |
2013-04-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and peeling off method and method of manufacturing semiconductor device
|
JP2003109773A
(ja)
*
|
2001-07-27 |
2003-04-11 |
Semiconductor Energy Lab Co Ltd |
発光装置、半導体装置およびそれらの作製方法
|
JP5057619B2
(ja)
*
|
2001-08-01 |
2012-10-24 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
TW554398B
(en)
*
|
2001-08-10 |
2003-09-21 |
Semiconductor Energy Lab |
Method of peeling off and method of manufacturing semiconductor device
|
US7351300B2
(en)
|
2001-08-22 |
2008-04-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Peeling method and method of manufacturing semiconductor device
|
US6806171B1
(en)
|
2001-08-24 |
2004-10-19 |
Silicon Wafer Technologies, Inc. |
Method of producing a thin layer of crystalline material
|
US7033910B2
(en)
*
|
2001-09-12 |
2006-04-25 |
Reveo, Inc. |
Method of fabricating multi layer MEMS and microfluidic devices
|
US6875671B2
(en)
*
|
2001-09-12 |
2005-04-05 |
Reveo, Inc. |
Method of fabricating vertical integrated circuits
|
US7163826B2
(en)
*
|
2001-09-12 |
2007-01-16 |
Reveo, Inc |
Method of fabricating multi layer devices on buried oxide layer substrates
|
JP2003110108A
(ja)
*
|
2001-09-28 |
2003-04-11 |
Mitsubishi Electric Corp |
半導体装置の製造方法及びその構造
|
KR100944886B1
(ko)
*
|
2001-10-30 |
2010-03-03 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치의 제조 방법
|
TWI264121B
(en)
*
|
2001-11-30 |
2006-10-11 |
Semiconductor Energy Lab |
A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device
|
US7202139B2
(en)
*
|
2002-02-07 |
2007-04-10 |
Taiwan Semiconductor Manufacturing Company , Ltd. |
MOSFET device with a strained channel
|
DE60325669D1
(de)
|
2002-05-17 |
2009-02-26 |
Semiconductor Energy Lab |
Verfahren zum Transferieren eines Objekts und Verfahren zur Herstellung eines Halbleiterbauelements
|
US6979630B2
(en)
*
|
2002-08-08 |
2005-12-27 |
Isonics Corporation |
Method and apparatus for transferring a thin layer of semiconductor material
|
WO2004040648A1
(ja)
|
2002-10-30 |
2004-05-13 |
Semiconductor Energy Laboratory Co., Ltd. |
半導体装置および半導体装置の作製方法
|
FR2849269B1
(fr)
*
|
2002-12-20 |
2005-07-29 |
Soitec Silicon On Insulator |
Procede de realisation de cavites dans une plaque de silicium
|
JP2004281998A
(ja)
*
|
2003-01-23 |
2004-10-07 |
Seiko Epson Corp |
トランジスタとその製造方法、電気光学装置、半導体装置並びに電子機器
|
US7485926B2
(en)
*
|
2003-01-30 |
2009-02-03 |
X-Fab Semiconductor Foundries Ag |
SOI contact structures
|
WO2004071948A2
(en)
*
|
2003-02-10 |
2004-08-26 |
Reveo, Inc. |
Micro-nozzle, nano-nozzle, manufacturing methods therefor, applications therefor
|
US7592239B2
(en)
*
|
2003-04-30 |
2009-09-22 |
Industry University Cooperation Foundation-Hanyang University |
Flexible single-crystal film and method of manufacturing the same
|
US20040218133A1
(en)
*
|
2003-04-30 |
2004-11-04 |
Park Jong-Wan |
Flexible electro-optical apparatus and method for manufacturing the same
|
US7256104B2
(en)
*
|
2003-05-21 |
2007-08-14 |
Canon Kabushiki Kaisha |
Substrate manufacturing method and substrate processing apparatus
|
FR2855909B1
(fr)
|
2003-06-06 |
2005-08-26 |
Soitec Silicon On Insulator |
Procede d'obtention concomitante d'au moins une paire de structures comprenant au moins une couche utile reportee sur un substrat
|
FR2855910B1
(fr)
*
|
2003-06-06 |
2005-07-15 |
Commissariat Energie Atomique |
Procede d'obtention d'une couche tres mince par amincissement par auto-portage provoque
|
TWI242232B
(en)
*
|
2003-06-09 |
2005-10-21 |
Canon Kk |
Semiconductor substrate, semiconductor device, and method of manufacturing the same
|
FR2858875B1
(fr)
*
|
2003-08-12 |
2006-02-10 |
Soitec Silicon On Insulator |
Procede de realisation de couches minces de materiau semi-conducteur a partir d'une plaquette donneuse
|
US7279369B2
(en)
*
|
2003-08-21 |
2007-10-09 |
Intel Corporation |
Germanium on insulator fabrication via epitaxial germanium bonding
|
US6967167B2
(en)
*
|
2003-09-30 |
2005-11-22 |
International Business Machines Corporation |
Silicon dioxide removing method
|
JP2005136383A
(ja)
*
|
2003-10-09 |
2005-05-26 |
Canon Inc |
有機半導体素子、その製造方法および有機半導体装置
|
FR2861497B1
(fr)
*
|
2003-10-28 |
2006-02-10 |
Soitec Silicon On Insulator |
Procede de transfert catastrophique d'une couche fine apres co-implantation
|
US7964925B2
(en)
*
|
2006-10-13 |
2011-06-21 |
Hewlett-Packard Development Company, L.P. |
