SG176566A1 - Methods for constructing an optimal endpoint algorithm - Google Patents
Methods for constructing an optimal endpoint algorithm Download PDFInfo
- Publication number
- SG176566A1 SG176566A1 SG2011085149A SG2011085149A SG176566A1 SG 176566 A1 SG176566 A1 SG 176566A1 SG 2011085149 A SG2011085149 A SG 2011085149A SG 2011085149 A SG2011085149 A SG 2011085149A SG 176566 A1 SG176566 A1 SG 176566A1
- Authority
- SG
- Singapore
- Prior art keywords
- endpoint
- potential
- signatures
- real
- optimal
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 88
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 230000008569 process Effects 0.000 claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 claims abstract description 26
- 238000012545 processing Methods 0.000 claims abstract description 25
- 238000012360 testing method Methods 0.000 claims description 40
- 238000004458 analytical method Methods 0.000 claims description 31
- 238000010219 correlation analysis Methods 0.000 claims description 8
- YFVOXLJXJBQDEF-UHFFFAOYSA-N isocarbophos Chemical compound COP(N)(=S)OC1=CC=CC=C1C(=O)OC(C)C YFVOXLJXJBQDEF-UHFFFAOYSA-N 0.000 claims 1
- 230000008859 change Effects 0.000 description 27
- 238000000491 multivariate analysis Methods 0.000 description 9
- 238000005259 measurement Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 4
- 230000036961 partial effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 238000007405 data analysis Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 241000272168 Laridae Species 0.000 description 1
- 241000252067 Megalops atlanticus Species 0.000 description 1
- 102100030624 Proton myo-inositol cotransporter Human genes 0.000 description 1
- 101710095091 Proton myo-inositol cotransporter Proteins 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 230000003467 diminishing effect Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010239 partial least squares discriminant analysis Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22210209P | 2009-06-30 | 2009-06-30 | |
| US22202409P | 2009-06-30 | 2009-06-30 | |
| US12/555,674 US8983631B2 (en) | 2009-06-30 | 2009-09-08 | Arrangement for identifying uncontrolled events at the process module level and methods thereof |
| PCT/US2010/040477 WO2011002810A2 (en) | 2009-06-30 | 2010-06-29 | Methods for constructing an optimal endpoint algorithm |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG176566A1 true SG176566A1 (en) | 2012-01-30 |
Family
ID=43411705
Family Applications (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2011085149A SG176566A1 (en) | 2009-06-30 | 2010-06-29 | Methods for constructing an optimal endpoint algorithm |
| SG2011085172A SG176567A1 (en) | 2009-06-30 | 2010-06-29 | Arrangement for identifying uncontrolled events at the process module level and methods thereof |
| SG2011085107A SG176147A1 (en) | 2009-06-30 | 2010-06-29 | Methods and arrangements for in-situ process monitoring and control for plasma processing tools |
| SG2011085131A SG176565A1 (en) | 2009-06-30 | 2010-06-29 | Methods and apparatus to predict etch rate uniformity for qualification of a plasma chamber |
| SG2011085115A SG176564A1 (en) | 2009-06-30 | 2010-06-29 | Methods and apparatus for predictive preventive maintenance of processing chambers |
Family Applications After (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2011085172A SG176567A1 (en) | 2009-06-30 | 2010-06-29 | Arrangement for identifying uncontrolled events at the process module level and methods thereof |
