SG63832A1 - Substrate and production method thereof - Google Patents

Substrate and production method thereof

Info

Publication number
SG63832A1
SG63832A1 SG1998000596A SG1998000596A SG63832A1 SG 63832 A1 SG63832 A1 SG 63832A1 SG 1998000596 A SG1998000596 A SG 1998000596A SG 1998000596 A SG1998000596 A SG 1998000596A SG 63832 A1 SG63832 A1 SG 63832A1
Authority
SG
Singapore
Prior art keywords
substrate
production method
production
Prior art date
Application number
SG1998000596A
Other languages
English (en)
Inventor
Kiyofumi Sakaguchi
Nobuhiko Sato
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of SG63832A1 publication Critical patent/SG63832A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
SG1998000596A 1997-03-26 1998-03-23 Substrate and production method thereof SG63832A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7351897 1997-03-26

Publications (1)

Publication Number Publication Date
SG63832A1 true SG63832A1 (en) 1999-03-30

Family

ID=13520554

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1998000596A SG63832A1 (en) 1997-03-26 1998-03-23 Substrate and production method thereof

Country Status (8)

Country Link
US (2) US6221738B1 (ko)
EP (1) EP0867921A3 (ko)
KR (1) KR100265539B1 (ko)
CN (1) CN1139969C (ko)
AU (1) AU744654B2 (ko)
CA (1) CA2233096C (ko)
SG (1) SG63832A1 (ko)
TW (1) TW447127B (ko)

