CN108847381A - The method for testing substrate and extended testing system substrate service life - Google Patents
The method for testing substrate and extended testing system substrate service life Download PDFInfo
- Publication number
- CN108847381A CN108847381A CN201810545832.XA CN201810545832A CN108847381A CN 108847381 A CN108847381 A CN 108847381A CN 201810545832 A CN201810545832 A CN 201810545832A CN 108847381 A CN108847381 A CN 108847381A
- Authority
- CN
- China
- Prior art keywords
- etch layer
- etching
- substrate
- dry etching
- glass baseplate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/3288—Maintenance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Abstract
The present invention provides a kind of test substrate, and for being performed etching simulation in dry etching processing procedure, test substrate includes：Glass substrate, and it is prepared in the etch layer of glass baseplate surface, etch layer stops etching power to act on glass baseplate surface for being etched to form pattern by dry etching equipment；It has the beneficial effect that：Test substrate provided by the invention prepares etch layer in substrate surface, to form pattern for being etched by dry etching equipment, and etching power is stopped to act on substrate surface, and protective substrate surface is not atomized, and then extends substrate service life.
Description
Technical field
The present invention relates to display panel manufacturing fields more particularly to a kind of test substrate and extended testing system substrate dry
The method for etching the service life in processing procedure.
Background technique
Dry etch process can be divided into physical etching and chemically etch two ways.Physical etching is to utilize aura
Gas (such as argon) is ionized into positively charged ion by electric discharge, is recycled bias by ion acceleration, is splashed on the surface for being etched object
And hit the atom for the object that is etched, which is entirely energy transfer physically, therefore referred to as physical etching.Chemically carve
Erosion or be plasma etching, is that etching gas is ionized to and formed charged ion, molecule and reactivity using plasma
Very strong atomic group, they are diffused into be etched film surface after reacted with the surface atom for the film that is etched generation have volatilization
The reaction product of property, and reaction chamber is detached by vacuum equipment.Because this fully reacting is using chemical reaction, therefore it is known as chemically carving
Erosion.Most widely used method is the reactive ion etching in conjunction with physical ion bombardment and chemical reaction.
Dry etching board equipment needs to confirm chamber with Dummy (virtual) substrate before answering a pager's call and newly recipe (program) is imported
Room state, Dummy substrate is the element glass substrate that any film layer is not plated on surface, and under the action of plasma, Dummy substrate is used
Rear surface can generate atomizating phenomenon several times, and when Dummy substrate surface generates atomization, the sensor sensing in equipment is less than Dummy
Substrate and cause manipulator to take less than substrate, cause the substrate that can not reuse, cause to waste.
In conclusion Dummy substrate used in the dry etching processing procedure of the prior art, is used for multiple times rear surface and is atomized and nothing
Method continues to use, to result in waste of resources.
Summary of the invention
The present invention provides a kind of test substrate, and surface is prepared with the film layer for stopping etching, to stop etching power to act on base
Plate surface causes substrate surface to be atomized, to solve Dummy substrate used in the dry etching processing procedure of the prior art, after being used for multiple times
Surface atomizing and can not continue to use, thus the technical issues of resulting in waste of resources.
To solve the above problems, technical solution provided by the invention is as follows：
The present invention provides a kind of test substrate, and for being modeled etching in dry etching processing procedure, the test substrate includes：
Glass substrate；And
Etch layer is prepared in the glass baseplate surface, to form pattern for being etched by dry etching equipment, and stops etching power
Act on the glass baseplate surface.
According to one preferred embodiment of the present invention, the etch layer is prepared using photoresist.
According to one preferred embodiment of the present invention, the thicknesses of layers of the etch layer is at least
According to one preferred embodiment of the present invention, the thicknesses of layers of the etch layer is
To solve the above problems, the present invention also provides a kind of sides of extended testing system substrate service life in dry etching processing procedure
Method, the method are：Before being performed etching to test with glass baseplate surface using dry etching apparatus, in the glass substrate
Surface prepares an etch layer；
Wherein, the etch layer by dry etching equipment for being etched to form pattern, and etching power is stopped to act on the glass
Substrate surface.