| SG2011085107A SG176147A1 (en) | 2009-06-30 | 2010-06-29 | Methods and arrangements for in-situ process monitoring and control for plasma processing tools |
| SG2011085131A SG176565A1 (en) | 2009-06-30 | 2010-06-29 | Methods and apparatus to predict etch rate uniformity for qualification of a plasma chamber |
| SG2011085115A SG176564A1 (en) | 2009-06-30 | 2010-06-29 | Methods and apparatus for predictive preventive maintenance of processing chambers |
Country Status (6)
| Country | Link |
|---|---|
| JP (5) | JP2012532464A (ko) |
| KR (5) | KR101741271B1 (ko) |
| CN (5) | CN102473631B (ko) |
| SG (5) | SG176566A1 (ko) |
| TW (5) | TWI495970B (ko) |
| WO (5) | WO2011002804A2 (ko) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102332383B (zh) * | 2011-09-23 | 2014-12-10 | 中微半导体设备(上海)有限公司 | 等离子体刻蚀工艺的终点监控方法 |
| US10128090B2 (en) | 2012-02-22 | 2018-11-13 | Lam Research Corporation | RF impedance model based fault detection |
| US9502221B2 (en) | 2013-07-26 | 2016-11-22 | Lam Research Corporation | Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching |
| CN104730372B (zh) * | 2013-12-13 | 2018-08-10 | 朗姆研究公司 | 基于rf阻抗模型的故障检测 |
| US10192763B2 (en) * | 2015-10-05 | 2019-01-29 | Applied Materials, Inc. | Methodology for chamber performance matching for semiconductor equipment |
| US10269545B2 (en) * | 2016-08-03 | 2019-04-23 | Lam Research Corporation | Methods for monitoring plasma processing systems for advanced process and tool control |
| US9972478B2 (en) * | 2016-09-16 | 2018-05-15 | Lam Research Corporation | Method and process of implementing machine learning in complex multivariate wafer processing equipment |
| US11067515B2 (en) * | 2017-11-28 | 2021-07-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for inspecting a wafer process chamber |
| CN108847381A (zh) * | 2018-05-25 | 2018-11-20 | 深圳市华星光电半导体显示技术有限公司 | 测试基板及延长测试基板使用寿命的方法 |
| US10651097B2 (en) | 2018-08-30 | 2020-05-12 | Lam Research Corporation | Using identifiers to map edge ring part numbers onto slot numbers |
| DE102019209110A1 (de) * | 2019-06-24 | 2020-12-24 | Sms Group Gmbh | Industrielle Anlage, insbesondere Anlage der metallerzeugenden Industrie oder der Aluminium- oder Stahlindustrie und Verfahren zum Betreiben einer industriellen Anlage, insbesondere einer Anlage der metallerzeugenden Industrie oder der Aluminium- oder Stahlindustrie |
| WO2023286142A1 (ja) * | 2021-07-13 | 2023-01-19 | 株式会社日立ハイテク | 診断装置及び診断方法並びにプラズマ処理装置及び半導体装置製造システム |
| US20230195074A1 (en) * | 2021-12-21 | 2023-06-22 | Applied Materials, Inc. | Diagnostic methods for substrate manufacturing chambers using physics-based models |
| US20230260767A1 (en) * | 2022-02-15 | 2023-08-17 | Applied Materials, Inc. | Process control knob estimation |
Family Cites Families (59)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5272872A (en) * | 1992-11-25 | 1993-12-28 | Ford Motor Company | Method and apparatus of on-board catalytic converter efficiency monitoring |
| JP3301238B2 (ja) * | 1994-10-25 | 2002-07-15 | 三菱電機株式会社 | エッチング方法 |
| JPH08148474A (ja) * | 1994-11-16 | 1996-06-07 | Sony Corp | ドライエッチングの終点検出方法および装置 |
| JPH09306894A (ja) * | 1996-05-17 | 1997-11-28 | Sony Corp | 最適発光スペクトル自動検出システム |
| JP3630931B2 (ja) * | 1996-08-29 | 2005-03-23 | 富士通株式会社 | プラズマ処理装置、プロセスモニタ方法及び半導体装置の製造方法 |
| US6197116B1 (en) * | 1996-08-29 | 2001-03-06 | Fujitsu Limited | Plasma processing system |