Families Citing this family (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998052216A1 (en) * 1997-05-12 1998-11-19 Silicon Genesis Corporation A controlled cleavage process
US6033974A (en) 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US6291313B1 (en) 1997-05-12 2001-09-18 Silicon Genesis Corporation Method and device for controlled cleaving process
US6146979A (en) 1997-05-12 2000-11-14 Silicon Genesis Corporation Pressurized microbubble thin film separation process using a reusable substrate
EP0926709A3 (en) 1997-12-26 2000-08-30 Canon Kabushiki Kaisha Method of manufacturing an SOI structure
TW437078B (en) 1998-02-18 2001-05-28 Canon Kk Composite member, its separation method, and preparation method of semiconductor substrate by utilization thereof
US6291326B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
US6423614B1 (en) * 1998-06-30 2002-07-23 Intel Corporation Method of delaminating a thin film using non-thermal techniques
JP3395661B2 (ja) * 1998-07-07 2003-04-14 信越半導体株式会社 Ｓｏｉウエーハの製造方法
US7153729B1 (en) * 1998-07-15 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7294535B1 (en) * 1998-07-15 2007-11-13 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7282398B2 (en) * 1998-07-17 2007-10-16 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and method of fabricating the same
US7084016B1 (en) * 1998-07-17 2006-08-01 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US6559036B1 (en) 1998-08-07 2003-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6890827B1 (en) * 1999-01-13 2005-05-10 Agere Systems Inc. Method of fabricating a silicon on insulator transistor structure for imbedded DRAM
JP4313874B2 (ja) * 1999-02-02 2009-08-12 キヤノン株式会社 基板の製造方法
US6664169B1 (en) * 1999-06-08 2003-12-16 Canon Kabushiki Kaisha Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus
US6221740B1 (en) 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
JP3975634B2 (ja) * 2000-01-25 2007-09-12 信越半導体株式会社 半導体ウェハの製作法
JP2001237403A (ja) * 2000-02-21 2001-08-31 Rohm Co Ltd 半導体装置の製法および超薄型半導体装置
JP2001284622A (ja) 2000-03-31 2001-10-12 Canon Inc 半導体部材の製造方法及び太陽電池の製造方法
JP2001291850A (ja) * 2000-04-10 2001-10-19 Hitachi Cable Ltd 結晶シリコン薄膜の製造方法
DE10032579B4 (de) 2000-07-05 2020-07-02 Robert Bosch Gmbh Verfahren zur Herstellung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement
FR2840731B3 (fr) * 2002-06-11 2004-07-30 Soitec Silicon On Insulator Procede de fabrication d'un substrat comportant une couche utile en materiau semi-conducteur monocristallin de proprietes ameliorees
US8507361B2 (en) 2000-11-27 2013-08-13 Soitec Fabrication of substrates with a useful layer of monocrystalline semiconductor material
US6420243B1 (en) * 2000-12-04 2002-07-16 Motorola, Inc. Method for producing SOI wafers by delamination
JP2002305293A (ja) * 2001-04-06 2002-10-18 Canon Inc 半導体部材の製造方法及び半導体装置の製造方法
TW574753B (en) * 2001-04-13 2004-02-01 Sony Corp Manufacturing method of thin film apparatus and semiconductor device
US7238622B2 (en) * 2001-04-17 2007-07-03 California Institute Of Technology Wafer bonded virtual substrate and method for forming the same
US20050026432A1 (en) * 2001-04-17 2005-02-03 Atwater Harry A. Wafer bonded epitaxial templates for silicon heterostructures
WO2002084725A1 (en) * 2001-04-17 2002-10-24 California Institute Of Technology A method of using a germanium layer transfer to si for photovoltaic applications and heterostructure made thereby
US7045878B2 (en) * 2001-05-18 2006-05-16 Reveo, Inc. Selectively bonded thin film layer and substrate layer for processing of useful devices
US6956268B2 (en) * 2001-05-18 2005-10-18 Reveo, Inc. MEMS and method of manufacturing MEMS
KR100456526B1 (ko) * 2001-05-22 2004-11-09 삼성전자주식회사 식각저지막을 갖는 에스오아이 기판, 그 제조방법, 그위에 제작된 에스오아이 집적회로 및 그것을 사용하여에스오아이 집적회로를 제조하는 방법
US8415208B2 (en) 2001-07-16 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
JP2003109773A (ja) * 2001-07-27 2003-04-11 Semiconductor Energy Lab Co Ltd 発光装置、半導体装置およびそれらの作製方法
JP5057619B2 (ja) * 2001-08-01 2012-10-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW554398B (en) * 2001-08-10 2003-09-21 Semiconductor Energy Lab Method of peeling off and method of manufacturing semiconductor device
US7351300B2 (en) 2001-08-22 2008-04-01 Semiconductor Energy Laboratory Co., Ltd. Peeling method and method of manufacturing semiconductor device
US6806171B1 (en) 2001-08-24 2004-10-19 Silicon Wafer Technologies, Inc. Method of producing a thin layer of crystalline material
US7033910B2 (en) * 2001-09-12 2006-04-25 Reveo, Inc. Method of fabricating multi layer MEMS and microfluidic devices
US6875671B2 (en) * 2001-09-12 2005-04-05 Reveo, Inc. Method of fabricating vertical integrated circuits
US7163826B2 (en) * 2001-09-12 2007-01-16 Reveo, Inc Method of fabricating multi layer devices on buried oxide layer substrates
JP2003110108A (ja) * 2001-09-28 2003-04-11 Mitsubishi Electric Corp 半導体装置の製造方法及びその構造
KR100944886B1 (ko) * 2001-10-30 2010-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제조 방법
TWI264121B (en) * 2001-11-30 2006-10-11 Semiconductor Energy Lab A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device
US7202139B2 (en) * 2002-02-07 2007-04-10 Taiwan Semiconductor Manufacturing Company , Ltd. MOSFET device with a strained channel
DE60325669D1 (de) 2002-05-17 2009-02-26 Semiconductor Energy Lab Verfahren zum Transferieren eines Objekts und Verfahren zur Herstellung eines Halbleiterbauelements
US6979630B2 (en) * 2002-08-08 2005-12-27 Isonics Corporation Method and apparatus for transferring a thin layer of semiconductor material
WO2004040648A1 (ja) 2002-10-30 2004-05-13 Semiconductor Energy Laboratory Co., Ltd. 半導体装置および半導体装置の作製方法
FR2849269B1 (fr) * 2002-12-20 2005-07-29 Soitec Silicon On Insulator Procede de realisation de cavites dans une plaque de silicium
