TW201129936A - Methods and apparatus to predict etch rate uniformity for qualification of a plasma chamber - Google Patents

Methods and apparatus to predict etch rate uniformity for qualification of a plasma chamber

Info

Publication number
TW201129936A
TW201129936A TW099121515A TW99121515A TW201129936A TW 201129936 A TW201129936 A TW 201129936A TW 099121515 A TW099121515 A TW 099121515A TW 99121515 A TW99121515 A TW 99121515A TW 201129936 A TW201129936 A TW 201129936A
Authority
TW
Taiwan
Prior art keywords
data
processing
etch rate
predictive model
health check
Prior art date
Application number
TW099121515A
Other languages
Chinese (zh)
Other versions
TWI484435B (en
Inventor
Brian D Choi
Gun-Su Yun
Vijayakumar C Venugopal
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of TW201129936A publication Critical patent/TW201129936A/en
Application granted granted Critical
Publication of TWI484435B publication Critical patent/TWI484435B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Abstract

A method for predicting etch rate uniformity for qualifying health status of a processing chamber during substrate processing of substrates is provided. The method includes executing a recipe and receiving processing data from a first set of sensors. The method further includes analyzing the processing data utilizing a subsystem health check predictive model to determine calculated data, which includes at least one of etch rate data and uniformity data. The subsystem health check predictive model is constructed by correlating measurement data from a set of film substrates with processing data collected during analogous processing of a set of non-film substrates. The method yet also includes performing a comparison of the calculated data against a set of control limits as defined by the subsystem health check predictive model. The method yet further includes generating a warning if the calculated data is outside of the set of control limits.
TW099121515A 2009-06-30 2010-06-30 Methods and apparatus to predict etch rate uniformity for qualification of a plasma chamber TWI484435B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US22210209P 2009-06-30 2009-06-30
US22202409P 2009-06-30 2009-06-30

Publications (2)

Publication Number Publication Date
TW201129936A true TW201129936A (en) 2011-09-01
TWI484435B TWI484435B (en) 2015-05-11

Family

ID=43411705

Family Applications (5)

Application Number Title Priority Date Filing Date
TW099121513A TWI495970B (en) 2009-06-30 2010-06-30 Method and arrangement for detecting in-situ fast transient event
TW099121516A TWI509375B (en) 2009-06-30 2010-06-30 Methods and arrangements for implementing automatic in-situ process control scheme during execution of recipe
TW099121515A TWI484435B (en) 2009-06-30 2010-06-30 Methods and apparatus to predict etch rate uniformity for qualification of a plasma chamber
TW099121511A TWI480917B (en) 2009-06-30 2010-06-30 Methods for constructing an optimal endpoint algorithm
TW099121519A TWI536193B (en) 2009-06-30 2010-06-30 Methods and apparatus for predictive preventive maintenance of processing chambers

Family Applications Before (2)

Application Number Title Priority Date Filing Date
TW099121513A TWI495970B (en) 2009-06-30 2010-06-30 Method and arrangement for detecting in-situ fast transient event
TW099121516A TWI509375B (en) 2009-06-30 2010-06-30 Methods and arrangements for implementing automatic in-situ process control scheme during execution of recipe

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW099121511A TWI480917B (en) 2009-06-30 2010-06-30 Methods for constructing an optimal endpoint algorithm
TW099121519A TWI536193B (en) 2009-06-30 2010-06-30 Methods and apparatus for predictive preventive maintenance of processing chambers

Country Status (6)

Country Link
JP (5) JP5693573B2 (en)
KR (5) KR101741272B1 (en)
CN (5) CN102474968B (en)
SG (5) SG176565A1 (en)
TW (5) TWI495970B (en)
WO (5) WO2011002804A2 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI623035B (en) * 2013-07-26 2018-05-01 蘭姆研究公司 Etch rate modeling and use thereof for in-chamber and chamber-to-chamber matching
TWI654681B (en) 2013-07-26 2019-03-21 美商蘭姆研究公司 Etch rate modeling and use thereof for in-chamber and chamber-to-chamber matching

Also Published As

Publication number Publication date
JP2012532464A (en) 2012-12-13
CN102473590A (en) 2012-05-23
SG176147A1 (en) 2011-12-29
WO2011002810A3 (en) 2011-04-14
CN102804353B (en) 2015-04-15
JP5693573B2 (en) 2015-04-01
KR20120037420A (en) 2012-04-19
WO2011002811A3 (en) 2011-02-24
CN102804929B (en) 2015-11-25
KR101741272B1 (en) 2017-05-29
CN102473590B (en) 2014-11-26
WO2011002800A3 (en) 2011-04-07
JP2012532461A (en) 2012-12-13
KR20120047871A (en) 2012-05-14
TW201115288A (en) 2011-05-01
KR101708078B1 (en) 2017-02-17
JP2012532462A (en) 2012-12-13
SG176564A1 (en) 2012-01-30
JP2012532460A (en) 2012-12-13
TWI480917B (en) 2015-04-11
KR20120101293A (en) 2012-09-13
CN102473631A (en) 2012-05-23
JP5599882B2 (en) 2014-10-01
WO2011002810A4 (en) 2011-06-03
TWI509375B (en) 2015-11-21
CN102473631B (en) 2014-11-26
SG176567A1 (en) 2012-01-30
TWI484435B (en) 2015-05-11
TW201129884A (en) 2011-09-01
KR20120037421A (en) 2012-04-19
WO2011002803A3 (en) 2011-03-03
WO2011002803A2 (en) 2011-01-06
JP5629770B2 (en) 2014-11-26
KR101741274B1 (en) 2017-05-29
WO2011002804A3 (en) 2011-03-03
KR20120037419A (en) 2012-04-19
JP2012532463A (en) 2012-12-13
CN102474968B (en) 2015-09-02
CN102804353A (en) 2012-11-28
WO2011002800A2 (en) 2011-01-06
WO2011002804A2 (en) 2011-01-06
WO2011002810A2 (en) 2011-01-06
TW201108022A (en) 2011-03-01
TWI495970B (en) 2015-08-11
KR101708077B1 (en) 2017-02-17
CN102804929A (en) 2012-11-28
WO2011002811A2 (en) 2011-01-06
JP5624618B2 (en) 2014-11-12
TW201112302A (en) 2011-04-01
SG176566A1 (en) 2012-01-30
SG176565A1 (en) 2012-01-30
CN102474968A (en) 2012-05-23
TWI536193B (en) 2016-06-01
KR101741271B1 (en) 2017-05-29

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