| US5993615A (en) * | 1997-06-19 | 1999-11-30 | International Business Machines Corporation | Method and apparatus for detecting arcs |
| EP1025276A1 (en) * | 1997-09-17 | 2000-08-09 | Tokyo Electron Limited | Device and method for detecting and preventing arcing in rf plasma systems |
| US5986747A (en) | 1998-09-24 | 1999-11-16 | Applied Materials, Inc. | Apparatus and method for endpoint detection in non-ionizing gaseous reactor environments |
| US8617351B2 (en) * | 2002-07-09 | 2013-12-31 | Applied Materials, Inc. | Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction |
| JP2001338856A (ja) * | 2000-05-30 | 2001-12-07 | Tokyo Seimitsu Co Ltd | 半導体製造システムのプロセスコントローラ |
| JP4554037B2 (ja) * | 2000-07-04 | 2010-09-29 | 東京エレクトロン株式会社 | 消耗品の消耗度予測方法及び堆積膜厚の予測方法 |
| US6567718B1 (en) * | 2000-07-28 | 2003-05-20 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring consumable performance |
| US6391787B1 (en) * | 2000-10-13 | 2002-05-21 | Lam Research Corporation | Stepped upper electrode for plasma processing uniformity |
| US6821794B2 (en) | 2001-10-04 | 2004-11-23 | Novellus Systems, Inc. | Flexible snapshot in endpoint detection |
| JP2003151955A (ja) * | 2001-11-19 | 2003-05-23 | Nec Kansai Ltd | プラズマエッチング方法 |
| WO2003102724A2 (en) * | 2002-05-29 | 2003-12-11 | Tokyo Electron Limited | Method and system for data handling, storage and manipulation |
| US6825050B2 (en) * | 2002-06-07 | 2004-11-30 | Lam Research Corporation | Integrated stepwise statistical process control in a plasma processing system |
| US20040031052A1 (en) * | 2002-08-12 | 2004-02-12 | Liberate Technologies | Information platform |
| US6781383B2 (en) * | 2002-09-24 | 2004-08-24 | Scientific System Research Limited | Method for fault detection in a plasma process |
| AU2003270866A1 (en) * | 2002-09-30 | 2004-04-23 | Tokyo Electron Limited | Method and apparatus for the monitoring and control of a semiconductor manufacturing process |
| EP1556936B1 (en) * | 2002-10-25 | 2016-12-07 | S & C Electric Company | Method and apparatus for control of an electric power system in response to circuit abnormalities |
| JP4365109B2 (ja) * | 2003-01-29 | 2009-11-18 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US6969619B1 (en) * | 2003-02-18 | 2005-11-29 | Novellus Systems, Inc. | Full spectrum endpoint detection |
| JP2004295348A (ja) * | 2003-03-26 | 2004-10-21 | Mori Seiki Co Ltd | 工作機械の保守管理システム |
| US20060006139A1 (en) * | 2003-05-09 | 2006-01-12 | David Johnson | Selection of wavelengths for end point in a time division multiplexed process |
| ATE415702T1 (de) * | 2003-05-09 | 2008-12-15 | Unaxis Usa Inc | Endpunkt-erkennung in einem zeitlich gemultiplexten verfahren unter verwendung eines hüllkurvenalgorithmus |
| JP2004335841A (ja) * | 2003-05-09 | 2004-11-25 | Tokyo Electron Ltd | プラズマ処理装置の予測装置及び予測方法 |
| US7062411B2 (en) * | 2003-06-11 | 2006-06-13 | Scientific Systems Research Limited | Method for process control of semiconductor manufacturing equipment |
| JP4043408B2 (ja) * | 2003-06-16 | 2008-02-06 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| US6902646B2 (en) * | 2003-08-14 | 2005-06-07 | Advanced Energy Industries, Inc. | Sensor array for measuring plasma characteristics in plasma processing environments |
| KR100567745B1 (ko) * | 2003-09-25 | 2006-04-05 | 동부아남반도체 주식회사 | 스퍼터링용 타겟의 수명예측 장치 및 수명예측방법 |
| US8036869B2 (en) * | 2003-09-30 | 2011-10-11 | Tokyo Electron Limited | System and method for using first-principles simulation to control a semiconductor manufacturing process via a simulation result or a derived empirical model |