JP2004281998A (ja) * 2003-01-23 2004-10-07 Seiko Epson Corp トランジスタとその製造方法、電気光学装置、半導体装置並びに電子機器
US7485926B2 (en) * 2003-01-30 2009-02-03 X-Fab Semiconductor Foundries Ag SOI contact structures
WO2004071948A2 (en) * 2003-02-10 2004-08-26 Reveo, Inc. Micro-nozzle, nano-nozzle, manufacturing methods therefor, applications therefor
US7592239B2 (en) * 2003-04-30 2009-09-22 Industry University Cooperation Foundation-Hanyang University Flexible single-crystal film and method of manufacturing the same
US20040218133A1 (en) * 2003-04-30 2004-11-04 Park Jong-Wan Flexible electro-optical apparatus and method for manufacturing the same
US7256104B2 (en) * 2003-05-21 2007-08-14 Canon Kabushiki Kaisha Substrate manufacturing method and substrate processing apparatus
FR2855909B1 (fr) 2003-06-06 2005-08-26 Soitec Silicon On Insulator Procede d'obtention concomitante d'au moins une paire de structures comprenant au moins une couche utile reportee sur un substrat
FR2855910B1 (fr) * 2003-06-06 2005-07-15 Commissariat Energie Atomique Procede d'obtention d'une couche tres mince par amincissement par auto-portage provoque
TWI242232B (en) * 2003-06-09 2005-10-21 Canon Kk Semiconductor substrate, semiconductor device, and method of manufacturing the same
FR2858875B1 (fr) * 2003-08-12 2006-02-10 Soitec Silicon On Insulator Procede de realisation de couches minces de materiau semi-conducteur a partir d'une plaquette donneuse
US7279369B2 (en) * 2003-08-21 2007-10-09 Intel Corporation Germanium on insulator fabrication via epitaxial germanium bonding
US6967167B2 (en) * 2003-09-30 2005-11-22 International Business Machines Corporation Silicon dioxide removing method
JP2005136383A (ja) * 2003-10-09 2005-05-26 Canon Inc 有機半導体素子、その製造方法および有機半導体装置
FR2861497B1 (fr) * 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
US7964925B2 (en) * 2006-10-13 2011-06-21 Hewlett-Packard Development Company, L.P. Photodiode module and apparatus including multiple photodiode modules
US20050132332A1 (en) * 2003-12-12 2005-06-16 Abhay Sathe Multi-location coordinated test apparatus
WO2005104192A2 (en) * 2004-04-21 2005-11-03 California Institute Of Technology A METHOD FOR THE FABRICATION OF GaAs/Si AND RELATED WAFER BONDED VIRTUAL SUBSTRATES
WO2006015185A2 (en) * 2004-07-30 2006-02-09 Aonex Technologies, Inc. GaInP/GaAs/Si TRIPLE JUNCTION SOLAR CELL ENABLED BY WAFER BONDING AND LAYER TRANSFER
US7846759B2 (en) * 2004-10-21 2010-12-07 Aonex Technologies, Inc. Multi-junction solar cells and methods of making same using layer transfer and bonding techniques
CN1317739C (zh) * 2004-11-23 2007-05-23 中国电子科技集团公司第二十四研究所 在具有图形的绝缘硅基衬底上制作硅薄膜的方法
DE102004060363B4 (de) * 2004-12-15 2010-12-16 Austriamicrosystems Ag Halbleitersubstrat mit pn-Übergang und Verfahren zur Herstellung
US10374120B2 (en) * 2005-02-18 2019-08-06 Koninklijke Philips N.V. High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials
WO2006116030A2 (en) * 2005-04-21 2006-11-02 Aonex Technologies, Inc. Bonded intermediate substrate and method of making same
JP5042506B2 (ja) * 2006-02-16 2012-10-03 信越化学工業株式会社 半導体基板の製造方法
US20070243703A1 (en) * 2006-04-14 2007-10-18 Aonex Technololgies, Inc. Processes and structures for epitaxial growth on laminate substrates
US7459344B2 (en) * 2006-08-10 2008-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming micromachined structure
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US7642934B2 (en) * 2006-11-10 2010-01-05 Research In Motion Limited Method of mapping a traditional touchtone keypad on a handheld electronic device and associated apparatus
US7732301B1 (en) 2007-04-20 2010-06-08 Pinnington Thomas Henry Bonded intermediate substrate and method of making same
US20090278233A1 (en) * 2007-07-26 2009-11-12 Pinnington Thomas Henry Bonded intermediate substrate and method of making same
CN100595882C (zh) * 2007-12-28 2010-03-24 上海新傲科技股份有限公司 以键合减薄制备绝缘体上硅的方法
US7868374B2 (en) * 2008-02-21 2011-01-11 International Business Machines Corporation Semitubular metal-oxide-semiconductor field effect transistor
US8987115B2 (en) * 2008-08-21 2015-03-24 Alliance For Sustainable Energy, Llc Epitaxial growth of silicon for layer transfer
US8871610B2 (en) * 2008-10-02 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
JP5611571B2 (ja) * 2008-11-27 2014-10-22 株式会社半導体エネルギー研究所 半導体基板の作製方法及び半導体装置の作製方法
DE102009053262A1 (de) * 2009-11-13 2011-05-19 Institut Für Solarenergieforschung Gmbh Verfahren zum Bilden von dünnen Halbleiterschichtsubstraten sowie Verfahren zum Herstellen eines Halbleiterbauelements, insbesondere einer Solarzelle, mit einem solchen Halbleiterschichtsubstrat
CN101789466B (zh) * 2010-02-10 2011-12-07 上海理工大学 太阳能电池制作方法
JP5460418B2 (ja) * 2010-03-29 2014-04-02 オリジン電気株式会社 接合部材の製造方法及び接合部材製造装置
RU2469433C1 (ru) * 2011-07-13 2012-12-10 Юрий Георгиевич Шретер Способ лазерного отделения эпитаксиальной пленки или слоя эпитаксиальной пленки от ростовой подложки эпитаксиальной полупроводниковой структуры (варианты)
CN103021812B (zh) * 2012-12-20 2016-02-17 中国科学院上海微系统与信息技术研究所 一种ⅲ-ⅴoi结构的制备方法
WO2014129519A1 (en) 2013-02-20 2014-08-28 Semiconductor Energy Laboratory Co., Ltd. Peeling method, semiconductor device, and peeling apparatus
WO2015087192A1 (en) 2013-12-12 2015-06-18 Semiconductor Energy Laboratory Co., Ltd. Peeling method and peeling apparatus
WO2016090636A1 (zh) * 2014-12-12 2016-06-16 浙江中纳晶微电子科技有限公司 一种晶圆临时键合及分离的方法
CN110676205B (zh) * 2019-09-17 2023-01-06 中国电子科技集团公司第十一研究所 芯片的衬底的多次使用方法及红外探测器
CN110890418B (zh) * 2019-12-02 2021-11-05 中国科学院上海微系统与信息技术研究所 一种具有双埋氧层的晶体管结构及其制备方法
US11908723B2 (en) * 2021-12-03 2024-02-20 International Business Machines Corporation Silicon handler with laser-release layers