According to one preferred embodiment of the present invention, the dry etching apparatus is reduced and is carved when performing etching to the etch layer
Gas content is lost, and/or uses the etching gas small to the etch layer damage strength instead.
According to one preferred embodiment of the present invention, the etch layer is prepared using photoresist, wherein prepares the etch layer
Method include：
S10, in the glass baseplate surface coating photoresist；
S20 toasts the photoresist to be formed by curing the etch layer.
According to one preferred embodiment of the present invention, the thicknesses of layers of the etch layer is at least
According to one preferred embodiment of the present invention, when the etch layer is less than after multiple etching to thicknesses of layers
When, the etch layer is completely removed, and prepare the etch layer again in the glass baseplate surface.
According to one preferred embodiment of the present invention, the etch layer after solidification with a thickness of
Beneficial effects of the present invention are：Compared with prior art, test substrate provided by the invention is prepared in substrate surface
Etch layer to form pattern for being etched by dry etching equipment, and etching power is stopped to act on substrate surface, protective substrate surface not by
Atomization, and then extend substrate service life.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of invention
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is test schematic diagram of substrate structure provided by the invention.
Specific embodiment
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the present invention
Example.The direction term that the present invention is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side]
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the present invention, rather than to
The limitation present invention.The similar unit of structure is with being given the same reference numerals in the figure.
The present invention for baseplate is surveyed in the dry etching processing procedure of the prior art, rear surface atomization is used for multiple times and can not be after
Continuous to use, thus the technical issues of resulting in waste of resources, the present embodiment is able to solve the defect.
As shown in Figure 1, the present invention provides a kind of test substrate, etching apparatus is being answered a pager's call or new etch application imports it
Afterwards, it needing to perform etching test using the test substrate, the pattern formed later to the test substrate surface detects,
After etching pattern is up to standard, it can just be prepared using the substrate after plated film.
After the etching of the test substrate Jing Guo thousands of times, surface because etching injury leads to atomizating phenomenon,
It can be etched to form the film layer of pattern in test substrate surface setting, and the film layer can stop to be divided in etching gas
From atom bombardment to substrate surface is tested, be atomized to avoid the test substrate surface.
For example, the test substrate includes glass substrate, and it is prepared in the etch layer of the glass baseplate surface.
The etch layer can be used photoresist preparation, using photoresist prepare the etch layer, convenient for formed compared with
Big film thickness, and facilitate removal, after the film thickness of the etch layer is etched to lower than certain thickness, continuing to use possibly can not
The glass baseplate surface is protected again, at this point, cleaning equipment can be used to wash the etch layer of the glass baseplate surface
Only, the etch layer of the glass substrate can be protected by then preparing thickness in the glass baseplate surface again, so be followed
Ring can extend the service life of the glass substrate.
The least layer thickness of the etch layer is set asIt, may lower than the etch layer of the thicknesses of layers
It can be penetrated by gas ions, it is impaired in turn result in the glass substrate；For example, setting the thicknesses of layers of the etch layer toPreferably, the thicknesses of layers of the etch layer is set asThicker institute is set
Etch layer is stated, with the glass substrate that adequately protects, meanwhile, extend the time that the etch layer is etched to thickness limit, keeps away
Exempt from the etch layer to be replaced frequently.
In array substrate processing procedure etching technics, by material point, nonmetallic and metal etch can be divided mainly into.Nonmetallic quarter
Erosion has Si (silicon) class etching, and etching gas is available SF6(sulfur hexafluoride gas) and CFx (polymer gas) system, one
As LCD (liquid crystal display panel) processing procedure select SF6 because F (fluorine) free radical of its dissociation is more, reaction rate is very fast, and
Processing procedure is more clean；CFx system generates due to during the reaction, being easy CH (hydrocarbon) compound, less to be selected, but CFx
System can be passed through O2(oxygen), by changing the combination of F/C (fluorine/carbon) ratio and O and C, reduce CFx and F in conjunction with increasing F
Free radical accelerates etch rate, and the selection ratio of adjustable Si/Oxide (oxide), processing procedure control it is elastic compared with SF6It wants
It is high.Metal etch then based on Al (aluminium) etching, generally uses Cl2(chlorine) is used as etching gas, can be obtained isotropic
Chemically etching effect.