Photodiode module and apparatus including multiple photodiode modules
|
US20050132332A1
(en)
*
|
2003-12-12 |
2005-06-16 |
Abhay Sathe |
Multi-location coordinated test apparatus
|
WO2005104192A2
(en)
*
|
2004-04-21 |
2005-11-03 |
California Institute Of Technology |
A METHOD FOR THE FABRICATION OF GaAs/Si AND RELATED WAFER BONDED VIRTUAL SUBSTRATES
|
WO2006015185A2
(en)
*
|
2004-07-30 |
2006-02-09 |
Aonex Technologies, Inc. |
GaInP/GaAs/Si TRIPLE JUNCTION SOLAR CELL ENABLED BY WAFER BONDING AND LAYER TRANSFER
|
US7846759B2
(en)
*
|
2004-10-21 |
2010-12-07 |
Aonex Technologies, Inc. |
Multi-junction solar cells and methods of making same using layer transfer and bonding techniques
|
CN1317739C
(zh)
*
|
2004-11-23 |
2007-05-23 |
中国电子科技集团公司第二十四研究所 |
在具有图形的绝缘硅基衬底上制作硅薄膜的方法
|
DE102004060363B4
(de)
*
|
2004-12-15 |
2010-12-16 |
Austriamicrosystems Ag |
Halbleitersubstrat mit pn-Übergang und Verfahren zur Herstellung
|
US10374120B2
(en)
*
|
2005-02-18 |
2019-08-06 |
Koninklijke Philips N.V. |
High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials
|
WO2006116030A2
(en)
*
|
2005-04-21 |
2006-11-02 |
Aonex Technologies, Inc. |
Bonded intermediate substrate and method of making same
|
JP5042506B2
(ja)
*
|
2006-02-16 |
2012-10-03 |
信越化学工業株式会社 |
半導体基板の製造方法
|
US20070243703A1
(en)
*
|
2006-04-14 |
2007-10-18 |
Aonex Technololgies, Inc. |
Processes and structures for epitaxial growth on laminate substrates
|
US7459344B2
(en)
*
|
2006-08-10 |
2008-12-02 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Method for forming micromachined structure
|
US9362439B2
(en)
|
2008-05-07 |
2016-06-07 |
Silicon Genesis Corporation |
Layer transfer of films utilizing controlled shear region
|
US8993410B2
(en)
|
2006-09-08 |
2015-03-31 |
Silicon Genesis Corporation |
Substrate cleaving under controlled stress conditions
|
US7642934B2
(en)
*
|
2006-11-10 |
2010-01-05 |
Research In Motion Limited |
Method of mapping a traditional touchtone keypad on a handheld electronic device and associated apparatus
|
US7732301B1
(en)
|
2007-04-20 |
2010-06-08 |
Pinnington Thomas Henry |
Bonded intermediate substrate and method of making same
|
US20090278233A1
(en)
*
|
2007-07-26 |
2009-11-12 |
Pinnington Thomas Henry |
Bonded intermediate substrate and method of making same
|
CN100595882C
(zh)
*
|
2007-12-28 |
2010-03-24 |
上海新傲科技股份有限公司 |
以键合减薄制备绝缘体上硅的方法
|
US7868374B2
(en)
*
|
2008-02-21 |
2011-01-11 |
International Business Machines Corporation |
Semitubular metal-oxide-semiconductor field effect transistor
|
US8987115B2
(en)
*
|
2008-08-21 |
2015-03-24 |
Alliance For Sustainable Energy, Llc |
Epitaxial growth of silicon for layer transfer
|
US8871610B2
(en)
*
|
2008-10-02 |
2014-10-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing SOI substrate
|
JP5611571B2
(ja)
*
|
2008-11-27 |
2014-10-22 |
株式会社半導体エネルギー研究所 |
半導体基板の作製方法及び半導体装置の作製方法
|
DE102009053262A1
(de)
*
|
2009-11-13 |
2011-05-19 |
Institut Für Solarenergieforschung Gmbh |
Verfahren zum Bilden von dünnen Halbleiterschichtsubstraten sowie Verfahren zum Herstellen eines Halbleiterbauelements, insbesondere einer Solarzelle, mit einem solchen Halbleiterschichtsubstrat
|
CN101789466B
(zh)
*
|
2010-02-10 |
2011-12-07 |
上海理工大学 |
太阳能电池制作方法
|
JP5460418B2
(ja)
*
|
2010-03-29 |
2014-04-02 |
オリジン電気株式会社 |
接合部材の製造方法及び接合部材製造装置
|
RU2469433C1
(ru)
*
|
2011-07-13 |
2012-12-10 |
Юрий Георгиевич Шретер |
Способ лазерного отделения эпитаксиальной пленки или слоя эпитаксиальной пленки от ростовой подложки эпитаксиальной полупроводниковой структуры (варианты)
|
CN103021812B
(zh)
*
|
2012-12-20 |
2016-02-17 |
中国科学院上海微系统与信息技术研究所 |
一种ⅲ-ⅴoi结构的制备方法
|
WO2014129519A1
(en)
|
2013-02-20 |
2014-08-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Peeling method, semiconductor device, and peeling apparatus
|
WO2015087192A1
(en)
|
2013-12-12 |
2015-06-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Peeling method and peeling apparatus
|
WO2016090636A1
(zh)
*
|
2014-12-12 |
2016-06-16 |
浙江中纳晶微电子科技有限公司 |
一种晶圆临时键合及分离的方法
|
CN110676205B
(zh)
*
|
2019-09-17 |
2023-01-06 |
中国电子科技集团公司第十一研究所 |
芯片的衬底的多次使用方法及红外探测器
|
CN110890418B
(zh)
*
|
2019-12-02 |
2021-11-05 |
中国科学院上海微系统与信息技术研究所 |
一种具有双埋氧层的晶体管结构及其制备方法
|
US11908723B2
(en)
*
|
2021-12-03 |
2024-02-20 |
International Business Machines Corporation |
Silicon handler with laser-release layers
|