| US7930053B2 (en) * | 2003-12-23 | 2011-04-19 | Beacons Pharmaceuticals Pte Ltd | Virtual platform to facilitate automated production |
| US7233878B2 (en) * | 2004-01-30 | 2007-06-19 | Tokyo Electron Limited | Method and system for monitoring component consumption |
| US7146237B2 (en) * | 2004-04-07 | 2006-12-05 | Mks Instruments, Inc. | Controller and method to mediate data collection from smart sensors for fab applications |
| JP2006004992A (ja) * | 2004-06-15 | 2006-01-05 | Seiko Epson Corp | 研磨装置管理システム、管理装置、管理装置制御プログラム及び管理装置制御方法 |
| TWI336823B (en) * | 2004-07-10 | 2011-02-01 | Onwafer Technologies Inc | Methods of and apparatuses for maintenance, diagnosis, and optimization of processes |
| US7292045B2 (en) * | 2004-09-04 | 2007-11-06 | Applied Materials, Inc. | Detection and suppression of electrical arcing |
| JP4972277B2 (ja) * | 2004-11-10 | 2012-07-11 | 東京エレクトロン株式会社 | 基板処理装置の復帰方法、該装置の復帰プログラム、及び基板処理装置 |
| US7828929B2 (en) * | 2004-12-30 | 2010-11-09 | Research Electro-Optics, Inc. | Methods and devices for monitoring and controlling thin film processing |
| JP4707421B2 (ja) * | 2005-03-14 | 2011-06-22 | 東京エレクトロン株式会社 | 処理装置，処理装置の消耗部品管理方法，処理システム，処理システムの消耗部品管理方法 |
| JP2006328510A (ja) * | 2005-05-30 | 2006-12-07 | Ulvac Japan Ltd | プラズマ処理方法及び装置 |
| TWI338321B (en) * | 2005-06-16 | 2011-03-01 | Unaxis Usa Inc | Process change detection through the use of evolutionary algorithms |
| US7409260B2 (en) * | 2005-08-22 | 2008-08-05 | Applied Materials, Inc. | Substrate thickness measuring during polishing |
| US7302363B2 (en) * | 2006-03-31 | 2007-11-27 | Tokyo Electron Limited | Monitoring a system during low-pressure processes |
| US7413672B1 (en) * | 2006-04-04 | 2008-08-19 | Lam Research Corporation | Controlling plasma processing using parameters derived through the use of a planar ion flux probing arrangement |
| US7829468B2 (en) * | 2006-06-07 | 2010-11-09 | Lam Research Corporation | Method and apparatus to detect fault conditions of plasma processing reactor |
| KR20080006750A (ko) * | 2006-07-13 | 2008-01-17 | 삼성전자주식회사 | 반도체소자 제조용 플라즈마 도핑 시스템 |
| US20080063810A1 (en) * | 2006-08-23 | 2008-03-13 | Applied Materials, Inc. | In-situ process state monitoring of chamber |
| CN100587902C (zh) * | 2006-09-15 | 2010-02-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 在线预测刻蚀设备维护的方法 |
| JP2008158769A (ja) * | 2006-12-22 | 2008-07-10 | Tokyo Electron Ltd | 基板処理システム、制御装置、設定情報監視方法および設定情報監視プログラムを記憶した記憶媒体 |
| US7548830B2 (en) * | 2007-02-23 | 2009-06-16 | General Electric Company | System and method for equipment remaining life estimation |
| US7674636B2 (en) * | 2007-03-12 | 2010-03-09 | Tokyo Electron Limited | Dynamic temperature backside gas control for improved within-substrate process uniformity |
| US8055203B2 (en) * | 2007-03-14 | 2011-11-08 | Mks Instruments, Inc. | Multipoint voltage and current probe system |
| JP2008311338A (ja) * | 2007-06-13 | 2008-12-25 | Harada Sangyo Kk | 真空処理装置及びこれに用いる異常放電予知装置、並びに、真空処理装置の制御方法 |
| KR100892248B1 (ko) * | 2007-07-24 | 2009-04-09 | 주식회사 디엠에스 | 플라즈마 반응기의 실시간 제어를 실현하는 종말점 검출장치 및 이를 포함하는 플라즈마 반응기 및 그 종말점 검출방법 |
| US20090106290A1 (en) * | 2007-10-17 | 2009-04-23 | Rivard James P | Method of analyzing manufacturing process data |
| JP4983575B2 (ja) * | 2007-11-30 | 2012-07-25 | パナソニック株式会社 | プラズマ処理装置およびプラズマ処理方法 |
-
2010
- 2010-06-29 WO PCT/US2010/040468 patent/WO2011002804A2/en active Application Filing
- 2010-06-29 KR KR1020117031561A patent/KR101741271B1/ko active IP Right Grant