When performing etching using CFx system gas to target layer, the O of certain content is passed through in CFx system gas2, mesh can be made
The rate increase that is etched of mark film layer, in embodiments of the present invention, simple CFx system gas can be used to carve the etch layer
Erosion, or reduce the O being passed through in CFx system gas2Content, to reduce the etch rate to the etch layer.
In deep dry etch process, the factor for influencing etch rate further includes：To RF power, operation pressure and gas flow
Control；RF (radio frequency) power refers to the power that RF inputs plasma in process cavity；Operation pressure refers to process cavity
Intracorporal pressure control, pressure is smaller, and the density of gas molecule is smaller, and the physical etchings of plasma are stronger, otherwise more
It is weak；In process cavity, gas flow is bigger, it is meant that the etching agent that etching is participated within the unit time is more, then etching
Rate is bigger.
Therefore, in combination with to the control to RF power, operation pressure and gas flow, reduce etching apparatus to the quarter
The etch rate for losing layer, the thickness for slowing down the etch layer cut down speed, reduce the etch layer of the glass baseplate surface
Replacement frequency.
To solve the above problems, the present invention also provides a kind of sides of extended testing system substrate service life in dry etching processing procedure
Method, the method are：Before being performed etching to test with glass baseplate surface using dry etching apparatus, in the glass substrate
Surface prepares an etch layer；Wherein, the etch layer by dry etching equipment for being etched to form pattern, and etching power is stopped to act on
The glass baseplate surface.
For example, the dry etching apparatus reduces etching gas content when performing etching to the etch layer, and/or change
With the etching gas small to the etch layer damage strength；To reduce etching apparatus to the etch rate of the etch layer, slow down
The thickness of the etch layer cuts down speed, reduces the replacement frequency of the etch layer of the glass baseplate surface
For example, the etch layer is prepared using photoresist, wherein the method for preparing the etch layer includes：
S10, in the glass baseplate surface coating photoresist.
S20 toasts the photoresist to be formed by curing the etch layer.
For example, the thicknesses of layers of the etch layer is at leastWhen the etch layer after multiple etching to film
Thickness degree is less thanWhen, the etch layer is completely removed, and prepare the quarter again in the glass baseplate surface
Lose layer.
Preferably, the etch layer after solidification with a thickness ofPreferably, the etching
The thicknesses of layers of layer is set asThe thicker etch layer is set, with the glass substrate that adequately protects, meanwhile,
Extend the time that the etch layer is etched to thickness limit, the etch layer is avoided to be replaced frequently.
Meanwhile the test substrate of atomization surface is generated for being etched in the prior art, and implement in the present invention
In example, due to the etch layer thinner thickness, lead to etch layer described in the ion penetration of etching gas, and then surface is made to cause to damage
The glass substrate of wound can be repaired using polishing process；For example, using CMP process to described impaired
Glass substrate repaired, react first with the chemical substance in polishing fluid with substrate surface, then pass through abrasive grain
The film that ablation removal reaction generates, and aforementioned process is constantly repeated, the undamaged smooth surface of high-precision is obtained, in turn
Eliminate substrate atomizating phenomenon, repairing substrate damage.The test substrate of the prior art after reparation, is formed on its surface photoresist layer,
It may continue as etching and survey baseplate.
Beneficial effects of the present invention are：Compared with prior art, test substrate provided by the invention is prepared in substrate surface
Etch layer to form pattern for being etched by dry etching equipment, and etching power is stopped to act on substrate surface, protective substrate surface not by
Atomization, and then extend substrate service life.