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3176676D1 (en) 1980-04-10 1988-04-07 Massachusetts Inst Technology Methods of producing sheets of crystalline material and devices amde therefrom
US4445965A (en) * 1980-12-01 1984-05-01 Carnegie-Mellon University Method for making thin film cadmium telluride and related semiconductors for solar cells
US4906594A (en) * 1987-06-12 1990-03-06 Agency Of Industrial Science And Technology Surface smoothing method and method of forming SOI substrate using the surface smoothing method
JPH01131031A (ja) * 1987-11-16 1989-05-23 Seiko Epson Corp ガラス転写体の製造方法
EP0369053B1 (de) 1988-11-17 1994-03-02 International Business Machines Corporation Verfahren zur Herstellung von Masken mit Strukturen im Submikrometerbereich
CA1315574C (en) 1989-02-02 1993-04-06 Aron M. Rosenfeld Colour change devices incorporating thin anodic films
KR950014609B1 (ko) 1990-08-03 1995-12-11 캐논 가부시끼가이샤 반도체부재 및 반도체부재의 제조방법
US5750000A (en) 1990-08-03 1998-05-12 Canon Kabushiki Kaisha Semiconductor member, and process for preparing same and semiconductor device formed by use of same
US5198371A (en) * 1990-09-24 1993-03-30 Biota Corp. Method of making silicon material with enhanced surface mobility by hydrogen ion implantation
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
EP1043768B1 (en) * 1992-01-30 2004-09-08 Canon Kabushiki Kaisha Process for producing semiconductor substrates
DE69331816T2 (de) * 1992-01-31 2002-08-29 Canon K.K., Tokio/Tokyo Verfahren zur Herstellung eines Halbleitersubstrats
JP3261685B2 (ja) 1992-01-31 2002-03-04 キヤノン株式会社 半導体素子基体及びその作製方法
TW330313B (en) * 1993-12-28 1998-04-21 Canon Kk A semiconductor substrate and process for producing same
JP3293736B2 (ja) * 1996-02-28 2002-06-17 キヤノン株式会社 半導体基板の作製方法および貼り合わせ基体
JP3257580B2 (ja) 1994-03-10 2002-02-18 キヤノン株式会社 半導体基板の作製方法
FR2725074B1 (fr) 1994-09-22 1996-12-20 Commissariat Energie Atomique Procede de fabrication d'une structure comportant une couche mince semi-conductrice sur un substrat
US6107213A (en) 1996-02-01 2000-08-22 Sony Corporation Method for making thin film semiconductor
JP3381443B2 (ja) 1995-02-02 2003-02-24 ソニー株式会社 基体から半導体層を分離する方法、半導体素子の製造方法およびｓｏｉ基板の製造方法
FR2738671B1 (fr) * 1995-09-13 1997-10-10 Commissariat Energie Atomique Procede de fabrication de films minces a materiau semiconducteur
CN1132223C (zh) * 1995-10-06 2003-12-24 佳能株式会社 半导体衬底及其制造方法
US5710057A (en) 1996-07-12 1998-01-20 Kenney; Donald M. SOI fabrication method
SG55413A1 (en) 1996-11-15 1998-12-21 Method Of Manufacturing Semico Method of manufacturing semiconductor article
SG65697A1 (en) 1996-11-15 1999-06-22 Canon Kk Process for producing semiconductor article
US6054363A (en) 1996-11-15 2000-04-25 Canon Kabushiki Kaisha Method of manufacturing semiconductor article
CA2225131C (en) 1996-12-18 2002-01-01 Canon Kabushiki Kaisha Process for producing semiconductor article
CA2233115C (en) 1997-03-27 2002-03-12 Canon Kabushiki Kaisha Semiconductor substrate and method of manufacturing the same
US6146979A (en) * 1997-05-12 2000-11-14 Silicon Genesis Corporation Pressurized microbubble thin film separation process using a reusable substrate