- 2010-06-29 SG SG2011085149A patent/SG176566A1/en unknown
- 2010-06-29 CN CN201080029444.8A patent/CN102473631B/zh active Active
- 2010-06-29 JP JP2012518589A patent/JP2012532464A/ja active Pending
- 2010-06-29 WO PCT/US2010/040477 patent/WO2011002810A2/en active Application Filing
- 2010-06-29 KR KR1020117031574A patent/KR101741272B1/ko active IP Right Grant
- 2010-06-29 WO PCT/US2010/040456 patent/WO2011002800A2/en active Application Filing
- 2010-06-29 JP JP2012518586A patent/JP5629770B2/ja active Active
- 2010-06-29 CN CN201080028990.XA patent/CN102804929B/zh active Active
- 2010-06-29 JP JP2012518588A patent/JP5693573B2/ja active Active
- 2010-06-29 WO PCT/US2010/040465 patent/WO2011002803A2/en active Application Filing
- 2010-06-29 SG SG2011085172A patent/SG176567A1/en unknown
- 2010-06-29 KR KR1020117031592A patent/KR101741274B1/ko active IP Right Grant
- 2010-06-29 CN CN201080029024.XA patent/CN102473590B/zh active Active
- 2010-06-29 CN CN201080027296.6A patent/CN102804353B/zh active Active
- 2010-06-29 JP JP2012518584A patent/JP5599882B2/ja active Active
- 2010-06-29 SG SG2011085107A patent/SG176147A1/en unknown
- 2010-06-29 CN CN201080029270.5A patent/CN102474968B/zh active Active
- 2010-06-29 WO PCT/US2010/040478 patent/WO2011002811A2/en active Application Filing
- 2010-06-29 KR KR1020117031499A patent/KR101708077B1/ko active IP Right Grant
- 2010-06-29 SG SG2011085131A patent/SG176565A1/en unknown
- 2010-06-29 SG SG2011085115A patent/SG176564A1/en unknown
- 2010-06-29 KR KR1020117031573A patent/KR101708078B1/ko active IP Right Grant
- 2010-06-29 JP JP2012518582A patent/JP5624618B2/ja active Active
- 2010-06-30 TW TW099121513A patent/TWI495970B/zh active
- 2010-06-30 TW TW099121516A patent/TWI509375B/zh active
- 2010-06-30 TW TW099121511A patent/TWI480917B/zh active
- 2010-06-30 TW TW099121515A patent/TWI484435B/zh active
- 2010-06-30 TW TW099121519A patent/TWI536193B/zh active
Also Published As
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SG176566A1 (en) | Methods for constructing an optimal endpoint algorithm | |
| US8538572B2 (en) | Methods for constructing an optimal endpoint algorithm | |
| CN107408522B (zh) | 使用高维变量选择模型确定关键参数 | |
| CN112884193A (zh) | 预测装置、预测方法及记录介质 | |
| JP2015503763A5 (ko) | ||
| CN109116243B (zh) | 一种动力电池的异常检测方法和装置 | |
| US9696717B2 (en) | Apparatus and method of segmenting sensor data output from a semiconductor manufacturing facility | |
| CN109857528A (zh) | 数据迁移的速度调整方法、装置、存储介质和移动终端 | |
| CN107992840A (zh) | 多分段多阈值约束的时间序列模式查找方法和系统 | |
| JP3823804B2 (ja) | 信号処理方法及び装置、信号処理プログラム、並びに記録媒体 | |
| CN110008049A (zh) | 一种基于互联网平台的数据修正方法、终端设备及介质 | |
| JP2008250910A (ja) | データマイニング方法及び工程管理方法 | |
| KR20210029595A (ko) | 키워드 스폿팅 장치, 방법 및 컴퓨터 판독 가능한 기록매체 | |
| JP5207695B2 (ja) | 工程管理方法およびその方法を利用したシステム | |
| US20210140925A1 (en) | Automated resonance test on multicomponent components by means of pattern recognition | |
| CN107808830B (zh) | 一种多光刻层电性参数相关性分析系统和分析方法 | |
| Bergmann | Data Mining for Manufacturing: Preventive Maintenance, Failure prediction, Quality Control | |
| TWI751540B (zh) | 資料處理裝置、方法、及半導體製造裝置 | |
| TW201833535A (zh) | 用於調諧經調變晶圓之敏感度及判定用於經調變晶圓之處理視窗之系統，方法以及非暫時性電腦可讀媒體 | |
| CN109711036B (zh) | 飞行控制系统试验结果的评估方法 | |
| CN114385294A (zh) | 一种交互式陷印方法及系统 | |
| CN116048864A (zh) | 一种服务器异常检测处理方法及装置 | |
| CN114324187A (zh) | 监测刻蚀腔体颗粒的方法、装置、服务器及可读存储介质 | |
| KR20120134298A (ko) | 헬리콥터 비행시험 데이터 처리 방법 및 컴퓨터 판독 가능한 기록매체 | |
| JP2023517873A (ja) | 寿命初期故障を起こしやすいダイの予測 |