In conclusion although the present invention has been disclosed above in the preferred embodiment, but above preferred embodiment is not to limit
The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention subjects to the scope of the claims.
Claims (10)
1. a kind of test substrate, for being performed etching simulation in dry etching processing procedure, which is characterized in that the test substrate packet
It includes：
Glass substrate；And
Etch layer is prepared in the glass baseplate surface, to form pattern for being etched by dry etching equipment, and stops etching power effect
In the glass baseplate surface.
2. test substrate according to claim 1, which is characterized in that the etch layer is prepared using photoresist.
3. test substrate according to claim 2, which is characterized in that the thicknesses of layers of the etch layer is at least
4. test substrate according to claim 3, which is characterized in that the thicknesses of layers of the etch layer is
5. the method for extended testing system substrate service life in dry etching processing procedure, which is characterized in that the method is：Using dry etching
Before erosion equipment performs etching test with glass baseplate surface, an etch layer is prepared in the glass baseplate surface；
Wherein, the etch layer by dry etching equipment for being etched to form pattern, and etching power is stopped to act on the glass substrate
Surface.
6. according to the method described in claim 5, it is characterized in that, the dry etching apparatus is performed etching to the etch layer
When, etching gas content is reduced, and/or use the etching gas small to the etch layer damage strength instead.
7. according to the method described in claim 6, it is characterized in that, the etch layer is prepared using photoresist, wherein preparation
The method of the etch layer includes：
S10, in the glass baseplate surface coating photoresist；
S20 toasts the photoresist to be formed by curing the etch layer.
8. the method according to the description of claim 7 is characterized in that the thicknesses of layers of the etch layer is at least
9. according to the method described in claim 8, it is characterized in that, when the etch layer is small to thicknesses of layers after multiple etching
InWhen, the etch layer is completely removed, and prepare the etch layer again in the glass baseplate surface.
10. according to the method described in claim 8, it is characterized in that, the etch layer after solidifying with a thickness of
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810545832.XA CN108847381A (en) | 2018-05-25 | 2018-05-25 | The method for testing substrate and extended testing system substrate service life |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810545832.XA CN108847381A (en) | 2018-05-25 | 2018-05-25 | The method for testing substrate and extended testing system substrate service life |
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| Publication Number | Publication Date |
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| CN108847381A true CN108847381A (en) | 2018-11-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810545832.XA Pending CN108847381A (en) | 2018-05-25 | 2018-05-25 | The method for testing substrate and extended testing system substrate service life |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108987349A (en) * | 2018-07-25 | 2018-12-11 | 信利（惠州）智能显示有限公司 | Pass plate base guard method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1674225A (en) * | 2004-03-23 | 2005-09-28 | 松下电器产业株式会社 | Dummy substrate and substrate processing method using the same |
| CN102474968A (en) * | 2009-06-30 | 2012-05-23 | 朗姆研究公司 | Methods and arrangements for in-situ process monitoring and control for plasma processing tools |
| JP2016204735A (en) * | 2015-04-28 | 2016-12-08 | イビデン株式会社 | Ceramic structure and method for manufacturing ceramic structure |
-
2018
- 2018-05-25 CN CN201810545832.XA patent/CN108847381A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1674225A (en) * | 2004-03-23 | 2005-09-28 | 松下电器产业株式会社 | Dummy substrate and substrate processing method using the same |
| CN102474968A (en) * | 2009-06-30 | 2012-05-23 | 朗姆研究公司 | Methods and arrangements for in-situ process monitoring and control for plasma processing tools |
| JP2016204735A (en) * | 2015-04-28 | 2016-12-08 | イビデン株式会社 | Ceramic structure and method for manufacturing ceramic structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108987349A (en) * | 2018-07-25 | 2018-12-11 | 信利（惠州）智能显示有限公司 | Pass plate base guard method |
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Application publication date: 20181120 |