Also Published As

Publication number Publication date
TW447127B (en) 2001-07-21
AU744654B2 (en) 2002-02-28
AU5952298A (en) 1998-10-01
CA2233096A1 (en) 1998-09-26
CN1139969C (zh) 2004-02-25
CA2233096C (en) 2003-01-07
KR100265539B1 (ko) 2000-09-15
US6221738B1 (en) 2001-04-24
US6569748B1 (en) 2003-05-27
CN1206221A (zh) 1999-01-27
KR19980080687A (ko) 1998-11-25
EP0867921A3 (en) 1999-03-17
EP0867921A2 (en) 1998-09-30

Similar Documents

Publication Publication Date Title
SG63832A1 (en) Substrate and production method thereof
AU6420398A (en) Photovoltaic element and method for manufacture thereof
EP0916449A4 (en) Wire saw and making the same
SG63669A1 (en) Semiconductor substrate and producing method thereof
EP0609861A3 (en) Ceramic substrate and manufacturing process.
GB9828640D0 (en) Novel method and compounds
HUP0004419A3 (en) Novel aryloxy-alkyl-dialkylamines and process for producing them
EP1070496A4 (en) METHOD FOR PRODUCING TABLETS AND TABLET
GB9710547D0 (en) Coating method
SG47370A1 (en) Substrate independent superpolishing process and slurry
EP0953997A4 (en) ELECTRONIC COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
EP0967507A4 (en) DISPLAY AND ITS MANUFACTURING PROCESS
GB9702221D0 (en) Antenna and fabrication method
GB2324198B (en) Tape-fixed leadframe and fabrication method thereof
SG54376A1 (en) Coating material manufacturing method thereof and coating method using the coating material
AU6420598A (en) Circuit board and production method thereof
AUPO752297A0 (en) Manufacturing process and apparatus
GB9819651D0 (en) Matrerial and process for its production
EP0922769A4 (en) HYDROLYSATE OF THE IRON-CASE COMPLEX AND A METHOD FOR ITS PRODUCTION.
GB2328391B (en) Substrate facing method and kit
GB9814953D0 (en) Preform and production method therefor
GB9704499D0 (en) Method of manufacture
IL118990A (en) Decorative plate and method for manufacturing same
ZA988803B (en) Novel FT-0554 substance and its production
GB9822065D0 (en) Method and material